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Part Manufacturer Description Datasheet BUY
TMS27C128-12JL Texas Instruments 131 072-Bit UV Erasable Programmable Read-Only Memory 28-CDIP 0 to 70 visit Texas Instruments
TMS27C128-2JL Texas Instruments 131 072-Bit UV Erasable Programmable Read-Only Memory 28-CDIP 0 to 70 visit Texas Instruments
TMS27C128-15JE Texas Instruments 131 072-Bit UV Erasable Programmable Read-Only Memory 28-CDIP -40 to 85 visit Texas Instruments
TMS27C128JE Texas Instruments 131 072-Bit UV Erasable Programmable Read-Only Memory 28-CDIP -40 to 85 visit Texas Instruments
TMS27C128-15JL Texas Instruments 131 072-Bit UV Erasable Programmable Read-Only Memory 28-CDIP 0 to 70 visit Texas Instruments
TMS27C128JL Texas Instruments 131 072-Bit UV Erasable Programmable Read-Only Memory 28-CDIP visit Texas Instruments

2K+EPROM

Catalog Datasheet MFG & Type PDF Document Tags

D164K

Abstract: L69 MARKING CODE SRAM 8K x 8 UV EPROM 8K x 8 UV EPROM 8K x 8 UV EPROM 8K x 8 UV EPROM 8K x 8 UV EPROM 8K x 8 UV EPROM 8K x 8 UV EPROM 8K x 8 UV EPROM 8K x 8 UV EPROM SMD Cross Reference DESC SMD (Standardized , 8 UV EPROM 5962-87515 08KX CY7C263-35TMB 24 CP T73 8K x 8 UV EPROM 5962-87515 08LX CY7C263-35WMB 24.3 DIP W14 8K x 8 UV EPROM 5962-87515 083X CY7C263-35QMB 28 S LCC Q64 8K x 8 UV EPROM 5962-87515 09JX CY7C264-45WMB 24.6 DIP W12 8K x 		Cypress Semiconductor
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D164K L69 MARKING CODE smd CY 203 5962-9206203MYX CY7C245-35DMB smd cross reference 25MUX 11MXX 11MZX 27MUX 13MXX 13MZX

smd transistor w16

Abstract: transistor smd w16 -120QMB X 32 R LCC Q55 32K x 8 UV EPROM A 5962-86063 16QXA CY27C256A-120WMB X 28.6 DIP W16 32K x 8 UV EPROM A 5962-86063 15QYA CY27C256A-150QMB 32 R LCC Q55 32K x 8 UV EPROM A 5962-86063 15QXA CY27C256A-150WMB 28.6 DIP W16 32K x 8 UV EPROM A 5962-86063 14QYA CY27C256A-170QMB 32 R LCC Q55 32K x 8 UV EPROM A 5962-86063 14QXA CY27C256A-170WMB 28.6 DIP W16 32K x 8 UV EPROM A 5962-86063 11QYA CY27C256A 		Cypress Semiconductor
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MIL-PRF-1835 smd transistor w16 transistor smd w16 PALC22V10B-15DMB 256K x 8 SRAM CY7C128A SRAM PALC22V10B-20DMB Mil JAN jm38510 Cross Reference CY6116A-35DMB CY6116A-35LMB CY6116A-45DMB CY6116A-55DMB CY7C128A-35DMB CY7C128A-45DMB

D168K

Abstract: PALC22V10B-20DMB SRAM A 5962-87515 053X CY7C261-45QMB 28 S LCC Q64 8K x 8 UV EPROM A 5962-87515 05LX CY7C261-45WMB 24.3 DIP W14 8K x 8 UV EPROM A 5962-87515 06LX CY7C261-55WMB 24.3 DIP W14 8K x 8 UV EPROM A 5962-87515 073X CY7C261-35QMB 4/98 28 S LCC Q64 8K x 8 UV EPROM A 5962-87515 07LX CY7C261-35WMB 4/98 24.3 DIP W14 8K x 8 UV EPROM A 5962-87515 08LX CY7C263-35WMB 24.3 DIP W14 8K x 8 UV EPROM A 5962-87515 		Cypress Semiconductor
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D168K CY7C186A-20DMB CY7C109L CY7C408A-15DMB PALCE22V10-30DMB CY7C342B-25RMB CY7C128A-55DMB CY7C186A-45DMB CY7C185A-45DMB CY7C186A-35DMB CY7C185A-35DMB 15MXX

BIT 3713

Abstract: 2K EPROM (bit) Interrupts (internal, external) Others - EPROM 64k RAM(Bytes) 10 ROM , -64S FP-64 TFP-80 DC-64S CP-68 8k 256 EPROM ZTAT - 53 1 2 - - 2 - - - - - 17,4 parallel handshake interface 16k; ROM-less 512 EPROM ZTAT , handshake interface 32k; ROM-less 1k EPROM ZTAT - 53 1 2 - - 2 - - - - - 17,4 parallel handshake interface 48k 2k EPROM ZTAT - 53 1 		Hitachi Semiconductor
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H8/323 H8/325 DP-64S SH7600 SH7604 BIT 3713 2K EPROM 534U H8/510 DTC 304-2 H8/3726 H8/3101 H8/300 H8/322 H8/324

5962-9311201MXX

Abstract: U208 EPROM 8K x 8 UV EPROM 8K x 8 UV EPROM 8K x 8 UV EPROM 8K x 8 UV EPROM 8K x 8 UV EPROM 8K x 8 UV EPROM 2K , EPLD 24-Pin CMOS UV EPLD 2K x 8 UV EPROM 2K x 8 UV EPROM 512 x 8 Registered PROM 512 x 8 Registered , -Pin CMOS PLD 2K x 8 EPROM 2K x 8 EPROM 2K x 8 EPROM 2K x 8 EPROM 2K x 8 EPROM 2K x 8 Registered PROM 2K x 8 , UV EPROM 2K x 8 Registered UV EPROM 32K x 8 UV EPROM 32K x 8 UV EPROM 32K x 8 UV EPROM 32K x 8 UV EPROM 32K x 8 UV EPROM CMOS EE PAL CMOS EE PAL CMOS EE PLD Lead Finish[5] A A A A A A A A A A A A A A A 		Cypress Semiconductor
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CY7C245-35WMB 5962-9311201MXX U208 PALC22V10D-30DMB PALC22V10B15KM CY7B991-7LMB 15MZX 17MZX CY7C185A-25DMB CY7C185A-20DMB CY7C261-25WMB

PALC22V10B-20DMB

Abstract: PALC22V10B-15DMB D22 8K x 8 SRAM A 5962-87515 05LX CY7C261-45WMB 24.3 DIP W14 8K x 8 UV EPROM A 5962-87515 06LX CY7C261-55WMB 24.3 DIP W14 8K x 8 UV EPROM A 5962-87515 073X CY7C261-35QMB 28 S LCC Q64 8K x 8 UV EPROM A 5962-87515 08LX CY7C263-35WMB 24.3 DIP W14 8K x 8 UV EPROM A 5962-87515 12LX CY7C261-25WMB 24.3 DIP W14 8K x 8 UV EPROM A , 24-Pin CMOS UV EPLD A 5962-87650 01LX CY7C291-50WMB 24.3 DIP W14 2K x 8 UV EPROM 		Cypress Semiconductor
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PALC22V10-25WMB CY37064P44-154YMB PALC22V10-25DMB CY37256P160-125UMB PALC22V10B-20KMB CY37512P208-100UMB PALC22V10-25QMB PALC22V10B-20QMB MIL-STD-883 MIL-PRF-38535

D168K

Abstract: smd cross reference 8 UV EPROM A 5962-86063 11QYA CY27C256A-200QMB 32 R LCC Q55 32K x 8 UV EPROM A 5962-86063 12QXA CY27C256A-250WMB 28.6 DIP W16 32K x 8 UV EPROM A 5962-86063 12QYA CY27C256A-250QMB 32 R LCC Q55 32K x 8 UV EPROM A 5962-86063 13QXA CY27C256A-300WMB 28.6 DIP W16 32K x 8 UV EPROM A 5962-86063 13QYA CY27C256A-300QMB 32 R LCC Q55 32K x 8 UV EPROM A 5962-86063 14QXA CY27C256A-170WMB 28.6 DIP W16 32K x 8 UV EPROM 		Cypress Semiconductor
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14LX CY7C271-35WMB PALC22V10B20WMB PALC22V10B-15LMB CY7C346-35RMB 5962-8966401XX CY7C186A-25DMB 5962-XXXXX

intel 2716

Abstract: 2716 EPROM 24 PINS pln socket for program ROM and PLA EPROM provided on the package surface, they ere designed to , evaluation of the LM6416/17E, 2. Features â'¢ General-purpose 2K-byte EPROM (equivalent to Intel 2716) Is , resistor value, R - kft No. 1246*3/8 08882970 LM64PG99, 98,97 5. EPROM Mounting ; â'¢ ] Mount the program EPROM and the PLA EPROM. For writing into the EPROM, use the EPROM writer function of the EVA-410, For preparing data of the PLA EPROM, refer to Chapter 3, Paragraph 3.6,4 of SOFTWARE DEVELOPMENT TOOL 		-
OCR Scan
LM6400 LM6413E LM6416E LM6417E intel 2716 2716 EPROM 24 PINS LM6402H eprom 2716 LM6402 LM64PG99/98/99 LM04OO LM64O0 LM6402/05A LM84PG98

AT25C01

Abstract: AT25C04 128K x 8 256K x 8 512K x 8 90-150 ns 120-150 ns 150 ns 1-Mbit, 2.7-Volt to 3.6-Volt EPROM 2-Mbit, 2.7-Volt to 3.6-Volt EPROM 4-Mbit, 2.7-Volt to 3.6-Volt EPROM Now Now Now 32K x 8 64K x 8 , 150-250 ns 150-300 ns 200-300 ns 200-300 ns 250-300 ns 256K 3-Volt EPROM 512K 3-Volt EPROM 1-Mbit, 3-Volt EPROM 1-Mbit, 3-Volt EPROM 2-Mbit, 3-Volt EPROM 4-Mbit, 3-Volt EPROM 4-Mbit, 3-Volt EPROM 8-Mbit, 3-Volt EPROM Now Now Now Now Now Now Now 4Q-96 32K x 8 64K x 8 64K x 16 128K 		Atmel
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AT34C64 AT34C128 AT34C256 AT40285 AT40495 AT76C176A AT25C01 AT25C04 AT76C176 3Q-95 4Q-95 AT40281

64k X 8

Abstract: E2PROM , 2.7-Volt to 3.6-Volt 1M bit, 2.7-Volt to 3.6-Volt EPROM 1M bit, 2.7-Volt to 3.6-Volt 2M bit, 2.7-Volt to 3.6-Volt EPROM 4M bit, 2.7-Volt to 3.6-Volt 4M bit, 2.7-Volt to 3.6-Volt EPROM 32K x 8 64K x , , 3-Volt EPROM 512K bit, 3-Volt EPROM 1M bit, 3-Volt EPROM 2M bit, 3-Volt EPROM 4M bit, 3-Volt EPROM 32K x 8 64K x 8 32K x 16 64K x 16 128K x 8 128K x 16 256K x 8 256K x 16 512K x 8 1024K , 85-150 ns 80-150 ns 100-150 ns 100-150 ns 256K, 5-Volt EPROM 512K, 5-Volt EPROM 512K, 5 		Atmel
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AT27BV256 AT27BV512 AT27BV010 AT27BV1024 AT27BV020 AT27BV4096 64k X 8 E2PROM eprom e spi flash eprom AT28C64 Eprom 1M AT49F2048

2K600

Abstract: EEPROM 16k, 32k, 64k, 128k, 256k, 512k, 1m, 2m, 4 bit, 2.7-Volt to 3.6-Volt 512K bit, 2.7-Volt to 3.6-Volt 1M bit, 2.7-Volt to 3.6-Volt EPROM 1M bit, 2.7-Volt to 3.6-Volt 2M bit, 2.7-Volt to 3.6-Volt EPROM 4M bit, 2.7-Volt to 3.6-Volt 4M bit, 2.7-Volt to 3.6-Volt EPROM 32K x 8 64K x 8 128K x 8 256K x 8 512K x 8 70-150 ns 90-150 ns 90-150 ns 120-150 ns 150 ns 256K bit, 3-Volt EPROM 512K bit, 3-Volt EPROM 1M bit, 3-Volt EPROM 2M bit, 3-Volt EPROM 4M bit, 3-Volt EPROM 32K x 8 64K x 8 32K x 16 64K x 16 128K x 8 128K x 16 		Atmel
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AT89LV52 AT89C1051 AT89C2051 2K600 EEPROM 16k, 32k, 64k, 128k, 256k, 512k, 1m, 2m, 4 ic at89c51 20 pin at89c2051 ic ATMEL PRODUCT GUIDE ECLP07 AT90S1300 AT90S2312 AT90S8414 AT89C51 AT89LV51 AT89C52

1K x 4 PROM

Abstract: AT88SC1604 120-150 ns 1M bit, 2.7-Volt to 3.6-Volt EPROM Now AT27BV1024 64K x 16 120-150 ns 1M bit , -Volt EPROM Now AT27BV040 512K x 8 150 ns 4M bit, 2.7-Volt to 3.6-Volt EPROM Now , ) AT27LV256A 32K x 8 70-150 ns 256K bit, 3-Volt EPROM Now AT27LV512A 64K x 8 90-150 ns 512K bit, 3-Volt EPROM Now AT27LV010A 128K x 8 90-150 ns 1M bit, 3-Volt EPROM Now AT27LV020A 256K x 8 120-150 ns 2M bit, 3-Volt EPROM Now AT27LV040A 512K x 8 150 ns 4M 		Atmel
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AT28HC64B AT28HC256 AT28HC256E AT28BV16 AT28BV64 AT28BV64B 1K x 4 PROM AT88SC1604 AT88SC1601 AT45DB021 AT29C256 AT28LV010

dil40

Abstract: 8031 8-Bit Microcontroller 80C31 80C51 87C51 ROM/ EPROM 0 4k ROM 4k EPROM RAM SPEED (MHz) 128 128 128 33 33 33 , 8351FX(M) POD-C51FX(N) POD-C51B(N) 83C51FA 87C51FA 8k ROM 8k EPROM 256 256 24 24 DIL40, LCC44 QFP44 Enhanced UART, 3 timers, PCA 83L51FA 87L51FA 8k ROM 8k EPROM 256 256 , EPROM 256 256 24 24 DIL40, LCC44 QFP44 Enhanced UART, 3 timers, PCA 87L51FB 83L51FB 16k ROM 16k EPROM 256 256 20 20 DIL40, LCC44 QFP44 Enhanced UART, 3 timers, PCA 		Philips Semiconductors
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87C51FB OM1083 8031 8-Bit Microcontroller OM424 OM1077 8031 MICROCONTROLLER interfacing to ROM 8031 interfacing to rom OM1092 OM1097 OM4120S 8052PC PDS51FBSD

VS064

Abstract: OM1079 83CE528 80C550 83C550 87C550 80C552 83C552 87C552 83CE558 89CE558 80CE558 80C562 83C562 ROM/ EPROM 0 4k ROM 4k EPROM 8k ROM 8k EPROM 8k ROM 8k EPROM 16k ROM 16k EPROM 16k ROM 16k EPROM 32k ROM 32k EPROM 0 8k ROM 8k EPROM 16k ROM 16k EPROM 32k ROM 32k EPROM 0 4k ROM 4k EPROM 16K ROM 16K EPROM 16K EPROM 16k ROM 32k ROM 32k EPROM 32kROM 0 4k ROM 4k EPROM 0 8k ROM 8k EPROM 32K ROM 32K FLASH 0 0 8k ROM RAM 128 , 8k EPROM 8k ROM 8k EPROM 0 16k ROM 16k EPROM 256 256 256 256 256 512 512 512 16 16 16 16 16 16 		-
OCR Scan
VS064 OM1079 D1L40 84C41 OPD-C51B 84c21a 83C51FB 87C51FC 83C51FC 80C32 80C52 87C52
Abstract: Description â¡ Programmable System Device (PSD) â¡ Major System Functions â'" 128K EPROM â'" 32KSRAM , Series DSP â¡ Byte or Word Memory Configurations â'" 1 6 K x 8 o r 8 K x 16 EPROM â'" 4 K x 8 o r 2K , blocks of EPROM, SRAM, and logic in a single circuit. The major functional blocks include a Programmable Address Decoder (PAD), 16K bytes of high speed EPROM, and 4K bytes of high speed SRAM. A block , microprocessor or microcontroller system. The EPROM and SRAM memory blocks can be user-configured in either -
OCR Scan
TMS320LCXX PSD100 PSD100-35J PSD100-35L D100-40J PSD100-40L
Abstract: MEMORY (MAPâ"¢) KEY FEATURES Super Fast Access Time â'¢ Addressable Range â'" EPROM/SRAM: 40 ns (including decode) â'" Chip Select Outputs: 22 ns High Density UV Erasable EPROM â'" 128K Bits â , Address Programmable (MAPâ"¢) memory products that integrate 128K bits of EPROM, 32K bits of SRAM and a , the placement of physical 16K bytes or 8K words of EPROM and 4K bytes or 2K words of SRAM anywhere in , this product is the integration of high speed, high density UV erasable EPROM and a CMOS SRAM along -
OCR Scan
WSMAP162/WSMAP161 WSMAP162 WSMAP161 WSMAP162/161 WSMAP162-40D AP162-40P

GA1033

Abstract: EPROM PROGRAMING BOARD USER MANUAL Programmable System Device (PSD) - User-Configurable Peripheral with Memory - 128K EPROM - 32KSRAM - , Configurations - 1 6 K x 8 o r 8 K x 16 EPROM - 4 K x 8 o r 2K x 16 SRAM - 2 MByte or 1 MWord Address Decoding , , user-configurable blocks of EPROM, SRAM, and logic in a single circuit. The major functional blocks include a Programmable Address Decoder (PAD), 16K bytes of high speed EPROM, and 4K bytes of high speed SRAM. A block , anywhere in a 2 MByte address space of a microprocessor or microcontroller system. The EPROM and SRAM 		-
OCR Scan
GA1033 EPROM PROGRAMING BOARD USER MANUAL PSD1XX PSD100L DSP16 D0D22 PSD100L-70J PSD100L-70L PSD100L-90J

Architecture and features of TMS320XX

Abstract: TMS320XX MEMORY (MAPm) KEY FEATURES Super Fast Access Time â'" EPROM/SRAM: 40 ns (including decode) â'" Chip Select Outputs: 22 ns High Density UV Erasable EPROM â'" 128K Bits High Density 6-Transistor Static , 128K bits of EPROM, 32K bits of SRAM and a Programmable Mapping Decoder (PMDâ"¢) into a single 40 , processor systems. The on-board PMDâ"¢ enables the placement of physical 16K bytes or 8K words of EPROM and , erasable EPROM and a CMOS SRAM along with decoding logic on a single chip. The WSMAP162 is ideal for use 		-
OCR Scan
Architecture and features of TMS320XX TMS320XX eprom ram 512k x 16 bits WS*57c257 ws57c257 WSMAP161-40D WSMAP161-40P 62-45D WSMAP162-45P WSMAP161-45D WSMAP161-45P

2Mbit EPROM

Abstract: IC 4093 Availability AT27HC010 Low Voltage 128K X 8 35 ns 1-Mbit EPROM 10-94 AT27LV256R AT27LV512R , ns 250-300 ns 250-300 ns 256K 3-Volt EPROM 512K 3-Volt EPROM 1-Mbit, 3-Volt EPROM 1-Mbit, 3-Volt EPROM 2-Mbit, 3-Volt EPROM 4-Mbit, 3-Volt EPROM 4-Mbit, 3-Volt EPROM 8-Mbit, 3-Volt EPROM Now Now Now , 70-250 ns 70-250 ns 85-200 ns 100-200 ns 100-200 ns 100-200 ns 256K EPROM 512K EPROM 1-Mbit EPROM 1-Mbit EPROM, Standard & Low Power 2-Mbit EPROM 4-Mbit EPROM 4-Mbit EPROM 8-Mbit EPROM Now Now Now Now 40-93 		-
OCR Scan
2Mbit EPROM IC 4093 cmos 4093 CC 4093 N rom at29c010 AT40391 ATF16V8B ATF22V10B AT22LV10 ATV750BV ATV2500BV 4Q-93
Abstract: "¢) KEY FEATURES Super Fast Access Time Addressable Range â'" EPROM/SRAM: 40 ns (including decode , High Density UV Erasable EPROM Chip Select Outputs â'" 128K Bits High Density 6 , of EPROM, 32K bits of SRAM and a Programmable Mapping Decoder (PMDâ"¢) into a single 44-pin package , systems. The on-board PMDâ"¢ enables the placement of physical 16K bytes or 8K words of EPROM and 4K , EPROM and a 6-transistor full CMOS SRAM along with decoding logic on a single chip. memory The -
OCR Scan
WSMAP168 WSMAP168-40C WSMAP168-40CMB WSMAP168-40J WSMAP168-40X WSMAP168-40XM
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