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| Part Number | Manufacturer | Description | |||||
| 1. |  2N2219 |
Motorola, Inc. / Freescale Semiconductor | General Purpose Transistors NPN Silicon - Pol=NPN / Pkg=TO39 / Vceo=30 / Ic=0.8 / Hfe=100-300 / fT(Hz)=250M / Pwr(W)=0.8 | 382.98 Kb | 5 Pg. | ||
| 2. | 2N2219 |
ST Microelectronics | HIGH-SPEED SWITCHES - Pol=NPN / Pkg=TO39 / Vceo=30 / Ic=0.8 / Hfe=100-300 / fT(Hz)=250M / Pwr(W)=0.8 | 70.45 Kb | 5 Pg. | ||
| 3. | 2N2219 |
ST Microelectronics | Shortform Data Book 1988 | 38.25 Kb | 1 Pg. | ||
| 4. | 2N2219 |
Raytheon Company | Selection Guide 1977 | 100.89 Kb | 2 Pg. | ||
| 5. | 2N2219 |
Continental Device India Limited | Silicon Planar Switching Transistor | 338.7 Kb | 2 Pg. | ||
| 6. | 2N2219 |
Ferranti Semiconductors | Quick Reference Guide 1985 | 98.08 Kb | 3 Pg. | ||
| 7. | 2N2219 |
Thomson-CSF | Shortform Semiconductor Catalogue 1982 | 179.17 Kb | 2 Pg. | ||
| 8. | 2N2219 |
Motorola, Inc. | European Master Selection Guide 1986 | 64.89 Kb | 2 Pg. | ||
| 9. | 2N2219 |
Crimson Semiconductor | Transistor Selection Guide | 1453.37 Kb | 36 Pg. | ||
| 10. | 2N2219 |
Siemens Semiconductors | NPN Silicon Planar Transistors - Pol=NPN / Pkg=TO39 / Vceo=30 / Ic=0.8 / Hfe=100-300 / fT(Hz)=250M / Pwr(W)=0.8 | 155.89 Kb | 6 Pg. |
| « Previous 1 2 3 4 5 6 7 8 9 10 Next » |
| 1. |  57.06 Kb • 2 Pages |
Abstract: ... 2N2219 2N2219A 2N2219AL. JAN JANTX JANTXV JANS. MAXIMUM RATINGS. Ratings Symbol. 2N2218 2N2219 2N2218A; L 2N2219A; L. Unit. Collector-Emitter Voltage VCEO 30 50 Vdc. Collector-Base Voltage VCBO 60 ... Labels: 2N2219 |
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| 2. |  29.62 Kb • 2 Pages |
Abstract: ... 2N2218 2N2219 2N2218A; AL 2N2219A; AL. Unit. Collector-Emitter Voltage VCEO 30 50 Vdc. Collector-Base Voltage VCBO 60 75 Vdc. Emitter-Base Voltage VEBO 5.0 6.0 Vdc. Collector Current IC 800 mAdc. Total ... Labels: 2N2219 |
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| 3. |  27.99 Kb • 1 Pages |
Abstract: ... 2N2219, 2N2219A, 2N2222, 2N2222A. Chip type 2C2222A by Semicoa Semiconductors provides perfor-mance similar to these devices. Product Summary: Part Numbers: 2N2222A, 2N2222, 2N2219, 2N2219A ... Labels: 2N2219 |
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| 4. |  70.45 Kb • 5 Pages |
Abstract: ... 2N2218-2N2219 2N2221-2N2222. January 1989. HIGH-SPEED SWITCHES. ABSOLUTE MAXIMUM RATINGS. Symbol Parameter Value Unit. VCBO Collector-base Voltage (IE = 0) 60 V. VCEO Collector-emitter Voltage ... Labels: 2N2219 |
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| 5. |  228.86 Kb • 9 Pages |
Abstract: ... 2N2219. Features Features. • Meets MIL 19500 /251 • Collector - Base Voltage 60 V • Collector - Current 800 mA • Medium Current, BipolarTransistor. Maximum Ratings RATING SYMBOL VALUE UNIT. Collector ... Labels: 2N2219 |
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| 6. |  52.9 Kb • 8 Pages |
Abstract: ... 2N2219; 2N2219A NPN switching transistors book, halfpage M3D111 1997 Sep 03 2 Philips Semiconductors Product specification NPN switching transistors 2N2219; 2N2219A FEATURES • High ... Labels: 2N2219 |
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| 7. |  10.56 Kb • 1 Pages |
Abstract: ... 2N2219. Bipolar NPN Device. VCEO = 30V IC = 0.8A. All Semelab hermetically sealed products can be processed in accordance with the requirements of BS, CECC and JAN, JANTX, JANTXV and JANS specifications ... Labels: 2N2219 |
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| 8. |  272.49 Kb • 6 Pages |
Abstract: ... 2N2219 2N2222. 2N2219A 2N2222A Unit. Collector ‐ Emitter Voltage VCEO 30 40 Vdc. Collector ‐ Base Voltage VCBO 60 75 Vdc. Emitter ‐ Base Voltage VEBO 5.0 6.0 Vdc. Collector Current — Continuous IC 800 ... Labels: 2N2219 |
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| 9. |  194.52 Kb • 2 Pages |
Abstract: ... 2N2219 Silicon NPN Transistor. D a t a S h e e t. Description. Semicoa Semiconductors offers: • Screening and processing per MIL-PRF-19500 Appendix E. • JAN level (2N2219J) • JANTX level (2N2219JX) ... Labels: 2N2219 |
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| 10. |  4.24 Kb • 1 Pages |
Abstract: ... 2N2905 TO-39 40 600 600 100 300 200 300 2N2219 134. 2N2905A TO-39 60 600 600 100 300 200 300 2N2219A 134. 2N2906 TO-18 40 600 400 40 120 200 300 2N2222 138. 2N2906A TO-18 60 600 400 40 120 200 300 2N2222A 138 ... Labels: 2N2219 |
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