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| Part Number | Manufacturer | Description | ||||||
| 1. | Advanced Semiconductor, Inc. | SILICON PNP TRANSISTOR - Pol=PNP / Pkg=TO18 / Vceo=60 / Ic=0.6 / Hfe=100-300 / fT(Hz)=200M / Pwr(W)=0.4 | 77.05 Kb | 2 Pg. | ||||
| 2. | Boca Semiconductor | PNP SILICON PLANAR SWITCHING TRANSISTORS - Pol=PNP / Pkg=TO18 / Vceo=60 / Ic=0.6 / Hfe=100-300 / fT(Hz)=200M / Pwr(W)=0.4 | 41.99 Kb | 2 Pg. | ||||
| 3. | Philips Semiconductors / NXP Semiconductors | PNP switching transistors - Pol=PNP / Pkg=TO18 / Vceo=60 / Ic=0.6 / Hfe=100-300 / fT(Hz)=200M / Pwr(W)=0.4 | 49.83 Kb | 8 Pg. | ||||
| 4. | Semicoa Semiconductor | Chip: 5.0V geometry 0600 polarity PNP - Pol=PNP / Pkg=TO18 / Vceo=60 / Ic=0.6 / Hfe=100-300 / fT(Hz)=200M / Pwr(W)=0.4 | 44.37 Kb | 2 Pg. | ||||
| 5. | ST Microelectronics | Shortform Data Book 1988 | 38.25 Kb | 1 Pg. | ||||
| 6. | Raytheon Company | Selection Guide 1977 | 104.03 Kb | 2 Pg. | ||||
| 7. | Continental Device India Limited | Silicon Planar Switching Transistor | 66.74 Kb | 2 Pg. | ||||
| 8. | Siemens Semiconductors | Cross Reference Guide 1998 | 26.71 Kb | 7 Pg. | ||||
| 9. | Ferranti Semiconductors | Quick Reference Guide 1985 | 38.24 Kb | 1 Pg. | ||||
| 10. | Ferranti Semiconductors | Quick Reference Guide 1985 | 107.99 Kb | 3 Pg. |
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| 1. | 117.36 Kb • 2 Pages |
Abstract: ... ST 2N2907 / 2N2907A. PNP Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into one group according to its DC current gain. As complementary ... Labels: 2N2907A |
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| 2. | 174.87 Kb • 2 Pages |
Abstract: ... ST 2N2907 / 2N2907A. PNP Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into one group according to its DC current gain. As complementary ... Labels: 2N2907A |
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| 3. | 29.07 Kb • 1 Pages |
Abstract: ... 2N2905, 2N2905A, 2N2907, 2N2907A. Chip type 2C2907A by Semicoa Semiconductors provides perfor-mance similar to these devices. Product Summary: Part Numbers: 2N2905, 2N2905A, 2N2905AL, 2N2907 ... Labels: 2N2907A |
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| 4. | 56.77 Kb • 2 Pages |
Abstract: ... 2N2907A 2N2907AL 2N2907AUA 2N2907AUB. JAN JANTX JANTXV JANS. MAXIMUM RATINGS. Ratings Symbol All Types Unit. Collector-Emitter Voltage VCEO 60 Vdc. Collector-Base Voltage VCBO 60 Vdc. Emitter-Base ... Labels: 2N2907A |
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| 5. | 117.28 Kb • 2 Pages |
Abstract: ... 2N2907 2N2907A PNP Switching Transistors Features • High current (max.600mA) • Low voltage (max.60V) Maximum Ratings Symbol Rating Rating Unit VCEO Collector-Emitter Voltage 2N2907 ... Labels: 2N2907A |
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| 6. | 80.03 Kb • 7 Pages |
Abstract: ... 2N2905A 2N2907A. GENERAL PURPOSE AMPLIFIERS AND SWITCHES. DESCRIPTION The 2N2905A and 2N2907A are silicon planar epitaxial PNP transistors in Jedec TO-39 (for 2N2905A) and in Jedec TO-18 (for ... Labels: 2N2907A |
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| 7. | 725.46 Kb • 7 Pages |
Abstract: ... 2N2905A 2N2907A. SMALL SIGNAL PNP TRANSISTORS. DESCRIPTION. The 2N2905A and 2N2907A are silicon Planar Epitaxial PNP transistors in Jedec TO-39 (for 2N2905A) and in Jedec TO-18 (for 2N2907A) metal ... Labels: 2N2907A |
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| 8. | 43 Kb • 2 Pages |
Abstract: ... Type 2N2907A. Geometry 0600 Polarity PNP Qual Level: JAN - JANS. Data Sheet No. 2N2907A. Generic Part Number: 2N2907A. REF: MIL-PRF-19500/291. Features: • General-purpose transistor for switching ... Labels: 2N2907A |
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| 9. | 209.38 Kb • 2 Pages |
Abstract: ... PRINCIPAL DEVICE TYPES 2N2905A 2N2907A CMPT2907A CMST2907A CXT2907A CZT2907A PN2907A. Process EPITAXIAL PLANAR. Die Size 19 x 19 MILS. Die Thickness 7.1 MILS. Base Bonding Pad Area 3.5 x 4.3 MILS ... Labels: 2N2907A |
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| 10. | 205.4 Kb • 2 Pages |
Abstract: ... PRINCIPAL DEVICE TYPES 2N2905A 2N2907A CMPT2907A CMST2907A CXT2907A CZT2907A PN2907A. Process EPITAXIAL PLANAR. Die Size 19 x 19 MILS. Die Thickness 9.0 MILS. Base Bonding Pad Area 3.5 x 4.3 MILS ... Labels: 2N2907A |
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