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2N2605 Microsemi Corporation Small Signal Bipolar Transistor, 0.03A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-206AB, TO-46, 3 PIN visit Digikey Buy
JANTXV2N2605 Microsemi Corporation Small Signal Bipolar Transistor, 0.03A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-206AB, TO-46, 3 PIN visit Digikey Buy
JAN2N2605 Microsemi Corporation Small Signal Bipolar Transistor, 0.03A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-206AB, TO-46, 3 PIN visit Digikey Buy
JANTX2N2605 Microsemi Corporation Small Signal Bipolar Transistor, 0.03A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-206AB, TO-46, 3 PIN visit Digikey Buy

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2N2605 Datasheet

Part Manufacturer Description PDF Type
2N2605 Central Semiconductor Pol=PNP / Pkg=TO46 / Vceo=60 / Ic=- / Hfe=150min / fT(Hz)=100M / Pwr(W)=0.4 Original
2N2605 Microsemi BJT, PNP, Low Power Transistor, VCB0 70V, IC 0.03A - Pol=PNP / Pkg=TO46 / Vceo=60 / Ic=- / Hfe=150min / fT(Hz)=100M / Pwr(W)=0.4 Original
2N2605 Microsemi PNP Transistor; Package: TO-46; Original
2N2605 Microsemi Transistors (BJT) - Single, Discrete Semiconductor Products, TRANS PNP 70V 30MA TO-46 Original
2N2605 Semico Chip Type 2C2605 Geometry 0220 Polarity NPN - Pol=PNP / Pkg=TO46 / Vceo=60 / Ic=- / Hfe=150min / fT(Hz)=100M / Pwr(W)=0.4 Original
2N2605 Central Semiconductor METAL CAN Transistors Scan
2N2605 Central Semiconductor Small Signal Transistors TO-46 Case Scan
2N2605 Central Semiconductor Metal Can Transistors Scan
2N2605 Dionics Transistor Chips Scan
2N2605 Ferranti Semiconductors Metal Can Transistors (Short Form) Scan
2N2605 Ferranti Semiconductors Shortform Data Book 1971 Scan
2N2605 Ferranti Semiconductors Quick Reference Guide 1985 Scan
2N2605 Micro Electronics Semiconductor Device Data Book Scan
2N2605 Motorola Motorola Semiconductor Datasheet Library Scan
2N2605 Motorola European Master Selection Guide 1986 Scan
2N2605 Motorola Low Level and General Purpose Amplifiers Scan
2N2605 Motorola Power Transistor Selection Guide Scan
2N2605 N/A Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan
2N2605 N/A Semiconductor Master Cross Reference Guide Scan
2N2605 N/A Shortform Electronic Component Datasheets Scan
Showing first 20 results.

2N2605

Catalog Datasheet MFG & Type PDF Document Tags

2N2605

Abstract: TO206AB MIL-PRF-19500/354 DEVICES LEVELS 2N2604 2N2604UB 2N2605 2N2605UB JAN JANTX JANTXV , 2N2604 2N2605 Unit 80 70 Vdc Collector-Base Voltage VCBO Collector-Emitter , CHARACTERTICS Collector-Base Breakdown Voltage 2N2604 IC = 10Adc 2N2605 Collector-Emitter Breakdown Current , 5.0Vdc 2N2604 2N2605 IC = 500Adc, VCE = 5.0Vdc 2N2604 2N2605 IC = 10mAdc, VCE = 5.0Vdc 2N2604 2N2605 hFE Collector-Emitter Saturation Voltage VCE(sat) IC = 10mAdc, IB = 500Adc
Microsemi
Original
TO206AB T4-LDS-0092

2N2605

Abstract: 2N2604 TECHNICAL DATA 2N2604 JAN, JTX, JTXV 2N2605 JAN, JTX, JTXV MIL-PRF QPL DEVICES , Dissipation @ TA = +250C(1) Operating & Storage Junction Temperature Range Symbol 2N2604 2N2605 , Vdc OFF CHARACTERISTICS Collector-Base Breakdown Voltage IC = 10 µAdc 2N2604 2N2605 , 2N2604, 2N2605 JAN SERIES ELECTRICAL CHARACTERISTICS (con't) Characteristics Symbol Min. Max , Vdc 2N2604 2N2605 2N2604 2N2605 2N2604 2N2605 Collector-Emitter Saturation Voltage IC = 10
New England Semiconductor
Original
ADC-03

equivalent 2N2605

Abstract: per MIL-PRF-19500/354 DEVICES LEVELS 2N2604 2N2605 2N2604UB 2N2605UB JAN JANTX , Symbol 2N2604 2N2605 Unit 80 70 Vdc Collector-Base Voltage VCBO , Collector-Base Cutoff Current VCB = 80V dc 2N2604, UB VCB = 70V dc 2N2605, UB VCB = 50V dc 2N2604, 2N2605, UB VCB = 50V dc, TA = +150°C 2N2604, 2N2605, UB Collector-Emitter Breakdown Current IC = 10mAdc , Transfer Ratio IC = 10μAdc, VCE = 5.0Vdc IC = 500μAdc, VCE = 5.0Vdc Symbol 2N2604, UB 2N2605, UB
Microsemi
Original
equivalent 2N2605

2N2605

Abstract: TO206AB Emitter-Base Voltage Collector Current Total Power Dissipation JAN, JANTX JANTXV 2N2605 Symbol @ TA = +250C(1) Operating & Storage Junction Temperature Range 2N2604 2N2605 Units VCBO , 2N2605 Collector-Emitter Breakdown Voltage IC = 10 mAdc Emitter-Base Breakdown Current IE = 10 µAdc , , 2N2605 JAN SERIES ELECTRICAL CHARACTERISTICS (con't) Characteristics Symbol Min. Max. 40 , Vdc 2N2604 2N2605 2N2604 2N2605 2N2604 2N2605 Collector-Emitter Saturation Voltage IC = 10
Microsemi
Original

2N2605

Abstract: equivalent 2N2605 per MIL-PRF-19500/354 DEVICES LEVELS 2N2604 2N2605 2N2604UB 2N2605UB JAN JANTX , Symbol 2N2604 2N2605 Unit 80 70 Vdc Collector-Base Voltage VCBO , CHARACTERTICS Collector-Base Cutoff Current VCB = 80V dc 2N2604, UB VCB = 70V dc 2N2605, UB VCB = 50V dc 2N2604, 2N2605, UB VCB = 50V dc, TA = +150°C 2N2604, 2N2605, UB Collector-Emitter Breakdown Current , 2N2605, UB hFE Max. 40 100 2N2604, UB 2N2605, UB Min. 120 300 60 150 180 450
Microsemi
Original

2N2605

Abstract: 2N2604 Data Sheet 2N2604 ^^ _^_H TM 2N2605 Central Semiconductor Corp. PNP SILICON , 2N2604, 2N2605 types are Silicon PNP Transistors designed for low-level, low noise, high gain amplifier , (2n2604) 40 120 - hFE vce = 5.0v, Iq = 10|jA (2n2605) 100 300 - hFE vce = 5.0v, lc = 10^a, Ta = -55°C (2n2604) 10 - hFE Vce = 5.0v, lc = 10^a, Ta = -55°C (2n2605) 20 - hFE vce = 5.0v, lc = 500na (2n2604) 60 - hFE VCE = 5.0V, Iq = 500{iA (2N2605) 150 - hFE vce = 5.0v, lc = 10ma (2n2604) 350 - hFE
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OCR Scan
100MH

2N2605

Abstract: TO206AB Emitter-Base Voltage Collector Current Total Power Dissipation JANTX JANTXV 2N2605 Symbol @ TA = +250C(1) Operating & Storage Junction Temperature Range 2N2604 2N2605 Units VCBO VCEO , 2N2605 Collector-Emitter Breakdown Voltage IC = 10 mAdc Emitter-Base Breakdown Current IE = 10 µAdc , , 2N2605 JAN SERIES ELECTRICAL CHARACTERISTICS (con't) Characteristics Symbol Min. Max. 40 , Vdc 2N2604 2N2605 2N2604 2N2605 2N2604 2N2605 Collector-Emitter Saturation Voltage IC = 10
Microsemi
Original
TO-206AB

2N2604

Abstract: Si3N4 , SILICON, LOW-POWER, TYPES 2N2604, 2N2604UB, 2N2605, AND 2N2605UB, JAN, JANTX, JANTXV, AND JANS, JANHC , 60 60 30 30 °C -65 to +200 -65 to +200 2N2604, UB 2N2605, UB Type 2N2604 2N2604UB 2N2605 2N2605UB PT (1) TA = +25°C PT (1) TC = +25°C PT (1) TSP = +25°C RJA (2) RJC (2 , 2N2604, UB Min Max 2N2605, UB 2N2604, UB 100 300 60 180 VBE(sat) IC=10 mA dc IB , f 1 MHz V dc V dc 6 0.7 0.9 0.3 2N2605, UB 40 120 |hfe| VCE=5 V dc IC
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Original
Si3N4 MIL-PRF-19500/354L MIL-PRF-19500/354K MIL-PRF-19500 JANHCA2N2604 JANKCA2N2604 JANHCA2N2605

2N2605 JANS

Abstract: 2N2604 TYPES 2N2604, 2N2604UB, 2N2605 AND 2N2605UB JAN, JANTX, JANTXV, AND JANS, JANHC, JANKC This , . 1.3 Maximum ratings. Type 2N2604, UB 2N2605, UB PT (1) TA = +25°C MW 400 400 VCBO , 2N2605 100 300 hfe VCE=5 V dc IC=1 mA dc f=1 kHz 2N2604 60 180 2N2605 150 450 |hfe , ICBO2 Collector - base leakage current 2N2604 2N2605 3036 Collector - emitter breakdown , 3041 Bias condition C; VCE = 50 V dc ICES Forward current transfer ratio 2N2604 2N2605
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Original
2N2605 JANS MIL-PRF-19500/354H MIL-PRF-19500/354G

2n3810

Abstract: 2N3799 Data Sheet No. 2C2605 Generic Packaged Parts: Chip Type 2C2605 Geometry 0220 Polarity NPN 2N2604, 2N2605, 2N3798, 2N3799, 2N3810, 2N3811 Chip type 2C2605 by Semicoa Semiconductors provides performance similar to these devices. Product Summary: APPLICATIONS: Designed for high speed switching applications. Part Numbers: Features: · High speed switching capabilities 2N2604, 2N2605, 2N3789, 2N3799, 2N3810, 2N3811 Mechanical Specifications Metallization Bonding Pad Size Top Backside
Semicoa Semiconductors
Original
2n3810 datasheet

equivalent transistor 2N1711

Abstract: 2N2484 equivalent transistors 5/0.5 45 7 2 10.0 TO-18 2N2604 PNP 400 60 45 6 40/120 0.01 0.5 10/0.5 30 6 4 15.7* T046 2N2605 PNP , PNP TO-39 BFX37 2N2605* PNP TO-18 BFX65 2N2605* PNP TO-18 BFX84 2N1711 NPN TO-39 BFX85 2N171-1 NPN , BT2605 2N2605 60 45 6 100/300 0.01 0.5 10/0.5 100 1 SP PNP BT3250A 2N3250A 60 60 5 50/150 10.0 0.5 50
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OCR Scan
2N328A 2N929 2N1025 2N2280 2N2708 equivalent transistor 2N1711 2N2484 equivalent transistors NPN transistor 2n2222A plastic package DH3725CN transistor 2n1711 2N327A 2N327B 2N328B 2N329A 2N329B

EQUIVALENT TRANSISTOR bc109c

Abstract: equivalent transistor 2N1711 5/0.5 45 7 2 10.0 TO-18 2N2604 PNP 400 60 45 6 40/120 0.01 0.5 10/0.5 30 6 4 15.7* T046 2N2605 PNP , Electron" Types (Cont.) Type Near Equivalent Polarity Pkg. BFX30 2 N2904A PNP TO-39 BFX37 2N2605* PNP TO-18 BFX65 2N2605* PNP TO-18 BFX84 2N1711 NPN TO-39 BFX85 2N171-1 NPN TO-39 BFX86 2N1711 NPN TO-39 BFX87 , PNP BT2604 2N2604 60 45 6 40/120 0.01 0.5 10/0.5 80 1 SP PNP BT2605 2N2605 60 45 6 100/300 0.01 0.5
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OCR Scan
EQUIVALENT TRANSISTOR bc109c Transistor BC107 motorola bc109 Transistor Equivalent list EQUIVALENT TRANSISTOR bc108 Transistor BC107b motorola TRANSISTOR pnp BC140 2N760 2N760A 2N929A 2N930 2N930A 2N930B

2N697 equivalent

Abstract: 2N1711 equivalent Transistors (Cont.) Discrete Devices European "Pro Electron" Types (Cont.) Type Near Equivalent Polarity Pkg. BFX30 2 N2904A PNP TO-39 BFX37 2N2605* PNP TO-18 BFX65 2N2605* PNP TO-18 BFX84 2N1711 NPN TO-39 BFX85 2N171-1 NPN TO-39 BFX86 2N1711 NPN TO-39 BFX87 2 N 2904A PNP TO-39 BFX88 2N2904A PNP TO-39 8FY39 2N916 NPN TO-18 BFY39-1 2N916 NPN TO-18 BFY39-2 2N916 NPN TO-18 BFY50 2N697 NPN TO-39 BFY51 2N697 NPN TO-39 BFY52 2N1711 NPN TO-39 BFY56 2N697 NPN TO-39 BFY72 2N2218 NPN TO
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OCR Scan
BSY38 BSY39 2N3914 TCH99 DH3467CD Q2T3725 2N697 equivalent 2N1711 equivalent 2N2219A BSX45 2N1711 MOTOROLA BFY76 BSX45-6 SP918F SP918QD SP918QF SP930F

2n2605

Abstract: 2N26 2N2605 Silicon PNP Transistor Data Sheet Description SEMICOA Corporation offers: · Screening and processing per MIL-PRF-19500 · JAN level (2N2605J) · JANTX level (2N2605JX) · JANTXV level (2N2605JV) · QCI to the applicable level · 100% die visual inspection per MIL-STD-750 method 2072 for JANTXV · Radiation testing (total dose) upon request Applications · Noise-level amplifier circuits · , Page 1 of 2 www.SEMICOA.com 2N2605 Silicon PNP Transistor Data Sheet ELECTRICAL
Semicoa Semiconductors
Original
2N26
Abstract: 2N2605 Silicon PNP Transistor Data Sheet Description Applications SEMICOA Corporation offers: â'¢ Noise-level amplifier circuits â'¢ Low power â'¢ PNP silicon transistor â'¢ Screening and processing per MIL-PRF-19500 â'¢ JAN level (2N2605J) â'¢ JANTX level (2N2605JX) â'¢ JANTXV level (2N2605JV) â'¢ QCI to the applicable level â'¢ 100% die visual inspection per MIL-STD-750 method , 92626 714.979.1900, FAX 714.557.4541 www.SEMICOA.com Page 1 of 2 2N2605 Silicon PNP Transistor Semicoa Semiconductors
Original

2n26

Abstract: 2N2605 Silicon PNP Transistor Data Sheet Description Semicoa Semiconductors offers: · Screening and processing per MIL-PRF-19500 Appendix E · JAN level (2N2605J) · JANTX level (2N2605JX) · JANTXV level (2N2605JV) · QCI to the applicable level · 100% die visual inspection per MIL-STD-750 method 2072 for JANTXV · Radiation testing (total dose) upon request Applications · Noise-level amplifier , Page 1 of 2 www.SEMICOA.com 2N2605 Silicon PNP Transistor Data Sheet ELECTRICAL
Semicoa Semiconductors
Original

2N2605JV

Abstract: 2N2605 2N2605 Silicon PNP Transistor Data Sheet Description Applications Semicoa Semiconductors offers: · Noise-level amplifier circuits · Low power · PNP silicon transistor · Screening and processing per MIL-PRF-19500 Appendix E · JAN level (2N2605J) · JANTX level (2N2605JX) · JANTXV level (2N2605JV) · QCI to the applicable level · 100% die visual inspection per MIL-STD-750 method 2072 for , 714.979.1900, FAX 714.557.4541 www.SEMICOA.com Page 1 of 2 2N2605 Silicon PNP Transistor Data Sheet
Semicoa Semiconductors
Original

bc140

Abstract: ZT152 100 0-25 10 0 -25 120 460 2 180* 10 1000t TO-18 BCY65E 2N2605 60 45 30 0-5 10 0-5 150 â'" 0-5 30 0 -5 , 2N2605 60 45 30 0-5 10 0-5 150 â'" 0-5 30 0 -5 400 T046 â'" 2N2604 60 45 30 0-5 10 0-5 60 - 0-5 30 0 -5 , 10 1 100 - 10 150 10 , 0-25 10 1 100 â'" 10 150 10
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OCR Scan
ZT211 2N4036 2N2102 ZT189 BC161 BC141 bc140 ZT152 BCY77 ZT90/95 T0-18

equivalent transistor 2N1711

Abstract: MOTOROLA 2n2102 TRANSISTOR .) Type Near Equivalent Polarity Pkg. BFX30 2 N2904A PNP TO-39 BFX37 2N2605* PNP TO-18 BFX65 2N2605 , 2N2604 60 45 6 40/120 0.01 0.5 10/0.5 80 1 SP PNP BT2605 2N2605 60 45 6 100/300 0.01 0.5 10/0.5 100 1
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OCR Scan
2N784A MOTOROLA 2n2102 TRANSISTOR DH3725 transistor bfy39 SP3725 SP2369 sp3467 2N706 2N706A 2N706B 2N706C 2N708 2N743

2n2219 equivalent

Abstract: 2N2219A BSX45 -39 BFX37 2N2605* PNP TO-18 BFX65 2N2605* PNP TO-18 BFX84 2N1711 NPN TO-39 BFX85 2N171-1 NPN TO-39 BFX86
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OCR Scan
2N1132A 2N1132B 2N2217 2N2218A BSX88 N3343 2n2219 equivalent BFY39 equivalent 2N2219 2N2905a equivalent 2N721A 2N722A

N2907

Abstract: ZT152 100 0-25 10 0 -25 120 460 2 180* 10 1000t TO-18 BCY65E 2N2605 60 45 30 0-5 10 0-5 150 â'" 0-5 30 0 -5 , 2N2605 60 45 30 0-5 10 0-5 150 â'" 0-5 30 0 -5 400 T046 â'" 2N2604 60 45 30 0-5 10 0-5 60 - 0-5 30 0 -5 , 10 1 100 - 10 150 10 , 0-25 10 1 100 â'" 10 150 10
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OCR Scan
N2907 ZT89 N2905 bcy592 N2904 ZT210 2N4037 2N3053 BC177 BC107 BCY70

LA 4138

Abstract: 2n2605 TYPES 2N2604, 2N2605 P-N-P SILICON TRANSISTORS B U L L E T IN N O . D L -S 7 3 1 1 9 6 6 , M A R C H 1973 FOR LO W -LEVEL, LOW -NOISE, H IG H -G A IN A M P L IF IE R A PPLICATIO N S · · · · ` mechanical data For Complementary Use with 2N 929, 2N 930, 2N 2483, 2N 2484, and 2N 2586 Guaranteed hpg at 10 /¿A, -55°C and 2 5 °C Low Noise Characteristics Usable at Collector Currents as Low as 1 m A THE , S . T E X A S 7 S 22 2 TYPES 2N2604, 2N2605 P-N-P SILICON TRANSISTORS ^electrical
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OCR Scan
LA 4138

BC107 equivalent transistors

Abstract: BC140 equivalent F013 13 BAW63A D2 BS9302 F002* 15 BFS37 L3 2N2605 BS9365 F026 13 BAW63B D3 BS9302 F003* 15 BFS37A L4 , 0.25 120 460 2 1801 10 1000* TO-18 BCY65E 2N2605 60 45 30 0.5 10 0.5 150 â'" 0.5 30 0.5 400 TO-46 -
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OCR Scan
BFS36 BAW63 BFS36A BZX88-C7V5 BC107 equivalent transistors BC140 equivalent BCY71 BS 2N3053 equivalent BZX88-C18 BAW64 BFS38 BAW65
Showing first 20 results.