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2N2904AL Microsemi Corporation Transistor
2N2904A Central Semiconductor Corp Small Signal Bipolar Transistor, 0.6A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-39, TO-39, 3 PIN
JANTX2N2904A Microsemi Corporation Small Signal Bipolar Transistor, 0.6A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-205AD, TO-39, 3 PIN
JANTX2N2904 Microsemi Corporation Small Signal Bipolar Transistor, 0.6A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon, TO-205AD, TO-39, 3 PIN
JAN2N2904A Microsemi Corporation Small Signal Bipolar Transistor, 0.6A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-205AD, TO-39, 3 PIN
JANTXV2N2904 Microsemi Corporation Small Signal Bipolar Transistor, 0.6A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon, TO-205AD, TO-39, 3 PIN

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2N2904 Datasheet

Part Manufacturer Description PDF Type
2N2904 Microsemi BJT, PNP, Switching Silicon Transistor, VCB0 60V, IC 0.6A - Pol=PNP / Pkg=TO39 / Vceo=40 / Ic=0.6 / Hfe=40-120 / fT(Hz)=200M / Pwr(W)=0.6 Original
2N2904 On Semiconductor Bipolar Transistor, General Purpose Transistors PNP Silicon Annular Hermetic Transistors - Pol=PNP / Pkg=TO39 / Vceo=40 / Ic=0.6 / Hfe=40-120 / fT(Hz)=200M / Pwr(W)=0.6 Original
2N2904 Semelab General Purpose PNP Transistor - Pol=PNP / Pkg=TO39 / Vceo=40 / Ic=0.6 / Hfe=40-120 / fT(Hz)=200M / Pwr(W)=0.6 Original
2N2904 Semico Chip Type 2C2904A Geometry 0600 Polarity PNP - Pol=PNP / Pkg=TO39 / Vceo=40 / Ic=0.6 / Hfe=40-120 / fT(Hz)=200M / Pwr(W)=0.6 Original
2N2904 Advanced Semiconductor Silicon Transistor Selection Guide Scan
2N2904 Bharat Electronics Transistor Selection Guide Scan
2N2904 Central Semiconductor PNP METAL CAN Transistors Scan
2N2904 Central Semiconductor Leaded Small Signal Transistor General Purpose Scan
2N2904 Continental Device India Semiconductor Device Data Book 1996 Scan
2N2904 Crimson Semiconductor Transistor Selection Guide Scan
2N2904 Dionics PNP Si High Current Transistor Scan
2N2904 Fairchild Semiconductor PNP small signal general purpose amplifier & switch . - Pol=PNP / Pkg=TO39 / Vceo=40 / Ic=0.6 / Hfe=40-120 / fT(Hz)=200M / Pwr(W)=0.6 Scan
2N2904 Fairchild Semiconductor Misc. Data Book Scans 1975/76 Scan
2N2904 Fairchild Semiconductor Full Line Condensed Catalogue 1977 Scan
2N2904 Ferranti Semiconductors Metal Can Transistors (Short Form) Scan
2N2904 Ferranti Semiconductors Quick Reference Guide 1985 Scan
2N2904 Ferranti Semiconductors Shortform Data Book 1971 Scan
2N2904 General Diode Transistor Selection Guide Scan
2N2904 Infineon Technologies TRANS GP BJT PNP 40V 0.6A 3TO 39 Scan
2N2904 ITT Semiconductors Semiconductor Summary 1969 Scan
Showing first 20 results.

2N2904

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: TECHNICAL DATA 2N2904, 2N2904A JAN, JTX, JTXV 2N2904AL JAN, JTX, JTXV 2N2905, 2N2905A JAN, JTX , REV: F Page 1 of 2 2N2904, 2N2904A, 2N2904AL, 2N2905, 2N2905A, 2N2905AL JAN SERIES ELECTRICAL , Ratio IC = 0.1 mAdc, VCE = 10 Vdc 2N2904 2N2905 2N2904A, 2N2904AL 2N2905A, 2N2905AL 2N2904 2N2905 2N2904A, 2N2904AL 2N2905A, 2N2905AL 2N2904 2N2905 2N2904A, 2N2904AL 2N2905A, 2N2905AL 2N2904, 2N2904A, L 2N2905, 2N2905A, L 2N2904 2N2905 2N2904A, 2N2904AL 2N2905A, 2N2905AL 20 35 40 75 25 50 40 100 35 75 40 New England Semiconductor
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2N2904 transistor 2N2905 transistor 2n2904 2n2905 qpl 2N2905 TRANSISTOR 2n2904 TRANSISTOR 2n2905 MIL-PRF-19500/290
Abstract: 2N2904 Spec Sheets Details Diodes, Transistors, Thyristors, Triacs, Dio. class="hl">2N2904 HOME | CATALOG | CART |EXPRESS CHECKOUT | PARTS WATCH | NEW , Category » Transistors Buy 2N2904 at our online store! 2N2904 Availability Special Offers: FREE UPS Ground Shipping on Orders above $150.00 Lanuage Translator: 2N2904 Information Did you Know , for Parts Request a Quote Test Houses 2N2904 Specifications Military/High-Rel : N V(BR)CEO (V American Microsemiconductor
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STV3208 LM3909N LM3909 1N4510 2N1711
Abstract: per MIL-PRF-19500/290 DEVICES LEVELS 2N2904 2N2904A 2N2904AL JAN JANTX JANTXV JANS , (3) Forward-Current Transfer Ratio IC = 0.1mAdc, VCE = 10Vdc 2N2904 2N2905 2N2904A, 2N2904AL 2N2905A, 2N2905AL 20 35 40 75 IC = 1.0mAdc, VCE = 10Vdc 2N2904 2N2905 2N2904A, 2N2904AL 2N2905A, 2N2905AL 25 50 40 100 IC = 10mAdc, VCE = 10Vdc 2N2904 2N2905 2N2904A, 2N2904AL , IC = 500mAdc, VCE = 10Vdc 2N2904 2N2905 2N2904A, 2N2904AL 2N2905A, 2N2905AL 20 30 40 50 Microsemi
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2N2905 equivalent 2N2905a equivalent 2n2905a jantx equivalent transistor 2N2905 of 2n2905 T4-LDS-0186
Abstract: 2N2904 2N2904A 2N2905 2N2905A PNP SILICON TRANSISTOR w w w. c e n t r a l s e m i . c o m , =500mA, IB=50mA IC=150mA, IB=15mA IC=500mA, IB=50mA 2N2904 2N2905 60 40 2N2904A 2N2905A 60 60 UNITS V V V A W , 2N2905 MIN MAX 20 60 40 5.0 0.4 1.6 1.3 2.6 2N2904 2N2904A MIN MAX 20 VCE=10V, IC=100A (2N2904, 2N2905) VCE=10V, IC=100A (2N2904A, 2N2905A) 40 VCE=10V, IC=1.0mA (2N2904, 2N2905) 25 VCE=10V, IC=1.0mA (2N2904A, 2N2905A) 40 VCE=10V, IC=10mA (2N2904, 2N2905) 35 VCE=10V, IC=10mA (2N2904A, 2N2905A) 40 VCE Central Semiconductor
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2N2904 PNP Transistor Transistor 2N2905A 2N2905A transistor 100MH
Abstract: Voltage11) (IC = 10 mAdc. Ie = 0) v (BR|CEO 2N2904. 2N2905 2N2904A. 2N2905A v (BR)CBO v (BR)EBO 'CBO 2N2904. 2N2905 2N2904A. 2N2905A 2N2904. 2N2905 2N2904A. 2N2905A 0 02 0 01 20 10 -continued-. Symbol Min , 2N2904A 2N2905A 2N2904 2N290S 2N2904A 2N2905A 2N2904.2N2904A 2N2905. 2N2905A 2N2904 2N2905 2N2904A 2N2905A , " SEMICONDUCTOR! TECHNICAL DATA 2N2904. 2N2904A, 2N2905 2N2905A PNP Silicon Small-Signal , Unit MAdc -1.0 1.0 0.05 nAdc 2N2904.2N2905 2N2904A 2N2905A 'e b o - _. ON -
OCR Scan
N2904 2N2904JAN 2N2905JAN
Abstract: 2N2904, 2N2904A, 2N2904AL, 2N2905, 2N2905A, 2N2905AL JAN SERIES ELECTRICAL CHARACTERISTICS (con't , , VCE = 10 Vdc IC = 500 mAdc, VCE = 10 Vdc 2N2904 2N2905 2N2904A, 2N2904AL 2N2905A, 2N2905AL 2N2904 2N2905 2N2904A, 2N2904AL 2N2905A, 2N2905AL 2N2904 2N2905 2N2904A, 2N2904AL 2N2905A, 2N2905AL 2N2904, 2N2904A, L 2N2905, 2N2905A, L 2N2904 2N2905 2N2904A, 2N2904AL 2N2905A, 2N2905AL , , f = 1.0 kHz 2N2904 2N2905 2N2904A, 2N2905A 2N2904AL, 2N2905AL Small-Signal Cutoff Frequency Microsemi
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2N2904 datasheet 2N2905A JANS 2N2905A JANTXV datasheet of 2n2905
Abstract: N AMER PHILIPS/DISCRETE L^E D â  LbSB^ai 0D5äim blâ â  2N2904 2N2904A uu I IAPX , voltage (open emitter) -vCBO max. 60 V Collector-emitter voltage (open base) 2N2904 -VCEo 2N2904A -VCEO , This Material Copyrighted By Its Respective Manufacturer N AMER PHILIPS/DISCRETE 2N2904 2N2904A , base) â'" Iq < 100 mA 2N2904 -VCE0 max. 40 V 2N2904A -VCE0 max. 60 V Emitter-base voltage (open , J> bbsa'm CHARACTERISTICS A 002011b 4*16 2N2904 2N2904A IAPX Tamb = 25 °C unless otherwise -
OCR Scan
2n2904 philips W744 z823s Z823S2
Abstract: CBO V EBO R JA R JC IC PT TJ & T stg Value 2N2904 2N2904A 2N2905 2N2905A 40 60 60 5.0 195 50 600 , 2N2904A, 2N2905A Collector-Emitter Cutoff Voltage V CE = 40 V 2N2904, 2N2905 V CE = 60 V 2N2904A, 2N2905A Collector-Base Cutoff Current V CB = 60 V All Types V CB = 50 V 2N2904, 2N2905 2N2904A, 2N2905A 2N2904, 2N2905 , 0.1 mA, V CE = 10 V 2N2904 2N2905 2N2904A 2N2905A I C = 1.0 mA, V CE = 10 V 2N2904 2N2905 2N2904A 2N2905A 2N2904 2N2905 2N2904A 2N2905A 2N2904, 2N2904A 2N2905, 2N2905A 2N2904 2N2905 2N2904A 2N2905A h FE Microsemi
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2N2904 equivalent
Abstract: JL 2N2904 2N2904A PHILIPS INTERNATIONAL SbE D m 711002b 00421,20 560 HPHIN SILICON PLANAR , {open emitter) ~vCBO max. 60 V Collector-emitter voltage (open base) 2N2904 -VCEO 2N2904A -VcEO max , This Material Copyrighted By Its Respective Manufacturer 2N2904 2.N2904A_J^_ - PHILIPS , Collector-emitter voltage (open base) -lC< 100 mA 2N2904 -VCEO 2N2904A -VCEO max. max. 40 60 V V Emitter-base , Manufacturer Silicon planar epitaxial transistors T-37-17 I I 2N2904 2N2904A PHILIPS INTERNATIONAL 600 -
OCR Scan
J-37-17 Z82352 7Z82353
Abstract: , SWITCHING, TYPES, 2N2904, 2N2904A, 2N2904AL, 2N2905, 2N2905A, AND 2N2905AL, JAN, JANTX, JANTXV, JANS , +25°C. 2N2904 (1) 2N2905 (1) 2N2904A, (2) 2N2905A, (2) 2N2904AL, (2) 2N2905AL (2) PT = (1) TA , (see 4.5.1). Types 2N2904 2N2904A 2N2904AL 2N2905 2N2905A 2N2905AL Cobo 100 kHz f 1 MHz , 40 60 60 2N2904, 2N2905 2N2904A, 2N2905A 2N2904AL, 2N2905AL Collector to base cutoff current , 2N2905A, 2N2905AL 1 VCE = 60 V dc 2N2904, 2N2905 2N2904A, 2N2904AL Forward current transfer -
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M2N2905A 2N2905A JAN MIL-PRF-19500/290N MIL-PRF-19500/290M MIL-PRF-19500
Abstract: Data Sheet 2N2904 ^m M â'žâ  | , â  mâ"¢ 2N2904A COilFPHI 2N2905 WdlLl HI , Conditions 2N2904 2N2904A 2N2905 2N2905A UNIT 60 60 Vdc 5.0 5.0 Vdc 40 60 Vdc 600 mAdc 0.6 watts 3.0 watts -65 to +200°C 2N2904 2N2904A 2N2905 2N2905A Min Max Min Max Unit iCBO , 2N2904A 2N2905A Min Max Min Max Unit hFE VCE=10V, IC=100uA(2N2904,2N2905 Only) 20 35 - hFE VCE , =500mA(2N2904,2N2905 Only) 20 30 - hFE VCE=10V, ¡C=500mA(2N2904A,2N2905A Only) 40 50 - fT VCE -
OCR Scan
2N290 2n290a 2N2S04A
Abstract: 0.40 @ 10 0.40 @ 10 0.25 @ 5 2N2904 2N2906 2N2905 2N2904 2N2904 ?N?Qf)4 2N2904 2N2904 2N2905AJ/5 2N2904 2N2904A 2N2904A 2N2904A 2N2904A 2N3250A 2N2905AJ/5 2N2907AJ A 2N2904A 2N2904A 2N2904A 2N2904A 2N2905 2N2907 2N2907 2N2905 2N2905 2N2907 2N2905A 2N2905A 2N2907A 2N2905A 2N2905A 2N2906A 2N2904A 2N2904A 2N2906A 2N2904A 2N2904A 2N2904A 2N2907A 2N2905A 2N2905A 2N2907A 2N4032 2N2906A 2N2904A 2.8 2.0 2.0 2.0 -
OCR Scan
2N956 2n697 2N2218A 2N2221A 2N2868 2N3110 2N2194 2N2194A
Abstract: , SILICON, SWITCHING TYPES 2N2904, 2N2904A, 2N2904AL, 2N2905, 2N2905A, AND 2N2905AL, JAN, JANTX, JANTXV , 100 300 50 (1) Pulsed (see 4.5.1). Types 2N2904 2N2904A 2N2904AL 2N2905 2N2905A 2N2905AL , 2N2904, 2N2905 2N2904A, 2N2905A 2N2904AL, 2N2905AL Emitter to base cutoff current 10 V(BR)CEO 2N2904, 2N2905 2N2904A, 2N2905A 2N2904AL, 2N2905AL Collector to base cutoff current °C/W 20 10 , mA dc hFE2 2N2904 2N2905 2N2904A, 2N2904AL 2N2905A, 2N2905AL Forward current transfer DEPARTMENT OF DEFENSE
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MIL-PRF-19500/290K MIL-PRF-19500/290J
Abstract: mAdc, Vce = 10 Vdc) 2N2904, 2N2906, 2N3485 35 â'" â'" 2N2905, 2N2907, 2N3486 75 â'" â'" 2N2904A , VdcMD 2N2904, 2N2906, 2N3485 20 _ _ 2N2905, 2N2907, 2N3486 30 â'" â'" 2N2904A, 2N2906A, 2N3485A , '" Continuous ic 600 mAdc 2N2904,A 2N2905.A 2N2906.A 2N2907,A 2N3485.A 2N3486.A Total Device Dissipation , Junction Temperature Range Tj. Tstg - 65 to + 200 °C 2N2904A 2N2905,A, 2N2906,A, 2N2907A 2N3485,A, 2N3486,A JAN, JTX, JTXV AVAILABLE* CASE 79-02, STYLE 1 2N2904/2905 TO-39 (TO-205AD) CASE 22-03, STYLE 1 -
OCR Scan
motorola transistor 2N2907A 2N2905 MOTOROLA MOTOROLA 2N2905A 2N2905A MOTOROLA 2n2907 Motorola transistor 2N2905 motorola 2N2904/2905 2N2906/2907 2N3485/3486 N3486
Abstract: N AUER PHILIPS/DISCRETE bbS3^31 D02fiU4 blS I APX b'lE T > 2N2904 2N2904A SILICON , ) 2N2904 2N2904A Collector-emitter voltage (open base) Collector current (d.c.) 40 to 120 , SSI * A P X 2N2904 2N2904A RATINGS Limiting values in accordance with the Absolute Maximum , < 100 mA Emitter-base voltage (open collector) - v CBO 2N2904 2N2904A max. 60 V - V CE0 , /W N AMER PHILIPS/DISCRETE b^E bb53T31 Q D 2flllb UT6 2N2904 2N2904A » Silicon -
OCR Scan
S3T31
Abstract: 5290 e-mail sales@cdil.com www.cdil.com 2N2904_05Rev270302D Continental Device India Limited , Certified Manufacturer PNP SILICON PLANAR SWITCHING TRANSISTORS 2N2904 2N2905 TO-39 Metal Can , =25ºC unless specified otherwise) SYMBOL 2N2904, 05 UNITS Collector Emitter Voltage VCEO 40 , India Limited Data Sheet Page 1 of 4 PNP SILICON PLANAR SWITCHING TRANSISTORS 2N2904 2N2905 , ) DESCRIPTION DC Current Gain SYMBOL hFE TEST CONDITION 2N2904 MIN MAX IC=0.1mA, VCE=10V IC Continental Device India
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QSC/L-000019 C-120 270302D
Abstract: "2N2904" Semelab Home Datasheets are downloaded as Acrobat PDF files. Bipolar Products PRODUCT 2N2904 2N2904A 2N2904ACSM 2N2904A-JQR-B 2N2904AL 2N2904CSM 2N2904DCSM 2N2904-JQR-B 2N2904L Polarity PNP , 2N2904 MECHANICAL DATA Dimensions in mm (inches) 8.51 (0.34) 9.40 (0.37) GENERAL PURPOSE PNP TRANSISTOR 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) FEATURES 12.70 (0.500) min. 0.89 max , . E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk Document Number 3062 Issue 1 2N2904 Semelab
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200MH
Abstract: >30 *Pulse Test: Pulse Width < 300us, Duty Cycle < 2% u 2N2904_2905Rev_1 310303E Continental , extrapolates to unity. 2N2904_2905Rev_1 310303E Continental Device India Limited Data Sheet UNIT V , 3" x 7.5" x 7.5" 20K 17" x 15" x 13.5" 32K 40 kgs 2N2904_2905Rev_1 310303E , Fax + 91-11-2579 5290, 4141 1119 emai@cdil.com, www.cdilsemi.com 2N2904_2905Rev_1 310303E , SILICON PLANAR SWITCHING TRANSISTORS 2N2904 2N2905 TO-39 Metal Can Package General Purpose Continental Device India
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2n2905 configuration 2905R
Abstract: >30 *Pulse Test: Pulse Width < 300us, Duty Cycle < 2% u 2N2904_2905Rev_1 310303E Continental , extrapolates to unity. 2N2904_2905Rev_1 310303E Continental Device India Limited Data Sheet UNIT V , 3" x 7.5" x 7.5" 20K 17" x 15" x 13.5" 32K 40 kgs 2N2904_2905Rev_1 310303E , 2N2904_2905Rev_1 310303E Continental Device India Limited Data Sheet Page 4 of 4 Continental Device , PLANAR SWITCHING TRANSISTORS 2N2904 2N2905 TO-39 Metal Can Package General Purpose Continental Device India
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2N2904 application notes ISO/TS16949
Abstract: 2N2904_2905Rev310303E Continental Device India Limited Data Sheet Page 3 of 4 Notes 2N2904 2N2905 , 2N2904_2905Rev310303E Continental Device India Limited Data Sheet Page 1 of 4 PNP SILICON PLANAR SWITCHING , at which /hfe/ extrapolates to unity. 2N2904_2905Rev310303E Continental Device India Limited , 2N2904_2905Rev310303E Continental Device India Limited Data Sheet Page 4 of 4 Continental Device India , Certified Manufacturer PNP SILICON PLANAR SWITCHING TRANSISTORS 2N2904 2N2905 TO-39 Metal Can Continental Device India
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Abstract: " SEMICONDUCTOR! TECHNICAL DATA 2N2904. 2N2904A, 2N2905 2N2905A PNP Silicon Small-Signal , Voltage11) (IC = 10 mAdc. Ie = 0) v (BR|CEO 2N2904. 2N2905 2N2904A. 2N2905A v (BR)CBO v (BR)EBO 'CBO 2N2904. 2N2905 2N2904A. 2N2905A 2N2904. 2N2905 2N2904A. 2N2905A 0 02 0 01 20 10 -continued-. Symbol Min , CHARACTERISTICS DC Current GainO) (IC . 0.1 mAdc. VCF - '0 Vdc) hFE 2N2904 2N2905 2N2904A 2N2905A 2N2904 2N290S 2N2904A 2N2905A 2N2904 2N290S 2N2904A 2N2905A 2N2904.2N2904A 2N2905. 2N2905A 2N2904 2N2905 2N2904A 2N2905A -
OCR Scan
ic 2904 ir 2905 2904 2905 2904 d N2905
Abstract: TECHNICAL DATA PNP SWITCHING SILICON TRANSISTOR Qualified per MIL-PRF-19500/290 Devices 2N2904 , Temp. Range 2N2904 2N2904A, L 2N2905 2N2905A, L VCEO VCBO VEBO IC PT TJ, Tstg 40 60 , -205AD) 2N2904, 2N2904A 2N2905, 2N2905A THERMAL CHARACTERISTICS Characteristics Symbol Thermal Resistance , Vdc 2N2904, 2N2905 2N2904A, L, 2N2905A, L 2N2904, 2N2905 2N2904A, L, 2N2905A, L 2N2904, 2N2905 , 2N2904, 2N2904A, 2N2904AL, 2N2905, 2N2905A, 2N2905AL JAN SERIES ELECTRICAL CHARACTERISTICS (con't -
OCR Scan
2N 2905a pnp transistor st 2904 2905 transistor CI 2904 2905a transistor 2n 2905a
Abstract: per MIL-PRF-19500/290 DEVICES LEVELS 2N2904 2N2904A 2N2904AL JAN JANTX JANTXV JANS , 2N2904 2N2905 2N2904A, L 2N2905A, L Unit Collector-Emitter Voltage VCEO 40 60 Vdc , 3.43W/°C for TA > +25°C 2/ Derate linearly 17.2W/°C for TC > +25°C TO-39 (TO-205AD) 2N2904, 2N2904A , Conditions OFF CHARACTERTICS Collector-Emitter Breakdown Current IC = 10mAdc 2N2904, 2N2905 2N2904A, 2N2905A / AL Collector-Emitter Cutoff Voltage 2N2904, 2N2905 VCE = 40Vdc 2N2904A, 2N2905A / AL VCE = -
OCR Scan
Q62702-F65 Q62702-F66 k 942 K942 N 2904 VCC-10V C-30V
Abstract: 0.40 @ 10 0.40 @ 10 0.25 @ 5 2N2904 2N2906 2N2905 2N2904 2N2904 ?N?Qf)4 2N2904 2N2904 2N2905AJ/5 2N2904 2N2904A 2N2904A 2N2904A 2N2904A 2N3250A 2N2905AJ/5 2N2907AJ A 2N2904A 2N2904A 2N2904A 2N2904A STMicroelectronics
Original
2N2904-2N2905-2N2906-2N2907 2N2906 equivalent data sheet transistor 2n2907 equivalent 2n2906 2N2907 Transistor 2n2907 metal can 2N2904/2N2905 2N2906/2N2907 P008B
Abstract: Certified Manufacturer PNP SILICON PLANAR SWITCHING TRANSISTORS 2N2904 2N2905 TO-39 Metal Can , =25ºC unless specified otherwise) SYMBOL 2N2904, 05 UNITS Collector Emitter Voltage VCEO 40 , India Limited Data Sheet Page 1 of 4 PNP SILICON PLANAR SWITCHING TRANSISTORS 2N2904 2N2905 , ) DESCRIPTION DC Current Gain SYMBOL hFE TEST CONDITION 2N2904 MIN MAX IC=0.1mA, VCE=10V IC , 2N2904 2N2905 TO-39 Metal Can Package TO-39 Metal Can Package A DIM A B C D E F G H J K -
OCR Scan
TI 2905 2907 a 2907
Abstract: Data Sheet 2N2904 ^m M â'žâ  | , â  mâ"¢ 2N2904A COilFPHI 2N2905 WdlLl HI , DESCRIPTION The CENTRAL SEMICONDUCTOR 2N2904,A,2N2905,A are Silicon PNP Planar Epitaxial Transistors designed , Conditions 2N2904 2N2904A 2N2905 2N2905A UNIT 60 60 Vdc 5.0 5.0 Vdc 40 60 Vdc 600 mAdc 0.6 watts 3.0 watts -65 to +200°C 2N2904 2N2904A 2N2905 2N2905A Min Max Min Max Unit iCBO , 1.6 V VBE(s) IC=150mA, 1B=15mA 1.3 1.3 V VBE(s) IC=500mA, lB=50mA 2.6 2.6 V 2N2904 2N2905 -
OCR Scan
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