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1 - 29 of about 29 for 2A-45 |
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First line: WATT DC-DC CONVERTERS INPUT VOLTAGE Feature 24-Pin Package Regulated Outputs Efficiency Input Abstract: .. 2A-45. 1.5 WATT DC-DC CONVERTERS 2 A 2 A S E R I E S. Feature. • 24-Pin DIP Package • Pi Input Filter. • Regulated Outputs • Low Ripple and Noise. • 50% Efficiency. MODEL INPUT OUTPUT OUTPUT INPUT CURRENT CASE .. datasheet abstract.. |
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First line: BEHLMAN WATT DC-DC CONVERTERS Feature 24-Pin Package Regulated Outputs Efficiency Input Filter Abstract: .. 2A-45. 1.5 WATT DC-DC CONVERTERS. Feature. • 24-Pin DIP Package • Pi Input Filter. • Regulated .. datasheet abstract.. |
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First line: AF9926N N-Channel Enhancement Mode Power MOSFET Features Capable 2.5V Gate Drive On-resistance Abstract: .. =4.5V, ID=6A - - 30 RDS ON Static Drain-Source On-Resistance Note 3 VGS=2.5V, ID=5.2A 45 mΩVGS th Gate Threshold Voltage VDS=VGS, ID=250uA - - 1.2 V gfs Forward Transconductance VDS=10V .. datasheet abstract.. |
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First line: AF9926N N-Channel Enhancement Mode Power MOSFET Features Capable 2.5V Gate Drive On-resistance Abstract: .. =4.5V, ID=6A - - 30 RDS ON Static Drain-Source On-Resistance Note 3 VGS=2.5V, ID=5.2A 45 mΩVGS th Gate Threshold Voltage VDS=VGS, ID=250uA - - 1.2 V gfs Forward Transconductance VDS=10V .. datasheet abstract.. |
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First line: three-terminal inductor / capacitor features Compact physical dimensions Excellent wave reduction control Exceptional attenuation Abstract: .. 1J, 2AF, 2B: 20 - 90%; 2A: 45 - 85% Measuring Condition Standard Temperature Relative Humidity. 20°C ± 1°C. 1J, 2AF, 2A: 60 - 67%: 2B: 20 - 90% Measuring Condition Precision Temperature Relative .. datasheet abstract.. |
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First line: P-Channel Power MOSFET General Description AAT8543 threshold MOSFET designed battery cell phone Abstract: .. RDS ON Drain-Source ON-Resistance 2 VGS=-4.5V, ID=-4.2A 45 57 mΩ VGS=-2.5V, ID=-3.1A 80 104ID ON On-State Drain Current 3 VGS=-4.5V, VDS=-5V Pulsed -20 AVGS th Gate Threshold Voltage .. datasheet abstract.. |
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First line: STU / D3055L2 SamHop Microelectronics Corp. Feb.01 ver1.3 N-Channel Logic Level Enhancement Mode Field Abstract: .. V G S 4.5V, ID 5.2A 45. O n-S tate Drain C urrent ID O N V DS = 5V, V G S = 4.5V A. S F orward Trans conductance F S g V DS 10V, ID 6.0A. DY NAMIC C HAR AC T E R IS T IC S c. Input C apacitance C IS S. C R S S. C O S S O utput C apacitance .. datasheet abstract.. |
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First line: DU / D3055L2 amHop Microelectronics orp. Augus hannel nhancement Mode Field ffect Trans ODUC Abstract: .. V G S 2.5V, ID 5.2A 45 70. O n-S tate Drain C urrent ID O N V DS = 5V, V G S = 4.5V 20. 17. A. S F orward Trans conductance F S g V DS 10V, ID 6.0A. DY NAMIC C HAR AC T E R IS T IC S c. Input C apacitance C IS S. C R S S. C O S S O utput .. datasheet abstract.. |
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First line: APM2314 N-Channel Enhancement Mode MOSFET Features 20V / 2.8A RDS ON =45m typ. VGS=4.5V RDS ON =55m typ. VGS=2.5V Super Abstract: .. VGS=4.5V , IDS=1.2A 45 60. RDS ON a. Drain-Source On-state. Resistance VGS=2.5V , IDS=0.8A 55 80. mΩ. VSD a. Diode Forward Voltage ISD=0.5A , VGS=0V 0.75 1.3 V. Dynamicb. Qg Total Gate Charge 6.5 9. Qgs Gate .. datasheet abstract.. |
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First line: DU / D3055L2 amHop Microelectronics orp. May2004 ver1.1 hannel nhancement Mode Field ffect Trans Abstract: .. V G S 2.5V, ID 5.2A 45 70. O n-S tate Drain C urrent ID O N V DS = 5V, V G S = 4.5V 20. 17. A. S F orward Trans conductance F S g V DS 10V, ID 6.0A. DY NAMIC C HAR AC T E R IS T IC S c. Input C apacitance C IS S. C R S S. C O S S O utput .. datasheet abstract.. |
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First line: SERIES INTRODUCTIONS BOARD MOUNTING FILTERS SPECIFICATIONS Direct board mounting easy installation space Abstract: .. 02MP1 2.5/2A 45 60 60 45 40 25. 02MP2 2.5/2A 50 55 55 50 40 25. 03ME2 3A 10 15 20 35 40 40. 03ME3 3A 22 30 35 45 45 48. 03ME3B 3A 12 20 28 40 40 40. 03ME3D 3A 18 28 39 48 48 55. 03ME3DA 3A 15 25 30 40 40 45. 03ME4/P 3A 30 40 40 35 .. datasheet abstract.. |
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First line: AAT8543 P-Channel Power MOSFET General Description AAT8543 threshold P-channel MOSFET designed battery Abstract: .. RDS ON Drain-Source On-Resistance1 VGS = -4.5V, ID = -4.2A 45 57 mΩ VGS = -2.5V, ID = -3.1A 80 104ID ON On-State Drain Current1 VGS = -4.5V, VDS = -5V pulsed -20 AVGS th Gate Threshold Voltage .. datasheet abstract.. |
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First line: FDC365P P-Channel PowerTrench MOSFET November FDC365P P-Channel PowerTrench MOSFET -35V -4.3A Features Abstract: .. rDS on Static Drain to Source On Resistance VGS = -10V, ID = -4.2A 45 55. mΩ VGS = -4.5V, ID = -3.2A 70 80. VGS = -10V, ID = -4.2A, TJ = 125°C 69 90. gFS Forward Transconductance VDS = -10V, ID = -4.2A 8.7 S. Dynamic .. datasheet abstract.. |
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First line: Receiver Circuit Preliminary Data Bipolar Features Heterodyne receiver with demodulator Down mixing Abstract: .. IFI-input impedance 2a 45 .. 90 11 12. LO2-input impedance 2b 180, 360 9 ‐ MO-output impedance 2c 45, 71 15 16. PMB 2402. Semiconductor Group 17. PMB 2402. Test Circuit 3. f W = wanted input signal from received .. datasheet abstract.. |
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First line: Receiver Circuit Preliminary Data Bipolar Features Heterodyne receiver with demodulator Down mixing Abstract: .. IFI-input impedance 2a 45 .. 90 11 12. LO2-input impedance 2b 180, 360 9 ‐ MO-output impedance 2c 45, 71 15 16. PMB 2401. Semiconductor Group 17. PMB 2401. Test Circuit 3. f W = wanted input signal from received .. datasheet abstract.. |
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First line: Industrial Connectors CA-COM COM-7 / 0300 CA-COM Introduction Industries Cannon connectors series CA-COM CA-COM-B Abstract: .. CA08COM-F10SL-*-P* 24,1 5/8-24UNEF-2B 5/8-24UNEF-2A 45 22,0 9,4. CA08COM-F12SL-*-P* 25,8 3/4-20UNEF-2B 5/8-24UNEF-2A 45 22,0 9,4. CA08COM-F14S-*-P* 28,8 7/8-20UNEF-2B 3/4-20UNEF .. datasheet abstract.. |
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First line: Industrial Connectors CA-COM COM-7 / 0300 CA-COM Introduction Industries Cannon connectors series CA-COM CA-COM-B Abstract: .. CA08COM-F10SL-*-P* 24,1 5/8-24UNEF-2B 5/8-24UNEF-2A 45 22,0 9,4. CA08COM-F12SL-*-P* 25,8 3/4-20UNEF-2B 5/8-24UNEF-2A 45 22,0 9,4. CA08COM-F14S-*-P* 28,8 7/8-20UNEF-2B 3/4-20UNEF .. datasheet abstract.. |
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First line: Final Electrical Specifications LT1943 High Current Quad Output Regulator Panels FEATURES DESCRIPTION Abstract: .. BIAS Pin Current ISW2 = 2A 45 mA. Maximum Duty Cycle SW2 ● 85 92 % SWITCH 3 350mA BOOST FB3 Voltage 1.23 1.25 1.27 V. ● 1.22 1.27 V. FB3 Voltage Line Regulation 4.5V < VIN < 22V 0.01 0.03 %/V. FB3 Pin Bias .. datasheet abstract.. |
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First line: Communications Mixer / Amplifier Version Preliminary Datasheet T2333-XV12-P3-7600 Edition Published Siemens Bereich Halbleiter Abstract: .. 2a 45 15/100 15 X X. CB. VGC. 16. Bias Tee. AO Output. VCC. CB. 180. 180. CK. PMB 2333. 9 8. VCC. VCC. Toko Balun 1:1. Toko .. datasheet abstract.. |
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First line: LT3513 2MHz High Current 5-Output Regulator TFT-LCD Panels FEATURES DESCRIPTION LT3513 5-output Abstract: .. BIAS Pin Current Due to SW2 ISW2 = 1.2A 45 mA. Maximum Duty Cycle SW2 ● 75 90 % The l denotes the specifi cations which apply over the full operating. temperature range, otherwise specifi cations are .. datasheet abstract.. |
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First line: LT3513 2MHz High Current 5-Output Regulator TFT-LCD Panels FEATURES DESCRIPTION LT3513 5-output Abstract: .. BIAS Pin Current Due to SW2 ISW2 = 1.2A 45 mA. Maximum Duty Cycle SW2 ● 75 90 % The l denotes the specifi cations which apply over the full operating. temperature range, otherwise specifi cations are .. datasheet abstract.. |
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First line: MOTOROLA Order Number DSP56301 / D Rev. Semiconductor Products Sector DSP56301 Advance Information 24-bit Abstract: .. DSP56301 Technical Data 2A-45. CAUTION. Section 2A for Masks With UDR2 Process Technology Only Figure 2A-21. Synchronous Bus Timings SRAM 1 WS BCR Controlled :5. 5’ ’DWD2XW ’>‐@ &/.287. 7$ ’DWD .. datasheet abstract.. |
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First line: GRAYCHIP CHIPS SYSTEMS Park Blvd. 323-2955 323-0206 Palo Alto GC4114 QUAD TRANSMIT Abstract: .. 0A AA 2A 45 55 AA. 0B AA 1B 67 AA 55. 0C AA 2C 89 55 AA. 0D 08 2D AB AA 55. 0E 08 2E EF AA 55. 0F E51 2F 00 55 AA. 10 00 30 .. datasheet abstract.. |
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First line: SLWS134 GC4114 QUAD TRANSMIT CHIP DATASHEET This datasheet contains information which changed Abstract: .. 0A AA 2A 45 55 AA. 0B AA 1B 67 AA 55. 0C AA 2C 89 55 AA. 0D 08 2D AB AA 55. 0E 08 2E EF AA 55. 0F E51 2F 00 55 AA. 10 00 30 .. datasheet abstract.. |
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First line: SLWS134 GC4114 QUAD TRANSMIT CHIP DATASHEET This datasheet contains information which changed Abstract: .. 0A AA 2A 45 55 AA. 0B AA 1B 67 AA 55. 0C AA 2C 89 55 AA. 0D 08 2D AB AA 55. 0E 08 2E EF AA 55. 0F E51 2F 00 55 AA. 10 00 30 .. datasheet abstract.. |
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First line: SLWS134 GC4114 QUAD TRANSMIT CHIP DATASHEET This datasheet contains information which changed Abstract: .. 0A AA 2A 45 55 AA. 0B AA 1B 67 AA 55. 0C AA 2C 89 55 AA. 0D 08 2D AB AA 55. 0E 08 2E EF AA 55. 0F E51 2F 00 55 AA. 10 00 30 .. datasheet abstract.. |
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First line: Sitronix FEATURES Direct display data through display data RAM. capacity bits Display Abstract: .. Ver 0.2a 45/59 2001/10/22. <Turning the power VDD - VSS off : When command control is not possible.> 2 Reset The LCD powers VDD - VSS are off. → Power VDD - VSS OFF. Observe tL > tH. When tL < tH .. datasheet abstract.. |
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First line: MOTOROLA Order Number DSP56303 / D Rev. Semiconductor Products Sector DSP56303 Advance Information 24-Bit Abstract: .. DSP56303 Technical Data 2A-45. CAUTION. Section 2A for Masks With UDR2 Process Technology Only. Figure 2A-22. Synchronous Bus Timings SRAM 2 WS TA Controlled $‐$ :5. 5’ ’DWD2XW ’‐’ $$‐$$ &/.287 .. datasheet abstract.. |
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First line: MOTOROLA Order Number DSP56303 / D Rev. Semiconductor Products Sector DSP56303 Advance Information 24-Bit Abstract: .. DSP56303 Technical Data 2A-45. CAUTION. Section 2A for Masks With UDR2 Process Technology Only. Figure 2A-20. DRAM Refresh Access. 5$6. &$6. :5. 2A-46 DSP56303 Technical Data. External Memory Expansion .. datasheet abstract.. |
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250 Pages |
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