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2N2222 2N2222A - Datasheet Archive
2N2222A Shanghai Lunsure Electronic Technology Co.,Ltd Tel:0086-21-37185008 Fax:0086-21-57152769 Features · · High
2N2222 2N2222 2N2222A 2N2222A Shanghai Lunsure Electronic Technology Co.,Ltd Tel:0086-21-37185008 Fax:0086-21-57152769 Features · · High current (max.800mA) Low voltage (max.40V) NPN Switching Transistors Maximum Ratings Symbol VCEO 30 40 V 60 75 V 2N2222 2N2222 2N2222A 2N2222A IC ICM IBM TJ TSTG Unit 2N2222 2N2222 2N2222A 2N2222A VEBO Rating 2N2222 2N2222 2N2222A 2N2222A VCBO Rating Collector-Emitter Voltage 5.0 6.0 800 800 200 -55 to +150 -55 to +150 V mA mA mA O C O C Max Unit 500 1.2 146 350 mW W K/W K/W TO-18 Collector-Base Voltage Emitter-Base Voltage Collector Current (DC) Peak Collector Current Peak Base Current Operating Junction Temperature Storage Temperature Thermal Characteristics Symbol Ptot RJC RJA Rating Total power Dissipation TA25 TC25 Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Electrical Characteristics @ 25OC Unless Otherwise Specified Symbol Parameter Min Max Units - 10 10 10 10 10 nAdc uAdc nAdc uAdc nAdc 35 50 75 50 100 300 30 40 - OFF CHARACTERISTICS ICBO IEBO hFE hFE Collector cut-off current 2N2222 2N2222 (VCB=50Vdc, IE=0) (VCB=50Vdc, IE=0,TA=150) (VCB=60Vdc, IE=0) 2N2222A 2N2222A (VCB=60Vdc, IE=0,TA=150) Emitter Cut-off current (IC=0, VEB=3Vdc) DC Current Gain (IC=0.1mAdc, VCE=10Vdc) (IC=1.0mAdc, VCE=10Vdc) (IC=10mAdc, VCE=10Vdc) (IC=150mAdc, VCE=1.0Vdc)* (IC=150mAdc, VCE=10Vdc)* DC Current Gain 2N2222 2N2222 (IC=500mAdc, VCE=10Vdc) * 2N2222A 2N2222A DIM A B C D E F G H J K L DIMENSIONS INCHES MM MIN MAX MIN MAX .209 .230 5.309 5.842 .178 .195 4.521 4.953 .170 .210 4.318 5.334 .50 .75 12.7 19.05 .100 2.54 .028 .048 7.112 1.219 -.050 -1.27 .009 .031 0.229 0.787 44° 46° 44° 46° .036 .046 0.914 1.168 .016 .021 0.406 0.533 www.cnelectr.com NOTE TYP 2N2222 2N2222,2N2222A 2N2222A Symbol Parameter Min Max Units 2N2222 2N2222 - 400 1.6 mVdc Vdc 2N2222A 2N2222A - 300 1.0 mVdc Vdc 2N2222 2N2222 - 1.3 2.6 Vdc Vdc 2N2222A 2N2222A 0.6 - 1.2 2.0 Vdc Vdc - 8.0 pF 2N2222 2N2222 2N2222A 2N2222A 250 300 - MHz MHz 2N2222A 2N2222A - 4.0 dB - 10 25 ns ns - 200 ns - 60 ns ON CHARACTERISTICS* VCE(sat) VCE(sat) VBE(sat) VBE(sat) Collector-Emitter Saturation Voltage8 (IC=150mAdc, IB=15mAdc) (IC=500mAdc, IB=50mAdc) Collector-Emitter Saturation Voltage* (IC=150mAdc, IB=15mAdc) (IC=500mAdc, IB=50mAdc) Base-Emitter Saturation Voltage * (IC=150mAdc, IB=15mAdc) (IC=500mAdc, IB=50mAdc) Base-Emitter Saturation Voltage* (IC=150mAdc, IB=15mAdc) (IC=500mAdc, IB=50mAdc) SMALL-SIGNAL CHARACTERISTICS COB fT NF Output Capacitance (VCB=10Vdc,IE=ie=0, f=1.0MHz) TransitionFrequency (VCE=20Vdc,IC=20mAdc, f=100MHz) Noise Figure (VCE=5.0Vdc,IC=200uAdc, Rs=2.0KOHM,f=1.0kHz,B=200Hz) SWITCHING CHARACTERISTICS Td tr Delay Time Rise Time ts Storage Time tf Fall Time ICON=150mAdc, IBON=15mAdc, IB(off)=15mAdc * Pulse Test: tp300us, Duty Cycle2.0% www.cnelectr.com