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2N2906AUA Microsemi Corporation Small Signal Bipolar Transistor, 0.6A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, CERAMIC PACKAGE-4 visit Digikey Buy
2N2906AL Microsemi Corporation Small Signal Bipolar Transistor, 0.6A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-206AA, SIMILAR TO TO-18, 3 PIN visit Digikey Buy
2N2906A Microsemi Corporation Small Signal Bipolar Transistor, 0.6A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-206AA visit Digikey Buy
2N2906AUB Microsemi Corporation Small Signal Bipolar Transistor, 0.6A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, HERMETIC SEALED, CERAMIC, CERSOT-3 visit Digikey Buy
JANTXV2N2906AUA Microsemi Corporation Small Signal Bipolar Transistor, 0.6A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon visit Digikey Buy
JANTX2N2906AUA Microsemi Corporation Small Signal Bipolar Transistor, 0.6A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon visit Digikey Buy

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2N2906 Datasheet

Part Manufacturer Description PDF Type
2N2906 Central Semiconductor PNP SILICON TRANSISTOR Original
2N2906 On Semiconductor Bipolar Transistor, General Purpose Transistors PNP Silicon Annular Hermetic Transistors - Pol=PNP / Pkg=TO18 / Vceo=40 / Ic=0.6 / Hfe=40-120 / fT(Hz)=200M / Pwr(W)=0.4 Original
2N2906 Philips Semiconductors PNP switching transistors - Pol=PNP / Pkg=TO18 / Vceo=40 / Ic=0.6 / Hfe=40-120 / fT(Hz)=200M / Pwr(W)=0.4 Original
2N2906 Semelab Bipolar PNP Device in a Hermetically Sealed TO18 Metal Package - Pol=PNP / Pkg=TO18 / Vceo=40 / Ic=0.6 / Hfe=40-120 / fT(Hz)=200M / Pwr(W)=0.4 Original
2N2906 Semico Chip Type 2C2904A Geometry 0600 Polarity PNP - Pol=PNP / Pkg=TO18 / Vceo=40 / Ic=0.6 / Hfe=40-120 / fT(Hz)=200M / Pwr(W)=0.4 Original
2N2906 STMicroelectronics GENERAL PURPOSE AMPLIFIERS AND SWITCHES Original
2N2906 Bharat Electronics Transistor Selection Guide Scan
2N2906 Central Semiconductor PNP METAL CAN Transistors Scan
2N2906 Central Semiconductor BJT, PNP, Silicon Epitaxial Transistor, IC 0.6A - Pol=PNP / Pkg=TO18 / Vceo=40 / Ic=0.6 / Hfe=40-120 / fT(Hz)=200M / Pwr(W)=0.4 Scan
2N2906 Continental Device India Semiconductor Device Data Book 1996 Scan
2N2906 Crimson Semiconductor Transistor Selection Guide Scan
2N2906 Dionics PNP Si High Current Transistor Scan
2N2906 Fairchild Semiconductor PNP small signal general purpose amplifier & switch . - Pol=PNP / Pkg=TO18 / Vceo=40 / Ic=0.6 / Hfe=40-120 / fT(Hz)=200M / Pwr(W)=0.4 Scan
2N2906 Fairchild Semiconductor Misc. Data Book Scans 1975/76 Scan
2N2906 Ferranti Semiconductors Metal Can Transistors (Short Form) Scan
2N2906 Ferranti Semiconductors Quick Reference Guide 1985 Scan
2N2906 Ferranti Semiconductors Shortform Data Book 1971 Scan
2N2906 General Diode Transistor Selection Guide Scan
2N2906 General Electric Semiconductor Data Book 1971 Scan
2N2906 Infineon Technologies TRANS GP BJT PNP 40V 0.6A 2TO-18 Scan
Showing first 20 results.

2N2906

Catalog Datasheet MFG & Type PDF Document Tags

2n2907

Abstract: 2N2907A q b * 50 Vdc) `CBO 2N2906 2N2907 2N2906A 2N2907A 2N2906. 2N2907 2N2906A. 2N2907A `EBO _ Symbol Min Max Unit V , SEMICONDUCTOR! TECHNICAL d a ta 2N2906 v! 2N2906A. 2N2907 2N2907A PNP Silicon Small-Signal , . Initial and End P oint Lim its Symbol *CBO 2N2906. 2N2907 2N2906A 2N2907A hFE 2N2906. 2N2907 , IN G S 2N2906 2N2907 40 60 5.0 600 2N2906A 2N2907A 60 CRYSTALOMCS 2805 Veteran Highwav Suite
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OCR Scan
2N2906JAN 2N2907JAN J 2N2907

2N2907

Abstract: 2n2907 TRANSISTOR PNP 438 97 2N2906A 2N2907A 2N2906 2N2906A 2N2907 2N2907A UNITS 60 60 V 40 60 V 5.0 5.0 V 600 , ELECTRICAL CHARACTERISTICS (Continued) 2N2906 2N2907 2N2906A 2N2907A SYMBOL TEST CONDITIONS MIN MAX MIN MAX hFE VCE=10V, Iq=100|jA (2N2906, 2N2907 Only) 20 35 hFE VCE=10V, Iq=100|jA (2N2906A, 2N2907A Only) 40 75 hFE VCE=10V, lc=1.0mA (2N2906, 2N2907 Only) 25 50 hFE VCE=10V, lc=1.0mA (2N2906A, 2N2907A Only) 40 100 hFE VCE=10V, lc=10mA (2N2906, 2N2907 Only) 35 75 hFE VCE=10V, lc=10mA (2N2906A
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OCR Scan
2n2907 TRANSISTOR PNP 2N2907 TRANSISTOR 2N2907 a TRANSISTOR LG 631 IC 2N2907 PNP Transistor J 2N2906 100MH JEDECTO-18

2N2906

Abstract: 2N2907 TRANSISTOR -sn- ti J 2N2906 2N2907 These transistors are silicon planar epitaxial pnp devices conforming to , and general purpose applications. QUICK REFERENCE DATA 2N2906 2N2907 VCBOmax- 60V VCEOmax- 40V , GENERAL PURPOSE 2N2906 SMALL SIGNAL TRANSISTORS 2N2907 I I T-3N- »V Electrical , transfer ratio Vce - 10V, lc = 0.1mA and Tamb = 255C 2N2906 20 2N2907 35 Vce = 10V, lc = 1.0mA and Tamb = 25°c 2N2906 25 2N2907 50 Vce = 10V, lc = 10mA and Tarnb = 25Â
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OCR Scan
transistor t3n ledex 2N2907 PNP Transistor to 92 transistor 2n2907 transistor 2n2906 T31N SO-132A C7/B11 Q7G13 07D13 0GDQ12E T-31-

2N2906

Abstract: 2N2906 Spec Sheets Details Diodes, Transistors, Thyristors, Triacs, Dio. class="hl">2N2906 HOME | CATALOG | CART |EXPRESS CHECKOUT | PARTS WATCH | NEW , Category » Transistors Buy 2N2906 at our online store! 2N2906 Availability Special Offers: FREE UPS Ground Shipping on Orders above $150.00 Lanuage Translator: 2N2906 Information Did you Know , for Parts Request a Quote Test Houses 2N2906 Specifications Military/High-Rel : N V(BR)CEO (V
American Microsemiconductor
Original
STV3208 LM3909N LM3909 1N4510 2N1711

2N2907

Abstract: 2n2907a 2N2906 2N2907 2N2906A 2N2907A w w w. c e n t r a l s e m i . c o m PNP SILICON TRANSISTOR , -18 CASE 2N2906 2N2907 60 40 2N2906A 2N2907A 60 60 MAXIMUM RATINGS: (TA=25°C) Collector-Base Voltage , V V V V V V MHz pF pF ns ns R4 (30-January 2012) 2N2906 2N2907 2N2906A 2N2907A PNP , hFE hFE TEST CONDITIONS VCE=10V, IC=0.1mA (2N2906, 2N2907) VCE=10V, IC=0.1mA (2N2906A, 2N2907A) VCE=10V, IC=1.0mA (2N2906, 2N2907) VCE=10V, IC=1.0mA (2N2906A, 2N2907A) VCE=10V, IC=10mA (2N2906, 2N2907) VCE
Central Semiconductor
Original
2N2907A PNP Transistor

2N2906

Abstract: 2N2906A 2N290Ã" â  2N2906A PN 2906 â  PN2906A PNP SILICON GENERAL PURPOSE AMPLIFIERS AND SWITCHES I THE 2N2906, 2N2906A, PN2906, PN2906A ARE PNP SILICON PLANAR EPITAXIAL TRANSISTORS FOR GENERAL PURPOSE , , 2N2221A, PN2221 , PN2221A RESPECTIVELY. THE 2N2906, 2N2906A ARE PACKED IN TO-18. THE FN2906, PN2906A ARE PACKED IN TO-92A. CASE TO-18 CASE TO-92A 0 CBE 2N2906 2N2906A EBC PN2906 PN2906A ABSOLUTS MAXIMUM RATINGS 2N2906 2N2906A PN2906 PN290ÇA Collector-Base Vcsltage -VCBO 60V 60V 60V 60V Collector-Emitter Voltage
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OCR Scan
2N2221 COMPLEMEN171ARY OMPLEMEN171ARY

motorola transistor 2N2907A

Abstract: 2N2905 MOTOROLA '" Continuous ic 600 mAdc 2N2904,A 2N2905.A 2N2906.A 2N2907,A 2N3485.A 2N3486.A Total Device Dissipation , MOTOROLA SMALL-SIGNAL SEMICONDUCTORS 4-53 2N2904,A, 2N2905,A, 2N2906.A, 2N2907,A, 2N3485,A, 2N3486 , VdcMD 2N2904, 2N2906, 2N3485 20 _ _ 2N2905, 2N2907, 2N3486 30 â'" â'" 2N2904A, 2N2906A, 2N3485A , Junction Temperature Range Tj. Tstg - 65 to + 200 °C 2N2904A 2N2905,A, 2N2906,A, 2N2907A 2N3485,A , 2N2906/2907 TO-18 (TO-206AA) CASE 26-03, STYLE 1 2N3485/3486 TO-46 (TO-206AB) GENERAL PURPOSE TRANSISTOR
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OCR Scan
motorola transistor 2N2907A 2N2905 MOTOROLA MOTOROLA 2N2905A 2N2905A MOTOROLA 2n2907 Motorola TRANSISTOR 2n2904 2N2904/2905 2N2906/2907 N3486

2N2906

Abstract: 2N2222A 0612 DISCRETE SEMICONDUCTORS DATA SHEET M3D125 2N2906; 2N2906A PNP switching transistors , . MAX. -60 UNIT open base V 2N2906 - -40 V 2N2906A - -60 V - , Product specification PNP switching transistors 2N2906; 2N2906A LIMITING VALUES In accordance , voltage VCEO - - VCBO -60 V - -5 V open base 2N2906 2N2906A VEBO , Product specification PNP switching transistors 2N2906; 2N2906A CHARACTERISTICS Tamb = 25 °C
Philips Semiconductors
Original
2N2222 2N2222A 2N2222A 0612 transistor 2N2222 PHILIPS MAM263 SCA54

2N2906

Abstract: complements: 2N2222 and 2N2222A. PINNING PIN 1 2 3 emitter base 2N2906; 2N2906A DESCRIPTION collector , collector-emitter voltage 2N2906 2N2906A collector current (DC) total power dissipation DC current gain transition , System (IEC 134). SYMBOL V cB O V CEO 2N2906; 2N2906A PARAMETER collector-base voltage collector-emitter voltage 2N2906 2N2906A emitter-base voltage collector current (DC) peak collector current peak , otherwise specified SYMBOL ICBO PARAMETER collector cut-off current 2N2906 collector cut-off current 2N2906A
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OCR Scan
MG0624

2N2907

Abstract: 2n2907 pnp 2N2906, 2N2907 PNP Silicon Epitaxial Planar Transistors with high cutoff frequency, for high , turn-off time, saturated operation Fig. 3: Test circuit for non-saturated operation 150 2N2906, 2N2907 , 2N2906 hFE 20 â'" â'" - 2N2907 hFE 35 - - - at-VcE = 10 V, -lc = 1 mA 2 N2906 hFE 25 - - - 2N2907 hFE 50 - - - at-VcE = 10 V, -lc = 10 mA 2N2906 hFE 35 - - - 2N2907 hFE 75 - - - at -VCE = 10 V, -lc = 150 mA 2N2906 hFE 40 - 120 - 2N2907 hFE 100 - 300 - at-VcE = 10 V, -lc = 0.5 A 2N2906 hFE 20
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OCR Scan
2n2907 pnp MAX580
Abstract: 5290 e-mail sales@cdil.com www.cdil.com 2N2906_07Rev240901 Continental Device India Limited , Certified Manufacturer NPN SILICON PLANAR SWITCHING TRANSISTORS 2N2906, 07 TO-18 Metal Can Package , Page 1 of 4 NPN SILICON PLANAR SWITCHING TRANSISTORS 2N2906, 07 TO-18 Metal Can Package , Current Gain DESCRIPTION DYNAMIC CHARACTERISTICS Transition Frequency hFE 2N2906 MIN MAX 20 , Device India Limited Data Sheet Page 2 of 4 2N2906, 07 TO-18 Metal Can Package TO-18 Metal Continental Device India
Original
C-120
Abstract: TO THE NPN TYPE 2N2221, 2N2221A, PN2221 , PN2221A RESPECTIVELY. THE 2N2906, 2N2906A ARE PACKED IN , 2N2906 2N2906A 2N2906 ABSOLUTE MAXIMUM RATINGS PN2906 PN2906A 2N2906A PN2906 PN2906A , (TA~25°C PARAMETER Collector-Base Breakdown Voltage unless otherwise noted) 2N2906A 2N2906 , 2N 2906 PN 2906 M â'¢ 2N2906A â  PN2906A PNP SILICON GENERAL PURPOSE AMPLIFIERS AND SWITCHES 1 CASE TO-18 THE 2TT2906, 2N2906A, PN2906, PN2906A ARE PNP SILICON PLANAR EPITAXIAL -
OCR Scan
BOX69477 FN2906A 2IT2906
Abstract: 2N2906_2907Rev010303E Continental Device India Limited Data Sheet Page 2 of 4 2N2906 2N2907 TO , >30 *Pulse Test: Pulse Width < 300µs, Duty Cycle < 2% µ 2N2906_2907Rev010303E Continental , 13.5" 80K 34 kgs 2N2906_2907Rev010303E Continental Device India Limited Data Sheet , Fax + 91-11-2579 5290, 4141 1119 email@cdil.com www.cdilsemi.com 2N2906_2907Rev010303E , SILICON PLANAR SWITCHING TRANSISTORS 2N2906 2N2907 TO-18 Metal Can Package Switching and Continental Device India
Original
2907R 010303E

2n2906

Abstract: PN2221  2N2906 â  2N2906A PN 2906 â  PN2906A pnp silicon general purpose amplifiers and switches J THE 2n2906, 2n2906a, pn2906, pn2906a are pnp SILICON planar epitaxial transistors FOR GENERAL , RATINGS 2n2906 2n2906a pn2906 pn2906a Collector-Base Veltage -vcbo 60v 60v 60v 60v , ) PARAMETER symbol 2n2906 pn2906 min max 2n2906a pn2906a min max unit test conditions Collector-Base , , 2N2221A, PN2221, pn2221a respectively. THE 2W2906, 2N2906A ARE packed in to-18. THE PN2906, pn2906a ARE
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OCR Scan

2n2907

Abstract: 2N2906 2N2906_2907Rev010303E Continental Device India Limited Data Sheet Page 2 of 4 2N2906 2N2907 TO , >20 >30 *Pulse Test: Pulse Width < 300µs, Duty Cycle < 2% µ 2N2906_2907Rev010303E , " 80K 34 kgs 2N2906_2907Rev010303E Continental Device India Limited Data Sheet Page 3 of , email@cdil.com www.cdilsemi.com 2N2906_2907Rev010303E Continental Device India Limited Data Sheet Page , SILICON PLANAR SWITCHING TRANSISTORS 2N2906 2N2907 TO-18 Metal Can Package Switching and
Continental Device India
Original
2N2906 equivalent data sheet transistor 2n2907 2N2907 SO 2N2907 application notes

2N2906

Abstract: 2N2907 2N2906_2907Rev010303E Continental Device India Limited Data Sheet Page 2 of 4 2N2906 2N2907 TO , >20 >30 *Pulse Test: Pulse Width < 300µs, Duty Cycle < 2% µ 2N2906_2907Rev010303E , " 80K 34 kgs 2N2906_2907Rev010303E Continental Device India Limited Data Sheet Page 3 of , email@cdil.com www.cdilsemi.com 2N2906_2907Rev010303E Continental Device India Limited Data Sheet Page , SILICON PLANAR SWITCHING TRANSISTORS 2N2906 2N2907 TO-18 Metal Can Package Switching and
Continental Device India
Original

2N2906

Abstract: 2N2906A lector-base voltage (open emitter) ~vCBO max. 60 V Collector-emitter voltage (open base) 2N2906 2N2906A , Material Copyrighted By Its Respective Manufacturer N AMER PHILIPS/DISCRETE 2N2906 2N2906A h^E T , ) â'"IC < 100 mA 2N2906 -vCEO max. 40 V 2N2906A ~vCEO max. 60 V Emitter-base voltage (open collector , CHARACTERISTICS T"amb = 25 °C unless otherwise specified LTE D â  bb53^31 DÃSÃ1S7 273 I 2N2906 2N2906A A IAPX 2N2906 2N2906A Collector cut-off current lE = 0;-VCB = 50V ~'CBO < 20 10 nA
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OCR Scan

2N2907 application notes

Abstract: 2N2907 Transistor 2N2906_2907Rev010303E Continental Device India Limited Data Sheet Page 2 of 4 2N2906 2N2907 TO , >20 >30 *Pulse Test: Pulse Width < 300µs, Duty Cycle < 2% µ 2N2906_2907Rev010303E , " 80K 34 kgs 2N2906_2907Rev010303E Continental Device India Limited Data Sheet Page 3 of , email@cdil.com www.cdilsemi.com 2N2906_2907Rev010303E Continental Device India Limited Data Sheet Page , PLANAR SWITCHING TRANSISTORS 2N2906 2N2907 TO-18 Metal Can Package Switching and Linear
Continental Device India
Original
2n2907 metal can IB115

2N2906A

Abstract: 2N2221 2N2221, 2N2221A, PN2221, PN2221A RESPECTIVELY. THE 2N2906, 2N2906A ARE PACKED IN TO-18. THE PN2906, PN2906A ARE PACKED IN TO-92A. CASE TO-18 CBE 2N2906 2N2906A CASE TO-92A EBC FN2906 PN2906A ABSOLUTE MAXIMUM RATINGS 2N2906 2N2906A PN2906 PN2906A Collector-Base Voltage -VCBO 60V 60V 4 60V 60V , I THE 2N2Q06, 2N2906A, PN2906, PN2906A ARE PNP SILICON PLANAR EPITAXIAL TRANSISTORS FOR GENERAL , \ t Collector-Emitter Saturation Volt-ï ve 2N2906 PN2906 MIN MAX 60 40 5 20 20 50 50 -VCE(sat
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OCR Scan

2907

Abstract: 2N2907 46 n> Turn-off time Temps total de coupure ( r IJ.Z) lc »-150 mA Igj »-15 mA 'B2 w+15mA Vf 2N2906.A , PNP SILICON TRANSISTORS, EPITAXIAL PLANAR TRANSISTORS PNP SILICIUM, PLANAR EPITAXIAUX *2N2906 , 2907A -20 -10 nA lE =0 VCB =-50 V T,mb=150°C 2N2906 2N 2907 2N 2906A 2N2907A -20 -10 ilA , 2N2906 2N 2907 2N 2906A 2N 2907A 35 75 40 100 * Pulsed t = , =â'"150 mA vCE =-10 V h21E* 2N 2906.A 2N 2907, A 40 120 100 300 iç =-500 mA vCE =-10V 2N2906 2N 2907
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OCR Scan
2IM2907 2907 2907a 2N2908 A2907A a 2907

2907

Abstract: N2907A SEMICONDUCTOR! TECHNICAL d a ta 2N2906 v! 2N2906A. 2N2907 2N2907A PNP Silicon Small-Signal , IN G S 2N2906 2N2907 40 60 5.0 600 2N2906A 2N2907A 60 CRYSTALOMCS 2805 Veteran Highwav Suite , q b * 50 Vdc) `CBO 2N2906 2N2907 2N2906A 2N2907A 2N2906. 2N2907 2N2906A. 2N2907A `EBO _ Symbol Min Max Unit V , GainO) dC - 0.1 mAdc, Vq e = 10 Vdc) hFE 2N2906 2N2907 2N2906A 2N2907A 2N2906 2N2907 2N2906A 2N2907A
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OCR Scan
N2907A N2907 2907 pnp transistor transistor 2907 2906 N 2906

951 a05

Abstract: 2907 PNP SILICON TRANSISTORS, EPITAXIAL PLANAR TRANSISTORS PNP SILICIUM, PLANAR EPITAXIAUX *2N2906 , 2907A -20 -10 nA lE =0 VCB =-50 V T,mb=150°C 2N2906 2N 2907 2N 2906A 2N2907A -20 -10 ilA , 2N2906 2N 2907 2N 2906A 2N 2907A 35 75 40 100 * Pulsed t = , =â'"150 mA vCE =-10 V h21E* 2N 2906.A 2N 2907, A 40 120 100 300 iç =-500 mA vCE =-10V 2N2906 2N 2907 , 46 n> Turn-off time Temps total de coupure ( r IJ.Z) lc »-150 mA Igj »-15 mA 'B2 w+15mA Vf 2N2906
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OCR Scan
Q62702-F408 Q62702-S170 951 a05 TD-10 103MA s170

2N2906

Abstract: 2907 2N2906, 2N2907 PNP Silicon Epitaxial Planar Transistors with high cutoff frequency, for high , turn-off time, saturated operation Fig. 3: Test circuit for non-saturated operation 150 2N2906, 2N2907 , 2N2906 hFE 20 â'" â'" - 2N2907 hFE 35 - - - at-VcE = 10 V, -lc = 1 mA 2 N2906 hFE 25 - - - 2N2907 hFE 50 - - - at-VcE = 10 V, -lc = 10 mA 2N2906 hFE 35 - - - 2N2907 hFE 75 - - - at -VCE = 10 V, -lc = 150 mA 2N2906 hFE 40 - 120 - 2N2907 hFE 100 - 300 - at-VcE = 10 V, -lc = 0.5 A 2N2906 hFE 20
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OCR Scan
Q62702-F137 Q62702-S111

2904

Abstract: st 2904 Certified Manufacturer NPN SILICON PLANAR SWITCHING TRANSISTORS 2N2906, 07 TO-18 Metal Can Package , Page 1 of 4 NPN SILICON PLANAR SWITCHING TRANSISTORS 2N2906, 07 TO-18 Metal Can Package , Current Gain DESCRIPTION DYNAMIC CHARACTERISTICS Transition Frequency hFE 2N2906 MIN MAX 20 , Device India Limited Data Sheet Page 2 of 4 2N2906, 07 TO-18 Metal Can Package TO-18 Metal , " x 13.5" 80K Page 3 of 4 Notes 2N2906, 07 TO-18 Metal Can Package Disclaimer The
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OCR Scan
2904 st 2904 TI 2905 2905

transistor 2N2905

Abstract: 2N2906 equivalent complements: 2N2222 and 2N2222A. PINNING PIN 1 2 3 emitter base 2N2906; 2N2906A DESCRIPTION collector , collector-emitter voltage 2N2906 2N2906A collector current (DC) total power dissipation DC current gain transition , System (IEC 134). SYMBOL V cB O V CEO 2N2906; 2N2906A PARAMETER collector-base voltage collector-emitter voltage 2N2906 2N2906A emitter-base voltage collector current (DC) peak collector current peak , otherwise specified SYMBOL ICBO PARAMETER collector cut-off current 2N2906 collector cut-off current 2N2906A
STMicroelectronics
Original
2N2904-2N2905-2N2906-2N2907 transistor 2N2905 2N2905 equivalent 2N2905 transistor equivalent 2n2906 N2904 2N2904/2N2905 2N2906/2N2907 P008B
Showing first 20 results.