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Part Manufacturer Description Datasheet BUY
2N2907AUA Microsemi Corporation Transistor visit Digikey
2N2907AUB TT Electronics OPTEK Technology Small Signal Bipolar Transistor, 0.6A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon visit Digikey
2N2907AUA TT Electronics OPTEK Technology Small Signal Bipolar Transistor, 0.6A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon visit Digikey
2N2907A LEAD FREE Central Semiconductor Corp TRANS PNP 60V 0.6A TO-18 visit Digikey
2N2907AUB Microsemi Corporation Small Signal Bipolar Transistor, 0.6A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, HERMETIC SEALED, CERAMIC, CERSOT-3 visit Digikey
2N2907A Central Semiconductor Corp Small Signal Bipolar Transistor, 0.6A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-18 visit Digikey

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2N2907A Datasheet

Part Manufacturer Description PDF Type
2N2907A Advanced Semiconductor SILICON PNP TRANSISTOR - Pol=PNP / Pkg=TO18 / Vceo=60 / Ic=0.6 / Hfe=100-300 / fT(Hz)=200M / Pwr(W)=0.4 Original
2N2907A Boca Semiconductor PNP SILICON PLANAR SWITCHING TRANSISTORS - Pol=PNP / Pkg=TO18 / Vceo=60 / Ic=0.6 / Hfe=100-300 / fT(Hz)=200M / Pwr(W)=0.4 Original
2N2907A Central Semiconductor Transistors (BJT) - Single, Discrete Semiconductor Products, TRANS PNP 60V 600MA TO-18 Original
2N2907A Micro Commercial Components TRANS GP BJT PNP 60V 0.6A 3TO-18 - Pol=PNP / Pkg=TO18 / Vceo=60 / Ic=0.6 / Hfe=100-300 / fT(Hz)=200M / Pwr(W)=0.4 Original
2N2907A Micro Commercial Components Transistors (BJT) - Single, Discrete Semiconductor Products, TRANS SS PNP 600MA 60V TO18-2 Original
2N2907A Micropac Industries 61095 - GENERAL PURPOSE PNP TRANSISTOR Original
2N2907A Microsemi 60 Volts 0.6 Amps PNP BIPOLAR TRANSISTOR - Pol=PNP / Pkg=TO18 / Vceo=60 / Ic=0.6 / Hfe=100-300 / fT(Hz)=200M / Pwr(W)=0.4 Original
2N2907A Microsemi PNP Small Signal Silicon Transistor Original
2N2907A Microsemi PNP Transistor Original
2N2907A On Semiconductor Bipolar Transistor, General Purpose Transistors PNP Silicon Annular Hermetic Transistors - Pol=PNP / Pkg=TO18 / Vceo=60 / Ic=0.6 / Hfe=100-300 / fT(Hz)=200M / Pwr(W)=0.4 Original
2N2907A On Semiconductor 2N2907 - TRANSISTOR 600 mA, 60 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-18, HERMETIC SEALED, CASE 206AA-01, 3 PIN, BIP General Purpose Small Signal Original
2N2907A Philips Semiconductors PNP switching transistors - Pol=PNP / Pkg=TO18 / Vceo=60 / Ic=0.6 / Hfe=100-300 / fT(Hz)=200M / Pwr(W)=0.4 Original
2N2907A Philips Semiconductors Small-signal Transistors Original
2N2907A Semelab Silicon PNP Transistor Original
2N2907A Semico Chip: 5.0V geometry 0600 polarity PNP - Pol=PNP / Pkg=TO18 / Vceo=60 / Ic=0.6 / Hfe=100-300 / fT(Hz)=200M / Pwr(W)=0.4 Original
2N2907A Semico Type 2N2907A Geometry 0600 Polarity PNP - Pol=PNP / Pkg=TO18 / Vceo=60 / Ic=0.6 / Hfe=100-300 / fT(Hz)=200M / Pwr(W)=0.4 Original
2N2907A Semico Chip: geometry 0600 polarity PNP - Pol=PNP / Pkg=TO18 / Vceo=60 / Ic=0.6 / Hfe=100-300 / fT(Hz)=200M / Pwr(W)=0.4 Original
2N2907A Siemens Cross Reference Guide 1998 Original
2N2907A STMicroelectronics SMALL SIGNAL PNP TRANSISTORS - Pol=PNP / Pkg=TO18 / Vceo=60 / Ic=0.6 / Hfe=100-300 / fT(Hz)=200M / Pwr(W)=0.4 Original
2N2907A STMicroelectronics GENERAL PURPOSE AMPLIFIERS AND SWITCHES - Pol=PNP / Pkg=TO18 / Vceo=60 / Ic=0.6 / Hfe=100-300 / fT(Hz)=200M / Pwr(W)=0.4 Original
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2N2907A

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: PNP 2N2907 ­ 2N2907A NPN 2N2222 ­ 2N2222A SILICON PLANAR EPITAXIAL TRANSISTORS The 2N2907 and 2N2907aA are PNP transistors mounted in TO-18 metal package with the collector connected to the case . , Junction Temperature TStg Storage Temperature range Value 2N2907A 2N2907 2N2907A 2N2907 2N2907A 2N2907 2N2907A 2N2907 2N2907A 2N2907 2N2907A 2N2907 2N2907A 2N2907 2N2907A 2N2907 , , Junction to case COMSET SEMICONDUCTORS Value 2N2907A 2N2907 2N2907A 2N2907 Unit 350 K/W Comset Semiconductors
Original
2N2907 PNP Transistor 2N2907 NPN Transistor 2N2907 PNP data sheet transistor 2N2907 2n2907 metal can equivalent 2N2907A 100MH
Abstract: ST 2N2907 / 2N2907A PNP Silicon Epitaxial Planar Transistor for switching and AF amplifier , . 0.19g Absolute Maximum Ratings (Ta = 25 OC) Parameter Symbol Value ST 2N2907 ST 2N2907A 60 , / 2N2907A Characteristics at Ta = 25 OC Parameter Symbol Min. Max. Unit ST 2N2907 hFE 35 - - ST 2N2907A hFE 75 - - ST 2N2907 hFE 50 - - ST 2N2907A hFE 100 - - ST 2N2907 hFE 75 - - ST 2N2907A hFE 100 - - hFE Semtech Electronics
Original
2N2907 PNP Transistor to 92 2N2907A plastic 2N2907A TO-92 2N2907 plastic 2N2907 TRANSISTOR 2N2907 TO-92
Abstract: 2N2907A Spec Sheets Details Diodes, Transistors, Thyristors, Triacs, Di. class="hl">2N2907A HOME | CATALOG | CART |EXPRESS CHECKOUT | PARTS WATCH | NEW , Category » Transistors Buy 2N2907A at our online store! 2N2907A Availability Special Offers: FREE UPS Ground Shipping on Orders above $150.00 Lanuage Translator: 2N2907A Information Did you , Products Search for Parts Request a Quote Test Houses 2N2907A Specifications Military/High-Rel : N V American Microsemiconductor
Original
STV3208 LM3909N LM3909 1N4510 2N1711
Abstract: 2N2906A 2N2906AL 2N2906AUA 2N2906AUB Qualified Level JAN JANTX JANTXV JANS 2N2907A 2N2907AL 2N2907AUA 2N2907AUB MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage , -206AA) 4 PIN* 2N2906AUA, 2N2907AUA 3 PIN* 2N2906AUB, 2N2907AUB *See appendix A for package outline , IEBO 50 10 uAdc Adc Adc Adc uAdc 120101 Page 1 of 2 2N2906A, 2N2907A JAN SERIES , 2N2907A, UA, UB 2N2906A. UA, UB 2N2907A, UA, UB 2N2906A. UA, UB 2N2907A, UA, UB 2N2906A. UA, UB Microsemi
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2N2907A surface mount transistor ub t 2N2907A PNP Transistor 2N2907A JANTX MIL-PRF-19500/291
Abstract: 2N2905A 2N2907A ® SMALL SIGNAL PNP TRANSISTORS DESCRIPTION The 2N2905A and 2N2907A are silicon Planar Epitaxial PNP transistors in Jedec TO-39 (for 2N2905A) and in Jedec TO-18 (for 2N2907A , for 2N2907A at T C 25 o C for 2N2905A for 2N2907A Storage Temperature 0.6 0.4 W W 3 , to 175 o C 175 o C 1/7 2N2905A/2N2907A THERMAL DATA TO-39 R thj-case R , 50 f = 1MHz I C = -150 mA 2N2905A/2N2907A Normalized DC Current Gain. Collector Emitter STMicroelectronics
Original
2N2905a equivalent 2N2907A diagram 2N2905A switch circuit M2N2905A bex st 2N2905A/2N2907A P008B
Abstract: TECHNICAL DATA 2N2906A JAN, JTX, JTXV 2N2906AUA JAN, JTX, JTXV 2N2906AUB JAN, JTX, JTXV 2N2907A JAN, JTX, JTXV 2N2907AUA JAN, JTX, JTXV 2N2907AUB JAN, JTX, JTXV Processed per MIL-PRF-19500/291 , TO-18 (TO-206AA) 4 PIN 2N2906AUA, 2N2907AUA TJ, Tstg Derate linearly 2.28 mW/0C for TA > +250C. , linearly 6.6mW/0C for TC > +250C. Characteristics Symbol 3 PIN 2N2906AUB, 2N2907AUB Min. Max. Unit , ) 689-0803 3/98 REV: E Page 1 of 2 2N2906A, 2N2907A JAN SERIES ELECTRICAL CHARACTERISTICS (con't New England Semiconductor
Original
Abstract: ST 2N2907 / 2N2907A PNP Silicon Epitaxial Planar Transistor for switching and AF amplifier , . 0.19g Absolute Maximum Ratings (Ta = 25 OC) Value Parameter Symbol Unit ST 2N2907 ST 2N2907A , 2N2907 / 2N2907A Characteristics at Ta = 25 OC Parameter Symbol Min. Max. Unit ST 2N2907 hFE 35 - - ST 2N2907A hFE 75 - - ST 2N2907 hFE 50 - - ST 2N2907A hFE 100 - - ST 2N2907 hFE 75 - - ST 2N2907A hFE 100 - - Semtech Electronics
Original
2N2907 plastic package ST TRANSISTOR 2N2907 2n2907 to92 2n2222a plastic 2N2222A plastic package 2n2907 TRANSISTOR PNP
Abstract: 2N2905A 2N2907A ® SMALL SIGNAL PNP TRANSISTORS DESCRIPTION The 2N2905A and 2N2907A are silicon Planar Epitaxial PNP transistors in Jedec TO-39 (for 2N2905A) and in Jedec TO-18 (for 2N2907A , for 2N2907A at T C 25 o C for 2N2905A for 2N2907A Storage Temperature 0.6 0.4 W W 3 , 175 o C 1/7 2N2905A/2N2907A THERMAL DATA TO-39 R thj-case R thj-amb Thermal , /2N2907A TO-18 MECHANICAL DATA mm inch DIM. MIN. A TYP. MAX. MIN. TYP. 12.7 -
Original
2N2907A TO-18 J 2N2907A
Abstract: SEMICONDUCTOR! TECHNICAL d a ta 2N2906 v! 2N2906A. 2N2907 2N2907A PNP Silicon Small-Signal , IN G S 2N2906 2N2907 40 60 5.0 600 2N2906A 2N2907A 60 CRYSTALOMCS 2805 Veteran Highwav Suite , q b * 50 Vdc) `CBO 2N2906 2N2907 2N2906A 2N2907A 2N2906. 2N2907 2N2906A. 2N2907A `EBO _ Symbol Min Max Unit V , GainO) dC - 0.1 mAdc, Vq e = 10 Vdc) hFE 2N2906 2N2907 2N2906A 2N2907A 2N2906 2N2907 2N2906A 2N2907A -
OCR Scan
2N2906JAN 2N2907JAN J 2N2907
Abstract: ® 2N2905A 2N2907A SMALL SIGNAL PNP TRANSISTORS DESCRIPTION The 2N2905A and 2N2907A are silicon Planar Epitaxial PNP transistors in Jedec TO-39 (for 2N2905A) and in Jedec TO-18 (for 2N2907A , ) Collector Current Total Dissipation at Tamb 25 oC for 2N2905A for 2N2907A at T C 25 o C for 2N2905A for 2N2907A St orage Temperature Max. Operating Junction Temperature Value -60 -60 -5 -0.6 0.6 0.4 3 1.8 -65 to 175 175 Unit V V V A W W W W o o T stg Tj C C 1/7 September 2002 2N2905A/2N2907A STMicroelectronics
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2N2907A st st 2n2907a ST BEX 2n2905a st
Abstract: 2N2905A 2N2907A GENERAL PURPOSE AMPLIFIERS AND SWITCHES DESCRIPTION The 2N2905A and 2N2907A are silicon planar epitaxial PNP transistors in Jedec TO-39 (for 2N2905A) and in Jedec TO-18 (for 2N2907A , 2N2907A at T case 25 o C for 2N2905A for 2N2907A St orage Temperature Max. Operating Junction Temperature November 1997 -65 to 200 o C 200 o C 1/7 2N2905A/2N2907A THERMAL DATA , circuit 2/7 f = 1MHz 75 100 100 100 50 f = 1MHz 2N2905A/2N2907A Normalized DC Current STMicroelectronics
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15mAIB 2N2905A THOMSON 2N2907A THOMSON COMPONENTS
Abstract: 438 97 2N2906A 2N2907A 2N2906 2N2906A 2N2907 2N2907A UNITS 60 60 V 40 60 V 5.0 5.0 V 600 , =150mA, lB1=lB2=15mA 100 100 ns (Continued on Reverse Side) R3 2N2906, A and 2N2907.A PNP SILICON TRANSISTOR ELECTRICAL CHARACTERISTICS (Continued) 2N2906 2N2907 2N2906A 2N2907A SYMBOL TEST CONDITIONS MIN MAX MIN MAX hFE VCE=10V, Iq=100|jA (2N2906, 2N2907 Only) 20 35 hFE VCE=10V, Iq=100|jA (2N2906A, 2N2907A , , 2N2907A Only) 40 100 hFE VCE=10V, lc=10mA (2N2906, 2N2907 Only) 35 75 hFE VCE=10V, lc=10mA (2N2906A -
OCR Scan
2N2907 a TRANSISTOR LG 631 IC J 2N2906 transistor 2n2906 LB 122 transistor JEDECTO-18
Abstract: 2N2906 2N2907 2N2906A 2N2907A w w w. c e n t r a l s e m i . c o m PNP SILICON TRANSISTOR , -18 CASE 2N2906 2N2907 60 40 2N2906A 2N2907A 60 60 MAXIMUM RATINGS: (TA=25°C) Collector-Base Voltage , =15mA 100 2N2906A 2N2907A MIN MAX 10 10 50 60 60 5.0 0.4 1.6 1.3 2.6 200 8.0 30 45 100 UNITS nA A nA V V V V V V V MHz pF pF ns ns R4 (30-January 2012) 2N2906 2N2907 2N2906A 2N2907A PNP , hFE hFE TEST CONDITIONS VCE=10V, IC=0.1mA (2N2906, 2N2907) VCE=10V, IC=0.1mA (2N2906A, 2N2907A) VCE Central Semiconductor
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transistor 2N2907
Abstract: CRO 2N 2907 2N2907A 2907 PN 2907A THE 2N2907, 2N2907A, PN2907, PN2907A ARE PNP SILICON PLANAR , COMPLEMENTARY TO THE NPN TYPE 2N2222, 2N2222A, PN2222, PN2222A RESPECTIVELY. THE 2N2907, 2N2907A ARE PACKED IN TO-18. THE PN29071 PN2907A ARE PACKED IN T0-92A. CASE TO-18 Ã" CASE TO-92A 0 CBE 2N2907 2N2907A EBC PN2907 PN2907A ABSOLUTE MAXIMUM RATINGS 2n2907 2n2907a pn2907 pn2907a Collector-Base Vsltage , otherwise noted) PARAMETER SYMBOL 2N2907 PN2907 MIN MAX 2N2907A PN2907A MIN MAX UNIT TEST CONDITIONS -
OCR Scan
PH2907 2N2901 npn 2907a EBC FN2907 LB-15N 2n2222 micro electronics 9W9Q07A 2N2907/A PN2907/A
Abstract: DISCRETE SEMICONDUCTORS DATA SHEET M3D125 2N2907; 2N2907A PNP switching transistors , ; 2N2907A FEATURES PINNING · High current (max. 600 mA) PIN · Low voltage (max. 60 V). , open base V 2N2907 - -40 V 2N2907A - -60 V - -600 mA mW IC , switching transistors 2N2907; 2N2907A LIMITING VALUES In accordance with the Absolute Maximum Rating , - -5 V open base; IC < -100 mA 2N2907 2N2907A VEBO emitter-base voltage IC Philips Semiconductors
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st 2n2907 to-18 IC 7430 transistor 2N2222 PHILIPS 2N2907 philips 2N2222A 0612 2n2907a philips MAM263 SCA54
Abstract: 2N2905A 2N2907A ® SMALL SIGNAL PNP TRANSISTORS DESCRIPTION The 2N2905A and 2N2907A are silicon Planar Epitaxial PNP transistors in Jedec TO-39 (for 2N2905A) and in Jedec TO-18 (for 2N2907A , 2N2905A for 2N2907A at T C ≤ 25 o C for 2N2905A for 2N2907A Storage Temperature 0.6 0.4 W W , -65 to 175 o C 175 o C 1/7 2N2905A/2N2907A THERMAL DATA TO-39 R thj-case R , circuit 2/7 f = 1MHz 75 100 100 100 50 f = 1MHz I C = -150 mA 2N2905A/2N2907A STMicroelectronics
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Abstract: THE 2N2907, 2N2907A, PN2907, PN2907A ARE PNP SILICON PLANAR EPITAXIAL TRANSISTORS FOR GENERAL PURPOSE AMPLIFIERS AND MEDIUM SPEED SWITCHING APPLICATIONS. THEY ARE COMPLEMENTARY TO THE NPN TYPE 2N2222, 2N2222A, PN2222, PN2222A RESPECTIVELY. THE 2N2907, 2N2907A ARE PACKED IN TO-18. THE PN2907, PN2907A ARE , Temperature Range CASE TO-18 Irl CASE TO-92A CBE 2N2907 2N2907A 0 EBC PN2907 PN2907A 2N2907 2N2907A PN2907 , °C ELECTRICAL CHARACTERISTICS (TA°25°C unless otherwise noted) PARAMETER SYMBOL 2n2907 pn29o7 min max 2n2907a -
OCR Scan
pn2222 2n2222 pn2907 2n2907
Abstract: MCC 2N2907 2N2907A omponents 20736 Marilla Street Chatsworth !"# $ % !"# , Ratings Symbol VCEO VCBO Rating Collector-Emitter Voltage 2N2907 2N2907A Collector-Base , cut-off current 2N2907 (VCB=50Vdc, IE=0) (VCB=50Vdc, IE=0,TA=150) 2N2907A (VCB=50Vdc, IE=0) (VCB , =10Vdc)* DC Current Gain 2N2907A (IC=0.1mAdc, VCE=10Vdc) (IC=1.0mAdc, VCE=10Vdc) (IC=10mAdc, VCE , MCC 2N2907,2N2907A Symbol Parameter Min Max Units - 400 1.6 mVdc Vdc Micro Commercial Components
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ic 4521 10Vdc IC 406
Abstract: 2N 2907 2N2907A P N 2 9 07 PN2907A THE 2N2907, 2N2907A, PN2907, PN2907A ARE PNP SILICON PLANAR , COMPLEMENTARY TO THE NPN TYPE 2N2222, 2N2222A, PN2222, PN2222A RESPECTIVELY. THE 2N2907, 2N2907A ARE PACKED IN TO-18. THE PN2907, PN2907A ARE PACKED IN T0-92A. CASE TO-18 CBE 2N2907 2N2907A CASE TO-92A EBC PN2907 PN2907A ABSOLUTE MAXIMUM RATINGS 2N2907 2N2907A PN2907 PN2907A Collector-Base Völtage "vCB0 60V 60V , ) PARAMETER SYMBOL 2N2907 PN2907 MIN MAX 2N2907A PN2907A MIN MAX UNIT TEST CONDITIONS Collector-Base Breakdown -
OCR Scan
NPN 2907 PNP pN2907 1500C TA-25 0610B
Abstract: 2N2906AUBC 2N2907A 2N2907AL 2N2907AUA 2N2907AUB 2N2907AUBC JANSM ­ 3K Rads (Si) JANSD ­ 10K Rads , PT Operating & Storage Junction Temperature Range (1) TO-18 (TO-206AA) 2N2906A, 2N2907A , 1. See MIL-PRF-19500/291 for derating curves. 2N2906AUA, 2N2907AUA ELECTRICAL CHARACTERISTICS , Cutoff Current VCE = 50Vdc T4-LDS-0055 Rev. 3 (080857) 3 PIN 2N2906AUB, 2N2907AUB 2N2906AUBC, 2N2907AUBC (UBC = Ceramic Lid Version) Page 1 of 2 TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA Microsemi
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MICROSEMI 2N2907A
Abstract: Current­Gain - Bandwidth Product - fT = 200 MHz (Min) @ IC = 50 mAdc *2N2904A, 2N2905A and 2N2907A are , 2N2905, 2N2907 2N2904A, 2N2906A 2N2905A, 2N2907A 35 40 75 - - - - - - (IC = ­ 1.0 mAdc, VCE = ­ 10 Vdc) 2N2905, 2N2907 2N2904A, 2N2906A 2N2905A, 2N2907A 25 40 100 - , , 2N2907A 75 40 100 - - - - - - (IC = ­ 150 mAdc, VCE = ­ 10 Vdc)(1) 2N2904A , ) 2N2905, 2N2907 2N2904A, 2N2906A 2N2905A, 2N2907A 30 40 50 - - - - - - - - Motorola
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2n2907 Motorola motorola transistor 2N2907A 2N2905 MOTOROLA 2N2905A MOTOROLA MOTOROLA 2N2905A motorola transistor 2N2907 2N2219 2N2904A/2N2905 205AD 2N2906A/2N2907 206AA 2N2904A/D
Abstract: , TRANSISTOR, PNP, SILICON, SWITCHING, TYPES 2N2906A, 2N2906AL, 2N2907A, 2N2907AL, 2N2906AUA, 2N2907AUA , , TRANSISTOR, PNP, SILICON, SWITCHING, TYPES 2N2906A, 2N2906AL, 2N2907A, 2N2907AL, 2N2906AUA, * Comments , N/A N/A 2N2906A, L, 2N2907A, L 2N2906AUA, 2N2907AUA 2N2906AUB, 2N2907AUB 2N2906AUBC , Max hFE2 IC = 1.0 mA dc 2N2906A, 2N2907A, 2N2906A L, UA,UB, L, UA,UB, , L, UA,UB, UBC UBC UBC 40 75 40 175 Types Limit hFE at VCE = 10 V dc hFE3 IC = 10 mA dc 2N2907A L, UA DEPARTMENT OF DEFENSE
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JANHCB2N2907A 2N906A transistor equivalent 0107 NA UBC-100 2N906 2N2907A die 2N2907A equivalences MIL-PRF-19500/291R MIL-PRF-19500 JANHCB2N2906A JANHCD2N2906A JANHCD2N2907A
Abstract: , SILICON, SWITCHING, TYPES 2N2906A, 2N2906AL, 2N2907A, 2N2907AL, 2N2906AUA, 2N2907AUA, 2N2906AUB , ) (4) PT PT PT TA = +25°C (1) (2) W 2N2906A, L, 2N2907A, L 2N2906AUA, 2N2907AUA , hFE5 (1) IC = 500 mA dc 2N2906A, 2N2907A, 2N2906A 2N2907A 2N2906A 2N2907A 2N2906A 2N2907A 2N2906A 2N2907A L, L, UA,UB, L, UA,UB, , L, UA,UB, L, UA,UB, L, UA,UB, L, UA,UB, L, UA,UB, L, UA,UB, L, UA,UB , 100 40 50 Max 175 450 120 300 Types 2N2906A, 2N2907A, L, UA, UB, UBC, UBN, UBCN Microsemi
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MIL-PRF-19500/291U MIL-PRF-19500/291T 2N2906AUBN 2N2906AUBCN 2N2907AUBN 2N2907AUBCN
Abstract: 2N2905A 2N2907A ® SMALL SIGNAL PNP TRANSISTORS DESCRIPTION The 2N2905A and 2N2907A are silicon Planar Epitaxial PNP transistors in Jedec TO-39 (for 2N2905A) and in Jedec TO-18 (for 2N2907A , for 2N2907A at T C 25 o C for 2N2905A for 2N2907A Storage Temperature 0.6 0.4 W W 3 , 175 o C 1/7 2N2905A/2N2907A THERMAL DATA TO-39 R thj-case R thj-amb Thermal , /2N2907A TO-18 MECHANICAL DATA mm inch DIM. MIN. A TYP. MAX. MIN. TYP. 12.7 -
OCR Scan
2905a ic 2905a 2904a 2906A 2907A A1290
Abstract: 2N 2907 2N2907A P N 2 9 07 PN2907A THE 2N2907, 2N2907A, PN2907, PN2907A ARE PNP SILICON PLANAR , COMPLEMENTARY TO THE NPN TYPE 2N2222, 2N2222A, PN2222, PN2222A RESPECTIVELY. THE 2N2907, 2N2907A ARE PACKED IN TO-18. THE PN2907, PN2907A ARE PACKED IN T0-92A. CASE TO-18 CBE 2N2907 2N2907A CASE TO-92A EBC PN2907 PN2907A ABSOLUTE MAXIMUM RATINGS 2N2907 2N2907A PN2907 PN2907A Collector-Base Völtage "vCB0 60V 60V , ) PARAMETER SYMBOL 2N2907 PN2907 MIN MAX 2N2907A PN2907A MIN MAX UNIT TEST CONDITIONS Collector-Base Breakdown -
OCR Scan
2N3485 2N3486 itt 2907A st 2n 2907a itt 2907 2N2907A itt 2n2222 st 2n 2905a 2N2904 2N2218 2N2221 2N2906/2907
Abstract: 2907A -20 -10 nA lE =0 VCB =-50 V T,mb=150°C 2N2906 2N 2907 2N 2906A 2N2907A -20 -10 ilA -
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215 e3 JANTXV 2N2907AUB 2N2906A-2N2907A MIL-PRF-19500/291K MIL-PRF-19500/291J T0-18
Abstract: ® 2N2905A 2N2907A SMALL SIGNAL PNP TRANSISTORS DESCRIPTION The 2N2905A and 2N2907A are silicon Planar Epitaxial PNP transistors in Jedec TO-39 (for 2N2905A) and in Jedec TO-18 (for 2N2907A , ) Collector Current Total Dissipation at Tamb 25 oC for 2N2905A for 2N2907A at T C 25 o C for 2N2905A for 2N2907A St orage Temperature Max. Operating Junction Temperature Value -60 -60 -5 -0.6 0.6 0.4 3 1.8 -65 to 175 175 Unit V V V A W W W W o o T stg Tj C C 1/7 September 2002 2N2905A/2N2907A -
OCR Scan
2IM2907 2907 2N2908 A2907A a 2907 2907A BF
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