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1 - 50 of about 184 for 2A-15 |
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First line: NTE56 Silicon Transistor High Gain Switch Pass Regulator Absolute Maximum Ratings CollectorEmitter Abstract: .. Current Gain–Bandwidth Product fT VCE = 12V, IE = –0.2A – 15 – MHz .420 10.67 Max .500 12.7 Max .500 12.7 Min .250 6.35 Max .147 3.75 Dia Max .070 1.78 Max .100 2.54 Base Collector .. datasheet abstract.. |
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First line: HiTRON UNIVERSAL INPUT OPEN FRAME DUAL OUTPUT WATTS INTERNAL SWITCHING POWER SUPPLIES Abstract: .. HVI10.5D-033K 2.5A +3.3V 3.0A 0.2A 15.0V 1.0A/2.0A. HVI10.5D-050I 1.8A +5.0V 2.5A 0.2A 12.0V 1.0A/2.0A. HVI10.5D-050K 1.8A +5.0V 2.5A 0.2A 15.0V 1.0A/2.0A. Symbol: "ê" OVP built-in. "@" Adjustable .. datasheet abstract.. |
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First line: according MIL-C-5015 MS-6 / 0100 Contents General Information Shell Styles Technical Data Part number Abstract: .. MS3100R12-*P 3/4-20UNEF-2A 15,8 3,0 55 19,0 24,4 20,6 28,0 3,1. MS3100R14-*P 7/8-20UNEF-2A 15,8 3,0 55 19,0 29,0 23,0 30,0 3,1. MS3100R16-*P 1 -20UNEF-2A 15,8 3,0 55 19,0 31,5 24,6 32,5 3,1. MS3100R18 .. datasheet abstract.. |
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First line: Absolutes maximum ratings Ta=25ºC PartNumber VCBO VEBO 2SD701 2SD702 2SD703 2SD704 2SD705 Abstract: .. Tc=25oC 150 80 5 2A 15* 270 2SB705. 2SD745A 150 5 10A. 120W. Tc=25oC 150 80 5 2A 15* 270 2SB705A. 2SD745B 160 5 10A. 120W Tc-25oC 150 80 5 2A 15* 270 2SB705B. 2SD746 180 5 10A. 200W. Tc=25oC 150 80 5 2A 15 .. datasheet abstract.. |
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First line: Advanced Power Solutions UNIVERSAL INPUT OPEN FRAME DUAL OUTPUT WATTS INTERNAL SWITCHING Abstract: .. APS10.5VID-033K 2.5A +3.3V 3.0A 0.2A 15.0V 1.0A/2.0A. APS10.5VID-050I 1.8A +5.0V 2.5A 0.2A 12.0V 1.0A/2.0A. APS10.5VID-050K 1.8A +5.0V 2.5A 0.2A 15.0V 1.0A/2.0A. Symbol: "# " OVP built-in. "@" Adjustable .. datasheet abstract.. |
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First line: NTE105 Germanium Transistor Audio Power Description NTE105 germanium power transistor TO36 type Abstract: .. Rise Time tr VCE = 12V, IC = 12A, IB = 2A – 15 – μs. Fall Time tf VBE = 6V, IC = 0, RBE = 10Ω – 15 – μs. .520 13.2 Max. 10–32 UNF–2A. .190 4.83 .345 8.76 .312 7.93 Collector/Case. 1.005 25.55 Dia Max. 1.250 .. datasheet abstract.. |
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First line: NTE2539 Silicon Transistor High Voltage High Speed Switch Features High Breakdown Voltage Abstract: .. DC Current Gain hFE VCE = 5V, IC = 3.2A 15 – 50. VCE = 5V, IC = 16A 10 – – VCE = 5V, IC = 10mA 10 – – Collector–Emitter Saturation Voltage VCE sat IC = 16A, IB = 3.2A – – 0.8 V. Base–Emitter Saturation Voltage .. datasheet abstract.. |
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First line: NTE2538 Silicon Transistor High Voltage High Current Switch Features High Breakdown Voltage Abstract: .. DC Current Gain hFE VCE = 5V, IC = 3.2A 15 – 50. VCE = 5V, IC = 16A 10 – – VCE = 5V, IC = 10mA 10 – – Collector–Emitter Saturation Voltage VCE sat IC = 10A, IB = 2A – – 0.8 V. Base–Emitter Saturation Voltage VBE .. datasheet abstract.. |
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First line: NTE1936 Integrated Circuit Positive Voltage Regulator Features Plastic Package TO3P Only Output Abstract: .. DC Input Voltage VIN IO = 2A 15 – 35 V. Output Voltage VO VIN = 19V, IO = 0.5A 11.8 12.0 12.2 V. Output Current IO 0 – 2 A. Line Regulation ∆ VLINE VIN = 16V to 22V, IO = 0.5A – 10 30 mV. Load Regulation ∆ VLOAD VIN = 19V .. datasheet abstract.. |
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First line: ASQ28S02150 DC-DC Converter Data Sheet Input Output Features RoHS lead solder exemption Abstract: .. ASQ28S02150 DC-DC Converter Data Sheet 18 to 45 VDC Input; 2A, 15 VDC Output. Applications • Telecommunications • Data communications • Wireless communications • Servers, workstations. Benefits .. datasheet abstract.. |
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First line: NTE2594 Silicon Transistor High Voltage High Current Switch Features High Breakdown Voltage Abstract: .. DC Current Gain hFE VCE = 5V, IC = 1.2A 15 – 50. VCE = 5V, IC = 6A 8 – – Gain Bandwidth Product fT VCE = 10V, IC = 1.2A – 18 – MHz. Output Capacitance Cob VCB = 10V, f = 1MHz – 160 – pF. Collector–Emitter Saturation .. datasheet abstract.. |
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First line: Absolutes maximum ratings Ta=25ºC PartNumber VCBO VEBO 2SD201 2SD202 2SD203 2SD204 2SD205 Abstract: .. Tc=25oC 150 80 5 2A 15* 270 2SB539A. 2SD287B 200 7 10A. 100W. Tc=25oC 150 80 5 2A 15* 270 2SB539B. 2SD287C 200 7 10A. 100W. Tc=25oC 150 80 5 2A 15* 270 2SB539C. 2SD288 80 5 3A. 20W. Tc=25oC 150 100 5 500 35 .. datasheet abstract.. |
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First line: L6932 HIGH PERFORMANCE ULDO LINEAR REGULATOR INPUT VOLTAGE RANGE 200m Rdson MAX. Abstract: .. L6932D1.2 Load Regulation Vin = 3.3V; 0.1A < Io < 2A 15 mV. L6932D1.8 Load Regulation Vin = 3.3V; 0.1A < Io < 2A 15 mV. L6932D2.5 Load Regulation Vin = 3.3V; 0.1A < Io < 2A 15 mV. REFERENCE VREF=1.25V. CURRENT .. datasheet abstract.. |
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First line: L6932 HIGH PERFORMANCE ULDO LINEAR REGULATOR PRELIMINARY DATA INPUT VOLTAGE RANGE Rdson Abstract: .. L6932D1.2 Load Regulation Vin = 3.3V; 0.1A < Io < 2A 15 mV. L6932D1.8 Load Regulation Vin = 3.3V; 0.1A < Io < 2A 15 mV. * Guaranteed by design due to measurement problems. REFERENCE VREF=1.25V. CURRENT .. datasheet abstract.. |
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First line: Type Transistors Triple Diffused Planar Silicon Transistor 2SC4602 Features -00.1 TO-263 1.27-0.1 Abstract: .. Gain-Bandwidth product fT VCE = 10 V, IC =0.2A 15 MHz Output Capacitance Cob VCB=10V,f=1MHz 60 pF Collector-emitter saturation voltage VCE sat IC = 1.5 A, IB = 0.3A 2.0 V Base-emitter saturation .. datasheet abstract.. |
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First line: Sparkle Power Inc. Leading Power Supply manufacturer site www.sparklepower.com FSP700-62R01 For Pentium Abstract: .. +12V 0.2A 15.0A 18.0A ±5% ± 1% 120mV P-P. -5V 0.0A 0.3A ± 10% ± 2% 200mV P-P. -12V 0.0A 0.8A ± 10% ± 2% 200mV P-P. +5Vsb 0.0A 2.0 A ±5% ± 1% 50mV P-P. *+5V and +3.3V total output not exceed 220W *+12V and +3.3V total .. datasheet abstract.. |
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First line: Sparkle Power Inc. Leading Power Supply manufacturer site www.sparklepower.com ATX-350GU For Pentium Abstract: .. +3.3V 0.2A 15.15/20A ± 5% ± 1% 80mV P-P. +5V 2.0A 32/28.8A ± 5% ± 1% 60mV P-P. +12V 0.0A 16A ± 5% ± 1% 150mV P-P. -5V 0.0A 0.3A ± 10% ± 2% 120mV P-P. -12V 0.0A 0.8 A ± 10% ± 2% 150mV P-P. +5Vsb 0.0A 2.0 A ± 5% ± 1% 60mV P .. datasheet abstract.. |
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First line: MECHANICAL DATA Dimensions inches SEME 2N1618 SILICON TRANSISTOR Bipolar Power Transistor TO61 Abstract: .. h21E Static Forward Current Transfer Ratio VCE = 12V IC = 2A 15 75 -. VCEsat Collector-Emitter Saturation Voltage IC = 2A IB = 250mA 2. V. VBE Base-Emitter Voltage VCE = 12V IC = 2A 3. fT Transition Frequency .. datasheet abstract.. |
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First line: DPS-350NB Series FEATURES Complies with V1.1 Remote On / Off High Reliability Acoustic Noise Abstract: .. V3 +12V +/-5% 0.2A 15.0A 18.0A 120mV. V4 -12V +/-10% 0A 0.8A - 120mV. V6 +5Vsb +/-5% 0A 2.0A 50mV. V5 -5V +/-5% 0A 0.5A - 100mV. -. Output Voltage Regulation Minimum Maximum Peak Ripple & Noise Load Load Load .. datasheet abstract.. |
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First line: DPS-300KB-1 Series FEATURES Complies with V1.1 Remote On / Off High Reliability Acoustic Noise Abstract: .. V3 +12V +/-5% 0.2A 15.0A 18.0A 120mV. V4 -12V +/-10% 0A 0.8A - 120mV. V6 +5Vsb +/-5% 0A 2.0A 2.5A 50mV. V5 -5V +/-5% 0A 0.5A - 100mV. Output Voltage Regulation Minimum Maximum Peak Ripple & Noise Load Load .. datasheet abstract.. |
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First line: DPS-300GB-1 Series FEATURES Remote On / Off Acoustic Noise High Reliability Built-in Filter Meets Abstract: .. V3 +12V +/-5% 0.2A 15.0A 18.0A 120mV. V4 -12V +/-10% 0A 0.8A - 120mV. V6 +5Vsb +/-5% 0A 2.0A - 50mV. V5 -5V +/-5% 0A 0.3A - 100mV. Output Voltage Regulation Minimum Maximum Peak Ripple & Noise Load Load Load .. datasheet abstract.. |
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First line: MEDICAL GRADE HIGH ISOLATION TOROIDAL TRANSFORMERS QUAD PRIMARIES 100V 120V 220V 240V Abstract: .. 3750 31.2A 15.6A 10.5x4.9 267x124 MT3750DS. 65 29.5. 5000 41.6A 20.8A 11.6x5.4 295x137 MT5000DS. 78 35.4. 6250 52.0A 26.0A 12.0x5.6 305x143 MT6250DS. 90 40.8. 7500 62.5A 31.2A 12.0x5.5 305x140 MT7500DS .. datasheet abstract.. |
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First line: SPICE Device Model Si4971DY Vishay Siliconix Dual P-Channel 30-V D-S MOSFET CHARACTERISTICS Abstract: .. Forward Transconductancea g fs VDS = − 10V, ID = − 7.2A 15 18 S. Diode Forward Voltagea V SD IS = − 1.7A, VGS = 0V - 0.80 - 0.80 V. Dynamic b. Total Gate Charge Qg 28 30. Gate-Source Charge Qgs 5.1 5.1. Gate-Drain .. datasheet abstract.. |
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First line: SPICE Device Model Si3483DV Vishay Siliconix P-Channel 30-V D-S MOSFET CHARACTERISTICS P-Channel Abstract: .. Forward Transconductancea g fs VDS = − 15V, ID = − 6.2A 15 14 S. Diode Forward Voltagea V SD IS = − 1.7A, VGS = 0V - 0.80 - 0.80 V. Dynamic b. Total Gate Charge Qg 20 23. Gate-Source Charge Qgs 3.6 3.6. Gate-Drain .. datasheet abstract.. |
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First line: 2N1616 MECHANICAL DATA Dimensions inches SILICON TRANSISTOR Bipolar Power Transistor TO61 Hermetic Abstract: .. h21E Static Forward Current Transfer Ratio VCE = 12V IC = 2A 15 75 -. VCEsat Collector-Emitter Saturation Voltage IC = 2A IB = 250mA 2. V. VBE Base-Emitter Voltage VCE = 12V IC = 2A 3. fT Transition Frequency .. datasheet abstract.. |
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First line: 2N1617 MECHANICAL DATA Dimensions inches SILICON TRANSISTOR Bipolar Power Transistor TO61 Hermetic Abstract: .. h21E Static Forward Current Transfer Ratio VCE = 12V IC = 2A 15 75 -. VCEsat Collector-Emitter Saturation Voltage IC = 2A IB = 250mA 2. V. VBE Base-Emitter Voltage VCE = 12V IC = 2A 3. fT Transition Frequency .. datasheet abstract.. |
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First line: TOTAL POWER INTL UNIVERSAL INPUT HARMONIC CORRECTION AC-DC OPEN FRAME SINGLE MULTIPLE Abstract: .. TPVP93-T050KK 4.0A +5.0V 10.0A 1.2A +15.0V 2.4A 0.8A -15.0V 1.2A. TPVP93-T033II 5.0A +3.3V 12.0A 1.5A +12.0V 3.0A 1.0A -12.0V 1.5A. TPVP93-T033KK 5.0A +3.3V 12.0A 1.2A +15.0V 2.0A 0.8A -15.0V .. datasheet abstract.. |
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First line: AC / DC EXTERNAL DESKTOP ADAPTER UNIVERSAL INPUT MULTIPLE OUTPUT 14-16 WATTS SWITCHING POWER Abstract: .. TPES14-33 1.50A +5.0V 2.0A 0.2A +15.0V 0.4A 0.50A -5.0V 0.8A. TPES14-34 1.50A +5.0V 2.0A 0.2A +15.0V 0.4A 0.15A -15.0V 0.3A. Symbol: " " OVP Built-in. "●" Installed with Post Regulator P.R. . " †" Stacked .. datasheet abstract.. |
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First line: SEMICONDUCTOR TECHNICAL DATA HIGH VOLTAGE HIGH RELIABILITY HIGH SPEED SWITCHING WIDE KTC4527F Abstract: .. hFE 1 Note VCE=5V, IC=0.2A 15 - 40. hFE 2 VCE=5V, IC=1A 8 - - Collector-Base Breakdown Voltage BVCBO IC=1mA, IE=0 1100 - - V. Collector-Emitter Breakdown Voltage BVCEO IC=5mA, RBE= , 800 - - V .. datasheet abstract.. |
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First line: L6932 HIGH PERFORMANCE ULDO LINEAR REGULATOR PRELIMINARY DATA INPUT VOLTAGE RANGE Rdson Abstract: .. L6932D1.2 Load Regulation Vin = 3.3V; 0.1A < Io < 2A 15 mV. L6932D1.8 Load Regulation Vin = 3.3V; 0.1A < Io < 2A 15 mV. * Guaranteed by design due to measurement problems. REFERENCE VREF=1.25V. CURRENT .. datasheet abstract.. |
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First line: AM81214-060 MICROWAVE TRANSISTORS L-BAND RADAR APPLICATIONS REFRACTORY / GOLD METALLIZATION EMITTER SITE BALLASTED RUGGEDIZED Abstract: .. hFE VCE = 5V IC = 2A 15 — 150 — DYNAMIC. AM81214-060. 2/6. TYPICAL PERFORMANCE. RELATIVE POWER OUTPUT .. datasheet abstract.. |
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First line: SD1898 MICROWAVE TRANSISTORS SATCOM APPLICATIONS VOLTS EFFICIENCY MIN. CLASS OPERATION COMMON BASE Abstract: .. hFE VCE = 5V IC = 2A 15 — 150 — DYNAMIC. TYPICAL PERFORMANCE. POWER OUTPUT vs POWER INPUT EFFICIENCY vs POWER INPUT. SD1898. 2/4. TEST CIRCUIT. C1, C2 : .4 - 2.5pF Johanson Capacitor C3 : 15,000pF EMI Filter .. datasheet abstract.. |
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First line: CONNECTOR Connectors tabs Features locking easy insertion combination terminal housing provides easy Abstract: .. PS-187-2A-15. 22.4 .882 24.5 .965 2.0 .079 5.0 .197 15.0 .591 7.1 .280 6.1 .240 5 .. PS-250-2A-15. 27.8 1.094 2.4 .094 8.5 .335 7.5 .295 9.55 .376 5.0 .197 24.0 .945 .. datasheet abstract.. |
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First line: L6932 HIGH PERFORMANCE ULDO LINEAR REGULATOR INPUT VOLTAGE RANGE 200m Rdson MAX. Abstract: .. L6932D1.2 Load Regulation Vin = 3.3V; 0.1A < Io < 2A 15 mV. L6932D1.5 Load Regulation Vin = 3.3V; 0.1A < Io < 2A 15 mV. L6932D1.8 Load Regulation Vin = 3.3V; 0.1A < Io < 2A 15 mV. L6932D2.5 Load Regulation .. datasheet abstract.. |
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First line: SD1898 MICROWAVE TRANSISTORS SATCOM APPLICATIONS VOLTS EFFICIENCY MIN. CLASS OPERATION COMMON BASE Abstract: .. hFE VCE = 5V IC = 2A 15 — 150 — DYNAMIC. TYPICAL PERFORMANCE. POWER OUTPUT vs POWER INPUT EFFICIENCY vs POWER INPUT. SD1898. 2/4. TEST CIRCUIT. C1, C2 : .4 - 2.5pF Johanson Capacitor C3 : 15,000pF EMI Filter .. datasheet abstract.. |
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First line: AM81214-060 MICROWAVE TRANSISTORS L-BAND RADAR APPLICATIONS REFRACTORY / GOLD METALLIZATION EMITTER SITE BALLASTED RUGGEDIZED Abstract: .. hFE VCE = 5V IC = 2A 15 — 150 — DYNAMIC. AM81214-060. 2/6. TYPICAL PERFORMANCE. RELATIVE POWER OUTPUT .. datasheet abstract.. |
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First line: WATT DC-DC CONVERTERS INPUT VOLTAGE Feature 24-Pin Package Regulated Outputs Efficiency Input Abstract: .. 2A-15. 2A-21. 2A-22. 2A-23. 2A-24. 2A-25. 2A-31. 2A-32. 2A-33. 2A-34. 2A-35. 2A-41. 2A-42. 2A-43. 2A-44. 2A-45 .. datasheet abstract.. |
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First line: BEHLMAN WATT DC-DC CONVERTERS Feature 24-Pin Package Regulated Outputs Efficiency Input Filter Abstract: .. 2A-15. 2A-21. 2A-22. 2A-23. 2A-24. 2A-25. 2A-31. 2A-32. 2A-33. 2A-34. 2A-35. 2A-41. 2A-42. 2A-43. 2A-44. 2A-45 .. datasheet abstract.. |
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First line: CONNECTOR Connectors tabs Features locking easy insertion combination terminal housing provides easy Abstract: .. PS-187-2A-15. 22.4 .882 24.5 .965 2.0 .079 5.0 .197 15.0 .591 7.1 .280 6.1 .240 5 .. PS-250-2A-15. 27.8 1.094 2.4 .094 8.5 .335 7.5 .295 9.55 .376 5.0 .197 24.0 .945 .. datasheet abstract.. |
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First line: L6932 HIGH PERFORMANCE ULDO LINEAR REGULATOR INPUT VOLTAGE RANGE 200m Rdson MAX. Abstract: .. L6932D1.2 Load Regulation Vin = 3.3V; 0.1A < Io < 2A 15 mV. L6932D1.8 Load Regulation Vin = 3.3V; 0.1A < Io < 2A 15 mV. L6932D2.5 Load Regulation Vin = 3.3V; 0.1A < Io < 2A 15 mV. Rdson Drain Source ON resistance .. datasheet abstract.. |
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First line: TH97 / 10561QM TW00 / 17276EM IATF TH07 / 1033 SMZ15 Series Volts Watt FEATURES Complete voltage range Abstract: .. SMZ1515 2A 15 17.0 14 700 0.25 5.0 11.4 61 305. SMZ1516 2B 16 15.5 16 700 0.25 5.0 12.2 57 285. SMZ1518 2C 18 14.0 20 750 0.25 5.0 13.7 50 250. SMZ1520 2D 20 12.5 22 750 0.25 5.0 15.2 45 225. SMZ1522 2E 22 11.5 23 .. datasheet abstract.. |
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First line: TH97 / 10561QM TW00 / 17276EM IATF TH07 / 1033 SMZ15 Series Volts Watt Complete voltage range Volts Abstract: .. SMZ1515 2A 15 17.0 14 700 0.25 5.0 11.4 61 305. SMZ1516 2B 16 15.5 16 700 0.25 5.0 12.2 57 285. SMZ1518 2C 18 14.0 20 750 0.25 5.0 13.7 50 250. SMZ1520 2D 20 12.5 22 750 0.25 5.0 15.2 45 225. SMZ1522 2E 22 11.5 23 .. datasheet abstract.. |
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First line: UNISONIC TECHNOLOGIES N5027 HIGH VOLTAGE HIGH RELIABILITY TRANSISTOR FEATURES High Voltage VCEO Abstract: .. Current Gain Bandwidth Product fT V CE=10V, IC=0.2A 15 MHz. Turn ON Time tON 0.5 ƒ s. Storage Time tSTG 3 ƒ s. Fall Time tF. VCC=400V IC=5IB1= -2.5IB2=2A RL=200 ∏ 0.3 ƒ s. CLASSIFICATION of hFE1. RANK .. datasheet abstract.. |
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First line: Power NN-Channel Power NDMOS Structure NLow On-State Resistance max NUltra High-Speed Switching Abstract: .. Rise Time tr Vgs = 5V , Id = 2A 15 ns. Turn-off Delay Time td off Vdd = 10V 85 ns. Fall Time tf 45 ns. Thermal Characteristics. PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS. Thermal Resistance. Implement .. datasheet abstract.. |
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First line: KSC1983 KSC1983 High Gain Power Transistor TO-220 2.Collector 3.Emitter 1.Base Epitaxial Silicon Abstract: .. fT Current Gain Bandwidth Product VCE = 12V, IC = 0.2A 15 MHz. KSC1983. High Gain Power Transistor. 1.Base 2.Collector 3.Emitter. 1 TO-220. ©2000 Fairchild Semiconductor International. KSC1983. Rev. .. datasheet abstract.. |
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First line: Continental Device India Limited ISO / TS Certified Company SILICON PLANAR POWER TRANSISTOR CFC3852 Abstract: .. Transition Frequency fT VCE=12V, IC=0.2A 15 MHz. Collector Output Capacitance Cob VCB=10V, f=1MHz 50 pF. Switching Time. DESCRIPTION SYMBOL TEST CONDITION MIN TYP MAX UNIT. Turn On Time ton 0.8 μs .. datasheet abstract.. |
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First line: UNISONIC TECHNOLOGIES N5027 HIGH VOLTAGE HIGH RELIABILITY TRANSISTOR FEATURES High Voltage VCEO Abstract: .. Current Gain Bandwidth Product fT V CE=10V, IC=0.2A 15 MHz. Turn ON Time tON 0.5 ƒ s. Storage Time tSTG 3 ƒ s. Fall Time tF. VCC=400V IC=5IB1= -2.5IB2=2A RL=200 ∏ 0.3 ƒ s. CLASSIFICATION of hFE1. RANK .. datasheet abstract.. |
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First line: UNISONIC TECHNOLOGIES 2SC5027 HIGH VOLTAGE HIGH RELIABILITY SILICON TRANSISTOR FEATURES High Voltage Abstract: .. Current Gain Bandwidth Product fT V CE=10V, IC=0.2A 15 MHz. Turn ON Time tON 0.5 μs. Storage Time tS 3 μs. Fall Time tF. VCC=400V IC=5IB1= -2.5IB2=2A RL=200 ∏ 0.3 μs. CLASSIFICATION of hFE1 RANK N R O. RANGE .. datasheet abstract.. |
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First line: UNISONIC TECHNOLOGIES 2SC5027E HIGH VOLTAGE HIGH RELIABILITY TRANSISTOR SILICON TRANSISTOR FEATURES High Abstract: .. Current Gain Bandwidth Product fT V CE=10V, IC=0.2A 15 MHz. Turn ON Time tON 0.5 ƒ s. Storage Time tS 3 ƒ s. Fall Time tF. VCC=400V IC=5IB1= -2.5IB2=2A RL=200 ∏ 0.3 ƒ s. CLASSIFICATION of hFE1 CLASSIFICATION .. datasheet abstract.. |
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First line: SEMICONDUCTOR TECHNICAL DATA HIGH VOLTAGE HIGH RELIABILITY HIGH SPEED SWITCHING WIDE KTC4527 Abstract: .. hFE 1 Note VCE=5V, IC=0.2A 15 - 40. hFE 2 VCE=5V, IC=1A 8 - -. Collector-Base Breakdown Voltage BVCBO IC=1mA, IE=0 1100 - - V. Collector-Emitter Breakdown Voltage BVCEO IC=5mA, RBE= , 800 - - .. datasheet abstract.. |
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