2N2483 2N2484 50JKA - Datasheet Archive

 

- PHILIPS INTERNATIONAL 5bE D â-  711002b 0042b0b 1DQ HIPHIN SILICON PLANAR TRANSISTORS N-P-N transistors in TO-18

 

2N2483 2N2483 2N2484 2N2484 - PHILIPS INTERNATIONAL 5bE D â-  711002b 0042b0b 1DQ HIPHIN SILICON PLANAR TRANSISTORS N-P-N transistors in TO-18 metal envelopes with the collector connected to the case. These transistors are primarily intended for use in high performance, low-level, low-noise amplifier applications both for direct current and frequencies of up to 100 MHz. QUICK REFERENCE DATA 2N2483 2N2483 2N2484 2N2484 Collector-base voltage (open emitter) vCBO max 60 60 V Collector-emitter voltage (open base) VCEO max 60 60 V Collector current (peak value) 'cm max 50 50 mA Total power dissipation up to Tamb = 25 °C ptot max 360 360 mW Junction temperature Ti max 200 200 OC D.C. current gain at Tj = 25 °C IC=10/!A;Vce = 5V hFE > < 40 120 100 500 lc= 1mA;VCE = 5V hFE > 175 250 IC= 10 mA; Vqe = 5 V hFE < 500 800 Transition frequency lC = 0,5 mA; VCE = 5 V fT typ 80 80 MHz Noise figure at Rs = 10 kS2 lC = 10 juA; VCE = 5 V; B = 15,7 kHz F < 4 3 dB MECHANICAL DATA Fig. 1 TO-18. Collector connected to case Dimensions in mm I 4,8 max 4_ - 5,3 _ max 12,7min J 0,51 I max A August 1990 729 This Material Copyrighted By Its Respective Manufacturer 2N2483 2N2483 2N2484 2N2484 _J_ PHILIPS INTERNATIONAL SbE » â-  711DflSb 0042bD7 047 «PHIN RATINGS T-29-19 T-29-19 Limiting values in accordance with the Absolute Maximum System (IEC 134) Collector-base voltage (open emitter) vcbo max. 60 v Collector-emitter voltage (open base) vceo max. 60 v - Emitter-base voltage (open collector) vebo max. 6 v - Collector current (peak value) 'cm max. 50 m a - Total power dissipation up to Tamb = 25 °C ptot max. 360 mW Storage temperature range Tstg -65 to +150 OC - Junction temperature ti max. 200 oc THERMAL RESISTANCE _ From junction to ambient in free air Rth j-a = 480 K/W From junction to case Rth j-c = 150 K/W - 730 August 1990 This Material Copyrighted By Its Respective Manufacturer Silicon planar transistor PHILIPS INTERNATIONAL SbE D CHARACTERISTICS Tj = 25 °C unless otherwise specified Collector cut-off current le = 0; Vcb = 45 V IE = 0; Vcb=45 V;Tj = 150 °C Emitter cut-off current lC = 0; VEb = 5V Base-emitter voltage IC = 0,1 mA;VcE = 5V Collector-emitter saturation voltage lc = 1 mA; Ib = 0,1 mA D.C. current gain IC= 1 jUA; VcE = 5 V IC= 10 i