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1 - 35 of about 35 for 2A-05 |
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First line: WATT DC-DC CONVERTERS INPUT VOLTAGE Feature 24-Pin Package Regulated Outputs Efficiency Input Abstract: .. 2A-05. 2A-11. 2A-12. 2A-13. 2A-14. 2A-15. 2A-21. 2A-22. 2A-23. 2A-24. 2A-25. 2A-31. 2A-32. 2A-33. 2A-34. 2A-35 .. datasheet abstract.. |
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First line: BEHLMAN WATT DC-DC CONVERTERS Feature 24-Pin Package Regulated Outputs Efficiency Input Filter Abstract: .. 2A-05. 2A-11. 2A-12. 2A-13. 2A-14. 2A-15. 2A-21. 2A-22. 2A-23. 2A-24. 2A-25. 2A-31. 2A-32. 2A-33. 2A-34. 2A-35 .. datasheet abstract.. |
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First line: ADVANCED INFORMATION MX26F640J3 / 128J3 64M / 128M x8 / x16 SINGLE PAGE MODE MEMORY FEATURES 3.0V 3.6V Abstract: .. :02,29:00 29: --00 2Ah 2 "n" such that maximum number of bytes in write buffer = 2n 2A: --05 32. 2B: --00. Number of erase block regions within device: 1. x = 0 means no erase blocking; the device erases .. datasheet abstract.. |
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First line: ADVANCED INFORMATION MX26F640J3 Macronix NBit Memory Family x8 / x16 SINGLE PAGE MODE eLiteFlash Abstract: .. 28:02,29:00 29: --00 2Ah 2 "n" such that maximum number of bytes in write buffer = 2n 2A: --05 32. 2B: --00. Number of erase block regions within device: 1. x = 0 means no erase blocking; the device erases .. datasheet abstract.. |
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First line: MX26F128J3 Macronix NBit Memory Family 128M x8 / x16 SINGLE PAGE MODE eLiteFlash MEMORY Abstract: .. 28:02,29:00 29: --00 2Ah 2 "n" such that maximum number of bytes in write buffer = 2n 2A: --05 32. 2B: --00. Number of erase block regions within device: 1. x = 0 means no erase blocking; the device erases .. datasheet abstract.. |
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First line: ADVANCED INFORMATION MX28F320J3 / 640J3 / 128J3 32M / 64M / 128M x8 / x16 SINGLE PAGE MODE FLASH MEMORY FEATURES 2.7V Abstract: .. :02,29:00 29: --00 2Ah 2 "n" such that maximum number of bytes in write buffer = 2n 2A: --05 32. 2B: --00. Number of erase block regions within device: 1. x = 0 means no erase blocking; the device erases .. datasheet abstract.. |
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First line: ADVANCED INFORMATION MX67L12816J3 / MX67L9632J3 32M-BIT 4Mb Flash Plus 96M-BIT 12Mb CMOS 16M-BIT 2Mb Abstract: .. :02,29:00 29: --00 2Ah 2 "n" such that maximum number of bytes in write buffer = 2n 2A: --05 32. 2B: --00. Number of erase block regions within device: 1. x = 0 means no erase blocking; the device erases .. datasheet abstract.. |
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First line: ADVANCED INFORMATION MX26F128J3 128M x8 / x16 SINGLE PAGE MODE MEMORY FEATURES 2.7V 3.6V Abstract: .. :02,29:00 29: --00 2Ah 2 "n" such that maximum number of bytes in write buffer = 2n 2A: --05 32. 2B: --00. Number of erase block regions within device: 1. x = 0 means no erase blocking; the device erases .. datasheet abstract.. |
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First line: ADVANCED INFORMATION MX26F640J3 / 128J3 64M / 128M x8 / x16 SINGLE PAGE MODE MEMORY FEATURES 3.0V 3.6V Abstract: .. :02,29:00 29: --00 2Ah 2 "n" such that maximum number of bytes in write buffer = 2n 2A: --05 32. 2B: --00. Number of erase block regions within device: 1. x = 0 means no erase blocking; the device erases .. datasheet abstract.. |
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First line: ADVANCED INFORMATION MX26L6419 x16 SINGLE PAGE MODE MEMORY FEATURES 3.0V 3.6V operation Abstract: .. :02,29:00 29: --00 2Ah 2 "n" such that maximum number of bytes in write buffer = 2n 2A: --05 32. 2B: --00. Number of erase block regions within device: 1. x = 0 means no erase blocking; the device erases .. datasheet abstract.. |
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First line: Volt Intel StrataFlash Memory 28F128J3A 28F640J3A 28F320J3A x8 / x16 Preliminary Datasheet Product Features Abstract: .. 2Ah 2 “n” such that maximum number of bytes in write buffer = 2n 2A: --05 32. 2B: --00. 2Ch 1. Number of erase block regions within device: 1. x = 0 means no erase blocking; the device erases in “bulk” 2. x .. datasheet abstract.. |
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First line: Intel Embedded Flash Memory Mbit Datasheet Product Features Architecture High-density symmetrical 128-Kbyte Abstract: .. 2Ah 2 “n” such that maximum number of bytes in write buffer = 2n 2A: --05 32. 2B: --00. 2Ch 1. Number of erase block regions within device: 1. x = 0 means no erase blocking; the device erases in “bulk” 2. x .. datasheet abstract.. |
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First line: Volt Intel StrataFlash Memory 28F128J3A 28F640J3A 28F320J3A x8 / x16 Datasheet Product Features Performance Abstract: .. 2Ah 2 “n” such that maximum number of bytes in write buffer = 2n 2A: --05 32. 2B: --00. 28F128J3A, 28F640J3A, 28F320J3A. Datasheet 49. Device Geometry Definition. B.7 Primary-Vendor Specific Extended .. datasheet abstract.. |
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First line: Volt Intel StrataFlash Memory 28F320J5 28F640J5 x8 / x16 Datasheet Product Features High-Density Symmetrically-Blocked Abstract: .. 2Ah 2 “n” such that maximum number of bytes in write buffer = 2n 2A: --05 32. 2B: --00. 2Ch 1. Number of erase block regions within device: 1. x = 0 means no erase blocking; the device erases in “bulk” 2. x .. datasheet abstract.. |
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First line: Intel Embedded Flash Memory Mbit Datasheet Product Features Architecture High-density symmetrical 128-Kbyte Abstract: .. 2Ah 2 “n” such that maximum number of bytes in write buffer = 2n 2A: --05 32. 2B: --00. 2Ch 1. Number of erase block regions within device: 1. x = 0 means no erase blocking; the device erases in “bulk” 2. x .. datasheet abstract.. |
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First line: Volt Intel StrataFlash Memory 28F128J3 28F640J3 28F320J3 x8 / x16 Datasheet Product Features Performance Abstract: .. 2Ah 2 “n” such that maximum number of bytes in write buffer = 2n 2A: --05 32. 2B: --00. 28F128J3, 28F640J3, 28F320J3. Datasheet 49. Device Geometry Definition. B.7 Primary-Vendor Specific Extended .. datasheet abstract.. |
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First line: Volt Intel StrataFlash Memory 28F128J3A 28F640J3A 28F320J3A x8 / x16 Preliminary Datasheet Product Features Abstract: .. 2Ah 2 “n” such that maximum number of bytes in write buffer = 2n 2A: --05 32. 2B: --00. 2Ch 1. Number of erase block regions within device: 1. x = 0 means no erase blocking; the device erases in “bulk” 2. x .. datasheet abstract.. |
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First line: Volt Intel StrataFlash Memory 28F128J3A 28F640J3A 28F320J3A x8 / x16 Preliminary Datasheet Product Features Abstract: .. 2Ah 2 “n” such that maximum number of bytes in write buffer = 2n 2A: --05 32. 2B: --00. 2Ch 1. Number of erase block regions within device: 1. x = 0 means no erase blocking; the device erases in “bulk” 2. x .. datasheet abstract.. |
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First line: Volt Intel StrataFlash Memory 28F320J5 28F640J5 x8 / x16 Preliminary Datasheet Product Features High-Density Abstract: .. 2Ah 2 “n” such that maximum number of bytes in write buffer = 2n 2A: --05 32. 2B: --00. 2Ch 1. Number of erase block regions within device: 1. x = 0 means no erase blocking; the device erases in “bulk” 2. x .. datasheet abstract.. |
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First line: Intel StrataFlash Memory J3 28F256J3 28F128J3 28F640J3 28F320J3 x8 / x16 Datasheet Product Features Abstract: .. 2Ah 2 “n” such that maximum number of bytes in write buffer = 2n 2A: --05 32. 2B: --00. 28F256J3, 28F128J3, 28F640J3, 28F320J3. 50 Datasheet. Device Geometry Definition. A.7 Primary-Vendor Specific .. datasheet abstract.. |
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First line: Volt Intel StrataFlash Memory Stacked-CSP 28F6408J3 Preliminary Datasheet Product Features Flash Memory Abstract: .. 2Ah 2 “n” such that maximum number of bytes in write buffer = 2n 2A: --05 32. 2B: --00. 2Ch 1. Number of erase block regions within device: 1. x = 0 means no erase blocking; the device erases in “bulk” 2. x .. datasheet abstract.. |
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First line: Numonyx Embedded Flash Memory Mbit Datasheet Product Features Architecture High-density symmetrical 128-Kbyte Abstract: .. 2Ah 2 “n” such that maximum number of bytes in write buffer = 2n 2A: --05 32. 2B: --00. 2Ch 1. Number of erase block regions within device: 1. x = 0 means no erase blocking; the device erases in “bulk” 2. x .. datasheet abstract.. |
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First line: Intel StrataFlash Memory J3 28F256J3 28F128J3 28F640J3 28F320J3 x8 / x16 Datasheet Product Features Abstract: .. 2Ah 2 “n” such that maximum number of bytes in write buffer = 2n 2A: --05 32. 2B: --00. 28F256J3, 28F128J3, 28F640J3, 28F320J3. Datasheet 53. Device Geometry Definition. A.7 Primary-Vendor Specific .. datasheet abstract.. |
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First line: Intel StrataFlash Memory J3 28F256J3 28F128J3 28F640J3 28F320J3 x8 / x16 Datasheet Product Features Abstract: .. 2Ah 2 “n” such that maximum number of bytes in write buffer = 2n 2A: --05 32. 2B: --00. 28F256J3, 28F128J3, 28F640J3, 28F320J3. Datasheet 49. Device Geometry Definition. A.7 Primary-Vendor Specific .. datasheet abstract.. |
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First line: Intel StrataFlash Memory J3 28F256J3 28F128J3 28F640J3 28F320J3 x8 / x16 Datasheet Product Features Abstract: .. 2Ah 2 “n” such that maximum number of bytes in write buffer = 2n 2A: --05 32. 2B: --00. 28F256J3, 28F128J3, 28F640J3, 28F320J3. 50 Datasheet. Device Geometry Definition. A.7 Primary-Vendor Specific .. datasheet abstract.. |
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First line: Intel StrataFlash Memory J3 256-Mbit x8 / x16 Datasheet Product Features Performance Initial Access Abstract: .. 2Ah 2 “n” such that maximum number of bytes in write buffer = 2n 2A: --05 32. 2B: --00. 256-Mbit J3 x8/x16 56 Datasheet. Device Geometry Definition. A.7 Primary-Vendor Specific Extended Query Table .. datasheet abstract.. |
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First line: Intel StrataFlash Memory J3 28F256J3 28F128J3 28F640J3 28F320J3 x8 / x16 Datasheet Product Features Abstract: .. 2Ah 2 “n” such that maximum number of bytes in write buffer = 2n 2A: --05 32. 2B: --00. 28F256J3, 28F128J3, 28F640J3, 28F320J3. 56 Datasheet. Device Geometry Definition. A.7 Primary-Vendor Specific .. datasheet abstract.. |
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First line: Intel StrataFlash Memory J3 28F256J3 28F128J3 28F640J3 28F320J3 x8 / x16 Datasheet Product Features Abstract: .. 2Ah 2 “n” such that maximum number of bytes in write buffer = 2n 2A: --05 32. 2B: --00. 28F256J3, 28F128J3, 28F640J3, 28F320J3. Datasheet 49. Device Geometry Definition. A.7 Primary-Vendor Specific .. datasheet abstract.. |
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First line: ADVANCED INFORMATION MX26L6419 x16 SINGLE PAGE MODE MEMORY FEATURES 3.0V 3.6V operation Abstract: .. :02,29:00 29: --00 2Ah 2 "n" such that maximum number of bytes in write buffer = 2n 2A: --05 32. 2B: --00. Number of erase block regions within device: 1. x = 0 means no erase blocking; the device erases .. datasheet abstract.. |
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First line: Volt Intel StrataFlash Memory 28F128J3 28F640J3 28F320J3 x8 / x16 Datasheet Product Features Performance Abstract: .. 2 “n” such that maximum number of bytes in write buffer = 2n 2A: --05 32 2B: --00. 28F128J3, 28F640J3, 28F320J3. Datasheet 49. Device Geometry Definition. B.7 Primary-Vendor Specific .. datasheet abstract.. |
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First line: Datasheet August TECO3264 32-Channel Echo Canceller Features Overall Device Applications Dual-convergence Abstract: .. 06 00 2A 05 4E 1F 72 05. 07 00 2B 00 4F 00 73 40. 08 00 2C 00 50 02 74 FF. 09 00 2D 00 51 FF 75 10. 0A 00 2E 1B 52 3F 76 00. 0B 00 2F F8 53 00 77 AA. 0C 00 30 19 54 00 78 00. 0D 00 31 15 55 08 79 00. 0E 00 32 02 56 80 7A 00. 0F 00 33 02 57 21 7B 03. 10 .. datasheet abstract.. |
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First line: AN974 / D Motorola Semiconductor Application Note AN974 MC68HC11 Floating-Point Package Abstract: .. 0869 C4F9 2A 05 BPL FLTASC14 NO. IT’S OK AS IS.. 0870 C4FB 50 NEGB YES. MAKE IT POSITIVE. 0871 C4FC 86 2D LDAA #’- PUT THE MINUS SIGN IN THE BUFFER. 0872 C4FE A7 00 STAA 0,X. Application Note. Floating-Point .. datasheet abstract.. |
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First line: Freescale Semiconductor Inc. Order this document AN974 / D Motorola Semiconductor Application Note AN974 Abstract: .. 0869 C4F9 2A 05 BPL FLTASC14 NO. IT’S OK AS IS.. 0870 C4FB 50 NEGB YES. MAKE IT POSITIVE. 0871 C4FC 86 2D LDAA #’- PUT THE MINUS SIGN IN THE BUFFER. 0872 C4FE A7 00 STAA 0,X. F r e. e s c. a le. S e. m ic. o n d. u c t o. r , I. Freescale .. datasheet abstract.. |
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First line: PMC-Sierra Inc. REFERENCE DESIGN ISSUE PM4344 TQUAD Quadruple Framer PM4344 TQUAD TQUAD Abstract: .. RBOC Enable 2A 05. ALMI Configuration 2C 10. ALMI Interrupt Enable 2D 07. TPSC Configuration 30 03. XFDL Configuration 34 03. RFDL Configuration 38 01. RFDL Interrupt Enable/Status 39 02. IBCD Configuration .. datasheet abstract.. |
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First line: 80C32T2 Appendices PhoX Controller Digital Cordless Telephones Advanced Micro Devices Inc. Advanced Abstract: .. 1945.0000 80 44 05 1944.9463 0.00 0.02 1946.0000 80 37 05 1945.9229 0.00 0.02 1947.0000 80 2a 05 1946.8994 ‐0.01 0.02 1948.0000 80 1d 05 1947.8760 ‐0.01 0.01 1949.0000 80 10 05 1948.9746 0.00 0.01 .. datasheet abstract.. |
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