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2N2812 Datasheet

Part Manufacturer Description PDF Type
2N2812 API Electronics NPN Transistors Scan
2N2812 API Electronics Short form transistor data Scan
2N2812 API Electronics Short form transistor data Scan
2N2812 Diode Transistor NPN Transistor Selection Guide - TO-111 and TO-61 Packages Scan
2N2812 Diode Transistor Transistor Short Form Data Scan
2N2812 General Semiconductor Low Frequency Silicon Power NPN Transistor Scan
2N2812 General Transistor Power Transistor Selection Guide Scan
2N2812 Motorola Motorola Semiconductor Datasheet Library Scan
2N2812 N/A Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Scan
2N2812 N/A Transistor Shortform Datasheet & Cross References Scan
2N2812 N/A Basic Transistor and Cross Reference Specification Scan
2N2812 N/A Shortform Transistor PDF Datasheet Scan
2N2812 N/A GE Transistor Specifications Scan
2N2812 N/A Catalog Scans - Shortform Datasheet Scan
2N2812 N/A Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan
2N2812 N/A Semiconductor Master Cross Reference Guide Scan
2N2812 N/A Shortform Transistor Datasheet Guide Scan
2N2812 N/A Vintage Transistor Datasheets Scan
2N2812 New England Semiconductor Low Frequency Silicon Power NPN Transistor, TO-61 Scan
2N2812 New England Semiconductor BIPOLAR NPN TRANSISTOR TO-61 Scan
Showing first 20 results.

2N2812

Catalog Datasheet MFG & Type PDF Document Tags

ic SL 1626

Abstract: 100C , HIGH-POWER TYPES 2N2812 AND 2N2814 JAN, JANTX, AND JANTXV Inactive for new design after 7 June 1999. This , TSTG and TOP W 2N2812 2N2814 W V dc V dc V dc A dc A dc °C/W °C 4.0 , 2071 n = 45 devices, c = 0 Breakdown voltage, collector to emitter 2N2812 2N2814 3011 , 2N2812 2N2814 3011 Breakdown voltage, collector to base 2N2812 2N2814 3001 Breakdown , current 2N2812 2N2814 3041 Bias condition A; VEB = 0.5 V dc ICEX1 Collector to base cutoff
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Original
ic SL 1626 100C MIL-PRF-19500/415A MIL-S-19500/415 MIL-PRF-19500

on 5295 transistor

Abstract: on 5295 equivalents 2N2812, AND 2N2814 JAN, AND JANTX MIL-S-19500/415(USAF) Amendment 2, dated 18 April 1973, has been , , HIGH-POWER TYPES 2N2812 AND 2N2814 NON-TX, TX, AND TXV" ♦1.1: Delete and substitute: "1.1 Scope. This , ° c pT 2/ Tc = 100° c vcbo Vebo vceo ic Ià 1 TC W W Vdc Vdc Vdc Ade 1Ç 2N2812 4.0 50 80 8.0 60 , examination Subgroup 2 Breakdown voltage, collector to emitter 2N2812 2N2814 Breakdown voltage, collector to emitter 2N2812 2N2814 Breakdown voltage, collector to base 2N2812 2N2814 Breakdown voltage
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OCR Scan
JAN2N2812 JAN2N2814 JANTX2N2814 on 5295 transistor on 5295 equivalents JANTX2N28 transistors substitute JANTX2N2812 0003SES MIL-S-19500
Abstract: 2N1725 2N2811 2N2812 JA N 2N2812 JT X 2N2812 JT X V 2N2812 2N2813 2N2814 JA N 2N2814 JT X -
OCR Scan
2N3878 2N3879 2N5202 2N5326 2N5346 2N5348

2N3442

Abstract: 2N1724A -61 80 60 8 20 60 5 5 .5 1.2 5 .5 2 30 2N2812 TO-61 80 60 8 40 120 5 5 .5 1.2 5 .5 2 30 JAN TO-61 80 60 8 40 120 5 5 .5 1.2 5 .5 2 30 2N2812 JTX TO-61 80 60 8 40 120 5 5 .5 1.2 5 .5 2 30 2N2812 JTXV TO-61 80 60 8 40 120 5 5 .5 1.2 5 .5 2 30 2N2812 2N2813 TO
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OCR Scan
2N5349 2N3773 2N1724 2N1724A 2N3442 2N3445 TO61

L3713

Abstract: SDT9309 1.20 5.0 .500 2N2812 TO-61 80 60 8.0 40 120 5.0 5.0 .50 1.20 5.0 .500 2N2813 TO-61 120 80 8.0 20 60 , 5.0 85 2N2811 30 5.0 85 2N2812 30 5.0 85 2N2813 30 5.0 85 2N2814 1.0 45 2 N 3442 30 5.0 85
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OCR Scan
2N3232 2N3233 2N3234 2N3863 2N3864 2N5387 L3713 SDT9309 SDT9301 SDT9304 2N41

2N3919c

Abstract: 2N3445 1 .4 2.2 1 COLLECTC> R CU RRENT = Device No 2N1724 2N.1724A 2N1725 2N2811 2N2812 JAN 2N2812 JTX 2N2812 JTXV 2N2812 2N2813 2N2814 JAN 2N2814 JT X 2N2814 JTXV 2N2814 2N3442 JAN * 2N3442 2N3445
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OCR Scan
2N3919c 2N3446 2N3447 2N3448 2N3487 2N3488 2N3489

2N3919c

Abstract: 8 8 1 .2 COLLECTOR CURRENT = D evice No 2N1724 2N1724A 2N1725 2N2811 2N2812 JAN 2N2812 JT X 2N2812 JTXV 2N2812 2N2813 2N2814 JAN 2N2814 JT X 2N2814 JTXV 2N2814 2N3442 JAN · 2N3442 2N3445
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OCR Scan
2NS349 2N3490 2N3491 2N3492 2N3628 2N3629

2N2812

Abstract: 2N1724A -61 80 60 8 20 60 5 5 .5 1.2 5 .5 2 30 2N2812 TO-61 80 60 8 40 120 5 5 .5 1.2 5 .5 2 30 JAN TO-61 80 60 8 40 120 5 5 .5 1.2 5 .5 2 30 2N2812 JTX TO-61 80 60 8 40 120 5 5 .5 1.2 5 .5 2 30 2N2812 JTXV TO-61 80 60 8 40 120 5 5 .5 1.2 5 .5 2 30 2N2812 2N2813 TO
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OCR Scan
2N2814 JAN 2N3630 2N3919 Q0435TE
Abstract: ISCFdÈ ¦ JJ ¦ JJ text/html About keyword search: News Contact Employment Site Home part number search: 2N2812 (#23001) NPN Transistor Division Mil-Spec Shipping Lawrence (none) (none) Datasheet Qual Data (none) Contact Microsemi Symbol Power IC BV(CBO) VCEO BVEBO Max 70 10 80 60 8 Unit W A V V V RFQ/Sample Package TO-61(STD) Maximum Electrical Rating Power Dissipation Collector Current Breakdown Voltage Collector -to-Base Voltage Collector to Emitter Open Voltage Emitter to Microsemi
Original

J402

Abstract: 2N2814 twill *> ¡¿oí 0043592 A P.I ELECTRONICS INC 13A0109 7-33-// - ~Ï3 DE |0D43STa ODDOIOT 3 PGÌ335 thru PGÌ337 10 AMP NPN PLANAR o TO-61 o 40 WATT @ 25° C o 60 MHz (typical) o PREMIUM GRADE MAXIMUM RATINGS @ 25°C AMBIENT RATING ^ PG1335 â  JZN^ÃlJ_2M2813XPG1336 , 2N2812 2N2814^PG1337 ' ELECTRICAL CHARACTERISTICS @ 25°C SYMBOL hFE* LIMIT CE (sat) BE CONDITIONS c = .01A, VCE = 5V C = 5A, Vce = 5V c = 10A, VCE =5V C = 5A, Vce=5V,Tc = -55OC C = 5A, lB=0.5A C = 10A, lB = 1A
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OCR Scan
PG1336 J402 0D43ST

4116 2n

Abstract: j 5804 DEVICE NUMBER INDEX i DEVI CE N O. 2N1252 2N1253 2N1506 2N1506A 2N1714 2N1715 2N1716 2N1717 2NI718 2N1719 2N1720 2N1721 2N1724 2N1724A 2N1725 2N1889 2N1890 2N1974 2N1975 2N2150 2N2151 2N2Ó57 2N2658 2N2811 2N2812 JA N 2N2812 J T X 2N2812 J T X V 2N2812 2N2813 2N2814 J A N 2N2814 J T X 2N2814 JT X V 2N2814 2N2823 2N2824 2N2825 2N2849 2N2849-1 2N2849-2 2N2849-3 2N2850 2N2830-1 2N2850-2 2N2850-3 PAGE 11 11 11 11 11 DE VI CE NO. 2N2851-3 2N2852 2N2852-1 2N2852-2 2N2852-3 2N2853 2N2853-1 2N2853-2 2N2853-3
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OCR Scan
2N2891 2N3186 4116 2n j 5804 2N3920 tr j 5804 2N375 N5339 2N2854 2N2854-1 2N2854-2 2N2854-3 2N2855 2N2855-
Abstract: COLLECTOR CURRENT = 10 AMPS NPN TYPES Device No 2N1724 2N1724A 2N1725 2N2811 2N2812 JAN 2N2812 JTX 2N2812 JTXV 2N2812 2N2813 2N2814 JAN 2N2814 JTX 2N2814 JTXV 2N2814 2N3442 JAN * 2N3442 2N3445 2N3446 2N3447 -
OCR Scan
Abstract: 2N2812+JANTXV Transistors Si NPN Power BJT Military/High-RelY V(BR)CEO (V)60 V(BR)CBO (V)80 I(C) Max. (A)10 Absolute Max. Power Diss. (W)70 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)100nØ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition) @I(B) (A) (Test Condition) h(FE) Min. Current gain.40 h(FE) Max. Current gain.120 @I(C) (A) (Test Condition)5.0 @V(CE) (V) (Test Condition)5.0 f(T) Min. (Hz) Transition Freq15M @I(C) (A) (Test Condition) @V(CE) (V American Microsemiconductor
Original

2N3487

Abstract: a/TO111 -61 2N2811 2N2812* 2N2813 2N2814* 2N3487 2N3488 2N3489 2N3490 2N3491 2N3492 50 50 70 70 60 80 100 60 80
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OCR Scan
a/TO111 80240 2N2877 2N2878 2N2879 2N3996 2N3997 2N2880

mil-s-19500

Abstract: 2N2814 S U M M A R Y LIST O F API Q .P.L. DIRECTORY TYPES 2N2812 - JAN, JAN-TX, JA N -T X V .MIL-S-19500/415 2N2814 - JAN, JAN-TX, JA N -T X V .MIL-S-19500/415 2 SECTION 2N2880 - JAN, JAN-TX, JA N -T X V .MIL-S-19500/315 2N3749 - JAN, JAN-TX, JA N -T X V .MIL-S-19500/315 2N3055 - JAN, JAN-TX, N / A
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OCR Scan
MIL-S-19500/407 2N3418 2N3419 2N3420 2N3421 MIL-S-19500/393
Abstract: 2N2812+JANTX Transistors Si NPN Power BJT Military/High-RelY V(BR)CEO (V)60 V(BR)CBO (V)80 I(C) Max. (A)10 Absolute Max. Power Diss. (W)70 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)100nØ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition) @I(B) (A) (Test Condition) h(FE) Min. Current gain.40 h(FE) Max. Current gain.120 @I(C) (A) (Test Condition)5.0 @V(CE) (V) (Test Condition)5.0 f(T) Min. (Hz) Transition Freq15M @I(C) (A) (Test Condition) @V(CE) (V American Microsemiconductor
Original

a/TO111

Abstract: 1 f 1 TO-59 Cj D 2N2880* 2N3998* T TO-61 2N3999* g[y 2N 2811 2N2812* 2N2813
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OCR Scan

POWER TRANSISTORS 10A 400v pnp

Abstract: NPN Transistor 10A 400V to3 10-A 2N2015 YES X X /248A 10-B 2N2016 YES X X /248A 10-B 2N2812 YES YES YES /415 10-B 2N2814 YES , Emitter Voltage (VCEO) 50V 2N2015 2N2812 60V 2N3715 2N5302 2N5685 65V 2N2016
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OCR Scan
2N389 2N1479 2N1489 2N6352 2N6350 POWER TRANSISTORS 10A 400v pnp NPN Transistor 10A 400V to3 pnp 400v 10a 2N1468 2NXXXX T-33- D0D07 19S00 2N424

MIL-S-19500

Abstract: 472 M Summary List of API Q.P.L. Directory Types 2N2812 - JAN, JAN-TX, JAN-TXV 2N2814 - JAN, JAN-TX, JAN-TXV 2N2880 - JAN. JAN-TX, JAN-TXV 2N3749 - JAN. JAN-TX, JAN-TXV 2N3055 - JAN. JAN-TX, JAN-TXV 2N3418 - JAN. JAN-TX, JAN-TXV 2N34I9 - JAN. JAN-TX, JAN-TXV 2N3420 - JAN, JAN-TX, JAN-TXV 2N3421 - JAN, JAN-TX. JAN-TXV 2N3442 - JAN. JAN-TX, JAN-TXV 2N3771 - JAN, JAN-TX, JAN-TXV 2N3772 - JAN. JAN-TX, JAl^-TXV 2N3996 - JAN, JAN-TX, JAN-TXV 2N3997 - JAN, JAN-TX, JAN-TXV 2N3998 - JAN, JAN-TX, JAN-TXV 2N3999 - JAN
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OCR Scan
472 M 2N3055 JANTX 2N4150 2N5237 2N5664 2N5665 2N5666 2N5667

2N1718

Abstract: 2N3171 2N2698 2N2811 2N2812 2N2813 2N2814 2N2849 2N2850 2N2851 2N2852 2N2853 2N2854 2N2855 2N2856 2N2877 2N2878
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OCR Scan
2N1718 2N2984 2N2995 2N3055C 2N3171 2N3172 2n3198 306XC001 306XC092 331XC002 331XC0CI3 333XC0D1 345XC0CI1

7182N

Abstract: 2n3920 S U M M A R Y LIST O F API Q .P.L. DIRECTORY TYPES 2N2812 - JAN, JAN-TX, JA N -T X V .MIL-S-19500/415 2N2814 - JAN, JAN-TX, JA N -T X V .MIL-S-19500/415 2 SECTION 2N2880 - JAN, JAN-TX, JA N -T X V .MIL-S-19500/315 2N3749 - JAN, JAN-TX, JA N -T X V .MIL-S-19500/315 2N3055 - JAN, JAN-TX, N / A
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OCR Scan
7182N 2N567 n4877 2N2850-1 2N2851-1 2N2851-2 2N2855-1 2N2856-1 2N2856--
Showing first 20 results.