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Part Manufacturer Description Datasheet BUY
ISL28213FHZ-T7A Intersil Corporation Dual General Purpose Micropower, RRIO Operational Amplifier; MSOP8, SOIC8, SOT8; Temp Range: -40° to 125°C visit Intersil Buy
ISL28213FHZ-T7 Intersil Corporation Dual General Purpose Micropower, RRIO Operational Amplifier; MSOP8, SOIC8, SOT8; Temp Range: -40° to 125°C visit Intersil Buy
ISL28134IBZ Intersil Corporation 5V Ultra Low Noise, Zero Drift Rail-to-Rail Precision Op Amp; SOIC8, SOT5; Temp Range: See Datasheet visit Intersil Buy
ISL28236FUZ-T7 Intersil Corporation 5MHz, Dual Precision Rail-to-Rail Input-Output (RRIO) Op Amp; MSOP8, SOIC8; Temp Range: -40° to 125°C visit Intersil Buy
ISL6363IRTZ Intersil Corporation Multiphase PWM Regulator for VR12™ Desktop CPUs; TQFN48; Temp Range: See Datasheet visit Intersil Buy
ISL32495EIUZ Intersil Corporation ±60V Fault Protected, 5V, RS-485/RS-422 Transceivers with ±25V CMR and ESD Protection; MSOP8, SOIC8; Temp Range: -40° to 85°C visit Intersil Buy

2N123 (GE)

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: 2N123 Transistors Ge PNP Lo-Pwr BJT Military/High-RelN V(BR)CEO (V)15 V(BR)CBO (V)20 I(C) Max. (A)125m Absolute Max. Power Diss. (W)150m Maximum Operating Temp (øC)85þ I(CBO) Max. (A)2.0u @V(CBO) (V) (Test Condition)20 h(FE) Min. Current gain.30 h(FE) Max. Current gain.150 @I(C) (A) (Test Condition)10m @V(CE) (V) (Test Condition)1.0 h(fe) Min. SS Current gain. @I(C) (A) (Test Condition) @V(CE) (V) (Test Condition) @Freq. (Hz) (Test Condition) f(T) Min. (Hz) Transition Freq8.0M¦ @I(C American Microsemiconductor
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Newmarket Transistors

Abstract: sgs-ates transistors Product Semicoa TeledynCrys 2N122 PPC Product 2N123 GnrlElec/GE Inti Diode 2N123/5 Part Number
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Newmarket Transistors sgs-ates transistors 2G108 2N174 RCA 2AC128-01 2BD124 ST3042 ST3043 3N120 3N121 2N332 2N333

N1702

Abstract: 2N277 2N120 N5 TEC.Til 2N123 P9 ETC.ITC.GE 2N123/5 P58 SYL 2N124 N4 ETC 2N125 N5 ETC 2N126 N5 , 3 .2N123/5. 2N215,2N217,2N270 2 N 4 5 . 2 N 5 9 . 2 N 5 9 A »2 N 5 9 B ♦ 2 N 6 0 ♦ 2 N 6 0 A
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2N60C N1702 2N277 2N390A 2SA63 L204A TFK 544 2N34A 2N43A 2N44A 2N59A 2N59B 2N59C

SFT308

Abstract: 2N123 T01 A A 13# 14 15# 2G396Ã 2N123/5t 64T1 150m 150m 150m 8.0M 8.0M 8.0M 2.5m 1.6m #J #s 30 20 30 20 , 1.0 0 10m 90 4.0 1 2p 140nt P-FA Gp 85J u9 15 2N123/5 8.00M 450n 150m 5.0 1.0m 65 t 15D P-A Gp
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SFT308 2N1103 2SC166 2SC167 2G302 2G395 2N3602 2N3603 2N3604 USAF501ES001M JAN2N3789 JAN2N3790

2n3604 transistor

Abstract: 2SC5220 1.0 0 10m 90 4.0 1 2p 140nt P-FA Gp 85J u9 15 2N123/5 8.00M 450n 150m 5.0 1.0m 65 t 15D P-A Gp
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2n3604 transistor 2SC5220 2SC5240 2sc5250 transistor CK26A 2N1174 BUY56-6 BUY72-4 BUY72-6 BUY72-10

2N3604

Abstract: SF.T298 u9 15 2N123/5 8.00M 450n 150m 5.0 1.0m 65 t 15D P-A Gp 85S TO 5 16 2N815 8.00M 600nt 400nt
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SF.T298 2N2161 2sa210 pnp SCC421 2n1607 2g605 NPN110

SFT308

Abstract: SFT307 T01 A A 13# 14 15# 2G396Ã 2N123/5t 64T1 150m 150m 150m 8.0M 8.0M 8.0M 2.5m 1.6m #J #s 30 20 30 20
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GT123 SFT307 2N2625 2N2209 2N2928 7350-a SDT7762 SDT7763 SDT7764 35OP0 SDT7765 SDT7766

GET113

Abstract: 2SB450 1.0 0 10m 90 4.0 1 2p 140nt P-FA Gp 85J u9 15 2N123/5 8.00M 450n 150m 5.0 1.0m 65 t 15D P-A Gp
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GET113 2SB450 2N25 ge 142 2g30 transistor 2n110

2N1103

Abstract: 2SC166 u9 15 2N123/5 8.00M 450n 150m 5.0 1.0m 65 t 15D P-A Gp 85S TO 5 16 2N815 8.00M 600nt 400nt
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2SC287 LM 230N transistor 2sc640 NS075 bc131c ST1694

5U100

Abstract: 2SC5220 1.0 0 10m 90 4.0 1 2p 140nt P-FA Gp 85J u9 15 2N123/5 8.00M 450n 150m 5.0 1.0m 65 t 15D P-A Gp
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5U100 MSP90 028A5 BLY95 B3617 S708

2SD2350

Abstract: 2N5017 u9 15 2N123/5 8.00M 450n 150m 5.0 1.0m 65 t 15D P-A Gp 85S TO 5 16 2N815 8.00M 600nt 400nt
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OCR Scan
2SD2350 2N5017 CP405 MHT5905 MHT5906 MHT5907

2n3604 transistor

Abstract: 2SC5220 1.0 0 10m 90 4.0 1 2p 140nt P-FA Gp 85J u9 15 2N123/5 8.00M 450n 150m 5.0 1.0m 65 t 15D P-A Gp
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2SA237 2SA518 OC603 2SA28 2SA476 2SA29

2SC102 transistor

Abstract: 2sc102 1.0 0 10m 90 4.0 1 2p 140nt P-FA Gp 85J u9 15 2N123/5 8.00M 450n 150m 5.0 1.0m 65 t 15D P-A Gp
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2SC102 transistor 2sc102 2N2902 TK30556 1763-0625 74308

2n3604 transistor

Abstract: 2N1103 1.0 0 10m 90 4.0 1 2p 140nt P-FA Gp 85J u9 15 2N123/5 8.00M 450n 150m 5.0 1.0m 65 t 15D P-A Gp
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NKT102 2sc85 2SA50 2SC175 2SC176 2SC177

2SC166

Abstract: 2N1103 u9 15 2N123/5 8.00M 450n 150m 5.0 1.0m 65 t 15D P-A Gp 85S TO 5 16 2N815 8.00M 600nt 400nt
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2N2426 2n826 2SA210 2SD100 2SC18H 2SC34

NKT 275 transistor

Abstract: 2sc5250 transistor 1.0 0 10m 90 4.0 1 2p 140nt P-FA Gp 85J u9 15 2N123/5 8.00M 450n 150m 5.0 1.0m 65 t 15D P-A Gp
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NKT 275 transistor 1401-0405 2N5577 2N5579 S2000 MD38

2N1077

Abstract: 2N1074 1.0 0 10m 90 4.0 1 2p 140nt P-FA Gp 85J u9 15 2N123/5 8.00M 450n 150m 5.0 1.0m 65 t 15D P-A Gp
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2N1077 2N1074 2N1076 2sc196 BF208 2N1075

A608 transistor pnp

Abstract: 2SC631 1.0 0 10m 90 4.0 1 2p 140nt P-FA Gp 85J u9 15 2N123/5 8.00M 450n 150m 5.0 1.0m 65 t 15D P-A Gp
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A608 transistor pnp 2SC631 2SC632 FV918 2N1082 AT345

transistor b1154

Abstract: B1154 1.0 0 10m 90 4.0 1 2p 140nt P-FA Gp 85J u9 15 2N123/5 8.00M 450n 150m 5.0 1.0m 65 t 15D P-A Gp
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transistor b1154 B1154 2N2962 10PE1 ASY13-2 GET116

DTS108

Abstract: 2sd222 85J u9 15 2N123/5 8.00M 450n 150m 5.0 1.0m 65 t 15D P-A Gp 85S TO 5 16 2N815 8.00M 600nt
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DTS108 2sd222 L30C UP 130 L10B 2SC5250 DTS103
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