| Fulltext Datasheet Results |
1 - 21 of about 21 for 2N1975 |
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First line: 2N1838* O-38 CONFIGURAION EMIER BASE COLLECOR 8,50 9,39 Abstract: .. 0.8 0.025 75 75 10 10 1.2 50 15 60 2N1974 2N1974 100 so 7 0.8 0.025 75 35 10 10 1.2 50 15 50 2N1975 100 80 7 0.8 0.025 75 15 10 10 1.2 50 15 40 2N1986 2N1986 50 25 5 0.6 1 5 30 60 60 240 30 150 10 10 0.6 1.5 0.9 1.3 30 150 20 35 38 DIM A B .. Tags: 2N1838* datasheet abstract.. |
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First line: 0043592 ELECTRONICS 00217 _PARAMETER TABLES ELECTRONICS DET| COLLECTOR CURRENT TYPES Device Case vCBO Volts VcEO (sus) Volts VEBO Volts (sat) (sat) 2N1479 TO-5 Abstract: .. 1 1.2 1.8 .1 .01 25 80 2N1975 TO-5 100 60 7 15 10 .1 1.2 1.8 .1 .01 25 80 2N2987 2N2987 TO-5 95 80 7 25 75 5 .2 . 8 1 .2 .02 25 80 2N2988 2N2988 TO-5 155 100 7 25 75 5 .2 .8 1 .2 .02 25 80 2N2989 2N2989 TO-5 95 80 7 60 120 5 .2 .8 1 .2 .02 25 80 2N2990 2N2990 .. Tags: AP1131* datasheet abstract.. |
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First line: 2N1987 2n1983 2N21n* TO-39 Case (Continued) type description vcbo vceo Vebo vcbo (ma) (mA) (mA) (MHz) (PF) (rw) <ns) (dB) *vcer *'ceo *typ **ICES ***'cev 2N1975 AMPL/SWITCH 0.025 1.20 Abstract: .. typ typ typ typ *ICES *'cev min min min *Â cer min max max min max max max max 2N1975 NPN AMPL/SWITCH 100 60 7.0 0.025 75 15 .. 10 10 1.20 50 40 15 .. .. .. 2N1983 2N1983 NPN AMPUSWITCH 50 25 5.0 5.00 30 .. Tags: 2N21n* 2n1983 2N1987 datasheet abstract.. |
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First line: 2n697a Transistors (Coni.) Discrete Devices General Purpose Amplifiers Type Polarity Maximum Ratings Electrical Characteristics Package Ambient Volts Volts Volts VcE(Sat)@lc/lB Min/Max Volts mA/mA 2N497 12/36 200/40 TO-39 2N498 12/36 200/40 TO-39 2N656 30/90 200/40 TO-39 Abstract: .. 140 80 7 40/120 150 2.0 150/15 100 8 TO-39 TO-39 2N1973 2N1973 NPN 800 100 60 7 75/- 10 0.4 10/1 60 15 TO-39 TO-39 2N1975 NPN 800 100 60 7 15/- 10 0.4 10/1 60 15 TO-39 TO-39 2N1986 2N1986 NPN 600 50 25 5 60/240 150 1.5 150/15 40 35 TO-39 TO-39 2N1988 2N1988 .. Tags: 2n697a datasheet abstract.. |
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First line: 0043592 ELECTRONICS 00217 JJ.Q/ PARAMETER TABLES ELECTRONICS 00435=12 0000217 COLLECTOR CURRENT TYPES Device Case vCBO Volts VcEO (sus) Volts VEBO Volts (sat) (sat) 2N1479 TO-5 Abstract: .. 1 1.2 1.8 .1 .01 25 80 2N1975 TO-5 100 60 7 15 10 .1 1.2 1.8 .1 .01 25 80 2N2987 2N2987 TO-5 95 80 7 25 75 5 .2 .8 1 .2 .02 25 80 2N2988 2N2988 TO-5 155 100 7 25 75 5 .2 .8 1 .2 .02 25 80 2N2989 2N2989 TO-5 95 80 7 60 120 5 .2 .8 1 .2 .02 25 80 2N2990 2N2990 .. Tags: datasheet abstract.. |
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First line: 2N3665 SILICON POWER TRANSISTORS CURRENT GAIN SATURATION VOLTAGES TYPE CASE VCBO VCEO VEBO VBE(s) NUMBER TYPE MIN. MAX. SILICON NPIM 2N1252 TO-5 10.0 1.50 1.30 .020 2N1253 TO-5 10.0 1.50 1.30 .020 2N1506 TO-5 28.0 1.50 1.50 .050 Abstract: .. 90 .1 .010 2N1975 TO-5 100 60 7.0 15 10.0 .1 .60 1.50 .1 .010 2N2987 2N2987 TO-5 95 80 7.0 25 75 5.0 .2 .80 1.00 .2 .020 2N2988 2N2988 TO-5 155 100 7.0 25 75 5.0 .2 .80 1.00 .2 .020 2N2989 2N2989 TO-5 95 80 7.0 60 120 5.0 .2 .80 1.00 .. Tags: 2N3665 datasheet abstract.. |
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First line: 2n1983 TYPE DESCRIPTION VCBO VCEO *VCER VEBO ICBO *ICEO **ICES ***ICEV ****ICER 0.025 5.00 5.00 5.00 5.00 5.00 5.00 5.00 0.10 0.002 1.00 0.50 0.10 0.10 0.10 0.10 0.10 0.50 0.10 1.00 --0.10 0.30 0.20 0.20 -0.50 0.10 0.10 0.10 1.00 1.00 0.10 0.10 --90 -240 -200 --300 -120 --120 --10 0.02 0.05 1,000 1, Abstract: .. 2N1975 NPN AMPL/SWITCH 100 60 7.0 0.025 75 15 - - 10 10 1.20 50 40 15 - - - - - - 2N1983 2N1983 NPN AMPL/SWITCH 50 25 5.0 5.00 30 70 240 5.0 5.0 0.25 5.0 40 45 - - - - - - 2N1984 2N1984 NPN AMPL/SWITCH 50 25 5.0 5.00 30 35 120 5.0 .. Tags: 2n1983 2N1975 2N1983 2N1984 2N1985 2N1986 2N1987 2N1988 2N1989 2N1990 2N2017 2N2049 |
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First line: ELECTRONICS, INC. \-7 COLLECTOR CURRENT AMPS TYPES vCBO Volts VCEO (sus> Volts VEBO Volts Device Case (eat) (sat) 2N1252 TO-5 2N1253 TO-5 2N1506 TO-5 2N1506A TO-5 2N1714 TO-5 Abstract: .. 1 1.2 1.8 .1 .01 25 80 2N1975 TO-5 100 60 7 15 10 .1 1.2 1.8 .1 .01 25 80 2N2987 2N2987 TO-5 95 80 7 25 75 5 .2 .8 1 .2 .02 25 80 2N2988 2N2988 TO-5 155 100 7 25 75 5 .2 .8 1 .2 . 02 25 80 80 2N2989 2N2989 TO-5 95 80 7 60 120 5 .2 .8 1 .2 .02 25 2N2990 2N2990 .. Tags: datasheet abstract.. |
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First line: TN2219 Medium Power Amplifiers Switches TYPE POLARITY CASE MAXIMUM RATINGS VCE(SAT) (MHz) <pF> COMPLEMENTARY TYPE (mW) VCEO (mA) PN3643 TO-92A 0.22 0.15 PN3644 TO-92A 0.15 PN3645 TO-92A 0.15 PN4355 TO-92A PN4356 TO-92A Abstract: .. 1 80 †75 - 10 10 1.2 0.05 60 15 - 2N1974 2N1974 N TO-39 TO-39 800 ' 1 80 †35 10 10 1.2 0.05 50 15 — 2N1975 N TO-39 TO-39 800 1 80 15 - 10 10 1.2 0.05 40 15 - 2N1983 2N1983 N TO-39 TO-39 600 1 25 80 240 5 5 0.25 0.055 40 45 - 2N1984 2N1984 N TO-39 TO-39 . 600 1 25 .. Tags: TN2219 datasheet abstract.. |
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First line: 2N1711 MOTOROLA 2n697a BSY39 Transistors (Coni.) Discrete Devices General Purpose Amplifiers Type Polarity Maximum Ratings Electrical Characteristics Package Ambient Volts Volts Volts VcE(Sat)@lc/lB Min/Max Volts mA/mA 2N497 12/36 200/40 TO-39 2N498 12/36 200/40 TO-39 2N656 30/90 200/40 TO-39 Abstract: .. 140 80 7 40/120 150 2.0 150/15 100 8 TO-39 TO-39 2N1973 2N1973 NPN 800 100 60 7 75/- 10 0.4 10/1 60 15 TO-39 TO-39 2N1975 NPN 800 100 60 7 15/- 10 0.4 10/1 60 15 TO-39 TO-39 2N1986 2N1986 NPN 600 50 25 5 60/240 150 1.5 150/15 40 35 TO-39 TO-39 2N1988 2N1988 .. Tags: BSY39 2n697a 2N1711 MOTOROLA datasheet abstract.. |
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First line: 2N2476 2N2405(L,S) TYPE DESCRIPTION VCBO VCEO *VCER VEBO ICBO (µA) *ICEO **ICES ***ICEV ****ICER 0.025 5.00 5.00 5.00 5.00 5.00 5.00 5.00 0.10 0.002 1.00 0.50 0.10 0.10 0.10 0.10 0.10 0.50 0.10 1.00 --0.10 0.30 0.20 0.20 -0.50 0.10 0.10 0.10 1.00 1.00 0.10 0.10 --90 -240 -200 --300 -120 --120 Abstract: .. 2N1975 NPN AMPL/SWITCH 100 60 7.0 0.025 75 15 - - 10 10 1.20 50 40 15 - - - - - -. 2N1983 2N1983 NPN AMPL/SWITCH 50 25 5.0 5.00 30 70 240 5.0 5.0 0.25 5.0 40 45 - - - - - -. 2N1984 2N1984 NPN AMPL/SWITCH 50 25 5.0 5.00 30 35 120 5.0 .. Tags: 2N2405(L,S) 2N2801 2N2476 2n2410 2N2303 2N2297 2N2049 2N1975 2N1983 2N1984 2N1985 2N1986 2N1987 2N1988 2N1989 2N1990 2N2017 2N2049 |
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First line: Medium Power Amplifiers Switches TYPE POLA- MAXIMUM RATINGS VCE(sat) COMPLE- RITY CASE VCEO MENTARY (mW) (MHz) (PF) TYPE 2N720A TO-18 0.15 2N721 TO-18 0.15 2N91I TO-18 0.05 2N956 TO-18 0.15 2N1132 TO-39 0.15 Abstract: .. TO-39 TO-39 800 1 80* 75 - 10 10 1.2 0.05 60 15 - 2N1974 2N1974 N TO-39 TO-39 800 1 80* 35 - 10 10 1.2 0.05 50 15 - 2N1975 N TO-39 TO-39 800 1 80 15 - 10 10 1.2 0.05 40 15 - 2N1983 2N1983 N TO-39 TO-39 600 1 25 80 240 5 5 0.25 0.055 40 45 _ 2N1984 2N1984 N TO-39 TO-39 600 1 .. Tags: datasheet abstract.. |
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First line: 2n1983 2n1574 CENTRAL SEMICONDUCTOR 000021S _1989963 CENTRAL SEMICONDUCTOR 00215 METAL SWITCHING GENERAL PURPOSE (Cont'd.) TYPE vce(s)at 'cbo CASE 2n910 .025 to-18 2n911 .025 2n912 .025 to-18 2n956- to-18 2n1052 to-5 Abstract: .. — 10 10 1.2 5 50 60 15 .025 75 to-5 2n1974 2n1974 100 60 7 35 - 10 10 1.2 5 50 50 15 .025 75 to-5 2n1975 100 60 7 15 — 10 10 1.2 5 50 40 15 .025 75 to-5 2n1983 2n1983 50 25 5 70 240 5 5 .25 .5 5 40 45 5 30 to-5 2n1984 2n1984 50 25 5 35 120 5 5 .25 .. Tags: 2n1574 2n1983 datasheet abstract.. |
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First line: CENTRAL SEMICONDUCTOR 1989963 CENTRAL'SEMICONDUCTOR nflTlb3 ODDOS1S 00215 METAL SWITCHING GENERAL PURPOSE (Cont'd.) TYPE VCE(s)at 'CBO CASE 2N910 .025 TO-18 2N911 .025 TO-18 2N912 .025 TO-18 Abstract: .. — 10 10 1.2 5 50 60 15 .025 75 TO-5 2N1974 2N1974 100 60 7 35 - 10 10 1.2 5 50 50 15 .025 75 TO-5 2N1975 100 60 7 15 _ - 10 10 1.2 5 50 40 15 .025 75 TO-5 2N1983 2N1983 50 25 5 70 240 5 5 .25 .5 5 40 45 5 30 TO-5 2N1984 2N1984 50 25 5 35 120 5 5 .25 .. Tags: datasheet abstract.. |
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First line: 2N3016 SILICON POWER TRANSISTORS CURRENT GAIN SATURATION VOLTAGES TYPE CASE VCBO VCEO VEBO VBE(s) NUMBER TYPE MIN. MAX. SILICON NPIM 2N1252 TO-5 10.0 1.50 1.30 .020 2N1253 TO-5 10.0 1.50 1.30 .020 2N1506 TO-5 28.0 1.50 1.50 .050 Abstract: .. 90 .1 .010 2N1975 TO-5 100 60 7.0 15 10.0 .1 .60 1.50 .1 .010 2N2987 2N2987 TO-5 95 80 7.0 25 75 5.0 .2 .80 1.00 .2 .020 2N2988 2N2988 TO-5 155 100 7.0 25 75 5.0 .2 .80 1.00 .2 .020 2N2989 2N2989 TO-5 95 80 7.0 60 120 5.0 .2 .80 1.00 .. Tags: 2N3016 datasheet abstract.. |
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First line: 2N2220A DATASHEET 2N2538 2N2464* 2N2464 2N2240 Type: 2N1945 Notes: Polarity: Power Dissipation: 600m VCBO: VCEO: min: max: VCE: hfe: Case Style: TO-205AD/TO-39: Industry Type: 2N1945 Type: 2N1958A Notes: Polarity: Power Dissipation: 600m VCBO: VCEO: min: max: VCE: hfe: Case Style: TO-205AD/TO-39: In Abstract: .. STI Type: 2N1975 Notes: Polarity: NPN Power Dissipation: 800m 800m Tj: VCBO: VCEO: 60 hFE min: hFE max: hFE A: VCE: VCE A: hfe: fT: Case Style: TO-205AD TO-205AD /TO-39 TO-39 : Industry Type: 2N1975. STI Type: 2N1985 2N1985 .. Tags: 2N2240 2N2464 2N2464* 2N2538 2N2220A DATASHEET 2N1945 2N1958A 2N1959A 2N1973 2N1974 2N1975 2N1985 2N1986 2N3635DIE 2N1987 2N1988 2N1989 2N1990 2N1991 2N2008 2N2033 2N2034 |
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First line: 0258354 ADVANCED SEMICONDUCTOR 00039 SILICON ADVANCED SEMICONDUCTOR 0250354 TRANSISTORS MAXIMUM RATINGS ELECTRICAL ARACTERISTICS DEVICE TYPE POLARITY WATTS AMPS BVcbo BVce BVebo MIN. AMPS *KHZ CASE 2N329A 2N332 2N333 2N334 .386 .150 .150 .150 .050 .025 .025 .025 .003 .001 .001 .001 *500 T039 2N335 2 Abstract: .. .100 .100 .150 .150 10 10 10 10 90 90 90 50 TÜ39 T039 T039 T039 T039 T039 T039 2N1893A 2N1893A 2N1973 2N1973 2N1974 2N1974 2N1975 NPN NPN NPN NPN .800 .800 .800 .800 .500 .200 .200 .200 140 100 100 100 80 60 60 60 7 7 7 5 40 76 36 18 .150 .001 .001 .. Tags: 2N702 2N3565 2N3569 2N1070 2N3563 datasheet abstract.. |
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First line: 0258354 ADVANCED SEMICONDUCTOR 00039 SILICON advanced semiconductor GODODBT TRANSISTORS @Tc= MAXIMUM RATINGS ELEC1 rRICAL ARACTERISTICS DEVICE TYPE POLARITY WATTS AMPS BVcbo BVce BVEBO MIN. AMPS *KHZ CASE 2N329A 2N332 2N333 2N334 .386 .150 .150 .150 .050 .025 .025 .025 .003 .001 .001 .001 *500 T039 Abstract: .. .100 .100 .150 .150 10 10 10 10 90 90 90 50 1039 T039 T039 T039 T039 T039 T039 2N1893A 2N1893A 2N1973 2N1973 2N1974 2N1974 2N1975 NPN NPN NPN NPN .800 .800 .800 .800 .500 .200 .200 .200 140 100 100 100 80 60 60 60 7 7 7 5 40 76 36 18 .150 .001 .001 .. Tags: 2N3568* 2N2224 2N3306* 2N3563 2N3568 datasheet abstract.. |
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First line: BSY52 bc140 transistor 2n2270 2n1840 2N2440 TO-39 METAL-CAN PACKAGE TRANSISTORS (NPN) Maximum Ratings Electrical Characteristics Unless Otherwise Type VCBO vceo Vebo (Sal) (Sal) 'ces Freq (ma) (nriA) (mA) (MA) (pF) (MHz) (mA) (ns) (dB) (MHz) 2N3439 20.000 20.000 10.0 0.50 1.30 2N3742 0.200 3.000 10. Abstract: .. 2N1975. Ie' 80. 7. 0.025. 75. 15. 10.000. 10.0. 1.20. 50. 15. 40. 2N2243 2N2243 . 120. 80. 7. 0.010. 60. 15 40 30 30 15 120. 500 .. Tags: 2N2440 2n1840 transistor 2n2270 bc140 BSY52 datasheet abstract.. |
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First line: 2N3444 BSV12 BSW65 BFY64 2n1574 Small Signal Transistors TO-39 Case TYPE DESCRIPTION VCBO VCEO *VCER VEBO ICBO (mA) *ICEO **ICES ***ICEV ****ICER 1.00 1.00 0.05 0.01 5.00 1.00 0.10 0.50 0.10 0.20 0.20 1.00 1.00 1.00 1.00 0.10 2.00 0.10 0.10 0.10 2.00 1.00 0.10 0.10 0.10 0.025 0.025 --45 --80 --200 2 Abstract: .. 2N1975 NPN AMPL/SWITCH 100 60 7.0 0.025 75 15 - - 10 10 1.20 50 40 15 - - - - - - 2N1983 2N1983 NPN AMPL/SWITCH 50 25 5.0 5.00 30 70 240 5.0 5.0 0.25 5.0 40 45 - - - - - - 2N1984 2N1984 NPN AMPL/SWITCH 50 25 5.0 5.00 30 35 120 5.0 .. Tags: 2n1574 BFY64 BSW65 BSV12 2N3444 SE7001 pnp for 2n3019 MM421 mm4003* MM4002 MM4001 mm3007 mm3001 datasheet MM3001 BSY56 BSY52 2N656A 2N657A 2N696 2N697A 2N698 2N699B 2N1052 2N1053 2N1054 2N1055 2N1116 2N1117 2N1118 2N1119 |
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First line: BFX98 2n697a 2N3444 BSW65 SE7001 Small Signal Transistors TO-39 Case TYPE DESCRIPTION VCBO VCEO *VCER VEBO ICBO *ICEO **ICES ***ICEV ****ICER 1.00 1.00 0.05 0.01 5.00 1.00 0.10 0.50 0.10 0.20 0.20 1.00 1.00 1.00 1.00 0.10 2.00 0.10 0.10 0.10 2.00 1.00 0.10 0.10 0.10 0.025 0.025 --45 --80 --200 2.00 Abstract: .. 2N1975 NPN AMPL/SWITCH 100 60 7.0 0.025 75 15 - - 10 10 1.20 50 40 15 - - - - - - 2N1983 2N1983 NPN AMPL/SWITCH 50 25 5.0 5.00 30 70 240 5.0 5.0 0.25 5.0 40 45 - - - - - - 2N1984 2N1984 NPN AMPL/SWITCH 50 25 5.0 5.00 30 35 120 5.0 .. Tags: SE7001 BSW65 2N3444 2n697a BFX98 2N656A 2N657A 2N696 2N697A 2N698 2N699B 2N1052 2N1053 2N1054 2N1055 2N1116 2N1117 2N1118 2N1119 |
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