NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
| Part | Manufacturer | Description | Type | Ordering |
| Catalog Datasheet Results | Type | Document Tags |
| Abstract: 2N2483 2N2484 2N2484 - PHILIPS INTERNATIONAL 5bE D â- 711002b 0042b0b 1DQ HIPHIN SILICON PLANAR , both for direct current and frequencies of up to 100 MHz. QUICK REFERENCE DATA 2N2483 2N2484 2N2484 , Its Respective Manufacturer 2N2483 2N2484 2N2484 _J_ PHILIPS INTERNATIONAL , gain Output admittance 2N2483 2N2484 2N2484 â- 7HGfl2h DOMBbOfi TĂ-3 *PHIN ~ T-29-19 T-29-19 'CBO < 10 nA 'CBO < 10 mA 'EBO < 10 nA VBE 0,5 to 0,7 V VCEsat < 350 mV 2N2483 2N2484 2N2484 hFE > 30 hFE 40 to ... | OCR Scan |
3 pages, |
2N2483 2N2484 J 2N2484 2N2483 abstract |
| Abstract: Data Sheet No. 2C2484 2C2484 Generic Packaged Part: Chip Type 2C2484 2C2484 Geometry 0307 Polarity NPN 2N2483, 2N2484 2N2484, 2N2920 2N2920, 2N930 2N930 Chip type 2C2484 2C2484 by Semicoa Semiconductors provides performance similar to these devices. Product Summary: APPLICATIONS: Designed for high speed switching applications. Part Numbers: Features: · High speed switching capabilities 2N930 2N930, 2N2483, 2N2484 2N2484, 2N2920 2N2920 Mechanical Specifications Metallization Bonding Pad Size Top Backside Emitter Base ... | Original |
1 pages, |
2N2484 2C2484 2N2920 2N930 2N2483 2C2484 abstract |
| Abstract: I I N AI1ER PHILIPS/DISCRETE blE D â- bb53^31 0020101 Tb7 2N2483 2N2484 2N2484 IAPX I SILICON PLANAR TRANSISTORS N-P-N transistors in TO-18 metal envelopes with the collector connected to the case. These transistors are primarily intended for use in high performance, low-level, low-noise amplifier applications both for direct current and frequencies of up to 100 MHz. quick reference data 2n2483 2n2484 , Manufacturer N APIER PHILIPS/DISCRETE b^E D â- bb53"ì31 0020102 1T3 â- APX 2N2483 2N2484 2N2484 k RATINGS Limiting ... | OCR Scan |
3 pages, |
4501 ic 2N2484 2N2483 2N2483 abstract |
| Abstract: 5 51) 4.0 250 1.0 2N2483/2N3798 TPQ6100A TPQ6100A 60 45 5 10 150 - 1.0 5 50 4.0 250 1.0 2N2484/2N3799 2N2484/2N3799 Two , 4.0 250 1.0 2N2483/2N3798 TPQ6600A TPQ6600A 60 45 5 10 150 - 1.0 5 50 4.0 250 1.0 2N2484/2N3799 2N2484/2N3799 TPQ6700 TPQ6700 40 40 ... | OCR Scan |
1 pages, |
2N3724 2n3906 npn dual J 2N2484 2N2221 TPQ2221 TPQ2222 TPQ2483 transistor pnp 3906 TPQ2484 2n2222 OF transistor 2N2222 J 2N2906 pnp 8 transistor array 2N3799 datasheet abstract |
| Abstract: 2N2483 Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed TO18 Metal Package. 5.84 (0.230) 5.31 (0.209) 4.95 (0.195) 4.52 (0.178) Bipolar NPN Device. VCEO = 60V 0.48 (0.019) 0.41 (0.016) dia. IC = 0.05A All Semelab hermetically sealed products can be processed in accordance with the requirements of BS, CECC and JAN, JANTX, JANTXV and JANS specifications 2.54 (0.100) Nom. 3 1 2 TO18 (TO206AA) PINOUTS 1 Â Emitter Parameter 2 Â Base 3 Â Collector ... | Original |
1 pages, |
2N2483 2N2483 abstract |
| Abstract: TRANSISTOR CHIPS 3 HIGH GAIN - SMALL SIGNAL NPN ... | OCR Scan |
1 pages, |
DN2484 2N930 2N2484 2N2483 2N2483 abstract |
| Abstract: Philips Semiconductors Replacement list Selection guide REPLACEMENT/WITHDRAWAL TYPES The following type numbers were in the previous issue of this data handbook, but not in the current version: TYPE NUMBER REASON FOR DELETION 2N2297 2N2297 Replaced by 2N3019 2N3019 2N2483 Replaced by 2N2484 2N2484 2N2904 2N2904; 2N2904A 2N2904A Replaced by 2N2905A 2N2905A 2N3020 2N3020 Replaced by 2N3019 2N3019 2N3053 2N3053 Replaced by BSX45 BSX45 2N3439 2N3439; 2N3440 2N3440 Replaced by TO92 MPSA44 MPSA44; MPSA45 MPSA45 or BF487 BF487 (BF483 BF483 pinning) 2N4030 2N4030 ; 2N4032 2N4032 ... | Original |
1 pages, |
BC376 bf241 bc107 transistor BC107 equivalent transistors transistor 2n3053 2N3053 equivalent semiconductors replacement guide 2n2222a REPLACEMENT BD827 BCY56 transistor BF451 bcy71 replacement 2n4125 equivalent 2N2297 2N2483 2N2297 abstract |
| Abstract: DIGITRON ELECTRONIC CORP 3bE D TîflMStrO? OODGDDS DGE Page #5 DIQITRON ELECTRONIC" 110 Hillside Avenue • Springfield, New Jersey 07081 • 201-379-9016 • 201-379-9019 Fax No. 201-467-8065 JOHN J. SCHWARTZ ENGINEERING DIGITRON ELECTRONICS, CORP. 110 Hillside Avenue Springfield, NJ 07081 DGE BOOK:transistor EDDITION: ISSUE DATE: ^ ^ Ref: No. TYPES TO BE ADDED 2N2419A 2N2419A 2N3001 2N3001 2N3730 2N3730 2N4002 2N4002 2N4140 2N4140 2N4299 2N4299 2N2483 2N3002 2N3002 2N3731 2N3731 2N4003 2N4003 2N4141 2N4141 2N4348 2N4348 2N2484 2N2484 2N3003 2N3003 2N3732 2N3732 2N4015 2N4015 2N4142 2N4142 2N4 3 9 8 ... | OCR Scan |
1 pages, |
2N4120 transistor 2N3824 2N4121 2N3732 2N4904 2N4250 2N4127 transistor 2n2706 2N3375 2N4147 2N3638A transistor 2N3819 2N2708 2N3638 transistor datasheet abstract |
| Abstract: 1-3 ¡3" TRANSISTOR CHIPS « H O z H n M M â- z. O HIGH GAIN - SMALL SIGNAL NPN 100% Probe Tested to These Parameters @ 25°C 2N2483 2N2484 2N2484 2N930 2N930 DN2484 DN2484 hFE @VCE= 5V @lc= 10/iA 40-120 100-500 100-300 150-500 @lç 100/ ImA 75 Min 175 Min 200 Min @lc= 1mA 175 Min 250 Min 300 Min VcBO , Volts Mm, @lc= 10n A lE=0 60 60 90 Vceo Volts Min. @lc= 10mA lB=0 60 60 45 60 Vebo Volts Min. @Ib= 10/iA lc=0 •cBO nA Max. @VCB 45V lE=0 10 10 10 10 Vce(SAT.) Volts Max. @lc=1mA ... | OCR Scan |
1 pages, |
DN2484 2N930 2n2484 2N2483 transistor KL datasheet abstract |
| Abstract: 3 15.7 2N5686 2N5686 300 60 45 6 6 120/360 0.01 0.5 5/0.5 45 7 2 10 15.7 TO-18 2N3964 2N3964 2N2511 2N2511 2N2483 2N2483/46 360 45 • 45 . 25Ă-/5Ă-0 O.Ol 0.2B ĂŹĂ"/0.5 50 6 2 TO-18 360 360 400 80 60 60 50 60 60 7 6 6 120 ... | OCR Scan |
1 pages, |
2N6187 2N3582 2N5003 2N5005 2N5287 2N5312 2N5316 2N5607 2N5609 2N5853 2N6186 2N2524 2N3581 2N3340 datasheet abstract |
| Abstract: for 2N 2483 3x10" 8x10" _ for 2N 2484 4.25x10" 8x10" 259 2N2483 2N2484 2N2484 ELECTRICAL ... | OCR Scan |
6 pages, |
2N2484 2N2483 datasheet abstract |
| Abstract: NPN SILICON TRANSISTORS, EPITAXIAL PLANAR TRANSISTORS NPN SILICIUM, PLANAR EPITAXIAUX 2 N 2483 *2N 2484 !f! Preferred device Dispositif recommandĂ© LF small signal amplification (low noise) Amplification BF petits signaux (faible bruit) VCEO 60 V h21E ( 40 -120 2N 2483 (NVA) (100-500 2N 2484 F ( 4 dB max 2N 2483 l 3 dB max 2N 2484 Maximum power dissipation Dissipation de puissance maximale Pto, (W) N 1 1 1 1 V® 1 1 â- -ĂśL SO 100 150 T.mbl°C> (1) T^m (2) Case TO-18- ... | OCR Scan |
8 pages, |
2N2484 datasheet abstract |
| Abstract: ) 237 2N2483 2N 2484 Contours of constant noise figure f= 100 Hz (for 2N 2484 only) 0.2061 (kfl ... | OCR Scan |
6 pages, |
2N2483 datasheet abstract |
| Abstract: JEDEC TRANSISTORS Low level amplifiers CL > t- cc < o O- o HI o > < cc @ @ < E @ 2N 760A 2N 910 2N 911 2N 929 2N 930 2N 2483 2N 2484 2N 2511 2N 2586 2N 3117 2N 3962 2N 3963 2N 3964 2N 3965 NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN PNP PNP PNP PNP 60 60 60 45 45 60 60 50 45 60 60 80 45 60 40 35/100 20/45 40/120 100/300 40/120 100/500 120 120/360 250/500 60 60 180 180 0.1 0.1 0.1 0.01 0.01 0.01 0.01 0.01 0.01 0.01 0.01 0.01 0.01 0.01 76/333 75/135 35/70 350 600 175 ... | OCR Scan |
1 pages, |
CD 910 datasheet abstract |
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| Part | Manufacturer | Description | Shortform Datasheet | Ordering |
| 2N2483 | N/A | Silicon NPN | ||
| 2N2483 | N/A | Low Power, Low Noise, General Purpose | ||
| 2N2483CHIP | Dionics, Inc. | Si NPN Lo-Pwr BJT |
| NTE Electronics Part | Industry Part |
| Part | Similar Part | Notes |
| 2N2483 Buy | 2N2523 Buy | |
| 2N2483 Buy | 2N2524 Buy | |
| 2N2483 Buy | 2N2586 Buy | |
| 2N2483 Buy | 2N3117 Buy | |
| 2N2483 Buy | 2N4104 Buy | |
| 2N2483 Buy | 2N929 Buy | |
| 2N2483 Buy | 2N929(A) Buy | |
| 2N2483 Buy | 2N929A Buy | |
| 2N2483 Buy | 2N930 Buy | |
| 2N2483 Buy | 2N930(A,B) Buy |