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Part Manufacturer Description Datasheet BUY
2N2907AUA Microsemi Corporation Small Signal Bipolar Transistor, 0.6A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, CERAMIC PACKAGE-4 visit Digikey Buy
2N2907AUB TT Electronics OPTEK Technology Small Signal Bipolar Transistor, 0.6A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon visit Digikey Buy
2N2907AUA TT Electronics OPTEK Technology Small Signal Bipolar Transistor, 0.6A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon visit Digikey Buy
2N2907A Central Semiconductor Corp Small Signal Bipolar Transistor, 0.6A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-18 visit Digikey Buy
2N2907AL Microsemi Corporation Small Signal Bipolar Transistor, 0.6A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-206AA, SIMILAR TO TO-18, 3 PIN visit Digikey Buy
2N2907AUB Microsemi Corporation Small Signal Bipolar Transistor, 0.6A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, HERMETIC SEALED, CERAMIC, CERSOT-3 visit Digikey Buy

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2N2907 Datasheet

Part Manufacturer Description PDF Type
2N2907 Micro Commercial Components PNP Switching Transistor Original
2N2907 On Semiconductor Bipolar Transistor, General Purpose Transistors PNP Silicon Annular Hermetic Transistor, TO-18 - Pol=PNP / Pkg=TO18 / Vceo=40 / Ic=0.6 / Hfe=100-300 / fT(Hz)=200M / Pwr(W)=0.4 Original
2N2907 On Semiconductor 2N2907 - TRANSISTOR 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-18, BIP General Purpose Small Signal Original
2N2907 Philips Semiconductors PNP switching transistors - Pol=PNP / Pkg=TO18 / Vceo=40 / Ic=0.6 / Hfe=100-300 / fT(Hz)=200M / Pwr(W)=0.4 Original
2N2907 Semelab Bipolar PNP Device in a Hermetically Sealed TO18 Metal Package - Pol=PNP / Pkg=TO18 / Vceo=40 / Ic=0.6 / Hfe=100-300 / fT(Hz)=200M / Pwr(W)=0.4 Original
2N2907 Semico Chip Type 2C2907A Geometry 0600 Polarity PNP - Pol=PNP / Pkg=TO18 / Vceo=40 / Ic=0.6 / Hfe=100-300 / fT(Hz)=200M / Pwr(W)=0.4 Original
2N2907 Siemens Cross Reference Guide 1998 Original
2N2907 STMicroelectronics GENERAL PURPOSE AMPLIFIERS AND SWITCHES - Pol=PNP / Pkg=TO18 / Vceo=40 / Ic=0.6 / Hfe=100-300 / fT(Hz)=200M / Pwr(W)=0.4 Original
2N2907 Various Russian Datasheets Transistor Original
2N2907 Central Semiconductor PNP METAL CAN Transistors Scan
2N2907 Central Semiconductor BJT, PNP, Silicon Epitaxial Transistor, IC 0.6A - Pol=PNP / Pkg=TO18 / Vceo=40 / Ic=0.6 / Hfe=100-300 / fT(Hz)=200M / Pwr(W)=0.4 Scan
2N2907 Continental Device India Semiconductor Device Data Book 1996 Scan
2N2907 Crimson Semiconductor Transistor Selection Guide Scan
2N2907 Dionics PNP Si High Current Transistor Scan
2N2907 Fairchild Semiconductor PNP small signal general purpose amplifier & switch . - Pol=PNP / Pkg=TO18 / Vceo=40 / Ic=0.6 / Hfe=100-300 / fT(Hz)=200M / Pwr(W)=0.4 Scan
2N2907 Fairchild Semiconductor Misc. Data Book Scans 1975/76 Scan
2N2907 Fairchild Semiconductor Full Line Condensed Catalogue 1977 Scan
2N2907 Ferranti Semiconductors Metal Can Transistors (Short Form) Scan
2N2907 Ferranti Semiconductors Shortform Data Book 1971 Scan
2N2907 Ferranti Semiconductors Quick Reference Guide 1985 Scan
Showing first 20 results.

2N2907

Catalog Datasheet MFG & Type PDF Document Tags

2N2907

Abstract: 2N2907A PNP 2N2907 ­ 2N2907A NPN 2N2222 ­ 2N2222A SILICON PLANAR EPITAXIAL TRANSISTORS The 2N2907 and , Junction Temperature TStg Storage Temperature range Value 2N2907A 2N2907 2N2907A 2N2907 2N2907A 2N2907 2N2907A 2N2907 2N2907A 2N2907 2N2907A 2N2907 2N2907A 2N2907 2N2907A 2N2907 , , Junction to case COMSET SEMICONDUCTORS Value 2N2907A 2N2907 2N2907A 2N2907 Unit 350 K/W 146 K/W 1/3 PNP 2N2907 ­ 2N2907A NPN 2N2222 ­ 2N2222A ELECTRICAL CHARACTERISTICS TC
Comset Semiconductors
Original
2N2907 PNP Transistor 2N2907 NPN Transistor 2N2907 PNP data sheet transistor 2N2907 2n2907 metal can equivalent 2N2907A 100MH

2N2907

Abstract: 2n2907a 2N2906 2N2907 2N2906A 2N2907A w w w. c e n t r a l s e m i . c o m PNP SILICON TRANSISTOR , -18 CASE 2N2906 2N2907 60 40 2N2906A 2N2907A 60 60 MAXIMUM RATINGS: (TA=25°C) Collector-Base Voltage , V V V V V V MHz pF pF ns ns R4 (30-January 2012) 2N2906 2N2907 2N2906A 2N2907A PNP , hFE hFE TEST CONDITIONS VCE=10V, IC=0.1mA (2N2906, 2N2907) VCE=10V, IC=0.1mA (2N2906A, 2N2907A) VCE=10V, IC=1.0mA (2N2906, 2N2907) VCE=10V, IC=1.0mA (2N2906A, 2N2907A) VCE=10V, IC=10mA (2N2906, 2N2907) VCE
Central Semiconductor
Original
2N2907A PNP Transistor 2n2907 TRANSISTOR PNP transistor 2N2907

2n2907

Abstract: 2N2907A SEMICONDUCTOR! TECHNICAL d a ta 2N2906 v! 2N2906A. 2N2907 2N2907A PNP Silicon Small-Signal , IN G S 2N2906 2N2907 40 60 5.0 600 2N2906A 2N2907A 60 CRYSTALOMCS 2805 Veteran Highwav Suite , q b * 50 Vdc) `CBO 2N2906 2N2907 2N2906A 2N2907A 2N2906. 2N2907 2N2906A. 2N2907A `EBO _ Symbol Min Max Unit V , GainO) dC - 0.1 mAdc, Vq e = 10 Vdc) hFE 2N2906 2N2907 2N2906A 2N2907A 2N2906 2N2907 2N2906A 2N2907A
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OCR Scan
2N2906JAN 2N2907JAN J 2N2907

2N2907 PNP Transistor to 92

Abstract: 2N2907A plastic ST 2N2907 / 2N2907A PNP Silicon Epitaxial Planar Transistor for switching and AF amplifier , . 0.19g Absolute Maximum Ratings (Ta = 25 OC) Parameter Symbol Value ST 2N2907 ST 2N2907A 60 , / 2N2907A Characteristics at Ta = 25 OC Parameter Symbol Min. Max. Unit ST 2N2907 hFE 35 - - ST 2N2907A hFE 75 - - ST 2N2907 hFE 50 - - ST 2N2907A hFE 100 - - ST 2N2907 hFE 75 - - ST 2N2907A hFE 100 - - hFE
Semtech Electronics
Original
2N2907 PNP Transistor to 92 2N2907A plastic 2N2907A TO-92 2N2907 plastic 2N2907 TRANSISTOR 2N2907 TO-92

2N2907

Abstract: 2n2907 pnp 2N2906, 2N2907 PNP Silicon Epitaxial Planar Transistors with high cutoff frequency, for high , turn-off time, saturated operation Fig. 3: Test circuit for non-saturated operation 150 2N2906, 2N2907 , 2N2906 hFE 20 â'" â'" - 2N2907 hFE 35 - - - at-VcE = 10 V, -lc = 1 mA 2 N2906 hFE 25 - - - 2N2907 hFE 50 - - - at-VcE = 10 V, -lc = 10 mA 2N2906 hFE 35 - - - 2N2907 hFE 75 - - - at -VCE = 10 V, -lc = 150 mA 2N2906 hFE 40 - 120 - 2N2907 hFE 100 - 300 - at-VcE = 10 V, -lc = 0.5 A 2N2906 hFE 20
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OCR Scan
MAX580 transistor 2n2906

2n2905 2n2907

Abstract: 2N2905 equivalent 2N2905 2N2907 GENERAL PURPOSE AMPLIFIERS AND SWITCHES DESCRIPTION The 2N2905 and 2N2907 are silicon planar epitaxial PNP transistors in Jedec TO-39 (for 2N2905) and in Jedec TO-18 (for 2N2907 , . 2N2905 approved to CECC 50002-102, 2N2907 approved to CECC 50002-103 available on request. TO-18 TO , 2N2907 at T case 25 o C for 2N2905 for 2N2907 St orage Temperature Max. Operating Junction Temperature November 1997 -65 to 200 o C 200 o C 1/5 2N2905/2N2907 THERMAL DATA T
STMicroelectronics
Original
2n2905 2n2907 2N2905 equivalent st 2n2907 to-18 ST 2N2905 transistor 2N2905 2N2905 transistor 2N2905/2N2907 P008B

2N2901

Abstract: npn 2907a EBC CRO 2N 2907 2N2907A 2907 PN 2907A THE 2N2907, 2N2907A, PN2907, PN2907A ARE PNP SILICON PLANAR , COMPLEMENTARY TO THE NPN TYPE 2N2222, 2N2222A, PN2222, PN2222A RESPECTIVELY. THE 2N2907, 2N2907A ARE PACKED IN TO-18. THE PN29071 PN2907A ARE PACKED IN T0-92A. CASE TO-18 Ã" CASE TO-92A 0 CBE 2N2907 2N2907A EBC PN2907 PN2907A ABSOLUTE MAXIMUM RATINGS 2n2907 2n2907a pn2907 pn2907a Collector-Base Vsltage , otherwise noted) PARAMETER SYMBOL 2N2907 PN2907 MIN MAX 2N2907A PN2907A MIN MAX UNIT TEST CONDITIONS
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OCR Scan
PH2907 2N2901 npn 2907a EBC FN2907 LB-15N 2n2222 micro electronics 9W9Q07A 2N2907/A PN2907/A

2N2907 PNP Transistor to 92

Abstract: 2N2907 plastic ST 2N2907 / 2N2907A PNP Silicon Epitaxial Planar Transistor for switching and AF amplifier , . 0.19g Absolute Maximum Ratings (Ta = 25 OC) Value Parameter Symbol Unit ST 2N2907 ST 2N2907A , 2N2907 / 2N2907A Characteristics at Ta = 25 OC Parameter Symbol Min. Max. Unit ST 2N2907 hFE 35 - - ST 2N2907A hFE 75 - - ST 2N2907 hFE 50 - - ST 2N2907A hFE 100 - - ST 2N2907 hFE 75 - - ST 2N2907A hFE 100 - -
Semtech Electronics
Original
2N2907 plastic package ST TRANSISTOR 2N2907 2n2907 to92 2N2222A plastic package 2n2222a plastic st 2n2222a

2N2907

Abstract: 2n2907 TRANSISTOR PNP =150mA, lB1=lB2=15mA 100 100 ns (Continued on Reverse Side) R3 2N2906, A and 2N2907.A PNP SILICON TRANSISTOR ELECTRICAL CHARACTERISTICS (Continued) 2N2906 2N2907 2N2906A 2N2907A SYMBOL TEST CONDITIONS MIN MAX MIN MAX hFE VCE=10V, Iq=100|jA (2N2906, 2N2907 Only) 20 35 hFE VCE=10V, Iq=100|jA (2N2906A, 2N2907A , 438 97 2N2906A 2N2907A 2N2906 2N2906A 2N2907 2N2907A UNITS 60 60 V 40 60 V 5.0 5.0 V 600 , , 2N2907A Only) 40 100 hFE VCE=10V, lc=10mA (2N2906, 2N2907 Only) 35 75 hFE VCE=10V, lc=10mA (2N2906A
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OCR Scan
2N2907 a TRANSISTOR LG 631 IC J 2N2906 LB 122 transistor JEDECTO-18

2n2907 Motorola

Abstract: motorola transistor 2N2907A 2N2905, 2N2907 2N2904A, 2N2906A 2N2905A, 2N2907A 35 40 75 - - - - - - (IC = ­ 1.0 mAdc, VCE = ­ 10 Vdc) 2N2905, 2N2907 2N2904A, 2N2906A 2N2905A, 2N2907A 25 40 100 - , ) 2N2905, 2N2907 2N2904A, 2N2906A 2N2905A, 2N2907A 30 40 50 - - - - - - - - , MOTOROLA General Purpose Transistors 2N2904A* thru 2N2907,A* PNP Silicon Annular , Current­Gain - Bandwidth Product - fT = 200 MHz (Min) @ IC = 50 mAdc *2N2904A, 2N2905A and 2N2907A are
Motorola
Original
2n2907 Motorola motorola transistor 2N2907A 2N2905 MOTOROLA 2N2905A MOTOROLA motorola transistor 2N2907 MOTOROLA 2N2905A 2N2219 2N2904A/2N2905 205AD 2N2906A/2N2907 206AA 2N2904A/D

2N2222

Abstract: 2N2907 . PINNING PIN 1 2 3 emitter base 2N2907; 2N2907A DESCRIPTION collector, connected to case , voltage collector-emitter voltage 2N2907 2N2907A collector current (DC) total power dissipation DC current , System (IEC 134). SYMBOL VcBO V CEO 2N2907; 2N2907A PARAMETER collector-base voltage collector-emitter voltage 2N2907 2N2907A emitter-base voltage collector current (DC) peak collector current peak , current 2N2907A emitter cut-off current DC current gain 2N2907 lE = 0; V cb - 50 V |E = 0; V cb = -5 0
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OCR Scan
MGD624

2N2906

Abstract: 2N2907 TRANSISTOR -sn- ti J 2N2906 2N2907 These transistors are silicon planar epitaxial pnp devices conforming to , and general purpose applications. QUICK REFERENCE DATA 2N2906 2N2907 VCBOmax- 60V VCEOmax- 40V , GENERAL PURPOSE 2N2906 SMALL SIGNAL TRANSISTORS 2N2907 I I T-3N- »V Electrical , transfer ratio Vce - 10V, lc = 0.1mA and Tamb = 255C 2N2906 20 2N2907 35 Vce = 10V, lc = 1.0mA and Tamb = 25°c 2N2906 25 2N2907 50 Vce = 10V, lc = 10mA and Tarnb = 25Â
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OCR Scan
transistor t3n ledex T31N PNP 2N2907 2N2906 to-92 5B07 SO-132A C7/B11 Q7G13 07D13 0GDQ12E T-31-
Abstract: N AI1ER PHILIPS/DISCRETE bTE T > bb53^31 002612^ OMb I IAPX 2N2907 2N2907A l , . 600 mA ^tot 2N2907 2N2907A max. _ IC Collector-base voltage (open emitter) max , /DISCRETE 2N2907 2N2907A bTE T > bti53T31 DDE6130 fibfl R A T IN G S Limiting values in , Silicon planar epitaxial transistors bb53T31 DDEfll31 7TM â  APX 2N2907 1 2N2907A J C H A R A , ; 5 < 0,02. r August 1990 761 N AMER PHILIPS/DISCRETE 2N2907 2N2907A bTE D â -
OCR Scan
7Z69420 53T31 S3T31

2N2907

Abstract: PN2907 2N 2907 2N2907A P N 2 9 07 PN2907A THE 2N2907, 2N2907A, PN2907, PN2907A ARE PNP SILICON PLANAR , COMPLEMENTARY TO THE NPN TYPE 2N2222, 2N2222A, PN2222, PN2222A RESPECTIVELY. THE 2N2907, 2N2907A ARE PACKED IN TO-18. THE PN2907, PN2907A ARE PACKED IN T0-92A. CASE TO-18 CBE 2N2907 2N2907A CASE TO-92A EBC PN2907 PN2907A ABSOLUTE MAXIMUM RATINGS 2N2907 2N2907A PN2907 PN2907A Collector-Base Völtage "vCB0 60V 60V , ) PARAMETER SYMBOL 2N2907 PN2907 MIN MAX 2N2907A PN2907A MIN MAX UNIT TEST CONDITIONS Collector-Base Breakdown
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OCR Scan
NPN 2907 PNP pN2907 1500C TA-25 0610B

st 2n2907 to-18

Abstract: IC 7430 DISCRETE SEMICONDUCTORS DATA SHEET M3D125 2N2907; 2N2907A PNP switching transistors , open base V 2N2907 - -40 V 2N2907A - -60 V - -600 mA mW IC , switching transistors 2N2907; 2N2907A LIMITING VALUES In accordance with the Absolute Maximum Rating , - -5 V open base; IC < -100 mA 2N2907 2N2907A VEBO emitter-base voltage IC , PNP switching transistors 2N2907; 2N2907A CHARACTERISTICS Tamb = 25 °C unless otherwise
Philips Semiconductors
Original
IC 7430 2N2907 philips transistor 2N2222 PHILIPS 2N2222A 0612 Philips 2N2907 2n2907a philips MAM263 SCA54

ic 4521

Abstract: 2N2907 MCC 2N2907 2N2907A omponents 20736 Marilla Street Chatsworth !"# $ % !"# , Ratings Symbol VCEO VCBO Rating Collector-Emitter Voltage 2N2907 2N2907A Collector-Base , cut-off current 2N2907 (VCB=50Vdc, IE=0) (VCB=50Vdc, IE=0,TA=150) 2N2907A (VCB=50Vdc, IE=0) (VCB=50Vdc, IE=0,TA=150) Emitter Cut-off current (IC=0, VEB=5.0Vdc) DC Current Gain 2N2907 (IC=0.1mAdc, VCE , MCC 2N2907,2N2907A Symbol Parameter Min Max Units - 400 1.6 mVdc Vdc
Micro Commercial Components
Original
ic 4521 10Vdc J 2N2907A IC 406

2N2907 Transistor

Abstract: 2N2907 N AUER PHILIPS/DISCRETE b^E D m 1,^53^31 ooeaia^ 04b i 2N2907 2N2907A IAPX I SILICON PLANAR , voltage (open emitter) ~vCBO max. 60 V Collector-emitter voltage (open base) 2N2907 2N2907A ~vCEO -VCEO , Material Copyrighted By Its Respective Manufacturer AUER PHILIPS/DISCRETE 2N2907 2N2907A bTE D 0DS6130 , 2N2907 -VCEO max. 40 V 2N2907A -VCE0 max. 60 V Emitter-base voltage (open collector) -vEB0 max. 5 V , * bTE D â  bbSa'm 0D2Ã131 7TM 2N2907 2N2907A IAPX A Collector cut-off current 2N2907 2N2907A
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OCR Scan
v2n2907a

2N2907

Abstract: 2N2907A THE 2N2907, 2N2907A, PN2907, PN2907A ARE PNP SILICON PLANAR EPITAXIAL TRANSISTORS FOR GENERAL PURPOSE AMPLIFIERS AND MEDIUM SPEED SWITCHING APPLICATIONS. THEY ARE COMPLEMENTARY TO THE NPN TYPE 2N2222, 2N2222A, PN2222, PN2222A RESPECTIVELY. THE 2N2907, 2N2907A ARE PACKED IN TO-18. THE PN2907, PN2907A ARE , Temperature Range CASE TO-18 Irl CASE TO-92A CBE 2N2907 2N2907A 0 EBC PN2907 PN2907A 2N2907 2N2907A PN2907 , °C ELECTRICAL CHARACTERISTICS (TA°25°C unless otherwise noted) PARAMETER SYMBOL 2n2907 pn29o7 min max 2n2907a
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OCR Scan
pn2222 2n2222 pn2907 2n2907
Abstract: SILICON PLANAR SWITCHING TRANSISTORS 2N2906 2N2907 TO-18 Metal Can Package Switching and , *IC=500mA, VCE=10V hFE IC=0.1mA, VCE=10V IC=1mA, VCE=10V DC Current Gain 2N2907 >20 , 2N2907 TO-18 Metal Can Package ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise , 2N2906_2907Rev010303E Continental Device India Limited Data Sheet Page 2 of 4 2N2906 2N2907 TO , Page 3 of 4 Customer Notes 2N2906 2N2907 TO-18 Metal Can Package Com pon e n t D isposa Continental Device India
Original
C-120 2907R 010303E

2N2907

Abstract: ic 4521 !"# 2N2907 2N2907A Features · · High current (max.600mA) Low voltage (max.60V) PNP Switching , Ratings Symbol VCEO Rating Collector-Emitter Voltage 2N2907 2N2907A Collector-Base Voltage Emitter-Base , @ 25 C Unless Otherwise Specified Symbol Parameter Collector cut-off current 2N2907 (VCB=50Vdc, IE=0) (VCB=50Vdc, IE=0,TA=150) 2N2907A (VCB=50Vdc, IE=0) (VCB=50Vdc, IE=0,TA=150) Emitter Cut-off current (IC=0, VEB=5.0Vdc) DC Current Gain 2N2907 (IC=0.1mAdc, VCE=10Vdc) (IC=1.0mAdc, VCE=10Vdc) (IC=10mAdc, VCE
Micro Commercial Components
Original

2907

Abstract: 2N2907 PNP SILICON TRANSISTORS, EPITAXIAL PLANAR TRANSISTORS PNP SILICIUM, PLANAR EPITAXIAUX *2N2906,A *2N2907,A Compi, of 2N 2221, A and 2N 2222, A LF or HF amplification Amplification BF ou HF Medium current switching Commutation à moyen courant ^ Preferred device Dispositif recommandé vCEO -40 V -60 V 2N 2906 - 2907 2N 2906 A - 2907 A 'c -0,6 A h21E (-150 mA) 40-120 100-300 2N 2906, A 2N , â'"1 mA VCE â'"10 V 2N 2906 2N2907 2N 2906A 2N 2907A 25 50 40 100 Iq â'"10 mA vCE â'"10 V
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OCR Scan
2IM2907 2907 2907a 2N2908 A2907A a 2907

2907

Abstract: N2907A 2N2906 2N2907 2N2906A 2N2907A w w w. c e n t r a l s e m i . c o m PNP SILICON TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N2906, 2N2907 series types are silicon PNP epitaxial planar , -18 CASE 2N2906 2N2907 60 40 2N2906A 2N2907A 60 60 MAXIMUM RATINGS: (TA=25°C) Collector-Base Voltage , ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) 2N2906 2N2907 SYMBOL TEST CONDITIONS MIN MAX , V V V V V V MHz pF pF ns ns R4 (30-January 2012) 2N2906 2N2907 2N2906A 2N2907A PNP
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OCR Scan
N2907A N2907 2907 pnp transistor transistor 2907 2906 N 2906

transistor 2N2905

Abstract: 2N2906 equivalent 2N2905 2N2907 GENERAL PURPOSE AMPLIFIERS AND SWITCHES DESCRIPTION The 2N2905 and 2N2907 are silicon planar epitaxial PNP transistors in Jedec TO-39 (for 2N2905) and in Jedec TO-18 (for 2N2907 , . 2N2905 approved to CECC 50002-102, 2N2907 approved to CECC 50002-103 available on request. TO-18 TO , 2N2907 at T case 25 o C for 2N2905 for 2N2907 St orage Temperature Max. Operating Junction Temperature November 1997 -65 to 200 o C 200 o C 1/5 2N2905/2N2907 THERMAL DATA T
STMicroelectronics
Original
2N2904 2N2904-2N2905-2N2906-2N2907 2N2906 equivalent equivalent 2n2906 N2904 2N290 2N2904/2N2905 2N2906/2N2907

951 a05

Abstract: 2907 ST 2N2907 / 2N2907A PNP Silicon Epitaxial Planar Transistor for switching and AF amplifier , . 0.19g Absolute Maximum Ratings (Ta = 25 OC) Value Parameter Symbol Unit ST 2N2907 ST 2N2907A , 2N2907 / 2N2907A Characteristics at Ta = 25 OC Parameter Symbol Min. Max. Unit ST 2N2907 hFE 35 - - ST 2N2907A hFE 75 - - ST 2N2907 hFE 50 - - ST 2N2907A hFE 100 - - ST 2N2907 hFE 75 - - ST 2N2907A hFE 100 - -
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OCR Scan
Q62702-F408 Q62702-S170 951 a05 TD-10 103MA s170

2904

Abstract: 2907 Voltage - V cE(sat) = °-4 V dc (M ax) (5. I c = 150 m A d c · 2N2904, A thru 2N2907, A Com plem ent to N , 2N2907, A M A X I M U M R A T IN G S R ating Collector-Emitter Voltage Collector-Base Voltage , 600 2N 2904.A 2N2906.A 2N3485,A 2N 2905.A 2N2907.A 2N3486,A Total Device Dissipation @ TA = 25 , 400 2.28 400 2.28 mW mW/°C A -Su ffix 60 Unit V dc V dc Vdc m A dc 2N2904, A thru 2N2907, A , 2N2904, 2N2906, 2N3485 2N2905, 2N2907. 2N 3486 2N 2904A, 2N2906A, 2 N 3 48 5 A 2 N 2905A, 2N2907A, 2 N 3
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OCR Scan
2904
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