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Part : 2N3020 Supplier : New Jersey Semiconductor Manufacturer : Bristol Electronics Stock : 12,113 Best Price : $0.8168 Price Each : $2.4750
Part : 2N3020 Supplier : Central Semiconductor Manufacturer : Chip1Stop Stock : 449 Best Price : $1.84 Price Each : $2.23
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2N3020 Datasheet

Part Manufacturer Description PDF Type
2N3020 Central Semiconductor NPN SILICON TRANSISTOR Original
2N3020 Continental Device India NPN SILICON PLANAR EPITAXIAL TRANSISTORS Original
2N3020 Semelab Bipolar NPN Device in a Hermetically Sealed TO39 Metal Package - Pol=NPN / Pkg=TO39 / Vceo=80 / Ic=1 / Hfe=30min / fT(Hz)=80M / Pwr(W)=0.8 Original
2N3020 Advanced Semiconductor Silicon Transistor Selection Guide Scan
2N3020 Boca Semiconductor GENERAL TRANSISTOR NPN SILICON - Pol=NPN / Pkg=TO39 / Vceo=80 / Ic=1 / Hfe=30min / fT(Hz)=80M / Pwr(W)=0.8 Scan
2N3020 Central Semiconductor NPN METAL CAN - SWITCHING AND GENERAL PURPOSE Scan
2N3020 Central Semiconductor BJT, NPN, High Current Transistor, IC 1A - Pol=NPN / Pkg=TO39 / Vceo=80 / Ic=1 / Hfe=30min / fT(Hz)=80M / Pwr(W)=0.8 Scan
2N3020 Continental Device India Semiconductor Device Data Book 1996 Scan
2N3020 Crimson Semiconductor Transistor Selection Guide Scan
2N3020 Diode Transistor SMALL SIGNAL TRANSISTORS Scan
2N3020 Fairchild Semiconductor NPN small signal general purpose amplifier. - Pol=NPN / Pkg=TO39 / Vceo=80 / Ic=1 / Hfe=30min / fT(Hz)=80M / Pwr(W)=0.8 Scan
2N3020 Fairchild Semiconductor Full Line Condensed Catalogue 1977 Scan
2N3020 General Diode Transistor Selection Guide Scan
2N3020 General Transistor Small Signal Transistor Selection Guide Scan
2N3020 Great American Electronics Silicon NPN transistor Scan
2N3020 Micro Electronics NPN SILICON AF MEDIUM POWER AMPLIFIERS AND SWITCHES - Pol=NPN / Pkg=TO39 / Vceo=80 / Ic=1 / Hfe=30min / fT(Hz)=80M / Pwr(W)=0.8 Scan
2N3020 Micro Electronics Semiconductor Devices Scan
2N3020 Micro Electronics Semiconductor Device Data Book Scan
2N3020 Motorola Motorola Semiconductor Datasheet Library Scan
2N3020 Mullard Quick Reference Guide 1977/78 Scan
Showing first 20 results.

2N3020

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: NPN 2N3019 ­ 2N3020 SILICON PLANAR EPITAXIAL TRANSISTORS The 2N3019 and 2N3020 are NPN , Value 2N3019 2N3020 2N3019 2N3020 2N3019 2N3020 2N3019 2N3020 2N3019 2N3020 2N3019 2N3020 2N3019 2N3020 2N3019 2N3020 Unit 80 V 140 V 7 V 1 A 0.8 Watts 5 200 , Value 2N3019 2N3020 2N3019 2N3020 Unit 35 °C/W 219 °C/W 1/3 NPN 2N3019 ­ 2N3020 ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise noted Symbol Ratings Test Condition Comset Semiconductors
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2n3019 equivalent 2N3019 and applications 2n3019 transistor 2n30201
Abstract: Certified Manufacturer NPN SILICON PLANAR EPITAXIAL TRANSISTORS 2N3019 2N3020 TO-39 Metal Can , Data Sheet Page 1 of 4 NPN SILICON PLANAR EPITAXIAL TRANSISTORS 2N3019 2N3020 TO-39 Metal , 120 50 30 hFE* MAX 50 30 2N3019 2N3020 MIN UNITS 100 IC=10mA,VCE=10V 2N3019 2N3020 hFE* IC=150mA,VCE=10V 2N3019 2N3020 hFE* IC=500mA,VCE=10V 2N3019 2N3020 hFE* IC=1A,VCE=10V 15 15 2N3019 2N3020 hFE* IC=150mA,VCE=10V Tc= -55ºC 2N3019 40 Continental Device India
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C-120 160102D
Abstract: Certified Manufacturer NPN SILICON PLANAR EPITAXIAL TRANSISTORS 2N3019 2N3020 TO-39 Metal Can , PLANAR EPITAXIAL TRANSISTORS 2N3019 2N3020 TO-39 Metal Can Package ELECTRICAL CHARACTERISTICS , 2N3020 MIN UNITS 100 IC=10mA,VCE=10V 2N3019 2N3020 IC=150mA,VCE=10V 2N3019 2N3020 IC=500mA,VCE=10V 2N3019 2N3020 IC=1A,VCE=10V 15 15 2N3019 2N3020 IC=150mA,VCE=10V Tc= -155ºC , =1KHz 80 30 2N3019 2N3020 fT transition Frequency 2N3019 2N3020 Output Capacitance Input Continental Device India
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2N3019 CDIL 2N3020 SPECIFICATIONS CDIL 2N3019 cdil 2n3019 equivalent 2N3439-40R
Abstract: v EBO 2N3019 2N3020 80 140 7.0 1.0 0.8 4.6 5.0 28.6 2N3700 80 140 7.0 1.0 0.5 2.85 1.8 10.6 U n it Vdc Vdc Vdc Ade W atts m W -£C W atts mW C C 2N3019* 2N3020 CASE 79-04, STYLE 1 TO-39 (TO-205AD) a , al Resistance, Junction to Case S ym bol RfcJA R«JC 2N3019 2N3020 217 35 2N3700 350 97 U n it T 'W JC , C urrent Gain {IC = 0.1 m Adc, V c e ~ 10 Vdc) hFE 2N3700, 2N3019 2N3020 2N3700, 2N3019 2N3020 2N3700, 2N3019 2N3020 -5 5 X K U 2N3700, 2N3019 2N3700, 2N3019 2N3020 A ll Types VCE(satl V(BR)CEO v -
OCR Scan
2N3019 MOTOROLA motorola 2N3019 2N370
Abstract: tio n Tem perature Range Sym bol v CEO V cB O Vebo 2N3019 2N3020 80 140 7.0 1.0 2N 3700 80 140 7.0 1.0 0.5 2.85 1.8 10.6 200 U n it Vdc Vdc Vdc Ade W atts m W /3 C W atts m W /X X 2N3019* 2N3020 CASE , 2N3700, 2N3019 2N3020 2N3700, 2N 3019 2N3020 2N3700, 2N3019 2N3020 -5 5 X K 1 J 2N3700, 2N3019 2N3700, 2N3019 2N3020 A ll Types v CE(sat) V{BR)CEO v (BR)CBO v (BR)EBO CBO Characteristic 80 140 7.0 - - , - 2N3020 2N3019, 2N3700 400 Motorola S m a ll-S ign a l Transistors, FETs and Diodes Device -
OCR Scan
Abstract: 2N3019 2N3020 NPN SILICON TRANSISTOR w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N3019, 2N3020 types are NPN silicon transistors designed for general purpose amplifier applications. MARKING: FULL PART NUMBER TO-39 CASE MAXIMUM RATINGS: (TA=25°C) Collector-Base , 2N3020 MIN MAX 10 10 10 140 80 7.0 0.2 0.5 1.1 30 100 40 120 40 120 30 100 15 100 12 60 400 - UNITS nA A nA V V V V V V MHz pF pF ps dB R1 (11-June 2012) 2N3019 2N3020 NPN SILICON TRANSISTOR Central Semiconductor
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power transistor 2n3020
Abstract: MAXIMUM RATINGS Rating Symbol 2N3019 2N3020 2N3700 Unit Collector-Emitter Voltage VcEO 80 80 Vdc , Characteristic Symbol 2N3019 2N3020 2N3700 Unit Thermal Resistance, Junction to Ambient R0JA 217 350 T/W Thermal Resistance, Junction to Case R0JC 35 97 "C/W 2N3019* 2N3020 CASE 79-04, STYLE 1 TO-39 (TO , CHARACTERISTICS DC Current Gain (IC = 0.1 mAdc, Vce = 10 Vdc) 2N3700, 2N3019 2N3020 hFE 50 30 100 â'" Uc = 10 mAdc, Vce = lOVdcKI) 2N3700, 2N3019 2N3020 90 40 120 (IC = 150 mAdc, Vce = 10 Vdc)(1) 2N3700, 2N3019 -
OCR Scan
2N3053 2N3053A motorola 2N3020 test 2N3700 2N3053 motorola 336 motorola
Abstract: PLANAR EPITAXIAL TRANSISTORS 2N3019 2N3020 TO-39 Metal Can Package Designed for use in General , PLANAR EPITAXIAL TRANSISTORS 2N3019 2N3020 TO-39 Metal Can Package ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise) DESCRIPTION SYMBOL hFE* DC Current Gain 2N3019 2N3020 2N3019 2N3020 2N3019 2N3020 2N3019 2N3020 2N3019 2N3020 TEST CONDITION IC=0.1mA,VCE=10V hFE , | Small Signal Current Gain IC=1mA, VCE=5V, f=1KHz 2N3019 2N3020 fT Transition Frequency IC Continental Device India
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ISO/TS16949
Abstract: Boca Semiconductor Corp. MAXIMUM RATINGS Rating Symbol 2N3019 2N3020 2N3700 Unit , -6510 +200 °c THERMAL CHARACTERISTICS Characteristic Symbol 2N3019 2N3020 2N3700 Unit , 35 97 °C/W 2N3019* 2N3020 CASE 79-04, STYLE 1 TO-39 (TO-205AD) 2 "1 2 Base â -à 2N3700 , DC Current Gain (ic = 0.1 mAdc, Vce = 10 Vdc) 2N3700, 2N3019 2N3020 h fe 50 30 100 â'" dC = 10 mAdc , 500 mAdc, Vce = lOVdcKD 2N3700, 2N3019 2N3020 50 30 100 (lc = 1.0 Adc, VCE = 10Vdc)(1) All Types -
OCR Scan
2N301 2N3700 MOTOROLA 2n3701 2N3019-2N3020
Abstract: N AMER PHILIPS/DISCRETE blE T> ^53131 A ÃÃEÃ133 577 iilMJUiy 2N3020 IAPX SILICON PLANAR EPITAXIAL TRANSISTORS « N-P-N transistors in TO-39 metal envelopes intended for use as amplifiers and in , ; VCE = 10 V hFE fT 2N3019 2N3020 > 100 40 < 300 120 > 100 80 MECHANICAL DATA Fig. 1 TO , 763 This Material Copyrighted By Its Respective Manufacturer N AMER PHILIPS/DISCRETE 2N3019 2N3020 , transistors J I 2NC3Uiy 2N3020 2N3019 2N3020 D.C. current gain * IC= 0,1 mA; Vqe = 10 V hFE > < 50 -
OCR Scan
Abstract: Datasheet Central Semiconductor Corp. 145 Adams Avenue, Hauppauge, NY 11788 USA Tel: (631) 435-1110 â'¢ Fax: (631) 435-1824 Manufacturers of World Class Discrete Semiconductors 2N3019 2N3020 NPN Silicon Transistor JEDEC TO-39 Case UtSCRIPI I UN The CENTRAL SEMICONDUCTOR 2N3019, 2N3020 are NPN , ELECTRICAL CHARACTERISTICS (TA=25°C) 2n3019 2N3019 2N3020 140 V 80 V 7 V 1A 0.8W 5.0W -65 to +200°C 2N3020 Symbo1 Test Conditions Min Max Min Max Unit ' cbo vcb=90v 10 10 nA icbo vcb=90v, TA -
OCR Scan
Abstract: SILICON PLANAR TRANSISTOR 2N3019 / 2N3020 TO-39 Metal Can Package General Transistor ABSOLUTE , 10 10 10 2N3020 30 - 100 40 - 120 40 - 120 30 - 100 >15 UNIT V V V nA ÂuA nA MAX , TRANSISTOR 2N3019 / 2N3020 TO-39 Metal Can Package ELECTRICAL CHARACTERISTICS (Ta=25ºC unless , =1KHz 2N3019 2N3020 IE=10mA, VCB=10V, f=79.8MHz IC=100ÂuA, VCE=10V, RS=1Kâ"¦, f=1.0KHz 2N3019 MIN 80 , 040406E Continental Device India Limited Data Sheet Page 2 of 4 2N3019 / 2N3020 TO-39 Metal Continental Device India
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Abstract: SILICON PLANAR TRANSISTOR 2N3019 / 2N3020 TO-39 Metal Can Package General Transistor ABSOLUTE , 10 2N3020 30 - 100 40 - 120 40 - 120 30 - 100 >15 UNIT V V V nA uA nA MAX UNIT , 2N3019 / 2N3020 TO-39 Metal Can Package ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified , CONDITION VCB=10V, IE=0, f=1MHz VEB=0.5V, IC=0, f=1MHz IC=1mA, VCE=5V, f=1KHz 2N3019 2N3020 IE , India Limited Data Sheet Page 2 of 4 2N3019 / 2N3020 TO-39 Metal Can Package TO-39 Metal Continental Device India
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Abstract: Z A 2N3019 2N3020 7 = 3 5 "-/< ? PHILIPS INTERNATIONAL 5bE D m 711GöSb DG42b4G 31e ] HPHIN SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N transistors in TO-39 metal envelopes intended fo , W W °C Ptot Ptot 0,8 5,0 200 2N3019 2N3020 40 120 80 100 300 100 h FE > < > h , 1990 763 2N3019 2N3020 PHILIPS INTERNATIONAL RATING S SbE D I 7110fl2b 00M2b41 20S T , DOMSbMS IMI HIPHIN 2N3019 A V 2N3020 30 100 40 120 40 120 30 100 15 80 12 60 400 30 200 - c hFE hFE hFE -
OCR Scan
2n3019a T--35-- 2N3Q20 711D0E
Abstract: r ! / 2N3019 2N3020 NPN SILICON AF MEDIUM POWER AMPLIFIERS & SWITCHES -A 1 S& THE 2N3019, 2N3020 ARE NPN SILICON PLANAR EPITAXIAL TRANSISTORS FOR AF MEDIUM POWER DRIVERS AND OUTPUTS, AS WELL AS FOR SWITCH­ ING APPLICATIONS UP TO 1 AMPERE. THEY ARE COMPLEMENTARY TO THE PNP 2N4033, 2N4031. C E B ABSOLUTE MAXIMUM RATINGS Collector-Base ¥©ltage VCBO I4OV , SYMBOL 2NJ019 2N3020 MIN MAX MIN MAX UNIT TEST CONDITIONS Collector-Base Breakdown Voltage -
OCR Scan
pnp for 2n3019 200OC BOX69477 150OC VCE-10V 8100B
Abstract: JL 2N3019 2N3020 PHILIPS INTERNATIONAL SbE T> I SILICON PLANAR EPITAXIAL TRANSISTORS 7110flSb D0L»2b40 37^ â  PHIN 7=35"- N-P-N transistors in TO-39 metal envelopes intended for use as , = 20 MHz Iq = 50 mA; VCE = 10 V 2N3019 2N3020 hFE > < 100 300 40 120 h > 100 80 MECHANICAL , 002-175 August 1990 763 This Material Copyrighted By Its Respective Manufacturer 2N3019 2N3020 , V; Rs = 1 kS2 711002b 00M2fci42 141 «PHIN 2N3019 2N3020 hFE > < 50 30 100 hFE > < 90 40 120 -
OCR Scan
2N302Q
Abstract: m 2N3020 \ \ SILICON NPN TRANSISTOR DESCRIPTION: The 2N3020 is Designed for General Purpose Amplifier and Switching Applications. MAXIMUM RATINGS 1.0 A lc V 80 V ce P diss 5.0 W @ Tc = 25 °C Tj -65 °C to +200 °C stg -65 °C to +200 °C T 16.5 °C/W 0JC CHARACTERISTICS SYMBOL B V ceo B V cb o IcBO B V ebo I ebo hpE V cE(SA T) V b E(SAT) f. hfe C0b C¡b â Vcr tc= 2 5 °c TEST CONDITIONS lc = 30 mA lc = 100 -
OCR Scan
Abstract: 2N3019 2N3020 NPN SILICON AP MEDIUM POWER AMPLIFIERS & SWITCHES THE 2N3019, 2N3020 ARE NPN SILICON PLANAR EPITAXIAL TRANSISTORS FOR AF MEDIUM POWER DRIVERS AND OUTPUTS, AS WELL AS FOR SWITCHING APPLICATIONS UP TO 1 AMPERE. THEY ARE COMPLEMENTARY TO THE PNP 2N4033, 2N4031. ABSOLUTE MAXIMUM RATINGS Collector-Base ¥©ltage Collector-Emitter Voltage EmittJer-Base Voltage Collector Current Total Power Dissipation (Tc -
OCR Scan
2N5020 transistor 2N4033 TELEX-03510 VCB-90V
Abstract: GAE GREAT AMERICAN ELECTROINCS 2N3020 Silicon NPN transistor 2N3020 is intended for high frequency amplifier applications. Package Type: TO-39 ABSOLUTE IV AXIMUM RATINGS (TCASE = 25°C) SYMBOL Rating VALUE UNIT VCER Collector-Emitter Voltage REB=3.0 KQ 120 Vdc VcEO Collector-Emitter Voltage 90 Vdc vEB Emitter-Base Voltage 7.0 Vdc lc Collector Current 1 Ade PD Total Device Dissipation @Ta=25°C @Tc=25°C 0.8 5.0 W Ti Junction Temperature 150 °C Electrical Characteristics (Tcase -
OCR Scan
Abstract: ÀSII SILICON NPN TRANSISTOR DESCRIPTION: The 2N3020 is Designed for General Purpose Amplifier and Switching Applications. 2N3020 PACKAGE STYLE TO- 39 MAXIMUM RATINGS Ie 1.O A 8O V 5.O W @ Te " 25 0C -65 0C to +2OO 0C -65 0C to +2OO 0C 16.5 0C/W 1= EMITTER 2 = BASE 3 = COLLECTOR Vc e Pd is s Tj Ts t g 0 jc CHARACTERISTICS T o = 25 0 c SYMBOL TEST CONDITIONS lc = 30 mA BVc e o lc = 100 mA BVc b o Ic b o BVe bo Iebo V cb = 90 V lE = 100 mA VE b = 5.0 V V ce = 10 V T a = 25 -
OCR Scan
Transistor D 798
Abstract: 90 40 120 100 300 40 120 50 30 100 15 40 - 276 2N3019 2N3020 ELECTRICAL CHARACTERISTICS (continued -
OCR Scan
3019 3CI20 100MA
Abstract: 2N3019 2N3020 HIGH CURRENT, HIGH FREQUENCY AMPLIFIERS DESCRIPTION The 2N3019 and 2N3020 are silicon planar epitaxial NPN transistors in Jedec TO-39 metal case, designed for high-current, high-frequency amplifier applications. They feature high gain and low saturation voltages. TO-39 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit 140 V 80 V V CBO Collector-base Voltage (I E = 0) V CEO Collector-emitter Voltage (I B = 0) V EBO STMicroelectronics
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2N302 P008B
Abstract: N AMER PHILIPS/DISCRETE blE T> ^53131 A ÃÃEÃ133 577 iilMJUiy 2N3020 IAPX SILICON PLANAR EPITAXIAL TRANSISTORS « N-P-N transistors in TO-39 metal envelopes intended for use as amplifiers and in , ; VCE = 10 V hFE fT 2N3019 2N3020 > 100 40 < 300 120 > 100 80 MECHANICAL DATA Fig. 1 TO , 763 This Material Copyrighted By Its Respective Manufacturer N AMER PHILIPS/DISCRETE 2N3019 2N3020 , transistors J I 2NC3Uiy 2N3020 2N3019 2N3020 D.C. current gain * IC= 0,1 mA; Vqe = 10 V hFE > < 50 -
OCR Scan
3020 3020 transistor 100//A
Abstract: SILICON PLANAR TRANSISTOR 2N3019 / 2N3020 TO-39 Metal Can Package General Transistor ABSOLUTE , 10 2N3020 30 - 100 40 - 120 40 - 120 30 - 100 >15 UNIT V V V nA uA nA MAX UNIT , 2N3019 / 2N3020 TO-39 Metal Can Package ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified , CONDITION VCB=10V, IE=0, f=1MHz VEB=0.5V, IC=0, f=1MHz IC=1mA, VCE=5V, f=1KHz 2N3019 2N3020 IE , India Limited Data Sheet Page 2 of 4 2N3019 / 2N3020 TO-39 Metal Can Package TO-39 Metal -
OCR Scan
00E6133 7Z59322
Showing first 20 results.