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1 - 41 of about 41 for 2N1889 |
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First line: 2N1889 Dimensions (inches). Abstract: .. 2N1889. Bipolar NPN Device. VCEO = 60V IC = 0.25A. All Semelab hermetically sealed products can be processed in accordance with the requirements of BS, CECC and JAN, JANTX, JANTXV and JANS specifications .. Tags: 2N1889 2N1889 |
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First line: 2N1838* O-38 CONFIGURAION EMIER BASE COLLECOR 8,50 9,39 Abstract: .. 40 150 100 10 1.4 1.5 100 27 2N1840 2N1840 25 15 5 0.6 0.5 0.3 10 10 10 100 150 150 1.4 10 1.4 1.75 150 27 2N1889 100 80 7 0.8 0.01 75 20 35 40 120 0.1 10 150 10 10 10 1.2 5 0.9 1.3 50 150 15 50 50 2N1890 2N1890 100 80 7 0.8 0.01 75 100 .. Tags: 2N1838* datasheet abstract.. |
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First line: 706a SEMELAB 0133107 SULB .^I.W.XV".- -naimiffy-iiTrtim tWlnEr^-T* in.,. lypeNo. Option"'" Polarity Package VcE0 hpE@ VCE/'C Abstract: .. T061 T061 12 5 30-90 15/2 10M 10 '2N1725 2N1725 HI-REL NPN T061 T061 80 5 50-150 15/2 10M 10 '2N1889 SCREEN NPN T039 T039 60 0.25 40-120 10/0.15 50M 0. -2N1890 -2N1890 SCREEN NPN T039 T039 60 0.25 100-300 10/0.15 50M 0. 2N1893 2N1893 SCREEN NPN .. Tags: 706a datasheet abstract.. |
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First line: 0043592 ELECTRONICS 00217 _PARAMETER TABLES ELECTRONICS DET| COLLECTOR CURRENT TYPES Device Case vCBO Volts VcEO (sus) Volts VEBO Volts (sat) (sat) 2N1479 TO-5 Abstract: .. 2 2 1.6 .2 .02 25 80 STUD 2N1889 TO-5 100 60 7 40 120 10 .15 5 1.3 .1 .01 25 80 2N1890 2N1890 TO-5 100 60 7 100 300 10 . 15 5 1.3 .1 .01 25 80 2N1974 2N1974 TO-5 100 60 7 35 10 .1 1.2 1.8 .1 .01 25 80 2N1975 2N1975 TO-5 100 60 7 15 10 .1 1.2 1 .. Tags: AP1131* datasheet abstract.. |
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First line: 2n697a Transistors (Coni.) Discrete Devices General Purpose Amplifiers Type Polarity Maximum Ratings Electrical Characteristics Package Ambient Volts Volts Volts VcE(Sat)@lc/lB Min/Max Volts mA/mA 2N497 12/36 200/40 TO-39 2N498 12/36 200/40 TO-39 2N656 30/90 200/40 TO-39 Abstract: .. 1.0 150/15 70 25 TO-39 TO-39 2N1711B 2N1711B NPN 1000 120 50 7 100/300 150 0.2 150/15 70 10 TO-39 TO-39 2N1889 NPN 800 100 60 7 40/120 150 5.0 150/15 50 15 TO-39 TO-39 2N1890 2N1890 NPN 800 100 60 7 100/300 150 5.0 150/15 60 15 TO-39 TO-39 2N1893 2N1893 .. Tags: 2n697a datasheet abstract.. |
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First line: 2N1256 2N1275* 2n697a 2N1221 2N328A SEMICONDUCTOR TECHNOLOGY fil3b4Sfl DGDD5M2 SILICON TRANSISTORS type Polarity Power Dissipation vCBO vceo (volts) hfe@lc vce(sat.)@ic case (volts) (Min.) (Max.) (mA) (volts) (mA) (MHz) style 2N327A 2N328A 2N329A 2N696 2N696A TO-5 TO-5 TO-5 TO-5 TO-5 2N697 2N697A 2N Abstract: .. 60 1.5 1.5 150 150 150 150 36 30 50 1.0 140 50 60 TO-5 TO-5 TO-5 TO-5 TO-5 2N1711 2N1711 2N1711A 2N1711A 2N1889 2N1890 2N1890 2 N2008 N2008 npn npn npn npn npn 800 1000 800 800 800 200 200 200 200 200 75 75 100 100 175 40 40 60 60 110 100 .. Tags: 2N328A 2N1221 2n697a 2N1275* 2N1256 datasheet abstract.. |
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First line: 0043592 ELECTRONICS 00217 JJ.Q/ PARAMETER TABLES ELECTRONICS 00435=12 0000217 COLLECTOR CURRENT TYPES Device Case vCBO Volts VcEO (sus) Volts VEBO Volts (sat) (sat) 2N1479 TO-5 Abstract: .. 2 2 1.6 .2 .02 25 80 2N1889 TO-5 100 60 7 40 120 10 .15 5 1.3 .1 .01 25 80 2N1890 2N1890 TO-5 100 60 7 100 300 10 .15 5 1.3 .1 .01 25 80 2N1974 2N1974 TO-5 100 60 7 35 10 .1 1.2 1.8 .1 .01 25 80 2N1975 2N1975 TO-5 100 60 7 15 10 .1 1.2 1.8 .1 .. Tags: datasheet abstract.. |
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First line: 2N3665 SILICON POWER TRANSISTORS CURRENT GAIN SATURATION VOLTAGES TYPE CASE VCBO VCEO VEBO VBE(s) NUMBER TYPE MIN. MAX. SILICON NPIM 2N1252 TO-5 10.0 1.50 1.30 .020 2N1253 TO-5 10.0 1.50 1.30 .020 2N1506 TO-5 28.0 1.50 1.50 .050 Abstract: .. 2 2.00 1.60 .2 .020 2N1889 TO-5 100 60 7.0 40 120 10.0 .2 5.00 1.30 .1 .010 2 IM 1890 TO-5 100 60 7.0 40 120 10.0 .2 5.00 1.30 .1 .010 2N1974 2N1974 TO-5 100 60 7.0 35 10.0 â– 1 1.20 .90 .1 .010 2N1975 2N1975 TO-5 100 60 7.0 .. Tags: 2N3665 datasheet abstract.. |
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First line: 2n1116 2n1117 2n697a Small Signal Transistors TO-39 Case TYPE DESCRIPTION VCBO VCEO *VCER VEBO ICBO *ICEO **ICES ***ICEV ****ICER 1.00 1.00 0.05 0.01 5.00 1.00 0.10 0.50 0.10 0.20 0.20 1.00 1.00 1.00 1.00 0.10 2.00 0.10 0.10 0.10 2.00 1.00 0.10 0.10 0.10 0.025 0.025 --45 --80 --200 2.00 2.00 1.50 1. Abstract: .. 2N1889 NPN AMPL/SWITCH 100 60 7.0 0.10 75 40 120 150 10 5.00 150 50 15 - - - - - - 2N1890 2N1890 NPN AMPL/SWITCH 100 60 7.0 0.10 75 100 300 150 10 1.20 50 60 15 - - - - - - 2N1893A 2N1893A NPN AMPL/SWITCH 140 80 7.0 0.10 .. Tags: 2n697a 2n1117 2n1116 2N656A 2N657A 2N696 2N697A 2N698 2N699B 2N1052 2N1053 2N1054 2N1055 2N1116 2N1117 2N1118 2N1119 |
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First line: 2N3680 2N3907 DATASHEET 2C415* 2N3409 2N3907 SEMICONDUCTORS HIGH RELIABILITY APPLICATIONS Abstract: .. TO39 TO39 Bipolar 2N1132 2N1132 2N1507 2N1507 2N1613 2N1613 2N1711 2N1711 , 16-17 2N1889-90, 93 2N1991 2N1991 2N2102 2N2102 2N2192-4 2N2192-4 /A 2N2218-19 2N2218-19 /A 2N2236 2N2236 , 43 /A 2N2326 2N2326 , 29 2N2800 2N2800 2N2848 2N2848 , 90-93 2N2904-05 2N2904-05 /A, 51, 60 2N3007-08 2N3007-08 2N3036 2N3036 , 53 /A .. Tags: 2N3907 2N3409 2C415* 2N3907 DATASHEET 2N3680 V410A TO72 servomotor irff9110 BSX39 BSW66 BSV81* BSV60 BLY48A BLY11 BFY81 datasheet abstract.. |
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First line: ELECTRONICS, INC. \-7 COLLECTOR CURRENT AMPS TYPES vCBO Volts VCEO (sus> Volts VEBO Volts Device Case (eat) (sat) 2N1252 TO-5 2N1253 TO-5 2N1506 TO-5 2N1506A TO-5 2N1714 TO-5 Abstract: .. 2 2 1.6 .2 .02 25 80 STUD 2N1889 TO-5 100 60 7 40 120 10 .15 5 1.3 . 1 . 01 25 80 2N1890 2N1890 TO-5 100 60 7 100 300 10 .15 5 1.3 .1 .01 25 80 2N1974 2N1974 TO-5 100 60 7 35 10 .1 1.2 1.8 .1 .01 25 80 2N1975 2N1975 TO-5 100 60 7 15 10 .1 1.2 1 .. Tags: datasheet abstract.. |
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First line: Silicon Transistors Type Case Maximum Ratings amb. Characteristics VCE(SAT) Pto. Min. Max. Min. Mc/s Max. Microwave TIXS12 Power Source TIXS13 1200t 2N696 Medium Power 2N697 Abstract: .. P 75 50 7 0-5 0-8 150 40 120 50 60 150 15 1-5 2N1711 2N1711 T05 P 75 50 7 10 0-8 150 100 300 50 70 150 15 1-5 2N1889 T05 P 100 60 7 0-5 0-8 150 40 120 50 50 150 15 50 2N1890 2N1890 T05 P 100 60 7 0-5 0-8 150 100 300 50 60 150 15 50 2N1893 2N1893 .. Tags: datasheet abstract.. |
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First line: 2N1711 MOTOROLA 2n697a BSY39 Transistors (Coni.) Discrete Devices General Purpose Amplifiers Type Polarity Maximum Ratings Electrical Characteristics Package Ambient Volts Volts Volts VcE(Sat)@lc/lB Min/Max Volts mA/mA 2N497 12/36 200/40 TO-39 2N498 12/36 200/40 TO-39 2N656 30/90 200/40 TO-39 Abstract: .. 1.0 150/15 70 25 TO-39 TO-39 2N1711B 2N1711B NPN 1000 120 50 7 100/300 150 0.2 150/15 70 10 TO-39 TO-39 2N1889 NPN 800 100 60 7 40/120 150 5.0 150/15 50 15 TO-39 TO-39 2N1890 2N1890 NPN 800 100 60 7 100/300 150 5.0 150/15 60 15 TO-39 TO-39 2N1893 2N1893 .. Tags: BSY39 2n697a 2N1711 MOTOROLA datasheet abstract.. |
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First line: 2n1116 2n1574 2n1117 2n697a Small Signal Transistors TO-39 Case TYPE DESCRIPTION VCBO VCEO *VCER VEBO ICBO (µA) *ICEO **ICES ***ICEV ****ICER 1.00 1.00 0.05 0.01 5.00 1.00 0.10 0.50 0.10 0.20 0.20 1.00 1.00 1.00 1.00 0.10 2.00 0.10 0.10 0.10 2.00 1.00 0.10 0.10 0.10 0.025 0.025 --45 --80 --200 Abstract: .. 2N1889 NPN AMPL/SWITCH 100 60 7.0 0.10 75 40 120 150 10 5.00 150 50 15 - - - - - -. 2N1890 2N1890 NPN AMPL/SWITCH 100 60 7.0 0.10 75 100 300 150 10 1.20 50 60 15 - - - - - -. 2N1893A 2N1893A NPN AMPL/SWITCH 140 80 7.0 0.10 90 40 120 .. Tags: 2n697a 2n1117 2n1116 AMPL 2N1717 2n1574 2n1482 2N1052 2N105* 2N656A 2N657A 2N696 2N697A 2N698 2N699B 2N1052 2N1053 2N1054 2N1055 2N1116 2N1117 2N1118 2N1119 |
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First line: 2n697a 2n696 npn transistor Small Signal itansistors TO-39 Case TYPE description VCBO vceo vebo 'cbo vcbo vce(sat) 'on (J1A) (mA) (mA) (MHz) (PF) (r>s) (ns) (dB) *vcer *'ceo *"icev **"'cer *typ *typ *typ *typ *TYP 2n6s6a AMPL/SWITCH 2.00 2N657A AMPL/SWITCH 2.00 2N696 AMPL/SWITCH 1.00 1. Abstract: .. .. .. 2n1889 NPN AMPUSWITCH 100 60 7.0 0.10 75 40 120 150 10 5.00 150 50 15 .. .. .. 2N1890 2N1890 NPN AMPUSWITCH 100 60 7.0 0.10 75 100 300 150 10 1.20 50 60 15 - — .. 2N1893A 2N1893A NPN AMPUSWITCH 140 80 7.0 0.10 .. Tags: 2n696 npn transistor 2n697a datasheet abstract.. |
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First line: Medium Power Amplifiers Switches TYPE POLA- MAXIMUM RATINGS VCE(sat) COMPLE- RITY CASE VCEO MENTARY (mW) (MHz) (PF) TYPE 2N720A TO-18 0.15 2N721 TO-18 0.15 2N91I TO-18 0.05 2N956 TO-18 0.15 2N1132 TO-39 0.15 Abstract: .. 1000 1 50* 100 300 150 10 1 0.T5 70 25 - 2N171 2N171 IB N TO-39 TO-39 1000 1 55* 100 300 150 10 0.2 0.15 70 10 - 2N1889 N TO-39 TO-39 800 1 60 40 120 150 10 5 0.15 60 15 - 2N1890 2N1890 N TO-39 TO-39 800 1 60 100 300 150 10 5 0.15 60 15 _ 2N1893 2N1893 N TO-39 TO-39 .. Tags: datasheet abstract.. |
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First line: 2n1983 2n1574 CENTRAL SEMICONDUCTOR 000021S _1989963 CENTRAL SEMICONDUCTOR 00215 METAL SWITCHING GENERAL PURPOSE (Cont'd.) TYPE vce(s)at 'cbo CASE 2n910 .025 to-18 2n911 .025 2n912 .025 to-18 2n956- to-18 2n1052 to-5 Abstract: .. 40 120 200 5 2 20 200 16 50 2 60 to-5 2n1717 2n1717 100 100 6 40 120 200- 5 2 20 200 16 50 — — to-5 2n1889 100 60 I 40 120 150 10 5.0 15 150 50 15 .01 75 to-5 2n1890 2n1890 100 60 7 100 300 150 . 10 5.0 . 15 150 60 15 .01 75 to-5 2n1893 2n1893 .. Tags: 2n1574 2n1983 datasheet abstract.. |
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First line: CENTRAL SEMICONDUCTOR 1989963 CENTRAL'SEMICONDUCTOR nflTlb3 ODDOS1S 00215 METAL SWITCHING GENERAL PURPOSE (Cont'd.) TYPE VCE(s)at 'CBO CASE 2N910 .025 TO-18 2N911 .025 TO-18 2N912 .025 TO-18 Abstract: .. 40 120 200 5 2 20 200 16 50 2 60 TO-5 2N1717 2N1717 100 100 6 40 120 200- 5 2 20 200 16 50 — — TO-5 2N1889 100 60 40 120 150 10 5.0 15 150 50 15 .01 75 TO-5 2N1890 2N1890 100 60 7 100 300 150 . 10 5.0 . 15 150 60 15 .01 75 TO-5 2N1893 2N1893 .. Tags: datasheet abstract.. |
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First line: XB412* 2N696 TEXAS INSTRUMENTS 2N1719 Silicon Transistors Type Case Maximum Ratings amb. Characteristics VCE(SAT) Pto. Min. Max. Min. Mc/s Max. Microwave TIXS12 Power Source TIXS13 1200t 2N696 Medium Power 2N697 Abstract: .. P 75 50 7 0-5 0-8 150 40 120 50 60 150 15 1-5 2N1711 2N1711 T05 P 75 50 7 10 0-8 150 100 300 50 70 150 15 1-5 2N1889 T05 P 100 60 7 0-5 0-8 150 40 120 50 50 150 15 50 2N1890 2N1890 T05 P 100 60 7 0-5 0-8 150 100 300 50 60 150 15 50 2N1893 2N1893 .. Tags: 2N1719 2N696 TEXAS INSTRUMENTS XB412* datasheet abstract.. |
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First line: 2N3016 SILICON POWER TRANSISTORS CURRENT GAIN SATURATION VOLTAGES TYPE CASE VCBO VCEO VEBO VBE(s) NUMBER TYPE MIN. MAX. SILICON NPIM 2N1252 TO-5 10.0 1.50 1.30 .020 2N1253 TO-5 10.0 1.50 1.30 .020 2N1506 TO-5 28.0 1.50 1.50 .050 Abstract: .. 2 2.00 1.60 .2 .020 2N1889 TO-5 100 60 7.0 40 120 10.0 .2 5.00 1.30 .1 .010 2 IM 1890 TO-5 100 60 7.0 40 120 10.0 .2 5.00 1.30 .1 .010 2N1974 2N1974 TO-5 100 60 7.0 35 10.0 ■ 1 1.20 .90 .1 .010 2N1975 2N1975 TO-5 100 60 7.0 15 .. Tags: 2N3016 datasheet abstract.. |
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First line: TN2219 Medium Power Amplifiers Switches TYPE POLARITY CASE MAXIMUM RATINGS VCE(SAT) (MHz) <pF> COMPLEMENTARY TYPE (mW) VCEO (mA) PN3643 TO-92A 0.22 0.15 PN3644 TO-92A 0.15 PN3645 TO-92A 0.15 PN4355 TO-92A PN4356 TO-92A Abstract: .. 50* 100 300 150 10 1 0.15 70 25 — 2N1711B 2N1711B N TO-39 TO-39 1000 1 55 †100 300 150 10 0.2 0.15 70 10 — 2N1889 N TO-39 TO-39 800 1 60 40 120 150 10 5 0.15 60 15 - 2N1890 2N1890 N TO-39 TO-39 800 1 60 100 300 150 10 5 0.15 60 15 - 2N1893 2N1893 N TO-39 TO-39 .. Tags: TN2219 datasheet abstract.. |
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First line: 2N2909 2N2645 0134^3 0QQQ13H f^-fl-21 GENERAL PURPOSE MEDIUM SPEED AMPLIFIERS (Cont'd) Maximum Ratings Electrical Characteristics Type Ambient Volts Volts Volts VcE(Sat) Ic/lB Case Min/Max Volts mA/mA 2N2353 2N2195A 2K2353A 2N4383 2K4384 100/500 100/500 0.01 0.01 0.35 0.25 0.25 0.35 0.35 150/15 150/ Abstract: .. /15 100 70 60 80 50 15 25 25 25 20 TO-18 TO-18 TO-5 TO-18 TO-18 TO-5 TO-5 2N2351 2N2351 2N2193A 2N2193A 2K2351A 2K2351A 2N2193B 2N2193B 2N1889 400 800 400 800 800 80 80 80 80 100 50 50 50 50 60 8 8 8 8 7 40/120 40/120 40/120 40/120 40/120 150 150 150 150 .. Tags: 2N2645 2N2909 datasheet abstract.. |
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First line: BSY52 bc140 transistor 2n2270 2n1840 2N2440 TO-39 METAL-CAN PACKAGE TRANSISTORS (NPN) Maximum Ratings Electrical Characteristics Unless Otherwise Type VCBO vceo Vebo (Sal) (Sal) 'ces Freq (ma) (nriA) (mA) (MA) (pF) (MHz) (mA) (ns) (dB) (MHz) 2N3439 20.000 20.000 10.0 0.50 1.30 2N3742 0.200 3.000 10. Abstract: .. 300.000 10.0 2N699 2N699 120 80 5 2.000 60 40 120 150.000 10.0 5.00 1.30 150 20 50 50 2N1889 100 80 7 0.010 75 20 0.100 10.0 1.20 0.90 50 15 50 50 35 10.000 10.0 5.00 1.30 150 40 120 150.000 10.0 2N1890 2N1890 100 80 7 0.010 .. Tags: 2N2440 2n1840 transistor 2n2270 bc140 BSY52 datasheet abstract.. |
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First line: DM01B 2N676 D16P4* ft4017* MA3232 SYMBOLS CODES EXPLAINED SYMBOLS CODES COMMON MORE THAN TECHNICAL SECTION LINE Type Revised Specificaions Non-JEDEC manufacured ouside U'S.A. TYPE Swiching ype, also lised Secion Chopper, also lised Secion Caegory These ypes also included elsewhere oher characerisics Abstract: .. 2N1889 in isolated T05 Packaae; BVC80-100V BVC80-100V . 52 53 54# ASA 1003 ASA1004 ASA1004 BFY21 BFY21 11 11 11 N-PL N-PL N-PL Si Si Si T018 T018 TO 18 L2 PC-.50W max; BVCB0-60V BVCB0-60V ;hFE-5000 hFE-5000 min/lc-10 lc-10 mA; ICB0-10nA ICB0-10nA max. PC-.50W max .. Tags: MA3232 ft4017* D16P4* 2N676 DM01B datasheet abstract.. |
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First line: 2N2694 2N2360 2N3298 jemitronicr Semitronics Corp. metal transistors cont silicon small signal transistors Abstract: .. /300 1 150/15 - 25 70 - - - - 2NI711B 2NI711B NPN TO -5 1000 120 50 7 100/300 0.2 150/15 _ 10 70 - _ - 2N1889 NPN TO 5 800 100 60 7 40/120 5 150/15 - 15 50 - - - - 2N1890 2N1890 NPN TO S 800 100 60 7 100/300 5 150/15 - 15 60 - - - - 2N1893 2N1893 .. Tags: 2N3298 2N2360 2N2694 datasheet abstract.. |
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First line: 2N3444 BSV12 BSW65 BFY64 2n1574 Small Signal Transistors TO-39 Case TYPE DESCRIPTION VCBO VCEO *VCER VEBO ICBO (mA) *ICEO **ICES ***ICEV ****ICER 1.00 1.00 0.05 0.01 5.00 1.00 0.10 0.50 0.10 0.20 0.20 1.00 1.00 1.00 1.00 0.10 2.00 0.10 0.10 0.10 2.00 1.00 0.10 0.10 0.10 0.025 0.025 --45 --80 --200 2 Abstract: .. 2N1889 NPN AMPL/SWITCH 100 60 7.0 0.10 75 40 120 150 10 5.00 150 50 15 - - - - - - 2N1890 2N1890 NPN AMPL/SWITCH 100 60 7.0 0.10 75 100 300 150 10 1.20 50 60 15 - - - - - - 2N1893A 2N1893A NPN AMPL/SWITCH 140 80 7.0 0.10 .. Tags: 2n1574 BFY64 BSW65 BSV12 2N3444 SE7001 pnp for 2n3019 MM421 mm4003* MM4002 MM4001 mm3007 mm3001 datasheet MM3001 BSY56 BSY52 2N656A 2N657A 2N696 2N697A 2N698 2N699B 2N1052 2N1053 2N1054 2N1055 2N1116 2N1117 2N1118 2N1119 |
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First line: DM01B CA3036 L0NA DM02B MA3232 SYMBOLS CODES EXPLAINED Channel SILICON FIELD EFFECT TRANSISTORS )_[BVdss IBVgssJ Idss Vgs=0& Vds>Vp jyi_ GERMANIUM PNP| GERMANIUM NPN110. SILICON PNP|ll. SILICON High Power Transistors 40UC Abstract: .. 2N1889 in isolated T05 Packaae; BVC80-100V BVC80-100V . 52 53 54# ASA 1003 ASA1004 ASA1004 BFY21 BFY21 11 11 11 N-PL N-PL N-PL Si Si Si T018 T018 TO 18 L2 PC-.50W max; BVCB0-60V BVCB0-60V ;hFE-5000 hFE-5000 min/lc-10 lc-10 mA; ICB0-10nA ICB0-10nA max. PC-.50W max .. Tags: MA3232 DM02B L0NA CA3036 DM01B datasheet abstract.. |
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First line: BFX98 2n697a 2N3444 BSW65 SE7001 Small Signal Transistors TO-39 Case TYPE DESCRIPTION VCBO VCEO *VCER VEBO ICBO *ICEO **ICES ***ICEV ****ICER 1.00 1.00 0.05 0.01 5.00 1.00 0.10 0.50 0.10 0.20 0.20 1.00 1.00 1.00 1.00 0.10 2.00 0.10 0.10 0.10 2.00 1.00 0.10 0.10 0.10 0.025 0.025 --45 --80 --200 2.00 Abstract: .. 2N1889 NPN AMPL/SWITCH 100 60 7.0 0.10 75 40 120 150 10 5.00 150 50 15 - - - - - - 2N1890 2N1890 NPN AMPL/SWITCH 100 60 7.0 0.10 75 100 300 150 10 1.20 50 60 15 - - - - - - 2N1893A 2N1893A NPN AMPL/SWITCH 140 80 7.0 0.10 .. Tags: SE7001 BSW65 2N3444 2n697a BFX98 2N656A 2N657A 2N696 2N697A 2N698 2N699B 2N1052 2N1053 2N1054 2N1055 2N1116 2N1117 2N1118 2N1119 |
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First line: 2N2901 2N4131 2N4080 INTEX/ CORP jemiEron Corp, 4SLTSMb T-A7-01 silicon small signal transistors Onice Type Packege Maximum Ratings EltcUical ChaiactetKtics Ambient Volts Volts Volts Min/Man (Sat) IC/IB tOFF Power Gain Abstract: .. 150/15 - 25 70 - - - - - - 2NUIIB NPN TO 5 1000 120 SO 7 100/300 0.2 150/15 10 70 _ _ •- - - 2N1889 NPN TO 5 800 100 60 7 40/120 5 150/15 - 15 50 - - - - - - 2N1890 2N1890 NPN TO 5 800 100 60 7 100/300 S 150/15 - IS 60 - - - - - - 2NI893 2NI893 .. Tags: 2N4080 2N4131 2N2901 datasheet abstract.. |
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First line: BVEBO-15V GW 9n ft4017* CA3036 BF123 SYMBOLS CODES EXPLAINED TYPE CROSS-INDEX TECHNICAL SECTIONS Indicators separate manufacturers producing same type number (non-JEDEC) whose characteristics same. This manufacturer-identifying symbol (assigned D.A.T.A.) integral part type number Type Cross Index, T Abstract: .. 2N1889 in isolated T05 Packaae; BVC80-100V BVC80-100V . 52 53 54# ASA 1003 ASA1004 ASA1004 BFY21 BFY21 11 11 11 N-PL N-PL N-PL Si Si Si T018 T018 TO 18 L2 PC-.50W max; BVCB0-60V BVCB0-60V ;hFE-5000 hFE-5000 min/lc-10 lc-10 mA; ICB0-10nA ICB0-10nA max. PC-.50W max .. Tags: BF123 CA3036 ft4017* GW 9n BVEBO-15V datasheet abstract.. |
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First line: CA3036 NS1000 n SYMBOLS CODES EXPLAINED TYPE CROSS-INDEX TECHNICAL SECTIONS Indicators separate manufacturers producing same type number (non-JEDEC) whose characteristics same. This manufacturer-identifying symbol (assigned D.A.T.A.) integral part type number Type Cross Index, Technical Data Section Abstract: .. 2N1889 in isolated T05 Packaae; BVC80-100V BVC80-100V . 52 53 54# ASA 1003 ASA1004 ASA1004 BFY21 BFY21 11 11 11 N-PL N-PL N-PL Si Si Si T018 T018 TO 18 L2 PC-.50W max; BVCB0-60V BVCB0-60V ;hFE-5000 hFE-5000 min/lc-10 lc-10 mA; ICB0-10nA ICB0-10nA max. PC-.50W max .. Tags: NS1000 n CA3036 datasheet abstract.. |
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First line: FV918 CA3036 L14B 2SC634 DM02B SYMBOLS CODES EXPLAINED TYPE CROSS-INDEX TECHNICAL SECTIONS Indicators separate manufacturers producing same type number (non-JEDEC) whose characteristics same. This manufacturer-identifying symbol (assigned D.A.T.A.) integral part type number Type Cross Index, Technic Abstract: .. 2N1889 in isolated T05 Packaae; BVC80-100V BVC80-100V . 52 53 54# ASA 1003 ASA1004 ASA1004 BFY21 BFY21 11 11 11 N-PL N-PL N-PL Si Si Si T018 T018 TO 18 L2 PC-.50W max; BVCB0-60V BVCB0-60V ;hFE-5000 hFE-5000 min/lc-10 lc-10 mA; ICB0-10nA ICB0-10nA max. PC-.50W max .. Tags: DM02B 2SC634 L14B CA3036 FV918 datasheet abstract.. |
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First line: p1027 2N3113 BFX82 CA3036 SYMBOLS CODES EXPLAINED Channel SILICON FIELD EFFECT TRANSISTORS )_[BVdss IBVgssJ Idss Vgs=0& Vds>Vp jyi_ GERMANIUM PNP| GERMANIUM NPN110. SILICON PNP|ll. SILICON High Power Transistors 40UC Abstract: .. 2N1889 in isolated T05 Packaae; BVC80-100V BVC80-100V . 52 53 54# ASA 1003 ASA1004 ASA1004 BFY21 BFY21 11 11 11 N-PL N-PL N-PL Si Si Si T018 T018 TO 18 L2 PC-.50W max; BVCB0-60V BVCB0-60V ;hFE-5000 hFE-5000 min/lc-10 lc-10 mA; ICB0-10nA ICB0-10nA max. PC-.50W max .. Tags: CA3036 BFX82 2N3113 p1027 datasheet abstract.. |
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First line: CA3036 SYMBOLS CODES EXPLAINED TYPE CROSS-INDEX TECHNICAL SECTIONS Indicators separate manufacturers producing same type number (non-JEDEC) whose characteristics same. This manufacturer-identifying symbol (assigned D.A.T.A.) integral part type number Type Cross Index, Technical Data Sections) avoid Abstract: .. 2N1889 in isolated T05 Packaae; BVC80-100V BVC80-100V . 52 53 54# ASA 1003 ASA1004 ASA1004 BFY21 BFY21 11 11 11 N-PL N-PL N-PL Si Si Si T018 T018 TO 18 L2 PC-.50W max; BVCB0-60V BVCB0-60V ;hFE-5000 hFE-5000 min/lc-10 lc-10 mA; ICB0-10nA ICB0-10nA max. PC-.50W max .. Tags: CA3036 datasheet abstract.. |
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First line: CA3036 SYMBOLS CODES EXPLAINED TYPE CROSS-INDEX TECHNICAL SECTIONS Indicators separate manufacturers producing same type number (non-JEDEC) whose characteristics same. This manufacturer-identifying symbol (assigned D.A.T.A.) integral part type number Type Cross Index, Technical Data Sections) avoid Abstract: .. 2N1889 in isolated T05 Packaae; BVC80-100V BVC80-100V . 52 53 54# ASA 1003 ASA1004 ASA1004 BFY21 BFY21 11 11 11 N-PL N-PL N-PL Si Si Si T018 T018 TO 18 L2 PC-.50W max; BVCB0-60V BVCB0-60V ;hFE-5000 hFE-5000 min/lc-10 lc-10 mA; ICB0-10nA ICB0-10nA max. PC-.50W max .. Tags: CA3036 datasheet abstract.. |
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First line: 2N905 ST25A* CA3036 ST25A 2N904 SYMBOLS CODES EXPLAINED TYPE CROSS-INDEX TECHNICAL SECTIONS Indicators separate manufacturers producing same type number (non-JEDEC) whose characteristics same. This manufacturer-identifying symbol (assigned D.A.T.A.) integral part type number Type Cross Index, Techni Abstract: .. 2N1889 in isolated T05 Packaae; BVC80-100V BVC80-100V . 52 53 54# ASA 1003 ASA1004 ASA1004 BFY21 BFY21 11 11 11 N-PL N-PL N-PL Si Si Si T018 T018 TO 18 L2 PC-.50W max; BVCB0-60V BVCB0-60V ;hFE-5000 hFE-5000 min/lc-10 lc-10 mA; ICB0-10nA ICB0-10nA max. PC-.50W max .. Tags: 2N904 ST25A CA3036 ST25A* 2N905 datasheet abstract.. |
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First line: CA3036 2sa525 SYMBOLS CODES EXPLAINED TYPE CROSS-INDEX TECHNICAL SECTIONS Indicators separate manufacturers producing same type number (non-JEDEC) whose characteristics same. This manufacturer-identifying symbol (assigned D.A.T.A.) integral part type number Type Cross Index, Technical Data Sections) Abstract: .. 2N1889 in isolated T05 Packaae; BVC80-100V BVC80-100V . 52 53 54# ASA 1003 ASA1004 ASA1004 BFY21 BFY21 11 11 11 N-PL N-PL N-PL Si Si Si T018 T018 TO 18 L2 PC-.50W max; BVCB0-60V BVCB0-60V ;hFE-5000 hFE-5000 min/lc-10 lc-10 mA; ICB0-10nA ICB0-10nA max. PC-.50W max .. Tags: 2sa525 CA3036 datasheet abstract.. |
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First line: ft4017* CA3036 SYMBOLS CODES EXPLAINED Channel SILICON FIELD EFFECT TRANSISTORS )_[BVdss IBVgssJ Idss Vgs=0& Vds>Vp jyi_ GERMANIUM PNP| GERMANIUM NPN110. SILICON PNP|ll. SILICON High Power Transistors 40UC Abstract: .. 2N1889 in isolated T05 Packaae; BVC80-100V BVC80-100V . 52 53 54# ASA 1003 ASA1004 ASA1004 BFY21 BFY21 11 11 11 N-PL N-PL N-PL Si Si Si T018 T018 TO 18 L2 PC-.50W max; BVCB0-60V BVCB0-60V ;hFE-5000 hFE-5000 min/lc-10 lc-10 mA; ICB0-10nA ICB0-10nA max. PC-.50W max .. Tags: CA3036 ft4017* datasheet abstract.. |
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First line: BC286 ISO 8015 SC3228 sc413 sC3228* CRIMSON SEMICONDUCTOR 15514CHb DODOETB 2514096 CRIMSON SEMICONDUCTOR 00293 "7"- DEVICF TYPE PACKAGE By.CEO BVCBO BVEBO ICBO M'N i-Al 2N1507 ro-5 100-300 2N1566 TO-5 60-200 2NI613 TO-S 40-120 2NI7U TO-5 100-300 Abstract: .. 75 7 10 60 40-120 10 150 25 60 12 2NI7U NPN TO-5 50 75 7 10 60 100-300 10 150 25 70 8 2N1889 NPN TO-5 60 100 7 10 75 40-120 10 150 15 50 2N1890 2N1890 NPN TO 5 60 100 7 10 75 100-300 10 150 15 60 2N1893 2N1893 NPN ro 5 80 120 7 10 90 40 .. Tags: sC3228* sc413 SC3228 ISO 8015 BC286 datasheet abstract.. |
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First line: REGULATOR IC LM7815 LM7805 TO92 BD124 IP238K lm1083* PRODUCT 2C415 2C425 2C444 2C746 2N1131L 2N1132 2N1132CSM 2N1132DCSM 2N1208 2N1209 2N1482 2N1483 2N1483A 2N1484A 2N1485 2N1485A 2N1486 2N1486A 2N1613 2N1613L 2N1616 2N1617 2N1618 2N1711 2N1717 2N1721 2N1722 2N1724 2N1724A 2N1889 2N1890 2N1893 2N189 Abstract: .. 2N1889 NPN TO39 TO39 TO205AD TO205AD 60V 0.25A 40 120 10V / 150mA 150mA 50MHz 50MHz 0.8W 2N1890 2N1890 NPN TO39 TO39 TO205AD TO205AD 60V 0.25A 100 300 10V / 150mA 150mA 50MHz 50MHz 0.8W 2N1893 2N1893 NPN TO39 TO39 TO205AD TO205AD 80V 0.5A 30 - 5V / 1mA 50MHz 50MHz 0.8W 2N1893CSM 2N1893CSM .. Tags: lm1083* IP238K BD124 LM7805 TO92 REGULATOR IC LM7815 2N1131L 2N1132 2N1132CSM 2N1132DCSM 2N1208 2N1209 2N1482 2N1483 2N1483A 2N1484A 2N1485 2N1485A 2N1486 2N1486A 2N1613 2N1613L 2N1616 2N1617 2N1618 2N1711 2N1717 2N1721 2N1722 2N1724 2N1724A 2N1889 2N1890 2N1893 2N1893CSM 2N1893DCSM 2N1893X 2N2060 2N2060A |
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First line: 2n3211 2N3211* D0DD300 BC63B BC286 CRIMSON SEMICONDUCTOR aSlMCHb DDDDET3 2S14096 CRIMSON SEMICONDUCTOR 00293 DEVICE TYPE PACKAGE By.CEO BVCBO BVEBO ICBO i-ai (-a. v<"1 2N1507 ro-5 100-300 2N1566 TO-5 60-200 2N1613 TO-5 40-120 2NI711 TO-5 100-300 Abstract: .. 75 7 10 60 40-120 10 150 25 60 12 2NI711 2NI711 NPN TO-5 50 75 7 10 60 100-300 10 150 25 70 8 2N1889 NPN TO-5 60 100 7 10 75 40-120 10 150 15 50 2N1890 2N1890 NPN TO 5 60 100 7 10 75 100-300 10 150 15 60 2N1893 2N1893 NPN TO 5 80 120 7 10 90 .. Tags: BC286 BC63B D0DD300 2N3211* 2n3211 datasheet abstract.. |
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