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Part Manufacturer Description Datasheet BUY
TMS28F020-10C4FME Texas Instruments 256KX8 FLASH 12V PROM, 100ns, PQCC32, 1.25 MM PITCH, PLASTIC, LCC-32 visit Texas Instruments
TMS28F020-10C5DDQ Texas Instruments 256KX8 FLASH 12V PROM, 100ns, PTSO32, TSOP-32 visit Texas Instruments
TMS28F020-12C4DDL4 Texas Instruments 256KX8 FLASH 12V PROM, 120ns, PDSO32 visit Texas Instruments
TMS28F020-12C5DDL Texas Instruments 256KX8 FLASH 12V PROM, 120ns, PTSO32, TSOP-32 visit Texas Instruments
TMS28F020-15C4DDE4 Texas Instruments 256KX8 FLASH 12V PROM, 150ns, PDSO32 visit Texas Instruments
TMS28F020-15C5DDE Texas Instruments 256KX8 FLASH 12V PROM, 150ns, PTSO32, TSOP-32 visit Texas Instruments

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28F020 Datasheet

Part Manufacturer Description PDF Type
28F020 Intel 2048K (256K x 8) CMOS FLASH MEMORY Original
28F020 Intel 2048K (256K x 8) CMOS FLASH MEMORY Original
28F020 Intel 2048K (256K x 8) FLASH MEMORY Original
28F020 Intel 2048K (256K x 8) CMOS Flash Memory Scan
28F020 Intel 2048K CMOS Flash Memory Scan
28F020 Intel 2048K (256K x 8) CMOS Flash Memory Scan
28F020 N/A Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Scan
28F020 N/A Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Scan
28F020 N/A Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Scan

28F020

Catalog Datasheet MFG & Type PDF Document Tags

B1560

Abstract: B1560 equivalent 28F020 2048K (256K x 8) FLASH MEMORY SmartDie Product Specification Y Flash Electrical Chip , November 1995 Order Number 271295-002 28F020 28F020 2048K (256K x 8) FLASH MEMORY 271295 ­ 1 28F020 2048K (256K x 8) Flash Memory Die Photo 2 28F020 28F020 2048K (256K x 8) FLASH MEMORY 10 , plot and the photo indicate the location of the GEL-PAK notch Figure 1 28F020 2048K (256K x 8) Flash Memory Die Bond Pad Layout 3 28F020 28F020 2048K (256K x 8) FLASH MEMORY 1 1 Pad Description
Intel
Original
X28F020-90 AP-316 AP-325 B1560 B1560 equivalent transistor B1560 294005 3817 29024 ER-20 ER-24 RR-60

28f020-150

Abstract: intel 28F020 production lots. TESTING CHARACTERISTICS FOR 28F020-90, 28F020-150, 28F020-200 AC TESTING INPUT/OUTPUT , >5) Min 80 80 80 35 0 55 0 35 0 6 Max 28F020-90 , 28F020-150W Min 150 0 60 50 10 6 0 20 0 60 20 10 28F020-200(4) Min 200 0 75 50 10 6 0 20 0 60 20 10 9.5 , 28F020-90«) Min 90 90 90 55 0 55 0 35 0 6 Max 28F020-150 Min 150 150 150 55 0 55 0 35 0 6 Max Unit ns , Notes 28F020-90«) Min 90 0 60 50 10 6 Max 28F020-150 Min 150
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intel 28F020 P28F020-150 P28F020-200 N28F020-200 E28F020-150 F28F020-150 F28F020-200

29F020

Abstract: 29020 CE# at a logic-high level, the standby operation disables most of the 28F010 and 28F020's circuitry , how commands and bus operations are combined to perform electrical erasure of the 28F010 and 28F020. , ^ t intel 5 VOLT BULK ERASE FLASH MEMORY 28F010 and 28F020 (x8) Flash Electrical Chip-Erase , cost-effective and reliable alternative for read/write random access nonvolatile memory. The 28F010 and 28F020 , final test; and in-system after sale. The 28F010 and 28F020 increase memory flexibility, while
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29F020 29020 80C186 E28F010 N28F010 P28F010 28F010/28F020 E28F010-90 N28F010-90 E28F010-120 E28F010-150 TE28F010-90

i80C186

Abstract: M28F020 | . 30 pF NOTES: 1. Testing characteristics for 28F020-70 in standard configuration, and 28F020-90 and 28F020-150. 2. Testing characteristics for 28F020-70 in high speed configuration. 5-19 , Change Write Recovery Time before Read 2 ,3 0 Vcc + 5% VCC + 1 0 % Notes 28F020-70W 28F020-70(5) Min 70 70 70 28 Max Min 80 80 80 30 Max 28F020-90(5) Min 90 90 90 35 Max 28F020-150(S) Min 150 120 , 40 Vcc +5% Vcc 28F020-70(2.4) 28F020-70 Min 70 0 40 Max Min 80 0 40 Max 28F020-90
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i80C186 M28F020 P28F020-70 N28F020-70 P28F020-90 N28F020-90 F28F020-70

SSC16E

Abstract: N28F020-200 Time to Chip Enable Low 1 Notes 28F020-150 Min 150 0 80 50 10 6 0 0 0 70 20 1.0 Max 28F020-200 Min 200 , stat ic RAM. Where periodic updates of code and datatables are required, the 28F020's reprogrammability , . Figure 3 de picts two 28F020s tied to the 80C186 system bus. The 28F020's architecture minimizes , , the standby operation disables most of the 28F020's circuitry and substantially reduces device power , configurations, TSOP reduces the number of board layers and overall volume nec essary to layout multiple 28F020S.
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SSC16E 32-PIN 32-LEAD

PPH 2222 36

Abstract: P28F010-150 # at a logic-high level, the standby operation disables m ost of the 28F010 and 28F020's circuitry and , lin g 14 28F010/28F020 PAGE 4.5 DC Characteristics- 28F020- TTLVNMOS C om patible- Com m , ro d u c ts .24 4.7 DC Characteristics- 28F020- CMOS Com patible- Com m ercial P ro d u , - 28F020- TTLVNMO Com patible- Extended Tem perature P ro d u c ts , .31 4.11 DC Characteristics- 28F020- CM OS Com patible- Extended Tem perature P ro d u c ts
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P28F010-150 PPH 2222 36 28F010-150N 28F010-90 28F010-120 28F010-150 P28F010-90 P28F010-120
Abstract: 28F020S tied to the 80C186 system bus. The 28F020â'™s architecture minimizes interface circuitry needed , RAM. Where periodic updates of code and data tables are required, the 28F020â'™s reprogrammability , Standby With CE# at a logic-high level, the standby operation disables most of the 28F020â'™s , erasure of the 28F020. Refer to AC Characteristicsâ'" Write/Erase/Program Only Oper­ ations and , off. Table 4 illustrates the power dissipated when updating the 28F020. intei 28F020 Table -
OCR Scan
Abstract: limited number of samples from production lots. TESTING CHARACTERISTICS FOR 28F020-90, 28F020-150, 28F020-200 TESTING CHARACTERISTICS FOR 28F020-80V05 AC TESTING INPUT/OUTPUT WAVEFORM AC TESTING , are required, the 28F020â'™s reprogrammability and nonvolatility make it the obvious and ideal re , . The 28F020â'™s architecture minimizes interface cir­ cuitry needed for complete in-circuit updates , the number of board layers and overall volume nec­ essary to layout multiple 28F020s. TSOP is -
OCR Scan
32-LE TN28F020-90 TN28F020-150 TE28F020-90 TF28F020-90 TE28F020-150
Abstract: à R lIà M M tf In te l 28F020 2048K (256K x 8) FLASH MEMORY SmartDie Product Specification , owners. October 1994 Order Number: 271295-002 HÛ2bl7S QlSSblD 431» 10-9 28F020 28F020 2048K (256K x 8) FLASH MEMORY intel 28F020 2048K (256K x 8) Flash Memory Die Photo 10-10 I 4 f l2 b l7 5 P fô iy iM O K là if D lS S bll 37Ã â  28F020 28F020 2048K (256K x 8 , the GEL-PAK notch. Figure 1. 28F020 2048K (256K x 8) Flash Memory Die/Bond Pad Layout 4fl2bl7S -
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28F020

Abstract: 80C186 1 Testing characteristics for 28F020-70 in standard configuration and 28F020-90 and 28F020-150 2 , 28F020-150(5) Commercial and Extended Temperature Products 28F020-70(4) NOTES 1 Whichever occurs , data-tables are required the 28F020's reprogrammability and nonvolatility make it the obvious and ideal , 80C186 system bus The 28F020's architecture minimizes interface circuitry needed for complete in-circuit , standby operation disables most of the 28F020's circuitry and substantially reduces device power
Intel
Original
80c186 specification update ER-28

intel eprom Intelligent algorithm

Abstract: 28F020 28F020-70 in standard configuration, and 28F020-90 and 28F020-150. 2. Testing characteristics for 28F020-70 , Temperature Products Versions Vcc+5% 28F020-70 Unit Vcc +10% 28F020-70 , periodic updates of code and data-tables are required, the 28F020's reprogrammability and non-volatility , bus. The 28F020's architecture minimizes interface circuitry needed for complete in-circuit updates of , logic-high level, the standby operation disables most of the 28F020's circuitry and substantially reduces
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intel eprom Intelligent algorithm E28F020 F28F020 N28F020 P28F020 N2BF020-70
Abstract: characteristics for 28F020-70 in standard configuration, and 28F020-90 and 28F020-150. 2. Testing characteristics , 28F020-70W 28F020-70 Vcc + 1 0 % Symbol Characteristics Notes Min Max 28F020-90 , from 28F020-150 production lots. 402bl75 OlbbQbl 2T3 â  28F020 ABSOLUTE MAXIMUM RATINGS , RAM. Where periodic updates of code and data-tables are required, the 28F020â'™s reprogrammability , to the 80C186 system bus. The 28F020â'™s architecture minimizes interface cir­ cuitry needed for -
OCR Scan

TN28F020-150

Abstract: 28F020 28F020's reprogrammability and nonvolatility make it the obvious and ideal replacement for EPROM , memory-to-processor interfacing. Figure 3 depicts two 28F020s tied to the 80C186 system bus. The 28F020's , , the standby operation disables most of the 28F020's circuitry and substantially reduces device , , illustrates how commands and bus operations are combined to perform electrical erasure of the 28F020. Refer , illustrates the power dissipated when updating the 28F020. E 28F020 Table 4. 28F020 Typical Update
Intel
Original
E28F020-120 TE28F020-120 P28F020-120 TN28F020-120

28F020

Abstract: intel DOC Nomenclature Errata are design defects or errors. These may cause the 28F020's behavior to deviate from , 5 VOLT BULK ERASE FLASH MEMORY 28F020(x8) SPECIFICATION UPDATE Release Date: February, 1999 Order Number: 297847-002 The 28F020 may contain design defects or errors known as errata which may , in this Specification Update. 28F020 SPECIFICATION UPDATE Information in this document is , any time, without notice. The 28F020 may contain design defects or errors known as errata which may
Intel
Original
intel DOC

28F020T

Abstract: intel 28F020 ircuit*2) NOTES: 1. Testing characteristics for 28F020-70 in standard configuration, and 28F020-90 and 28F020-150. 2. Testing characteristics for 28F020-70 in high speed configuration. 1998 Flash M em ory D , 0 0 28F020-120W Min 120 120 120 28F020-150W Min 150 150 150 50 0 Symbol tAVAV^RC tELQV , periodic updates of code and data tables are required, the 28F020's reprogrammability and nonvolatility , depicts two 28F020S tied to the 80C186 system bus. The 28F020's architecture minimizes interface circuitry
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28F020T 28F02Q E28FQ20-150 TE28F02Q-90 TNS8F020-90 P28FQ20-150

n28f020-150

Abstract: | .30 pF 1. Testing characteristics for 28F020-70 in standard configuration, and 28F020-90 and 28F020-150. 2. Testing characteristics for 28F020-70 in high speed configuration. 6-18 I AC , tELQV/tCE V cc + 5 % VCc + 10% 28F020-70H) 28F020-70 , 28F020-70
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28F020

Abstract: intel DOC 28F020's behavior to deviate from published specifications. Hardware and software designed to be used , tELQV/tCE Notes 28F020-1204 Min 120 2,3 0 ns ns 55 0 2 1,2 ns ns ns , Characteristics tAVAV/tWC Write Cycle tAVWL/tAS Notes 28F020-120(4) Min Max Units 120 , 28F020 SPECIFICATION UPDATE Release Date: June, 1997 Order Number: 297847-001 The 28F020 may , specifications. Current characterized errata are documented in this Specification Update. 28F020
Intel
Original

28F020

Abstract: TN28F010 28F010 and 28F020's circuitry and substantially reduces device power consumption. The outputs are , . Figure 3 depicts two 28F020s tied to the 80C186 system bus. The 228F010 and 28F020 architecture , 28F020. Refer to AC Characteristics-Write/Erase/Program Only Operations and waveforms for specific , E 5 VOLT BULK ERASE FLASH MEMORY 28F010 and 28F020 (x8) n n n n n n n Flash , cost-effective and reliable alternative for read/write random access nonvolatile memory. The 28F010 and 28F020
Intel
Original
N28F010-120 TN28F010 intel 28F010 TN28F010-90 TN28F010-120 TN28F010-150 TP28F010-90 TP28F010-120 TP28F010-150

intel 80c186

Abstract: 28F020 1 Testing characteristics for 28F020-70 in standard configuration and 28F020-90 and 28F020-150 2 , 28F020-150(5) Commercial and Extended Temperature Products 28F020-70(4) NOTES 1 Whichever occurs , data-tables are required the 28F020's reprogrammability and nonvolatility make it the obvious and ideal , 80C186 system bus The 28F020's architecture minimizes interface circuitry needed for complete in-circuit , a logic-high level the standby operation disables most of the 28F020's circuitry and substantially
Intel
Original
intel 80c186 A80C186

P28F020-150

Abstract: 28F020 . Testing characteristics for 28F020-70 in standard configuration, and 28F020-90 and 28F020-150. 2. Testing , 28F020-70 , 28F020-70 , periodic updates of code and data-tables are required, the 28F020's reprogrammability and non-volatility , bus. The 28F020's architecture minimizes interface circuitry needed for complete in-circuit updates of
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M28F020

Abstract: am28f020-95 Automatic program/erase pulse stop timer GENERAL DESCRIPTION The Am 28F020 is a 2 Megabit Flash memory , read/write non volatile random access memory. The Am 28F020 is packaged in 32-pin PDIP and PLCC , erased in-system or in standard EPRO M programmers. The standard A m 28F020 offers access times as fast , contention, the A m 28F020 has separate chip enable (CE) and out put enable (OE) controls. A M D 's Flash memories augment EPROM functionality with in-circuit electrical erasure and programming. The Am 28F020 uses
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am28f020-95 28F020-95 28F020-95C
Abstract: 28F020 2048K (256K X 8) CMOS FLASH MEMORY Flash Electrical Chip-Erase - 2 Second Typical , 's 28F020 CM OS flash m em ory offers the m ost cost-effective and reliable alternative for read/write random access nonvolatile memory. T he 28F020 adds electrical chip-erasure and reprogram ming to fam , 28F020 increases m em ory flexibility, w hile contributing to time and cost savings. The 28F020 is a 2048-kilobit nonvolatile m em ory organized as 262,144 bytes of eight bits. Intel's 28F020 is offered in 32-pin plastic DIP -
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