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1 - 35 of about 35 for 2N2193 |
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First line: 2N2193 2N2193 silicon planar transistor designed medium power switching amplifier applications. TO-39 ABSOLUTE MAXIMUM RATINGS Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Total Power Dissipation Operating Junction Storage Temperature VCBO VCEO Ptot Tj,Tstg Abstract: .. 2N2193 NPN SILICON TRANSISTOR 2N2193 is NPN silicon planar transistor designed for medium power switching and amplifier applications. TO-39 TO-39 ABSOLUTE MAXIMUM RATINGS Collector-Base Voltage .. Tags: datasheet abstract.. |
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First line: 2N2453 2N3680* 2n1485 2n2222a SOT23 SEELAB ANUFACTURING /-27 SEELAB Type 708\ 2N1132 2N1483/ 2N1484^ 2N1485 [2N1486 2N1613 2N1711 *2N2060 2N2192 2N2192A Abstract: .. /CECC CV-0 CV-0 CV-0 CV-0 CV-0 BS-0 CV-0 BS-0 CV-0 BS-0 CV-0 BS-0 K CV-0 CV-0 2N2193 2N2193 jj Cs Uj >2 UJ- ->2 2N2218 2N2218 2N2218A 2N2218A 2N2219 2N2219 2N2219A 2N2219A 2N2221 2N2221 2N2221A 2N2221A 2N2222 2N2222 2N2222A 2N2222A ÃŽN2223 N2223 2N2223A 2N2223A 2N2243- 2N2243- .. Tags: 2n2222a SOT23 2n1485 2N3680* 2N2453 datasheet abstract.. |
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First line: Electrical Characteristics Unless Otherwise Specified) Type VCBO ^CEO Vebo 'cm 'cBO 'ces ^CE/SUT) SEISA7) (pA) 0(V) (MA) 0(V) (mA) (MHz) (mA) 2N1987 2N1988 2N1989 Abstract: .. 5 0.8 1 0.01 30 15 0.1 10 0.35 1.3 150 20 50 50 75 10 10 100 300 150 10 35 500 10 15 1000 10 70 150 1 2N2193 80 50 8 0.8 1 0.01 60 15 0.1 10 0.35 1.3 150 20 50 50 30 10 10 40 120 150 10 20 500 10 15 1000 10 30 150 1 2N2194 2N2194 60 .. Tags: datasheet abstract.. |
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First line: SILICON TRANSISTORS, EPITAXIAL TRANSISTORS SILICIUM, EPITAXI 2192, 2193, large signal amplification Amplification grands signaux Medium current switching Commutation moyen .courant vCEO 2192,A 2193,A Abstract: .. Â Sauf indications contraires 2N2192 2N2192 2N 2192 A 2N2193 2N 2193 A Collector-base voltage Tension collecteur-base vCBO 60 80 V Collector-emitter voltage Tension collecteur-Ã metteur vCEO .. Tags: datasheet abstract.. |
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First line: 2N2896 2N2102A 2N2310* 2N2310 Discrete Devices Transistors (Cont.) Genera Purpose Amplifiers (Cont.) Type Polarity Maximum Ratings Electrical Characteristics Package Ambient Volts Volts Volts Hfe@ VcE(Sat) lC/lB Min/Max Volts mA/mA 2N1990 20/- 2/0.2 2N2008 40/120 25/5 TO-39 Abstract: .. 0.25 150/15 50 20 TO-39 TO-39 2N2192B 2N2192B NPN 800 60 40 5 100/300 150 0.18 150/15 50 20 TO-39 TO-39 2N2193 NPN 800 80 50 8 40/120 150 0.35 150/15 50 20 TO-39 TO-39 2N2193A NPN 800 80 50 8 40/120 150 0.25 150/15 50 20 TO-39 TO-39 2N2193B .. Tags: 2N2310 2N2310* 2N2102A 2N2896 datasheet abstract.. |
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First line: MflE 6133167 D00aM33 BI-POLAR TRANSISTORS (CECC HIGH REL) HIGH ENERGY T^T-I Type Number Code Package Vceo (cont) Vce/lc T039 40min 10/0.15 100H T039 75min 10/0.15 100H T018 20min l/10m 200M 706A T018 20min l/10m 200M 718A T018 10/0.15 200H Abstract: .. 15 50M 0.8 2N2193 HR NPN T039 T039 50 1 40- 120 10/0.15 50H 0.8 2N2193A HR NPN T039 T039 50 1 40- -120 10/0.15 50M 0.8 2N2194 2N2194 HR NPN T039 T039 40 1 15min 15min 10/10m 50M 0.8 2N2194A 2N2194A HR NPN T039 T039 40 1 15min 15min 10/10m 50M 0.8 2N2210 2N2210 .. Tags: datasheet abstract.. |
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First line: 2N2453 N2219 Type sedelab Reliability Option Polarity Package VceO Abstract: .. 15 50M 0.8 2N2193 HI-REL NPN * T039 T039 50 1 40-120 10/0.15 5 OH 0.8 ^ f 2N2193A HI-REL NPN * TO 3 9 50 1 40-120 10/0.15 50M 0.8 2N2218 2N2218 HI-REL NPN * T039 T039 30 0.8 40-120 10/0.15 250M 250M 0.8 j' i â– 2N2218A 2N2218A HI-REL NPN .. Tags: N2219 2N2453 datasheet abstract.. |
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First line: Medium Power Amplifiers Switches TYPE POLA- MAXIMUM RATINGS VCE(sat) COMPLE- RITY CASE VCEO MENTARY (mW) (MHz) (PF) TYPE 2N720A TO-18 0.15 2N721 TO-18 0.15 2N91I TO-18 0.05 2N956 TO-18 0.15 2N1132 TO-39 0.15 Abstract: .. 100 300 150 10 0.25 0.15 50 20 - 2N2192B 2N2192B N TO-39 TO-39 800 1 40 100 300 150 10 0.18 0.15 50 20 - 2N2193 N TO-39 TO-39 800 1 50 40 120 150 10 0.35 0.15 50 20 - 2N2193A N TO-39 TO-39 800 1 50 40 120 150 10 0.25 0.15 50 20 _ 2N2193B N TO-39 TO-39 .. Tags: datasheet abstract.. |
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First line: 2n696 characteristic Silicon Transistors Type Case Maximum Ratings amb. Characteristics VCE(SAT) Pto. Min. Max. Min. Mc/s Max. Microwave TIXS12 Power Source TIXS13 1200t 2N696 Medium Power 2N697 Abstract: .. 5 10 08 150 100 300 50 50 150 15 0-35 2N2192A 2N2192A T05 PE 60 40 5 10 0-8 150 100 300 50 50 150 15 0-25 2N2193 T05 PE 80 50 8 10 0-8 150 40 120 50 50 150 15 0-35 2N2193A T05 PE 80 50 8 10 0-8 150 40 120 50 50 150 15 0-25 2N2194 2N2194 .. Tags: 2n696 characteristic datasheet abstract.. |
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First line: Medium Power Amplifiers Switches TYPE POLARITY CASE MAXIMUM RATINGS VCE(SAT) (MHz) (pF) COMPLEMENTARY TYPE (mW) VCEO (mA) 2N2017 TO-39 1000 2049 TO-39 0.01 2N2102 TO-39 1000 0.15 2N4036 2N2102A TO-39 1000 0.15 2N2192 TO-39 0.35 0.15 Abstract: .. 40 100 300 150 10 0.25 0.15 50 20 — 2N2192B 2N2192B IM TO-39 TO-39 800 1 40 100 300 150 10 0.18 0.15 50 20 — 2N2193 N TO-39 TO-39 800 1 50 40 120 150 10 0.35 0.15 50 20 — 2N2193A N TO-39 TO-39 800 1 50 40 120 150 10 0.25 0.15 50 20 - 2N2193B .. Tags: datasheet abstract.. |
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First line: SP3725* Q2T3725 Discrete Devices Transistors (Cont.) Genera Purpose Amplifiers (Cont.) Type Polarity Maximum Ratings Electrical Characteristics Package Ambient Volts Volts Volts Hfe@ VcE(Sat) lC/lB Min/Max Volts mA/mA 2N1990 20/- 2/0.2 2N2008 40/120 25/5 TO-39 Abstract: .. 0.25 150/15 50 20 TO-39 TO-39 2N2192B 2N2192B NPN 800 60 40 5 100/300 150 0.18 150/15 50 20 TO-39 TO-39 2N2193 NPN 800 80 50 8 40/120 150 0.35 150/15 50 20 TO-39 TO-39 2N2193A NPN 800 80 50 8 40/120 150 0.25 150/15 50 20 TO-39 TO-39 2N2193B .. Tags: Q2T3725 SP3725* datasheet abstract.. |
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First line: CENTRAL SEMICONDUCTOR 000021S _1989963 CENTRAL SEMICONDUCTOR 00215 METAL SWITCHING GENERAL PURPOSE (Cont'd.) TYPE vce(s)at 'cbo CASE 2n910 .025 to-18 2n911 .025 2n912 .025 to-18 2n956- to-18 2n1052 to-5 Abstract: .. 150 10 .25 15 150 50 20 .01 30 to-5 2n2192b 2n2192b 60 40 5 100 300 150 10 .18 15 150 50 20 .01 30 to-5 2n2193 80 50 8 40 120 150 10 — 15 150 50 20 .01 60 to-5 2n2193a 80 50 8 40 120 150 10 — 15 150 50 20 .01 60 to-5 2n2193b .. Tags: datasheet abstract.. |
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First line: CENTRAL SEMICONDUCTOR 1989963 CENTRAL'SEMICONDUCTOR nflTlb3 ODDOS1S 00215 METAL SWITCHING GENERAL PURPOSE (Cont'd.) TYPE VCE(s)at 'CBO CASE 2N910 .025 TO-18 2N911 .025 TO-18 2N912 .025 TO-18 Abstract: .. 150 10 .25 15 150 50 20 .01 30 TO-5 2N2192B 2N2192B 60 40 5 100 300 150 10 .18 15 150 50 20 .01 30 TO-5 2N2193 80 50 8 40 120 150 10 — 15 150 50 20 .01 60 TO-5 2N2193A 80 50 8 40 120 150 10 — 15 150 50 20 .01 60 TO-5 2N2193B .. Tags: datasheet abstract.. |
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First line: 2n696 characteristic Silicon Transistors Type Case Maximum Ratings amb. Characteristics VCE(SAT) Pto. Min. Max. Min. Mc/s Max. Microwave TIXS12 Power Source TIXS13 1200t 2N696 Medium Power 2N697 Abstract: .. 5 10 08 150 100 300 50 50 150 15 0-35 2N2192A 2N2192A T05 PE 60 40 5 10 0-8 150 100 300 50 50 150 15 0-25 2N2193 T05 PE 80 50 8 10 0-8 150 40 120 50 50 150 15 0-35 2N2193A T05 PE 80 50 8 10 0-8 150 40 120 50 50 150 15 0-25 2N2194 2N2194 .. Tags: 2n696 characteristic datasheet abstract.. |
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First line: 2N2645 2N2909 0134^3 0QQQ13H f^-fl-21 GENERAL PURPOSE MEDIUM SPEED AMPLIFIERS (Cont'd) Maximum Ratings Electrical Characteristics Type Ambient Volts Volts Volts VcE(Sat) Ic/lB Case Min/Max Volts mA/mA 2N2353 2N2195A 2K2353A 2N4383 2K4384 100/500 100/500 0.01 0.01 0.35 0.25 0.25 0.35 0.35 150/15 150/ Abstract: .. /15 50 50 50 50 70 15 20 15 20 15 TO-46 TO-46 TO-5 TO-46 TO-46 TO-5 TO-5 2N2897 2N2897 2N1613 2N1613 2N718A 2N718A 2KL711 2KL711 2N2193 500 800 500 800 800 60 75 75 75 80 45 50* 50* 50* 50 7 7 7 7 8 50/200 40/120 40/120 100/300 40/120 150 150 150 150 .. Tags: 2N2909 2N2645 datasheet abstract.. |
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First line: 2N4043 2N3162 BD117 2N4042 2N5508 SYMBOLS CODES EXPLAINED SYMBOLS CODES COMMON MORE THAN TECHNICAL SECTION LINE Type Revised Specificaions Non-JEDEC manufacured ouside U'S.A. TYPE Swiching ype, also lised Secion Chopper, also lised Secion Caegory These ypes also included elsewhere oher characerisics Abstract: .. Pt-800mW Pt-800mW ; Two 2N2193 Transistors Pt-600mW Pt-600mW ; Two 2N2195 2N2195 Transistors 79# 80 81 12A8 12A8 12A104 12A104 12A105 12A105 6 6 6 N N-PL N Si Si Si L2b L2 T018 T018 Pt Both Sides -500mW -500mW ;hFE 1/hFE2-.60min 60min ;VBE 1-VBE2-15mVmax 1-VBE2-15mVmax . .. Tags: 2N5508 2N4042 BD117 2N3162 2N4043 datasheet abstract.. |
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First line: 2N3519 2N3942 GT123 2N1019 BD117 SYMBOLS CODES EXPLAINED SYMBOLS CODES COMMON MORE THAN TECHNICAL SECTION LINE Type Revised Specificaions Non-JEDEC manufacured ouside U'S.A. TYPE Swiching ype, also lised Secion Chopper, also lised Secion Caegory These ypes also included elsewhere oher characerisics. Abstract: .. Pt-800mW Pt-800mW ; Two 2N2193 Transistors Pt-600mW Pt-600mW ; Two 2N2195 2N2195 Transistors 79# 80 81 12A8 12A8 12A104 12A104 12A105 12A105 6 6 6 N N-PL N Si Si Si L2b L2 T018 T018 Pt Both Sides -500mW -500mW ;hFE 1/hFE2-.60min 60min ;VBE 1-VBE2-15mVmax 1-VBE2-15mVmax . .. Tags: BD117 2N1019 GT123 2N3942 2N3519 datasheet abstract.. |
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First line: 2N4418 1N4008 diode Diode 1N4008 1N4008 1N4548 Diode Cross-Reference Guide Recommended Fairchild Device Abstract: .. 2N2049 2N2049 2N2086 2N2086 2N2087 2N2087 2N2102 2N2102 2N2106 2N2106 2N2107 2N2107 2N2108 2N2108 2N2193 2N2193A 2N2194 2N2194 2N2194A 2N2194A 2N2194B 2N2194B 2N2195 2N2195 2N2195B 2N2195B 2N2198 2N2198 2N2206 2N2206 2N2217 2N2217 2N2218 2N2218 2N2218A 2N2218A 2N2219 2N2219 2N2219A 2N2219A 2N2220 2N2220 2N2221 2N2221 2N2221A 2N2221A 2N2222 2N2222 2N2222A 2N2222A .. Tags: 1N4548 1N4008 Diode 1N4008 1N4008 diode 2N4418 you by my side U1899* u1898 cross U1898 U1897 tn6725 TN4037* TN3725 TMPTA06 TMPT5401 TMPT4403 datasheet abstract.. |
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First line: BRX49 equivalent 1N5802* BA164* 2n5910 BF244 datasheet Industry Part Number Central Process Page Industry Part Number Central Process Page 1N456 .CPD64 1N456A.CPD64 1N457 .CPD64 1N457A.CPD64 1N458 .CPD64 1N458A.CPD64 1N459A.CPD64 1N461A.CPD83V 1N462A.CPD83V 1N482 .CPD64 1N483B.CPD64 1N484B.CPD64 1N4 Abstract: .. 2N2193 ..CP305 CP305 ..86 2N2193A..CP305 CP305 ..86 2N2195 2N2195 ..CP305 CP305 .. Tags: BF244 datasheet 2n5910 BA164* 1N5802* BRX49 equivalent to 106 bc239 to 106 2n5133 TIP135 TA7368P* SE9302 SE7055* PN5910 PN4858 PN4391 PN3694 PN3692* 1N456 1N456A 1N457 1N457A 1N458 1N458A 1N459A 1N461A 1N462A 1N482 1N483B 1N484B 1N485B 1N486B 1N625 1N626 1N627 1N628 1N629 1N643 1N645 1N649 1N658 1N659 1N660 1N661 1N662 1N663 1N702A 1N703A 1N704A 1N705A 1N706A 1N746A 1N747A 1N748A 1N749A 1N750A 1N751A |
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First line: 2N2440 BSY52 bc140 transistor 2n2270 2n1840 TO-39 METAL-CAN PACKAGE TRANSISTORS (NPN) Maximum Ratings Electrical Characteristics Unless Otherwise Type VCBO vceo Vebo (Sal) (Sal) 'ces Freq (ma) (nriA) (mA) (MA) (pF) (MHz) (mA) (ns) (dB) (MHz) 2N3439 20.000 20.000 10.0 0.50 1.30 2N3742 0.200 3.000 10. Abstract: .. BSX46-16 BSX46-16 BSX46-S BSX46-S 2N3678 2N3678 60 100 100 100 100 100 100 100 100 75 2N1613 2N1613 2N1711 2N1711 75 75 2N2049 2N2049 2N2193 75 80 75 65 60 V 60 60 55 50 50 0.002 60 10.000 30 0.500 100 0.010 60 0.010 60 0.010 60 0.010 60 0.010 60 53fl33 53fl33 .. Tags: 2n1840 transistor 2n2270 bc140 BSY52 2N2440 datasheet abstract.. |
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First line: 2N2360 2N3298 jemitronicr Semitronics Corp. metal transistors cont silicon small signal transistors Abstract: .. 100/300 0.25 150/15 - 20 50 - - - - 2N2192B 2N2192B NPN TO 5 800 60 40 5 100/300 0.18 150/15 20 50 „ - 2N2193 NPN TO 5 800 80 50 8 40/120 0.35 150/15 _ 20 50 - - -- 2.N2193A N2193A NPN TO 5 800 80 50 8 40/120 0.25 150/15 - 20 50 - - - .. Tags: 2N3298 2N2360 datasheet abstract.. |
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First line: BC222 TRANSISTOR BSW12 SYMBOLS CODES EXPLAINED SYMBOLS CODES COMMON MORE THAN TECHNICAL SECTION LINE Type Revised Specificaions Non-JEDEC manufacured ouside U'S.A. TYPE Swiching ype, also lised Secion Chopper, also lised Secion Caegory These ypes also included elsewhere oher characerisics. Type Cros Abstract: .. Pt-800mW Pt-800mW ; Two 2N2193 Transistors Pt-600mW Pt-600mW ; Two 2N2195 2N2195 Transistors 79# 80 81 12A8 12A8 12A104 12A104 12A105 12A105 6 6 6 N N-PL N Si Si Si L2b L2 T018 T018 Pt Both Sides -500mW -500mW ;hFE 1/hFE2-.60min 60min ;VBE 1-VBE2-15mVmax 1-VBE2-15mVmax . .. Tags: BSW12 BC222 TRANSISTOR datasheet abstract.. |
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First line: 2N4043 ME2001 SYMBOLS CODES EXPLAINED TYPE CROSS-INDEX TECHNICAL SECTIONS Indicators separate manufacturers producing same type number (non-JEDEC) whose characteristics same. This manufacturer-identifying symbol (assigned D.A.T.A.) integral part type number Type Cross Index, Technical Data Sections) Abstract: .. Pt-800mW Pt-800mW ; Two 2N2193 Transistors Pt-600mW Pt-600mW ; Two 2N2195 2N2195 Transistors 79# 80 81 12A8 12A8 12A104 12A104 12A105 12A105 6 6 6 N N-PL N Si Si Si L2b L2 T018 T018 Pt Both Sides -500mW -500mW ;hFE 1/hFE2-.60min 60min ;VBE 1-VBE2-15mVmax 1-VBE2-15mVmax . .. Tags: ME2001 2N4043 datasheet abstract.. |
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First line: BC222 TRANSISTOR SYMBOLS CODES EXPLAINED TYPE CROSS-INDEX TECHNICAL SECTIONS Indicators separate manufacturers producing same type number (non-JEDEC) whose characteristics same. This manufacturer-identifying symbol (assigned D.A.T.A.) integral part type number Type Cross Index, Technical Data Sectio Abstract: .. Pt-800mW Pt-800mW ; Two 2N2193 Transistors Pt-600mW Pt-600mW ; Two 2N2195 2N2195 Transistors 79# 80 81 12A8 12A8 12A104 12A104 12A105 12A105 6 6 6 N N-PL N Si Si Si L2b L2 T018 T018 Pt Both Sides -500mW -500mW ;hFE 1/hFE2-.60min 60min ;VBE 1-VBE2-15mVmax 1-VBE2-15mVmax . .. Tags: BC222 TRANSISTOR datasheet abstract.. |
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First line: BC222 TRANSISTOR 2N4241 SYMBOLS CODES EXPLAINED Channel SILICON FIELD EFFECT TRANSISTORS )_[BVdss IBVgssJ Idss Vgs=0& Vds>Vp jyi_ GERMANIUM PNP| GERMANIUM NPN110. SILICON PNP|ll. SILICON High Power Transistors 40UC Abstract: .. Pt-800mW Pt-800mW ; Two 2N2193 Transistors Pt-600mW Pt-600mW ; Two 2N2195 2N2195 Transistors 79# 80 81 12A8 12A8 12A104 12A104 12A105 12A105 6 6 6 N N-PL N Si Si Si L2b L2 T018 T018 Pt Both Sides -500mW -500mW ;hFE 1/hFE2-.60min 60min ;VBE 1-VBE2-15mVmax 1-VBE2-15mVmax . .. Tags: 2N4241 BC222 TRANSISTOR datasheet abstract.. |
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First line: 2N5508* 2N1019 SYMBOLS CODES EXPLAINED Channel SILICON FIELD EFFECT TRANSISTORS )_[BVdss IBVgssJ Idss Vgs=0& Vds>Vp jyi_ GERMANIUM PNP| GERMANIUM NPN110. SILICON PNP|ll. SILICON High Power Transistors 40UC Abstract: .. 95 min. Pt-800mW Pt-800mW ; Two 2N2193 Transistors Pt-600mW Pt-600mW ; Two 2N2195 2N2195 Transistors 79# 80 81 12A8 12A8 12A104 12A104 12A105 12A105 6 6 6 N N-PL N Si Si Si L2b L2 T018 T018 Pt Both Sides -500mW -500mW ;hFE 1/hFE2-.60min 60min ;VBE 1-VBE2-15mVmax 1-VBE2-15mVmax .. Tags: 2N1019 2N5508* datasheet abstract.. |
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First line: NSDU05 NSDU07 Tansistos National Seiconducto Mediu Powe Typo Abstract: .. 10 30 15 75 100 300 70 35 15 0.01 0.1 10 150 500 1A 10 10 10 10 10 10 0.25 1.3 150 20 50 50 12 2N2193 TO-39 TO-39 80 50 10 80 15 30 40 120 30 20 15 0.01 0.1 10 150 500 1A 10 10 10 10 10 10 0.35 1.3 150 20 50 50 12 2N2193A TO-39 TO-39 80 .. Tags: NSDU07 NSDU05 datasheet abstract.. |
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First line: 2N3304* 2N4080 INTEX/ CORP jemiEron Corp, 4SLTSMb T-A7-01 silicon small signal transistors Onice Type Packege Maximum Ratings EltcUical ChaiactetKtics Ambient Volts Volts Volts Min/Man (Sat) IC/IB tOFF Power Gain Abstract: .. 2N2102 2N2102 2N2102A 2N2102A 2N2192 2N2192 2N2192A 2N2192A 2fl2192B 2fl2192B 2N2193 2N2193A 2N21936 2N2194 2N2194 2N2194A 2N2194A 2N21948 2N21948 2N2195 2N2195 2tl2195A 2tl2195A 2N219 2N219 O zrl2205 zrl2205 2112217 2N2218 2N2218 2N2218A 2N2218A 2N2219 2N2219 2N22 2N22 .19A 2N2220 2N2220 2N2221 2N2221 2N2211A 2N2211A 2rl1222 2rl1222 .. Tags: 2N4080 2N3304* datasheet abstract.. |
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First line: NSD102 transistor 2N3569 NSDU07 "NPN Transistors"2n3567 2N3567 NATL SEMICOND DISCRETE b501L3a T-27-CI Abstract: .. 2N2193. I T0-39 T0-39 I 80. 50. 8. 10. n. 40 30 20 15 2N2193A I T0-39 T0-39 80 50 8. 120. 10 150 500 1A 0.1 10 150 150 500 lA 0 .. Tags: 2N3567 "NPN Transistors"2n3567 NSDU07 transistor 2N3569 NSD102 datasheet abstract.. |
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First line: NSDU07 transistor 2N3569 d40p3 2N5715* 2N5715 NATL EMICND {DICRETE} bllH 003mE 1130 NATL EMICND, (DICRETE) 35412 Abstract: .. 2N2193. TO-39 TO-39 . 80. 50. 8. 10. 80. 120. ~ TEST CONDITIONS: 1 IC 50 rnA, VCC; 100V 100V ,Ie 1 ;le 2 ;5mA. 2 le=500 .. Tags: 2N5715 2N5715* d40p3 transistor 2N3569 NSDU07 datasheet abstract.. |
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First line: MP8706 bt1490 1N5004 BT808 BT1690 AMER PHILIPS/DISCRETE bbS3131 aOlbSbH T-Ol-oX INDUSTRY PART NUMBER NEAREST EQUIV. EQUIV. PKG. INDUSTRY PART NUMBER NEAREST EQUIV. EQUIV. PKG. 0105-50 BLU52 1N321 BYW56 0204-50 BLU52 1N321A BYW56 0510-25 BLV97 1N322 BYW56 12F5 BYX99-300 1N322A BYW56 Abstract: .. BSP40 BSP40 SOT-223 SOT-223 60 2N2108 2N2108 2N1893 2N1893 14 BSP42 BSP42 SOT-223 SOT-223 60 2N2350 2N2350 2N2222A 2N2222A 14 PXT2222A PXT2222A SOT-89 SOT-89 60 2N2193 2N3019 2N3019 14 BSR43 BSR43 SOT-89 SOT-89 60 2N2350 2N2350 2N2222A 2N2222A 14 PZT2222A PZT2222A SOT-223 SOT-223 60 2N2193 2N3019 2N3019 14 BSP43 BSP43 SOT-223 SOT-223 60 2N2350 2N2350 .. Tags: BT1690 BT808 1N5004 bt1490 MP8706 datasheet abstract.. |
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First line: PN222A bc 7-25 pnp SC3228 BC286 sC3228* CRIMSON SEMICONDUCTOR 15514CHb DODOETB 2514096 CRIMSON SEMICONDUCTOR 00293 "7"- DEVICF TYPE PACKAGE By.CEO BVCBO BVEBO ICBO M'N i-Al 2N1507 ro-5 100-300 2N1566 TO-5 60-200 2NI613 TO-S 40-120 2NI7U TO-5 100-300 Abstract: .. 120 7 2 60 40-120 10 150 15 60 2N2192 2N2192 NPN TO-39 TO-39 40 60 5 10 30 100-300 10 150 20 50 2N2193 NPN TO-39 TO-39 50 80 8 10 60 40-120 10 150 20 50 2N2195 2N2195 NPN TO-39 TO-39 25 45 5 100 30 20- 10 150 20 50 2N2205 2N2205 NPN TO-18 TO-18 12 25 3 25 15 20- 1 .. Tags: sC3228* BC286 SC3228 bc 7-25 pnp PN222A datasheet abstract.. |
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First line: BC169B BC63B MPS9681T CS1602B BC286 CRIMSON SEMICONDUCTOR aSlMCHb DDDDET3 2S14096 CRIMSON SEMICONDUCTOR 00293 DEVICE TYPE PACKAGE By.CEO BVCBO BVEBO ICBO i-ai (-a. v<"1 2N1507 ro-5 100-300 2N1566 TO-5 60-200 2N1613 TO-5 40-120 2NI711 TO-5 100-300 Abstract: .. 120 7 2 60 40-120 10 150 15 60 2N2192 2N2192 NPN TO-39 TO-39 40 60 5 10 30 100-300 10 150 20 50 2N2193 NPN TO-39 TO-39 50 80 8 10 60 40-120 10 150 20 50 2N2195 2N2195 NPN TO-39 TO-39 25 45 5 100 30 20- 10 150 20 50 2N2205 2N2205 NPN TO-18 TO-18 12 25 3 25 15 20- 1 .. Tags: BC286 CS1602B MPS9681T BC63B BC169B datasheet abstract.. |
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First line: BC407 1N34 equivalent 2N4360 ssp35n03 bc417 Industry Fairchild Closest Equivalent Industry Fairchild Closest Equivalent Industry Fairchild Closest Equivalent Industry Fairchild Closest Equivalent 1.5KE100A 1.5KE100CA 1.5KE10A 1.5KE10CA 1.5KE110A 1.5KE110CA 1.5KE11A 1.5KE11CA 1.5KE120A 1.5KE120CA 1.5 Abstract: .. 2N2193 TN3019A TN3019A 2N2193A TN3019A TN3019A 2N2194 2N2194 TN2219A TN2219A 2N2194A 2N2194A TN2219A TN2219A 2N2194B 2N2194B TN2219A TN2219A 2N2195 2N2195 .. Tags: bc417 ssp35n03 2N4360 1N34 equivalent BC407 ZVP3310F ZVP3306F ZVN3306F* W04L VN10LF VN10KN3 VN10KM equivalent vn10km cross VN10KM* VN10KE un4213 5KE100A 5KE100CA 5KE110A 5KE110CA 5KE120A 5KE120CA 5KE130A 5KE130CA 5KE150A 5KE150CA 5KE160A 5KE160CA 5KE170A 5KE170CA 5KE180A 5KE180CA 5KE200A 5KE200CA 5KE220A 5KE220CA 5KE250A 5KE250CA 5KE300A 5KE300CA 5KE350A 5KE350CA 5KE400A 5KE400CA |
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First line: mb8719 BC417 U664B k4005 k2645 BHIAB Electronics transistorer, Ditt fler typer lager rimlingen Denna visar lagerartiklar saknas priser viss information uppdatering sker kontinuerligt Maila eller ring artiklar inte prissatta Abstract: .. 2N2193 17.00. 2N2218 2N2218 5.50. 2N2218A 2N2218A 5.50 4.75 N 0.8 75 0.8W. 2N2219A 2N2219A 5.50 4.75 N 0.8 75 0.8W. 2N2219JTX 2N2219JTX .. Tags: k2645 k4005 U664B BC417 mb8719 ZX200 ZX13 ztx504 equivalent ZTX504 ztx384* ZTX109C ZTX109 ZTX108c* ZTX107 ZNA134E ZN449E datasheet abstract.. |
1250.81 Kb |
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