| Fulltext Datasheet Results |
1 - 50 of about 208 for 2A-25 |
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First line: YUNPEN USA YUNPEN* YUNPEN YN-T9L2 SERIES Abstract: .. YN02T9L2 YN02T9L2 2A 25 46 50 58 47 38. DIFFERENTIAL MODE LINE TO LINE IN 50 OHM SYSTEM YN02T9L2 YN02T9L2 2A 25 46 50 67 62 48 .. Tags: YUNPEN* YUNPEN USA datasheet abstract.. |
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First line: 314 fuse ceramic fuses Miscellaneous Products Misc. Products Electronic Fuse Display Spare Fuse Cabinet Spare Fuse Cabinet Sturdy steel cabinet holds spare fuses. Cabinet locked prevent unauthorized access weather stripped reduce accumulation dust, dirt moisture. Convenient inventory card located in Abstract: .. 25 312 1⁄2A 25 313 1⁄2A 25 314 15A 25 326 8A. 50 312 1A 25 313 3⁄4A 25 314 20A 20 326 10A. 25 312 11⁄2A 25 313 1A 25 314 30A. 75 312 2A 25 313 11⁄2A. 25 312 2 1⁄2A 50 313 2A. 75 312 3A 25 313 21⁄2A. 25 312 4A 25 313 3A. 25 312 5A .. Tags: Part Numbering System littelfuse fuse selection Littelfuse glass free fuse fuse ceramic fuse 8A fuse 1a fuse 15a ceramic fuses 314 fuse 312 fuse 8A datasheet abstract.. |
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First line: Abstract: .. <-> 2 2!5 C2" 2A " 25. + "" 5!! < "25 5II "! 3"" " !"3 "25 533 "*C. 2 3 3 "CI *A3 .. Tags: datasheet abstract.. |
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First line: ELECTRONICS, INO- TI/CEPT/ISDN-PR Carrier Transformers EPA1064 thru EPA1070 Isolation TemninaJs Single Package Configuration Parametro 25*C Rari NunAer l-nM Uln.j Inlernv Abstract: .. EPA1à Éà 1.2a 25 Sa 1:1:1 1SÚÚ 7Ú .7Ú4.7Ü EPA1Ú6S 2.CB dJj sa 1:1:1 1S B 73 .70 EPA1Ü6Ö 1.2a 25 sa 1:1 15ÚÚ 7a ,7a EPA1ÜÖ7 1.2Ú .yrj 1CT:1 1SÚÚ 7a ,7a EPAiasa 1.2a 35 .arj .. Tags: datasheet abstract.. |
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First line: Drahtwiderstand Leistungswiderstand Watt Standardtoleranz Temperaturkoeffizient±20ppm/K Wicklung Widerstandwerte 0,01 260k vorkonfektionierbare Einsatzgebiete: sind betrachten sollten nicht vorrangig dazu eingesetzt werden aufzunehmen. Prinzipiell Temperaturen 350°C konstruiert, sollte un Abstract: .. UT-1/2A 25,0 6,4 2,0 0,5. UT-1A 25,0 10,3 2,4 0,5. UT-2A 25,0 12,7 4,8 0,8. UT-3 25,0 15,6 6,3 1,0. UT-5 25,0 22,2 8,0 1,0. UT-7 25,0 31,0 7,9 1,0. UT-10 UT-10 25,0 45,2 9,5 1,0. Parameter MIL-STD 202. Thermischer .. Tags: UT-1 2A UT-1A UT-2A |
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First line: SMD IC MARKING NC ic MARKING QG 8a smd Load Switching Applications KSS133 Abstract: .. RDS on 2 VGS = -2.5 V, ID = -2A 25 35. Input Capacitance Ciss 2900 pF. Output Capacitance Coss 570 pF. Reverse Transfer Capacitance Crss 370 pF. Turn-on Delay Time td on 27 ns. Rise Time tr See Specified .. Tags: 8a smd ic MARKING QG SMD IC MARKING NC KSS133 |
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First line: BESERIES FUSE CONNECTOR FILTERS Abstract: .. 2A 25 35 40 55 55 55. 4A 26 30 40 50 55 45. 4A S 26 30 40 50 55 45. 6A 20 30 35 50 55 45. 2A 6 15 25 40 45 45. 4A 6 15 25 .. Tags: 04BEEG3H datasheet abstract.. |
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First line: TA8056P m&itmss mfj) w'w-^-c, typ) ttiAl o/v^-y 5t'> TO-220 7-r/ om/m^m VoUT loUT Abstract: .. =-40~ + 110 C  œ £ fà ; VoUT OFF VoUT ON Fi Vo W=1A, Tc = 25'C Iout=2A, = 25"C. jM-ei-^iü tpLH tpHL i rtoujcr g * à i À" à 'cc -1.5 mA mV. V M A V fis - 17- TA8056P TA8056P r;'1;rnrHE, ~EE.l:I:f3lii 2A - . =' ://~ .. Tags: datasheet abstract.. |
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First line: FUSE CONNECTOR FILTERS Abstract: .. 2A 25 35 40 55 55 55. 4A 26 30 40 50 55 45. 4A S 26 30 40 50 55 45. 6A 20 30 35 50 55 45. 2A 6 15 25 40 45 45. 4A 6 15 25 .. Tags: datasheet abstract.. |
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First line: BB 298 Silicon Tuning Diode Extented frequency range GHz; special design TV-sat indoor units High capacitance ratio Type Marking Ordering Code (tape reel) Configuration Package1' white Q62702-B623 EHA07001 SOD-123 Abstract: .. 297 6235b05 6235b05 00bb710 00bb710 bll â– BB 813 Electrical Characteristics at 2a = 25 Â C, unless otherwise specified. Parameter Symbol Values Unit min. typ. max. Reverse current Vr = 30 V Vr = 30 V, TA = 85 'C In .. Tags: BB 298 datasheet abstract.. |
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First line: tip30c KSH30/30C EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE AMPLIFIER SPEED SWITCHING APPLICATIONS D-PACK SURFACE MOUNT APPLICATIONS Load Formed Surface Mount Application Suffix) Straight Lead (I.ACK, Suffix) Electrically Similar Popular TIP30 TIP30C Characteristic Symbol Rating Unit Collector Bas Abstract: .. - 20 HA Emitter Cutoff Current Iebo Vbe=-5V, lc=0 - 1 mA * DC Current Gain hFE VCE= - 4V, lc= - 0.2A 25 VCE = - 4V, lc=- 1A 10 70 * Collector Emitter Saturation Voltage VcE sat lc= - 1 A, lB= - 125mA 125mA - 0.7 V .. Tags: tip30c datasheet abstract.. |
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First line: DS2012 DALLAS CORP SIDE DALLAS T-W-35- DS2012 4096x9 FIFO Chip First-in, first-out memory-based architecture Abstract: .. dec 13 16 ■Q4 gndC 14 15 ■R D2Ü D1[ DO [ san m = Q0[ ■qiQ NC[ Q2[ sssà lss 2 26 27 2 25 24 23 22 telali 06 Txrnonncr D6 Qd7 ] NC ] FÖBT ]HB ] XO/HF ]Q7 26-Pln 26-Pln DIP 600 Mil Se Mech. Drà nung Sect .. Tags: datasheet abstract.. |
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First line: 2SD389, 2SD389A, 2SD390, 2SD390A 2SD389, 2SD389A, 2SD390, 2SD390A 'jn> Diffused Junction Mesa Power Amplifier it/Features fi'^k 'o/Large collector dissipation A*>U;i^/Wide area safe operation 2SD390,2SD390A 7-xCDgg^t nj)|g0 With lead wire forming, fits type. Abstract: .. J. i „ fi ggfPlE VcEfsat Io = 2A, Ib = 0.4A 1.0 V L^rrS^S ^are VCE = 10V, Ic = 0.2A 25 kHz * hFE2 y y i> # i/hFE2 Classifications ^FE2 30-60 50~100 80~160 Q P O 482 250389, 250389A 250389A , 250390, 250390A 250390A .. Tags: datasheet abstract.. |
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First line: WATT DC-DC CONVERTERS Abstract: .. 2A-25. 2A-31 2A-31 . 2A-32 2A-32 . 2A-33 2A-33 . 2A-34 2A-34 . 2A-35 2A-35 . 2A-41 2A-41 . 2A-42 2A-42 . 2A-43 2A-43 . 2A-44 2A-44 . 2A-45 2A-45 . 1.5 WATT DC-DC CONVERTERS .. Tags: datasheet abstract.. |
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First line: Abstract: .. 2A-25. 2A-31 2A-31 . 2A-32 2A-32 . 2A-33 2A-33 . 2A-34 2A-34 . 2A-35 2A-35 . 2A-41 2A-41 . 2A-42 2A-42 . 2A-43 2A-43 . 2A-44 2A-44 . 2A-45 2A-45 . 1.5 WATT DC-DC CONVERTERS 2 A 2 .. Tags: datasheet abstract.. |
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First line: 3tf48 3TF50* 3TF46 SIEMENS 3TF47 contactor siemens contactor 3TF34 MOTOR CONTROLLER FUSE SELECTION TABLE TYPE PROTECTION VERIFIED) MAXIMUM THREE PHASE MOTOR HORSEPOWER 200V(FLC) 230V(FLC) 460V(FLC) 575V(FLC) PROTECTION .5(2.2) .5(1.1) .75(1.6) 1(2.1) 1.5(3.0) 2(3.4) 3(4.8) 3(4.8) 5(7.6) 5(7.6) 7.5(1 Abstract: .. 5 15.2 10 14.0 3TF32 3TF32 /42 3UA5200-2A 3UA5200-2A 25 25 30. 5 17.5 3TF32 3TF32 /42 3UA5200-2B 3UA5200-2B 30 30 30. 7.5 22.0 15 21.0 3TF33 3TF33 /43 3UA5200-2C 3UA5200-2C 40 40 30. 7.5 25.3 10 28.0 20 27.0 3TF34 3TF34 /44 3UA5500-2D 3UA5500-2D 50 50. 10 32 .. Tags: SIEMENS 3TF47 contactor 3TF46 3TF50* siemens contactor 3TF34 CIRCUIT AND DATA SHEET siemens contactor 3TF34 siemens contactor siemens 3tf56 siemens 3tf48 scr D106 3UA66* 3UA62* 3UA6000-2X* 3UA58* 3ua55* datasheet abstract.. |
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First line: sanken airpax 5003 SANKEN 5003-F sanken airpax Thermostat Airpax Series 5003 Airpax 5003 SI-8000B Series Switching Voltage Regulator Wide input voltage -55V) High power conversion efficiency (91% SI-8243B) Precise setting voltage SI-8053B) Output power control external components High-reliability Abstract: .. 25-35V 25-35V 2A mV 30V 0.5-3.0A 30V O.5-3.0A 30V O.5-3.0A 30V 0.5-3.0A 40V 0.5-3.QA 25-35V 25-35V 2A 25-35V 25-35V 2A 25-35V 25-35V 2A 35-45V 35-45V 2A. .r-.--r--<> 6 Case co, RO Cl. : External capacitor and resistor for self .. Tags: Airpax 5003 Thermostat Airpax Series 5003 sanken airpax SANKENã5003-F sanken airpax 5003 datasheet abstract.. |
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First line: 2SD287A 2SD78A 2sd587a ELECTRICIANS OVERSEAS HBrSliSIXSIftlSK (New Trnsistor Mnul) lists trnsistors registered Electronic Industries Assocition (EIAJ), rrnged mnner look will full provided mnul referring Jpnese-Englis trnsltion given below. (T~25'o (t^zs'c}:--'. (Me) (mA) <mW) (PF)' Abstract: .. 2SB546A 2SB546A H *  l'A Si.T 200 - 5 -2A 25 W Tc=25'C 150 -50 -150 90 -10 -400 -10 j 400 5 *i 268 2SD401A 2SD401A  a y-r g  547A 547A    - 200 - 5 — 2A 25 W T'c-25 c-25 'C 150 -50 -150 90 - 10 -400 -10 400 5 * 267 2SD402A 2SD402A  3 .. Tags: 2sd587a 2SD78A 2SD287A datasheet abstract.. |
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First line: BD533/535/537_NPN EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LINEAR SWITCHING SATURATION VOLTAGE Complement BD534, BD536 BD538 respectively Characteristic Symbol Rating Unit Collector Emitter Voltage BD533 VcBO BD535 Abstract: .. hFE Vce = 5V, lc= 10mA 10mA 20 : BD537 BD537 15 : ALL DEVICE Vce=2V, lc= 500mA 500mA 40 : BD533 BD533 /535 Vce=2V, lc=2A 25 : BD537 BD537 15 hFE Groups J : ALL DEVICE h fe Vce = 2V, lc=2A 30 75 Vce = 2V, lc=3A 15 K : ALL DEVICE Vce = 2V, lc=2A .. Tags: datasheet abstract.. |
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First line: NPN transistor collector base and emitter BD439/441 EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LINEAR SWITCHING APPLICATIONS Complement BD440, BD442 respectively Characteristic Symbol Rating Unit Collector Base Voltage BD439 VcbO BD441 Collector Emitter Voltage BD439 VcES BD441 Abstract: .. = 10mA 10mA 20 130 BD441 BD441 15 130 BD439 BD439 Vce=1V, lc= 500mA 500mA 40 140 BD441 BD441 40 140 BD439 BD439 Vce = 1V, lc=2A 25 BD441 BD441 15 * Collector Emitter Saturation Voltage VcE sat lc = 2A, Ib= 0.2A 0.8 V * Base Emitter On Voltage .. Tags: NPN transistor collector base and emitter datasheet abstract.. |
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First line: CSD401 CSD401 PLASTIC POWER TRANSISTOR Complementary CSB546 Vertical Deflection Output Applications CONFIGURATION BASE COLLECTOR EMITTER Abstract: .. 200 V 150 V 2A 25 W ISO C VCEsat max. min. max. 1.0 V 40 hFE 400 RATINGS at TA=25 C .. Tags: datasheet abstract.. |
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First line: CSB56 CSB56 PLASTIC POWER TRANSISTOR Complementary CSD01 Vertical Deflection Output CONFIGURATION BASE COLLECTOR EMITTER COLLECTOR Abstract: .. 200 V 150 V 2A 25 W 150 OC 1.0 V VCEsat hFE 40 240 RATINGS at TA=25 C unless otherwise specified limiting values Collector-base voltage open emitter Collector-emitter voltage open .. Tags: datasheet abstract.. |
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First line: nte7071 NTE7071 Integrated Circuit Dual, Full-Bridge Driver Description: NTE7071 high voltage, high current, dual, full-bridge driver 15-Lead Staggered type package designed accept standard logic levels drive inductive loads such relays, solenoids, stepping motors. enable inputs provided enable disa Abstract: .. Commutation Frequency fc Vi IL = 2A − 25 40 kHz. Source Current Turn−Off Delay T1 Ven 0.5 Ven to 0.9 IL, Note 2 − 3 − μs. Fall Time T2 Ven 0.9 IL to 0.1 IL, Note 2 − 1 − μs. Turn−On Delay T3 Ven 0.5 Ven to .. Tags: nte7071 NTE7071 |
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First line: FLAT CHIP METAL THIN FILM PRECISION RN73 Abstract: .. 0805 RN73 RN73 2A 25 0.1 W 100 V 200 V 51 Ω .. 100 kΩ 15 Ω .. 1 MΩ 15 Ω .. 1 MΩ 10 Ω .. 1 MΩ 10 Ω .. 1 MΩ. 10 100 Ω .. 100 kΩ 100 Ω .. 100 kΩ 100 Ω .. 100 kΩ 100 Ω .. 100 kΩ 100 Ω .. 100 kΩ. 5* 100 Ω .. 100 kΩ 100 Ω .. 100 .. Tags: datasheet abstract.. |
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First line: DFG1E high speed switching. Diffused-junction. Glass passivated encapsulated. Abstract: .. Reverse Recovery Time trr ns - -35 IF=0.1A, Irp=0.2A, 25% Recovery. Rth j-a 80 Steady State Thermal Impedance Rth j-l C/W - -50 Lead length = 10 mm. Unit in mm inch Weight: 0.35 g 5MAX 0.2 .. Tags: DFG1E |
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First line: METAL THIN FILM PRECISION HIGH HEAT RESISTANT RN73H Ceramicsubstrate NiCrThinfilm Toptermination(CrNiCu) Bottomtermination(CrNiCu) Endtermination(NiCr) Specialprotectivecoating NiBarrier SolderPlating(sn) Abstract: .. 0805 RN73H RN73H 2A 25 0.125 W* 100 V 200 V 51 Ω .. 100 kΩ 15 Ω .. 100 kΩ 15 Ω .. 100 kΩ 10 Ω .. 100 kΩ 10 Ω .. 100 kΩ. 10 100 Ω .. 100 kΩ 100 Ω .. 100 kΩ 100 Ω .. 100 kΩ 100 Ω .. 100 kΩ 100 Ω .. 100 kΩ. 5 100 Ω .. 100 kΩ .. Tags: E192 RN73H |
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First line: SPN4850 DESCRIPTION SPN4850 N-Channel logic enhancement mode power field effect transistors produced using high cell density DMOS trench technology. This high density process especially tailored minimize on-state resistance. These devices particularly suited voltage application notebook computer pow Abstract: .. Forward Transconductance gfs VDS=15V,ID=6.2A 25 S. Diode Forward Voltage VSD I S=1.7A,VGS =0V 0.8 1.2 V. Dynamic. Total Gate Charge Qg 25 30. Gate-Source Charge Qgs 4.2. Gate-Drain Charge Qgd. VDS=30V .. Tags: SPN4850 |
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First line: R706 Dual Power Rectifiers R702-R7 Baseplate A=Common Anode Baseplate Common Cathode Abstract: .. = 150" C I FM = 15A: = 25 C I Ft.4 = 15A: J = 25 C' VRRM,TJ = 25 C VRRM,TJ = 150"C IF = 1A,IR = 2A, 25 C'. B. 'Pulse test: Pulse width 300 psec. Duty cycle 2% Thermal and Mechanical Characteristics Storage .. Tags: R706 datasheet abstract.. |
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First line: DFG1E high speed switching. Diffused-junction. Glass passivated encapsulated. Abstract: .. Reverse Recovery Time trr ns - -35 IF=0.1A, Irp=0.2A, 25% Recovery. Rth j-a 80 Steady State Thermal Impedance Rth j-l C/W - -50 Lead length = 10 mm. Unit in mm inch Weight: 0.35 g 5MAX 0.2 .. Tags: DFG1E |
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First line: METAL THIN FILM, PRECISION HIGH HEAT RESISTANT RN73H TYPE RN73H RN73H RN73H marking T.C.R ppm/K Black COATING COLOR MARKING None Yellow, digits (E24)* None (E96) Yellow, digits* Abstract: .. 0805 RN73H RN73H 2A 25 0.125 W 100 V 200 V 51 Ω .. 100 kΩ 15 Ω .. 750 kΩ 15 Ω .. 750 kΩ 10 Ω .. 750 kΩ 10 Ω .. 750 kΩ. 10 100 Ω .. 100 kΩ 100 Ω .. 100 kΩ 100 Ω .. 100 kΩ 100 Ω .. 100 kΩ 100 Ω .. 100 kΩ. 5 100 Ω .. 100 kΩ 100 .. Tags: RN73H |
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First line: FLAT CHIP METaL THIn FILM PRECISIOn Rn73 Abstract: .. 0805 Rn73 Rn73 2a 25 0.1 W 100 V 200 V 51 Ω .. 100 kΩ 15 Ω .. 1 MΩ 15 Ω .. 1 MΩ 10 Ω .. 1 MΩ 10 Ω .. 1 MΩ. 10 100 Ω .. 100 kΩ 100 Ω .. 100 kΩ 100 Ω .. 100 kΩ 100 Ω .. 100 kΩ 100 Ω .. 100 kΩ. 5* 100 Ω .. 100 kΩ 100 Ω .. 100 .. Tags: RN73 |
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First line: a'yiY *f37^'T^CD d-ba i/yf [^/Jl^iv, Abstract: .. J 2J 2.3 2 25 LS 2.7 21. .V 1 i. '.. o ;7' -mw'/--' // // // 4Jr †" -O / // // 7. X //, ■V^K // // NQ13A6 NQ13A6 .. Tags: datasheet abstract.. |
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First line: DWN.: CHK.: APP.: DATE: Dct-D1 DATE:Qet-01 DATE:Qct-D1-04 XFMRS XFHCL2 vrww Abstract: .. 14.2 2.24 XFHCL2-2R0H 3.5Â 30% 2.0Â 30% 10.7 8.7 12.5 3.30 XFHCL2-3R2H 4.8Â 25 % 3.2Â 25% 8.6 7.1 10.8 4.92 XFHCL2-4R6H 6.6+25% 4.6Â 25% 7.3 6.0 9.3 6.48 XFHCL2-BR4H 8.3+25% 6.4+25% 6.2 5.2 .. Tags: datasheet abstract.. |
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First line: STN4850 STN485 Channel Enhancement Mode MOSFET 7.2A DESCRIPTION STN4850 N-Channel logic enhancement mode power field effect transistor which produced using high cell density, DMOS trench technology. This high density process especially tailored minimize on-state resistance. These devices particularl Abstract: .. gfs VDS=15V,ID=6.2A 25 S. Diode Forward Voltage VSD IS=1.7A,VGS=0V 0.8 1.2 V. Dynamic Dynamic Dynamic Dynamic. Total Gate Charge Qg. VDS=30V,VGS=10V ID≡6A. 25 30. nC. Gate-Source Charge Qgs 4.2. Gate .. Tags: marking sop-8 STN4850 |
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First line: HD84A ISKRA SEMIC CAPS ODDina Gtif i^pl i%tl Urrm Ursm Ifav Ifsm Type ^casa Urrm T-H3 1N1341 1N1342B 1N1344B 1N1346B Abstract: .. 57 w i Ã3 Ã3 Ã3 Ã3 o Ã3 Ã3 Ã3 I 23456789 HD84 HD84 /87 A-8 diodes with common anodes  i là 25 2à 25 2i'ti à i Oà ́à ́à ́à ́à ́ooi 1 2 3 4 5 6 7 8 9 HD84 HD84 /87A-8 87A-8 diodes with common cathodes Note: Version with 7 diodes .. Tags: HD84A datasheet abstract.. |
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First line: Dual Power Rectifiers R702-R716X Baseplate A=Common Anode Baseplate Common Cathode Abstract: .. = 150"C I FM = 15A: ~ = 25 C' I FM = 15A: J = 25 C VRRM,TJ = 25 C VRRM,TJ = 150"C IF = 1A,IR = 2A, 25 C' 'Pulse test: Pulse width 300 ,tJsec. Duty c}'Cle 2% Thermal and Mechanical Characteristics Storage .. Tags: datasheet abstract.. |
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First line: TOSHIBA {DISCRETE/OPTO} 9097250 TOSHIBA <DISCRETE/OPTO) SILICON CHANNEL TYPE <7g-M0S) HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS. SWITCHING REGULATOR, DC-DC CONVERTER MOTOR DRIVE APPLICATIONS. High Breakdown Voltage V(br)dss=400V High Forward Transfer Admittance lYfs]=2.5S (Typ.) Leakage Abstract: .. Vds=10V, VGs=0, f=lMHz - 180 250 pF Switching Time Rise Time tr ID=2A - 25 50 ns Turn-on Time ton -LUV I . viN m T - ■VJU 1  -U-  à rà li si i VXN : tr > tf <5 no VDEr= OOV D.U^l % Z0UT=5 ft - 40 80 ns Fall .. Tags: datasheet abstract.. |
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First line: TC9172P TC9174P TC9174P* tc9174* TC9302AF-008 DIGITAL TUNING SYSTEM OOUTLINE SYSTEM TC9302AF-008 compose high efficiency digital tuning system combination with TC9172P, LSI. TC9302AF-008 selected receiving frequency bands FM/MW, FM/MW/LW, SW2/SW1/FM/MW, most suitable apply home-stereo. Unit JEDEC TO Abstract: .. ÃTM O SW FM U U.U.U & MHz D U memory TUNED MUTING 12344078 9 10 11 12 13 14 It 1 W 18 19 20 21 22 23 2 25 24 27 iUJ 29 O HATTKflx TC9302 TC9302 AF-008 AF-008 IIIHI FLAT PACKAGE  0 PIK BS POnllI NO TOP VIEW RkU 1—o POWUl .. Tags: tc9174* TC9174P* TC9174P TC9172P datasheet abstract.. |
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First line: ELM14801AA Dual P-Channel Enhancement Mode Power GENERAL DESCRIPTION ELM14801AA uses advanced trench technology provide excellent Rds<on>, gate charge operation with gate voltages 2.5V. This device suitable load switch applications. used common drain arrangement form bidirectional blocking swi Abstract: .. o | 1.4  1.2 ■o a N 0.8 l0=-5A J Vgs=-10V -10V OX/ \ VGS Ip =-2.5V =-2A 25 50 75 100 125 150 175 Temperature  C Figure 4: On-Resistance vs. Junction Temperature 190 170 150 130 a  110 z o 90 co ce. 70 50 30 .. Tags: datasheet abstract.. |
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First line: B0440 transistor BD 140 b0442 BD440/442 MEDIUM POWER LINEAR SWITCHING APPLICATIONS Complement BD439, BD441 respectively Characteristic Symbol Rating Unit Collector Base Voltage VcbO Collector Emitter Voltage VcES Abstract: .. =- 10mA 10mA 20 140 BD442 BD442 15 140 BD440 BD440 Vce = - 1V, lc=-500mA -500mA 40 140 BD442 BD442 40 140 BD440 BD440 Vce = - 1V, lc=-2A 25 BD442 BD442 15 * Collector Emitter Saturation Voltage VcE sat lc = -2A, lB=- 0.2A - 0.8 V * Base Emitter On .. Tags: b0442 transistor BD 140 B0440 datasheet abstract.. |
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First line: TRANSISTOR BD538 BD534/536/538 EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LINEAR SWITCHING SATURATION VOLTAGE Complement BD533, BD535 BD537 respectively Characteristic Symbol Rating Unit Collector Emitter Voltage BD534 VcbO BD536 Abstract: .. = - 5V, lc=- 10mA 10mA 20 : BD538 BD538 15 : ALL DEVICE Vce =-2 V, lc = - 500mA 500mA 40 : BD534 BD534 /536 Vce=-2V, le = - 2A 25 : BD538 BD538 15 hFE G roups J : ALL DEVICE hFE Vce=-2V, le = - 2A 30 75 Vce = - 2V, lc=-3A 15 K : ALL DEVICE Vce = -2V .. Tags: TRANSISTOR BD538 datasheet abstract.. |
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First line: TIP48 PANASONIC INDL/ELEK -CIC> Silicon Power Transistors TO-220 Package b^aaasE odicimb? T-33 Absolute Maximum Ratings Symbol T1P47 TIP48 TIP49 TIP50 Linit Collector-Base Voltage VCBO Collector-Emitter Voltage VCEO Abstract: .. , 1c=0 VCE=10V, 1c=0.3A 30 Vce=10V, Ic=1A 10 Vce=10V, 1c=1A 1c=1A, Is=O.2A 25 Vce= 10V; 1c=0.2A, f=1kHz Vce=10V, 1c=0.2A, f=2MHz 5 1c=1A, IB1=100rnA 100rnA , -'s2=100rnA 100rnA -Vae off =5V, RL=2000. 400 .. Tags: TIP48 datasheet abstract.. |
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First line: DFG1E high speed switching. Diffused-junction. Glass passivated encapsulated. Abstract: .. Reverse Recovery Time trr ns - -35 IF=0.1A, Irp=0.2A, 25% Recovery. Rth j-a 80 Steady State Thermal Impedance Rth j-l C/W - -50 Lead length = 10 mm. Unit in mm inch Weight: 0.35 g 5MAX 0.2 .. Tags: DFG1E |
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First line: Rotary Potentiometers 12mm Size Insulated Shaft Encoder Insulated shaft type provided with push-on switch suitable variety applications. Abstract: .. 1B 20 2A 25. 5 7 7 12 12 30 30. 3.5. 4.5 ø6. 1. 3.5. 2. 5.5 LB. LM1. Mounting surface. L1. ‘ y With bushing type. .. Tags: Rotary Encoder Switch 12mm Rotary Encoder switch datasheet abstract.. |
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First line: TR6010 TY2010 TY6010* TY6010 TY6008 types Valeurs limites Absolute max. ratings Electrical characteristics lamb Boitier Case VDWM vrwm vrsm 'tsm (10ms) (mA) (mA) |rm@ VDWM vrwm (mA) ((is) <|LCs) dV/d, VDWM (V/Ms) di/dt (A//Hs) (rms) tcaie t(Vj) 35A2s TftT lT=6A T(vj) ty1008 ty2008 ty3008 ty4008 t Abstract: .. 100 200 300 400 500 600 75 150 300 400 500 600 700 100 100 100 100 100 100 100 3* 40* 60* 2* 2* 2 25* 200* †to220ab to220ab 16 A eff rms / tcase = 75 C t vj = 125 C l2t = 120A2s 120A2s 'tm = 30a T vj = 125 .. Tags: TY6008 TY6010 TY6010* TY2010 TR6010 datasheet abstract.. |
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First line: AAT8543 threshold MOSFET designed battery, cell phone, markets. Using AnalogicTechTM's ultra high density MOSFET process space saving small outline J-lead package, performance superior that normally found TSOP-6 footprint been squeezed into footprint SC70 package. AAT8543 Abstract: .. • V DS MAX = -20V -20V • I D MAX 1 = -4.2A @ 25 C • Low RDS ON : • 57 mΩ @ VGS = -4.5V. • 104 mΩ @ VGS = -2.5V. SC70JW-8 SC70JW-8 Package. D D D D. S S S G. Top View. 1 2 3 4. 8 7 6 5. AAT8543 AAT8543 . 20V P-Channel Power MOSFET. Absolute Maximum Ratings .. Tags: 8543 AAT8543 |
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First line: 121086-0080 CIT-F80-16* cet-F80-16 Industrial Connectors CA-COM COM-7/0300 CA-COM Abstract: .. CA00COM-F24- CA00COM-F24- *-P* 1-1/2-18UNEF-2A 2-18UNEF-2A 25,4 1-7/16-18UNEF-2A 16-18UNEF-2A 9,5 20,6 4,0 59 34,9 44,5 3,7. CA00COM-F28- CA00COM-F28- *-P* 1-3/4-18UNS-2A 4-18UNS-2A 27,0 1-7/16-18UNEF-2A 16-18UNEF-2A 9,5 20,6 4,0 60 39,7 50,8 3,7. CA00COM-F32- CA00COM-F32- .. Tags: 121086-0080 endbell 5067 VG95234 VG 95234 G CATALOGUE vg 95234 assembly m4 214 ITT cannon CA- plug CIT-F80-16* cet-F80-16 cannon MIL-C-5015 CAN CIT-F80-16 CA-COM ca121003-1608 COM-7 0300 |
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First line: APM9966CO Abstract: .. Drain-Source On-state Resistance VGS=2.5V, IDS=5.2A 25 30. mΩ. VSD a Diode Forward Voltage ISD=1.7A, VGS=0V 0.8 1.3 V. Gate Charge Characteristics b. Qg Total Gate Charge 21.7 28. Qgs Gate-Source .. Tags: APM9966CO* APM9966CO |
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First line: 2SK2538 Silicon N-Channel Power F-MOS Features Avalanche energy capability guaranteed High-speed switching secondary breakdown Applications Abstract: .. Vds V 0 20 40 60 80 100 120 140 160 Ambient temperature Ta  C Vdd=30V Id=2A 25 50 75 100 125 150 175 Junction temperature Tj fC ID - Vds ID - Vqs RDS on - ID Tc=25"C Vgs = 10 ov g ov j u / lJ 8.0 J V \ ov \ 6 .. Tags: datasheet abstract.. |
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First line: SiLicon Generai. LINEAR INTEGRATED CIRCUITS ADVANCED DATA SG153/SG253/SG353 Performance data described herein represent design goals. Final design specifications subject change. HIGH CURRENT FIXED VOLTAGE REGULATORS SG153 family fixed-voltage, three-terminal regulators designed supply load currents Abstract: .. 25 C 10 = IA,25 C With Load: fo =5mA-2A, 25 C With Line: VIN = B-25V B-25V , 25 C V'N = 15-30V 15-30V , 25 C VIN = 18.5-30V 5-30V , 25 C 25 C V,N = 35V, 25 C Va = V!N = 35V, 25 C ViN = 8-1BV, 120Hz 120Hz sine, 25 C VIN = 15-25V 15-25V . 120Hz 120Hz .. Tags: datasheet abstract.. |
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