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2N2906AUA Microsemi Corporation Small Signal Bipolar Transistor, 0.6A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, CERAMIC PACKAGE-4 visit Digikey Buy
2N2906AL Microsemi Corporation Small Signal Bipolar Transistor, 0.6A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-206AA, SIMILAR TO TO-18, 3 PIN visit Digikey Buy
2N2906A Microsemi Corporation Small Signal Bipolar Transistor, 0.6A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-206AA visit Digikey Buy
2N2906AUB Microsemi Corporation Small Signal Bipolar Transistor, 0.6A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, HERMETIC SEALED, CERAMIC, CERSOT-3 visit Digikey Buy
JANTXV2N2906AUA Microsemi Corporation Small Signal Bipolar Transistor, 0.6A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon visit Digikey Buy
JANTX2N2906AUA Microsemi Corporation Small Signal Bipolar Transistor, 0.6A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon visit Digikey Buy

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2N2906A Datasheet

Part Manufacturer Description PDF Type
2N2906A Boca Semiconductor PNP SILICON PLANAR SWITCHING TRANSISTORS - Pol=PNP / Pkg=TO18 / Vceo=60 / Ic=0.6 / Hfe=40-120 / fT(Hz)=200M / Pwr(W)=0.4 Original
2N2906A Microsemi PNP Small Signal Silicon Transistor Original
2N2906A Microsemi Transistors (BJT) - Single, Discrete Semiconductor Products, TRANS PNP 60V 600MA TO-18 Original
2N2906A On Semiconductor Bipolar Transistor, General Purpose Transistors PNP Silicon Annular Hermetic Transistors - Pol=PNP / Pkg=TO18 / Vceo=60 / Ic=0.6 / Hfe=40-120 / fT(Hz)=200M / Pwr(W)=0.4 Original
2N2906A Philips Semiconductors PNP switching transistors - Pol=PNP / Pkg=TO18 / Vceo=60 / Ic=0.6 / Hfe=40-120 / fT(Hz)=200M / Pwr(W)=0.4 Original
2N2906A Semelab Bipolar PNP Device in a Hermetically Sealed TO18 Metal Package - Pol=PNP / Pkg=TO18 / Vceo=60 / Ic=0.6 / Hfe=40-120 / fT(Hz)=200M / Pwr(W)=0.4 Original
2N2906A Semico Chip Type 2C2904A Geometry 0600 Polarity PNP - Pol=PNP / Pkg=TO18 / Vceo=60 / Ic=0.6 / Hfe=40-120 / fT(Hz)=200M / Pwr(W)=0.4 Original
2N2906A Central Semiconductor PNP METAL CAN Transistors Scan
2N2906A Central Semiconductor BJT, PNP, Silicon Epitaxial Transistor, IC 0.6A - Pol=PNP / Pkg=TO18 / Vceo=60 / Ic=0.6 / Hfe=40-120 / fT(Hz)=200M / Pwr(W)=0.4 Scan
2N2906A Continental Device India Semiconductor Device Data Book 1996 Scan
2N2906A Continental Device India Silicon Planar Switching Transistor Scan
2N2906A Crimson Semiconductor Transistor Selection Guide Scan
2N2906A Dionics PNP Si High Current Transistor Scan
2N2906A Fairchild Semiconductor PNP small signal general purpose amplifier & switch . - Pol=PNP / Pkg=TO18 / Vceo=60 / Ic=0.6 / Hfe=40-120 / fT(Hz)=200M / Pwr(W)=0.4 Scan
2N2906A Fairchild Semiconductor Misc. Data Book Scans 1975/76 Scan
2N2906A Ferranti Semiconductors Metal Can Transistors (Short Form) Scan
2N2906A Ferranti Semiconductors Shortform Data Book 1971 Scan
2N2906A Ferranti Semiconductors Quick Reference Guide 1985 Scan
2N2906A General Diode Transistor Selection Guide Scan
2N2906A Infineon Technologies TRANS GP BJT PNP 60V 0.6A 2TO-18 Scan
Showing first 20 results.

2N2906A

Catalog Datasheet MFG & Type PDF Document Tags

2n2907

Abstract: 2N2907A SEMICONDUCTOR! TECHNICAL d a ta 2N2906 v! 2N2906A. 2N2907 2N2907A PNP Silicon Small-Signal , q b * 50 Vdc) `CBO 2N2906 2N2907 2N2906A 2N2907A 2N2906. 2N2907 2N2906A. 2N2907A `EBO _ Symbol Min Max Unit V , IN G S 2N2906 2N2907 40 60 5.0 600 2N2906A 2N2907A 60 CRYSTALOMCS 2805 Veteran Highwav Suite , GainO) dC - 0.1 mAdc, Vq e = 10 Vdc) hFE 2N2906 2N2907 2N2906A 2N2907A 2N2906 2N2907 2N2906A 2N2907A
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OCR Scan
2N2906JAN 2N2907JAN J 2N2907

2N2907A

Abstract: TECHNICAL DATA 2N2906A JAN, JTX, JTXV 2N2906AUA JAN, JTX, JTXV 2N2906AUB JAN, JTX, JTXV 2N2907A , 2N2906A. UA, UB 2N2907A, UA, UB 2N2906A. UA, UB 2N2907A, UA, UB 2N2906A. UA, UB 2N2907A, UA, UB 2N2906A. UA, UB 2N2907A, UA, UB 2N2906A. UA, UB 2N2907A, UA, UB 40 75 40 100 40 100 40 100 40 50 175 450 , TO-18 (TO-206AA) 4 PIN 2N2906AUA, 2N2907AUA TJ, Tstg Derate linearly 2.28 mW/0C for TA > +250C. , linearly 6.6mW/0C for TC > +250C. Characteristics Symbol 3 PIN 2N2906AUB, 2N2907AUB Min. Max. Unit
New England Semiconductor
Original
MIL-PRF-19500/291

2N2907A

Abstract: 2N2907A surface mount 2N2906A 2N2906AL 2N2906AUA 2N2906AUB Qualified Level JAN JANTX JANTXV JANS 2N2907A 2N2907AL , -206AA) 4 PIN* 2N2906AUA, 2N2907AUA 3 PIN* 2N2906AUB, 2N2907AUB *See appendix A for package outline , 10 mAdc, VCE = 10 Vdc IC = 150 mAdc, VCE = 10 Vdc IC = 500 mAdc, VCE = 10 Vdc 2N2906A. UA, UB 2N2907A, UA, UB 2N2906A. UA, UB 2N2907A, UA, UB 2N2906A. UA, UB 2N2907A, UA, UB 2N2906A. UA, UB 2N2907A, UA, UB 2N2906A. UA, UB 2N2907A, UA, UB Collector-Emitter Saturation Voltage IC = 150 mAdc
Microsemi
Original
2N2907A surface mount transistor ub t JANS2N2907A 2N2907A PNP Transistor 2N2907A JANTX equivalent 2N2907A
Abstract: 2N2906A Spec Sheets Details Diodes, Transistors, Thyristors, Triacs, Di. class="hl">2N2906A HOME | CATALOG | CART |EXPRESS CHECKOUT | PARTS WATCH | NEW , Category » Transistors Buy 2N2906A at our online store! 2N2906A Availability Special Offers: FREE UPS Ground Shipping on Orders above $150.00 Lanuage Translator: 2N2906A Information Did you , Products Search for Parts Request a Quote Test Houses 2N2906A Specifications Military/High-Rel : N V American Microsemiconductor
Original
STV3208 LM3909N LM3909 1N4510 2N1711

2N2906

Abstract: 2N2906A 2N290Ã" â  2N2906A PN 2906 â  PN2906A PNP SILICON GENERAL PURPOSE AMPLIFIERS AND SWITCHES I THE 2N2906, 2N2906A, PN2906, PN2906A ARE PNP SILICON PLANAR EPITAXIAL TRANSISTORS FOR GENERAL PURPOSE , , 2N2221A, PN2221 , PN2221A RESPECTIVELY. THE 2N2906, 2N2906A ARE PACKED IN TO-18. THE FN2906, PN2906A ARE PACKED IN TO-92A. CASE TO-18 CASE TO-92A 0 CBE 2N2906 2N2906A EBC PN2906 PN2906A ABSOLUTS MAXIMUM RATINGS 2N2906 2N2906A PN2906 PN290ÇA Collector-Base Vcsltage -VCBO 60V 60V 60V 60V Collector-Emitter Voltage
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OCR Scan
2N2221 COMPLEMEN171ARY OMPLEMEN171ARY

2n2906

Abstract: PN2221  2N2906 â  2N2906A PN 2906 â  PN2906A pnp silicon general purpose amplifiers and switches J THE 2n2906, 2n2906a, pn2906, pn2906a are pnp SILICON planar epitaxial transistors FOR GENERAL , , 2N2221A, PN2221, pn2221a respectively. THE 2W2906, 2N2906A ARE packed in to-18. THE PN2906, pn2906a ARE packed in to-92a. case to-18 cbe 2n290ë 2n2906a case to-92a 0 ebc pn2906 pn2906a ABSOLUTE MAXIMUM RATINGS 2n2906 2n2906a pn2906 pn2906a Collector-Base Veltage -vcbo 60v 60v 60v 60v
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OCR Scan
2IT2906
Abstract: 2N 2906 PN 2906 M â'¢ 2N2906A â  PN2906A PNP SILICON GENERAL PURPOSE AMPLIFIERS AND SWITCHES 1 CASE TO-18 THE 2TT2906, 2N2906A, PN2906, PN2906A ARE PNP SILICON PLANAR EPITAXIAL , TO THE NPN TYPE 2N2221, 2N2221A, PN2221 , PN2221A RESPECTIVELY. THE 2N2906, 2N2906A ARE PACKED IN , 2N2906 2N2906A 2N2906 ABSOLUTE MAXIMUM RATINGS PN2906 PN2906A 2N2906A PN2906 PN2906A , (TA~25°C PARAMETER Collector-Base Breakdown Voltage unless otherwise noted) 2N2906A 2N2906 -
OCR Scan
BOX69477 FN2906A

2N2907

Abstract: 2n2907 TRANSISTOR PNP 438 97 2N2906A 2N2907A 2N2906 2N2906A 2N2907 2N2907A UNITS 60 60 V 40 60 V 5.0 5.0 V 600 , ELECTRICAL CHARACTERISTICS (Continued) 2N2906 2N2907 2N2906A 2N2907A SYMBOL TEST CONDITIONS MIN MAX MIN MAX hFE VCE=10V, Iq=100|jA (2N2906, 2N2907 Only) 20 35 hFE VCE=10V, Iq=100|jA (2N2906A, 2N2907A Only) 40 75 hFE VCE=10V, lc=1.0mA (2N2906, 2N2907 Only) 25 50 hFE VCE=10V, lc=1.0mA (2N2906A, 2N2907A Only) 40 100 hFE VCE=10V, lc=10mA (2N2906, 2N2907 Only) 35 75 hFE VCE=10V, lc=10mA (2N2906A
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OCR Scan
2n2907 TRANSISTOR PNP 2N2907 TRANSISTOR 2N2907 a TRANSISTOR LG 631 IC 2N2907 PNP Transistor J 2N2906 100MH JEDECTO-18

2N2906

Abstract: 2N2906A N AMER PHILIPS/DISCRETE b'ìE ]> m bb5B^31 DGEÃlSS 4T0 â  ZNZyUö 2N2906A IAPX A SILICON , lector-base voltage (open emitter) ~vCBO max. 60 V Collector-emitter voltage (open base) 2N2906 2N2906A , Material Copyrighted By Its Respective Manufacturer N AMER PHILIPS/DISCRETE 2N2906 2N2906A h^E T , ) â'"IC < 100 mA 2N2906 -vCEO max. 40 V 2N2906A ~vCEO max. 60 V Emitter-base voltage (open collector , CHARACTERISTICS T"amb = 25 °C unless otherwise specified LTE D â  bb53^31 DÃSÃ1S7 273 I 2N2906 2N2906A A
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OCR Scan

2N2907

Abstract: 2n2907a 2N2906 2N2907 2N2906A 2N2907A w w w. c e n t r a l s e m i . c o m PNP SILICON TRANSISTOR , -18 CASE 2N2906 2N2907 60 40 2N2906A 2N2907A 60 60 MAXIMUM RATINGS: (TA=25°C) Collector-Base Voltage , =15mA 100 2N2906A 2N2907A MIN MAX 10 10 50 60 60 5.0 0.4 1.6 1.3 2.6 200 8.0 30 45 100 UNITS nA A nA V V V V V V V MHz pF pF ns ns R4 (30-January 2012) 2N2906 2N2907 2N2906A 2N2907A PNP , hFE hFE TEST CONDITIONS VCE=10V, IC=0.1mA (2N2906, 2N2907) VCE=10V, IC=0.1mA (2N2906A, 2N2907A) VCE
Central Semiconductor
Original
transistor 2N2907

2N2906

Abstract: 2N2222A 0612 DISCRETE SEMICONDUCTORS DATA SHEET M3D125 2N2906; 2N2906A PNP switching transistors , ; 2N2906A FEATURES PINNING · High current (max. 600 mA) PIN · Low voltage (max. 60 V). , . MAX. -60 UNIT open base V 2N2906 - -40 V 2N2906A - -60 V - , Product specification PNP switching transistors 2N2906; 2N2906A LIMITING VALUES In accordance , voltage VCEO - - VCBO -60 V - -5 V open base 2N2906 2N2906A VEBO
Philips Semiconductors
Original
2N2222 2N2222A 2N2222A 0612 transistor 2N2222 PHILIPS transistor 2n2906 MAM263 SCA54

2N2907A

Abstract: 2N2906A 2N2906A, 2N2907A PNP Silicon Epitaxial Planar Transistors with high cutoff frequency, for high , , saturated operation Fig. 3: Test circuit for non-satured operation 152 2N2906A, 2N2907A Characteristics , 2N2906A hFE 40 - - - 2N2907A hFE 75 - - - at -VCE = 10 V, -lc = 1 mA 2N2906A hFE 40 - - - 2N2907A hFE 100 - - - at -VCE = 10 V, -lc = 10 mA 2N2906A hps 40 - - 2N2907A hFE 100 - - at -VCE = 10 V, -lc = 150 mA 2N2906A hFE 40 - "20 - 2N2907A hpE 100 - 300 - at -VCE = 10 V, -lc = 0.5 A 2N2906A hFE 40
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OCR Scan

2N2906A

Abstract: 2N2221 I THE 2N2Q06, 2N2906A, PN2906, PN2906A ARE PNP SILICON PLANAR EPITAXIAL TRANSISTORS FOR GENERAL , 2N2221, 2N2221A, PN2221, PN2221A RESPECTIVELY. THE 2N2906, 2N2906A ARE PACKED IN TO-18. THE PN2906, PN2906A ARE PACKED IN TO-92A. CASE TO-18 CBE 2N2906 2N2906A CASE TO-92A EBC FN2906 PN2906A ABSOLUTE MAXIMUM RATINGS 2N2906 2N2906A PN2906 PN2906A Collector-Base Voltage -VCBO 60V 60V 4 60V 60V , )* _I 0.4 1.6 2N2906A PN2906A MIN MAX 60 60 5 10 10 50 50 0.4 1.6 UNIT V V V nA uA nA nA V V TEST
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OCR Scan

2N2906

Abstract: complements: 2N2222 and 2N2222A. PINNING PIN 1 2 3 emitter base 2N2906; 2N2906A DESCRIPTION collector , collector-emitter voltage 2N2906 2N2906A collector current (DC) total power dissipation DC current gain transition , System (IEC 134). SYMBOL V cB O V CEO 2N2906; 2N2906A PARAMETER collector-base voltage collector-emitter voltage 2N2906 2N2906A emitter-base voltage collector current (DC) peak collector current peak , otherwise specified SYMBOL ICBO PARAMETER collector cut-off current 2N2906 collector cut-off current 2N2906A
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OCR Scan
MG0624
Abstract: N AMER PHILIPS/DISCRETE bbSB'lBl DDEfilBS 4T0 â  IAPX b'JE T > A ZN ZyU b 2N2906A , â' v CBO Collector-base voltage (open emitter) 2N2906 2N2906A Collector-emitter voltage , '¬ Qualification approved to CECC 50 002-299 October 1982 755 N AMER PHILIPS/DISCRETE 2N2906 2N2906A , bbSB'lBl 002A127 273 I IAPX 2N2906 2N2906A D Silicon planar epitaxial transistors , 2N2906 2N2906A -'C B O < 20 10 nA IE = 0; - V CB = 50 V; Tamb = 150 °C - â'˜CBO -
OCR Scan
7Z69420

2N906A

Abstract: transistor equivalent 0107 NA N/A N/A 2N2906A, L, 2N2907A, L 2N2906AUA, 2N2907AUA 2N2906AUB, 2N2907AUB 2N2906AUBC , , TRANSISTOR, PNP, SILICON, SWITCHING, TYPES 2N2906A, 2N2906AL, 2N2907A, 2N2907AL, 2N2906AUA, 2N2907AUA, 2N2906AUB, 2N2906AUBC, 2N2907AUB, AND 2N2907AUBC, JAN, JANTX, JANTXV, JANJ, JANS, JANSM, JANSD, JANSP , , TRANSISTOR, PNP, SILICON, SWITCHING, TYPES 2N2906A, 2N2906AL, 2N2907A, 2N2907AL, 2N2906AUA, * Comments , . Temperature-power derating for 2N2906A, 2N2906AL, 2N2907A and 2N2907AL (RJA) leads .125 inch (3.18 mm) PCB (TO-18).
DEPARTMENT OF DEFENSE
Original
JANHCB2N2907A 2N906A transistor equivalent 0107 NA 2N906 2N2907A die UBC-100 MIL-PRF-19500/291R MIL-PRF-19500 JANHCB2N2906A JANHCD2N2906A JANHCD2N2907A

2N2907A

Abstract: MIL-PRF-19500/291 TRANSISTOR Qualified per MIL-PRF-19500/291 DEVICES LEVELS 2N2906A 2N2906AL 2N2906AUA 2N2906AUB 2N2906AUBC 2N2907A 2N2907AL 2N2907AUA 2N2907AUB 2N2907AUBC JANSM ­ 3K Rads (Si) JANSD ­ 10K Rads , Cutoff Current VCE = 50Vdc T4-LDS-0055 Rev. 3 (080857) 3 PIN 2N2906AUB, 2N2907AUB 2N2906AUBC , PT Operating & Storage Junction Temperature Range (1) TO-18 (TO-206AA) 2N2906A, 2N2907A , 1. See MIL-PRF-19500/291 for derating curves. 2N2906AUA, 2N2907AUA ELECTRICAL CHARACTERISTICS
Microsemi
Original
MICROSEMI 2N2907A 10VDC

2N2907A

Abstract: 2N2906AUBC per MIL-PRF-19500/291 DEVICES LEVELS 2N2906A 2N2906AL 2N2906AUA 2N2906AUB 2N2906AUBC , 2N2906AUA, 2N2907AUA Adc 3 PIN 2N2906AUB, 2N2907AUB 2N2906AUBC, 2N2907AUBC (UBC = Ceramic Lid , -65 to +200 °C 2N2906A, 2N2907A Operating & Storage Junction Temperature Range Note , . Max. Unit (4) Forward-Current Transfer Ratio IC = 0.1mAdc, VCE = 10Vdc 2N2906A, L, UA, UB, UBC 2N2907A, L, UA, UB, UBC 40 75 IC = 1.0mAdc, VCE = 10Vdc 2N2906A, L, UA, UB, UBC
Microsemi
Original
T4-LDS-0059

2N2906AUBC

Abstract: equivalent 2N2907A TRANSISTOR Qualified per MIL-PRF-19500/291 DEVICES LEVELS 2N2906A 2N2906AL 2N2906AUA 2N2906AUB 2N2906AUBC 2N2907A 2N2907AL 2N2907AUA 2N2907AUB 2N2907AUBC JANSM ­ 3K Rads (Si) JANSD ­ 10K Rads , Cutoff Current VCE = 50Vdc T4-LDS-0055 Rev. 4 (100247) 3 PIN 2N2906AUB, 2N2907AUB 2N2906AUBC , PT Operating & Storage Junction Temperature Range (1) TO-18 (TO-206AA) 2N2906A, 2N2907A , 1. See MIL-PRF-19500/291 for derating curves. 2N2906AUA, 2N2907AUA ELECTRICAL CHARACTERISTICS
Microsemi
Original
IC tl 495 Transistor CD -120 325 MMC

motorola transistor 2N2907A

Abstract: 2N2905 MOTOROLA '" Continuous ic 600 mAdc 2N2904,A 2N2905.A 2N2906.A 2N2907,A 2N3485.A 2N3486.A Total Device Dissipation , '" 2N2905, 2N2907, 2N3486 35 â'" â'" 2N2904A, 2N2906A, 2N3485A 40 â'" â'" 2N2905A, 2N2907A, 2N3486A , â'" â'" 2N2904A, 2N2906A, 2N3485A 40 â'" â'" 2N2905A, 2N2907A, 2N3486A 100 â'" â'" (Ic = 10 , , 2N2906A, 2N3485A 40 â'" â'" 2N2905A, 2N2907A, 2N3486A 100 â'" â'" (IC = 150 mAdc, VCe = 10 Vdc)(1 ) 2N2904A, 2N2906A, 2N3485A 40 â'" 120 2N2905A, 2N2907A, 2N3486A 100 â'" 300 (Ic = 500 mAdc, Vce = 10
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OCR Scan
motorola transistor 2N2907A 2N2905 MOTOROLA MOTOROLA 2N2905A 2N2905A MOTOROLA 2n2907 Motorola TRANSISTOR 2n2904 2N2904/2905 2N2906/2907 2N3485/3486 N3486
Abstract: , SILICON, SWITCHING, TYPES 2N2906A, 2N2906AL, 2N2907A, 2N2907AL, 2N2906AUA, 2N2907AUA, 2N2906AUB , ) (4) PT PT PT TA = +25°C (1) (2) W 2N2906A, L, 2N2907A, L 2N2906AUA, 2N2907AUA , hFE5 (1) IC = 500 mA dc 2N2906A, 2N2907A, 2N2906A 2N2907A 2N2906A 2N2907A 2N2906A 2N2907A 2N2906A , 100 40 50 Max 175 450 120 300 Types 2N2906A, 2N2907A, L, UA, UB, UBC, UBN, UBCN Limit Min Max Types Limits 2N2906A, 2N2907A, L, UA, UB, UBC UBN, UBCN Min Max |hfe Microsemi
Original
MIL-PRF-19500/291U MIL-PRF-19500/291T 2N2906AUBN 2N2906AUBCN 2N2907AUBN 2N2907AUBCN

2905a

Abstract: ic 2905a (sim. -.o TO-39) (sim. to TO-18) 269 7/76 2N 2904A 2N 2905A 2N2906A 2N 2907A THERMAL DATA 2N
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OCR Scan
2905a ic 2905a 2904a 2907A 2907 a12907

2905a

Abstract: ic 2905a DISCRETE SEMICONDUCTORS DATA SHEET M3D125 2N2906; 2N2906A PNP switching transistors , ; 2N2906A FEATURES PINNING · High current (max. 600 mA) PIN · Low voltage (max. 60 V). , . MAX. -60 UNIT open base V 2N2906 - -40 V 2N2906A - -60 V - , Product specification PNP switching transistors 2N2906; 2N2906A LIMITING VALUES In accordance , voltage VCEO - - VCBO -60 V - -5 V open base 2N2906 2N2906A VEBO
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OCR Scan
A1290 2906A 2n 2905a
Abstract: 2N 2906 PN 2906 M â'¢ 2N2906A â  PN2906A PNP SILICON GENERAL PURPOSE AMPLIFIERS AND SWITCHES 1 CASE TO-18 THE 2TT2906, 2N2906A, PN2906, PN2906A ARE PNP SILICON PLANAR EPITAXIAL , TO THE NPN TYPE 2N2221, 2N2221A, PN2221 , PN2221A RESPECTIVELY. THE 2N2906, 2N2906A ARE PACKED IN , 2N2906 2N2906A 2N2906 ABSOLUTE MAXIMUM RATINGS PN2906 PN2906A 2N2906A PN2906 PN2906A , (TA~25°C PARAMETER Collector-Base Breakdown Voltage unless otherwise noted) 2N2906A 2N2906 DEPARTMENT OF DEFENSE
Original
MIL-PRF-19500/291P

JANHCB2N2907A

Abstract: JANHCD2N2907A 438 97 2N2906A 2N2907A 2N2906 2N2906A 2N2907 2N2907A UNITS 60 60 V 40 60 V 5.0 5.0 V 600 , ELECTRICAL CHARACTERISTICS (Continued) 2N2906 2N2907 2N2906A 2N2907A SYMBOL TEST CONDITIONS MIN MAX MIN MAX hFE VCE=10V, Iq=100|jA (2N2906, 2N2907 Only) 20 35 hFE VCE=10V, Iq=100|jA (2N2906A, 2N2907A Only) 40 75 hFE VCE=10V, lc=1.0mA (2N2906, 2N2907 Only) 25 50 hFE VCE=10V, lc=1.0mA (2N2906A, 2N2907A Only) 40 100 hFE VCE=10V, lc=10mA (2N2906, 2N2907 Only) 35 75 hFE VCE=10V, lc=10mA (2N2906A
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Original
215 e3 2N2906A-2N2907A JANTXV 2N2907AUB MIL-PRF-19500/291K MIL-PRF-19500/291J T0-18

2907

Abstract: 2N2907 TRANSISTOR Qualified per MIL-PRF-19500/291 DEVICES LEVELS 2N2906A 2N2906AL 2N2906AUA 2N2906AUB , PT Operating & Storage Junction Temperature Range (1) TO-18 (TO-206AA) 2N2906A, 2N2907A , 10Vdc 2N2906A, L, UA, UB, UBC 2N2907A, L, UA, UB, UBC 40 75 IC = 1.0mAdc, VCE = 10Vdc 2N2906A, L, UA, UB, UBC 2N2907A, L, UA, UB, UBC 40 100 IC = 10mAdc, VCE = 10Vdc 2N2906A, L, UA, UB, UBC 2N2907A, L, UA, UB, UBC IC = 150mAdc, VCE = 10Vdc 2N2906A, L, UA, UB, UBC 2N2907A, L
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OCR Scan
2IM2907 2N2908 A2907A a 2907 2907A BF of ic 2907
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