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2N2905A Microsemi Corporation Small Signal Bipolar Transistor, 0.6A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-205AD, TO-39, 3 PIN visit Digikey Buy
2N2905AL Microsemi Corporation Small Signal Bipolar Transistor, 0.6A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-5 visit Digikey Buy
2N2905A Central Semiconductor Corp Small Signal Bipolar Transistor, 0.6A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-39, TO-39, 3 PIN visit Digikey Buy
2N2905A LEAD FREE Central Semiconductor Corp TRANS PNP 60V 0.6A TO-39 visit Digikey Buy
JANTX2N2905AL Microsemi Corporation Small Signal Bipolar Transistor, 0.6A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-39, TO-39, 3 PIN visit Digikey Buy
JANTXV2N2905A Microsemi Corporation Small Signal Bipolar Transistor, 0.6A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-205AD, TO-39, 3 PIN visit Digikey Buy

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2N2905 Datasheet

Part Manufacturer Description PDF Type
2N2905 Microsemi General Purpose Bipolar Transistor, PNP, 40V, TO-39, 3-Pin - Pol=PNP / Pkg=TO39 / Vceo=40 / Ic=0.6 / Hfe=100-300 / fT(Hz)=200M / Pwr(W)=0.6 Original
2N2905 On Semiconductor General Purpose Bipolar Transistor, PNP, 40V, TO-39, 3-Pin - Pol=PNP / Pkg=TO39 / Vceo=40 / Ic=0.6 / Hfe=100-300 / fT(Hz)=200M / Pwr(W)=0.6 Original
2N2905 Philips Semiconductors PNP switching transistors - Pol=PNP / Pkg=TO39 / Vceo=40 / Ic=0.6 / Hfe=100-300 / fT(Hz)=200M / Pwr(W)=0.6 Original
2N2905 Semelab Bipolar PNP Device in a Hermetically Sealed TO39 Metal Package - Pol=PNP / Pkg=TO39 / Vceo=40 / Ic=0.6 / Hfe=100-300 / fT(Hz)=200M / Pwr(W)=0.6 Original
2N2905 Semico Chip Type 2C2907A Geometry 0600 Polarity PNP - Pol=PNP / Pkg=TO39 / Vceo=40 / Ic=0.6 / Hfe=100-300 / fT(Hz)=200M / Pwr(W)=0.6 Original
2N2905 STMicroelectronics GENERAL PURPOSE AMPLIFIERS AND SWITCHES - Pol=PNP / Pkg=TO39 / Vceo=40 / Ic=0.6 / Hfe=100-300 / fT(Hz)=200M / Pwr(W)=0.6 Original
2N2905 Central Semiconductor PNP METAL CAN Transistors Scan
2N2905 Central Semiconductor Leaded Small Signal Transistor General Purpose Scan
2N2905 Continental Device India Semiconductor Device Data Book 1996 Scan
2N2905 Crimson Semiconductor Transistor Selection Guide Scan
2N2905 Dionics PNP Si High Current Transistor Scan
2N2905 Fairchild Semiconductor PNP small signal general purpose amplifier & switch . - Pol=PNP / Pkg=TO39 / Vceo=40 / Ic=0.6 / Hfe=100-300 / fT(Hz)=200M / Pwr(W)=0.6 Scan
2N2905 Fairchild Semiconductor Misc. Data Book Scans 1975/76 Scan
2N2905 Fairchild Semiconductor Full Line Condensed Catalogue 1977 Scan
2N2905 Ferranti Semiconductors Metal Can Transistors (Short Form) Scan
2N2905 Ferranti Semiconductors Shortform Data Book 1971 Scan
2N2905 Ferranti Semiconductors Quick Reference Guide 1985 Scan
2N2905 General Diode Transistor Selection Guide Scan
2N2905 General Electric Semiconductor Data Book 1971 Scan
2N2905 Infineon Technologies TRANS GP BJT PNP 40V 0.6A 3TO 39 Scan
Showing first 20 results.

2N2905

Catalog Datasheet MFG & Type PDF Document Tags

2n2905

Abstract: 2N2905A PNP 2N2905 ­ 2N2905A SILICON PLANAR EPITAXIAL TRANSISTORS The 2N2905 and 2N2905A are PNP , Junction Temperature TStg Storage Temperature range Value 2N2905A 2N2905 2N2905A 2N2905 2N2905A 2N2905 2N2905A 2N2905 2N2905A 2N2905 2N2905A 2N2905 2N2905A 2N2905 2N2905A 2N2905 , in free air RthJ-c Thermal Resistance, Junction to case Value 2N2905A 2N2905 2N2905A , PNP 2N2905 ­ 2N2905A TC=25°C unless otherwise noted Symbol Ratings Test Condition(s) VCB
Comset Semiconductors
Original
2N2905 equivalent transistor 2N2905 2N2905 transistor 2N2905a equivalent ST 2N2905 of 2n2905 100MH

2N2904

Abstract: 2n2905 REV: F Page 1 of 2 2N2904, 2N2904A, 2N2904AL, 2N2905, 2N2905A, 2N2905AL JAN SERIES ELECTRICAL , Ratio IC = 0.1 mAdc, VCE = 10 Vdc 2N2904 2N2905 2N2904A, 2N2904AL 2N2905A, 2N2905AL 2N2904 2N2905 2N2904A, 2N2904AL 2N2905A, 2N2905AL 2N2904 2N2905 2N2904A, 2N2904AL 2N2905A, 2N2905AL 2N2904, 2N2904A, L 2N2905, 2N2905A, L 2N2904 2N2905 2N2904A, 2N2904AL 2N2905A, 2N2905AL 20 35 40 75 25 50 40 100 35 75 40 , 2N2905 2N2904A, 2N2905A 2N2904AL, 2N2905AL Small-Signal Cutoff Frequency, Magnitude IC = 50 mAdc, VCE =
New England Semiconductor
Original
2N2904 transistor Transistor 2N2905A TRANSISTOR 2n2904 2n2904 2n2905 qpl 2N2905 MIL-PRF-19500/290

2n2905

Abstract: 2N2904 2N2904 2N2904A 2N2905 2N2905A PNP SILICON TRANSISTOR w w w. c e n t r a l s e m i . c o m , =500mA, IB=50mA IC=150mA, IB=15mA IC=500mA, IB=50mA 2N2904 2N2905 60 40 2N2904A 2N2905A 60 60 UNITS V V V A W W °C 5.0 0.6 0.6 3.0 -65 to +200 2N2904A 2N2905A MIN MAX 10 50 60 60 5.0 0.4 1.6 1.3 2.6 2N2905 , ) VCE=10V, IC=100A (2N2904A, 2N2905A) 40 VCE=10V, IC=1.0mA (2N2904, 2N2905) 25 VCE=10V, IC=1.0mA (2N2904A, 2N2905A) 40 VCE=10V, IC=10mA (2N2904, 2N2905) 35 VCE=10V, IC=10mA (2N2904A, 2N2905A) 40 VCE
Central Semiconductor
Original
2N2904 PNP Transistor 2N2905A transistor

2n2905

Abstract: 2n2904 2N2904A 2N2904AL Qualified Level JAN JANTX JANTXV JANS 2N2905 2N2905A 2N2905AL MAXIMUM , 2N2904, 2N2904A, 2N2904AL, 2N2905, 2N2905A, 2N2905AL JAN SERIES ELECTRICAL CHARACTERISTICS (con't , , VCE = 10 Vdc IC = 500 mAdc, VCE = 10 Vdc 2N2904 2N2905 2N2904A, 2N2904AL 2N2905A, 2N2905AL 2N2904 2N2905 2N2904A, 2N2904AL 2N2905A, 2N2905AL 2N2904 2N2905 2N2904A, 2N2904AL 2N2905A, 2N2905AL 2N2904, 2N2904A, L 2N2905, 2N2905A, L 2N2904 2N2905 2N2904A, 2N2904AL 2N2905A, 2N2905AL
Microsemi
Original
2N2905A JANTXV 2N2905A JANS 2N2904 datasheet datasheet of 2n2905

2N2905

Abstract: 2N2905 equivalent , SWITCHING, TYPES, 2N2904, 2N2904A, 2N2904AL, 2N2905, 2N2905A, AND 2N2905AL, JAN, JANTX, JANTXV, JANS , +25°C. 2N2904 (1) 2N2905 (1) 2N2904A, (2) 2N2905A, (2) 2N2904AL, (2) 2N2905AL (2) PT = (1) TA , 175 40 40 120 40 2N2905A 2N2905AL Min Max hFE5 (1) 2N2905 Min Max hFE4 (1 , (see 4.5.1). Types 2N2904 2N2904A 2N2904AL 2N2905 2N2905A 2N2905AL Cobo 100 kHz f 1 MHz , 40 60 60 2N2904, 2N2905 2N2904A, 2N2905A 2N2904AL, 2N2905AL Collector to base cutoff current
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Original
2n2905a jantx 2N2905A JAN M2N2905A MIL-PRF-19500/290N MIL-PRF-19500/290M MIL-PRF-19500

2N2905 equivalent

Abstract: 2N2905a equivalent 2N2905 2N2905A 2N2905AL ABSOLUTE MAXIMUM RATINGS (TC = +25°C unless otherwise noted) Symbol , 2N2905A, 2N2905AL 20 35 40 75 IC = 1.0mAdc, VCE = 10Vdc 2N2904 2N2905 2N2904A, 2N2904AL 2N2905A, 2N2905AL 25 50 40 100 IC = 10mAdc, VCE = 10Vdc 2N2904 2N2905 2N2904A, 2N2904AL 2N2905A, 2N2905AL IC = 150mAdc, VCE = 10Vdc 2N2904, 2N2904A / AL 2N2905, 2N2905A / AL 40 100 IC = 500mAdc, VCE = 10Vdc 2N2904 2N2905 2N2904A, 2N2904AL 2N2905A, 2N2905AL 20 30 40 50
Microsemi
Original
equivalent transistor 2N2905 T4-LDS-0186

2n2905 2n2907

Abstract: 2N2905 equivalent 2N2905 2N2907 GENERAL PURPOSE AMPLIFIERS AND SWITCHES DESCRIPTION The 2N2905 and 2N2907 are silicon planar epitaxial PNP transistors in Jedec TO-39 (for 2N2905) and in Jedec TO-18 (for 2N2907 , . 2N2905 approved to CECC 50002-102, 2N2907 approved to CECC 50002-103 available on request. TO-18 TO , stg Tj Parameter Collector Current o Total Dissipation at T amb 25 C for 2N2905 for 2N2907 at T case 25 o C for 2N2905 for 2N2907 St orage Temperature Max. Operating Junction
STMicroelectronics
Original
2n2905 2n2907 st 2n2907 to-18 2N2907 PNP Transistor 2N2907 application notes 2N2907 Transistor data sheet transistor 2n2907 2N2905/2N2907 P008B

2n2905a

Abstract: 2N2905 2N2904A 2N2905A 2N2904 2N290S 2N2904A 2N2905A 2N2904.2N2904A 2N2905. 2N2905A 2N2904 2N2905 2N2904A 2N2905A , 2N2904A, 2N2905A hFE 2N2904, 2N2904A 2N2905. 2N2905A 40 100 120 300 Symbol !c b o Min - - Max , " SEMICONDUCTOR! TECHNICAL DATA 2N2904. 2N2904A, 2N2905 2N2905A PNP Silicon Small-Signal , ' Tstg -65 to 200 Symbol v CEO VC 8 0 v EBO !C 2 N2904 2N2905 40 60 50 600 2N2904A 2N2905A 60 Unit , Voltage11) (IC = 10 mAdc. Ie = 0) v (BR|CEO 2N2904. 2N2905 2N2904A. 2N2905A v (BR)CBO v (BR)EBO 'CBO 2N2904
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OCR Scan
2N2904JAN 2N2905JAN

2N2905

Abstract: equivalent transistor 2N2905 CBO V EBO R JA R JC IC PT TJ & T stg Value 2N2904 2N2904A 2N2905 2N2905A 40 60 60 5.0 195 50 600 , 2N2904A, 2N2905A Collector-Emitter Cutoff Voltage V CE = 40 V 2N2904, 2N2905 V CE = 60 V 2N2904A, 2N2905A Collector-Base Cutoff Current V CB = 60 V All Types V CB = 50 V 2N2904, 2N2905 2N2904A, 2N2905A 2N2904, 2N2905 , 0.1 mA, V CE = 10 V 2N2904 2N2905 2N2904A 2N2905A I C = 1.0 mA, V CE = 10 V 2N2904 2N2905 2N2904A 2N2905A 2N2904 2N2905 2N2904A 2N2905A 2N2904, 2N2904A 2N2905, 2N2905A 2N2904 2N2905 2N2904A 2N2905A h FE
Microsemi
Original
2N2904 equivalent

2N2905

Abstract: 2N2905A Conditions 2N2904 2N2904A 2N2905 2N2905A UNIT 60 60 Vdc 5.0 5.0 Vdc 40 60 Vdc 600 mAdc 0.6 watts 3.0 watts -65 to +200°C 2N2904 2N2904A 2N2905 2N2905A Min Max Min Max Unit iCBO , 2N2904A 2N2905A Min Max Min Max Unit hFE VCE=10V, IC=100uA(2N2904,2N2905 Only) 20 35 - hFE VCE=10V, IC=i00uA(2N290^A,2N2905A Only) ko 75 - hFE VCE=10V, IC=1mA(2N2904,2N2905 Only) 25 50 - hFE VCE=10V, ICB1mA(2N2S04A,2N2905A Only) 40 100 - hFE VCE=10V, IC=10mA(2N290^,2N2905 Only) 35 75 - hFE VCE
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OCR Scan
2n290a

2N2905 MOTOROLA

Abstract: 2N2905 NATIONAL 2N2905 Spec Sheets Details Diodes, Transistors, Thyristors, Triacs, Dio. class="hl">2N2905 HOME | CATALOG | CART |EXPRESS CHECKOUT | PARTS WATCH | NEW , Category » Transistors Buy 2N2905 at our online store! 2N2905 Availability Special Offers: FREE UPS Ground Shipping on Orders above $150.00 Lanuage Translator: 2N2905 Information Did you Know , Products Search for Parts Request a Quote Test Houses 2N2905 Specifications Military/High-Rel : N V(BR
American Microsemiconductor
Original
2N2905 MOTOROLA 2N2905 NATIONAL STV3208 LM3909N LM3909 1N4510 2N1711

2n2905a

Abstract: 2N2905 : 2N2219 and 2N2219A. PINNING PIN 1 2 3 emitter base 2N2905; 2N2905A DESCRIPTION collector , collector-emitter voltage 2N2905 2N2905A collector current (DC) total power dissipation DC current gain transition , 2N2905; 2N2905A PARAMETER collector-base voltage collector-emitter voltage 2N2905 2N2905A emitter-base , transistors CHARACTERISTICS Tam b = 25 'C unless otherwise specified. SYMBOL ICBO 2N2905; 2N2905A PARAMETER collector cut-off current 2N2905 collector cut-off current 2N2905A emitter cut-off current DC
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OCR Scan
2N2905 2N2219 2N2905 NPN transistor

equivalent transistor 2N2905

Abstract: 2N2905a equivalent , SILICON, SWITCHING TYPES 2N2904, 2N2904A, 2N2904AL, 2N2905, 2N2905A, AND 2N2905AL, JAN, JANTX, JANTXV , 100 300 50 (1) Pulsed (see 4.5.1). Types 2N2904 2N2904A 2N2904AL 2N2905 2N2905A 2N2905AL , 2N2904, 2N2905 2N2904A, 2N2905A 2N2904AL, 2N2905AL Emitter to base cutoff current 10 V(BR)CEO 2N2904, 2N2905 2N2904A, 2N2905A 2N2904AL, 2N2905AL Collector to base cutoff current °C/W 20 10 , mA dc hFE2 2N2904 2N2905 2N2904A, 2N2904AL 2N2905A, 2N2905AL Forward current transfer
DEPARTMENT OF DEFENSE
Original
MIL-PRF-19500/290K MIL-PRF-19500/290J

FT3904

Abstract: 2N2905 2N2219 2N3133 2N3133 2N3134 2N3134 2N3135 2N2800 2N2905 2N2905 2N2907 2N2907 2N2905 2N2907 2N2905JAN 2N2904 2N2906 2N2904 2N2906 2N2907AJA 2N2905AJA 2N2904 2N2905 2N2907 2N2905 2N2904 2N3250 FT3906 FT3905 FT3905 2N2905A 2N2907A 2N2905 2N2905 2N2905 2N2905 100 - 300 @ 150 100- 300 @ 150 40 - 120 @ 150 40- 1 2 0 @
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OCR Scan
2N2222JAN 2N1711A FT3904 2N295 2N33 2N957 2N2959 2N3116 2IM2958 2N3115 2N916

motorola transistor 2N2907A

Abstract: 2N2905 MOTOROLA '" Continuous ic 600 mAdc 2N2904,A 2N2905.A 2N2906.A 2N2907,A 2N3485.A 2N3486.A Total Device Dissipation , '" 2N2905, 2N2907, 2N3486 35 â'" â'" 2N2904A, 2N2906A, 2N3485A 40 â'" â'" 2N2905A, 2N2907A, 2N3486A 75 â'" â'" dC = 1.0 mAdc, Vce = 10 Vdc) 2N2904, 2N2906, 2N3485 25 _ _ 2N2905, 2N2907, 2N3486 50 , 40 â'" â'" 2N2905A, 2N2907A, 2N3486A 50 â'" â'" ^ALSO AVAILABLE 2N2905ALJANS AND 2N2907AJANS , Junction Temperature Range Tj. Tstg - 65 to + 200 °C 2N2904A 2N2905,A, 2N2906,A, 2N2907A 2N3485,A
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OCR Scan
motorola transistor 2N2907A MOTOROLA 2N2905A 2N2905A MOTOROLA 2n2907 Motorola transistor 2N2905 motorola motorola 2N2905 2N2904/2905 2N2906/2907 2N3485/3486 N3486

2N2905

Abstract: TRANSISTOR 2n2905 DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D111 2N2905; 2N2905A PNP switching , 2N2905; 2N2905A FEATURES PINNING · High current (max. 600 mA) PIN · Low voltage (max. 60 V , Philips Semiconductors Product specification PNP switching transistors 2N2905; 2N2905A , collector-base voltage VCEO - - VCBO -60 V - -5 V open base 2N2905 2N2905A VEBO , Product specification PNP switching transistors 2N2905; 2N2905A CHARACTERISTICS Tamb = 25 °C
Philips Semiconductors
Original
2n2219a npn transistor 2N2905 2N2219 application 2n2905 philips MAM318 SCA54

2n2905 configuration

Abstract: 2N2905 equivalent Certified Manufacturer PNP SILICON PLANAR SWITCHING TRANSISTORS 2N2904 2N2905 TO-39 Metal Can , Current Gain 2N2905 >20 >30 *Pulse Test: Pulse Width < 300µs, Duty Cycle < 2% µ , TRANSISTORS 2N2904 2N2905 TO-39 Metal Can Package ELECTRICAL CHARACTERISTICS (Ta=25ºC unless , Page 2 of 4 2N2904 2N2905 TO-39 Metal Can Package TO-39 Metal Can Package A DIM A B , 2N2904_2905Rev310303E Continental Device India Limited Data Sheet Page 3 of 4 Notes 2N2904 2N2905
Continental Device India
Original
2n2905 configuration 2n2905 configuration circuit and description C-120 2905R 310303E
Abstract: Certified Manufacturer PNP SILICON PLANAR SWITCHING TRANSISTORS 2N2904 2N2905 TO-39 Metal Can , India Limited Data Sheet Page 1 of 4 PNP SILICON PLANAR SWITCHING TRANSISTORS 2N2904 2N2905 , 2N2905 MIN MAX UNITS 35 50 75 120 100 300 30 DYNAMIC CHARACTERISTICS DESCRIPTION , 2N2904 2N2905 TO-39 Metal Can Package TO-39 Metal Can Package A DIM A B C D E F G H J K , Data Sheet Page 3 of 4 Notes 2N2904 2N2905 TO-39 Metal Can Package Disclaimer The Continental Device India
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QSC/L-000019 270302D
Abstract: SILICON PLANAR SWITCHING TRANSISTORS 2N2904 2N2905 TO-39 Metal Can Package General Purpose , *IC=500mA, VCE=10V hFE IC=0.1mA, VCE=10V IC=1mA, VCE=10V DC Current Gain 2N2905 >20 , 2N2905 TO-39 Metal Can Package ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise , 2N2904 2N2905 TO-39 Metal Can Package TO-39 Metal Can Package A DIM A B C D E F G H , 310303E Continental Device India Limited Data Sheet Page 3 of 4 Notes 2N2904 2N2905 Continental Device India
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Abstract: SILICON PLANAR SWITCHING TRANSISTORS 2N2904 2N2905 TO-39 Metal Can Package General Purpose , *IC=500mA, VCE=10V hFE IC=0.1mA, VCE=10V IC=1mA, VCE=10V DC Current Gain 2N2905 >20 , 2N2905 TO-39 Metal Can Package ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise , 2N2904 2N2905 TO-39 Metal Can Package TO-39 Metal Can Package A DIM A B C D E F G H , Continental Device India Limited Data Sheet Page 3 of 4 Notes 2N2904 2N2905 TO-39 Metal Can Continental Device India
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ic 2904

Abstract: ir 2905 PNP 2N2905 ­ 2N2905A SILICON PLANAR EPITAXIAL TRANSISTORS The 2N2905 and 2N2905A are PNP , Junction Temperature TStg Storage Temperature range Value 2N2905A 2N2905 2N2905A 2N2905 2N2905A 2N2905 2N2905A 2N2905 2N2905A 2N2905 2N2905A 2N2905 2N2905A 2N2905 2N2905A 2N2905 , in free air RthJ-c Thermal Resistance, Junction to case Value 2N2905A 2N2905 2N2905A 2N2905 Unit 58.3 °C/W 292 °C/W ELECTRICAL CHARACTERISTICS COMSET SEMICONDUCTORS 1/3
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ic 2904 ir 2905 2904 2904 d 2905 N2905

2N 2905a pnp transistor

Abstract: 2904 2N2904A 2N2904AL Qualified Level JAN JANTX JANTXV JANS 2N2905 2N2905A 2N2905AL MAXIMUM , Temp. Range 2N2904 2N2904A, L 2N2905 2N2905A, L VCEO VCBO VEBO IC PT TJ, Tstg 40 60 , -205AD) 2N2904, 2N2904A 2N2905, 2N2905A THERMAL CHARACTERISTICS Characteristics Symbol Thermal Resistance , Vdc 2N2904, 2N2905 2N2904A, L, 2N2905A, L 2N2904, 2N2905 2N2904A, L, 2N2905A, L 2N2904, 2N2905 , 2N2904, 2N2904A, 2N2904AL, 2N2905, 2N2905A, 2N2905AL JAN SERIES ELECTRICAL CHARACTERISTICS (con't
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2N 2905a pnp transistor st 2904 2905 transistor CI 2904 2905a transistor 2n 2905a

k 942

Abstract: K942 , SILICON, SWITCHING TYPES 2N2904, 2N2904A, 2N2904AL, 2N2905, 2N2905A, AND 2N2905AL, JAN, JANTX, JANTXV , +25°C VCBO VCEO VEBO IC TSTG and TJ RJA RJC W 2N2904 (1) 2N2905 (1) 2N2904A , 25 175 35 40 120 20 2N2905 2N2905 2N2905 2N2905 35 50 450 75 100 , ) 2N2905 Min Max hFE4 (1) 2N2904 Min Max hFE3 IC = 0.1 mA dc Min Max hFE2 , 100 300 50 (1) Pulsed (see 4.5.1). Types 2N2904 2N2904A 2N2904AL 2N2905 2N2905A 2N2905AL
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Q62702-F65 Q62702-F66 k 942 K942 N 2904 VCC-10V C-30V

2904

Abstract: 2907 Data Sheet 2N2904 ^m M â'žâ  | , â  mâ"¢ 2N2904A COilFPHI 2N2905 WdlLl HI , DESCRIPTION The CENTRAL SEMICONDUCTOR 2N2904,A,2N2905,A are Silicon PNP Planar Epitaxial Transistors designed , Conditions 2N2904 2N2904A 2N2905 2N2905A UNIT 60 60 Vdc 5.0 5.0 Vdc 40 60 Vdc 600 mAdc 0.6 watts 3.0 watts -65 to +200°C 2N2904 2N2904A 2N2905 2N2905A Min Max Min Max Unit iCBO , 1.6 V VBE(s) IC=150mA, 1B=15mA 1.3 1.3 V VBE(s) IC=500mA, lB=50mA 2.6 2.6 V 2N2904 2N2905
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2907 a 2907

2904

Abstract: st 2904 : 2N2219 and 2N2219A. PINNING PIN 1 2 3 emitter base 2N2905; 2N2905A DESCRIPTION collector , collector-emitter voltage 2N2905 2N2905A collector current (DC) total power dissipation DC current gain transition , 2N2905; 2N2905A PARAMETER collector-base voltage collector-emitter voltage 2N2905 2N2905A emitter-base , transistors CHARACTERISTICS Tam b = 25 'C unless otherwise specified. SYMBOL ICBO 2N2905; 2N2905A PARAMETER collector cut-off current 2N2905 collector cut-off current 2N2905A emitter cut-off current DC
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OCR Scan
TI 2905
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