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Part Manufacturer Description PDF & SAMPLES
RG2012N-123-D-T5 Susumu Co Ltd RES,SMT,THIN FILM,12K OHMS,100WV,.5% +/-TOL,-10,10PPM TC,0805 CASE
RG2012N-123-W-T1 Susumu Co Ltd RESISTOR, METAL FILM, 0.125W, 0.05%, 10ppm, 12000ohm, SURFACE MOUNT, 0805, CHIP, ROHS COMPLIANT
RG2012N-123-W-T5 Susumu Co Ltd RES,SMT,THIN FILM,12K OHMS,100WV,.05% +/-TOL,-10,10PPM TC,0805 CASE
RG2012N-123-B-T5 Susumu Co Ltd RES,SMT,THIN FILM,12K OHMS,100WV,.1% +/-TOL,-10,10PPM TC,0805 CASE
PKX007A0X43-SRZ GE Critical Power 7A Analog PicoDLynxIITM: Non-Isolated DC-DC Power Module, 4.5Vdc –14.4Vdc input; 0.6Vdc to 5.5Vdc output; 7A Output Current
ESTW015A0F41-SZ GE Critical Power ESTW015A0F Series (Eighth-Brick) DC-DC Converter Power Module, 36–75Vdc Input; 3.3Vdc Output; 15A Output Current

2N123 (GE)

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: 2N123 Transistors Ge PNP Lo-Pwr BJT Military/High-RelN V(BR)CEO (V)15 V(BR)CBO (V)20 I(C) Max. (A)125m Absolute Max. Power Diss. (W)150m Maximum Operating Temp (øC)85þ I(CBO) Max. (A)2.0u @V(CBO) (V) (Test Condition)20 h(FE) Min. Current gain.30 h(FE) Max. Current gain.150 @I(C) (A) (Test Condition)10m @V(CE) (V) (Test Condition)1.0 h(fe) Min. SS Current gain. @I(C) (A) (Test Condition) @V(CE) (V) (Test Condition) @Freq. (Hz) (Test Condition) f(T) Min. (Hz) Transition Freq8.0M¦ @I(C American Microsemiconductor
Original
Abstract: Product Semicoa TeledynCrys 2N122 PPC Product 2N123 GnrlElec/GE Inti Diode 2N123/5 Part Number Short Form Catalog
Original
Newmarket Transistors sgs-ates transistors 2G108 2AC128-01 2BD124 2N174 RCA ST3042 ST3043 3N120 3N121 2N332 2N333
Abstract: 2N120 N5 TEC.Til 2N123 P9 ETC.ITC.GE 2N123/5 P58 SYL 2N124 N4 ETC 2N125 N5 ETC 2N126 N5 , 3 .2N123/5. 2N215,2N217,2N270 2 N 4 5 . 2 N 5 9 . 2 N 5 9 A »2 N 5 9 B ♦ 2 N 6 0 ♦ 2 N 6 0 A -
OCR Scan
2N60B 2N60C 2N277 N1702 L204A 2SA63 2N390A 2SB311 2N34A 2N43A 2N44A 2N59A 2N59B 2N59C
Abstract: T01 A A 13# 14 15# 2G396Ã 2N123/5t 64T1 150m 150m 150m 8.0M 8.0M 8.0M 2.5m 1.6m #J #s 30 20 30 20 , 1.0 0 10m 90 4.0 1 2p 140nt P-FA Gp 85J u9 15 2N123/5 8.00M 450n 150m 5.0 1.0m 65 t 15D P-A Gp -
OCR Scan
SFT308 2N1103 2SC167 2SC166 CK26A 65T1 PNP GE 2N3602 2N3603 2N3604 USAF501ES001M JAN2N3789 JAN2N3790
Abstract: 1.0 0 10m 90 4.0 1 2p 140nt P-FA Gp 85J u9 15 2N123/5 8.00M 450n 150m 5.0 1.0m 65 t 15D P-A Gp -
OCR Scan
2n3604 transistor 2SC5220 2SC5240 2sc5250 transistor 2SA50 2N2161 BUY56-6 BUY72-4 BUY72-6 BUY72-10
Abstract: u9 15 2N123/5 8.00M 450n 150m 5.0 1.0m 65 t 15D P-A Gp 85S TO 5 16 2N815 8.00M 600nt 400nt -
OCR Scan
SF.T298 500NT 2sa210 pnp 2g605 SCC421 2n1607 NPN110
Abstract: T01 A A 13# 14 15# 2G396Ã 2N123/5t 64T1 150m 150m 150m 8.0M 8.0M 8.0M 2.5m 1.6m #J #s 30 20 30 20 -
OCR Scan
GT123 2N2625 SFT307 2N2209 7350-a 2N2928 SDT7762 SDT7763 SDT7764 35OP0 SDT7765 SDT7766
Abstract: 1.0 0 10m 90 4.0 1 2p 140nt P-FA Gp 85J u9 15 2N123/5 8.00M 450n 150m 5.0 1.0m 65 t 15D P-A Gp -
OCR Scan
ge 142 GET113 2N25 2SB450 SFT121 SFT142
Abstract: u9 15 2N123/5 8.00M 450n 150m 5.0 1.0m 65 t 15D P-A Gp 85S TO 5 16 2N815 8.00M 600nt 400nt -
OCR Scan
2SC287 2N709 ST1694 PMT222 NS075 LM 230N
Abstract: 1.0 0 10m 90 4.0 1 2p 140nt P-FA Gp 85J u9 15 2N123/5 8.00M 450n 150m 5.0 1.0m 65 t 15D P-A Gp -
OCR Scan
5U100 MSP90 028A5 BLY95 B3617 B3541
Abstract: u9 15 2N123/5 8.00M 450n 150m 5.0 1.0m 65 t 15D P-A Gp 85S TO 5 16 2N815 8.00M 600nt 400nt -
OCR Scan
2N5017 2SD2350 CP405 1711-1602 MHT5907 MHT5908
Abstract: 1.0 0 10m 90 4.0 1 2p 140nt P-FA Gp 85J u9 15 2N123/5 8.00M 450n 150m 5.0 1.0m 65 t 15D P-A Gp -
OCR Scan
OC169 transistor 2SA92 2SA471 2SA472 2SA236 2SA237
Abstract: 1.0 0 10m 90 4.0 1 2p 140nt P-FA Gp 85J u9 15 2N123/5 8.00M 450n 150m 5.0 1.0m 65 t 15D P-A Gp -
OCR Scan
2SC102 transistor 2sc102 2N2902 TK30556 1763-0625 TK30560
Abstract: 1.0 0 10m 90 4.0 1 2p 140nt P-FA Gp 85J u9 15 2N123/5 8.00M 450n 150m 5.0 1.0m 65 t 15D P-A Gp -
OCR Scan
NKT102 3. GERMANIUM npn 2T73 2sc85 2SC78 2SC77
Abstract: u9 15 2N123/5 8.00M 450n 150m 5.0 1.0m 65 t 15D P-A Gp 85S TO 5 16 2N815 8.00M 600nt 400nt -
OCR Scan
2SD100 2SA210 2n826 2N2426 GT1609 GT1608
Abstract: 1.0 0 10m 90 4.0 1 2p 140nt P-FA Gp 85J u9 15 2N123/5 8.00M 450n 150m 5.0 1.0m 65 t 15D P-A Gp -
OCR Scan
NKT 275 transistor 1401-0405 2N5577 2N5579 2SD223 MD38
Abstract: 1.0 0 10m 90 4.0 1 2p 140nt P-FA Gp 85J u9 15 2N123/5 8.00M 450n 150m 5.0 1.0m 65 t 15D P-A Gp -
OCR Scan
2N1077 2N1074 2N1076 BF208 2sc196 2N1075
Abstract: 1.0 0 10m 90 4.0 1 2p 140nt P-FA Gp 85J u9 15 2N123/5 8.00M 450n 150m 5.0 1.0m 65 t 15D P-A Gp -
OCR Scan
A608 transistor pnp 2SC632 2SC631 FV918 2N1082 FK918
Abstract: 1.0 0 10m 90 4.0 1 2p 140nt P-FA Gp 85J u9 15 2N123/5 8.00M 450n 150m 5.0 1.0m 65 t 15D P-A Gp -
OCR Scan
transistor b1154 B1154 10PE1 ASY13-2 2N2962 GET116
Abstract: 85J u9 15 2N123/5 8.00M 450n 150m 5.0 1.0m 65 t 15D P-A Gp 85S TO 5 16 2N815 8.00M 600nt -
OCR Scan
DTS108 2SC5250 2sd222 DTS103 DTS106 L30C
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