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2N2219 Microsemi Corporation Small Signal Bipolar Transistor, 0.8A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon, TO-205AD, TO-39, 3 PIN visit Digikey Buy
2N2219AL Microsemi Corporation Small Signal Bipolar Transistor, 0.8A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, TO-5, TO-5, 3 PIN visit Digikey Buy
2N2219A Central Semiconductor Corp Small Signal Bipolar Transistor, 0.8A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, TO-39, TO-39, 3 PIN visit Digikey Buy
2N2219A Microsemi Corporation Small Signal Bipolar Transistor, 0.8A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, TO-205AD, TO-39, 3 PIN visit Digikey Buy
2N2219 Central Semiconductor Corp Small Signal Bipolar Transistor, 0.8A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon, TO-39, TO-39, 3 PIN visit Digikey Buy
2N2219 LEAD FREE Central Semiconductor Corp TRANS NPN 30V 0.8A TO-39 visit Digikey Buy

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2N2219 Datasheet

Part Manufacturer Description PDF Type
2N2219 Central Semiconductor Transistors (BJT) - Single, Discrete Semiconductor Products, TRANS NPN 30V 800MA TO-39 Original
2N2219 Microsemi Transistors (BJT) - Single, Discrete Semiconductor Products, TRANS NPN 30V 800MA TO-39 Original
2N2219 Microsemi BJT, NPN, Switching Transistor, VCB0 60V, IC 0.8A - Pol=NPN / Pkg=TO39 / Vceo=30 / Ic=0.8 / Hfe=100-300 / fT(Hz)=250M / Pwr(W)=0.8 Original
2N2219 New England Semiconductor BJT, NPN, Switching Transistor, IC 0.8A - Pol=NPN / Pkg=TO39 / Vceo=30 / Ic=0.8 / Hfe=100-300 / fT(Hz)=250M / Pwr(W)=0.8 Original
2N2219 On Semiconductor 2N2219 - TRANSISTOR 30 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-5, BIP General Purpose Small Signal Original
2N2219 On Semiconductor Bipolar Transistor, General Purpose Transistors NPN Silicon - Pol=NPN / Pkg=TO39 / Vceo=30 / Ic=0.8 / Hfe=100-300 / fT(Hz)=250M / Pwr(W)=0.8 Original
2N2219 Philips Semiconductors TRANS GP BJT NPN 30V 0.8A 3TO-39 - Pol=NPN / Pkg=TO39 / Vceo=30 / Ic=0.8 / Hfe=100-300 / fT(Hz)=250M / Pwr(W)=0.8 Original
2N2219 Philips Semiconductors Silicon Planar Epitaxial Transistor Original
2N2219 Semelab Bipolar NPN Device in a Hermetically Sealed TO39 Metal Package - Pol=NPN / Pkg=TO39 / Vceo=30 / Ic=0.8 / Hfe=100-300 / fT(Hz)=250M / Pwr(W)=0.8 Original
2N2219 Semico Chip Type 2C2222A Geometry 0400 Polarity NPN - Pol=NPN / Pkg=TO39 / Vceo=30 / Ic=0.8 / Hfe=100-300 / fT(Hz)=250M / Pwr(W)=0.8 Original
2N2219 STMicroelectronics HIGH-SPEED SWITCHES - Pol=NPN / Pkg=TO39 / Vceo=30 / Ic=0.8 / Hfe=100-300 / fT(Hz)=250M / Pwr(W)=0.8 Original
2N2219 Advanced Semiconductor Silicon Transistor Selection Guide Scan
2N2219 Central Semiconductor NPN Silicon Transistor, TO-39 Scan
2N2219 Continental Device India Semiconductor Device Data Book 1996 Scan
2N2219 Continental Device India Silicon Planar Switching Transistor Scan
2N2219 Crimson Semiconductor Transistor Selection Guide Scan
2N2219 Diode Transistor SMALL SIGNAL TRANSISTORS Scan
2N2219 Dionics NPN Si Transistor Scan
2N2219 Fairchild Semiconductor NPN small signal general purpose amplifier & switch. - Pol=NPN / Pkg=TO39 / Vceo=30 / Ic=0.8 / Hfe=100-300 / fT(Hz)=250M / Pwr(W)=0.8 Scan
2N2219 Ferranti Semiconductors Shortform Data Book 1971 Scan
Showing first 20 results.

2N2219

Catalog Datasheet MFG & Type PDF Document Tags

2N2219

Abstract: 2N2218-2N2219 500 mAdc, IB = 50 mAdc 2N2218 2N2219 2N2218A, 2N2218AL 2N2219A, 2N2219AL 2N2218 2N2219 2N2218A, 2N2218AL 2N2219A, 2N2219AL 2N2218 2N2219 2N2218A, 2N2218AL 2N2219A, 2N2219AL 2N2218, A , Current Total Power Dissipation 2N2218 2N2219 2N2218A; AL 2N2219A; AL 30 60 5.0 50 75 , , 2N2218A 2N2219, 2N2219A TO- 39 (TO-205AD) THERMAL CHARACTERISTICS Characteristics Thermal , , 2N2219A, V(BR)CEO 30 50 2N2218, 2N2219 2N2218A, AL, 2N2219A, IEBO 10 10 10 µAdc Adc
New England Semiconductor
Original
2N2218-2N2219 2N2219 transistor transistor 2n2218 datasheet transistor 2n2218 Transistor 2N2219A 2n2219a npn transistor MIL-PRF-19500/251

2n2219

Abstract: 2N2219 transistor MIL-PRF-19500/251 DEVICES LEVELS 2N2218 2N2218A 2N2218AL 2N2219 2N2219A 2N2219AL * Also , , VCE = 10Vdc 2N2218 2N2219 2N2218A; 2N2218AL 2N2219A; 2N2219AL 20 35 30 50 IC = 1.0mAdc, VCE = 10Vdc 2N2218 2N2219 2N2218A; 2N2218AL 2N2219A; 2N2219AL 25 50 35 75 IC = 10mAdc, VCE = 10Vdc 2N2218 2N2219 2N2218A; 2N2218AL 2N2219A; 2N2219AL IC = 150mAdc, VCE = 10Vdc , Symbol 2N2218 2N2219 2N221A; L 2N2219A; L Unit Collector-Emitter Voltage VCEO 30
Microsemi
Original
transistor 2N2219 Transistor 2N2218a 2N2218 transistor 2N2218A-2N2219A 2N2219 JANTX JANSR2N2218 T4-LDS-0091 100MH

2N2219

Abstract: 2N2219 transistor 2N2218A 2N2218AL Qualified Level JAN JANTX JANTXV JANS 2N2219 2N2219A 2N2219AL MAXIMUM , ; 2N2218AL 2N2219A; 2N2219AL 2N2218 2N2219 2N2218A; 2N2218AL 2N2219A; 2N2219AL 2N2218 2N2219 2N2218A; 2N2218AL 2N2219A; 2N2219AL 2N2218; A; 2N2218AL 2N2219; A; 2N2219AL 2N2218; A; 2N2218AL 2N2219; A; 2N2219AL 2N2218; 2N2219 2N2218A; L; 2N2219A; L 2N2218; 2N2219 2N2218; L; 2N2219A; L 2N2218; 2N2219 , Temp. Range 2N2218 2N2219 2N2218A; L 2N2219A; L 30 60 5.0 50 75 6.0 VCEO VCBO
Microsemi
Original
transistor 2N2219 data sheet 2N2219 JANTXV N2218

2N2219

Abstract: 2N2219A mAdc, VCE = 10Vdc 2N2218 2N2219 2N2218A, 2N2218AL 2N2219A, 2N2219AL 2N2218 2N2219 2N2218A, 2N2218AL 2N2219A, 2N2219AL 2N2218 2N2219 2N2218A, 2N2218AL 2N2219A, 2N2219AL 2N2218, A, 2N2218AL 2N2219, A, 2N2219AL 2N2218, A, 2N2218AL 2N2219, A, 2N2219AL 2N2218, 2N2219 2N2218A, L, 2N2219A, L 2N2218, 2N2219 , TECHNICAL DATA 2N2218, 2N2218A JAN, JTX, JTXV 2N2218AL JAN, JTX, JTXV 2N2219, 2N2219A JAN, JTX , 2N2219A; L 50 75 6.0 800 Unit Vdc Vdc Vdc mAdc W W 0 C 2N2218, 2N2218A 2N2219, 2N2219A TO- 39 (TO
New England Semiconductor
Original

2n2219

Abstract: 2n2219 application 2N2219, 2N2219A, 2N2219AL Small Signal Switching Transistor NPN Silicon Features http , : 2N2219/D 2N2219, 2N2219A, 2N2219AL ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted , (sat) Vdc Cobo Cibo pF pF toff ns http://onsemi.com 2 2N2219, 2N2219A, 2N2219AL , . COLLECTOR http://onsemi.com 3 2N2219, 2N2219A, 2N2219AL PACKAGE DIMENSIONS TO-39 3-Lead CASE 205AB , TO-39 CASE 205AB (2N2219, 2N2219A) Stresses exceeding Maximum Ratings may damage the device
ON Semiconductor
Original
2n2219 application 205AA JAN2N2219/A JANTX2N2219/A JANTXV2N2219/A JANTX2N2219AL JANTXV2N2219AL

2n2219

Abstract: 2N2219, 2N2219A, 2N2219AL Small Signal Switching Transistor NPN Silicon http://onsemi.com , , Duty Cycle ≤ 2.0%. http://onsemi.com 2 ton toff ns ns 2N2219, 2N2219A, 2N2219AL , _BSC 0.200 BSC -0.050 0.054 BSC -0.030 0.100 - 2N2219, 2N2219A, 2N2219AL PACKAGE , , 2N2219A, 2N2219AL ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Symbol , â'Emitter Breakdown Voltage (IE = 10 mAdc) 2N2219 2N2219A/AL Emitterâ'Base Cutoff Current (VEB =
ON Semiconductor
Original
2N2219/D

2N2219

Abstract: 2N2219, 2N2219A, 2N2219AL Small Signal Switching Transistor NPN Silicon Features http , /D 2N2219, 2N2219A, 2N2219AL ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted , (sat) Vdc Cobo Cibo pF pF toff ns http://onsemi.com 2 2N2219, 2N2219A, 2N2219AL , . COLLECTOR http://onsemi.com 3 2N2219, 2N2219A, 2N2219AL PACKAGE DIMENSIONS TO-39 3-Lead CASE 205AB , TO-39 CASE 205AB (2N2219, 2N2219A) THERMAL CHARACTERISTICS Characteristic Thermal Resistance
ON Semiconductor
Original

2n2219 equivalent

Abstract: 2N2219 MIL-PRF-19500/251 DEVICES LEVELS 2N2218 2N2218A 2N2218AL 2N2219 2N2219A 2N2219AL * Also , ; 2N2219A / AL 2N2218A; 2N2219A / AL 2N2218 2N2219 2N2218A; 2N2218AL 2N2219A; 2N2219AL 2N2218 2N2219 2N2218A; 2N2218AL 2N2219A; 2N2219AL 2N2218 2N2219 2N2218A; 2N2218AL 2N2219A; 2N2219AL , Resistance, Junction-to-Case TO-39 (TO-205AD) 2N2218, 2N2218A 2N2219, 2N2219A Note: (1) Derate , ; 2N2219 2N2218A; 2N2219A / AL Emitter-Base Cutoff Current VEB = 5.0Vdc VEB = 6.0Vdc VEB = 4.0Vdc
Microsemi
Original
2n2219 equivalent equivalent transistor of 2n2219a similar 2N2219 transistor equivalent for 2N2219 2n2219 equivalent transistor 2N2219A equivalent

2n2219

Abstract: 2N221B SEMICONDUCTOR TECHNICAL DATA 2N2219« 2N2219A ' _ S ^ J Î L0NCS 2805 Vet«ra/>s Highway , 2N2218A 2N 2219A 2N 2218 2N2218A 2N2219. 2N2219A 2N 2218, 2N2218A 2N2219. 2N2219A 2N2218, 2N 2218A 2N2219. , 2N2218A. 2N2219A v {BR )C B O 2N 2218,2N 2219 2N2218A, 2N2219A v (B R )E B O 2N2218 2N2219 2N2218A. 2N 2219A `C E S 2N2218. 2N2219 2N2218A, 2N2219A 0.01 0.01 (continued] 5.0 60 60 75 30 50 Vdc Vdc Sym bol , ) Ta = 150 C ; (V c B = 50 Vdc)
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OCR Scan
2N2210 2N221B 221SA 2N2219JAN

2n2219

Abstract: 2n2219 equivalent MIL-PRF-19500/251 DEVICES LEVELS 2N2218 2N2218A 2N2218AL 2N2219 2N2219A 2N2219AL * Also , 2N2219A; 2N2219AL 2N2218 2N2219 2N2218A; 2N2218AL 2N2219A; 2N2219AL 2N2218 2N2219 2N2218A; 2N2218AL 2N2219A; 2N2219AL 2N2218; A; AL 2N2219; A; AL Min. hFE 2N2218; A; AL 2N2219; A; AL 20 35 , Thermal Resistance, Junction-to-Case TO-39 (TO-205AD) 2N2218, 2N2218A 2N2219, 2N2219A Note: (1 , ; 2N2219 2N2218A; 2N2219A / AL Emitter-Base Cutoff Current VEB = 5.0Vdc VEB = 6.0Vdc VEB = 4.0Vdc
Microsemi
Original

2N2219

Abstract: 2N2219 transistor 2N2218A 2N2218AL 2N2219 2N2219A 2N2219AL Qualified Level JAN JANTX JANTXV JANS MAXIMUM RATINGS Ratings , mAdc, VCE = 10Vdc 2N2218 2N2219 2N2218A; 2N2218AL 2N2219A; 2N2219AL 2N2218 2N2219 2N2218A; 2N2218AL 2N2219A; 2N2219AL 2N2218 2N2219 2N2218A; 2N2218AL 2N2219A; 2N2219AL 2N2218; A; 2N2218AL 2N2219; A; 2N2219AL 2N2218; A; 2N2218AL 2N2219; A; 2N2219AL 2N2218; 2N2219 2N2218A; L; 2N2219A; L 2N2218; 2N2219 , Top, Tstg 2N2218 2N2219 30 60 5.0 2N2218A; L 2N2219A; L 50 75 6.0 Unit Vdc Vdc Vdc mAdc W
Microsemi
Original
NPN transistor transistor all TO-5 PACKAGE power transistor all transistor datasheet MIL-PRF-19500 TRANSISTOR JAN2N2218L JANTXV2N2219L 2N2218L

2N2905 2N2219

Abstract: 2n2219 current (max. 800 mA) · Low voltage (max. 40 V). 2N2219; 2N2219A PINNING PIN 1 2 3 emitter base , REFERENCE DATA SYMBOL VcBO PARAMETER collector-base voltage 2N2219 2N2219A collector-emitter voltage 2N2219 2N2219A collector current (DC) total power dissipation DC current gain transition frequency 2N2219 , System (IEC 134). 2N2219; 2N2219A SYMBOL VcBO 2N2219 2N2219A V CEO PARAMETER collector-base , 2N2219 2N2219A emitter-base voltage 2N2219 2N2219A collector current (DC) peak collector current peak
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OCR Scan
2N2905 2N2219 2N2905A RS 2N2219A philips 2N2219 2N2905 UHF power TRANSISTOR PNP TO-39 2N2905 2N2905A LB826

2n2219

Abstract: 2N2219 2N2219A SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N transistors in a TO-39 metal , 2N2219 2N2219A RATINGS Lim iting values in accordance w ith the Absolute Maximum Ssystem (IEC 134) 2N2219A 2N2219 Collector-base voltage (open emitter) VCBO max. 60 75 V , _ - M 10 n 20 n 2N2219 2N2219A Silicon planar epitaxial transistor 2N2219 , 707 2N2219 2N2219A h-parameters (common emitter) IC = 1 m A ;V c E = 1 0 V ; f = 1 kHz
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OCR Scan
1N916

2n2219

Abstract: 2N2905 2N2219 application DISCRETE SEMICONDUCTORS DATA SHEET M3D111 2N2219; 2N2219A NPN switching transistors , - 75 V 2N2219 - 30 V 2N2219A VCEO - 2N2219A - 40 V - , switching transistors 2N2219; 2N2219A LIMITING VALUES In accordance with the Absolute Maximum Rating , . UNIT open emitter 2N2219 60 V 2N2219A VCEO - - 75 V collector-emitter voltage 2N2219 - 30 V 2N2219A open base; IC 500 mA - 40 V 2N2219 - 5
Philips Semiconductors
Original
2N2905 2N2219 application reference du transistor 2N2219 c2n2219 2n2219 philips 2N-2219A philips 2n2219 st MAM317 SCA55

2N2222A motorola

Abstract: equivalent transistor 2N2222 10 Vdc) 2N2218A 2N2219.A, 2N2222,A hFE 20 35 â'" 0C = 1-0 mAdc, Vce = 10 Vdc) \ 2N2218A 2N2219.A , f MAXIMUM RATINGS , , 2N2222,A 20 50 _ (lC = 500 mAdc, VC£ = 10Vdc)(1) 2N2219, 2N2222 2N2218A 2N2219A, 2N2222A 30 25 40 â , Vdc Collector Current â'" Continuous ic 800 800 mAdc 2N2218A 2N2219,A 2N2222,A Total Device , Range TJ' Tstg -65 to +200 °C THERMAL CHARACTERISTICS Characteristic Symbol 2N2218A 2N2219,A
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OCR Scan
2N2222A motorola equivalent transistor 2N2222 2n2222 equivalent s parameters of 2N2222 equivalent of 2n2222 motorola 2N2219

2N2219A

Abstract: 2n2219 DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D111 2N2219; 2N2219A NPN switching , 75 V 2N2219 - 30 V 2N2219A - 40 V - 800 mA Tamb 25 °C - 800 mW 75 - 250 - 2N2219 2N2219A VCEO collector-emitter voltage open base , transistors 2N2219; 2N2219A LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC , emitter 2N2219 60 V 2N2219A VCEO - - 75 V collector-emitter voltage 2N2219 -
Philips Semiconductors
Original
VHF power TRANSISTOR PNP TO-39 ST 2N2905 Transistor 2N2905A

Transistor Equivalent list for 2n2218

Abstract: 2n2218 application note , SWITCHING, TYPES 2N2218, 2N2218A, 2N2218AL, 2N2219, 2N2219A, AND 2N2219AL, JAN, JANTX, JANTXV, JANS, JANSM , 2N2219A 2N2218AL 2N2219AL 20 30 20 30 20 30 ton pF Min 2N2218 2N2219 2N2218A 2N2219A , Collector to base cutoff current 2N2218, 2N2219 2N2218A, 2N2219A 2N2218AL, 2N2219AL 3036 Condition , , 2N2219 2N2218A, 2N2219A 2N2218AL, 2N2219AL 3061 Breakdown voltage, collector to emitter 2N2218, 2N2219 2N2218A, 2N2219A 2N2218AL, 2N2219AL 3011 Decap internal visual (design verification) 4
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Original
Transistor Equivalent list for 2n2218 2n2218 application note 2N2219 transistor substitute 2N2219 JANTX die MIL-PRF-19500/251R MIL-PRF-19500/251P MIL-PRF-19500

2n2219

Abstract: 2N2219 Spec Sheets Details Diodes, Transistors, Thyristors, Triacs, Dio. class="hl">2N2219 HOME | CATALOG | CART |EXPRESS CHECKOUT | PARTS WATCH | NEW , Category » Transistors Buy 2N2219 at our online store! 2N2219 Availability Special Offers: FREE UPS Ground Shipping on Orders above $150.00 Lanuage Translator: 2N2219 Information Did you Know , Request a Quote Test Houses 2N2219 Specifications Military/High-Rel : N V(BR)CEO (V) : 30 V(BR)CBO (V
American Microsemiconductor
Original
STV3208 LM3909N LM3909 1N4510 2N1711
Abstract: 2N2219 2N2219A SILICON NPN TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N2219 and 2N2219A are silicon NPN transistors manufactured by the , =10V, IC=500mA - - 40 - R1 (31-July 2013) 2N2219 2N2219A SILICON NPN TRANSISTORS , . c o m 2N2219 2N2219A SILICON NPN TRANSISTORS TYPICAL ELECTRICAL CHARACTERISTICS R1 (31 , Power Dissipation Power Dissipation (TC=25°C) Operating and Storage Junction Temperature 2N2219 Central Semiconductor
Original

2N2219

Abstract: 2N2219A 2N2219 2N2219A NPN Silicon Transistor JEDEC TO-39 Case DESCRIPTION The CENTRAL SEMICONDUCTOR 2N2218,A,2N2219,A are Silicon NPN Planar Epitaxial Transistors designed for small signal general purpose and , CHARACTERISTICS (Ta=25°C) 2N2218 2N2219 60 5.0 30 2N2218A 2N2219A 75 6.0 kQ 800 0.8 3.0 -65 to +200°C , 2.6 2N2218 2N2218A 2N2219A Min Max 10 10 10 75 6.0 ko 0.3 1.0 1.2 2.0 2N2219 V de Vdc Vdc mAdc , ,2N2219 Only) 20 30 - hFE VCE=10V, IC=500mA(2N22l8A,2N2219A Only) 25 ko - fT VCE=20V, IC=20mA,f
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2n2219 central 2N22l8 2N2219A NPN 2N22L

2n2219

Abstract: 2N2218 TECHNICAL DATA MIL-PRF 2N2218, A, AL JAN, JTX, JTXV, JANS 2N2219, A, AL JAN, JTX, JTXV, JANS , Current Total Power Dissipation 2N2218 2N2219 2N2218A; AL 2N2219A; AL 30 60 5.0 50 75 , , 2N2218A 2N2219, 2N2219A TO- 39 (TO-205AD) THERMAL CHARACTERISTICS Characteristics Thermal , -5 ELECTRICAL CHARACTERISTICS Characteristics Symbol Min. Max. Unit 2N2218, 2N2219 2N2218A, AL, 2N2219A, V(BR)CEO 30 50 2N2218, 2N2219 2N2218A, AL, 2N2219A, IEBO 10 10 10 µAdc Adc
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OCR Scan
A7540 2219a N2219 2219N N228 EBO2 2218-2N2218A-2N 2219-2N2219A

2N2219

Abstract: 2N2218 SEMICONDUCTOR TECHNICAL DATA 2N2219« 2N2219A ' _ S ^ J Î L0NCS 2805 Vet«ra/>s Highway , 2N2218A. 2N2219A v {BR )C B O 2N 2218,2N 2219 2N2218A, 2N2219A v (B R )E B O 2N2218 2N2219 2N2218A. 2N 2219A `C E S 2N2218. 2N2219 2N2218A, 2N2219A 0.01 0.01 (continued] 5.0 60 60 75 30 50 Vdc Vdc Sym bol , ) Ta = 150 C ; (V c B = 50 Vdc)
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2n22191 F2N2219 2n 2219 H12B NPN 2N 2219 2219

N2219

Abstract: 2N2219 DISCRETE SEMICONDUCTORS DATA SHEET M3D111 2N2219; 2N2219A NPN switching transistors , Sep 03 Philips Semiconductors Product specification NPN switching transistors 2N2219 , switching · DC and VHF/UHF amplification, for 2N2219 only. 1 handbook, halfpage 3 2 DESCRIPTION , PARAMETER collector-base voltage CONDITIONS MIN. MAX. UNIT open emitter 2N2219 60 V - 75 V 2N2219 - 30 V 2N2219A VCEO - 2N2219A - 40 V -
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Q62702-F109 Q62702-F133 Q62702-S29 Q62702-F59 F133 siemens 2218 AKTIENGESELLSCHAF-2N2218A
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