2N2369A - Datasheet Archive

MECHANICAL DATA Dimensions in mm (inches) HIGH SPEED, MEDIUM POWER, NPN SWITCHING TRANSISTOR IN A HERMETICALLY SEALED TO-18

2N2369A 2N2369A MECHANICAL DATA Dimensions in mm (inches) HIGH SPEED, MEDIUM POWER, NPN SWITCHING TRANSISTOR IN A HERMETICALLY SEALED TO-18 PACKAGE FOR HIGH RELIABILITY APPLICATIONS 5 .8 4 (0 .2 3 0 ) 5 .3 1 (0 .2 0 9 ) 5 .3 3 (0 .2 1 0 ) 4 .3 2 (0 .1 7 0 ) 4 .9 5 (0 .1 9 5 ) 4 .5 2 (0 .1 7 8 ) ) 0 0 1 7 2 1 . . 0 0 ( ( 3 2 3 3 . . 5 4 FEATURES 1 2 .7 (0 .5 0 0 ) m in . ) ) 0 0 5 . . 0 .4 8 (0 .0 1 9 ) 0 .4 1 (0 .0 1 6 ) d ia . n i 0 · SILICON PLANAR EPITAXIAL NPN TRANSISTOR ( m 7 . 2 1 · HERMETIC TO18 PACKAGE 2 .5 4 (0 .1 0 0 ) N o m . · CECC SCREENING OPTIONS ! TO-18 (TO-206AA) Underside View Pin 1 Emitter Pin 2 Base Pin 3 Collector ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise stated) VCBO Collector Base Voltage 40V VCEO Collector Emitter Voltage 15V VEBO Emitter Base Voltage 4.5V IC Collector Current PD Total Device Dissipation 200mA @ TA =25°C Derate above 25°C PD Total Device Dissipation @ TC =25°C Derate above 25°C 360mW 2.06mW / °C 680mW 6.85mW / °C TSTG , TJ Operating and Storage Temperature Range RJC Thermal Resistance Junction-Case 146°C/W RJA Thermal Resistance Junction-Ambient 486°C/W 65 to +200°C Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk Document Number 5277 Issue 2 2N2369A 2N2369A ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise stated) Parameter Test Conditions Min. Typ. Max. Unit V(BR)CEO* Collector Emitter Breakdown Voltage IC = 10mA 15 V V(BR)CBO Collector Base Breakdown Voltage IC = 10A 40 V V(BR)EBO Emitter Base Breakdown Voltage IE = 10A 4.5 V ICES Collector Emitter Cut-off Current VCE = 20V ICBO Collector Base Cut-off Current VCB = 20V TA = +150°C VCE(sat)* Collector Emitter Saturation Voltage IC = 10mA IB = 1mA 0.20 TA = +125°C 0.30 IC = 30mA IB = 3mA 0.25 IC = 100mA IB = 10mA 0.5 IC = 10mA IB = 1mA IC = 30mA VBE(sat)* Base Emitter Saturation Voltage 0.40 30 A 0.8 IB = 3mA 0.9 1.15 IC = 100mA IB = 10mA 1.1 1.6 IC = 10mA IB = 1mA hFE* DC Current Gain 0.59 IC = 10mA VCE = 0.35V 40 120 VCE = 1V 40 120 IC = 30mA VCE = 0.40V 30 IC = 100mA VCE = 1V 20 IC = 10mA VCE = 0.35V TA = 55°C Transition Frequency IC = 10mA VCE = 10V f = 100MHz Ccbo Output Capacitance IE = 0 VCB = 5V f = 1MHz ts Storage Time V 1.02 IC = 10mA fT V 0.85 TA = -55°C to +125°C 0.70 A IC = 10mA VCC = 10V IB1 = IB2 = 10mA 71 20 50 500 - 675 MHz 2.3 4 pF 6 13 ns ton TurnOn Time IC = 10mA VCC = 3V 9 12 toff TurnOff Time IB1 = 3mA IB2 = 1.5mA 13 18 ns * Pulse Test: tp 300s, 2%. Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk Document Number 5277 Issue 2