2N2221A 2N2222A - Datasheet Archive

 

2N2221A 2N2222A NPN SILICON TRANSISTOR JEDEC TO-18 CASE DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N2221A, 2N2222A types are Silicon

 

DATA SHEET 2N2221A 2N2221A 2N2222A 2N2222A NPN SILICON TRANSISTOR JEDEC TO-18 CASE DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N2221A 2N2221A, 2N2222A 2N2222A types are Silicon NPN Planar Epitaxial Transistors designed for small signal general purpose and switching applications. MAXIMUM RATINGS: (TA=25°C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation Power Dissipation (TC=25°C) Operating and Storage Junction Temperature Thermal Resistance Thermal Resistance SYMBOL VCBO VCEO VEBO IC PD PD 75 40 6.0 800 400 1.2 TJ,Tstg -65 to +200 JA UNITS V V V mA mW W °C 438 °C/W 146 JC °C/W ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) 2N2221A 2N2221A SYMBOL TEST CONDITIONS MIN MAX ICBO VCB=60V 10 ICBO VCB=60V, TA=150°C 10 IEBO VEB=3.0V 10 ICEV VCE=60V, VEB=3.0V 10 2N2222A 2N2222A MIN MAX 10 10 10 10 UNITS nA µA nA nA BVCBO BVCEO IC=10µA IC=10mA 75 40 75 40 V V BVEBO VCE(SAT) VCE(SAT) VBE(SAT) VBE(SAT) hFE hFE hFE hFE hFE hFE hFE IE=10µA IC=150mA, IB=15mA IC=500mA, IB=50mA IC=150mA, IB=15mA IC=500mA, IB=50mA VCE=10V, IC=0.1mA VCE=10V, IC=1.0mA VCE=10V, IC=10mA VCE=10V, IC=10mA, TA=-55°C VCE=10V, IC=150mA VCE=1.0V, IC=150mA VCE=10V, IC=500mA 6.0 6.0 V V V V V 0.6 20 25 35 15 40 20 25 0.3 1.0 1.2 2.0 120 0.6 35 50 75 35 100 50 40 0.3 1.0 1.2 2.0 300 (Continued) R2 2N2221A 2N2221A / 2N2222A 2N2222A NPN SILICON TRANSISTOR ELECTRICAL CHARACTERISTICS: Continued SYMBOL fT Cob Cib hie hie hre hre hfe hfe hoe TEST CONDITIONS VCE=20V, IC=20mA, f=100MHz VCB=10V, IE=0, f=100kHz VEB=0.5V, IC=0, f=100kHz VCE=10V, IC=1.0mA, f=1.0kHz VCE=10V, IC=10mA, f=1.0kHz VCE=10V, IC=1.0mA, f=1.0kHz VCE=10V, IC=10mA, f=1.0kHz VCE=10V, IC=1.0mA, f=1.0kHz VCE=10V, IC=10mA, f=1.0kHz hoe rb'Cc VCE=10V, IC=1.0mA, f=1.0kHz VCE=10V, IC=10mA, f=1.0kHz VCB=10V, IE=20mA, f=31.8MHz NF td tr ts tf VCE=10V, IC=100µA, RS=1.0k, f=1.0kHz VCC=30V, VBE=0.5, IC=150mA, IB1=15mA VCC=30V, VBE=0.5, IC=150mA, IB1=15mA VCC=30V, IC=150mA, IB1=IB2=15mA VCC=30V, IC=150mA, IB1=IB2=15mA 2N2221A 2N2221A MIN MAX 250 8.0 25 2N2222A 2N2222A MIN MAX 300 8.0 25 UNITS MHz pF pF 1.0 3.5 2.0 8.0 k 0.2 1.0 0.25 1.25 k x10-4 5.0 8.0 50 75 4.0 300 375 x10-4 30 50 2.5 150 300 3.0 15 5.0 35 µmhos 10 100 150 25 200 150 µmhos ps 4.0 10 25 225 60 dB ns ns ns ns 10 25 225 60 TO-18 PACKAGE - MECHANICAL OUTLINE A B SYMBOL A (DIA) B (DIA) C D E F (DIA) G (DIA) H I J D C E F LEAD #2 LEAD #1 I 45° G H LEAD #3 LEAD CODE: J R1 DIMENSIONS INCHES MILLIMETERS MIN MAX MIN MAX 0.209 0.230 5.31 5.84 0.178 0.195 4.52 4.95 0.030 0.76 0.170 0.210 4.32 5.33 0.500 12.70 0.016 0.019 0.41 0.48 0.100 2.54 0.050 1.27 0.036 0.046 0.91 1.17 0.028 0.048 0.71 1.22 TO-18 (REV: R1) 1) Emitter 2) Base 3) Collector