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Part : 2N2894 Supplier : Motorola Manufacturer : basicEparts Stock : 90 Best Price : - Price Each : -
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2N2894 Datasheet

Part Manufacturer Description PDF Type
2N2894 Central Semiconductor Leaded Small Signal Transistor General Purpose - Pol=PNP / Pkg=TO18 / Vceo=12 / Ic=0.2 / Hfe=40-150 / fT(Hz)=400M / Pwr(W)=0.36 Original
2N2894 Semelab PNP Silicon Transistor - Pol=PNP / Pkg=TO18 / Vceo=12 / Ic=0.2 / Hfe=40-150 / fT(Hz)=400M / Pwr(W)=0.36 Original
2N2894 Semelab PNP SILICON TRANSISTOR Original
2N2894 Central Semiconductor PNP METAL CAN Transistors Scan
2N2894 Continental Device India Semiconductor Device Data Book 1996 Scan
2N2894 Crimson Semiconductor Transistor Selection Guide Scan
2N2894 Fairchild Semiconductor Misc. Data Book Scans 1975/76 Scan
2N2894 Fairchild Semiconductor Full Line Condensed Catalogue 1977 Scan
2N2894 Ferranti Semiconductors Quick Reference Guide 1985 Scan
2N2894 Ferranti Semiconductors Shortform Data Book 1971 Scan
2N2894 Ferranti Semiconductors Metal Can Transistors (Short Form) Scan
2N2894 General Diode Transistor Selection Guide Scan
2N2894 General Transistor Small Signal Transistor Selection Guide Scan
2N2894 ITT Semiconductors Semiconductor Summary 1969 Scan
2N2894 Motorola Motorola Semiconductor Datasheet Library Scan
2N2894 Motorola European Master Selection Guide 1986 Scan
2N2894 Motorola The European Selection Data Book 1976 Scan
2N2894 Motorola PNP SILICON SWITCHING TRANSISTOR - Pol=PNP / Pkg=TO18 / Vceo=12 / Ic=0.2 / Hfe=40-150 / fT(Hz)=400M / Pwr(W)=0.36 Scan
2N2894 N/A Basic Transistor and Cross Reference Specification Scan
2N2894 N/A Transistor Shortform Datasheet & Cross References Scan
Showing first 20 results.

2N2894

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: W W - 65 to 200 °C 1/4 321 S 6 S-THOMSON 2N2894-2N3209_â'" 3GE  ,  ! 2N2894-2N3209 «à S \J S-THOMSON G a - I nVIIJVII , E L E C T R IC A L C H A R A C T E R IS T IC S , Characteristics. / S 7 SCS-THOMSON 3/4 # sMCHoajc m a n cg 323 2N2894-2N3209 3GE » resi uircuit , 30E ]> n T'ìs'ìea? e m a n a i b m , 2N2894 2N3209 f Z 7 SGS-THOMSON ^ 7 # , D E S C R IP T IO N The 2N2894, and 2N3209 are silicon planar epi­ taxial PNP transistors in -
OCR Scan
QQ31141
Abstract: : (973) 376-8960 U.SA 2N2894 2N3209 HIGH-SPEED SATURATED SWITCHES DESCRIPTION The 2N2894, and , - fiBM ABSOLUTE MAXIMUM RATINGS Value Parameter Symbol 2N2894 Unit 2N3209 Vcao , E =0) (for 2N2894 only) Collector Cutoff Current , V -12 -20 V V -12 -20 V V ~4 IE = -100 pA for 2N2894 Ic â'¢- 10 mA Ic -30 , 100mA lc=-10mA for 2N2894 for 2N3209 lc=-30mA for 2N2894 for 2M3209 lo â'" 100mA for2N2894 New Jersey Semiconductor
Original
2N2B94
Abstract: more information. 2N2894-2M3209 3QE » THERMAL DATA S G S-THOMSON 7cI2ci237 0031140 2 T-Jy^à , to visit ChipDocs web site for more information. 2N2894-2N3209 3CE D â  resi uircun ror Ton, toff , 3QE D B T^E^S? 003113^ b Wà . SGS-THOMSON \u 1 2N2894 2N3209 S G S-THOMSON HIGH-SPEED SATURATED SWITCHES DESCRIPTION The 2N2894, and 2N3209 are silicon planar epitaxial PNP transistors in , ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit 2N2894 2N3209 VcBO Collector-base Voltage (lE = -
OCR Scan
g3105 G-3105 D031142 S-4621
Abstract: 2N2894 Silicon PNP Transistor Intended For High-speed Low Saturation. http://store.americanmicrosemiconductor.com/2n2894.html Home Online Store Diodes Transistors Integrated Circuits Optoelectronics Thyristors Part Number: 2N2894 2N2894 Silic o n PNP Trans is t o r Int ended For High- speed Lo w Saturat io n Sw itc hing Applic at io ns Up To 1 0 0 M A Enter code INTER3 at checkout.* CUSTOMER , Price: Our Price: You Save: Americanmicrosemi 2N2894 $ 7.46 $ 5.97 $ 1.49 Total Price $ 5.97 American Microsemiconductor
Original
n1212 2N2894A
Abstract: beginning "2N2894-JQR" Semelab Home Datasheets are downloaded as Acrobat PDF files. Bipolar Products PRODUCT 2N2894-JQR-B Polarity PNP Package TO18 VCEO 12V IC(cont) 0.2A HFE(min) 40 HFE(max) 150 @ , 2N2894 MECHANICAL DATA Dimensions in mm (inches) 5.84 (0.230) 5.31 (0.209) 4.95 (0.195) 4.52 (0.178) PNP SILICON TRANSISTOR FEATURES · SILICON PNP TRANSISTOR · HIGH SPEED, LOW SATURATION SWITCH , 4V 200mA 360mW 2.06mW / °C 12W 6.85mW / °C ­65 to +200°C Semelab plc. Prelim. 4/99 2N2894 Semelab
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100MH 140KH 400MH
Abstract: beginning "2N2894" Semelab Home Datasheets are downloaded as Acrobat PDF files. Bipolar Products PRODUCT 2N2894 2N2894A 2N2894ACSM 2N2894A-JQR-B 2N2894CSM 2N2894CSM-JQR-B 2N2894DCSM 2N2894-JQR-B 2N2894L , 2N2894 MECHANICAL DATA Dimensions in mm (inches) 5.84 (0.230) 5.31 (0.209) 4.95 (0.195) 4.52 , 4V 200mA 360mW 2.06mW / °C 12W 6.85mW / °C ­65 to +200°C Semelab plc. Prelim. 4/99 2N2894 , (cont) HFE(min) HFE(max) @ VCE/IC FT Search Results FET: Diode: 2N2894AQF Quad Transistor Quad Semelab
Original
12v switching transistor 2n2894 transistor 036w 800MH
Abstract: a, -10 ß a , -100 f ia . - ` ». lc = 0 TA = m °c lE = 0 l, = 0, See Note 4 2N3012 2N2894 UNIT , 2N2894, 2N3012 P-N-P SILICON TRANSISTORS 'e le c tric a l characteristics a t 25°C fre e -a ir tem p , , V C E = - 1 0 v , l c = -30 m a, f = 100 Me 4 TEST CONDITIONS 2N2894 2N3012 MIN MAX MIN MAX , | | | | - -1,5 me, 1*5 ma, 2N2894 MAX 40 2N3012 M AX -
OCR Scan
2N3012M
Abstract: 2N2894 PNP SILICON TRANSISTOR MECHANICAL DATA Dimensions in mm (inches) 5.84 (0.230) 5.31 (0.209) FEATURES 4.95 (0.195) 4.52 (0.178) · SILICON PNP TRANSISTOR 5.33 (0.210) 4.32 (0.170) · HIGH SPEED, LOW SATURATION SWITCH 12.7 (0.500) min. APPLICATIONS: 0.48 (0.019) 0.41 (0.016) dia. GENERAL PURPOSE SWITCHING APPLICATIONS 2.54 (0.100) Nom. 3 1 2 TO18 , : sales@semelab.co.uk Website: http://www.semelab.co.uk Document Number 4081 Issue 1 2N2894 ELECTRICAL Semelab
Original
ic 4081 datasheet IC 4081 data sheet features of ic 4081 ic 4081 ic and 4081 coms 4081
Abstract: 2N2894 PNP SILICON TRANSISTOR MECHANICAL DATA Dimensions in mm (inches) 5.84 (0.230) 5.31 (0.209) FEATURES 4.95 (0.195) 4.52 (0.178) · SILICON PNP TRANSISTOR 5.33 (0.210) 4.32 (0.170) · HIGH SPEED, LOW SATURATION SWITCH 12.7 (0.500) min. APPLICATIONS: 0.48 (0.019) 0.41 (0.016) dia. GENERAL PURPOSE SWITCHING APPLICATIONS 2.54 (0.100) Nom. 3 1 2 TO18 , 2.06mW / °C 12W 6.85mW / °C ­65 to +200°C Prelim. 4/99 2N2894 ELECTRICAL CHARACTERISTICS (TA Semelab
Original
TRANSISTOR 533
Abstract: NPN 2N2894 HIGH-SPEED SATURATED SWITCHES The 2N2894 are silicon planar epitaxial PNP transistors mounted in TO-18 metal package. They are intended for high speed, low saturation switching applications up to 100 mA. Compliance to RoHS. ABSOLUTE MAXIMUM RATINGS Symbol Unit -12 -12 -12 -4 -200 0.36 V V V V mA @ Tcase= 25° 1.2 Watts @ Tcase , V V 1/2 NPN 2N2894 Symbol hFE (*) Ratings Min IC =-10 mA, VCE =-0.3 V IC =-30 mA Comset Semiconductors
Original
Abstract: BZX88-C9V1 Z8 15 BSV37 S4 2N2894 BS9365 F039 14 BZX88-C10 Z9 15 BZX88-C11 Y1 15 BZX88-C12 Y2 , -18 ZT87 2N2894 12 200 0.15 10 1 40 150 30 400 30 60 90 30 TO-18 - "Typical MC7 ELECTRICAL , 150 15 200 8 G7 2N2907 60 40 45 100 100 300 150 10 0.4 150 15 200 8 G7 2N2894 12 12 60 90 40 150 30 -
OCR Scan
BFS36 2N930 BAW63 BS9302 BFS36A 2N929 2N2907 equivalent ferranti micro-e f025 equivalent for 2N2219 BZX88C18 BSS56
Abstract: mA W W °c 1/6 October 1988 2N2894-2N 3209 THERMAL DATA Ri h j-case Rlh ]-amb Thermal , giuieirR@ ffiiD es 3/6 2N2894-2N 3209 Test Circuit tor to n , toff. BB fC C = -2.0V , 0016043 T oüooeß6i SGS-THOMSON Ä7# giuieirR@ ffiiDes 5/6 2N2894-2N 3209 Information furnished , SGS-THOMSON R fl0 » )[iyiM ® !0 (gi DESCRIPTION The 2N2894, and 2N3209 are silicon planar epitax , plications up to 100 mA. Products approved to CECC 50004-022/023 available on request. 2N2894 2N3209 -
OCR Scan
3209 2894-2N
Abstract: -46 2N3737# 48 60 1000 50 1500 20 1000 0.5 500 50 250 50 PNP TO-18 2N2894 60 90 30 12 200 40 30 0.2 30 3.0 , (CECC) 2N1893 (CECC) 2N2484 (CECC) 2N4033 (CECC) 2N2218 (CECC) 2N2894 (CECC) 2N5415 (CECC) 2N2218A -
OCR Scan
CV8616 2N2369At 2N2222A motorola 2N3440 MOTOROLA 2N3439 MOTOROLA 2N1893 motorola MIL-19500 2N4014 2N2369 2N2369A 2N3227 BSX20
Abstract: -25 -20 -5 0-10 0-30 -10 40 120 -10 140 -10 -10 -02 2N2894 T018 PE -12 -12 -4 020 0-36 -30 40 150 -30 , at 10 mA 'off 90nS max. (2N2894) NOTE 1: The following symbols have been used throughout the -
OCR Scan
2N2483 2S501 2S502 2S503 2N3707 2N3709 silect N4060 bc182l N2484
Abstract: 65 2N2894 12 360 (90) 30 30 150 30 0.2 30 400 6.0 35323F 65 2 N2894A 12 360 20 10 40 120 30 0.19 30 , 34348d 66 2N2894 12 â'" â'" 90 30-150 30 34345x 65 2N3209 20 â'" â'" 90 30-120 30 34346h 65 PNP -
OCR Scan
BSX29 2N5023 2N4358 AF239 AD142 AD143 GERMANIUM SMALL SIGNAL TRANSISTORS GERMANIUM SMALL SIGNAL PNP TRANSISTORS AU113 35322H 35324D 35325B 35326X
Abstract: 120* 250* 20 TO-18 ZT87 2N2894 12 200 0 -15 10 1 40 150 30 400 30 60 90 30 TO-18 â'" * Typical 13 , » 20 T018 ZT87 2N2894 12 200 0-15 10 1 40 150 30 400 30 60 90 30 T018 â'" â'¢ Typical 13 -
OCR Scan
ZT189 2N4036 2N2102 2N2904A N2905A 2N2219A N2905 N2907 bcy592 T0-18
Abstract: * 20 TO-18 ZT87 2N2894 12 200 0.15 10 1 40 150 30 400 30 60 90 30 TO-18 - 'Typical 11-5 , 40 40 70 300 100 300 10 1 0.4 50 5 250 5 G7 2N2894 12 12 60 90 40 150 30 0.5 0.2 30 3 400 6 G8 -
OCR Scan
BFX30 BFX29 2N2905A 2N2906A BSV16 2N2219 transistor 2N2221A 2N2907A
Abstract: BZX88-C9V1 Z8 15 BSV37 S4 2N2894 BS9365 F039 14 BZX88-C10 Z9 15 BZX88-C11 Y1 15 BZX88-C12 Y2 , 150 15 200 8 G7 2N2907 60 40 45 100 100 300 150 10 0.4 150 15 200 8 G7 2N2894 12 12 60 90 40 150 30 -
OCR Scan
BAW63A 2N2475 2N2369 equivalent BZX88-C18 ic marking z7 BFS37 2N2605 BAW63B BFS37A 2N2604
Abstract: Temperature ­ 4 V ­ 200 mA 0.36 1.2 W W ­ 65 to 200 °C 1/6 2N2894-2N3209 , pF 2N2894-2N3209 ELECTRICAL CHARACTERISTICS (continued) Symbol C CBO Parameter , Characteristics. 3/6 2N2894-2N3209 Test Circuit for ton, toff. PULSE GENERATOR : tr, 1.0 ns DC < 2 % , OSCILLOSCOPE : tr < 1.0 ns ZIN 100 K 2N2894-2N3209 TO-18 MECHANICAL DATA mm inch DIM. MIN. A , L 45o 45o D A G I E F H B L C 0016043 5/6 2N2894-2N3209 STMicroelectronics
Original
PW 2N 2n320
Abstract: 2N2894 Transistors Si PNP LP HF BJT Military/High-RelN V(BR)CEO (V)12 V(BR)CBO (V)12 I(C) Max. (A)200m Absolute Max. Power Diss. (W)1.2 Maximum Operating Temp (øC)175Ãu I(CBO) Max. (A)10u @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.40 h(FE) Max. Current gain.150 @I(C) (A) (Test Condition)30m @V(CE) (V) (Test Condition).50 f(T) Min. (Hz) Transition Freq @I(C) (A) (Test Condition) @V(CE) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition) @I(B) (A) (Test Condition American Microsemiconductor
Original
Abstract: : (973) 376-8960 U.SA 2N2894 2N3209 HIGH-SPEED SATURATED SWITCHES DESCRIPTION The 2N2894, and , - fiBM ABSOLUTE MAXIMUM RATINGS Value Parameter Symbol 2N2894 Unit 2N3209 Vcao , E =0) (for 2N2894 only) Collector Cutoff Current , V -12 -20 V V -12 -20 V V ~4 IE = -100 pA for 2N2894 Ic â'¢- 10 mA Ic -30 , 100mA lc=-10mA for 2N2894 for 2N3209 lc=-30mA for 2N2894 for 2M3209 lo â'" 100mA for2N2894 -
OCR Scan
3012
Abstract: 3QE D B T^E^S? 003113^ b Wà . SGS-THOMSON \u 1 2N2894 2N3209 S G S-THOMSON HIGH-SPEED SATURATED SWITCHES DESCRIPTION The 2N2894, and 2N3209 are silicon planar epitaxial PNP transistors in , ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit 2N2894 2N3209 VcBO Collector-base Voltage (lE = , Parameter Test Conditions Min. Typ- Max. Icbo Collector Cutoff Current (lE =0) (for 2N2894 only) Vcb = - 6 V Tamb = 125 °C - 10 Ices Collector Cutoff Current (Vbe =0) for 2N2894 VCE=-6 V for -
OCR Scan
2H3209 2N30I2
Abstract: 2N2894 MECHANICAL DATA Dimensions in mm (inches) 5.84 (0.230) 5.31 (0.209) 4.95 (0.195) 4.52 (0.178) PNP SILICON TRANSISTOR FEATURES · SILICON PNP TRANSISTOR · HIGH SPEED, LOW SATURATION SWITCH , 4V 200mA 360mW 2.06mW / °C 12W 6.85mW / °C ­65 to +200°C Semelab plc. Prelim. 4/99 2N2894 , beginning "2N2894" Semelab Home Datasheets are downloaded as Acrobat PDF files. Bipolar Products PRODUCT 2N2894 2N2894A 2N2894ACSM 2N2894A-JQR-B 2N2894CSM 2N2894CSM-JQR-B 2N2894DCSM 2N2894-JQR-B 2N2894L -
OCR Scan
NS2N
Abstract: BZX88-C9V1 Z8 15 BSV37 S4 2N2894 BS9365 F039 14 BZX88-C10 Z9 15 BZX88-C11 Y1 15 BZX88-C12 Y2 , -18 ZT87 2N2894 12 200 0.15 10 1 40 150 30 400 30 60 90 30 TO-18 - "Typical MC7 ELECTRICAL , 150 15 200 8 G7 2N2907 60 40 45 100 100 300 150 10 0.4 150 15 200 8 G7 2N2894 12 12 60 90 40 150 30 -
OCR Scan
2n 2894 D 2894 transistor 2894 k 30 transistor
Abstract: NPN 2N2894 HIGH-SPEED SATURATED SWITCHES The 2N2894 are silicon planar epitaxial PNP transistors mounted in TO-18 metal package. They are intended for high speed, low saturation switching applications up to 100 mA. Compliance to RoHS. ABSOLUTE MAXIMUM RATINGS Symbol Unit -12 -12 -12 -4 -200 0.36 V V V V mA @ Tcase= 25° 1.2 Watts @ Tcase , V V 1/2 NPN 2N2894 Symbol hFE (*) Ratings Min IC =-10 mA, VCE =-0.3 V IC =-30 mA -
OCR Scan
S02222 S02907 2907A EQUIVALENT 2222A 2907 transistor 4393 s0918 BFQ22 equivalent 2N918 S0918 S02369 SOR2907A
Showing first 20 results.