| Fulltext Datasheet Results |
1 - 50 of about 78 for 2A-45 |
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First line: BF606* Silicon Transistor oscillator stages Type Marking Ordering Code nfigural Package1) Q62702-F535 TO-92 Parameter Symbol Values Unit Collector-emitter voltage VCEO Collector-base voltage VcBO Abstract: .. Vebo 4 Collector current /c 25 mA Emitter current /e 30 Total power dissipation, 2a < 45 Â C Plot 300 mW Junction temperature T 150 'C Storage temperature range 7stg -55.. + 150 Thermal Resistance .. Tags: BF606* datasheet abstract.. |
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First line: transformer 15v 500mA 226R Voltage P.C. Board Mount (226-228 Series) Transformer Schematic Abstract: .. 227T 227T 40 400 40V C.T. @ 1A 20V @ 2A 45 5.7. Part No. Size VA Freq. Hz Secondary RMS Temp. Rise C % Regul. Series Parallel. 228D 228D 10 60 20V C.T. @ 500ma 500ma 10V @ 1A 20 12.2. 228F 228F 10 60 30V C.T. @ 340ma 340ma 15V @ 670ma 670ma .. Tags: 226R transformer 15v 500mA datasheet abstract.. |
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First line: KSH210 D-PACK SURFACE MOUNT APPLICATIONS High Current Gain Collector Emitter Saturation Voltage Lead Formed Surface Mount Applications Suffix) Straight Lead PACK," Suffix) Characteristic Symbol Rating Unit Abstract: .. =-8V, lc=0 -100 nA * DC Current Gain hFE VCE= - 1V, lc= - 500mA 500mA 70 Vce=-1V, le = - 2A 45 180 Vce=-2V, le = - 5A 10 * Collector Emitter Saturation Voltage VcE sat lc= - 500mA 500mA , lB= - 50mA 50mA -0.3 V lc= - 2A, lB= - .. Tags: datasheet abstract.. |
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First line: WATT DC-DC CONVERTERS Abstract: .. 2A-45. 1.5 WATT DC-DC CONVERTERS. Feature. • 24-Pin 24-Pin DIP Package • Pi Input Filter. • Regulated .. Tags: datasheet abstract.. |
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First line: Abstract: .. 2A-45. 1.5 WATT DC-DC CONVERTERS 2 A 2 A S E R I E S. Feature. • 24-Pin 24-Pin DIP Package • Pi Input Filter. • Regulated Outputs • Low Ripple and Noise. • 50% Efficiency. MODEL INPUT OUTPUT OUTPUT INPUT CURRENT CASE .. Tags: datasheet abstract.. |
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First line: 9926N* AF9926N Capable 2.5V Gate Drive On-resistance Drive Current Surface Mount Package Abstract: .. =4.5V, ID=6A - - 30 RDS ON Static Drain-Source On-Resistance Note 3 VGS=2.5V, ID=5.2A 45 mΩVGS th Gate Threshold Voltage VDS=VGS, ID=250uA 250uA - - 1.2 V gfs Forward Transconductance VDS=10V .. Tags: 9926N* 9926N l z-01 AF9926N |
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First line: MJD200 DPAK SURFACE MOUNT APPLICATIONS High Current Gain Built-in Damper Diode Lead Formed Surface Mount Applications Suffix) Straight Lead PACK," Suffix) Characteristic Symbol Rating Unit Collector Base Voltage Vobo Abstract: .. Vebo=8V, lc = 0 100 nA * DC Current Gain hFE VCE= 1V, lc= 500mA 500mA 70 Vce= 1V, lc=2A 45 180 * Collector Emitter Saturation Voltage VcE sat Vce=2V, lc=5A 10 lc= 500mA 500mA , lB=50mA 50mA 0.3 V lc=2A, lB= 200mA 200mA 0.75 .. Tags: datasheet abstract.. |
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First line: KSE210 COLLECTOR-EMITTER SUSTAINING VOLTAGE COLLECTOR-EMITTER SATURATION SATURATION VOLTAGE HIGH CURRENT GAIN-BANDWIDTH PRODUCT-MIN fj=65MHz -100mA Complement KSE200 Characteristic Symbol Rating Unit Collector-Base Voltage VcbO Collector-Emitter Voltage VcEO Emitter- Base Voltage Vebo Abstract: .. Current Iebo Vbe = - 8V, lc=0 -100 nA DC Current Gain hFE Vce=- 1V, lc=- 500mA 500mA 70 VCE = - 1V, lc=-2A 45 180 Vce = - 2V, lc=-5A 10 Collector- Emitter Saturation Voltage VcE sat lc= - 500mA 500mA , lB= - 50mA 50mA -0 .. Tags: datasheet abstract.. |
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First line: MJE210 COLLECTOR-EMITTER SATURATION VOLTAGE HIGH CURRENT GAIN-BANDWIDTH PRODUCT-MIN fr=65MHz -100mA Complement MJE200 Characteristic Symbol Rating Unit Collector- Base Voltage VcbO Collector-Emitter Voltage VcEO Abstract: .. Vbe=-8V, lc=0 -100 nA DC Current Gain hFE Vce= - 1V, lc=- 500mA 500mA 70 Vce=- 1V, lc= - 2A 45 180 Vce = - 2V, lc=-5A 10 Collector- Emitter Saturation Voltage VcE sat lc=- 500mA 500mA , lB= - 50mA 50mA -0.3 V le = - 2A, lc .. Tags: datasheet abstract.. |
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First line: KSH200 D-PACK SURFACE MOUNT APPLICATIONS High Current Gain Built-in Damper Diode Lead Formed Surface Mount Applications Suffix) Straight Lead PACK," Suffix) Characteristic Symbol Rating Unit Abstract: .. nA Emitter Cutoff Current Iebo Vce= 1V, lc= 500mA 500mA 70 * DC Current Gain hFE Vce= 1V, lc=2A 45 180 Vce=2V, lc=5A 10 * Collector Emitter Saturation Voltage VcE sat lc= 500mA 500mA , lB=50mA 50mA 0.3 V lc= 2A, lB .. Tags: datasheet abstract.. |
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First line: KSE200 COLLECTOR-EMITTER SUSTAINING VOLTAGE COLLECTOR-EMITTER SATURATION VOLTAGE HIGH CURRENT GAIN-BANDWIDTH PRODUCT-MIN fT=65MHz lc=100mA Complement KSE210 Characteristic Symbol Rating Unit Collector-Base Voltage VcbO Collector-Emitter Voltage VcEO Abstract: .. Current Iebo Vbe=8V, lc=0 100 nA DC Current Gain hFE VCE=1V, lc=500mA 500mA 70 VCE=1V, lc=2A 45 180 Vce=2V, lc=5A 10 Collector- Emitter Saturation Voltage VcE sat lc=500mA 500mA , lB=50mA 50mA 0.3 V lc=2A, lc .. Tags: datasheet abstract.. |
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First line: MJE200 COLLECTOR-EMITTER SATURATION VOLTAGE HIGH CURRENT GAIN-BANDWIDTH PRODUCT-MIN fT=65MHz lc=100mA Complement MJE210 TO-126 Characteristic Symbol Rating Unit Collector- Base Voltage Vobo Abstract: .. Vbe=8V, lc=0 100 nA DC Current Gain hfe VCE=1V, lc=500mA 500mA 70 VCE=1V, lc=2A 45 180 Vce=2V, lc=5A 10 Collector- Emitter Saturation Voltage VcE sat lc=500mA 500mA , lB=50mA 50mA 0.3 V lc=2A, lB=200mA 200mA 0.75 V .. Tags: datasheet abstract.. |
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First line: TSM6963SD Dual P-Channel MOSFET TSSOP-8 Definition: Drain Drain Source Source Source Source Gate Gate Abstract: .. VGS =-1.8V, I D =-2A -- 45 68. Forward Transconductance VDS =-5V, I D =-4.5A gfs -- 16 -- S. Diode Forward Voltage IS =-0.5A, V GS =0V VSD -- - 0.8 -1.3 V. Dynamic b. Total Gate Charge. VDS =-10V -10V , I D =-4.5A, VGS .. Tags: TSM6963SD |
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First line: AF9926N Capable 2.5V Gate Drive On-resistance Drive Current Surface Mount Package Abstract: .. =4.5V, ID=6A - - 30 RDS ON Static Drain-Source On-Resistance Note 3 VGS=2.5V, ID=5.2A 45 mΩVGS th Gate Threshold Voltage VDS=VGS, ID=250uA 250uA - - 1.2 V gfs Forward Transconductance VDS=10V .. Tags: marking RD 79 AF9926N |
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First line: a7y* ST3407 Channel Enhancement Mode MOSFET -3.6A DESCRIPTION ST3407 P-Channel logic enhancement mode power field effect transistor which produced using high cell density, DMOS trench technology. This high density process especially tailored minimize on-state resistance. These devices particularly s Abstract: .. Drain-source On-Resistance RDS on VGS=-10.0V,ID=-4.0A VGS=-4.5V,ID=-3.2A 45. 60. 60 80. mΩ. Forward Transconductance gfs VDS=-5.0V,ID=-4.0A 10 S. Diode Forward Voltage VSD IS=-1.0A,VGS=0V .. Tags: a7y* sot-23 Marking mosfet sot-23 MARKING 3l SOT-23 2A p-channel SOT-23 20V p-channel sot-23 MOSFET SOT-23 MOSFET P-channel SOT-23 MOSFET P SOT-23 data MOSFET SOT-23 ST3407 |
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First line: tic 2250 SSS2316 Abstract: .. VGS=1.8V, ID=2A 45. On-State Drain Current ID ON VDS=5V, VGS=4.5V 20 A. SSS2316 SSS2316 . 3. VDS, Drain-to-Source Voltage V I D. A tn e rru C n ia rD , Figure 1. Output Characteristics. 0 2 4 6 8 10 12. 20. 16. 12. 8 .. Tags: tic 2250 SSS2316 |
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First line: HP4192A 1j capacitor three-terminal inductor/capacitor features Compact physical dimensions Excellent wave reduction control Exceptional attenuation Excellent impedance matching signal lines Marking: Brown black body color with marking 2AF) White black body color Products with lead-free terminations Abstract: .. 1J, 2AF, 2B: 20 - 90%; 2A: 45 - 85% Measuring Condition Standard Temperature Relative Humidity. 20 C 1 C. 1J, 2AF, 2A: 60 - 67%: 2B: 20 - 90% Measuring Condition Precision Temperature Relative .. Tags: HP4192A 2B marking 1j capacitor datasheet abstract.. |
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First line: three-terminal inductor/capacitor features Compact physical dimensions Excellent wave reduction control Exceptional attenuation Excellent impedance matching signal lines Marking: Brown black body color with marking 2AF) White black body color (2A) Products with lead-free terminations meet RoHS requi Abstract: .. 1J, 2AF: 20 - 90%; 2A: 45 - 85% Measuring Condition Standard Temperature Relative Humidity. 20 C 1 C 60 - 67% Measuring Condition Precision Temperature Relative Humidity. 1J & 2AF. 2A. environmental .. Tags: datasheet abstract.. |
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First line: HYMD216M646D(P)6-D43/J/K/H SERIAL PRESENCE DETECT -D43 Byte Function described Function support Abstract: .. 30 Minimum active to precharge time tRAS 40 ns 28 42 ns 2A 45 ns 2D 45 ns 2D. 31 Module row density 128 MBytes 20 128 MBytes 20 128 MBytes 20 128 MBytes 20. 32 Command and Address Signal Input Setup Time .. Tags: HYMD216M646D |
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First line: HYMD232M646D(P)6-D43/J/K/H SERIAL PRESENCE DETECT -D43 Byte Function described Function support Abstract: .. 30 Minimum active to precharge time tRAS 40 ns 28 42 ns 2A 45 ns 2D 45 ns 2D. 31 Module row density 128 MBytes 20 128 MBytes 20 128 MBytes 20 128 MBytes 20. 32 Command and Address Signal Input Setup Time .. Tags: HYMD232M646D |
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First line: HYMD564M646B(P)6-D43/J/K/H SERIAL PRESENCE DETECT -D43 Byte Function described Function support Abstract: .. 30 Minimum active to precharge time tRAS 40 ns 28 42 ns 2A 45 ns 2D 45 ns 2D. 31 Module row density 256 MBytes 40 256 MBytes 40 256 MBytes 40 256 MBytes 40. 32 Command and Address Signal Input Setup Time .. Tags: HYMD564M646B |
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First line: HYMD212G726D(P)F4-D43/J/K/H SERIAL PRESENCE DETECT -D43 Byte Function described Function support Abstract: .. 30 Minimum active to precharge time tRAS 40 ns 28 42 ns 2A 45 ns 2D 45 ns 2D. 31 Module row density 512 MBytes 80 512 MBytes 80 512 MBytes 80 512 MBytes 80. 32 Command and Address Signal Input Setup Time .. Tags: HYMD212G726D |
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First line: HYMD512M646DF(P)8-D43/J/K/H SERIAL PRESENCE DETECT -D43 Byte Function described Function support Abstract: .. 30 Minimum active to precharge time tRAS 40 ns 28 42 ns 2A 45 ns 2D 45 ns 2D. 31 Module row density 512 MBytes 80 512 MBytes 80 512 MBytes 80 512 MBytes 80. 32 Command and Address Signal Input Setup Time .. Tags: HYMD512M646DF |
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First line: HYMD564M646C(P)6-D43/J/K/H SERIAL PRESENCE DETECT -D43 Byte Function described Function support Abstract: .. 30 Minimum active to precharge time tRAS 40 ns 28 42 ns 2A 45 ns 2D 45 ns 2D. 31 Module row density 256 MBytes 40 256 MBytes 40 256 MBytes 40 256 MBytes 40. 32 Command and Address Signal Input Setup Time .. Tags: HYMD564M646C |
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First line: HYMD216M646DL(P)6-D43/J/K/H SERIAL PRESENCE DETECT -D43 Byte Function described Function support Abstract: .. 30 Minimum active to precharge time tRAS 40 ns 28 42 ns 2A 45 ns 2D 45 ns 2D. 31 Module row density 128 MBytes 20 128 MBytes 20 128 MBytes 20 128 MBytes 20. 32 Command and Address Signal Input Setup Time .. Tags: HYMD216M646DL |
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First line: HYMD232M646D(P)8-D43/J/K/H SERIAL PRESENCE DETECT -D43 Byte Function described Function support Abstract: .. 30 Minimum active to precharge time tRAS 40 ns 28 42 ns 2A 45 ns 2D 45 ns 2D. 31 Module row density 256 MBytes 40 256 MBytes 40 256 MBytes 40 256 MBytes 40. 32 Command and Address Signal Input Setup Time .. Tags: HYMD232M646D |
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First line: HYMD512M646B(P)F8-D43/J/K/H SERIAL PRESENCE DETECT -D43 Byte Function described Function support Abstract: .. 30 Minimum active to precharge time tRAS 40 ns 28 42 ns 2A 45 ns 2D 45 ns 2D. 31 Module row density 512 MBytes 80 512 MBytes 80 512 MBytes 80 512 MBytes 80. 32 Command and Address Signal Input Setup Time .. Tags: HYMD512M646B |
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First line: HYMD532M646C(P)6-D43/J/K/H SERIAL PRESENCE DETECT -D43 Byte Function described Function support Abstract: .. 30 Minimum active to precharge time tRAS 40 ns 28 42 ns 2A 45 ns 2D 45 ns 2D. 31 Module row density 256 MBytes 40 256 MBytes 40 256 MBytes 40 256 MBytes 40. 32 Command and Address Signal Input Setup Time .. Tags: HYMD532M646C |
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First line: HYMD512M646CF(P)8-D43/J/K/H SERIAL PRESENCE DETECT -D43 Byte Function described Function support Abstract: .. 30 Minimum active to precharge time tRAS 40 ns 28 42 ns 2A 45 ns 2D 45 ns 2D. 31 Module row density 512 MBytes 80 512 MBytes 80 512 MBytes 80 512 MBytes 80. 32 Command and Address Signal Input Setup Time .. Tags: HYMD512M646CF |
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First line: AAT8543 threshold MOSFET designed battery, cell phone, markets. Using AnalogicTechTM's ultra high density MOSFET process space saving small outline J-lead package, performance superior that normally found TSOP-6 footprint been squeezed into footprint SC70 package. AAT8543 Abstract: .. RDS ON Drain-Source ON-Resistance 2 VGS=-4.5V, ID=-4.2A 45 57 mΩ VGS=-2.5V, ID=-3.1A 80 104ID 104ID ON On-State Drain Current 3 VGS=-4.5V, VDS=-5V Pulsed -20 AVGS th Gate Threshold Voltage .. Tags: 8543 AAT8543 |
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First line: TAIWAN COMPLIANC HS2AA HS2MA AMPS. High fficient Surface Mount Rectifiers SMA/DQ-214AC Abstract: .. U 2Û 45 05  0 105 120 140 PEHi;SMTO=l<ATE.>PSW -E>.<E-tt= WXTAVE. Flfà ̄.5- TYPICAL INSTANTANEOUS I WiXWPVULWrL.M FIG.4- TYPICAL JUNCTION CAPACITANCE à . Û.S †2 -. 10 2C 50 -X xa C05 1C05 1C05 .. Tags: datasheet abstract.. |
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First line: -20V, -5.4A, Rds(on)=65itiQ @Vgs=-4.5V. Rds(on)=1 OOmQ @Vgs=-2.5V. Super high dense cell design extremely Rds(on). High power current handing capability. Surface Mount Package. SO-8 Abstract: .. 250|iA -0.6 V Drain-Source On-State Resistance Rds on> Vgs=-4.5V, Id=-5.2A 45 65 mQ Vgs=-2.5V, Id=-4.5A 90 100 mQ On-State Drain Current Idion Vds=-5V, Vgs=-4.5V -20 A Forward Transconductance .. Tags: datasheet abstract.. |
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First line: 2N4048 2N35 2N2553 2n333 2N2152 DIODE TRANSISTOR HflMfiBSS OOGOCHB T'^-fcA GERMANIUM HIGH POWER TRANSISTORS DEVICES DEVICES DEVICES DEVICES DEVICES 2N58A R173 2N629 2N2144A /2N2612 2N5436 2N143/13 T013 2N630 2N2145A 2N2833 5437 2N174A T036 2N665 2N2146A 2N2834 "X2N5438 2N277 T036 X2N669 2N2152 Abstract: .. 220 1.055 .520 .065 .465 .003 .240 .710 .120 8-32N 8-32N .G.2A 45" .230 1.065 .540 .085 .485 .008 .260 .730 .130 T72a T72a .225 1.00 MIN .390 MAX .005 .195 .640 .11$ 8-Ì2UNÙ24THD 24THD 4b' ,010 T72b T72b .120 .358 .220 .008 .. Tags: 2N2152 2n333 2N2553 2N35 2N4048 datasheet abstract.. |
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First line: 2314 sot-23 APM2314 Abstract: .. VGS=4.5V , IDS=1.2A 45 60. RDS ON a. Drain-Source On-state. Resistance VGS=2.5V , IDS=0.8A 55 80. mΩ. VSD a. Diode Forward Voltage ISD=0.5A , VGS=0V 0.75 1.3 V. Dynamicb. Qg Total Gate Charge 6.5 9. Qgs Gate .. Tags: 2314 sot-23 2314 mosfet APM2314 |
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First line: D3055L* D3055* DU/D3055L2 hannel nhancement Mode Field ffect Trans Abstract: .. V G S 2.5V, ID 5.2A 45 70. O n-S tate Drain C urrent ID O N V DS = 5V, V G S = 4.5V 20. 17. A. S F orward Trans conductance F S g V DS 10V, ID 6.0A. DY NAMIC C HAR AC T E R IS T IC S c. Input C apacitance C IS S. C R S S. C O S S O utput .. Tags: D3055L* D3055* D305* DU D3055L2 |
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First line: LAMBDA SWITCHING REGULATORS DC-TO-DC MICROCONVERTER Complete DC-to-DC converter minimum efficiency 70kHz switching frequency Programmable output voltage from Volts Abstract: .. 5.30 Volts Line Regulation1 REG line 12V to 35V 90 mV Load Regulation1 REG load 0.2A to 2A 45 mV System Efficiency -25 to 125Â C 70 75 % Switching Frequency 'sx 50mA 50mA 58 70 86 kHz Quiescent Current .. Tags: datasheet abstract.. |
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First line: DU/D3055L2 amHop Microelectronics orp. Augus 2002 hannel nhancement Mode Field ffect Trans Abstract: .. V G S 2.5V, ID 5.2A 45 70. O n-S tate Drain C urrent ID O N V DS = 5V, V G S = 4.5V 20. 17. A. S F orward Trans conductance F S g V DS 10V, ID 6.0A. DY NAMIC C HAR AC T E R IS T IC S c. Input C apacitance C IS S. C R S S. C O S S O utput .. Tags: DU D3055L2 |
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First line: AAT8543 AAT8543 threshold P-channel MOSFET designed battery, cell phone, markets. Using AnalogicTech's ultra-high-density MOSFET process space-saving, small-outline, J-lead package, performance superior that normally found TSOP-6 footprint been squeezed into footprint SC70JW-8 package. Abstract: .. RDS ON Drain-Source On-Resistance1 VGS = -4.5V, ID = -4.2A 45 57 mΩ VGS = -2.5V, ID = -3.1A 80 104ID 104ID ON On-State Drain Current1 VGS = -4.5V, VDS = -5V pulsed -20 AVGS th Gate Threshold Voltage .. Tags: AAT8543 |
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First line: ALAMBDA SWITCHING REGULATORS 6325P DC-TO-DC MICROCONVERTER Complete DC-to-DC converter minimum efficiency 70kHz switching frequency Programmable output voltage from Volts Abstract: .. Volts Line Regulation1 REG line 12V to 35V 90 mV Load Regulation1 REG load 0.2A to 2A 45 mV System Efficiency †n -25 to 125 C 70 75 % Switching Frequency fsx 50mA 50mA 58 70 86 kHz Quiescent Current .. Tags: datasheet abstract.. |
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First line: 03ME3D BOARD MOUNTING FILTERS Abstract: .. 02MP1 02MP1 2.5/2A 45 60 60 45 40 25. 02MP2 02MP2 2.5/2A 50 55 55 50 40 25. 03ME2 03ME2 3A 15 28 32 45 45 50. 03ME3 03ME3 3A 22 30 35 45 45 48. 03ME3B 03ME3B 3A 12 20 28 40 40 40. 03ME3D 03ME3D 3A 18 28 39 48 48 55. 03ME3DA 03ME3DA 3A 15 25 30 40 40 45. 03ME4 03ME4 /P 3A 30 40 40 35 .. Tags: 03ME3D datasheet abstract.. |
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First line: 03ME3D SERIES BOARD MOUNTING LTERS Abstract: .. 02MP1 02MP1 2.5/2A 45 60 60 45 40 25. 02MP2 02MP2 2.5/2A 50 55 55 50 40 25. 03ME2 03ME2 3A 10 15 20 35 40 40. 03ME3 03ME3 3A 22 30 35 45 45 48. 03ME3B 03ME3B 3A 12 20 28 40 40 40. 03ME3D 03ME3D 3A 18 28 39 48 48 55. 03ME3DA 03ME3DA 3A 15 25 30 40 40 45. 03ME4 03ME4 /P 3A 30 40 40 35 .. Tags: 03ME3D 02MP2 datasheet abstract.. |
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First line: STU/D3055L2 SamHop Microelectronics Corp. Feb.01 2005 ver1.3 N-Channel Logic Level Enhancement Mode Field Effect Transistor Abstract: .. V G S 4.5V, ID 5.2A 45. O n-S tate Drain C urrent ID O N V DS = 5V, V G S = 4.5V A. S F orward Trans conductance F S g V DS 10V, ID 6.0A. DY NAMIC C HAR AC T E R IS T IC S c. Input C apacitance C IS S. C R S S. C O S S O utput C apacitance .. Tags: STU D3055L2 |
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First line: FDC365P FDC365P P-Channel PowerTrench® MOSFET FDC365P P-Channel PowerTrench® MOSFET Abstract: .. rDS on Static Drain to Source On Resistance VGS = -10V -10V , ID = -4.2A 45 55. mΩ VGS = -4.5V, ID = -3.2A 70 80. VGS = -10V -10V , ID = -4.2A, TJ = 125 C 69 90. gFS Forward Transconductance VDS = -10V -10V , ID = -4.2A 8.7 S. Dynamic .. Tags: FDC365P FDC365P |
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First line: SEMTECH CORP DC-TO-DC MICROCONVERTER Military temperature range Complete DC-to-DC converter minimum efficiency Abstract: .. rEG UNE 12V to VIN MAX 90 mV Load Regulation1 REG LOAD 0.2A to 2A 45 mV System Efficiency Over Temp 70 75 % Switching Frequency 'sx 50mA 50mA 60 80 100 kHz Quiescent Current IQ V|N MAX OA 18 30 mA Peak .. Tags: datasheet abstract.. |
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First line: SAMSUNG SEMICONDUCTOR 7^145 0007^3 MJE172 EPITAXIAL SILICON TRANSISTOR FREQUENCY AMPLIFIER CURRENT, HIGH SPEED SWITCHING APPLICATION ABSOLUTE MAXIMUM RATINGS Characteristic Symbol Rating Unit Collector-Base Voltage Vcao -100 Collector-Emitter Voltage VcEO Emitter-Base Voltage Vebo Base Current Abstract: .. Iebo VaE=8V, Ic=0 100 nA DC Current Gain hFE VCE=1V, lc=500mA 500mA 70 VCE=1V, 1C=2A 45 180' Vce=2V, l0=5A 10 Collector-Emitter Saturation Voltage VcE sat lc=500mA 500mA , la=50mA 50mA 0.3 V lc=2A, l8=200mA 200mA .. Tags: datasheet abstract.. |
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First line: Receiver Circuit 2402 Bipolar Abstract: .. IFI-input impedance 2a 45 .. 90 11 12. LO2-input impedance 2b 180, 360 9 ‐ MO-output impedance 2c 45, 71 15 16. PMB 2402. Semiconductor Group 17. PMB 2402. Test Circuit 3. f W = wanted input signal from received .. Tags: SMD LO2B 2402* datasheet abstract.. |
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First line: A6062 Receiver Circuit 2401 Bipolar Abstract: .. IFI-input impedance 2a 45 .. 90 11 12. LO2-input impedance 2b 180, 360 9 ‐ MO-output impedance 2c 45, 71 15 16. PMB 2401. Semiconductor Group 17. PMB 2401. Test Circuit 3. f W = wanted input signal from received .. Tags: A6062 vogt transformer SMD LO2B neosid* Intermediate frequency transformer 2401 datasheet abstract.. |
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First line: 2N2553 transistor t05 2N2152 2N5887 t03 package transistor pin configuration CY7C1339 Supports 100-MHz operations with zero wait states Fully registered inputs outputs pipelined operation 128K common architecture 3.3V core power supply 2.5V 3.3V operation Fast clock-to-output times (for 166-MHz devi Abstract: .. 220 1.055 .520 .065 .465 .003 .240 .710 .120 8-32N 8-32N .C.2A 45" .230 1.065 .540 .085 .485 .008 .260 .730 .130 T72a T72a .225 1,00 MIN .390 MAX .005 .195 .640 .11$ 8-ä2UNC24THD 2UNC24THD 45' ,010 T72b T72b .120 .358 .220 .008 .. Tags: t03 package transistor pin configuration 2N5887 2N2152 transistor t05 2N2553 datasheet abstract.. |
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First line: LAMBDA 6325, 6425, 6525 DC-TO-DC MICROCONVERTERS Complete DC-to-DC converter minimum efficiency 70kHz switching frequency Programmable output voltage from volts Preset output voltage 5.05 Volts Current limit thermal shutdown 6325/6425/6525 switching regulator micro-hybrid circuit designed step-down Abstract: .. ' REGIUNEI 12V t0 VIN MAX 90 mV Load Regulation1 REG,loadi 0.2A to 2A 45 mV System Efficiency n -25 to 125X 125X 70 75 % Switching Frequency 'sx 50mA 50mA 58 70 86 kHz Quiescent Current lo VIN MAX OA 18 30 mA .. Tags: datasheet abstract.. |
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First line: Intermediate frequency transformer Mixer Preliminary Spezification Functional Description, Benefits: B6HF bipolar technology, 25GHz Reduced external components Frequency range 2.7-4.5V supply voltage Mixer current adjustable with external resistors Abstract: .. conversion mode Ml - Input Values for external circuitry Test Circuit f [MHz] L1 L2 C1 2a 45 tbd tbd tbd Semiconductor Group 9 6.95 ■ ÖE35b E35b ü5 007Ö244 172 ■ This Material Copyrighted By Its Respective .. Tags: Intermediate frequency transformer datasheet abstract.. |
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