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Part Manufacturer Description Datasheet BUY
CAR1812FPB-Z01A GE Critical Power AC/DC CONVERTER 12V 850W visit GE Critical Power
150039432 GE Critical Power AC/DC CONVERTER 12V 150W visit GE Critical Power
150038520 GE Critical Power AC/DC CONVERTER 12V 200W visit GE Critical Power
CAR0812FPB-Z01A GE Critical Power AC/DC CONVERTER 12V 850W visit GE Critical Power
ESTW010A0B41-HZ GE Critical Power DC/DC CONVERTER 12V 120W visit GE Critical Power
EHHD010A0B641Z GE Critical Power DC/DC CONVERTER 12V 120W visit GE Critical Power

2A 12v nChannel mosfet

Catalog Datasheet MFG & Type PDF Document Tags

POWER MOSFET Rise Time 1 ns

Abstract: dual high side MOSFET driver with charge pump HIP2101 ISL6700 Device Description 100V/2A Peak, High-Frequency Half Bridge N-Channel MOSFET Driver 100V/2A Peak, High-Frequency Half Bridge N-Channel MOSFET Driver with TTL-Compatible Logic Inputs 80V , SOIC T+R 8 Ld EPSOIC, 8 Ld SOIC 16 Ld QFN HIP6601B MOSFET Driver, Dual N-Channel, 730mA, 12V Low , N-Channel, 12V Low Side, 5/12V High Side, use with Multiphase Controller, POR = 7.6V HIP6603B MOSFET Driver , HIP6604B MOSFET Driver, Dual N-Channel, 730mA, 12V Low Side and 5/12V High Side or 5/12V High and Low Side
Intersil
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POWER MOSFET Rise Time 1 ns dual high side MOSFET driver with charge pump full bridge high speed mosfet driver delay line 400ns 1-888-INTERSIL ISL6571 HIP6301 EL7104 EL7154 EL7155

l1206

Abstract: Si9410DY 5mA < ILOAD < 2A 5mA < ILOAD < 2A Output Ripple (Burst Mode) 2 V10, V24 = 7V to 12V, ILOAD = , N-channel MOSFET and the (­) terminal of the 3.3V section input capacitor. NC (Pin 5): No Connection. NDRIVE 3 (Pin 6): High Current Drive for Bottom N-Channel MOSFET, 3.3V Section. Voltage swing at Pin 6 , capacitor. PGND5 (Pin 18): The 5V section driver power ground connects to source of N-channel MOSFET and , ): High Current Drive for Bottom N-Channel MOSFET, 5V Section. Voltage swing at Pin 20 is from ground to
Linear Technology
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l1206 Si9410DY Si9430DY LTC1142 LTC1142HV LTC1142L-ADJ LTC1142/LTC1142L/LTC1142HV 1142/LTC1142L/LTC1142HV LTC1625 LTC1628 LTC1703 LTC1702

circuit diagram for 48v automatic battery charger

Abstract: LTC126 (Pin 4): The 3.3V section driver power ground connects to source of N-channel MOSFET and the (­ , Drive for Bottom N-Channel MOSFET, 3.3V Section. Voltage swing at Pin 6 is from ground to VIN3. 5 , . PGND5 (Pin 18): The 5V section driver power ground connects to source of N-channel MOSFET and the (­ , Drive for Bottom N-Channel MOSFET, 5V Section. Voltage swing at Pin 20 is from ground to VIN5. NC , source of N-channel MOSFET and the (­) terminal of the section 1 input capacitor. LTC1142/LTC1142L
Linear Technology
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circuit diagram for 48v automatic battery charger LTC126 1N5818 5V 2A MOSFET N-channel ctx25-4 CTX33 28SSOP LTC1143 LTC1147 LTC1148 LTC1149 LTC1159

LTC1142L

Abstract: QP CORE (Pin 4): The 3.3V section driver power ground connects to source of N-channel MOSFET and the (­ , Drive for Bottom N-Channel MOSFET, 3.3V Section. Voltage swing at Pin 6 is from ground to VIN3. 5 , . PGND5 (Pin 18): The 5V section driver power ground connects to source of N-channel MOSFET and the (­ , Drive for Bottom N-Channel MOSFET, 5V Section. Voltage swing at Pin 20 is from ground to VIN5. NC , source of N-channel MOSFET and the (­) terminal of the section 1 input capacitor. LTC1142/LTC1142L
Linear Technology
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LTC1142L QP CORE LTC1174 LTC1265 LTC1266 LTC1267 LTC1574
Abstract: of N-channel MOSFET and the (â'") terminal of the 3.3V section input capacitor. NC (Pin 5): No Connection. NDRIVE 3 (Pin 6): High Current Drive for Bottom N-Channel MOSFET, 3.3V Section. Voltage swing , (Pin 20): High Current Drive for Bottom N-Channel MOSFET, 5V Section. Voltage swing at Pin 20 is from , source of N-channel MOSFET and the (â'") terminal of the section 1 input capacitor. LTC1142/LTC1142L/LTC1142HV U U U PI FU CTIO S NDRIVE 1 (Pin 6): High Current Drive for Bottom N-Channel MOSFET Linear Technology
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LTC1709 LTC1736 LTC1753 LTC1873 LTC1929

Power MOSFET p-Channel n-channel dual

Abstract: 2A 12v nChannel mosfet LittleFETTM Power MOSFET. 3.5A, 12V, 0.050 Ohm, Logic Level, Dual N-Channel LittleFETTM Power MOSFET. 2A, 60V, 0.130 Ohm, Dual N-Channel, LittleFETTM Power MOSFET , , 12V, 0.020 Ohm, Logic Level, Single N-Channel LittleFETTM Power MOSFET. 2.5A , N-Channel, Logic Level Power MOSFET. 2.6A, 55V, 0.090 Ohm, N-Channel UltraFET Power MOSFET. 3A, 55V, 0.070 Ohm, N-Channel
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OCR Scan
Power MOSFET p-Channel n-channel dual 2A 12v nChannel mosfet MOSFET 6A MOSFET ESD Rated 60V 2A MOSFET N-channel power mosfet HP4410DY HP4936DY HUF75307T3ST HUF75309T3ST HUF75631SK8 HUF76105DK8

LTC4223

Abstract: LTC4223-1 controls the main 12V supply with an external N-channel MOSFET and the 3.3V auxiliary supply with an , N-Channel MOSFET Adjustable Response Time for Overcurrent Protection Adjustable Supply Voltage Power-Up , N-Channel Gate Pull-Down Current Gate Drive Off V12VGATE = 17V, V12VOUT = 12V IGATE(FPD) External N-Channel Gate Fast Pull-Down Current Fast Turn Off V12VGATE = 17V, V12VOUT = 12V 90 , N-channel MOSFET if EN is pulled low and a falling edge turns it off. A high-to-low transition on this pin
Linear Technology
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LTC4223-1 LTC4223-2 LTC4223 Si7336ADP LTC4223-1/LTC4223-2 LTC1421 SSOP-24

ACL MARKING

Abstract: marking pG1 sot23-6 external N-channel MOSFET and the 3.3V auxiliary supply with an integrated switch. The 12V output ramp rate , Breaker Integrated 0.3 AUX Switch High Side Current Sense Gate Drive for External N-Channel MOSFET , On Control Digital Input. A rising edge turns on the external N-channel MOSFET if EN is pulled low , current limit during power-up and 6ms/F duration for 12V current limit before the external MOSFET is , external N-channel MOSFET and internal switch to turn on. If this pin is pulled high, the switches are not
Linear Technology
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ACL MARKING marking pG1 sot23-6 12IMON LTC1645 SSOP-16 MSOP-10 QFN-24 DFN-12
Abstract: , V 24 = 7V to 12V, I l o a d = 50mA Figure 1 Circuit 5mA < I l o a d < 2A 5mA < I l o a d ^ 2A Ilo ad , driver power ground connects to source of N-channel MOSFET and the (-) terminal of the 3.3V section input , section driver power ground connects to source of N-channel MOSFET and the (-) terminal of the 5V section , section 1 output capacitor. P G N D 1 (Pin 5): High Current Drive for Bottom N-Channel MOSFET, 5V , ): The section 1 driver power ground con nects to source of N-channel MOSFET and the (-) terminal of the -
OCR Scan
1142/LTC1142I7LTC1142HV

LTC1149

Abstract: LTC1149-5 ) terminal of COUT. PGND (Pin 12): Driver Power Ground. Connects to source of N-channel MOSFET and the (­) terminal of CIN. NGATE (Pin 13): High Current Drive for Bottom N-channel MOSFET. The voltage swing at Pin , outputs at Pins 4 and 13 are referenced to ground, which fulfills the N-channel MOSFET gate drive , timing capacitor is discharging, the NGATE output is high, turning on the N-channel MOSFET. When the , causes the NGATE output to go low (turning off the N-channel MOSFET) and the PGATE output to also go low
Linear Technology
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1N4148 LTC1149-5 1N5819 IRFR024 IRFR9024 SL-1-C1-0R050J LTC1149-3 3/LTC1149-5 MTP23P06 MTP36N06E MBR160
Abstract: 100µF 100V RSENSE* 0.05â"¦ VOUT 5V/2A SENSE + SENSE â'" NGATE 1000pF N-CHANNEL , VCC Internal Regulator Voltage (Sets MOSFET Gate Drive Levels) VIN = 12V to 48V I3 = 20mA , (â'") terminal of COUT. PGND (Pin 12): Driver Power Ground. Connects to source of N-channel MOSFET and the (â'") terminal of CIN. NGATE (Pin 13): High Current Drive for Bottom N-channel MOSFET. The , outputs at Pins 4 and 13 are referenced to ground, which fulfills the N-channel MOSFET gate drive Linear Technology
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HL-EK210M SL-1-C1-0R033J LTC1148HV LTC1435A LTC1438

2N2222 n CHANNEL

Abstract: KRL SL-1-C1-0R050J FIGURE 1 CIRCUIT VIN = 12V 90 RSENSE* 0.05 VOUT 5V/2A LTC1149-5 SHUTDOWN 1 SENSE 0V = , ): Driver power ground. Connects to source of N-channel MOSFET and the (­) terminal of CIN. Pin 13 (N-Gate): High current drive for bottom Nchannel MOSFET. The voltage swing at pin 13 is from ground to VCC. Pin , are referenced to ground, which fulfills the N-channel MOSFET gate drive requirement. The P-channel , discharging, the N-gate output is high, turning on the N-channel MOSFET. When the voltage on the timing
Linear Technology
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2N2222 n CHANNEL KRL SL-1-C1-0R050J LT1149 LVR30 508 sanyo v10 crowbar
Abstract: 3.3V section driver power ground connects to source of N-channel MOSFET and the (-) terminal of the , Bottom N-Channel MOSFET, 3.3V Section. Voltage swing at Pin 6 is from ground to V|N3. O O lb S ^ ? , (Pin 20): High Current Drive for Bottom N-Channel MOSFET, 5V Section. Voltage swing at Pin 20 is from , N-channel MOSFET and the (-) terminal of the section 1 input capacitor. NC (Pins 21,22): No Connection , 19): The section 2 driver power ground connects to source of the N-channel MOSFET and the (- -
OCR Scan
LTC1142/LTC 42L/LTC 142HV
Abstract: MOSFET source connection. 16, 17, 18 VCC12 12V Supply Input. Power-supply input and n-channel , .) PARAMETER SYMBOL 5V MOSFET Output Capacitance COUT (Note 4) 400 pF 12V MOSFET Output , AUTORETRY ENABLED VCC = 12V, "¦ RESISTIVE LOAD MAX34561 toc16 VCC12 LOAD12 VCC5 2V/div 5V , Supply Input. Power-supply input and n-channel power MOSFET drain connection. If the 5V side is not used , Connection 11 ILIM12 12â'"15 LOAD12 5V Load Output. n-channel power MOSFET source connection Maxim Integrated Products
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DS4560 T2444

LXC 32

Abstract: FBC 30 A N-Channel Drive Output. Drives the main output synchronous rectifier MOSFET. NDRV swings between CVL and , converter, the core regulator makes use of an N-channel MOSFET synchronous rectifier, improving efficiency , N-channel MOSFET. The core output voltage is measured at FBC through a resistive voltagedivider. This , a synchronous-rectifier Nchannel MOSFET. When selecting the MOSFETs, important parameters to , main (+3.3V at over 2A) and core (+1.8V at up to 1.5A) supplies for a complete power solution for
Maxim Integrated Products
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LXC 32 FBC 30 A CS15 TRANSISTOR MAX1775

p-channel pin mosfet 5102

Abstract: capacitor. PGND3 (Pin 4): The 3.3V section driver power ground connects to source of N-channel MOSFET and , CurrentDrive for Bottom N-Channel MOSFET, 3.3V Section. Voltage swing at Pin 6 is from ground to V !N3. , section driver power ground connects to source of N-channel MOSFET and the (-) terminal of the 5V section , . PGND1 (Pin 5): The section 1 driver power ground con nects to source of N-channel MOSFET and the (- , Funcnons NDRIVE1 (Pin 6): High CurrentDriveforBottom N-Channel MOSFET, Section 1. Voltage swing at Pin 6
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OCR Scan
p-channel pin mosfet 5102

circuit diagram for 24V mobility battery charger

Abstract: LTC1153 N-channel switches. The LTC1155, dual micropower MOSFET driver, generates 12V from a 5V rail to fully , by many volts! >9V DS1 STANDARD N-CHANNEL MOSFET VS G1 LTC1155 12V* STANDARD , 2.5 times, so that a P-channel MOSFET with the same RDS(ON) and voltage rating as its N-channel , mode (both inputs off). This combination of low-drop N-channel MOSFET switch and micropower 5V , . MOSFET SWITCH SELECTION N-channel MOSFET switches fall into two main categories: logic-level and
Linear Technology
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LTC1153 circuit diagram for 24V mobility battery charger LT1121 AN5314 1A30A AN53 MTD3055EL 1N5817 LT1117-2 AN53-16

CS11

Abstract: CS15 N-Channel Drive Output. Drives the main output synchronous rectifier MOSFET. NDRV swings between CVL and , makes use of an N-channel MOSFET synchronous rectifier, improving efficiency and eliminating the need , MOSFET, while the valley current and zero crossing current are sensed through the N-channel MOSFET. The , a synchronous-rectifier Nchannel MOSFET. When selecting the MOSFETs, important parameters to , (+3.3V at over 2A) and core (+1.8V at up to 1.5A) supplies for a complete power solution for PDAs
Maxim Integrated Products
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CS11 CS15 MAX1775EEE E16-5

MAX1775

Abstract: ILC 880 N-Channel Drive Output. Drives the main output synchronous rectifier MOSFET. NDRV swings between CVL and , makes use of an N-channel MOSFET synchronous rectifier, improving efficiency and eliminating the need , MOSFET, while the valley current and zero crossing current are sensed through the N-channel MOSFET. The , a synchronous-rectifier Nchannel MOSFET. When selecting the MOSFETs, important parameters to , (+3.3V at over 2A) and core (+1.8V at up to 1.5A) supplies for a complete power solution for PDAs
Maxim Integrated Products
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ILC 880

LTC1148HV

Abstract: CTX50-2MP N-channel MOSFET and the (­) terminal of CIN. NC (Pin 13): No Connection. Can connect to power ground. N-Channel Drive (Pin 14): High Current Drive for Bottom N-Channel MOSFET. Voltage swing at pin 14 is from , capacitor is discharging, the N-drive output goes to VIN, turning on the N-channel MOSFET. When the , causes the N-drive output to go low (turning off the Nchannel MOSFET) and the P-drive output to also go , the Nchannel MOSFET to turn off. The circuit now enters sleep mode with both power MOSFETs turned
Linear Technology
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CTX50-2MP LTC1148L NP-1A 35VX2 logic level n channel MOSFET si9405dy LTC1148-3 3/LTC1148-5
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