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RG2012N-2151-B-T5 Susumu Co Ltd Fixed Resistor, Thin Film, 0.25W, 2150ohm, 150V, 0.1% +/-Tol, -10,10ppm/Cel, 0805 visit Digikey Buy
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RG2012N-2151-W-T1 Susumu Co Ltd Res,SMT,Metal Film,2.15K Ohms,100WV,.05% +/-Tol,-10,10ppm TC,0805 Case visit Digikey Buy

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2N2151 Datasheet

Part Manufacturer Description PDF Type
2N2151 Microsemi 5 Amp, 100V, Planar, NPN Power Transistors JAN, JANTX Original
2N2151 Microsemi BJT, NPN, Power Transistor, VCB0 150V, IC 2 A Original
2N2151 API Electronics 5 Amp NPN Transistors Scan
2N2151 API Electronics Short form transistor data Scan
2N2151 General Diode Transistor Selection Guide Scan
2N2151 General Semiconductor Low Frequency Silicon Power NPN Transistor Scan
2N2151 Motorola Motorola Semiconductor Datasheet Library Scan
2N2151 N/A Basic Transistor and Cross Reference Specification Scan
2N2151 N/A Transistor Shortform Datasheet & Cross References Scan
2N2151 N/A Shortform Transistor PDF Datasheet Scan
2N2151 N/A GE Transistor Specifications Scan
2N2151 N/A GE Transistor Specifications Scan
2N2151 N/A Catalog Scans - Shortform Datasheet Scan
2N2151 N/A Transistor Replacements Scan
2N2151 N/A Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Scan
2N2151 N/A Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Scan
2N2151 N/A Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Scan
2N2151 N/A Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan
2N2151 N/A Semiconductor Master Cross Reference Guide Scan
2N2151 N/A Shortform Electronic Component Datasheets Scan
Showing first 20 results.

2N2151

Catalog Datasheet MFG & Type PDF Document Tags

2N2150

Abstract: 2N2151 TECHNICAL DATA NPN POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/277 Devices Qualified Level 2N2150 2N2151 JANTX MAXIMUM RATINGS (TC = 250C unless otherwise noted) Ratings Symbol Value Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Base Current , µAdc IEBO 2.0 µAdc ICES 5.0 µAdc 120101 Page 1 of 2 2N2150, 2N2151 JANTX , = 1.0 Adc, VCE = 5.0 Vdc IC = 0.5 Adc, VCE = 5.0 Vdc IC = 0.1 Adc, VCE = 5.0 Vdc 2N2151
Microsemi
Original
1000C

2N2150

Abstract: TYPES 2N2150, 2N2151 N-P-N TRIPLE-DIFFUSED PLANAR SILICON POWER TRANSISTORS 33 03 - I m C , , 2N2151 N-P-N TRIPLE-DIFFUSED PLANAR SILICON POWER TRANSISTORS *ele ctrica l characteristics a t 2 5 °C , AX 80 50 5 2N2151 MIN MAX 80 50 5 50 UNIT V See Note 5 Collector Cutoff Current , T E X A S 75222 P O S T O F F IC E B O X 5 0 1 2 TYPES 2N2150, 2N2151 N-P-N TRIPLE-DIFFUSED , S T O F F IC E B O X 5 0 1 2 TYPES 2N2150, 2N2151 N-P-N TRIPLE-DIFFUSED PLANAR SILICON POWER
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OCR Scan

2N2151

Abstract: 2N2* Central 7516 Central Industrial Drive Riviera Beach, Florida 33404 PHONE: (561) 842-0305 FAX: (561) 845-7813 2N2151 APPLICATIONS: · · Fast Switching High Frequency Switching and Amplifying FEATURES: · · High Reliability Greater Gain Stability 5 Amp, 100V, Planar, NPN Power Transistors , A °C °C °C 2 30 W W 3.33 ° C/W 2N2151 ELECTRICAL CHARACTERISTICS (25° Case , Adc 2N2151 PACKAGE MECHANICAL DATA .185 [4.70] .215 [5.46] .424 [10.77] .437 [11.10] Ø
Microsemi
Original
2N2* Central MSC0942A

c 3076

Abstract: 2N2151 POWER TRANSISTORS 2 Amp, 80V, Planar NPN JAN&JANTX 2N2151 FEATURES â'¢ Meets MIL-S-19500/277 â'¢ Collector-Base Voltage-, up to 150V â'¢ D.C. Collector Current: 2A â'¢ Beta Guaranteed at 3 , â m UNITRODE JAN & JANTX 2N2151 ELECTRICAL SPECIFICATIONS (at 25°C unless noted) Test Symbol Min , JANTX 2N2151 Forward Bias Safe Operating Area 2 5 10 50 80 100 200 Vce â'" COLLECTOR TO EMITTER , ) 326-6509 â'¢ TELEX 95-1064 58 PRINTED IN U.S.A. JAN & JANTX 2N2151 Switching Speed Characteristics
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OCR Scan
c 3076 JANTX2N2151 40VDC

LSE B9

Abstract: LM 3041 POWER TRANSISTORS 2 Amp, 80V, Planar NPN JAN&JANTX 2N2151 FEATURES D E S C R IP T IO N · · · · · Meets MIL-S-19500/277 Collector-Base Voltage: up to 150V D.C. Collector Current: 2A , E C H A N IC A L S P E C IF IC A T IO N S TO-59 2-10 M y UNITRODE JAN & JANTX 2N2151 E , 95-1064 2-11 P R IN T E D IN U S .A JAN & JANTX 2N2151 Forward Bias Safe Operating Area Unclam , 95-1064 2-12 P R IN T E D IN U S A JAN & JANTX 2N2151 Sw itching Speed Characteristics Sw
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OCR Scan
LSE B9 LM 3041 lm 277c

N2150

Abstract: 2n7151 I Ill Ill 120! 140; / I Pulsed (see 4.5.1), I [C m 0.1 A dc, lVCE.5Vdc 2N21511 2N2151 , SPECIFICATIOW OEVIIX , TWASISTOR , NPN , SILICON, TYPES 2N21S0 AND 2N2151 JANTX POh'ER This , ~ f lf. lo Plc2 O.l AdC I , O, vol cage 2N2150 2N2151 I lVdc[ Bias condition v~~ . 80 V dc I i I , / 2h2150 2N2151 / I Fern.ard.current \ transfer ratio / 1, ~ I I I 60; 120/ I I
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Original
N2150 2n7151 cage 11851 vfd S1 DELTA t41l FCABLE11 HIL-S-1950 3/Z77D SO0/277C S-195CW 12N2150

2N2150

Abstract: 2N2151 The documentation and process conversion measures necessary to comply uith this amendment shall be completed by 29 Oct 92 I INCH-POUND I I_I MIL-S-19500/277D AMENDMENT 1 29 July 1992 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, POWER TYPES 2N2150 AND 2N2151 JANTX This amendment forms a part of MIL-S-19500/277D, dated 10 June 1991, and is approved for use by all Departments and Agencies of the Department of Defense. PAGE 8 TABLE II, inspection column, subgroup 5, condition
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OCR Scan

U2T305

Abstract: MIL-S-19500 Unitrode P/N 2N2151 Unitrode P/N UPT115 UPT21I UPT212 UPT213 IJPT214 UPT215 UPT311 UPT312 UPT313 UPT314
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OCR Scan
U2T105 U2T205 U2T305 U2T713 MIL-S-19500 U2T10 2N5157 JANTX UNITRODE TRANSISTORS 2N5660-JAN 2N5661-JAN 2N5662-JAN 2N5653-JAN 2N1016B-JAN 2N1016C-JAN
Abstract: . WPN NPN 2N1725 NPN 2N4003 2N1936 NPN : 2N4004 NPN NPN 2N1937 NPN : 2N4005 2N2151 NPN -
OCR Scan
2N3739 2N656 2N3740 2N656A 2N3741 2N1047

terminals of 2n3055

Abstract: TI1131 toTI1156, 2N1722 to 2N1725, 2N1722A, 2N1724A, 2N2150. 2N2151 2N2987 to 2N2994, 2N3055, 2N3771, 2N3772
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OCR Scan
2N6272 2N6323 2S012 2N122 2N389 T1486 terminals of 2n3055 TI1131 TI-487 TI487 T0-63 2N6271 2N6273 2N6322

2N1718

Abstract: 2N3171 2N1702 2N1718 2N1720 2N1724 2N1724A 2N1725 2N215Û 2N2151 2N2305 2N2632 2N2633 2N2634 2N2655 2N2657 2N2658
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OCR Scan
2N2855 2N2984 2N2995 2N3055C 2N3171 2N3172 2n3198 2n2891 306XC001 306XC092 331XC002 331XC0CI3 333XC0D1 345XC0CI1

2N5333 MOTOROLA

Abstract: 2n5000 Transistors & Diodes 2N2150 2N2151 2N3788 2N3917 2N3918 2N4300 2N4862 2N4863 2N4864 2N4998 2N5000 2N5148
Crystalonics
Original
2N5333 MOTOROLA Motorola diodes 2N3740 motorola 2N3741 MOTOROLA Transistors TRANSISTORS REPLACEMENT MV1403 MV1404 MV1405 2N5150 2N5152 2N5154

a/TO111

Abstract: 2N2856 A P I ELECTRONICS INC ' 00 43 59 2 A P I E L E C T R O N I C S ' INC 5b Ï Ë J 00435^5 0D0DE51 f l 26C 00221 ® ~T ~33~Dt COLLECTOR CURRENT = 5 AMPS NPN TYPES Device No 2N1616 2N1617 2N1618 2N1702 2N2150 2N2151 2N2657 2N2658 2N2849 2N2849-1 2N2849-2 2N2849-3 2N2850 2N2850-1 2N2850-2 2N2850-3 2N2851 2N2851-1 2N2851-2 2N2851-3 2N2852 2N2852-1 2N2852-2 2N2852-3 2N2853 2N2853-1 2N2853-2 2N2853-3 2N2854 2N2854-1 2N2854-2 2N2854-3 2N2855 2N2855-1 2N2855-2 2N2855-3 2N2856 2N2856-] 2N2856-2 2N2856-3
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OCR Scan
a/TO111 2N2877 2N2878 2N2879 2N2880 2N2890

2N2891

Abstract: 2N2106 NPN DEVICE CASE BRE V VCB iAKDOV OLTAGE VCE VN S VEB VCE (V) hF 'c (A) E Min. Max. SAT 'c (A) VOLTA >B (A) GES (Mc VCE (V) IX.) VBE (V) 2N2106 TO-5 60 60 8 10 0.2 12 36 0.2 0.04 5 3 2N2107 TO-5 60 60 8 10 0.2 30 90 0.2 0.04 2 2 2N2108 TO-5 66 60 8 10 0.2 75 200 0.2 0.01 2 2 2N2150 TO-111 125 80 8 5 1 20 60 1 0.1 1.25 2 2N2151 TO-111 125 80 8 5 1 40 120 1 0.1 1.25 2 2N2657 TO-5 80 60 8 2 1 40 120 1 0.1 0.5 2 2N2658 TO-5 100 80 8 2 1 40 120 1 0.1 0.5 2 2N2726 TO-5 200 150 10 10 0.2 30 90 0.2
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OCR Scan
2N2727 2N2779 2N2780 2N2990 2N2811 2N2812 2N2813

2N2115

Abstract: 2N2849-2 EEL ELECTRONICS, INC.\ COLLECTOR CURRENT = 5 AMPS NPN TYPES VCBO VCEO (sus) vebo Volts hFS- %% ft MHz Device No Case Volts Volts Min Max VCE ic Vqe (sat) Vbe (sat) @ ic § IB 2N2150 TO- 125 80 8 20 60 5 1 1.25 2 1 .1 3.33 30 111 2N2151 TO- 125 80 8 40 120 5 1 1.25 2 1 . 1 3.33 30 111 2N2657 TO-5 80 60 8 40 120 2 1 .5 1.5 1 . 1 25 60 2N2658 TO-5 100 80 8 40 120 2 1 .5 1.5 1 . 1 25 60 2N2849 TO-5 100 80 5 100 300 1 1 .4 1.2 1 .02 25 60 2N2849-1 TO-5 100 80
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OCR Scan
2N2115 TO111 package 2N2853- 2N2856-1 UQ43ST2

2N2856

Abstract: .2 Device No 2N2150 2N2151 2N2657 2N2658 2N2849 2N2849-1 2N2849-2 2N2849-3 2N2850 2N2850-1
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OCR Scan
2N287T

TO-59

Abstract: 2N5333 Metal Can Power Case Outlines 0-400 0-345 0 175 nom See notes A and E Collector 10-32 UNF 2A 0 1007 max Pitch dia max stud torque 18in-lbs i electrical contact with the case. Dimensions in inches TO-59 0-352 r.max 0 028 dia 2 leads â'ž_ 0-557 m AH JEDEC TO-66 notes and dimensions are applicable Dimensions in inches TO-66 4 - Case 3 - Collector 11 13 10-74 29 min 1 78 0 Dimensions in mm High Reliability Professional Types Device Type TIP5411 2N5333 2N2150 2N2151 2N4300 2N4998
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OCR Scan
2N4999 2N5001 TO-59 to59 2N3584 NPN npn 2a 2N5147 2N5149 TIP503 TIP505

TO111 package

Abstract: 2N2150 EEL ELECTRONICS, INCA-' 9 COLLECTOR CURRENT = 5 AMPS NPN TYPES VCBO VCEO (sus) vebo Volts hFS- %% Ft MHz Device No Case Volts Volts Min Max VCE ic Vqe (sat) Vbe (sat) @ ic § IB 2N2150 TO- 125 80 8 20 60 5 1 1.25 2 1 .1 3.33 30 111 2N2151 TO- 125 80 8 40 120 5 1 1.25 2 1 . 1 3.33 30 111 2N2657 TO-5 80 60 8 40 120 2 1 .5 1.5 1 . 1 25 60 2N2658 TO-5 100 80 8 40 120 2 1 .5 1.5 1 . 1 25 60 2N2849 TO-5 100 80 5 100 300 1 1 .4 1.2 1 .02 25 60 2N2849-1
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OCR Scan
QQ003R3 Q0435TE

2n2019

Abstract: 2n2018 Ic = t .0 AMPS DEVICE TYPE bvceo PACKAGE VOLTS BV cbo VOLTS BV ebo VOLTS P D@ 100°C WATTS h FE@ Min. Max. AMPS Ic VcE VOLTS VcE(sat) @ Ic I b VOLTS AMPS AMPS fT MHz IcBO @ Vcb /uAMP VOLTS DATA SHEET PG. NO 2N545 2N546 2N547 2N548 2N549 2N550 2N1052 2N1054 2N1055 2N1116 2N1117 2N1252 2N1253 2N1445 2N1700 2N1714 2N1715 2N1716 2N1717 2N1983 2N1984 2N1985 2N2018 2N2019 2N2150 2N2151 2N2987 2N2988 2N2989 2N2990 2N3262 2N3739 2N4000 2N4001 2N4237 2N4238 2N4239 2N4910
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OCR Scan
2N4911 2N4912 2N5660 2N5661 2N5662 2N5663

TO111

Abstract: a/TO111 NPN Transistors O. Microsemi a Data Type Mil Spec Sheet ID IC (A) Vcbo Vceo Vebo VCE(sat) @ IC (V) (V) (V) (V) (mA) (W) 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 HFE min (dB) HFE max (dB) Part Number Microsemi Division Package Outline NPN 2N21S0 2N2151 JAN2N2150 JAN2N2151 JANTX2N2150 JANTX2N2151 JANTXV2N2150 JANTXV2N2151 2N3621 2N3622 2N3629 2N3630 2N3744 2N3747 2N3750 2N3852 2N3853 2N2877
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OCR Scan
TO111 2N3745 2N3748 2N3751 2N2892 2N2893 2N3746

2N3186

Abstract: 8440355 SPACE POWER ELECTRONICS 89C 00101 A4403SS £7^33-0/_ DDDD101 b f~ Hi-Rel PLANAR POWER 5 ARSP NPN TO-5 4W@T =100°C C SPACE P O W E R ELECTRONICS ST DE| TO-66 30W@T, :100°C Breakdown Voltages TYPE 12N2150 2N2151 2N2657 2N2658 2N2850-1 2N2851-1 2N2852-1 2N2853-1 2N2855-1 2N2856-1 2N2877 2N2878 2N2879 2N2880 2N2891 2N2892 2N2893 2N2984 2N2985 2N2986 2N3016 2N3018 2N3418 2N3419 2N3420 2N3421 2N3506 2N3507 2N3619 2N3623 2N3627 2N3675 2N3676 2N3744 2N3745 2N3746
Space Power Electronics
Original
2N3186 2N3749 2N3752 2N3166 2N3173 2N3174 2N3175

2N1052

Abstract: 2N1445 2N1MS 2N201I 2N2019 2N21SO 2N2151 2N2M7 2N29M 2N29M 2N2990 2N32S2 2N4000 2N4001 2N4237
New Jersey Semiconductor
Original
2N54I 2N10S4 2N105S 2N111S 2N12S3 2N171S
Showing first 20 results.