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Part : 2N2646 Supplier : NTE Electronics Manufacturer : Newark element14 Stock : 555 Best Price : $5.51 Price Each : $6.59
Part : 2N2646 Supplier : SPC Multicomp Manufacturer : Newark element14 Stock : 2,192 Best Price : $1.19 Price Each : $3.27
Part : 2N2646 Supplier : New Jersey Semiconductor Manufacturer : Bristol Electronics Stock : 27,180 Best Price : $1.9837 Price Each : $4.8384
Part : 2N2646 Supplier : SPC Multicomp Manufacturer : element14 Asia-Pacific Stock : 4,977 Best Price : $1.64 Price Each : $2.5040
Part : 2N2646 Supplier : TT Electronics Manufacturer : Farnell element14 Stock : - Best Price : £1.46 Price Each : £2.71
Part : 2N2646 Supplier : SPC Multicomp Manufacturer : Farnell element14 Stock : 6,323 Best Price : £1.46 Price Each : £2.46
Part : 2N2646 Supplier : NTE Electronics Manufacturer : Master Electronics Stock : 10 Best Price : $5.55 Price Each : $6.45
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2N2646 Datasheet

Part Manufacturer Description PDF Type
2N2646 Advanced Semiconductor Silicon P-N Unijunction Transistor Original
2N2646 Comset Semiconductors Silicon Junction Transistors Original
2N2646 Advanced Semiconductor Silicon PN Unijunction Transistor Scan
2N2646 Boca Semiconductor Silicon PN Unijuction Transistor Scan
2N2646 Central Semiconductor UNIJUNCTION TRANSISTORS Scan
2N2646 Central Semiconductor Scan
2N2646 Digitron SILICON ANNULAR PN UNIJUNCTION TRANSISTORS Scan
2N2646 General Electric Semiconductor Data Book 1971 Scan
2N2646 General Electric Semiconductor Data Handbook 1977 Scan
2N2646 General Electric Silicon unijunction transistor. 30V, 50mA. Scan
2N2646 Motorola Motorola Semiconductor Datasheet Library Scan
2N2646 Motorola The European Selection Data Book 1976 Scan
2N2646 Motorola European Master Selection Guide 1986 Scan
2N2646 Motorola Silicon PN unijunction transistor. Scan
2N2646 N/A Basic Transistor and Cross Reference Specification Scan
2N2646 N/A GE Transistor Specifications Scan
2N2646 N/A Shortform Transistor PDF Datasheet Scan
2N2646 N/A GE Transistor Specifications Scan
2N2646 N/A Short Form Datasheet and Cross Reference Data Scan
2N2646 N/A Short Form Datasheet and Cross Reference Data Scan
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2N2646

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: 2N2646 2N2647 SILICON UNIJUNCTION TRANSISTORS Silicon Planar Unijunction Transistors have a , higher base-one peak pulse voltage. In addition, these devices are much faster switches. The 2N2646 , Temperature Capacitor discharge ­ 10uF or less, 30volts or less. 2N2646 2N2647 30 50 2 35 300 -65 to +125 -65 to +150 Unit V mA A V mW °C °C 2N2646 2N2647 ELECTRICAL CHARACTERISTICS , Ratings 2N2646 Intrinsic stand-off ratio VB2B1 = 10V 2N2647 Interbase Resistance , VB2B1 = 3V Comset Semiconductors
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High power SCR SCR 2N2646 2N2646 CIRCUIT transistor 2N2646 power scr TO-220 2N2646
Abstract: DIGITRON SEMICONDUCTORS 2N2646, 2N2647 SILICON UNIJUNCTION TRANSISTOR MAXIMUM RATINGS , ) Symbol 2N2646 2N2647 Interbase resistance (VB2B1 = 3V, IE = 0) Min Typ Max Unit Î , peak pulse voltage(3) %/°C Volts mA 2N2646 2N2647 IEB2O - 0.005 0.005 12 0.2 ÂuA 2N2646 2N2647 IP - 1 1 5 2 ÂuA 2N2646 2N2647 IV 4 8 6 10 18 mA VOB1 3 6 5 7 - volts 2N2646 2N2647 Note 1: Intrinsic standoff voltage: Î DIGITRON
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2N2646 transistor MIL-PRF-19500
Abstract: 2N2646 Spec Sheets Details Diodes, Transistors, Thyristors, Triacs, Dio. class="hl">2N2646 HOME | CATALOG | CART |EXPRESS CHECKOUT | PARTS WATCH | NEW , Category » Thyristors Buy 2N2646 at our online store! 2N2646 Availability Special Offers: FREE UPS Ground Shipping on Orders above $150.00 Lanuage Translator: 2N2646 Information Did you Know , Test Houses 2N2646 Specifications Military/High-Rel : N Absolute Max. Power Diss. (W) : 300m American Microsemiconductor
Original
2N2646 to18 STV3208 LM3909N LM3909 1N4510 2N1711
Abstract: 2N2646 2N2647 SILICON UNIJONCTION TRANSISTORS Silicon Planar Unijunction Transistors have a , higher base-one peak pulse voltage. In addition, these devices are much faster switches. The 2N2646 is , Ratings 2N2646 2N2647 VB1E Base 1 ­ Emitter Voltage 30 V VB2E Base 2 ­ Emitter , Current V(BR)B1E 2N2646 ­ 2N2647 Max uA 12 30 COMSET SEMICONDUCTORS V 1/2 2N2646 2N2647 Symbol 2N2646 ­ 2N2647 Ratings RBBO Intrinsic stand-off ratio VB1B2 = 10 V Comset Semiconductors
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2n2646 equivalent 2N2646 transistor datasheet 2n2646 2n2647 2n2646 of symbol rbbo 2N2646 datasheet
Abstract: DIGITRON SEMICONDUCTORS 2N2646, 2N2647 SILICON UNIJUNCTION TRANSISTOR MAXIMUM RATINGS , ) Symbol 2N2646 2N2647 Interbase resistance (VB2B1 = 3V, IE = 0) Min Typ Max Unit Î , peak pulse voltage(3) %/°C Volts mA 2N2646 2N2647 IEB2O - 0.005 0.005 12 0.2 ÂuA 2N2646 2N2647 IP - 1 1 5 2 ÂuA 2N2646 2N2647 IV 4 8 6 10 18 mA VOB1 3 6 5 7 - volts 2N2646 2N2647 Note 1: Intrinsic standoff voltage: Î DIGITRON
Original
Abstract: 2N2646.GES2646 2N2647.GES2647 MIN. TYP. MAX. MIN. TYP. MAX Intrinsic Standoff Ratio (VBB = 10 V , Transistors and Switches 2N2646, 2N2647, GES2646, GES2647 Silicon Unijunction Transistors TO-92 TO-18 The GE/RCA 2N2646, GES2646 and 2N2647, GES2647 Controlled Rectifiers and other applications where a , ), and also for triggering high power SCR's. The 2N2646 and GES2646 are intended for genera purpose T^se , 'a(B s lied in JEDa|c jo-18 package (2N2646, industrial appllca ions where circuit economy is of -
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11Z12 2N2646 terminal 2n2646 to 92 2N2646 TO-92 transistor GES2646 Unijunction transistor 2N2646 of 92C5-42573 C35-2HW1- CM-2H1I42-U C10-2N1770A-77A
Abstract: 2N2646 2N2647 PN UJTs CASE 22A-01 STYLE 1 â'¢MAXIMUM RATINGS (TA = 25°C unless otherwise noted , /OPTO) 25E D â  b3b755S OQfiOTDl fi â  2N2646 â'¢ 2N2647 . 7-3 7-AI 'ELECTRICAL CHARACTERISTICS (Ta , (Vb2B1 = 10 V), Note 1 2N2646 2N2647 V 0.56 0.68 - 0.75 0.82 Interbase Resistance (VB2B1 = 3 V, lE = 0 , '" mA Emitter Reverse Current (vb2e = 30 v, Ibi = o) 2N2646 2N2647 'EB20 - 0.005 0.005 12 0.2 jua Peak Point Emitter Current (VB2B1 = 25 V) 2N2646 2N2647 IP - 1 1 5 2 ma Valley Point Current (VB2B1 = 20 V -
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transistor motorola 2n2646 2N2646 motorola motorola 2n2646 2N2646 Vp motorola eb20 2N2647 MOTOROLA V02B1
Abstract: unless otherwise noted.) 2N2646 2N2647 PN UJTs CASE 22A-01 STYLE 1 Rating Symbol Value Unit Power , '"10 fiF or less, 30 volts or less. http://www.bocasemi.com 2N2646 â'¢ 2N2647 â'ž 7-3 7- * ELECTRICAL , Standoff Ratio (VB2B1 = 10 V), Note 1 2N2646 2N2647 V 0.56 0.68 â'" 0.75 0.82 Interbase Resistance (VB2B1 , ) lB2(mod) â'" 15 â'" mA Emitter Reverse Current (VB2E = 30 v, Ibi = o) 2N2646 2N2647 'EB20 â'" 0.005 0.005 12 0.2 juA Peak Point Emitter Current (VB2B1 = 25 V) 2N2646 2N2647 IP â'" 1 1 5 2 MA Valley -
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transistor 2n2647 2N264 EB20 22A01
Abstract: 39ö ZSZ. philips international Philips Semiconductors Datasheet status Preliminary specification date of issue December 1990 SbE D â  711002b 004Eb]i0 fc,31 HPHIN 2N2646 Silicon , transistor 2N2646 philips international" sfae~t~«i vlluòe^u^eh^'sivmphm LIMITING VALUES ' j-25-09 In , Preliminary specification Silicon unijunction transistor 2N2646 PHILIPS INTERNATIONAL SbE ]> â  711062b , Semiconductors_â'"- Silicon unijunction transistor 2N2646 PHILIPS INTERNATIONAL SbE D â  7110a2b 004Sbl3 340 -
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2n2646 pin 2N2646 PHILIPS 2N2646 pin configuration 2n2646 package USB031 T-25-Q9
Abstract: N AMER PHILIPS/DISCRETE bTE D Philips Semiconductors 2N2646 bbSBTBl DDEfllOM 77b Data sheet status Preliminary specification date of issue December 1990 Silicon unijunction transistor IAPX , Philips Semiconductors preliminary specification Silicon unijunction transistor 2N2646 LIMITING VALUES , QGEfilOb 54^ â  APX Preliminary specification Silicon unijunction transistor 2N2646 CHARACTERISTICS , specification Silicon unijunction transistor 2N2646 PACKAGE OUTLINE 5.8 max r~ 0 4.8 max ♦_ J. 0 0.48 -
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Transistor 2N2646 PIN 2N2646 -pin configuration silicon unijunction transistor lem HA 2N2646 DATA SHEET transistor 736
Abstract: PHILIPS INTERNATIONAL 2N2646 Silicon unijunction transistor QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT ~VeB2 emitter-base 2 voltage â'" â'" 30 V 'em emitter current peak value â , Silicon unijunction transistor 2N2646 LIMITING VALUES In accordance with the Absolute Maximum System (EC , specification Silicon unijunction transistor 2N2646 CHARACTERISTICS Tarrt) = 25 °C unless otherwise specified , specification Silicon unijunction transistor 2N2646 PACKAGE OUTLINE Dimensions in mm. 1.16 / /vV450'1 I 0 4.8 -
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MC8444 MB81S5 MSB031 MCB442 MCB443
Abstract: and Switches 2N2646, 2N2647, GES2646, GES2647 Silicon Unijunction Transistors TO-92 TO-18 C , E S 2 6 4 6 GES2647) pacKages ^ t b ^ 4 b , Th e G E /R C A 2N2646, G E S 2 6 4 6 and 2N2647, G E , " Unijunction Transistors and Switches - 2N2646,2N2647, GES2646 , 2N2646 and 2N2647 is used to ensure a minimum pulse amplitude for applications in S C R firing circuits , r bbo 2N2646|GES2646 MIN. 0.56 4.7 - 2N2647.GES2647 MIN. 0.68 4.7 - UNITS - TYP, 0.69 -
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transistor 2N 2646 2N 2646 ZCS-42S87 367S061 16DQ3 19--M
Abstract: PHILIPS INTERNATIONAL Philips Semiconductors Data sheet status Preliminary specification date of issue December 1990 SbE » â  711DÃEb 0042bl0 b31 «PHIN T-2 2N2646 T Silicon , Preliminary specification Silicon unijunction transistor PHILIPS INTERNATIONAL LIMITING VALUES 2N2646 5bE , Semiconductora Preliminary specification Silicon unijunction transistor 2N2646 PHILIPS INTERNATIONAL SbE D â , Respective Manufacturer Philips Semiconductors Silicon unijunction transistor 2N2646 PHILIPS -
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unijunction transistor data sheet 2n2646 transistor scans sheet Scans-004806 B2B1 B201 0042L
Abstract: UNIJUNCTIONS 2N489-494â'"proved reliability, MIL spec version. 2N2646-47â'"low cost, proved hermetic sealed , , 2N1671, 2H21S0 2N2646 2N2647 D5K1 D5K2 2N6027 2N602B SUS 2N4983-90 SBS 2N4991 -93 DC, Lo Cost P F E , Transistors The General Electric 2N2646 and 2N2647 Silicon Unijunction Transistors have an entirely new , higher base-one peak pulse boltage. In addition, these devices are much faster switches. The 2N2646 is , . This specification on the 2N2646 and 2N2647 is used to ensure a minimum pulse amplitude for -
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UJT 2N2646 UJT 2N2646 specification 2n2646 ujt PUT 2N2646 SCR firing inverter circuit UJT 2N2646 ratings 2N489-94 2N602 2IM2646 26B-2N2647-HI
Abstract: N AMER PHILIPS/DISCRETE b'lE D â  bbSB'lBl DDEfllDM 77b « A P X Philips Semiconductors 2N2646 D a ta s h e e t s ta tu s Preliminary specification d a te o f is s u e , bD2 HIAPX b'lE D Preliminary specification Philips Semiconductors 2N2646 Silicon , Preliminary specification Silicon unijunction transistor 2N2646 C H A R A C T E R IS T IC S Tam = 25 , P X Preliminary specification Silicon unijunction transistor 2N2646 P A C K A G E OUTLINE -
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2N2646P C8444
Abstract: Datasheet Central Semiconductor corp. 145 Adams Avenue, Hauppauge, NY 11788 USA Tel: (631) 435-1110 â'¢ Fax: (631) 435-1824 Manufacturers of World Class Discrete Semiconductors 2N2646 2N2647 SILICON UNIJUNCTION TRANSISTOR JEDEC TO-18 CASE* DESCRIPTION The CENTRAL SEMICONDUCTOR 2N2646, 2N2647 types are silicon PN unijunction transistors designed for general purpose industrial applications , =25V IV VB2B1=20V, RB2=100fi VqbI See test circuit below 300 50 2.0 35 30 -65 TO +150 2N2646 -
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Maa 435
Abstract: 2N2646 SILICON PN UNIJUNCTION TRANSISTOR DESCRIPTION: The 2N2646 is a Unijunction Transistor Used in General Purpose Pulse, Timing, Sense and Trigger Applications. MAXIMUM RATINGS lc 2.0 A (PULSED) VCE 30 V Pdiss 300 mW @ Tc = 25 °C Tj -65 °C to +125 °C Tstg -65 °C to +150 °C Ãjc 33 °C/W PACKAGE STYLE TO-18 (MOD) CHARACTERISTICS tc = 25 0c SYMBOL TEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS h VB2B1 = 10 V 0.56 0.75 - tbb VB2B1 = 3.0 V 4.7 9.1 KQ arBB VB2B1 = 3.0 V TA = -55 to 1250C 0.1 -
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Abstract: m 2N2646 \ \ SILICON PN UNIJUNCTION TRANSISTOR DESCRIPTION: The 2N2646 is a Unijunction Transistor Used in General Purpose Pulse, Timing, Sense and Trigger Applications. PACKAGE STYLE TO-18(MOD) MAXIMUM RATINGS 2.0 A (PULSED) P diss 300 mW @ Tc = 25 °C < 30 V m O lc Tj -65 °C t o +125 °C T stg -65 °C t o +150 °C 0JC 33 °C/W CHARACTERISTICS < o CD II < h O CD i TYPICAL 0.75 - 9.1 KQ 0.1 0.9 % -
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Abstract: Uniformity 2N2646 2N2647 PN UJTs · M A X IM U M R A T IN G S IT a = 25°C u n le ss otherw ise noted , S/ OP TO ) 2N2646 · 2N2647 25E D b 3 b 7 5 5 5 OOflOTDl f i ^ m + t -
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02B1
Abstract: PPC PRODUCTS CORPORATION II SEMICONDUCTOR SPECIALIST Surface Mount Devices v * ceo (suit) (Volts) Min Device 'c ImAI Max ^FE ® 'c fT@lc NF (dB) MAX Package p {mW> @25 C NPN PIMP Min Max mA (MHz) Min mA 40 MMBT3904 200 100 300 10 300 10 6.0 TO-236 350 MMBT3906 200 100 300 10 250 10 5.0 TO-236 350 MMBT4401 600 100 300 150 250 20 TO-236 350 MMBT4403 600 100 300 150 200 10 6.0 TO-236 350 Metal TO-18 Device Type n â p li A Max jA Max â'¢v mA Max Min Max 2N2646 0.56 -
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2N4851 2N4852 2N4853 2N4870 MU4891 transistor 2n4852 transistor 2n4871 2n4871 2N4871
Abstract: TYPES 2N2646, 2N2647 P-N PIANAR SILICON UNIJUNCTION TRANSISTORS B U L L E T IN N O . D L -S 7 3 1 1 9 5 9 , M A R C H 1 9 7 3 PLANAR UNIJUNCTION TRANSISTORS SPECIFICALLY CHARACTERIZED FOR A WIDE RANGE OF M ILITA R Y AND INDUSTRIAL APPLICATIONS · Planar Process Ensures Low Leakage, Low Drive-Current Requirement, and Improved Reliability "mechanical data Package ou tlin e is the same as J E D E C T O -1 8 , LLA S, T E X A S 78232 TYPES 2N2646, 2N2647 P-N PLANAR SILICON UNUUNCTION TRANSISTORS 'electrical -
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n2646
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