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2N2222A Atmel Corporation 2N2222A visit Digikey Buy
2N2222AUA Microsemi Corporation Small Signal Bipolar Transistor, 0.8A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, CERAMIC PACKAGE-4 visit Digikey Buy
2N2222AUB TT Electronics OPTEK Technology Small Signal Bipolar Transistor, 0.8A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon visit Digikey Buy
2N2222A Central Semiconductor Corp Small Signal Bipolar Transistor, 0.8A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, TO-18, TO-18, 3 PIN visit Digikey Buy
2N2222AUA TT Electronics OPTEK Technology Small Signal Bipolar Transistor, 0.8A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon visit Digikey Buy
2N2222AL Microsemi Corporation Small Signal Bipolar Transistor, 0.8A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, TO-206AA, SIMILAR TO TO-18, 3 PIN visit Digikey Buy

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2N2222A Datasheet

Part Manufacturer Description PDF Type
2N2222A Boca Semiconductor NPN SILICON PLANAR SWITCHING TRANSISTORS - Pol=NPN / Pkg=TO18 / Vceo=40 / Ic=0.8 / Hfe=100-300 / fT(Hz)=250M / Pwr(W)=0.5 Original
2N2222A Continental Device India (2n2221A) NPN Silicon Planar Switching Transistor - Pol=NPN / Pkg=TO18 / Vceo=40 / Ic=0.8 / Hfe=100-300 / fT(Hz)=250M / Pwr(W)=0.5 Original
2N2222A Micro Commercial Components NPN Medium Power Bipolar Transistor; Package: TO-18; Collector Emitter Voltage, V<sub>CEO</sub>: 40V; Continuous Collector Current: I<sub>C</sub>: 800mA; Collector Emitter Saturation Voltage, V<sub>CE(sat)</sub>: 0.3V; DC Current Gain Min (hfe): 75 Original
2N2222A Micro Commercial Components TRANS GP BJT NPN 40V 0.8A 3TO-18 - Pol=NPN / Pkg=TO18 / Vceo=40 / Ic=0.8 / Hfe=100-300 / fT(Hz)=250M / Pwr(W)=0.5 Original
2N2222A Microsemi SWITCHING TRANSISTOR NPN SILICON - Pol=NPN / Pkg=TO18 / Vceo=40 / Ic=0.8 / Hfe=100-300 / fT(Hz)=250M / Pwr(W)=0.5 Original
2N2222A Microsemi NPN Silicon Switching Transistor Original
2N2222A Multicomp High Speed Switching Transistor Original
2N2222A New England Semiconductor General Purpose Bipolar Transistor, NPN, 50V, TO-18, 3-Pin - Pol=NPN / Pkg=TO18 / Vceo=40 / Ic=0.8 / Hfe=100-300 / fT(Hz)=250M / Pwr(W)=0.5 Original
2N2222A On Semiconductor Bipolar Transistor, General Purpose Transistors NPN Silicon, TO-18 - Pol=NPN / Pkg=TO18 / Vceo=40 / Ic=0.8 / Hfe=100-300 / fT(Hz)=250M / Pwr(W)=0.5 Original
2N2222A Philips Semiconductors Small-signal Transistors Original
2N2222A Philips Semiconductors NPN switching transistors - Pol=NPN / Pkg=TO18 / Vceo=40 / Ic=0.8 / Hfe=100-300 / fT(Hz)=250M / Pwr(W)=0.5 Original
2N2222A Philips Semiconductors Silicon Planar Epitaxial Transistor Original
2N2222A Semelab Silicon NPN Transistor Original
2N2222A Semico Chip: 6.0V geometry 0400 polarity NPN - Pol=NPN / Pkg=TO18 / Vceo=40 / Ic=0.8 / Hfe=100-300 / fT(Hz)=250M / Pwr(W)=0.5 Original
2N2222A Semico Type 2N2222A Geometry 0400 Polarity NPN - Pol=NPN / Pkg=TO18 / Vceo=40 / Ic=0.8 / Hfe=100-300 / fT(Hz)=250M / Pwr(W)=0.5 Original
2N2222A Semico Chip: geometry 0400 polarity NPN - Pol=NPN / Pkg=TO18 / Vceo=40 / Ic=0.8 / Hfe=100-300 / fT(Hz)=250M / Pwr(W)=0.5 Original
2N2222A Siemens Cross Reference Guide 1998 Original
2N2222A STMicroelectronics HIGH SPEED SWITCHES - Pol=NPN / Pkg=TO18 / Vceo=40 / Ic=0.8 / Hfe=100-300 / fT(Hz)=250M / Pwr(W)=0.5 Original
2N2222A STMicroelectronics HIGH SPEED SWITCHES Original
2N2222A STMicroelectronics HIGH SPEED SWITCHES Original
Showing first 20 results.

2N2222A

Catalog Datasheet MFG & Type PDF Document Tags

2N2222

Abstract: 2n2222a NPN 2N2222 ­ 2N2222A PNP 2N2907 ­ 2N2907A SILICON PLANAR EPITAXIAL TRANSISTORS The 2N2222 and 2N2222A are NPN transistors mounted in TO-18 metal package with the collector connected to the case . , Value 2N2222A 2N2222 2N2222A 2N2222 2N2222A 2N2222 2N2222A 2N2222 2N2222A 2N2222 2N2222A 2N2222 2N2222A 2N2222 2N2222A 2N2222 Unit 40(1) 30 75 60 6 5 V V V 800 mA , air RthJ-c Thermal Resistance, Junction to case COMSET SEMICONDUCTORS Value 2N2222A
Comset Semiconductors
Original
2N2222 npn small signal current gain Transistor 2N2222A 2N2222 pnp transistor 2N2222 2N2222 capacitance tr 2n2222 100MH

2n2222 h parameter values

Abstract: 2n2222 base 2N2222; 2N2222A DESCRIPTION collector, connected to case QUICK REFERENCE DATA SYMBOL VCBO PARAMETER collector-base voltage 2N2222 2N2222A VcEO collector-emitter voltage 2N2222 2N2222A !c , 2N2222 2N2222A turn-off time = 150 mA; = 15 mA; = -1 5 mA 75 hpE ft MHz MHz ns toff l Bon , SYMBOL VcBO PARAMETER collector-base voltage 2N2222 2N2222A VCEO collector-emitter voltage 2N2222 2N2222A v ebo 2N2222; 2N2222A CONDITIONS open emitter - MIN. MAX. UNIT 60 75 30 40 5 6
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OCR Scan
2n2222 h parameter values 2N2222 NPN Transistor features 2n2222 ti 2n2222 transistor pin b c e transistor 2N2222 PHILIPS 2N2222 circuit

2n2222

Abstract: 2N2222A MAXIMUM RATINGS Rating Symbol 2N2221 2N2222 2N2221A 2N2222A Unit Collector-Emitter Voltage , Operating and Storage Junction Temperature Range tJ- Tslg -65 to +200 UC 2N2221 2N2221A* 2N2222 2N2222A , CHARACTERISTICS Collector-Emitter Breakdown Voltage Ic = 10 mAdc, IB= 0 2N2221, 2N2222 2N2221A, 2N2222A V(BR)CEO 30 40 Vdc Collector-Base Breakdown Voltage Ic = 10 nAdc, IE= 0 2N2221, 2N2222 2N2221A, 2N2222A V(BR)CBO 60 75 Vdc Emitter-Base Breakdown Voltage IE = 10 nAdc, lc= 0 2N2221, 2N2222 2N2221A, 2N2222A V
-
OCR Scan
2N2222A JANTX 2N2222A JANTXV BR 2N2222A NPN 2n2222 2n2222A 2N2222A JAN 2n2222 jan

2N2222A

Abstract: J 2N2222A 2N2221A, 2N2222A NPN Silicon Epitaxial Planar Transistors with high cutoff frequency, for high , +200 °C 74 2N2221A, 2N2222A Characteristics at Tj = 25 °C Symbol Min. Typ. Max. Unit DC Current Gain atVcE = 10 V, lc = 0.1 mA 2N2221A hFE 20 - - - 2N2222A hFE 35 - - - atVcE = 10 V, lc = 1 mA 2N2221A hFE 25 - - - 2N2222A hFE 50 - - - atVcE = 10 V, lc =10 mA 2N2221A hFE 35 - - - 2N2222A hFE 75 - - - atVcE = 10 V, lc =150 mA 2N2221A hFE 40 - 120 - 2N2222A hFE 100 - 300 - atVcE =
-
OCR Scan
J 2N2222A 2N2222A npn transistor 2N2221A-2N2222A 2N222 2n2222a transistor Metal 2n2222a

2N2222A TO-92

Abstract: 2N2222A plastic ST 2N2222 / 2N2222A NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier , . 0.19g Absolute Maximum Ratings (Ta = 25 OC) Value Symbol Unit ST 2N2222 ST 2N2222A , ST 2N2222 / 2N2222A Characteristics at Tamb=25 OC Symbol Min. Typ. Max. Unit at IC , 2N2222 hFE 30 - - - ST 2N2222A hFE 40 - - - at VCB=50V ST 2N2222 ICBO - - 0.01 µA at VCB=60V ST 2N2222A ICBO - - 0.01 µA ST 2N2222
Semtech Electronics
Original
2N2222A TO-92 2N2222A plastic 2N2222A plastic package st 2n2222a ST 2n2222 datasheet ST 2n2222

2N2222, 2N2222A

Abstract: 2n2222 !"# 2N2222 2N2222A Features · · High current (max.800mA) Low voltage (max.40V) NPN Switching Transistors Rating 2N2222 2N2222A 30 40 60 75 5.0 6.0 800 800 200 -55 to +150 -55 to +150 Max 500 1.2 146 350 , Collector-Base Voltage 2N2222 2N2222A V VEBO Emitter-Base Voltage 2N2222 2N2222A V mA mA mA O C O C Unit mW , Collector cut-off current 2N2222 (VCB=50Vdc, IE=0) (VCB=50Vdc, IE=0,TA=150) (VCB=60Vdc, IE=0) 2N2222A (VCB , 2N2222 (IC=500mAdc, VCE=10Vdc) * 2N2222A Thermal Characteristics Electrical Characteristics @ 25OC
Micro Commercial Components
Original
2N2222, 2N2222A J 2N2222 ic 4521

2N2222

Abstract: 2n2222a SEMICONDUCTOR I te c h n ic a l d a ta 2N2222. 2N2222A NPN Silicon Small-Signal Transistors , 2N2222A 50 75 6.0 Rating Collector Emitter Voltage Collector-Base Voltage Emitter-Base Voltage , = 10 ^Adc) 2N2221, 2N2222 2N2221 A, 2N2222A v (BR)EBO 2N2221, 2N2222 2N2221 A, 2N2222A >CES 2N2221, 2N2222 2N2221 A, 2N2222A 10 10 50 60 jiAdc v (BR)CEO 2N2221. 2N2222 2N2221 A, 2N2222A V(BR)CBO 60 75 30 , ) ON CHARACTERISTICS DC Current Gain (Iq = 0.1 mAdc. Vq e = 10 Vdc) 2N2221 2N2222 2N2221A 2N2222A (*C =
-
OCR Scan
2N2221-2N2222 2N2222 base capacitance 2N2222A st 2n2222 t

2n2222

Abstract: 2N2222A MCC 2N2222 2N2222A omponents 20736 Marilla Street Chatsworth !"# $ % !"# , Ratings Symbol VCEO 30 40 V 60 75 V 2N2222 2N2222A IC ICM IBM TJ TSTG Unit 2N2222 2N2222A VEBO Rating 2N2222 2N2222A VCBO Rating Collector-Emitter Voltage 5.0 6.0 , =50Vdc, IE=0,TA=150) (VCB=60Vdc, IE=0) 2N2222A (VCB=60Vdc, IE=0,TA=150) Emitter Cut-off current (IC , =10Vdc) * 2N2222A DIM A B C D E F G H J K L DIMENSIONS INCHES MM MIN MAX MIN MAX .209 .230
Micro Commercial Components
Original
ns 2n2222a npn 2n2222 V2N2222 2N2222 datasheet 10-25ns 10VDC

2n2222

Abstract: 2N2222A 2N2222 2N2222A Shanghai Lunsure Electronic Technology Co.,Ltd Tel:0086-21-37185008 Fax , Maximum Ratings Symbol VCEO 30 40 V 60 75 V 2N2222 2N2222A IC ICM IBM TJ TSTG Unit 2N2222 2N2222A VEBO Rating 2N2222 2N2222A VCBO Rating Collector-Emitter Voltage , =0) (VCB=50Vdc, IE=0,TA=150) (VCB=60Vdc, IE=0) 2N2222A (VCB=60Vdc, IE=0,TA=150) Emitter Cut-off current , =10Vdc) * 2N2222A DIM A B C D E F G H J K L DIMENSIONS INCHES MM MIN MAX MIN MAX .209 .230
Shanghai Lunsure Electronic
Original
2n2222 equivalent 2N2222 application note 2N2222 application notes 2n2222 data sheet 2N2222A TO-18 2n2222 npn

2N2222A JANTX

Abstract: 2N2222A Adc 120101 Page 1 of 2 2N2221A, 2N2221AUA, 2N2221AUB, 2N2222A, 2N2222AUA, 2N2222AUB JAN SERIES , 2N2221AL 2N2221AUA 2N2221AUB Qualified Level JAN JANTX JANTXV JANS JANHC 2N2222A 2N2222AL 2N2222AUA 2N2222AUB MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage , ) 2N2221AUA; 2N2222AUA (2) 2N2221AUB; 2N2222AUB (1) Operating & Storage Junction Temperature Range Symbol , 2N2221AUA; 2N2222AUA 2N2221AUB; 2N2222AUB 1) Derate linearly 3.08 mW/0C above TA > +37.50C 2) Derate
Microsemi
Original
for JANTXV 2N2222A transistor ub t 2N2221A JANTX NPN transistor 2n2221a NPN transistor 2n2222A 2N2222AUB JANS MIL-PRF-19500/255

2N2222A

Abstract: 2N2221A 2N2222A 2N2222AL 2N2222AUA 2N2222AUB 2N2222AUBC JANSM ­ 3K Rads (Si) JANSD ­ 10K Rads (Si) JANSP ­ 30K , Total Power Dissipation @ TA = +25°C 2N2221A, L 2N2221AUA 2N2221AUB, UBC 2N2222A, L 2N2222AUA 2N2222AUB , 2N2221A, L 2N2221AUA 2N2221AUB, UBC 1. 2. 2N2222A, L 2N2222AUA 2N2222AUB, UBC RJA 325 210 325 °C/W Symbol , linearly 4.76 mW/°C above TA > +63.5°C 3 PIN 2N2221AUB, 2N2222AUB 2N2221AUBC, 2N2222AUBC (UBC = Ceramic , TO-18 (TO-206AA) 2N2221A, 2N2222A Operating & Storage Junction Temperature Range Top, Tstg
Microsemi
Original
T4-LDS-0042

2n2222

Abstract: 2N2222A plastic package ST 2N2222 / 2N2222A NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier , . 0.19g Absolute Maximum Ratings (Ta = 25 OC) Value Symbol Unit ST 2N2222 ST 2N2222A , : 05/10/2005 ST 2N2222 / 2N2222A Characteristics at Tamb=25 OC Symbol Min. Typ. Max , 300 - ST 2N2222 hFE 30 - - - ST 2N2222A hFE 40 - - - at VCB=50V ST 2N2222 ICBO - - 0.01 µA at VCB=60V ST 2N2222A ICBO - - 0.01 µA
Semtech Electronics
Original
2n2222 TRANSISTOR Transistor 2N2222 Datasheet NPN transistor 2n2222A plastic package 2N2222 hfe 2n2222 npn transistor Datasheet 2N2222 transistor

tl 2n2222

Abstract: 2N2222 N AUER PHILIPS/DISCRETE blE D â  bbS3T31 GG2flGflb 12D I 2N2222 2N2222A IAPX SILICON PLANAR , ./u.h.f. amplifiers. QUICK REFERENCE DATA 2N2222 2N2222A Collector-base voltage (open emitter) vCBO , /DISCRETE blE ]> m ^53^31 DDEflDA? flb7 «APX 2N2222 2N2222A j V RATINGS Limiting values in accordance with the Absolute Maximum System (IEC 134) 2N2222 2N2222A , Collector cut-off current 2N2222 2N2222A lE = 0; VCB = 50 V 'CBO < 10 - nA lE = 0; VCB = 50V;Tamb
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OCR Scan
1N916 tl 2n2222 output impedance of 2N2222 Metal 2n2222 2n2222 test circuit 2N2222 TO-18 2N2222AJ S3T31 11BIVI

2N2222A motorola

Abstract: equivalent transistor 2N2222 f MAXIMUM RATINGS , 2N2222.A Unit Thermal Resistance, Junction to Ambient RÃJA 219 437.5 °c/w Thermal Resistance , TRANSISTORS NPN SILICON *2N2219A and 2N2222A are Motorola designated preferred devices. ELECTRICAL , , 2N2222,A 20 50 _ (lC = 500 mAdc, VC£ = 10Vdc)(1) 2N2219, 2N2222 2N2218A 2N2219A, 2N2222A 30 25 40 â , '" Bandwidth Product(2) (lC = 20 mAdc, Vqe = 20 Vdc, f = 100 MHz) All Types, Except 2N2219A, 2N2222A fT 250 300
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OCR Scan
2N2222A motorola equivalent transistor 2N2222 s parameters of 2N2222 equivalent of 2n2222 motorola 2N2219 2n2219 equivalent 2N2218

2N2222A TO-92

Abstract: 2N2222 - to-92 2N2222 / 2N2222A NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier , . 0.19g Absolute Maximum Ratings (Ta = 25 OC) Symbol Unit Value ST 2N2222 ST 2N2222A , to +150 O G S P FORM A IS AVAILABLE C C 2N2222 / 2N2222A Characteristics at Tamb=25 OC , hFE 30 - - - 2N2222A hFE 40 - - - Collector Cutoff Current ST 2N2222 at VCB=50V ST ICBO - - 0.01 µA at VCB=60V 2N2222A ICBO - -
Bytes
Original
2N2222 - to-92 transistor 2n2222a to-92 2N2222 NPN Transistor to 92 2n2222a to 92 npn transistor to 92 2n2222 2n2222a to92

J 2N2222A

Abstract: 2N2222, 2N2222A !"# 2N2222 2N2222A Features · · High current (max.800mA) Low voltage (max.40V) NPN Switching Transistors Rating 2N2222 2N2222A 30 40 60 75 5.0 6.0 800 800 200 -55 to +150 -55 to +150 Max 500 1.2 146 350 , Collector-Base Voltage 2N2222 2N2222A V VEBO Emitter-Base Voltage 2N2222 2N2222A V mA mA mA O C O C Unit mW , Collector cut-off current 2N2222 (VCB=50Vdc, IE=0) (VCB=50Vdc, IE=0,TA=150) 2N2222A (VCB=60Vdc, IE=0) (VCB , 2N2222 (IC=500mAdc, VCE=10Vdc) * 2N2222A Thermal Characteristics Electrical Characteristics @ 25OC
Micro Commercial Components
Original
of 2N2222A

2N2222 application note

Abstract: J 2N2222A !"# 2N2222 2N2222A Features · · High current (max.800mA) Low voltage (max.40V) NPN Switching Transistors Rating 2N2222 2N2222A 30 40 60 75 5.0 6.0 800 800 200 -55 to +150 -55 to +150 Max 500 1.2 146 350 , Collector-Base Voltage 2N2222 2N2222A V VEBO Emitter-Base Voltage 2N2222 2N2222A V mA mA mA O C O C Unit mW , Collector cut-off current 2N2222 (VCB=50Vdc, IE=0) (VCB=50Vdc, IE=0,TA=150) (VCB=60Vdc, IE=0) 2N2222A (VCB , 2N2222 (IC=500mAdc, VCE=10Vdc) * 2N2222A Thermal Characteristics Electrical Characteristics @ 25OC
Micro Commercial Components
Original

2N2222A TO-18

Abstract: 2N2222A 2N2219A 2N2222A HIGH SPEED SWITCHES DESCRIPTION The 2N2219A and 2N2222A are silicon planar epitaxial NPN transistors in Jedec TO-39 (for 2N2219A) and in Jedec TO-18 (for 2N2222A) metal case. They , voltage. 2N2219A approved to CECC 50002-100, 2N2222A approved to CECC 50002-101 available on request , amb 25 C for 2N2219A for 2N2222A at T case 25 o C for 2N2219A for 2N2222A St orage Temperature , 2N2219A/2N2222A THERMAL DATA T O-39 R t hj-ca se R t hj- amb Thermal Resistance Junction-Case
STMicroelectronics
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2N2222A Schematic symbol Transistor 2N2219A 2N2222A THOMSON COMPONENTS 2N2219A/2N2222A P008B

2N2222A

Abstract: all ic data , JTX, JTXV, JANS 2N2222A, AL JAN, JTX, JTXV, JANS 2N2222AUA JAN, JTX, JTXV, JANS 2N2222AUB JAN, JTX , , 2N2222A, AL Unit PT Top, Tstg 4 PIN 2N2221AUA, 2N2222AUA THERMAL CHARACTERISTICS , C/W C/W 0 3 PIN 2N2221AUB, 2N2222AUB ELECTRICAL CHARACTERISTICS (TA = +250C unless , , UA, UB, 2N2222A, L, UA, UB JAN SERIES ELECTRICAL CHARACTERISTICS (con't) Characteristics , 2N2222A, L, UA, UB 2N2221A, L, UA, UB 2N2222A, L, UA, UB 2N2221A, L, UA, UB 2N2222A, L, UA, UB
New England Semiconductor
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all ic data 2N2222A JANS 2N2221AU

2N2222 application notes

Abstract: 2N2222 application note MCC TM Micro Commercial Components 2N2222 2N2222A omponents 20736 Marilla Street , 2N2222A IC ICM IBM TJ TSTG Unit 2N2222 2N2222A VEBO Rating 2N2222 2N2222A VCBO , cut-off current 2N2222 (VCB=50Vdc, IE=0) (VCB=50Vdc, IE=0,TA=150) 2N2222A (VCB=60Vdc, IE=0) (VCB , =10Vdc)* DC Current Gain 2N2222 (IC=500mAdc, VCE=10Vdc) * 2N2222A Notes:1.High Temperature Solder , Revision: A 1 of 3 2011/01/01 MCC 2N2222,2N2222A TM Micro Commercial Components
Micro Commercial Components
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2222A

Abstract: 2221A f MAXIMUM RATINGS , 2N2222.A Unit Thermal Resistance, Junction to Ambient RÃJA 219 437.5 °c/w Thermal Resistance , TRANSISTORS NPN SILICON *2N2219A and 2N2222A are Motorola designated preferred devices. ELECTRICAL , , 2N2222,A 20 50 _ (lC = 500 mAdc, VC£ = 10Vdc)(1) 2N2219, 2N2222 2N2218A 2N2219A, 2N2222A 30 25 40 â , '" Bandwidth Product(2) (lC = 20 mAdc, Vqe = 20 Vdc, f = 100 MHz) All Types, Except 2N2219A, 2N2222A fT 250 300
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OCR Scan
2222A 2221A 2n h 2222a 2219a 2222a NPN 2222A transistors 2N-2219A

2n2222

Abstract: A2222 base 2N2222; 2N2222A DESCRIPTION collector, connected to case QUICK REFERENCE DATA SYMBOL VCBO PARAMETER collector-base voltage 2N2222 2N2222A VcEO collector-emitter voltage 2N2222 2N2222A !c , 2N2222 2N2222A turn-off time = 150 mA; = 15 mA; = -1 5 mA 75 hpE ft MHz MHz ns toff l Bon , SYMBOL VcBO PARAMETER collector-base voltage 2N2222 2N2222A VCEO collector-emitter voltage 2N2222 2N2222A v ebo 2N2222; 2N2222A CONDITIONS open emitter - MIN. MAX. UNIT 60 75 30 40 5 6
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OCR Scan
2221-2N A2222 2222 kn a npn 2222 2N 2222 amd 2907

2N2222A motorola

Abstract: 2n2222 motorola 2N2221AL 2N2221AUA 2N2221AUB Qualified Level JAN JANTX JANTXV JANS JANHC 2N2222A 2N2222AL , Emitter-Base Voltage Collector Current Total Power Dissipation @ TA = +250C 2N2221A, L; 2N2222A, L (1 , 0.50 -65 to +200 W PT Top, Tstg TO-18* (TO-206AA) 2N2221A, 2N2222A 0 C 4 PIN* THERMAL CHARACTERISTICS Characteristics Thermal Resistance, Junction-to-Ambient 2N2221A, L; 2N2222A, L , Adc 120101 Page 1 of 2 2N2221A, 2N2221AUA, 2N2221AUB, 2N2222A, 2N2222AUA, 2N2222AUB JAN SERIES
Motorola
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2n2222 motorola 2N2219A MOTOROLA 2N2219 MOTOROLA motorola 2n2222 motorola 2N2219A motorola 2N2222A 2N2219/D 205AD 206AA

2N2222

Abstract: s parameters of 2N2222 2N2222 2N2222A Shanghai Lunsure Electronic Technology Co.,Ltd Tel:0086-21-37185008 Fax , Maximum Ratings Symbol VCEO 30 40 V 60 75 V 2N2222 2N2222A IC ICM IBM TJ TSTG Unit 2N2222 2N2222A VEBO Rating 2N2222 2N2222A VCBO Rating Collector-Emitter Voltage , =0) (VCB=50Vdc, IE=0,TA=150) (VCB=60Vdc, IE=0) 2N2222A (VCB=60Vdc, IE=0,TA=150) Emitter Cut-off current , =10Vdc) * 2N2222A DIM A B C D E F G H J K L DIMENSIONS INCHES MM MIN MAX MIN MAX .209 .230
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OCR Scan
2N2222 z parameters 2N2219A equivalent

2N2222A 331

Abstract: 2n2222 h 331 transistors 2N2221A, 2N2222A NPN Silicon Epitaxial Planar Transistors with high cutoff frequency, for high , +200 °C 74 2N2221A, 2N2222A Characteristics at Tj = 25 °C Symbol Min. Typ. Max. Unit DC Current Gain atVcE = 10 V, lc = 0.1 mA 2N2221A hFE 20 - - - 2N2222A hFE 35 - - - atVcE = 10 V, lc = 1 mA 2N2221A hFE 25 - - - 2N2222A hFE 50 - - - atVcE = 10 V, lc =10 mA 2N2221A hFE 35 - - - 2N2222A hFE 75 - - - atVcE = 10 V, lc =150 mA 2N2221A hFE 40 - 120 - 2N2222A hFE 100 - 300 - atVcE =
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OCR Scan
2N2222A 331 2n2222 h 331 transistors 2n2222 -331 2n2222 331 transistors 2n2222 a 331 2n2222 - 331 7Z69420 7Z85736

2N2222A 331

Abstract: 2n2222 -331 2N2219A 2N2222A ® HIGH SPEED SWITCHES PRELIMINARY DATA DESCRIPTION The 2N2219A and 2N2222A are silicon Planar Epitaxial NPN transistors in Jedec TO-39 (for 2N2219A) and in Jedec TO-18 (for 2N2222A) metal case. They are designed for high speed switching application at collector current , Collector Peak Current (t p < 5 ms) Total Dissipation at T amb ≤ 25 o C for 2N2219A for 2N2222A at T C ≤ 25 o C for 2N2219A for 2N2222A Storage Temperature Max. Operating Junction Temperature
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2N5581 2n2222 -331 transistors 2n2222 h 331 2n2222 331 MOTOROLA 2n2218 TRANSISTOR 2n2222 -331 transistor 2N2222A JAN Motorola 2N5581/82 2N55S2 2N5582 2N5581/2N5582 ITO-206AB

2N2222A

Abstract: DISCRETE SEMICONDUCTORS DATA SHEET M3D125 2N2222; 2N2222A NPN switching transistors , ; 2N2222A FEATURES PINNING · High current (max. 800 mA) PIN · Low voltage (max. 40 V). , . MAX. UNIT open emitter - 60 V - 75 V 2N2222 - 30 V 2N2222A - , MHz - 250 ns 2N2222 2N2222A VCEO collector-emitter voltage open base IC , V fT transition frequency IC = 20 mA; VCE = 20 V; f = 100 MHz 2N2222 2N2222A toff
STMicroelectronics
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