| Fulltext Datasheet Results |
1 - 50 of about 89 for 2N2483 |
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First line: Data Sheet 2C2484 Chip Type 2C2484 Geometry 0307 Polarity Generic Packaged Part: 2N2483, 2N2484, 2N2920, 2N930 Chip type 2C2484 Semicoa Semiconductors provides performance similar these devices. Abstract: .. 2N2483, 2N2484 2N2484 , 2N2920 2N2920 , 2N930 2N930 . Chip type 2C2484 2C2484 by Semicoa Semi-conductors provides performance similar to these devices. Product Summary: Part Numbers: 2N930 2N930 , 2N2483, 2N2484 2N2484 , 2N2920 2N2920 . APPLICATIONS .. Tags: lexan 244r 2n930 equivalent 2n2484* 2n2483 2N2483 2N2484 2N2920 2N930 |
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First line: 2N2483 Dimensions (inches). Bipolar Device Hermetically sealed TO18 Metal Package. Abstract: .. 2N2483. Bipolar NPN Device. VCEO = 60V IC = 0.05A. All Semelab hermetically sealed products can be processed in accordance with the requirements of BS, CECC and JAN, JANTX, JANTXV and JANS specifications .. Tags: 2n2483 2N2483 |
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First line: J 2N2484 2N2483 2N2484 PHILIPS INTERNATIONAL 711002b 0042b0b HIPHIN SILICON PLANAR TRANSISTORS N-P-N transistors TO-18 metal envelopes with collector connected case. These transistors primarily intended high performance, low-level, low-noise amplifier applications both direct current frequencies MHz Abstract: .. 2N2483 2N2484 2N2484 - PHILIPS INTERNATIONAL 5bE D â– 711002b 711002b 0042b0b 0042b0b 1DQ HIPHIN SILICON PLANAR TRANSISTORS N-P-N transistors in TO-18 TO-18 metal envelopes with the collector connected to the case. These .. Tags: J 2N2484 datasheet abstract.. |
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First line: BC107 equivalent transistors bc107 transistor bf241 replacement BC107 2n3019 equivalent Replacement list REPLACEMENT/WITHDRAWAL TYPES following type numbers were previous issue this data handbook, current version: TYPE NUMBER 2N2297 2N2483 2N2904; 2N2904A 2N3020 2N3053 2N3439; 2N3440 2N4030 2N4032 2 Abstract: .. 2N2483 Replaced by 2N2484 2N2484 . 2N2904 2N2904 ; 2N2904A 2N2904A Replaced by 2N2905A 2N2905A . 2N3020 2N3020 Replaced by 2N3019 2N3019 . 2N3053 2N3053 Replaced by BSX45 BSX45 . 2N3439 2N3439 ; 2N3440 2N3440 Replaced by TO92 TO92 MPSA44 MPSA44 ; MPSA45 MPSA45 or BF487 BF487 BF483 BF483 . pinning 2N4030 2N4030 .. Tags: 2n3019 equivalent bf241 bc107 transistor BC107 equivalent transistors transistor BF451 Transistor BC109C* transistor bc107b Transistor BC107 transistor 2n4403 datasheet transistor 2N4033 transistor 2n3053 Transistor 2N2222A to126 replacement BC107 MPSA44, TO92 2N2297 2N2483 2N2904 2N2904A 2N3020 2N3053 2N3439 2N3440 2N4030 2N4032 2N4123 2N4125 2N4400 2N4402 2N930 2N3019 2N2484 2N2905A 2N4031 2N4033 2N4124 2N4126 2N4401 2N4403 2N2222A |
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First line: Ch'.pTIiitknfiSa kfilp, DimDn=hj:i AujOs* Pads Min. SopnrstL^Mi Belwem [kindirlfl Ta-iT- Distanti) Mrcr.fli P;idi CIMp 2.26 Nlii Specilicationi verse SLda, Abstract: .. 2N2484 2N2484 2N2483. NPN SILtCQN TRANSISTOR CH IPS DESIGNED. FOR HYBR ID CIRCU IT APP LlCAT IONS. '--- - ,,.,- -- .""'..,. .. .. """".. ..'.. .. .-. .. , ,,.., .,.., . .. , _ . ~'" ~ 1 .. Tags: datasheet abstract.. |
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First line: A1ER PHLPS/DSCRETE bb53^31 0020101 2N2483 2N2484 SLCON PLANAR TRANSSTORS N-P-N transistors TO-18 metal envelopes with collector connected case. These transistors primarily intended high performance, low-level, low-noise amplifier Abstract: .. I I N AI1ER PHILIPS/DISCRETE blE D â– bb53 bb53 ^31 0020101 Tb7 2N2483 2N2484 2N2484 IAPX I SILICON PLANAR TRANSISTORS N-P-N transistors in TO-18 TO-18 metal envelopes with the collector connected to the case. These .. Tags: datasheet abstract.. |
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First line: 2N3799 2n2222 J 2N2906 2n390g* 2N390G TRANSISTOR SPRRGUE TRANSISTOR ARRAYS SERIES QUAD TRANSISTOR ARRAYS Sprague Series quad transistor arrays general-purpose silicon transistor arrays consisting four independent transistors. Shown eight types, Five types, nine NPN/PNP dual complementary pairs. thes Abstract: .. 30 100 — 150 10 200 8.0 400 150 2N2222 2N2222 /2N2907 2N2907 TPQ6100 TPQ6100 60 40 5 10 lb — 1.0 5 51 4.0 250 1.0 2N2483/2N3798 2N3798 TPQ6100A TPQ6100A 60 45 5 10 150 — 1.0 5 50 4.0 250 1.0 2N2484 2N2484 /2N3799 2N3799 Two NPN/Two PNP Devices - Figure .. Tags: 2N390G TRANSISTOR 2n390g* J 2N2906 2n2222 2N3799 datasheet abstract.. |
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First line: TRANSISTR CHIPS Abstract: .. n M M ■z. O HIGH GAIN - SMALL SIGNAL NPN 100% Probe Tested to These Parameters @ 25 C 2N2483 2N2484 2N2484 2N930 2N930 DN2484 DN2484 hFE @VCE= 5V @lc= 10/iA 40-120 100-500 100-300 150-500 @là 100/ ImA 75 Min 175 Min 200 .. Tags: datasheet abstract.. |
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First line: 2N3638A 2N3731 2N2706 2N3638 2N4148 DIGITRON ELECTRONIC CORP OODGDDS Page DIQITRON ELECTRONIC" Hillside Avenue Springfield, Jersey 07081 201-379-9016 201-379-9019 201-467-8065 JOHN SCHWARTZ ENGINEERING Abstract: .. : ^ ^ Ref: No. TYPES TO BE ADDED 2N2419A 2N2419A 2N3001 2N3001 2N3730 2N3730 2N4002 2N4002 2N4140 2N4140 2N4299 2N4299 2N2483 2N3002 2N3002 2N3731 2N3731 2N4003 2N4003 2N4141 2N4141 2N4348 2N4348 2N2484 2N2484 2N3003 2N3003 2N3732 2N3732 2N4015 2N4015 2N4142 2N4142 2N4 3 9 8 2N2484A 2N2484A 2N3004 2N3004 2N3738 2N3738 2N4016 2N4016 2N4143 2N4143 .. Tags: 2N4148 2N3638 2N2706 2N3731 2N3638A datasheet abstract.. |
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First line: 2X PNP TRANSistors* 2n3904 npn transistor 2n2222 2n3725a PIN CONFIGURATION 2N2222 Quad Transistors* TO-116 Case Dip) TC(@ Total Equal Power) type description bvcbo BVceo BVebo 'cbo (na) >vCBO (ma) vce(sa <ma) <PF) (MHz) (<tB) *off (ns) comments configuration** mpq2222 AMPL/SWITCH 0.40 2N Abstract: .. -- 15 4X 2N2369 2N2369 A mpq2483 mpq2483 NPN LOW NOISE 60 40 6.0 20 45 150 10 0.50 10 8.0 50 3.0 - 4X 2N2483 A mpq2484 mpq2484 NPN LOW NOISE 60 40 6.0 20 45 300 10 0.50 10 8.0 50 2.0 - 4X 2N2484 2N2484 A mpq2907 mpq2907 PNP AMPL/SWITCH 60 40 5.0 50 30 .. Tags: PIN CONFIGURATION 2N2222 2n3725a transistor 2n2222 2n3904 npn 2X PNP TRANSistors* datasheet abstract.. |
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First line: 2n2222 similar SEMICONDUCTOR NETWORKS STANDARD PRODUCTS SILICON PLANAR QUAD TRANSISTORS Devices this range consist four electrically isolated transistors encapsulated single moulded ceramic dual in-line package. Their applications range from small signal amplification through medium power switching Abstract: .. FF2483J FF2483J Moulded DIL Ceramic DIL 4 isolated n-p-n transistors similar to 2N2483 Designed for low level, low noise, high gain amplifier circuits FF2484E FF2484E FF2484J FF2484J Moulded DIL Ceramic DIL 4 isolated .. Tags: 2n2222 similar datasheet abstract.. |
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First line: 2N3725A 2n930 price BFQ36 bc325 bf179 Metal Metal Product Variations TO-5, TO-39 TO-18 supplied with several variations from standard. Lead Finish standard lead finishes supplied Texas Instruments gold coated unless otherwise stated either these finishes will supplied depending current stock/ availa Abstract: .. 60 60 6 50 50 1 175 — 1 250 — 0.01 40 120 0.01 100 500 60 60 1 1 350 350 Complementary to 2N2483 "1 Complementary to 2N2484 2N2484 / ow lse 2N929 2N929 2N930 2N930 NPN NPN T018 T018 T018 T018 45 45 5 45 45 5 30 30 0 5 60 — 0.5 150 — 0.01 40 120 0.01 .. Tags: bf179 bc325 BFQ36 2n930 price 2N3725A datasheet abstract.. |
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First line: 2n3904, itt 2n2222 itt 2n3904 TRANSISTOR REPLACEMENT GUIDE itt 3904 itt 3906 SPRRGUE TRANSISTOR ARRAYS SERIES QUAD TRANSISTOR ARRAYS Sprague Series quad transistor arrays general-purpose silicon transistor arrays consisting four independent transistors. Shown eight types, Five types, nine NPN/PNP du Abstract: .. 100 — 150 10 200 8.0 400 150 2N2222 2N2222 /2N2907 2N2907 TPQ6100 TPQ6100 60 40 5 10 lb — 1.0 5 51 4.0 250 1.0 2N2483/2N3798 2N3798 TPQ6100A TPQ6100A 60 45 5 10 150 — 1.0 5 50 4.0 250 1.0 2N2484 2N2484 /2N3799 2N3799 Two NPN/Two PNP Devices - Figure 4 TPQ650I TPQ650I .. Tags: itt 3906 itt 3904 2n3904 TRANSISTOR REPLACEMENT GUIDE 2n2222 itt 2n3904, itt datasheet abstract.. |
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First line: 2n930 price Metal Metal Product Variations TO-5, TO-39 TO-18 supplied with several variations from standard. Lead Finish standard lead finishes supplied Texas Instruments gold coated unless otherwise stated either these finishes will supplied depending current stock/ availability situation. specify Abstract: .. 60 60 6 50 50 1 175 — 1 250 — 0.01 40 120 0.01 100 500 60 60 1 1 350 350 Complementary to 2N2483 "1 Complementary to 2N2484 2N2484 / ow lse 2N929 2N929 2N930 2N930 NPN NPN T018 T018 T018 T018 45 45 5 45 45 5 30 30 0 5 60 — 0.5 150 — 0.01 40 120 0.01 .. Tags: 2n930 price datasheet abstract.. |
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First line: 2N2907 equivalent 2n222a npn 2N222A* 2n222a 2n222a datasheet Quad Transistors TO-116 Case DIP) 25oC)=3.0 Watts Total Equal Power) TYPE DESCRIPTION BVCBO BVCEO BVEBO ICBO MPQ2222 MPQ2222A MPQ2369 MPQ2483 MPQ2484 MPQ2907 MPQ2907A MPQ3467 MPQ3725 MPQ3725A MPQ3762 MPQ3798 MPQ3799 MPQ3904 MPQ3906 AMPL/SW Abstract: .. MPQ2483 MPQ2483 NPN LOW NOISE 60 40 6.0 20 45 150 10 0.50 10 8.0 50 3.0 - - 4X 2N2483 A. MPQ2484 MPQ2484 NPN LOW NOISE 60 40 6.0 20 45 300 10 0.50 10 8.0 50 2.0 - - 4X 2N2484 2N2484 A. MPQ2907 MPQ2907 PNP AMPL/SWITCH 60 40 5.0 50 30 50 300 0.40 150 .. Tags: 2n222a datasheet 2n222a 2N222A* 2n222a npn 2N2907 equivalent npn 2n3906 MPQ7093 mpq7053* MPQ6002 MPQ3904* MPQ3762 MPQ2907 2X PNP TRANSistors 2N3799 2N3798 2n3762 2N2222 2N222A 2N2369 2N2483 2N2484 2N2907 2N2907A 2N3467 2N3725 2N3725A 2N3762 2N3798 2N3799 2N3904 2N3906 |
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First line: 2n3904 TRANSISTOR REPLACEMENT SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-92 PACKAGE Device Type BVceo 10mA sat) Typical (MHz) Ccb@10V Typical (PF> Continuous (mA) (mW) Min. Max. lc(mA) Max. lc(mAI Ig(mA) 2N3903 2N3904 iHHj 2N3905 hhmi 2N3906 SjjMjfj 2N4123 2N4124 Abstract: .. – 150 15 200 4.0 500 360 103 Silicon Signal Transistor Electrical replacement for 2N2483 The General Electric GES2483 GES2483 is a silicon, NPN, planar, epitaxial, passivateci transistor. This transistor .. Tags: 2n3904 TRANSISTOR REPLACEMENT datasheet abstract.. |
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First line: 8134693 SEMICOA DGDDIEI SILICON POWER TRANSISTORS (Cont'd) Device Type Dissipation (Case) Watts (Cont.) Amps Volts Abstract: .. 5 45 7 2 10 15.7 TO-18 TO-18 2N3964 2N3964 2N2511 2N2511 2N2483 2N2483/46 360 45 †45 . 25Ö/5Ö0 O.Ol 0.2B à Ô/0.5 50 6 2 TO-18 TO-18 360 360 400 80 60 60 50 60 60 7 6 6 120/ 40/120 40/500 0.01 0.01 0.01 1 0.35 0.35 5/0.5 1/0.1 1 .. Tags: 2N3340 2N5609 2N3581* datasheet abstract.. |
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First line: 2N6428(A) AMER PHILIPS/DISCRETE bbS3131 GQlbna T-2.7-0J Small Signal Devices GENERAL PURPOSE SWITCHING TRANSISTORS TYPES TYPE v"-." (typ) r=;"" (n>A) CmA) (MHz) (mA) 2N1613 TO-39 Abstract: .. 20 60 10 400 10 2N2369 2N2369 TO-18 TO-18 15 200 40 120 10 500 10 2N2369A 2N2369A TO-18 TO-18 15 200 40 120 10 500 10 2N2483 TO-18 TO-18 60 50 40 120 .01 60 .5 2N2484 2N2484 TO-18 TO-18 60 50 100 500 .01 60 .5 2N3019 2N3019 TO-39 TO-39 80 1000 100 300 150 100 50 2N3020 2N3020 TO .. Tags: 2N6428(A) datasheet abstract.. |
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First line: MHQ2483 (SILICON) MHQ2484 QUAD DUAL-IN-LINE HERMETIC SILICON ANNULAR AMPLIFIER TRANSISTORS designed low-level, high-gain amplifier applications. Noise Figure 15.7 3.0dB (Typ) MHQ2483 (Typ) MHQ2484 Transistors Similar 2N2483 2N2484 TO-116 Ceramic Package Compact Size Compatible with Automatic Inserti Abstract: .. 15.7 kHz NF = 3.0dB Typ - MHQ2483 MHQ2483 = 2.0 dB Typ - MHQ2484 MHQ2484 †Transistors Similar to 2N2483 and 2N2484 2N2484 †TO-116 TO-116 Ceramic Package - Compact Size Compatible with lc Automatic Insertion Equipment .. Tags: datasheet abstract.. |
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First line: 2n2484 complementary bc143 bc325 BC303 BFT37 Metal Core Drivers Maximum ratin Device Type hFE1 HFE2 sat) Max. Max. Max. Case min. toff Notes min. max. min. max. 2N3724A T039 1200 1500 0.20 ^Guaranteed switching time 2N3725A T039 1200 1500 0.26 Abstract: .. BC325 BC325 BC326 BC326 BCW34 BCW34 NPN BC142 BC142 BC301 BC301 BC302 BC302 BFT32 BFT32 BFT33 BFT33 BFT34 BFT34 T018 T018 PNP 2N2483 2N2484 2N2484 BCW35 BCW35 T05 PNP BC143 BC143 BC303 BC303 BC304 BC304 BFT35 BFT35 BFT36 BFT36 BFT37 BFT37 Metal Can Core Drivers Device Type .!! 0 0.. Complementary Pairs .. Tags: BFT37 BC303 bc325 bc143 2n2484 complementary datasheet abstract.. |
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First line: 70*18 Metal-Can Package Transistors (NPN) Maximum Ratings Electrical Characteristics Unless Otherwise Specified) Type VCB0 ^ceo Vebo 'cm 'cBO 'ces ^ce(sat) meisau Freq (PA) (MA) (mA) (V)& (mA) (PF) (MHz) (mA) (dB) (MHz) 2N2483 0.36 0.05 0.01 0.01 0.35 Abstract: .. Min Min  Tc=25 c Max Max Min Max Max Min Max Min Max Typ Min Typ Max Max Max 2N2483 60 60 6 0.36 0.05 0.01 45 40 120 0.01 5 0.35 1 6 80 60 80 0.5 15 75 0.1 5 100 0.5 5 175 1 5 500 10 5 2N2484 2N2484 60 60 6 0.36 0.05 0.01 45 .. Tags: datasheet abstract.. |
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First line: SEMICONDUCTOR NETWORKS STANDARD PRODUCTS SILICON PLANAR QUAD TRANSISTORS Devices this range consist four electrically isolated transistors encapsulated single moulded ceramic dual in-line package. Their applications range from small signal amplification through medium power switching coredriving. FF Abstract: .. FF2483E FF2483E FF2483J FF2483J Moulded DIL Ceramic DIL 4 isolated npn transistors similar to 2N2483 Designed for low level, low noise, high gain amplifier circuits FF2484E FF2484E FF2484J FF2484J Moulded DIL Ceramic DIL 4 .. Tags: datasheet abstract.. |
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First line: 2n3725a Metal Metal Product Variations TO-5, TO-39 TO-18 supplied with several variations from standard. Lead Finish standard lead finishes supplied Texas Instruments gold coated unless otherwise stated either these finishes will supplied depending current stock/ availability situation. specify lead Abstract: .. 60 60 6 50 50 1 175 — 1 250 — 0.01 40 120 0.01 100 500 60 60 1 1 350 350 Complementary to 2N2483 "1 Complementary to 2N2484 2N2484 / ow lse 2N929 2N929 2N930 2N930 NPN NPN T018 T018 T018 T018 45 45 5 45 45 5 30 30 0 5 60 — 0.5 150 — 0.01 40 120 0.01 .. Tags: 2n3725a datasheet abstract.. |
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First line: 2n2484 complementary TZ554* DARLINGTON ARRAYS TPQ6700 TZ81 ffSPRPGUE BIPOLAR TRANSISTORS BIPOLAR TRANSISTORS MARK RELIABILITY SERIES MEDIUM POWER DARLINGTON ARRAYS Sprague Series devices medium-power Darlington arrays, These devices provide complements Series quad transistor consisting discrete Darl Abstract: .. 1 NPN 60 40 6 20 45 100 — 0.1 5 150 — 1 5 150 — 10 5 0.35 — 0.7 i 1 0.50 — 0.8ia 10 6 50 — 0.5 — 2N2483 TPQ2484 TPQ2484 1 NPN 60 40 6 20 45 200 — 0.1 5 300 — 1 5 300 — 10 5 0.35 — 0.7 1 0.50 — 0.8 10 6 50 — 0.5 — 2N2484 2N2484 TPQ2906 TPQ2906 2 PNP -60 .. Tags: TZ81 TPQ6700 DARLINGTON ARRAYS TZ554* 2n2484 complementary datasheet abstract.. |
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First line: sprague 2N3799 TPQ2907A TPQA05 TPQ6700 TPQ3724* SERIES QUAD TRANSISTOR ARRAYS SERIES QUAD TRANSISTOR ARRAYS PRAGUE SERIES quad transistor arrays general-purpose silicon transistor arrays consisting four independent devices. Shown types, types, NPN/PNP complementary pairs. these devices furnished 14- Abstract: .. 20 45 100 150 150 0.1 5.0 1.0 5.0 10 5.0 0.35 0.70 0.50 0.80 See Note 1 1.0 10 50 0.5 6.0 2N2483 TPQ2484 TPQ2484 60 40 6.0 20 45 200 300 300 0.1 5.0 1.0 5.0 10 5.0 0.35 0.70 0.50 0.80 See Note 1 1.0 10 50 0.5 6.0 2N2484 2N2484 .. Tags: TPQ3724* TPQ6700 TPQA05 TPQ2907A sprague 2N3799 datasheet abstract.. |
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First line: 2N2539* 2N2539 2N2475 TO-18 Case (Continued) type description bvcbo bvceo bvebo VCBC vce(sat) toff (HA) (mA) (mA) (pf) (mhz) (dB) (ns) (ns) "icev 2N957 RF/IF 2N978 AMPL/SWITCH 2N995 SWITCH 0.005 2N996 SWITCH 0.005 Abstract: .. 20 15 2N2483 NPN LOW NOISE 60 60 6.0 0.01 45 40 120 0.01 5.0 0.35 1.0 6.0 60 4.0 .. .. 2N2484 2N2484 NPN LOW NOISE 60 60 6.0 0.01 45 100 500 0.01 5.0 0.35 1.0 6.0 60 2,0 .. .. 2N2501 2N2501 NPN SAT SWITCH 40 20 6.0 - - .. Tags: 2N2475 2N2539 2N2539* datasheet abstract.. |
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First line: BT2222 2N2944 2N2708 BT2222A Discrete Devices Beam Lead Chips Transistor Chips 100% Probed Parameters (Partial List) Mech. Outline Owg. Function Polarity Type Similar bvcbo bvceo bvebo VcE(Sat) Ic/lb Ident. Type Volts Volts Volts Min/Max Volts mA/mA Code1 Level BT929 2N929 40/120 0.01 0.35 1/0.1 Amp Abstract: .. 1 60 1 RL NPN BT2483 BT2483 2N2483 60 60 6 40/120 0.01 0.36 1/0.1 60 1 RL NPN BT2484 BT2484 2N24B4 2N24B4 60 60 6 100/500 0.01 0.35 1/0.1 60 1 RL PNP BT2604 BT2604 2N2604 2N2604 60 45 6 40/120 0.01 0.5 10/0.5 80 1 SP PNP BT2605 BT2605 2N2605 2N2605 60 45 6 100 .. Tags: BT2222A 2N2708 2N2944 BT2222 datasheet abstract.. |
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First line: bc182l silect Silicon Transistors Type Case Maximum Ratings amb. Characteristics vce(sat) P.o, Min. Max. Min. Max. Mc/s Abstract: .. 0-3 0-01 40 120 0-5 30 10 0-5 10 2N930 2N930 T018 T018 P 45 45 5 003 0-3 001 100 300 0-5 30 10 0-5 1-0 2N2483 T018 T018 P 60 60 6 005 0-36 001 40 120 0-5 60 1-0 0-1 0-35 2 N2484 N2484 T018 T018 P 60 60 6 005 0-36 001 100 500 0-5 60 10 0-1 0-35 2S501 2S501 .. Tags: silect bc182l datasheet abstract.. |
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First line: 3N107 SPROGUE Metal-Encased Silicon SEPT" Transistors DUAL EMITTER TRANSISTORS These dual-emitter silicon planar epitaxial transistors specifically designed low-level high speed chopper commutating applications. They feature high voltage ratings, offset voltages, emitter capacitances excellent Abstract: .. 40-500 10 1 0.20 0.80 20 8 2 Package 2N4414A 2N4414A PNP 600 60 60 5 10 40-500 10 1 0.20 0.80 20 8 2 2N2483 NPN 400 60 60 6 10 40-120 1 0.1 0.35 0.70 60 fi 4 2 N 2484 NPN 400 60 60 6 10 100-500 1 0.1 0.35 0.70 60 6 3 2N4384 2N4384 NPN .. Tags: 3N107 datasheet abstract.. |
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First line: MPQ6600 MPQ6100, MPQ6100A MPQ6600, MPQ6600A QUAD DUAL-IN-LINE SILICON ANNULAR COMPLEMENTARY PAIR TRANSISTORS designed amplifier applications complementary circuitry. Current Gain Specified lOOpAdc mAdc Current-Gain-Bandwidth Product (Xyp) mAdc Transistor Similar 2N2483 2N2484 Transistor Similar 2N37 Abstract: .. - fT* 125 MHz Xyp  lc * 0.5 mAdc †NPN Transistor Similar to 2N2483 or 2N2484 2N2484 †PNP Transistor Similar to 2N3798 2N3798 or 2N3799 2N3799 †MPQ6600 MPQ6600 .A Matching Characteristics Available as Specials on .. Tags: MPQ6600 datasheet abstract.. |
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First line: N2219 2N1991 Type sedelab Reliability Option Polarity Package VceO Abstract: .. NPN TOI 8 45 0.1 50min 50min 5/lm 20M 0.3 2N2453 2N2453 HI-REL NPN * T077 T077 40 0.05 150-600 5/10m 60M 1.2 2N2483 HI-REL NPN * T018 T018 60 50m 80min 80min 5/lm 0.36 2N2484 2N2484 HI-REL NPN * TOI 8 60 50m 150min 150min 5/lm 0.36 2N2501 2N2501 SCREEN NPN .. Tags: 2N1991 N2219 datasheet abstract.. |
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First line: Silicon Transistors Silicon Planar Transistors low-level audio applications Common maximum ratings ptot 300mW (TO-18)1 200mW (Plastic TO-18) (TO-18)1 (Plastic TO-18) Type Maximum ratings Characteristics Tamb Plastic TO-18 BVcfo BVcso \CM Abstract: .. NKT - - - - - - - 1051-SZNKT10519 1051-SZNKT10519 2N 929 2 2N2483 2 2N2484 2N2484 3. 2~ 45 25 45 45 60 60. 50 5 200 25 5 100 45 5 30 40 45 5 30 _ 100 __..9_0__ 50 __ 6 40 60 6 50 100 ----------~-. .. .. .. .. 120 300 120 500. 250 .. 400 .. Tags: datasheet abstract.. |
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First line: transistor t05 C644 NPN C460 C372 transistor C372 Metal Metal Product Variations TO-5, TO-39 TO-18 supplied with several variations from standard. Lead Finish standard lead finishes supplied Texas Instruments gold coated unless otherwise stated either these finishes will supplied depending current s Abstract: .. 60 60 6 50 50 1 175 — 1 250 — 0.01 40 120 0.01 100 500 60 60 1 1 350 350 Complementary to 2N2483 "1 Complementary to 2N2484 2N2484 / ow lse 2N929 2N929 2N930 2N930 NPN NPN T018 T018 T018 T018 45 45 5 45 45 5 30 30 0 5 60 — 0.5 150 — 0.01 40 120 0.01 .. Tags: transistor C372 C372 NPN C460 C644 transistor t05 datasheet abstract.. |
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First line: 2n2484 complementary 2n930 price BFQ36 transistor t05 bc325 Metal Metal Product Variations TO-5, TO-39 TO-18 supplied with several variations from standard. Lead Finish standard lead finishes supplied Texas Instruments gold coated unless otherwise stated either these finishes will supplied depending Abstract: .. 60 60 6 50 50 1 175 — 1 250 — 0.01 40 120 0.01 100 500 60 60 1 1 350 350 Complementary to 2N2483 "1 Complementary to 2N2484 2N2484 / ow lse 2N929 2N929 2N930 2N930 NPN NPN T018 T018 T018 T018 45 45 5 45 45 5 30 30 0 5 60 — 0.5 150 — 0.01 40 120 0.01 .. Tags: bc325 transistor t05 BFQ36 2n930 price 2n2484 complementary datasheet abstract.. |
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First line: bf982 BF980 BC547 smd BFG65 bd139 smd AMER P^IL-IPS/DISCRETE 1^53=131 CONVERSION CONVERSION LIST (conventional type number type number) conventional microminiature Conventional microminiature conventional microminiature type type type typ& type type BA243 BC146/02 BC849B/C BC338 BC818 BA314 BAS1 Abstract: .. BSR14 BSR14 PMBT2222A PMBT2222A 2N2297 2N2297 BSR40 BSR40 2N2368 2N2368 BSV52 BSV52 2N2369 2N2369 BSV52 BSV52 2N2369A 2N2369A BSV52 BSV52 2N2483 BC850B BC850B 2N2484 2N2484 BC850B BC850B /C 2N894A 2N894A BSR12 BSR12 2N2905 2N2905 BSR15 BSR15 2N2905A 2N2905A BSR16 BSR16 2N2907 2N2907 BSR15 BSR15 PMBT2907 PMBT2907 2N2907A 2N2907A BSR16 BSR16 PMBT2907A PMBT2907A 2N3019 2N3019 .. Tags: bd139 smd BFG65 BC547 smd BF980 bf982 datasheet abstract.. |
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First line: 2N2464 2N915 2N3700 DIE 2N2210 2N2464* GENERAL TRANSISTOR CORP 3T5fl001 0000074 General Transistor Corporation WEST FLORENCE AVENUE INGLEWOOD, CALIFORNIA 90301 (213) 673-8422 Telex 65-3474 (213) 672-2905 General Purpose Abstract: .. MNMAX etc mA VCE S V MAX AT mA Ir MHi ts tOFF nt PACKAGE 2N930 2N930 2N2483 2N2464 2N2464 300 360 360 45 60 60 100/500 40/120 100/500 0.01 0.01 0,01 1 0.35 0.35 10/0.5 1/0.1 1/0.1 30 60 60 3 4 3 TO-18 TO-18 a hf .. Tags: 2N2464* 2N2210 2N3700 DIE 2N915 2N2464 datasheet abstract.. |
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First line: BC312 BC312* bc143 Metal High Current Amplifiers Case Outlines Device Type Case Maximum ratings hFEl min. max. hFE2 min. max. VCE(sat) Available Notes BFT39 BFT40 BFT41 T039 T039 T039 1000 1000 1000 1000 1000 1000 BFT29 BFT30 BFT31 BFY50 BFY51 BFY52 T039 T039 T039 1000 1000 1000 1000 1000 1000 BFT53 Abstract: .. BC325 BC325 BC326 BC326 BCW34 BCW34 NPN BC142 BC142 BC301 BC301 BC302 BC302 BFT32 BFT32 BFT33 BFT33 BFT34 BFT34 T018 T018 PNP 2N2483 2N2484 2N2484 BCW35 BCW35 T05 PNP BC143 BC143 BC303 BC303 BC304 BC304 BFT35 BFT35 BFT36 BFT36 BFT37 BFT37 Metal Can High Current NPN Amplifiers Device Type BFT39 BFT39 BFT40 BFT40 BFT41 BFT41 .. Tags: bc143 BC312* BC312 datasheet abstract.. |
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First line: 2483 SILICON PLANAR 2484 LOW-LEVEL, LOW-NOISE AMPLIFIERS 2483 2484 silicon planar epitaxial transistors Jedec TO-18 metal case. They designed high-performance, low-noise amplifier circuits from audio high-frequency. VcBO Collector-base voltage VCEO Collector-emitter voltage Vebo Emitter-base voltage Abstract: .. = 1 mA VCE = 5V for 2N 2483 3x10 3x10 " 8x10 8x10 " _ for 2N 2484 4.25x10 25x10 " 8x10 8x10 " 259 2N2483 2N2484 2N2484 ELECTRICAL CHARACTERISTICS continued Parameter Test conditions Min. Typ. Max. Unit hoe* Output admittance .. Tags: datasheet abstract.. |
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First line: bc143 Metal Case Outlines Collector 4-95J0 0-76 0-480 2-7h Abstract: .. BC325 BC325 BC326 BC326 BCW34 BCW34 NPN BC142 BC142 BC301 BC301 BC302 BC302 BFT32 BFT32 BFT33 BFT33 BFT34 BFT34 T018 T018 PNP 2N2483 2N2484 2N2484 BCW35 BCW35 T05 PNP BC143 BC143 BC303 BC303 BC304 BC304 BFT35 BFT35 BFT36 BFT36 BFT37 BFT37 Metal Can Case Outlines High Frequency Transistors 0 76 max Device .. Tags: bc143 datasheet abstract.. |
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First line: 2N2475 2N2108 2N2846 2N2970* 2N2970 SEMCONDUCTOR TECHNOLOGY, SLCON TRANSSTORS SMALL SGNA transistors SEMCONDUCTOR TECHNOLOGY fll3b45fl 3131 S.E. Street Stuart, Florida 34997 (407) 283-4500 510-953-7511 Power VCBO VCE(SAT.)@C TYPE Polarity Dissipation VCEO CASE Abstract: .. 500 200 100 60 60 100 3.0 10 160 160 T0-18 T0-18 2N2475 2N2475 NPN 300 200 15 6.0 20 20 50 — _ 6.0 _ T0-18 T0-18 2N2483 NPN 360 200 60 60 40 120 .01 .35 1.0 80 12 T0-18 T0-18 2N2484 2N2484 NPN 360 200 60 60 100 500 .01 .35 1.0 150 15 T0-18 T0-18 2N2509 2N2509 .. Tags: 2N2970 2N2970* 2N2846 2N2108 2N2475 datasheet abstract.. |
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First line: BT2222A 2n22 Transistors (Cont.) Discrete Devices Ultra High-Speed Logic Switches Type Maximum Ratings Electrical Characteristics Package Ambient Volts Volts Volts VcE(Sat) lC/lB tOFF Min/Max Volts mA/mA 2N706 20/- 10/1 TO-18 2N706A 20/60 10/1 TO-18 2N706B 20/60 10/1 TO-18 Abstract: .. /0.1 60 1 RL Amplifier NPN BT930 BT930 2N930 2N930 45 45 5 100/500 0.01 0.35 1/0.1 60 1 RL NPN BT2483 BT2483 2N2483 60 60 6 40/120 0.01 0.36 1/0.1 60 1 RL NPN BT2484 BT2484 2N24B4 2N24B4 60 60 6 100/500 0.01 0.35 1/0.1 60 1 RL PNP BT2604 BT2604 2N2604 2N2604 .. Tags: 2n22 BT2222A datasheet abstract.. |
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First line: BT2222A Transistors (Cont.) Discrete Devices General Purpose Amplifiers (Cont.) Type Polarity Maximum Ratings Electrical Characteristics Package Ambient Volts Volts Volts VcE<Sat)@lc/lB Min/Max Volts mA/mA 2N2897 50/200 500/50 TO-18 2N2898 40/120 500/50 T046 2N2899 60/200 500/50 Abstract: .. 1 60 1 RL NPN BT2483 BT2483 2N2483 60 60 6 40/120 0.01 0.36 1/0.1 60 1 RL NPN BT2484 BT2484 2N24B4 2N24B4 60 60 6 100/500 0.01 0.35 1/0.1 60 1 RL PNP BT2604 BT2604 2N2604 2N2604 60 45 6 40/120 0.01 0.5 10/0.5 80 1 SP PNP BT2605 BT2605 2N2605 2N2605 60 45 6 100 .. Tags: BT2222A datasheet abstract.. |
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First line: SEMICONDUCTOR NETWORKS STANDARD PRODUCTS SILICON PLANAR QUAD TRANSISTORS Devices this range consist four electrically isolated transistors encapsulated single moulded ceramic dual in-line package. Their applications range from small signal amplification through medium power switching coredriving. FF Abstract: .. FF2483J FF2483J Moulded DIL Ceramic DIL 4 isolated n-p-n transistors similar to 2N2483 Designed for low level, low noise, high gain amplifier circuits FF2484E FF2484E FF2484J FF2484J Moulded DIL Ceramic DIL 4 isolated .. Tags: datasheet abstract.. |
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First line: Transistors (Cont.) Discrete Devices Medium Current, High-Speed Amplifiers (Cont.) Type Polarity Maximum Ratings Electrical Characteristics Package Ambient Volts Volts Volts hfe@ VCE(Sat) tOFF Min/Max Volts mA/mA 2N3134 100/300 150/15 TO-39 2N3135 40/120 150/15 TO-18 2N3136 100/300 150/15 TO-18 Abstract: .. /0.1 60 1 RL Amplifier NPN BT930 BT930 2N930 2N930 45 45 5 100/500 0.01 0.35 1/0.1 60 1 RL NPN BT2483 BT2483 2N2483 60 60 6 40/120 0.01 0.36 1/0.1 60 1 RL NPN BT2484 BT2484 2N24B4 2N24B4 60 60 6 100/500 0.01 0.35 1/0.1 60 1 RL PNP BT2604 BT2604 2N2604 2N2604 .. Tags: datasheet abstract.. |
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First line: 2n2509 2N929A Discrete Devices Transistors (Cont.) Level Amplifiers Type Polarity Maximum Ratings Electrical Characteristics Package Ambient Volts Volts Volts HFE<s VCE<Sat) lC/lB NF@f Min/Max Volts mA/mA 2N327A 9/22 2N327B 9/22 TO-39 2N328A 18/44 TO-39 Abstract: .. 8 .. 10 - - TO-18 TO-18 2N2483 NPN 360 60 60 6 40/120 0.01 0.35 1/0.1 SO 6 4 15.7* TO-18 TO-18 2N2484 2N2484 NPN 360 60 60 6 100/300 0.01 0.35 1/0.1 60 6 3 15.7* TO-18 TO-18 2N2484A 2N2484A NPN 360 60 60 6 100/500 0.01 0.35 1/0.1 60 6 2 10 .. Tags: 2N929A 2n2509 datasheet abstract.. |
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First line: 2N2475 Small Signal Transistors TO-18 Case (Continued) TYPE BVCBO BVCEO BVEBO ICBO (µA) *ICES **ICEV Abstract: .. 2N2483 NPN LOW NOISE 60 60 6.0 0.01 45 40 120 0.01 5.0 0.35 1.0 6.0 60 4.0 - - - -. 2N2484 2N2484 NPN LOW NOISE 60 60 6.0 0.01 45 100 500 0.01 5.0 0.35 1.0 6.0 60 2.0 - - - -. 2N2501 2N2501 NPN SAT SWITCH 40 20 6.0 - - - - 50 150 10 1.0 .. Tags: 2N978 2N2845 2N2710 2N2510 2N2509 2N2501 2N2484 2n2483 2N2475 2N2412 2N2221A datasheet abstract.. |
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First line: transistor t05 Metal Metal Product Variations TO-5, TO-39 TO-18 supplied with several variations from standard. Lead Finish standard lead finishes supplied Texas Instruments gold coated unless otherwise stated either these finishes will supplied depending current stock/ availability situation. speci Abstract: .. 60 60 6 50 50 1 175 — 1 250 — 0.01 40 120 0.01 100 500 60 60 1 1 350 350 Complementary to 2N2483 "1 Complementary to 2N2484 2N2484 / ow lse 2N929 2N929 2N930 2N930 NPN NPN T018 T018 T018 T018 45 45 5 45 45 5 30 30 0 5 60 — 0.5 150 — 0.01 40 120 0.01 .. Tags: transistor t05 datasheet abstract.. |
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First line: transistor c495 C644 transistor C735 transistor C756 TRANSISTOR C495 transistor Metal Metal Product Variations TO-5, TO-39 TO-18 supplied with several variations from standard. Lead Finish standard lead finishes supplied Texas Instruments gold coated unless otherwise stated either these finishes wil Abstract: .. 60 60 6 50 50 1 175 — 1 250 — 0.01 40 120 0.01 100 500 60 60 1 1 350 350 Complementary to 2N2483 "1 Complementary to 2N2484 2N2484 / ow lse 2N929 2N929 2N930 2N930 NPN NPN T018 T018 T018 T018 45 45 5 45 45 5 30 30 0 5 60 — 0.5 150 — 0.01 40 120 0.01 .. Tags: C495 transistor C756 TRANSISTOR C735 transistor C644 transistor transistor c495 datasheet abstract.. |
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First line: 2N2708 Discrete Devices Transistors (Cont.) Level Amplifiers Type Polarity Maximum Ratings Electrical Characteristics Package Ambient Volts Volts Volts HFE<s VCE<Sat) lC/lB NF@f Min/Max Volts mA/mA 2N327A 9/22 2N327B 9/22 TO-39 2N328A 18/44 TO-39 Abstract: .. 10 - - TO-18 TO-18 2N2483 NPN 360 60 60 6 40/120 0.01 0.35 1/0.1 SO 6 4 15.7* TO-18 TO-18 2N2484 2N2484 NPN 360 60 60 6 100/300 0.01 0.35 1/0.1 60 6 3 15.7* TO-18 TO-18 2N2484A 2N2484A NPN 360 60 60 6 100/500 0.01 0.35 1/0.1 60 6 2 10.0 .. Tags: 2N2708 datasheet abstract.. |
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First line: BT2222A 2N2708 2N929A 2N929 Discrete Devices Transistors (Cont.) Level Amplifiers Type Polarity Maximum Ratings Electrical Characteristics Package Ambient Volts Volts Volts HFE<s VCE<Sat) lC/lB NF@f Min/Max Volts mA/mA 2N327A 9/22 2N327B 9/22 TO-39 2N328A 18/44 TO-39 Abstract: .. 8 .. 10 - - TO-18 TO-18 2N2483 NPN 360 60 60 6 40/120 0.01 0.35 1/0.1 SO 6 4 15.7* TO-18 TO-18 2N2484 2N2484 NPN 360 60 60 6 100/300 0.01 0.35 1/0.1 60 6 3 15.7* TO-18 TO-18 2N2484A 2N2484A NPN 360 60 60 6 100/500 0.01 0.35 1/0.1 60 6 2 10 .. Tags: 2N929 2N929A 2N2708 BT2222A datasheet abstract.. |
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