| Fulltext Datasheet Results |
1 - 16 of about 16 for 2N1989 |
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First line: TO-39 Case (Continued) type description vcbo vceo Vebo vcbo (ma) (mA) (mA) (MHz) (PF) (rw) <ns) (dB) *vcer *'ceo *typ **ICES ***'cev 2N1975 AMPL/SWITCH 0.025 1.20 Abstract: .. 2N1989 NPN AMPUSWITCH 100 45 5.0 5.00 50 20 60 30 10 2.00 30 40 20 .. .. .. 2N1990 2N1990 NPN AMPUSWITCH 100 60 3.0 10 75 20 .. 30 10 0.50 2.0 40 20 .. .. .. 2N2017 2N2017 NPN AMPUSWITCH 60 60 6.0 10 30 50 .. Tags: datasheet abstract.. |
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First line: Electrical Characteristics Unless Otherwise Specified) Type VCBO ^CEO Vebo 'cm 'cBO 'ces ^CE/SUT) SEISA7) (pA) 0(V) (MA) 0(V) (mA) (MHz) (mA) 2N1987 2N1988 2N1989 Abstract: .. 30 10 0.6 0.9 30 20 35 20 80 150 10 1.5 1.3 150 2N1988 2N1988 100 45 5 0.6 1 5 50 35 120 30 10 2 1 30 20 2N1989 100 45 5 0.6 1 5 50 20 60 30 10 2 1 30 20 2N1990 2N1990 100 3 0.6 20 30 10 0.5 1 2 2N2049 2N2049 75 50 7 0.8 0.5 0.01 60 100 300 150 10 0.4 .. Tags: datasheet abstract.. |
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First line: TYPE DESCRIPTION VCBO VCEO *VCER VEBO ICBO *ICEO **ICES ***ICEV ****ICER 0.025 5.00 5.00 5.00 5.00 5.00 5.00 5.00 0.10 0.002 1.00 0.50 0.10 0.10 0.10 0.10 0.10 0.50 0.10 1.00 --0.10 0.30 0.20 0.20 -0.50 0.10 0.10 0.10 1.00 1.00 0.10 0.10 --90 -240 -200 --300 -120 --120 --10 0.02 0.05 1,000 1,000 1.2 Abstract: .. 2N1989 NPN AMPL/SWITCH 100 45 5.0 5.00 50 20 60 30 10 2.00 30 40 20 - - - - - - 2N1990 2N1990 NPN AMPL/SWITCH 100 60 3.0 10 75 20 - - 30 10 0.50 2.0 40 20 - - - - - - 2N2017 2N2017 NPN AMPL/SWITCH 60 60 6.0 10 30 50 200 200 10 .. Tags: 2N1975 2N1983 2N1984 2N1985 2N1986 2N1987 2N1988 2N1989 2N1990 2N2017 2N2049 |
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First line: 2N2476 2N2405(L,S) TYPE DESCRIPTION VCBO VCEO *VCER VEBO ICBO (µA) *ICEO **ICES ***ICEV ****ICER 0.025 5.00 5.00 5.00 5.00 5.00 5.00 5.00 0.10 0.002 1.00 0.50 0.10 0.10 0.10 0.10 0.10 0.50 0.10 1.00 --0.10 0.30 0.20 0.20 -0.50 0.10 0.10 0.10 1.00 1.00 0.10 0.10 --90 -240 -200 --300 -120 --120 Abstract: .. 2N1989 NPN AMPL/SWITCH 100 45 5.0 5.00 50 20 60 30 10 2.00 30 40 20 - - - - - -. 2N1990 2N1990 NPN AMPL/SWITCH 100 60 3.0 10 75 20 - - 30 10 0.50 2.0 40 20 - - - - - -. 2N2017 2N2017 NPN AMPL/SWITCH 60 60 6.0 10 30 50 200 200 10 2.00 200 .. Tags: 2N2405(L,S) 2N2801 2N2476 2n2410 2N2303 2N2297 2N2049 2N1975 2N1983 2N1984 2N1985 2N1986 2N1987 2N1988 2N1989 2N1990 2N2017 2N2049 |
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First line: Medium Power Amplifiers Switches TYPE POLA- MAXIMUM RATINGS VCE(sat) COMPLE- RITY CASE VCEO MENTARY (mW) (MHz) (PF) TYPE 2N720A TO-18 0.15 2N721 TO-18 0.15 2N91I TO-18 0.05 2N956 TO-18 0.15 2N1132 TO-39 0.15 Abstract: .. 600 0.3 25 20 80 150 10 1.5 0.15 40 35 - 2N1988 2N1988 N TO-39 TO-39 600 1 45 35 120 30 10 2 0.03 40 20 _ 2N1989 N TO-39 TO-39 600 1 45 20 60 30 10 2 0.03 40 20 - 2N2017 2N2017 N TO-39 TO-39 1000 1 60 50 200 200 10 2 0.2 - - - 2N2049 2N2049 N TO-39 TO-39 800 0.5 50 100 .. Tags: datasheet abstract.. |
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First line: CENTRAL SEMICONDUCTOR 000021S _1989963 CENTRAL SEMICONDUCTOR 00215 METAL SWITCHING GENERAL PURPOSE (Cont'd.) TYPE vce(s)at 'cbo CASE 2n910 .025 to-18 2n911 .025 2n912 .025 to-18 2n956- to-18 2n1052 to-5 Abstract: .. 50 25 5 20 80 150 10 1.5 15 150 40 35 5 30 to-5 2n1988 2n1988 100 45 5 35 120 30 10 2.0 3 30 40 20 5 50 to-5 2n1989 100 45 5 20 60 30 10 2.0 3 30 40 20 5 50 to-5 2n1990 2n1990 60 60 3 20 30 10 0.5 0.2 2 — — — — to-5 2n2017 2n2017 ■60 60 8 .. Tags: datasheet abstract.. |
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First line: CENTRAL SEMICONDUCTOR 1989963 CENTRAL'SEMICONDUCTOR nflTlb3 ODDOS1S 00215 METAL SWITCHING GENERAL PURPOSE (Cont'd.) TYPE VCE(s)at 'CBO CASE 2N910 .025 TO-18 2N911 .025 TO-18 2N912 .025 TO-18 Abstract: .. 50 25 5 20 80 150 10 1.5 15 150 40 35 5 30 TO-5 2N1988 2N1988 100 45 5 35 120 30 10 2.0 3 30 40 20 5 50 TO-5 2N1989 100 45 5 20 60 30 10 2.0 3 30 40 20 5 50 TO-5 2N1990 2N1990 60 60 3 20 30 10 0.5 0.2 2 — — — TO-5 2N2017 2N2017 ■60 60 8 50 200 .. Tags: datasheet abstract.. |
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First line: Medium Power Amplifiers Switches TYPE POLARITY CASE MAXIMUM RATINGS VCE(SAT) (MHz) <pF> COMPLEMENTARY TYPE (mW) VCEO (mA) PN3643 TO-92A 0.22 0.15 PN3644 TO-92A 0.15 PN3645 TO-92A 0.15 PN4355 TO-92A PN4356 TO-92A Abstract: .. 0.3 25 20 80 150 10 1.5 0.15 40 35 — 2N1988 2N1988 N TO-39 TO-39 600 1 45 35 120 30 10 2 0.03 40 20 - 2N1989 N TO-39 TO-39 600 1 45 20 60 30 10 2 0.03 40 20 aTc= 25 C + Typical value †VCER Medium Power Arrtplifiers and Switches .. Tags: datasheet abstract.. |
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First line: 2N2538 2N2650* 2N2240 2N2655* 2N2464 Type: 2N1945 Notes: Polarity: Power Dissipation: 600m VCBO: VCEO: min: max: VCE: hfe: Case Style: TO-205AD/TO-39: Industry Type: 2N1945 Type: 2N1958A Notes: Polarity: Power Dissipation: 600m VCBO: VCEO: min: max: VCE: hfe: Case Style: TO-205AD/TO-39: Industry Typ Abstract: .. STI Type: 2N1989 Notes: Polarity: NPN Power Dissipation: 600m 600m Tj: VCBO: VCEO: 45 hFE min: hFE max: hFE A: VCE: VCE A: hfe: fT: Case Style: TO-205AD TO-205AD /TO-39 TO-39 : Industry Type: 2N1989. STI Type: 2N1990 2N1990 .. Tags: 2N2464 2N2655* 2N2240 2N2650* 2N2538 2N1945 2N1958A 2N1959A 2N1973 2N1974 2N1975 2N1985 2N1986 2N3635DIE 2N1987 2N1988 2N1989 2N1990 2N1991 2N2008 2N2033 2N2034 |
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First line: 2N2440 BSY52 bc140 transistor 2n2270 2n1840 TO-39 METAL-CAN PACKAGE TRANSISTORS (NPN) Maximum Ratings Electrical Characteristics Unless Otherwise Type VCBO vceo Vebo (Sal) (Sal) 'ces Freq (ma) (nriA) (mA) (MA) (pF) (MHz) (mA) (ns) (dB) (MHz) 2N3439 20.000 20.000 10.0 0.50 1.30 2N3742 0.200 3.000 10. Abstract: .. .050 40 50 280 150.000 1.0 0.60 150 2N19W 2N19W 100 45 5 5.000 50 35 120 30.000 10.0 2.00 1.00 30 20 2N1989 100 45 5 5.000 50 20 60 30.000 10.0 2.00 1.00 30 20 2N2270 2N2270 60 45 7 0.050 60 50 135 150.000 10.0 0.90 1.20 150 .. Tags: 2n1840 transistor 2n2270 bc140 BSY52 2N2440 datasheet abstract.. |
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First line: 0258354 ADVANCED SEMICONDUCTOR 00039 SILICON ADVANCED SEMICONDUCTOR 0250354 TRANSISTORS MAXIMUM RATINGS ELECTRICAL ARACTERISTICS DEVICE TYPE POLARITY WATTS AMPS BVcbo BVce BVebo MIN. AMPS *KHZ CASE 2N329A 2N332 2N333 2N334 .386 .150 .150 .150 .050 .025 .025 .025 .003 .001 .001 .001 *500 T039 2N335 2 Abstract: .. 25 25 45 5 5 5 5 70 60 20 20 .001 .150 .150 .001 5 10 10 5 40 40 40 40 T039 T039 T039 T039 T039 T039 T039 T039 2N1989 2N1990 2N1990 2N1991 2N1991 2N2017 2N2017 NPN NPN PNP NPN .600 .600 .600 1.00 1.00 1.00 .500 1.00 100 100 30 60 45 45 20 60 5 3 5 8 10 20 15 50 .. Tags: 2N702 2N3565 2N1505* 2N2040 2N3569 datasheet abstract.. |
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First line: 0258354 ADVANCED SEMICONDUCTOR 00039 SILICON advanced semiconductor GODODBT TRANSISTORS @Tc= MAXIMUM RATINGS ELEC1 rRICAL ARACTERISTICS DEVICE TYPE POLARITY WATTS AMPS BVcbo BVce BVEBO MIN. AMPS *KHZ CASE 2N329A 2N332 2N333 2N334 .386 .150 .150 .150 .050 .025 .025 .025 .003 .001 .001 .001 *500 T039 Abstract: .. 25 25 45 5 5 5 5 70 60 20 20 .001 .150 .150 .001 5 10 10 5 40 40 40 40 T039 T039 T039 T039 T039 T039 T039 T039 2N1989 2N1990 2N1990 2N1991 2N1991 2N2017 2N2017 NPN NPN PNP NPN .600 .600 .600 1.00 1.00 1.00 .500 1.00 100 100 30 60 45 45 20 60 5 3 5 8 10 20 15 50 .. Tags: 2N702 2N3568* 2N2852 2n3568 2N2406* datasheet abstract.. |
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First line: 2N3444 BSW65 bc300 equivalent MM4003 BSV12 Small Signal Transistors TO-39 Case TYPE DESCRIPTION VCBO VCEO *VCER VEBO ICBO (mA) *ICEO **ICES ***ICEV ****ICER 1.00 1.00 0.05 0.01 5.00 1.00 0.10 0.50 0.10 0.20 0.20 1.00 1.00 1.00 1.00 0.10 2.00 0.10 0.10 0.10 2.00 1.00 0.10 0.10 0.10 0.025 0.025 --45 - Abstract: .. 2N1989 NPN AMPL/SWITCH 100 45 5.0 5.00 50 20 60 30 10 2.00 30 40 20 - - - - - - 2N1990 2N1990 NPN AMPL/SWITCH 100 60 3.0 10 75 20 - - 30 10 0.50 2.0 40 20 - - - - - - 2N2017 2N2017 NPN AMPL/SWITCH 60 60 6.0 10 30 50 200 200 10 .. Tags: BSV12 bc300 equivalent BSW65 2N3444 SE7001 pnp for 2n3019 MM421 mm4003* MM4002 MM4001 mm3007 mm3001 datasheet MM3001 BSY56 BSY52 2N656A 2N657A 2N696 2N697A 2N698 2N699B 2N1052 2N1053 2N1054 2N1055 2N1116 2N1117 2N1118 2N1119 |
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First line: 2N5859 2N3720* 2n697a 2N3444 BSW65 Small Signal Transistors TO-39 Case TYPE DESCRIPTION VCBO VCEO *VCER VEBO ICBO *ICEO **ICES ***ICEV ****ICER 1.00 1.00 0.05 0.01 5.00 1.00 0.10 0.50 0.10 0.20 0.20 1.00 1.00 1.00 1.00 0.10 2.00 0.10 0.10 0.10 2.00 1.00 0.10 0.10 0.10 0.025 0.025 --45 --80 --200 2.0 Abstract: .. 2N1989 NPN AMPL/SWITCH 100 45 5.0 5.00 50 20 60 30 10 2.00 30 40 20 - - - - - - 2N1990 2N1990 NPN AMPL/SWITCH 100 60 3.0 10 75 20 - - 30 10 0.50 2.0 40 20 - - - - - - 2N2017 2N2017 NPN AMPL/SWITCH 60 60 6.0 10 30 50 200 200 10 .. Tags: BSW65 2N3444 2n697a 2N3720* 2N5859 2N656A 2N657A 2N696 2N697A 2N698 2N699B 2N1052 2N1053 2N1054 2N1055 2N1116 2N1117 2N1118 2N1119 |
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First line: PN222A bc 7-25 pnp SC3228 BC286 sC3228* CRIMSON SEMICONDUCTOR 15514CHb DODOETB 2514096 CRIMSON SEMICONDUCTOR 00293 "7"- DEVICF TYPE PACKAGE By.CEO BVCBO BVEBO ICBO M'N i-Al 2N1507 ro-5 100-300 2N1566 TO-5 60-200 2NI613 TO-S 40-120 2NI7U TO-5 100-300 Abstract: .. 50 5 500 30 20- 80 10 150 35 40 2N1988 2N1988 NPN TO-5 45 100 5 500 50 35-120 10 30 20 40 2N1989 NPN TO-5 45 100 5 500 50 20- 60 10 30 20 40 2N1990 2N1990 NPN TO-5 60 100 3 500 75 20- 10 30 20 40 2N1991 2N1991 PNP TO-5 20 30 5 500 10 15- 10 150 .. Tags: sC3228* BC286 SC3228 bc 7-25 pnp PN222A datasheet abstract.. |
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First line: BC169B BC63B MPS9681T CS1602B BC286 CRIMSON SEMICONDUCTOR aSlMCHb DDDDET3 2S14096 CRIMSON SEMICONDUCTOR 00293 DEVICE TYPE PACKAGE By.CEO BVCBO BVEBO ICBO i-ai (-a. v<"1 2N1507 ro-5 100-300 2N1566 TO-5 60-200 2N1613 TO-5 40-120 2NI711 TO-5 100-300 Abstract: .. 50 5 500 30 20- 80 10 150 35 40 2N1988 2N1988 NPN TO-5 45 100 5 500 50 35-120 10 30 20 40 2N1989 NPN TO-5 45 100 5 500 50 20- 60 10 30 20 40 2NI990 2NI990 NPN TO-5 60 100 3 500 75 20- 10 30 20 40 2N1991 2N1991 PNP TO-5 20 30 5 500 10 15- 10 150 .. Tags: BC286 CS1602B MPS9681T BC63B BC169B datasheet abstract.. |
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