500 MILLION PARTS FROM 12000 MANUFACTURERS

DATASHEET SEARCH ENGINE

Top Results

Part Manufacturer Description Datasheet BUY
2N2219AL Microsemi Corporation Small Signal Bipolar Transistor, 0.8A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, TO-5, TO-5, 3 PIN visit Digikey Buy
2N2219 Microsemi Corporation Small Signal Bipolar Transistor, 0.8A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon, TO-205AD, TO-39, 3 PIN visit Digikey Buy
2N2219A Microsemi Corporation Small Signal Bipolar Transistor, 0.8A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, TO-205AD, TO-39, 3 PIN visit Digikey Buy
2N2219A Central Semiconductor Corp Small Signal Bipolar Transistor, 0.8A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, TO-39, TO-39, 3 PIN visit Digikey Buy
2N2219 Central Semiconductor Corp Small Signal Bipolar Transistor, 0.8A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon, TO-39, TO-39, 3 PIN visit Digikey Buy
JANTX2N2219AL Microsemi Corporation Small Signal Bipolar Transistor, 0.8A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, TO-5, TO-5, 3 PIN visit Digikey Buy

2N2219 transistor

Catalog Datasheet MFG & Type PDF Document Tags

2N2219

Abstract: 2N2219 transistor TECHNICAL DATA NPN SWITCHING SILICON TRANSISTOR Qualified per MIL-PRF-19500/251 Devices 2N2218 2N2218A 2N2218AL 2N2219 2N2219A 2N2219AL Qualified Level JAN JANTX JANTXV JANS MAXIMUM RATINGS Ratings , Top, Tstg 2N2218 2N2219 30 60 5.0 2N2218A; L 2N2219A; L 50 75 6.0 Unit Vdc Vdc Vdc mAdc W W 0 C Unit C/W 800 0.8 3.0 -55 to +200 Max. 59 TO- 39* (TO-205AD) 2N2218, 2N2218A 2N2219 , Cutoff Current VCE = 30 Vdc VCE = 50 Vdc 2N2218; 2N2219 2N2218A; L; 2N2219A; L 2N2218; 2N2219 2N2218A; L
Microsemi
Original
2N2219 transistor NPN transistor 2N2218 transistor transistor 2N2219 Transistor 2N2219A transistor 2n2218 JAN2N2218L JANTXV2N2219L 2N2218L

2n2219

Abstract: 2N2219 transistor : (978) 689-0803 Website: http: //www.microsemi.com NPN-SWITCHIN SILICON TRANSISTOR Qualified per MIL-PRF-19500/251 DEVICES LEVELS 2N2218 2N2218A 2N2218AL 2N2219 2N2219A 2N2219AL * Also , Symbol 2N2218 2N2219 2N221A; L 2N2219A; L Unit Collector-Emitter Voltage VCEO 30 , Conditions Thermal Resistance, Junction-to-Case TO-39 (TO-205AD) 2N2218, 2N2218A 2N2219, 2N2219A , IE = 10mAdc 2N2218; 2N2219 2N2218A; 2N2219A; L Emitter-Base Cutoff Current VEB = 5.0Vdc VEB =
Microsemi
Original
JANSR2N2219 Transistor 2N2218a 2N2218-2N2219 2N2218A-2N2219A 2N2219 JANTX transistor 2n2218 datasheet JANSR2N2218 T4-LDS-0091 100MH

2N2219

Abstract: 2N2218-2N2219 TECHNICAL DATA MIL-PRF 2N2218, A, AL JAN, JTX, JTXV, JANS 2N2219, A, AL JAN, JTX, JTXV, JANS QML DEVICES Processed per MIL-PRF-19500/251 NPN SWITCHING SILICON TRANSISTOR MAXIMUM RATINGS , Current Total Power Dissipation 2N2218 2N2219 2N2218A; AL 2N2219A; AL 30 60 5.0 50 75 , , 2N2218A 2N2219, 2N2219A TO- 39 (TO-205AD) THERMAL CHARACTERISTICS Characteristics Thermal , -5 ELECTRICAL CHARACTERISTICS Characteristics Symbol Min. Max. Unit 2N2218, 2N2219 2N2218A, AL
New England Semiconductor
Original
2n2219a npn transistor for 2n2218a

2N2219

Abstract: 2N2219 transistor TECHNICAL DATA NPN SWITCHING SILICON TRANSISTOR Qualified per MIL-PRF-19500/251 Devices 2N2218 2N2218A 2N2218AL Qualified Level JAN JANTX JANTXV JANS 2N2219 2N2219A 2N2219AL MAXIMUM , Temp. Range 2N2218 2N2219 2N2218A; L 2N2219A; L 30 60 5.0 50 75 6.0 VCEO VCBO , - 39* (TO-205AD) 2N2218, 2N2218A 2N2219, 2N2219A THERMAL CHARACTERISTICS Characteristics Symbol , Collector-Base Cutoff Current VCE = 30 Vdc VCE = 50 Vdc 2N2218; 2N2219 2N2218A; L; 2N2219A; L 2N2218
Microsemi
Original
transistor 2N2219 data sheet 2N2219 JANTXV N2218

2N2219

Abstract: 2N2219A TECHNICAL DATA 2N2218, 2N2218A JAN, JTX, JTXV 2N2218AL JAN, JTX, JTXV 2N2219, 2N2219A JAN, JTX , SILICON TRANSISTOR MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base , Junction Temperature Range Symbol VCEO VCBO VEBO IC PT 2N2218 2N2219 30 60 5.0 2N2218A; L 2N2219A; L 50 75 6.0 800 Unit Vdc Vdc Vdc mAdc W W 0 C 2N2218, 2N2218A 2N2219, 2N2219A TO- 39 (TO , Voltage IC = 10 mAdc Emitter-Base Cutoff Current VEB = 4.0 Vdc 2N2218, 2N2219 2N2218A, L, 2N2219A, L
New England Semiconductor
Original

2N2222A motorola

Abstract: equivalent transistor 2N2222 f MAXIMUM RATINGS , Vdc Collector Current â'" Continuous ic 800 800 mAdc 2N2218A 2N2219,A 2N2222,A Total Device , Range TJ' Tstg -65 to +200 °C THERMAL CHARACTERISTICS Characteristic Symbol 2N2218A 2N2219,A , , Junction to Case R0JC 58 145.8 °c/w 2N2218A,2N2219,A* 2N2222,A* 2N2218, A/2N2219,A CASE 79-04 TO-39 (TO , 10 Vdc) 2N2218A 2N2219.A, 2N2222,A hFE 20 35 â'" 0C = 1-0 mAdc, Vce = 10 Vdc) \ 2N2218A 2N2219
-
OCR Scan
2N2222A 2N2222A motorola equivalent transistor 2N2222 2n2222 equivalent s parameters of 2N2222 equivalent of 2n2222 motorola 2N2219

2N2905 2N2219

Abstract: 2n2219 amplification, for 2N2219 only. DESCRIPTION NPN switching transistor in a TO-39 metal package. PNP , current (max. 800 mA) · Low voltage (max. 40 V). 2N2219; 2N2219A PINNING PIN 1 2 3 emitter base , REFERENCE DATA SYMBOL VcBO PARAMETER collector-base voltage 2N2219 2N2219A collector-emitter voltage 2N2219 2N2219A collector current (DC) total power dissipation DC current gain transition frequency 2N2219 , System (IEC 134). 2N2219; 2N2219A SYMBOL VcBO 2N2219 2N2219A V CEO PARAMETER collector-base
-
OCR Scan
2N2905 2N2219 2N2905A RS 2N2219A philips 2N2219 2N2905 UHF power TRANSISTOR PNP TO-39 2N2905 2N2905A LB826

2n2219 equivalent

Abstract: 2N2219 Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298 NPN-SWITCHING SILICON TRANSISTOR Qualified per MIL-PRF-19500/251 DEVICES LEVELS 2N2218 2N2218A 2N2218AL 2N2219 2N2219A 2N2219AL * Also , 2N2218 2N2219 30 Collector-Base Voltage VCBO 60 75 Vdc Emitter-Base Voltage VEBO , Resistance, Junction-to-Case TO-39 (TO-205AD) 2N2218, 2N2218A 2N2219, 2N2219A Note: (1) Derate , ; 2N2219 2N2218A; 2N2219A / AL Emitter-Base Cutoff Current VEB = 5.0Vdc VEB = 6.0Vdc VEB = 4.0Vdc
Microsemi
Original
2n2219 equivalent equivalent transistor of 2n2219a similar 2N2219 transistor equivalent for 2N2219 2n2219 equivalent transistor 2N2219A equivalent

2n2219

Abstract: 2n2219 equivalent Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298 NPN-SWITCHING SILICON TRANSISTOR Qualified per MIL-PRF-19500/251 DEVICES LEVELS 2N2218 2N2218A 2N2218AL 2N2219 2N2219A 2N2219AL * Also , VCEO 2N2218 2N2219 30 Collector-Base Voltage VCBO 60 75 Vdc Emitter-Base Voltage , Thermal Resistance, Junction-to-Case TO-39 (TO-205AD) 2N2218, 2N2218A 2N2219, 2N2219A Note: (1 , ; 2N2219 2N2218A; 2N2219A / AL Emitter-Base Cutoff Current VEB = 5.0Vdc VEB = 6.0Vdc VEB = 4.0Vdc
Microsemi
Original

2N2219

Abstract: 2N2219A 2N2219 2N2219A NPN Silicon Transistor JEDEC TO-39 Case DESCRIPTION The CENTRAL SEMICONDUCTOR 2N2218,A,2N2219,A are Silicon NPN Planar Epitaxial Transistors designed for small signal general purpose and , CHARACTERISTICS (Ta=25°C) 2N2218 2N2219 60 5.0 30 2N2218A 2N2219A 75 6.0 kQ 800 0.8 3.0 -65 to +200°C , =50mA IC=150mA, i B~15mA IC=500mA, lB=50mA 2N2218 2N2219 Min Max 10 10 60 5.0 , 30 O.i» 1.6 1.3 2.6 2N2218 2N2218A 2N2219A Min Max 10 10 10 75 6.0 ko 0.3 1.0 1.2 2.0 2N2219 V de Vdc Vdc mAdc
-
OCR Scan
2n2219 central 2N22l8 2N2219A NPN 2N22L

2n2219

Abstract: _ - M 10 n 20 n 2N2219 2N2219A Silicon planar epitaxial transistor 2N2219 , 2N2219 2N2219A SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N transistors in a TO-39 metal , switching. The 2N2219 is also suitable fo r d.c. and v.h.f./u.h.f. amplifiers. QUICK REFERENCE DATA 2N2219 , 2N2219 2N2219A RATINGS Lim iting values in accordance w ith the Absolute Maximum Ssystem (IEC 134) 2N2219A 2N2219 Collector-base voltage (open emitter) VCBO max. 60 75 V
-
OCR Scan
1N916

2n2219

Abstract: 2n2219 application 2N2219, 2N2219A, 2N2219AL Small Signal Switching Transistor NPN Silicon Features http , TO-39 CASE 205AB (2N2219, 2N2219A) Stresses exceeding Maximum Ratings may damage the device , : 2N2219/D 2N2219, 2N2219A, 2N2219AL ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted , ) 1. Pulse Test: Pulse Width = 300 ms, Duty Cycle 2.0%. 2N2219 2N2219A/AL 2N2219 2N2219A/AL ton - - - - 40 35 250 300 ns 2N2219 2N2219A/AL |hfe| hfe 2.5 50 75 - - 12 - - 8.0 25 - - 2N2219 2N2219A/AL
ON Semiconductor
Original
2n2219 application JAN2N2219 JANTX2N2219 205AA JAN2N2219/A JANTX2N2219/A JANTXV2N2219/A JAN2N2219AL JANTX2N2219AL

2n2219

Abstract: 2N2219, 2N2219A, 2N2219AL Small Signal Switching Transistor NPN Silicon http://onsemi.com , EMITTER °C/W Operating and Storage Junction Temperature Range TOâ'39 CASE 205AB (2N2219 , Industries, LLC, 2012 August, 2012 â' Rev. 1 1 Publication Order Number: 2N2219/D 2N2219 , â'Emitter Breakdown Voltage (IE = 10 mAdc) 2N2219 2N2219A/AL Emitterâ'Base Cutoff Current (VEB = 5.0 Vdc) (VEB = 6.0 Vdc) (VEB = 4.0 Vdc) 2N2219 2N2219A/AL All Collectorâ'Emitter Cutoff
ON Semiconductor
Original
JANTXV2N2219AL 2N2219/D

2N2219

Abstract: 2N2219, 2N2219A, 2N2219AL Small Signal Switching Transistor NPN Silicon Features http , TO-39 CASE 205AB (2N2219, 2N2219A) THERMAL CHARACTERISTICS Characteristic Thermal Resistance , © Semiconductor Components Industries, LLC, 2012 August, 2012 - Rev. 1 1 Publication Order Number: 2N2219/D 2N2219, 2N2219A, 2N2219AL ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted , ) 1. Pulse Test: Pulse Width = 300 ms, Duty Cycle 2.0%. 2N2219 2N2219A/AL 2N2219 2N2219A/AL ton - - -
ON Semiconductor
Original

2N2222A LCC1

Abstract: 2N2222 LCC3 for devices beginning "2N2219" Semelab Home Datasheets are downloaded as Acrobat PDF files. Bipolar Products PRODUCT 2N2219 2N2219A 2N2219ACECC 2N2219A-JQR-B 2N2219AL 2N2219CECC 2N2219 , part, please contact us. class="hl">2N2219.php.html [25 , : 2N2222AQF Quad Transistor Quad Ceramic Flat Pack NPN LCC10 NPN NPN VDSS IC(cont) ID(cont) HFE(min) HFE(max , /0.15 10/0.15 250MHz 250MHz 250MHz 2N2222AQLCC20 Quad Transistor 2N2222EX8CSM 8 Transistor Array
Semelab
Original
2N2222A LCC1 2N2222 LCC3 transistor 2n2222 TO-90 2N2222ACSM4 2N2222ADCSM 2N2222A2 2N1132 2N1132CSM 2N1132CSM-JQR-B 2N1132DCSM 2N1132-JQR-B 2N1724

transistor Q2N2219

Abstract: Q2N2219 580 Pleasant St. Watertown, MA 02472 PH: (617) 926-0404 FAX: (617) 924-1235 2N2219 Features · · · · SWITCHING TRANSISTOR JAN, JANTX, JANTXV Meets MIL 19500 /251 Collector - Base , DSW2N2219 (34724) 2N2219 Electrical Characteristics (TA = 25°C unless otherwise noted) OFF , MSCO935A 10-15-98 DSW2N2219 (34724) 2N2219 Electrical Characteristics (TA = 25°C unless , > (34724) 2N2219 TO-39 CASE OUTLINE DIE CHARACTERISTICS Back is Collector Chip Thickness is
Microsemi
Original
transistor Q2N2219 Q2N2219 2N2219 bipolar ic 6707 q2n* npn transistor
Abstract: connected to the case. They are primar­ ily intended for high speed switching. The 2N2219 is also suitable ford.c. and v.h.f./u.h.f. amplifiers. QUICK REFERENCE DATA 2N2219 2N2219A v CBO max. 60 75 , Qualification approved to CECC 50 004-029 August 1990 705 AMER P H IL IP S /D IS C R E T E 2N2219 , accordance with the Absolute Maximum Ssystem (IEC 134) 2N2219A 2N2219 Collector-base voltage (open , CHARACTERISTICS Tj = 25 °C unless otherwise specified 2N2219 Collector cut-off current I e = 0 ;V cb = 5 0 V -
OCR Scan
7ZS9322 S3T31 2806E 7Z85736

2n2219

Abstract: 2N2905 2N2219 application DISCRETE SEMICONDUCTORS DATA SHEET M3D111 2N2219; 2N2219A NPN switching transistors , Sep 03 Philips Semiconductors Product specification NPN switching transistors 2N2219 , switching · DC and VHF/UHF amplification, for 2N2219 only. 1 handbook, halfpage 3 2 DESCRIPTION 2 NPN switching transistor in a TO-39 metal package. PNP complement: 2N2905 and 2N2905A. 3 , PARAMETER collector-base voltage CONDITIONS MIN. MAX. UNIT open emitter 2N2219 60 V
Philips Semiconductors
Original
2N2905 2N2219 application reference du transistor 2N2219 c2n2219 2n2219 philips 2N-2219A philips 2n2219 st MAM317 SCA55

2N2222A motorola

Abstract: 2n2222 motorola MOTOROLA Order this document by 2N2219/D SEMICONDUCTOR TECHNICAL DATA General Purpose Transistors COLLECTOR 3 2 BASE LAST SHIP 21/03/00 2N2219 2N2219A* 2N2222 2N2222A* NPN Silicon *Motorola Preferred Devices 1 EMITTER MAXIMUM RATINGS Symbol 2N2219 2N2222 2N2219A 2N2222A , 2N2219,A 2N2222,A Collector Current - Continuous Total Device Dissipation @ TA = 25°C Derate above 25°C PD 0.8 4.57 0.4 2.28 PD 3.0 17.1 1.2 6.85 2 1 2N2219,A CASE
Motorola
Original
2n2222 motorola 2N2219A MOTOROLA 2N2219 MOTOROLA motorola 2n2222 motorola 2N2219A motorola 2N2222A 205AD 206AA

2N2219A

Abstract: 2n2219 DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D111 2N2219; 2N2219A NPN switching , 1997 Sep 03 Philips Semiconductors Product specification NPN switching transistors 2N2219 , switching · DC and VHF/UHF amplification, for 2N2219 only. 1 handbook, halfpage 3 2 DESCRIPTION 2 NPN switching transistor in a TO-39 metal package. PNP complement: 2N2905 and 2N2905A. 3 , 75 V 2N2219 - 30 V 2N2219A - 40 V - 800 mA Tamb 25 °C -
Philips Semiconductors
Original
VHF power TRANSISTOR PNP TO-39 ST 2N2905 Transistor 2N2905A
Showing first 20 results.