NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
| Part | Manufacturer | Description | Type | Ordering |
| 2N2646 | Advanced Semiconductor, Inc. | Silicon PN Unijunction Transistor |
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| 2N2646 | Advanced Semiconductor, Inc. | Silicon P-N Unijunction Transistor |
8 pages, |
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| 2N2646 | Boca Semiconductor | Silicon PN Unijuction Transistor |
2 pages, |
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| 2N2646 | Central Semiconductor |
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| 2N2646 | Central Semiconductor | UNIJUNCTION TRANSISTORS |
4 pages, |
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| 2N2646 | Comset Semiconductors | Silicon Junction Transistors |
2 pages, |
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| 2N2646 | Digitron | SILICON ANNULAR PN UNIJUNCTION TRANSISTORS |
1 pages, |
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| 2N2646 | General Electric | Semiconductor Data Book 1971 |
1 pages, |
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| 2N2646 | General Electric | Semiconductor Data Handbook 1977 |
6 pages, |
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| 2N2646 | General Electric Solid State | Silicon unijunction transistor. 30V, 50mA. |
5 pages, |
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| Catalog Datasheet Results | Type | Document Tags |
| Abstract: 2N2646 2N2647 2N2647 SILICON UNIJONCTION TRANSISTORS Silicon Planar Unijunction Transistors have a , higher base-one peak pulse voltage. In addition, these devices are much faster switches. The 2N2646 is , Ratings 2N2646 2N2647 2N2647 VB1E Base 1 Â Emitter Voltage 30 V VB2E Base 2 Â Emitter , Current V(BR)B1E 2N2646 Â 2N2647 2N2647 Max uA 12 30 COMSET SEMICONDUCTORS V 1/2 2N2646 2N2647 2N2647 Symbol 2N2646 Â 2N2647 2N2647 Ratings RBBO Intrinsic stand-off ratio VB1B2 = 10 V ... | Original |
2 pages, |
scr firing 2N2646 datasheet rbbo 2n2646 of symbol power scr High power SCR 2n2647 2N2646 transistor datasheet transistor 2N2646 2n2646 equivalent 2N2646 CIRCUIT SCR 2N2646 2N2646 2N2646 2N2647 2N2646 abstract |
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| Abstract: 2N2646 2N2647 2N2647 SILICON UNIJUNCTION TRANSISTORS Silicon Planar Unijunction Transistors have a , higher base-one peak pulse voltage. In addition, these devices are much faster switches. The 2N2646 , Temperature Capacitor discharge  10uF or less, 30volts or less. 2N2646 2N2647 2N2647 30 50 2 35 300 -65 to +125 -65 to +150 Unit V mA A V mW °C °C 2N2646 2N2647 2N2647 ELECTRICAL CHARACTERISTICS , 2N2646 Intrinsic stand-off ratio VB2B1 = 10V 2N2647 2N2647 Interbase Resistance , VB2B1 = 3V Emitter ... | Original |
3 pages, |
2N2646 equivalent 2N2646 transistor datasheet "Power scr" rbbo 2n2647 power scr transistor 2N2646 2N2646 CIRCUIT SCR 2N2646 2N2646 High power SCR 2N2647 2N2646 abstract |
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| Abstract: ) 2N2646 2N2647 2N2647 PN UJTs CASE 22A-01 STYLE 1 Rating Symbol Value Unit Power Dissipation, Note 1 PD 300 , volts or less. http://www.bocasemi.com 2N2646 • 2N2647 2N2647 „ 7-3 7- * ELECTRICAL CHARACTERISTICS (Ta = , (VB2B1 = 10 V), Note 1 2N2646 2N2647 2N2647 V 0.56 0.68 - 0.75 0.82 Interbase Resistance (VB2B1 = 3 V, lE = 0 , Reverse Current (VB2E = 30 v, Ibi = o) 2N2646 2N2647 2N2647 'EB20 - 0.005 0.005 12 0.2 juA Peak Point Emitter Current (VB2B1 = 25 V) 2N2646 2N2647 2N2647 IP - 1 1 5 2 MA Valley Point Current (VB2B1 = 20 V, Rb2 = 100 ohms ... | OCR Scan |
2 pages, |
EB20 transistor 2n2647 transistor 2n2646 2N264 SCR 2N2646 2N2646 CIRCUIT 2N2647 2N2646 Unijunction transistor 2N2646 of 2N2646 transistor 2N2646 abstract |
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| Abstract: Current - 200 nA (Max) • Passivated Surface for Reliability and Uniformity 2N2646 2N2647 2N2647 PN UJTs CASE , fiF or less, 30 volts or less. nim MOTOROLA SC (DIODES/OPTO) 25E D â- b3b755S OQfiOTDl fi â- 2N2646 • , Symbol Min Typ Max Unit Intrinsic Standoff Ratio (Vb2B1 = 10 V), Note 1 2N2646 2N2647 2N2647 V 0.56 0.68 - 0.75 , 1" V, l£ = 50 mA) lB2(mod) - 15 - mA Emitter Reverse Current (vb2e = 30 v, Ibi = o) 2N2646 2N2647 2N2647 'EB20 - 0.005 0.005 12 0.2 jua Peak Point Emitter Current (VB2B1 = 25 V) 2N2646 2N2647 2N2647 IP - 1 1 5 2 ma ... | OCR Scan |
2 pages, |
2N2646 transistor transistor 2N2646 thyristor scr oscillator circuit EB20 2n2647 silicon unijunction transistor SCR 2N2646 2N2646 Vp motorola power transistor to-126 2N2647 MOTOROLA 2N2646 motorola eb20 2N2646 motorola 2N2646 abstract |
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| Abstract: Datasheet Central Semiconductor corp. 145 Adams Avenue, Hauppauge, NY 11788 USA Tel: (631) 435-1110 • Fax: (631) 435-1824 Manufacturers of World Class Discrete Semiconductors 2N2646 2N2647 2N2647 SILICON UNIJUNCTION TRANSISTOR JEDEC TO-18 CASE* DESCRIPTION The CENTRAL SEMICONDUCTOR 2N2646, 2N2647 2N2647 types are silicon PN unijunction transistors designed for general purpose industrial applications. , IV VB2B1=20V, RB2=100fi VqbI See test circuit below 300 50 2.0 35 30 -65 TO +150 2N2646 ... | OCR Scan |
1 pages, |
transistor 2N2646 Maa 435 2N2646 -pin configuration 2N2646 Vp 2N2647 rbbo 2N2646 Unijunction transistor 2N2646 of 2N2646 abstract |
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| Abstract: Temperature (TA) = 25°C Unless Otherwise Specified CHARACTERISTICS SYMBOL LIMITS UNITS 2N2646.GES2646 , Transistors and Switches 2N2646, 2N2647 2N2647, GES2646 GES2646, GES2647 GES2647 Silicon Unijunction Transistors TO-92 TO-18 The GE/RCA 2N2646, GES2646 GES2646 and 2N2647 2N2647, GES2647 GES2647 Controlled Rectifiers and other applications where a , triggering high power SCR's. The 2N2646 and GES2646 GES2646 are intended for genera purpose T^se , 'a(B s lied in JEDa|c jo-18 package (2N2646, industrial appllca ions where circuit economy is of primary 2N2647 2N2647) and ... | OCR Scan |
5 pages, |
C10-2N1770A-77A pulse 4 SCR firing 2H2023-30 2N2647 TO-92 GE C35 c45 scr High power SCR 2n2646 of symbol 2N2647 2N2646 CIRCUIT 2n2646 package transistor 2N2646 SCR 2N2646 2N2646 2N2647 2N2646 abstract |
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| Abstract: 2N2646 SILICON PN UNIJUNCTION TRANSISTOR DESCRIPTION: The 2N2646 is a Unijunction Transistor Used in General Purpose Pulse, Timing, Sense and Trigger Applications. MAXIMUM RATINGS lc 2.0 A (PULSED) VCE 30 V Pdiss 300 mW @ Tc = 25 °C Tj -65 °C to +125 °C Tstg -65 °C to +150 °C Ã-jc 33 °C/W PACKAGE STYLE TO-18 (MOD) CHARACTERISTICS tc = 25 0c SYMBOL TEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS h VB2B1 = 10 V 0.56 0.75 - tbb VB2B1 = 3.0 V 4.7 9.1 KQ arBB VB2B1 = 3.0 V TA = -55 to 1250C 1250C 0.1 0.9 % ... | OCR Scan |
1 pages, |
2N2646 unijunction transistor transistor 2N2646 2N2646 transistor 2N2646 abstract |
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| Abstract: PHILIPS INTERNATIONAL Philips Semiconductors Data sheet status Preliminary specification date of issue December 1990 SbE » â- 711DÃ-Eb 0042bl0 b31 «PHIN T-2 2N2646 T Silicon unijunction , specification Silicon unijunction transistor PHILIPS INTERNATIONAL LIMITING VALUES 2N2646 5bE D â- 711002b , specification Silicon unijunction transistor 2N2646 PHILIPS INTERNATIONAL SbE D â- 711002b D042bl2 404 «PHIN , Semiconductors Silicon unijunction transistor 2N2646 PHILIPS INTERNATIONAL PACKAGE OUTLINE SbE D â- 711Dfl2b ... | OCR Scan |
4 pages, |
Unijunction transistor 2N2646 of B201 B2B1 EB20 transistor scans sheet data sheet 2n2646 2N2646 TRANSISTOR 2N2646 PHILIPS 2n2646 package transistor 2N2646 2N2646 CIRCUIT unijunction transistor silicon unijunction transistor 2N2646 2N2646 abstract |
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| Abstract: 39ö ZSZ. philips international Philips Semiconductors Datasheet status Preliminary specification date of issue December 1990 SbE D â- 711002b 004Eb]i0 fc,31 HPHIN 2N2646 Silicon unijunction , 2N2646 philips international" sfae~t~«i vlluòe^u^eh^'sivmphm LIMITING VALUES ' j-25-09 In accordance , Preliminary specification Silicon unijunction transistor 2N2646 PHILIPS INTERNATIONAL SbE ]> â- 711062b , Semiconductors_-- Silicon unijunction transistor 2N2646 PHILIPS INTERNATIONAL SbE D â- 7110a2b 004Sbl3 340 HIPHIN ... | OCR Scan |
4 pages, |
2n2646 package 2N2646 transistor datasheet 2N2646 pin configuration 2N2646 PHILIPS 2n2646 2n2646 pin transistor 2N2646 2N2646 2N2646 abstract |
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| Abstract: N AMER PHILIPS/DISCRETE bTE D Philips Semiconductors 2N2646 bbSBTBl DDEfllOM 77b Data sheet status Preliminary specification date of issue December 1990 Silicon unijunction transistor IAPX , Philips Semiconductors preliminary specification Silicon unijunction transistor 2N2646 LIMITING VALUES , Preliminary specification Silicon unijunction transistor 2N2646 CHARACTERISTICS Tamb = 25 °C unless , 002fllD7 4&5 â- APX Philips Semiconductors Preliminary specification Silicon unijunction transistor 2N2646 ... | OCR Scan |
4 pages, |
silicon unijunction transistor lem HA 2N2646 pin configuration 2N2646 DATA SHEET 2N2646 -pin configuration 2n2646 package 2n2646 transistor 2N2646 2n2646 pin 2N2646 2N2646 abstract |
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| No abstract text available www.datasheetarchive.com/download/62652498-672420ZC/2n2646.jpg |
User Photos | 23/05/2012 | 5.88 Kb | JPG | 2n2646.jpg |
| .SUBCKT X2N2646 1 2 3 *Uni Junction Transistor, 3 *Node 1,Emitter *Node 2,Base1 *Node 3,Base2 * DE 1 4 EMITTER VE 4 5 DC 0 HVE 6 0 VE 1K RVE 0 6 1MEG BBB 5 7 I=0.00028*V(5,7)+0.00575*V(5,7)*V(6) CBB 5 7 35P RB1 7 2 38.15 RMOD RB2 3 5 2.518K RMOD .MODEL RMOD R TC1=.01 .MODEL EMITTER D (IS=21.3P N=1.8) .ENDS X2N2646 www.datasheetarchive.com/files/kaleidoscope/cad/visionics_edwinxp140/edwinxp/eds_sbk/motorola/x2n2646.sbc |
Kaleidoscope | 01/12/2003 | 0.32 Kb | SBC | x2n2646.sbc |
| Search Criteria: Package = TO-18, PartType = Uni-Junction Transistors Part No Type Package PD (Watts) IP (uni) (uAmps) IEB20 IEB20 IEB20 IEB20 (uAmps) Iv (mAmps) Rbb (min) (Kohms) 2N4853 2N4853 2N4853 2N4853 PPC UNI TO-18 STD 0.3 0.4 0.05 6 4.7 2N4851 2N4851 2N4851 2N4851 PPC UNI TO-18 STD 0.3 2 0.1 2 4.7 2N4852 2N4852 2N4852 2N4852 PPC UNI TO-18 STD 0.3 2 0.1 4 4.7 2N2647 2N2647 2N2647 2N2647 PPC UNI TO-18 STD 0.3 2 0.2 8 4.7 2N2646 PPC UNI TO-18 STD 0.3 5 12 4 4.7 www.datasheetarchive.com/files/microsemi/products/uni/to-18.htm |
Microsemi | 30/12/1998 | 4.42 Kb | HTM | to-18.htm |
| Search Criteria: PartType = Uni-Junction Transistors, IP (uni) = 5 MicroAmp PartNo Data Sheet Pack P D (W) IP (uni) (uA) N ( ) IEB20 IEB20 IEB20 IEB20 (uA) Iv (mA) 2N2646 TO-18 STD 0.3 5 0.75 12 4 2N4870 2N4870 2N4870 2N4870 TO-92 STD 0.3 5 0.75 1 2 2N4871 2N4871 2N4871 2N4871 TO-92 STD 0.3 5 0.85 1 4 MU4891 MU4891 MU4891 MU4891 TO-92 STD 0.3 5 0.82 0.01 2 www.datasheetarchive.com/files/microsemi/products/uni/215_5.htm |
Microsemi | 07/12/1999 | 6.12 Kb | HTM | 215_5.htm |
| Search Criteria: Package = TO-18, PartType = Uni-Junction Transistors PartNo Data Sheet Pack P D (W) IP (uni) (uA) N ( ) IEB20 IEB20 IEB20 IEB20 (uA) Iv (mA) 2N2646 TO-18 STD 0.3 5 0.75 12 4 2N2647 2N2647 2N2647 2N2647 TO-18 STD 0.3 2 0.82 0.2 8 2N4851 2N4851 2N4851 2N4851 TO-18 STD 0.3 2 0.75 0.1 2 2N4852 2N4852 2N4852 2N4852 TO-18 STD 0.3 2 0.85 0.1 4 2N4853 2N4853 2N4853 2N4853 www.datasheetarchive.com/files/microsemi/products/uni/to-18-v1.htm |
Microsemi | 07/12/1999 | 7 Kb | HTM | to-18-v1.htm |
| 2N2646 PartID: 24314 | Rev: 1/4/99 PPC Inc. Part Type: Uni-Junction Transistors Package: TO-18 (STD-Thru Hole) 0.3 Watts 5 uAmps Maximum Ratings and Electrical www.datasheetarchive.com/files/microsemi/products/24314.htm |
Microsemi | 04/01/1999 | 4.7 Kb | HTM | 24314.htm |
| 2N2646 (#24314) Uni-Junction Transistors Division PPC Inc. Datasheet (none) Mil-Spec (none) Prod-Class (none) Shipping (none) Qual Data (none) Absolute Maximum Ratings Symbol Max Unit Power Dissipation www.datasheetarchive.com/files/microsemi/products/24314-v1.htm |
Microsemi | 08/12/1999 | 7.87 Kb | HTM | 24314-v1.htm |
| Transistor JANTXV 2N2605 2N2605 2N2605 2N2605 Watertown PNP Transistor 2N2646 PPC Inc www.datasheetarchive.com/files/microsemi/products/partno/2n26.htm |
Microsemi | 03/12/1999 | 7.32 Kb | HTM | 2n26.htm |
| UNI TO-92 STD 0.3 5 1 2 4 2N4871 2N4871 2N4871 2N4871 PPC UNI TO-92 STD 0.3 5 1 4 4 2N2646 PPC UNI TO-18 STD 0.3 5 12 4 4.7 www.datasheetarchive.com/files/microsemi/products/uni/ppc.htm |
Microsemi | 23/12/1998 | 7.4 Kb | HTM | ppc.htm |
| UNI TO-92 STD 0.3 5 1 2 4 2N4871 2N4871 2N4871 2N4871 PPC UNI TO-92 STD 0.3 5 1 4 4 2N2646 PPC UNI TO-18 STD 0.3 5 12 4 4.7 www.datasheetarchive.com/files/microsemi/products/uni/uni_ppc.htm |
Microsemi | 04/01/1999 | 7.34 Kb | HTM | uni_ppc.htm |
| Part | Manufacturer | Description | Shortform Datasheet | Ordering |
| 2N2646 | N/A | PNP Unijunction Transistor | |
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| 2N2646P | N/A | PNP Unijunction Transistor | |
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| 2N2646P | Thomson-CSF | PN (N-Type Base) Unijunction Transistor | |
| NTE Electronics Part | Industry Part |
| Part | Similar Part | Notes |