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Part Manufacturer Description Datasheet BUY
2N2907AUA Microsemi Corporation Small Signal Bipolar Transistor, 0.6A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, CERAMIC PACKAGE-4 visit Digikey Buy
2N2907AUB Microsemi Corporation Small Signal Bipolar Transistor, 0.6A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, HERMETIC SEALED, CERAMIC, CERSOT-3 visit Digikey Buy
2N2907AL Microsemi Corporation Small Signal Bipolar Transistor, 0.6A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-206AA, SIMILAR TO TO-18, 3 PIN visit Digikey Buy
2N2907AUB TT Electronics OPTEK Technology Small Signal Bipolar Transistor, 0.6A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon visit Digikey Buy
2N2907AUA TT Electronics OPTEK Technology Small Signal Bipolar Transistor, 0.6A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon visit Digikey Buy
2N2907A Central Semiconductor Corp Small Signal Bipolar Transistor, 0.6A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-18 visit Digikey Buy

2N2907 PNP Transistor to 92

Catalog Datasheet MFG & Type PDF Document Tags

2N2907 PNP Transistor to 92

Abstract: 2N2907A plastic ST 2N2907 / 2N2907A PNP Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into one group according to its DC current gain. As complementary type the NPN transistor ST 2N2222 and ST 2N2222A are recommended. On special request, these transistors can be manufactured in different pin configurations. TO-92 Plastic Package Weight approx. 0.19g Absolute Maximum Ratings (Ta = 25 OC) Parameter Symbol Value ST 2N2907 ST 2N2907A 60
Semtech Electronics
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2N2907 PNP Transistor to 92 2N2907A plastic 2N2907 NPN Transistor 2N2907A TO-92 2N2907 plastic 2N2907 TRANSISTOR

2N2907 PNP Transistor to 92

Abstract: 2N2907 . PINNING PIN 1 2 3 emitter base collector PH2907; PH2907A DESCRIPTION DESCRIPTION PNP switching transistor in a TO-92; SOT54 plastic package. NPN complements: PH2222 and PH2222A. QUICK REFERENCE DATA , Philips Semiconductors Product specification PNP switching transistors FEATURES · High , PNP switching transistors LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC , Tamb - 25 C C -6 5 -6 5 °C THERMAL CHARACTERISTICS SYMBOL ^th j-a Note 1. Transistor mounted
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2N2907 TO-92

2N2907 PNP Transistor to 92

Abstract: 2N2907 plastic ST 2N2907 / 2N2907A PNP Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into one group according to its DC current gain. As complementary type the NPN transistor ST 2N2222 and ST 2N2222A are recommended. On special request, these transistors can be manufactured in different pin configurations. TO-92 Plastic Package Weight approx. 0.19g Absolute Maximum Ratings (Ta = 25 OC) Value Parameter Symbol Unit ST 2N2907 ST 2N2907A
Semtech Electronics
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2N2907 plastic package ST TRANSISTOR 2N2907 2n2907 to92 2N2222A plastic package 2n2222a plastic 2n2907 TRANSISTOR PNP

2N2907 PNP Transistor to 92

Abstract: 2N2907 TO-92 amplification. DESCRIPTION PNP switching transistor in a TO-92; SOT54 plastic package. NPN complements: PH2222 , , halfpage 2 3 3 2 1 MAM281 Fig.1 Simplified outline (TO-92; SOT54) and symbol. QUICK , irregularities. OUTLINE VERSION SOT54 REFERENCES IEC JEDEC TO-92 EIAJ SC-43 EUROPEAN PROJECTION ISSUE DATE , DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 PH2907; PH2907A PNP switching , 1997 Jun 02 Philips Semiconductors Product specification PNP switching transistors FEATURES
Philips Semiconductors
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SCA54

2907 TRANSISTOR PNP

Abstract: 2907a 2N2907 / 2N2907A PNP Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into one group according to its DC current gain. As complementary type the NPN transistor ST 2222 and ST 2222A are recommended. On special request, these transistors can be manufactured in different pin configurations. TO-92 Plastic Package Weight approx. 0.19g , Tj 150 O Storage Temperature Range TS -55 to +150 O G S P FORM A IS AVAILABLE
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2907 TRANSISTOR PNP 2907a 2907a TRANSISTOR PNP 100MH

2907 TRANSISTOR PNP

Abstract: 2907a TRANSISTOR PNP ST 2N2907 / 2N2907A PNP Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into one group according to its DC current gain. As complementary type the NPN transistor ST 2222 and ST 2222A are recommended. On special request, these transistors can be manufactured in different pin configurations. TO-92 Plastic Package Weight approx. 0.19g , Tj 150 O Storage Temperature Range TS -55 to +150 O 40 V 60 V C C
Semtech Electronics
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transistor 2222a npn 2907A 2907a transistor transistor 2907 2907 ST 2222

2907 TRANSISTOR PNP

Abstract: 2907A ST 2N2907 / 2N2907A PNP Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into one group according to its DC current gain. As complementary type the NPN transistor ST 2222 and ST 2222A are recommended. On special request, these transistors can be manufactured in different pin configurations. TO-92 Plastic Package Weight approx. 0.19g , Tj 150 O Storage Temperature Range TS -55 to +150 O 40 V 60 V C C
Semtech Electronics
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st 2222A 2907 pnp transistor ST transistor 2907 transistor st2222A 2222A transistor

TZ554

Abstract: 2n2907 pnp bipolar transistor devices provide complements to Series TPQ quad transistor consisting of 1, 2, 3, or 4 discrete Darlington , transistor arrays consisting of four independent 'â¡U-tT' 8 transistors. Shown are eight NPN types, five PNP , -0.40 â'" -1.3 -150 - 1.60 â'" -2.6 - 300 8 200 â'" - 50 â'" 2N2907 TPQ2907A 2 PNP -60 -60 -5 -50 -30 , lB2 = = 15 mA SERIES TZ TRANSISTORS â'¢ Small-signal TO-92 plastic transistors. In-house type , % FIGURE 1 3WG.N0 A-10.780A FIGURE 2 nw6.N0. .4-10,/81A FIGURE 3 SERIES TPQ QUAD TRANSISTOR ARRAYS â
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TZ552 TZ554 2n2907 pnp bipolar transistor 2N4258 TZ554 transistor TZ-81 TPP1000 TPP2000 TPP3000 TPP4000 TZ551

2N2222A TO-92

Abstract: 2N2222 - to-92 2N2222 / 2N2222A NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into one group according to its DC current gain. As complementary type the PNP transistor ST 2N2907 and ST 2N2907A are recommended. On special request, these transistors can be manufactured in different pin configurations. TO-92 Plastic Package Weight approx , to +150 O G S P FORM A IS AVAILABLE C C 2N2222 / 2N2222A Characteristics at Tamb=25 OC
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2N2222A TO-92 2N2222 - to-92 transistor 2n2222a to-92 2N2222 NPN Transistor to 92 2n2222a to 92 2N2222 transistor
Abstract: SEMICONDUCTOR TECHNICAL DATA GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. B KTN2907/A EPITAXIAL PLANAR PNP TRANSISTOR C : ICEX=-50nA(Max.) ; VCE=-30V, VEB=-0.5V. ·Low Saturation Voltage : VCE(sat)=-0.4V(Max.) ; IC=-150mA, IB=-15mA. K D E G A FEATURES ·Low Leakage Current N ·Complementary to the KTN2222/2222A. ·KTN2907/2907A Electrically Similar to 2N2907/2907A. H F F L , . BASE 3. COLLECTOR TO-92 1999. 4. 9 Revision No : 1 1/4 KTN2907/A ELECTRICAL KEC
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2N2907/2907A KTN2907 KTN2907A

2N2222A zetex

Abstract: MAX715CNG collector of the external PNP transistor is sensed at S1-S4 to maintain regulation. When an output is turned off, the base-drive output rises to Vcc (or BT whichever is higher), turning off the pass transistor , . Note 4: A Motorola 2N2907A PNP was used as the output transistor in Figure 1. Note 5: RC oscillator is , ZTX749 OUTPUT TRANSISTOR V4 LOAD-TRANSIENT/DROPOUT RESPONSE TIME200ns/div OmA TO 100mA LOAD VCC = +9V, VouT = -5V 2N2907 OUTPUT TRANSISTOR â"H Sì XI yVI 4-39 Powered by ICminer.com Electronic-Library
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MAX714/715/716 MAX715 MAX714 MAX716CWI MAX716EWI MAX716EVKIT 2N2222A zetex MAX715CNG motorola b6n MAX715CWG MAX716 MAX716CPI

2n2222

Abstract: 2N2222A plastic package ST 2N2222 / 2N2222A NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into one group according to its DC current gain. As complementary type the PNP transistor ST 2N2907 and ST 2N2907A are recommended. On special request, these transistors can be manufactured in different pin configurations. TO-92 Plastic Package Weight approx , to +150 O C C G S P FORM A IS AVAILABLE SEMTECH ELECTRONICS LTD. ® (Subsidiary of
Semtech Electronics
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2N2222 hfe OF transistor 2N2222 to-92 2n2222 to92 2n2222 npn switching transistor ST 2n2222

KTN2907A

Abstract: 2907a SEMICONDUCTOR KTN2907/A TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. B C FEATURES A Low Leakage Current : ICEX=-50nA(Max.) ; VCE=-30V, VEB=-0.5V. Low Saturation Voltage N E K : VCE(sat)=-0.4V(Max.) ; IC=-150mA, IB=-15mA. G D J Complementary to the KTN2222/2222A. KTN2907/2907A Electrically Similar to 2N2907/2907A , TO-92 V -55 150 Collector Current Collector Power Dissipation (Ta=25 ) Junction
KEC
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2907A similar KTN2222 KTN29

2n2222

Abstract: pin configuration transistor 2N2222 ST 2N2222 / 2N2222A NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into one group according to its DC current gain. As complementary type the PNP transistor ST 2N2907 and ST 2N2907A are recommended. On special request, these transistors can be manufactured in different pin configurations. TO-92 Plastic Package Weight approx , to +150 O C C G S P FORM A IS AVAILABLE SEMTECH ELECTRONICS LTD. (Subsidiary of Semtech
Semtech Electronics
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pin configuration transistor 2N2222 Transistor 2N2222 NPN TO92 OF transistor 2N2222 Datasheet 2N2222 transistor transistor 2N2222

2N2222A TO-92

Abstract: 2N2222A plastic ST 2N2222 / 2N2222A NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into one group according to its DC current gain. As complementary type the PNP transistor ST 2N2907 and ST 2N2907A are recommended. On special request, these transistors can be manufactured in different pin configurations. TO-92 Plastic Package Weight approx , to +150 O C C SEMTECH ELECTRONICS LTD. (Subsidiary of Semtech International Holdings
Semtech Electronics
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st 2n2222a ST 2n2222 datasheet Transistor 2N2222A 2N2222A st 2n2222a transistor 2N2222 transistor datasheet

2N2222A plastic package

Abstract: 2N2222A plastic ST 2N2222 / 2N2222A NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into one group according to its DC current gain. As complementary type the PNP transistor ST 2N2907 and ST 2N2907A are recommended. On special request, these transistors can be manufactured in different pin configurations. TO-92 Plastic Package Weight approx , to +150 O C C SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings
Semtech Electronics
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NPN transistor 2n2222A plastic package of 2N2222A transistor 2n2222A plastic package power transistor 2n2222 npn 2n2222 transistor

2n2222

Abstract: 2N2222A plastic package ST 2N2222 / 2N2222A NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into one group according to its DC current gain. As complementary type the PNP transistor ST 2N2907 and ST 2N2907A are recommended. On special request, these transistors can be manufactured in different pin configurations. TO-92 Plastic Package Weight approx , to +150 O C C G S P FORM A IS AVAILABLE SEMTECH ELECTRONICS LTD. (Subsidiary of Semtech
Semtech Electronics
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Transistor 2N2222 Datasheet 2n2222 npn transistor BR 2N2222A NPN

2224B

Abstract: 016W -pin bipolar device designed to be used in conjunction with a discrete PNP power transistor to form an , a driver circuit capable of sinking up to 125mA from the base of the external PNP pass transistor , with a discrete PNP transistor to form an inexpensive ultralow dropout regulator. The device , FOR ATIO The LT1123 is designed to be used in conjunction with an external PNP transistor. The , input voltage to the circuit VBE = the maximum emitter/base voltage of the PNP pass transistor VDRIVE
Linear Technology
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MJE1123 2224B 016W transistor pnp 30V 1A 1W TRANSISTOR pnp 0.15W LT1123CST LT1123CZ 9400DY MM74C906 LT1083/4/5 25VREF LT1117
Abstract: -pin bipolar device designed to be used in conjunction with a discrete PNP power transistor to form an , a driver circuit capable of sinking up to 125mA from the base of the external PNP pass transistor , with a discrete PNP transistor to form an inexpensive ultralow dropout regulator. The device , ATIO The LT1123 is designed to be used in conjunction with an external PNP transistor. The overall , minimum input voltage to the circuit VBE = the maximum emitter/base voltage of the PNP pass transistor Linear Technology
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LT1121 LT1761 LT1763

2N2907 PNP Transistor to 92

Abstract: 2224B -pin bipolar device designed to be used in conjunction with a discrete PNP power transistor to form an , a driver circuit capable of sinking up to 125mA from the base of the external PNP pass transistor , PNP transistor to form an inexpensive ultralow dropout regulator. The device incorporates a trimmed , limiting is achieved by limiting the base drive to the external PNP pass transistor. This means that the , emitter/base voltage of the PNP pass transistor (assumed to be 0.6V) 1k 0.1W RD () 0.2W 100
Linear Technology
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pnp marking 3W 1N4148 75V 150mA Diodes 2N2907 PNP Transistor RUR67B1CB TA03
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