| Fulltext Datasheet Results |
1 - 50 of about 59 for 28C256 |
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First line: 28C256 EEPROM 28C256 28c255 Technology, Incorporated 28C256 Timer 256K Electrically Erasable PROM Military, Extended Commercial Temperature Range Operation (Military) Operation (Extended) Abstract: .. Technology, Incorporated 28C256 Timer E2 256K 256K Electrically Erasable PROM August 1992 Features ■ Military, Extended and Commercial Temperature Range • —S5"C to +125 C Operation Military .. Tags: 28c255 EEPROM 28C256 28C256 datasheet abstract.. |
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First line: 28C256 EEPROM 28C256 Microchip Military 28C256 256K (32K CMOS Electrically Erasable PROM Fast read access 120, maximum CMOS Technology power dissipation active standby Fast byte-write Abstract: .. Microchip Military 28C256 256K 256K 32K x 8 CMOS Electrically Erasable PROM FEATURES • Fast read access time—90, 120, 150 ns maximum • CMOS Technology for low power dissipation —80 mA active —350 .. Tags: EEPROM 28C256 28C256 datasheet abstract.. |
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First line: 28C256 26C256 DATI DfSCfttrrioN Abstract: .. supcrsedis MODULE TITUl r WUDKD V CPS for 3ZKx8 CMOS EEPROM 28C256 0*1 A AT ION I SMfKT 1 OP ..Ifl BV R. Hprhprj SPEC. NO. 10165 MV* A 2=2-,, OATf 7-2-85 f OflMiei04 OflMiei04 Vfl 8C256 8C256 256K 256K 52Kx8 52Kx8 .. Tags: 26C256 28C256 datasheet abstract.. |
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First line: 82307 EEPROM 28C256 ATMEL CORPORATION Tel:(408)441-0311 Fax:(408)436-4200 AT-28C256 CMOS EEPROM RELIABILITY DATA -150°C DYNAMIC OPERATING LIFE TEST -CYCLE TEST -200°C RETENTION BAKE -125°C DYNAMIC OPERATING LIFE TEST (PLASTIC) -150°C RETENTION BAKE (PLASTIC) PSIG PRESSURE -85°C/8 Abstract: .. PAGE 1 OF 10. ATMEL CORPORATION Tel: 408 441-0311 Fax: 408 436-4200. AT-28C256 CMOS EEPROM RELIABILITY DATA. -150 C DYNAMIC OPERATING LIFE TEST. -CYCLE TEST. -200 C RETENTION BAKE. -125 C DYNAMIC .. Tags: EEPROM 28C256 82307 *28C040* TSOP-5* 8836 28C256 atmel AT-28C256 AT-28C010 AT-28C040 |
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First line: Xicor 28256 eeprom dataman s4 24c04 Atmel atmel 24c02 27C32 Dataman Programmer Device Support List Library Version 2.84 2001 EPROMS, EEPROMS Flash ROMS 27010 2716B 2732B 27C010 27C100 27C512L 27HB010 28C256 28F256 29F002NBB 29F040 9716 9864-25 Alliance 29F002B Atmel 27256 27C020 27C256 27C513 27HC64 Abstract: .. 28C256 28F010 28F010 28F010A 28F010A 28F020 28F020 28F256 28F256 28F512 28F512 29F002BB 29F002BB 29F002BT 29F002BT 29F002NBB 29F002NBB 29F002NBT 29F002NBT 29F010 29F010 29F010A 29F010A /B 29F040 29F040 29F200 29F200 29F400 29F400 5517 9716 9864 9864-2 9864-20 9864-25 9864-3 9864-30 9864-35 .. Tags: atmel 24c02 24c04 Atmel dataman s4 Xicor 28C010 Xicor 28256 eeprom WMF512K8 toshiba 5517 ti 27c32 ti 27c256 SIGNETICS 87C256 siemens 2716b siemens 2716 SGS GAL20V8A SGS 2716 DS1225 |
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First line: intel 28F256 EEPROM 28C256 *28C040* 29f010 PLCC intel 28F256 plcc LEAPER-3C HANDY FLASH WRITER LEAPER-3C specially designed FLASH series, integrating powerful hardware software perform high quality best choice program FLASH series device. most attraction LEAPER-3C following products policy, i.e. Li Abstract: .. LEAP ELECTRONIC CO., LTD.. EPROM 27C64- 27C64- 27C080 27C080 EEPROM 28C256-28C040 FLASH EPROM 29C256-29C040 29C256-29C040 29EE 29EE /LE512-29EE LE512-29EE /LE020 LE020 28F256-28F020A 28F256-28F020A 28SF 28SF /VF 040 29F010-29F040 29F010-29F040 29F001-29F002 29F001-29F002 39SF 39SF /VF512 VF512 .. Tags: 29f010 PLCC *28C040* EEPROM 28C256 intel 29F010 intel 28F256 plcc intel 28F256 datasheet 29f010 at 29c040 flash eprom 49F/LV001 4*40 lcd 39sf 29F040 29F010 29F002 datasheet abstract.. |
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First line: 28C256-20 28C256 CAT28C256 256K-Bit CMOS E2PROM Fast Read Access Times: 120/150/200/250 Power CMOS Dissipation: -Active: Max. -Standby: Max. Simple Write Operation: -On-Chip Address Data Latches -Self-Timed Write Cycle with Auto-Clear Fast Write Cycle Time: -5ms CMOS Compatible Automatic Page Write Abstract: .. 19 n=i i/o-i A6 l—L. 11 18 n=i i/Oo A5 I—L- 12 17 n=i A0 A4 I I 13 16 n=i A-| A3 I—I— 14 15 znzi A2 28C256 F03 Stock No. 21030-03 9/97 2 This Material Copyrighted By Its Respective Manufacturer CAT28C256 .. Tags: 28C256 28C256-20 datasheet abstract.. |
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First line: 28C256 28C256 atmel ROM 28C256 microchip iUKKH I'typ] TAAC (ns) TCAC (ns) (ns) (ns) (ns) BO/STANDBY ipF) VOL/1 (V/BIA) VOH/ IVOH (V/mA) (Pf) 28C256-12 MICBOCHIP 0-70 5-5. 70/0.15 45/2.1 4/0. 28C256-120 SEEQ 60/3 2.4/4 28C256-15 MICROCHIP 0-70 5-5. 70/0.15 45/2.1 4/0. 28C256-20 MICROCHIP 0-70 5-5. 70 Abstract: .. VIL lax V VIH min V Ci lax ipF VOL/1 VOL lax V/BIA VOH/ IVOH min V/mA Co max Pf 28C256-12 MICBOCHIP 0-70 120 120 0 50 50 4. 5-5. 5 70/0.15 0.8 2.0 10 0. 45/2.1 2. 4/0. 4 10 28C256-120 SEEQ 0—70 .. Tags: ROM 28C256 microchip 28C256 atmel 28C256 datasheet abstract.. |
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First line: 28C256 CAT28C256 256K-Bit CMOS E2PROM Fast Read Access Times: 150/200/250 Power CMOS Dissipation: -Active: Max. -Standby: |_iA Max. Simple Write Operation: -On-Chip Address Data Latches -Self-Timed Write Cycle with Auto-Clear Fast Write Cycle Time: -10ms (5ms available) CMOS Compatible Automatic Pag Abstract: .. 19 n=i i/o-i A6 l—L. 11 18 n=i i/Oo A5 I—L- 12 17 n=i A0 A4 I I 13 16 n=i A-| A3 I—I— 14 15 znzi A2 28C256 F03 Stock No. 21030-02 4/97 2 This Material Copyrighted By Its Respective Manufacturer CAT28C256 .. Tags: 28C256 datasheet abstract.. |
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First line: 28C256 28C256 atmel 28C040 *28C040* ATMEL CORPORATION AT-28C040 EEPROM RELIABILITY DATA* Abstract: .. AT-28C256 AT-28C010 AT-28C010 . JULY 2003. 2325 Orchard Parkway San Jose CA. 95131. PAGE 2 OF 4. AT-28C040 AT-28C040 . 150 .. Tags: *28C040* 28C256 atmel 28C040 03028-BX102BMZC AT-28C040 |
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First line: CAT28C256 256K-Bit CMOS PARALLEL E2PROM Fast Read Access Times: 120/150/200 Power CMOS Dissipation: -Active: Max. -Standby: |_iA Max. Simple Write Operation: -On-Chip Address Data Latches -Self-Timed Write Cycle with Auto-Clear Fast Write Cycle Time: -5ms CMOS Compatible Hardware Software Write Prot Abstract: .. 28C256 F03 PIN FUNCTIONS Pin Name Function Pin Name Function A0-A14 A0-A14 Address Inputs WE Write Enable I/O0-I/O7 Data Inputs/Outputs Vcc 5V Supply CE Chip Enable Vss Ground OE Output Enable NC No .. Tags: datasheet abstract.. |
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First line: CAT28C256 32K-Bit Parallel EEPROM FEATURES Fast Read Access Times: 120/150ns Power CMOS Dissipation: Hardware Software Write Protection Automatic Page Write Operation: -Active: Max. -Standby: Max. Abstract: .. 28C256-12 28C256-15. Symbol Parameter Min. Max. Min. Max. Units. tRC Read Cycle Time 120 150 ns. tCE CE Access Time 120 150 ns. tAA Address Access Time 120 150 ns. tOE OE Access Time 50 70 ns. tLZ 1 CE Low .. Tags: CAT28C256 |
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First line: CAT28C256 256K-Bit Parallel EEPROM FEATURES Fast read access times: 120/150ns power CMOS dissipation: Hardware software write protection Automatic page write operation: -Active: -Standby: Abstract: .. 28C256-12 28C256-15. Symbol Parameter Min. Max. Min. Max. Units. tRC Read Cycle Time 120 150 ns. tCE CE Access Time 120 150 ns. tAA Address Access Time 120 150 ns. tOE OE Access Time 50 70 ns. tLZ 1 CE Low .. Tags: CAT28C256 |
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First line: CAT28C256 32K-Bit Parallel E2PROM FEATURES Fast Read Access Times: 120/150ns Power CMOS Dissipation: Hardware Software Write Protection Automatic Page Write Operation: -Active: Max. -Standby: Max. Abstract: .. 28C256-12 28C256-15. Symbol Parameter Min. Max. Min. Max. Units. tRC Read Cycle Time 120 150 ns. tCE CE Access Time 120 150 ns. tAA Address Access Time 120 150 ns. tOE OE Access Time 50 70 ns. tLZ 1 CE Low .. Tags: 25020 CAT28C256 |
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First line: 28C256-250* am28c256* Am28C256 Electrically Erasable PROM ADVANCE INFORMATION DISTINCTIVE CHARACTERISTICS only operation power-down current Military temperature range available 64-byte page write Low-power CMOS Software-write protection active current Minimum endurance 10,000 write cycles byte with Abstract: .. Family Part No. Ordering Part No.: 5% Vcc Tolerance 10% Vcc Tolerance 28C256-205 28C256 28C256-305 28C256-355 28C256-200 28C256-250 28C256-300 28C256-350 tACC <ns 200 250 300 350 tcE ns .. Tags: am28c256* 28C256-250* datasheet abstract.. |
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First line: nb^b^S 20e] mesi CATALYST CAT28C256/CAT28C256I 256K-Bit CMOS E2PROM Fast Read Access Times: 200/250/300 Power CMOS Dissipation: -Active: 30mA Max. -Standby: 150^A Max. Simple Write Operation: -On-Chip Address Data Latches -Self-Timed Write Cycle with Auto-Clear Abstract: .. Symbol Parameter 28C256-20 28C256I-20 28C256-25 28C256I-25 28C256-30 28C256I-30 Units Min. Max. Min. Max. Min. Max. tRC Read Cycle Time 200 250 300 ns tCE ÜE Access Time 200 250 300 ns tAA Address .. Tags: datasheet abstract.. |
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First line: CAT28C256/CAT28C256I 256K-Bit CMOS E2PROM Fast Read Access Times: 200/250/300 Power CMOS Dissipation: -Active: 30mA Max. -Standby: 150jiA Max. Simple Write Operation: -On-Chip Address Data Latches -Self-Timed Write Cycle with Auto-Clear Fast Nonvolatile Write Cycle: -10ms (5ms available) CMOS Compat Abstract: .. Symbol Parameter 28C256-20 28C256I-20 28C256-25 28C256I-25 28C256-30 28C2561-30 Units Min. Max. Min. Max. Min. Max. tRC Read Cycle Time 200 250 300 ns tCE CE Access Time 200 250 300 ns tAA Address .. Tags: datasheet abstract.. |
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First line: st 27c256b 27c65 intel 27c512 eprom 28C64 EPROM programmer Winbond 27c512 AD62 (479-913) AD50 (479-834) Package Converters E(E)PROMs FLASH (PLCC) Product Code Pins Pins Base Wiring Code Package Base pitch" Miscellaneous AD62 Abstract: .. NQ2864 NQ2864 NQ2864H NQ2864H 27C65 27C65 28C64 28C64 28C65 28C65 28C256 28C256A 28H256 28H256 52B33 52B33 /H. Signetics 27C64A-A 27C64A-A 27C256-A 27C256-A 27C512-A 27C512-A . ST. M27C64A-C M27C64A-C TS27C64AFN TS27C64AFN M27C256B-C M27C256B-C ST27C256FN ST27C256FN M27C512-C M27C512-C M27C512-C M27C512-C M27C405-K M27C405-K 27C64 27C64 27C256 27C256 .. Tags: Winbond 27c512 28C64 EPROM programmer 27c65 st 27c256b X2864A X28256 ti 27c256 SEEQ 52B33 Seeq N27C64 N27C256* m27c405 lcc 28 socket intel 27c512 eprom intel 27C512 datasheet abstract.. |
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First line: CAT28C256 Parallel EEPROM CAT28C256 fast, power, V-only CMOS Parallel EEPROM organized 8-bits. requires simple interface in-system programming. On-chip address data latches, self-timed write cycle with auto-clear power up/down write protection eliminate additional timing protection hardware. DATA Po Abstract: .. 28C256−12 28C256−15. Units Min Max Min Max. tRC Read Cycle Time 120 150 ns. tCE CE Access Time 120 150 ns. tAA Address Access Time 120 150 ns. tOE OE Access Time 50 70 ns. tLZ Note 8 CE Low to Active Output 0 .. Tags: CAT28C256 |
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First line: CAT28C256 256K-Bit Parallel EEPROM FEATURES Fast read access times: 120/150ns power CMOS dissipation: Abstract: .. 28C256-12 28C256-15. Symbol Parameter Min. Max. Min. Max. Units. tRC Read Cycle Time 120 150 ns. tCE CE Access Time 120 150 ns. tAA Address Access Time 120 150 ns. tOE OE Access Time 50 70 ns. tLZ 1 CE Low .. Tags: 28c256 CAT28C256 |
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First line: CAT28C256 256K-Bit Parallel EEPROM FEATURES Fast read access times: 120/150ns power CMOS dissipation: Abstract: .. 28C256-12 28C256-15. Symbol Parameter Min. Max. Min. Max. Units. tRC Read Cycle Time 120 150 ns. tCE CE Access Time 120 150 ns. tAA Address Access Time 120 150 ns. tOE OE Access Time 50 70 ns. tLZ 1 CE Low .. Tags: 28C256-15 CAT28C256 |
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First line: 2023 Series Memory Security This document gives full description types memory devices contained 2023 series signal generator information clear memory stores when instrument removed from secured application. very latest specifications visit Abstract: .. Description Qty. 1 EAROM, 28C256, 32 kbytes x 8 256 kbit : IC7 Volatility This electrically alterable non-volatile memory is retained at power-down but may be changed as. required. Contents .. Tags: earom* datasheet abstract.. |
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First line: 2026 Series Memory Security This document gives full description types memory devices contained 2026 series signal generator information clear memory stores when instrument removed from secured application. very latest specifications visit Abstract: .. Description Qty. 1 EAROM, 28C256, 32 kbytes x 8 256 kbit , IC14 IC14 Volatility Electrically alterable non-volatile memory. Content is retained at power-down but may be. changed as required. Contents .. Tags: earom* datasheet abstract.. |
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First line: 2030, 2040 2050 Series Memory Security This document gives full description types memory devices contained 2030, 2040 2050 series signal generator information clear memory stores when instrument removed from secured application. very latest specifications visit Abstract: .. 1, 28C64 28C64 , 8 kbytes x 8 64 kbit : IC114 IC114 instru-ments fitted with option 8: Qty. 1, 28C256, 32 kbytes x 8 256 kbits : IC114 IC114 Volatility Electrically alterable non-volatile memory. Content is retained .. Tags: HM6264 RAM 28c64 ram earom IC120 earom* datasheet abstract.. |
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First line: ATMEL CORPORATION AT-28HC64 CMOS EEPROM RELIABILITY DATA* Abstract: .. AT-28HC191 AT-28HC191 /291 AT-28C256 AT-28HC16 AT-28HC16 /17. AT-28PC64 AT-28PC64 . JULY 2003. 2325 Orchard Parkway San Jose CA. 95131. PAGE 2 OF 6. AT-28HC64 AT-28HC64 . 125 C DYNAMIC OPERATING LIFE TEST. LOT DATE SAMPLE TOTAL NUMBER. NUMBER .. Tags: mil-m-38535 28HC64 28hc16 28C256 atmel 28C256 AT-28HC64 |
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First line: 28c64b ATMEL CORPORATION AT-28C64B PEROM RELIABILITY DATA Abstract: .. AT-28C256 AT-28HC64B AT-28HC64B . APRIL 2005. 2325 Orchard Parkway San Jose CA. 95131. PAGE 2 OF 8. AT-28C64B AT-28C64B . 150 C DYNAMIC OPERATING LIFE TEST. LOT DATE SAMPLE TOTAL NUMBER. NUMBER CODE SIZE CKT-HRS K OF FAILURES .. Tags: 28C64B 28C256 atmel AT-28C64B |
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First line: catalyst semiconductor nbsbls 0001417 mcst K-ff-2 IIIIICRTRLYST lllfliinicsNOveroR 223] CALLE UJNA. SASTA CUJtA, 95054 Taltpk**: ffttfj Ui-TfOO CAT28C256 CMOS E2PROM Abstract: .. > Vcc - +5V 10%, ta - 0 C to +70 C Symbol Parameter 28C256-20 min max 28C256-25 min max 26C256-30 26C256-30 min max Units tac Read Cycle Time 200 250 300 ns tee CË Access Time 200 250 300 ns tAA Address Access .. Tags: datasheet abstract.. |
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First line: KM28C256-15 -112- iUEKH TAAC (ns) TCAC (ns) (ns) (ns) DO/STAI) (ml) VOL/ (V/mA) VOH/1 (V/mA) AT28HC256L-90 ATMEL 5-5. 80/5 45/8 HITACHI 30/1 4/2.1 4/0. HN58C256P-20 HITACHI 5-5. 30/1 4/2.1 4/0. HN58C256P/FP-20 HITACHI 5-5. 33/0.2 4/2.1 4/0. KM28C256-15 5-5. 69/1 4/2.1 4/0. Abstract: .. 28C256 Seeq . mzfa-ytm Ao —Al4 A I/O  fts CE ÖE WE H X X High-Z Stand-by- L L H DO Read L H L DI Write X X H High-Z Write Inhibit X L X High-Z Write Inhibit i ß MZ> 262144 ROM-tJU / y 77 l/Oo —I .. Tags: KM28C256-15 datasheet abstract.. |
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First line: ELECTRONICS b427525 0035411 TTfl PD100500 262,144 1-Bit Electronics Inc. 100K BiCMOS ThejuPD100500 very high-speed BiCMOS with full voltage temperature compensation 100K interface. unique design uses blended CMOS bipolar peripheral circuits N-channel memory cells. device organized 262,144 words desi Abstract: .. 27 EEPROMs mPD Organization 28C04 28C04 512x8 512x8 27a 28C05 28C05 512x8 512x8 27b 28C64 28C64 8K x 8 27c 28C256 32Kx 32Kx 8 27d N E C ELECTRONICS INC. NEG Electronics Inc.. NEe. 61E D II 6427525 0035411 TT8 IINECE pPD100500 pPD100500 . 262,144 x 1 .. Tags: datasheet abstract.. |
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First line: *28C040* 28c010 ATMEL CORPORATION Tel:(408)441-0311 Fax:(408)436-4200 AT-28C010 CMOS EEPROM RELIABILITY DATA* 150°C DYNAMIC OPERATING LIFE TEST CYCLE TEST 200°C RETENTION BAKE 125°C OPERATING LIFE TEST (PLASTIC) 150°C RETENTION BAKE (PLASTIC) PSIG PRESSURE 85°C/85% RELATIVE HUMID Abstract: .. AT-28C256 AT-28C040 AT-28C040 . JULY 2003. 2325 Orchard Parkway San Jose CA. 95131. PAGE 2 OF 10. AT-28C010 AT-28C010 .. Tags: 28c010 *28C040* 4b23* 28C256 atmel 131571 AT-28C010 AT-28C256 AT-28C040 |
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First line: AT28C16E 28C16 AT28C16 Fast Read Access Time Fast Byte Write Self-Timed Byte Write Cycle Internal Address Data Latches Internal Control Timer Automatic Clear Before Write Direct Microprocessor Control DATA POLLING Power Active Current CMOS Standby Current High Reliability Endurance: Cycles Data Rete Abstract: .. New designs should utilize the 28C256 ceramic. offerings. The following table lists standard Atmel products that can be ordered. Device Numbers Speed Package and Temperature Combinations .. Tags: ATMEL AT28C16E 15PC AT28C16 28C256 atmel 28C16 AT28C16 |
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First line: 28C17 atmel AT28C17 Fast Read Access Time Fast Byte Write Self-Timed Byte Write Cycle Internal Address Data Latches Internal Control Timer Automatic Clear Before Write Direct Microprocessor Control DATA POLLING READY/BUSY Open Drain Output Power Active Current CMOS Standby Current High Reliability E Abstract: .. New designs should utilize the 28C256 ceramic. offerings. The following table lists standard Atmel products that can be ordered. Device Numbers Speed Package and Temperature Combinations .. Tags: 28C17 atmel 28C256 atmel AT28C17 |
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First line: fuse smd code N ppi interface 1007 PACKAGE T 4-LEAD SMD TOP VIEW VDD 1. GND 2 smd transistor a4 197A807 Radiation Hardened Programmable Read Only Memory (PROM) 197A807 Abstract: .. hardened PROM is pinout, function and package compatible with commercial 28C256 series 32K x EEPROMs, such as SEEQ 28C256 and Atmel AT28C256. The PROM is fabricated with BAE SYSTEMS’ QML-qualified .. Tags: smd transistor a4 PACKAGE T 4-LEAD SMD TOP VIEW VDD 1. GND 2 ppi interface 1007 smd transistor A13 fuse smd code N BAE Systems 28C256 atmel 197A807 datasheet abstract.. |
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First line: 238A790 Radiation Hardened Programmable Read Only Memory (PROM) 3.3V 238A790 Abstract: .. hardened PROM is pinout, function and package compatible with commercial 28C256 series 32K x 8 EEPROMs, such as SEEQ 28C256 and Atmel AT28C256. The PROM is fabricated with BAE SYSTEMS’ QML-qualified .. Tags: wy smd transistor SEEQ TECHNOLOGY prom 238A790 fuse smd code N 28C256 atmel 238a790 datasheet abstract.. |
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First line: Fast Read Access Time Fast Byte Write Self-Timed Byte Write Cycle Internal Address Data Latches Internal Control Timer Automatic Clear Before Write Direct Microprocessor Control DATA POLLING READY/BUSY Open Drain Output Power Active Current CMOS Standby Current High Reliability Endurance: Cycles Dat Abstract: .. New designs should utilize the 28C256 ceramic offer-ings. Ordering Information 1 tACC ns ICC mA Ordering Code Package Operation Range Active Standby. 150 30 0.1 AT28C17 AT28C17 E -15JC -15JC . AT28C17 AT28C17 .. Tags: atmel 530 AT28C17 28C256 atmel datasheet abstract.. |
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First line: AT28C16E 28C16 atmel Fast Read Access Time Fast Byte Write Self-Timed Byte Write Cycle Internal Address Data Latches Internal Control Timer Automatic Clear Before Write Direct Microprocessor Control DATA POLLING Power Active Current CMOS Standby Current High Reliability Endurance: Cycles Data Retent Abstract: .. New designs should utilize the 28C256 ceramic offerings. Ordering Information 1 tACC ns ICC mA Ordering Code Package Operation Range Active Standby. 150 30 0.1 AT28C16 AT28C16 E -15JC -15JC . AT28C16 AT28C16 .. Tags: ATMEL AT28C16E 15PC atmel 530 at28c16 eeprom 28C256 atmel 28C16 atmel 28C16 datasheet abstract.. |
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First line: AT25C01* p301 stag manual p301 stag eprom 24c04 at28pc64* Device Support List Version 8.04 Please consult device specific information this list. Stag Programmers Ltd. Silver Court, Watchmead Welwyn Garden City, Herts 1LT, U.K. 01707 332148 01707 371503 Abstract: .. 002FC4 002FC4 28C256-XX I J,D,P 0025C1 0025C1 93C06 93C06 P 0025C3 0025C3 93C46 93C46 P 0025C4 0025C4 93C56 93C56 D 0025C5 0025C5 93C66 93C66 D. EPROM 0020F2 0020F2 27C64XXX 27C64XXX /K,P 0020C2 0020C2 27HC64XXX 27HC64XXX /J, P 0020F3 0020F3 27C128XXX 27C128XXX /J,P 0020F4 0020F4 27C256XXX 27C256XXX /J, P 0020C4 0020C4 27HC256 27HC256 .. Tags: at28pc64* eprom 24c04 p301 stag p301 stag manual AT25C01* XL2864A* x28c64 X28C256 X2864A* X24C08 tms2764 pdf TMS2764 tms2532a jl eprom tms2532a* tms2532 jl TMS2532 datasheet abstract.. |
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First line: TMS2532A 93C46-P* p301 stag M2864 at28pc64* Device Support List Version 8.03 Please consult device specific information this list. Stag Programmers Ltd. Silver Court, Watchmead Welwyn Garden City, Herts 1LT, U.K. 01707 332148 01707 371503 Abstract: .. 002FC4 002FC4 28C256-XX I J,D,P 0025C1 0025C1 93C06 93C06 P 0025C3 0025C3 93C46 93C46 P 0025C4 0025C4 93C56 93C56 D 0025C5 0025C5 93C66 93C66 D. EPROM 0020F2 0020F2 27C64XXX 27C64XXX /K,P 0020C2 0020C2 27HC64XXX 27HC64XXX /J, P 0020F3 0020F3 27C128XXX 27C128XXX /J,P 0020F4 0020F4 27C256XXX 27C256XXX /J, P 0020C4 0020C4 27HC256 27HC256 .. Tags: at28pc64* M2864 p301 stag 93C46-P* x28c64 X28C256 X2864A X28256 X24C08 X24C04 tms2764 pdf tms2532a jl eprom TMS2532A tms2532 jl TMS2532 datasheet abstract.. |
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First line: Toshiba tmm24128 ae29F2008* rom AE29f2008 ATMEL eeprom 2816A ae29F2008 SALES/INFORMATION HOTLINE: (0)1226 767404 GLV32 DEVICE SUPPORT LIST Technology August 2001 devices pins less supported without need adapter. Adapter number (see adapter list). Required PLCC, SOIC greater than pins. Parts ending w Abstract: .. 2864H 2864H PLCC 25 28C010 28C010 28C256 DIP 28C256 PLCC 25 28C256K DIP 28C256K PLCC 25 28C64 28C64 DIP 28C64 28C64 PLCC 25 28C64A 28C64A DIP 28C64A 28C64A PLCC 25 28C65 28C65 DIP 28C65 28C65 PLCC 25 38C16 38C16 38C32 38C32 .. Tags: ae29F2008 ATMEL eeprom 2816A rom AE29f2008 ae29F2008* Toshiba tmm24128 xicor X2816A Xicor 28C010 xicor 2816A X28HC256 x28c64 X28C256 X2864B X2864A* X2816C* ws27c020L Waferscale Integration GLV32 |
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First line: PLESSEY MARCH 1990 PRELIMINARY INFORMATION PNC28C256 CMOS/SNOS EEPROM HIGH PERFORMANCE 32KX8 ELECTRICALLY ERASABLE PROM PNC28C256 high performance EEPROM fabricated with Plessey Semiconductors' proprietary CMOS/SNOS technology. This full-featured device follows JEDEC-approved pinout 5V-only operatio Abstract: .. [ 3 As [ 4 As [ 5 A4 [ 6 A3 [ 7 A2 [ 8 A, [ 9 AO [ 1Ü DO0 L 11 DO t 12 DO2 L 13 vss L 14 A A 7 12 4 3 T7 PNC 28C256 DC ] Vcc ]w ] ]a8 ] A„ All ]G ] A10 E ] do7 ] do6 ] " S ] DO* ] dq3 DO DO Vcc NC DO DO DO 1 2 3 4 5 Pin Name Aq-A14 Aq-A14 w dq0-dq7 E .. Tags: datasheet abstract.. |
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First line: 28C64B-25 Microchip 28C64B CMOS Electrically Erasable PROM High Speed Performance 70,90,120,150,200, 250ns Access Time CMOS Technology Power Dissipation 70mA Active 150|iA Standby Fast Write Cycle Times Abstract: .. to +70'C Industrial: Tamb = -40'C to +85'C Parameter Symbol 28C256 - 90/12/15/20/25 Units Conditions Min Typ Max Write Cycle Time twc 1 2 ms Byte Write Cycle Time tBWC - 1 2 ms see Note 3 Address Set-Up .. Tags: 28C64B-25 datasheet abstract.. |
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First line: 28C64 EEPROM eeprom 28c64 eel -16-2005 68HC12B32 68HC12B32* 68HC12 Development Manual 16-May-06 (Version 3.58) 4744: Microprocessor Applications Page 1/24 Introduction Installation Quick Testing. Header Definitions. Jumper Definitions. Memory Interrupt Vectors. CPLD/Header Cross Reference Table Sche Abstract: .. EEPROM 28C64 28C64 or 28C256 or EPROM 27C256 27C256 or 27C64 27C64 JTAG Header. UF 68HC12 68HC12 Development Kit Manual 16-May-06 16-May-06 Version 3.58 Page 15/24. EEL 4744: Microprocessor Applications. Note: The bubbles .. Tags: eel -16-2005 28C64 EEPROM eeprom 28c64 datasheet 0809 l Altera 7032 68HC12B32* 68hc12 28C64 0841 datasheet abstract.. |
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First line: CAT28C257 256K-Bit CMOS PARALLEL EEPROM FEATURES Fast read access times: 120/150 power CMOS dissipation: Automatic page write operation: Abstract: .. 28C256 F06. CE. OE. WE. tRC. DATA OUT DATA VALID DATA VALID. tCE. tOE. tOH. tAA. tOHZ tHZ. VIH. HIGH-Z. tLZ. tOLZ .. Tags: CAT28C257 |
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First line: CAT28C257 256K-Bit CMOS PARALLEL EEPROM FEATURES Fast read access times: 120/150 power CMOS dissipation: Automatic page write operation: Abstract: .. 28C256 F06. CE. OE. WE. tRC. DATA OUT DATA VALID DATA VALID. tCE. tOE. tOH. tAA. tOHZ tHZ. VIH. HIGH-Z. tLZ. tOLZ .. Tags: CAT28C257 |
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First line: AT28C256 Fast Read Access Time Automatic Page Write Operation Internal Address Data Latches 64-Bytes Internal Control Timer Fast Write Cycle Times Page Write Cycle Time: Maximum 64-Byte Page Write Operation Power Dissipation Active Current CMOS Standby Current Hardware Software Data Protection DATA Abstract: .. Atmel’s 28C256 has additional features to ensure high quality and manufacturability. The device utilizes internal error correction for extended endurance and improved data retention characteristics .. Tags: ATMEL at28c256 AT28C256 5962-88525 15 ZX 28C256 atmel AT28C256 |
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First line: AT28PC64 M5M27C102jk* nec d2732 PH29EE010* PH29EE010 Device Support List Version Please consult device specific information this list. Stag Programmers Ltd. Silver Court, Watchmead, Welwyn Garden City, Herts 1LT, U.K. 1707 332148 1707 371503 sales@stag.co.uk techsupport@stag.co.uk www.stag.co.uk Abstract: .. .0 M821 M821 002FCC 002FCC 28C17A 28C17A F -XX I J,P 1.0 M811 M811 102FCC 102FCC 28C17A 28C17A F -XX I L 1.0 M821 M821 002FC4 002FC4 28C256-XX I J,D,P 1.0 M811 M811 102FC4 102FC4 28C256-XX I L 1.0 M821 M821 . 002FC2 002FC2 28C64A 28C64A F -XX I J,P 1.0 M811 M811 102FC2 102FC2 28C64A 28C64A .. Tags: PH29EE010 PH29EE010* nec d2732 M5M27C102jk* AT28PC64 X28HC256 X28C256 X2864A W29C020P TS27C64A tms2532 jl TMS2516 JL TC57256AD STAG P800 SGS M27C256B SEEQ eprom datasheet abstract.. |
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First line: at27c256 data retention AT29LV020 Parallel EEPROM 256Kbit Qualification Summary Component Design Construction Description Test Summary Oper Life Test Data Retention Endurance Humidity Autoclave Temp Cycle Latch-up Electrical Dist./Char. (available request) Plastic Package (TSOP, SOIC, PLCC) Applicab Abstract: .. TYPE: AT19802 AT19802 28C256 LOT#: 8H0730C 8H0730C DATE CODE: 9836. SEQ NO. TEST TEST. METHOD METHODS & CONDITIONS PER MIL-STD-883 MIL-STD-883 QTY. IN. QTY OUT. RE-JECTS. DATE STATUS. 1 ELECT. TEST. 5005 Group A, Subgroup 1 TA = 25 .. Tags: TSOP 62 Package TSOP 48 m108 ATMEL CDIP atmel at28c256 at45db321b AT45DB081A AT29LV020 AT27C512R at27c256 data retention 28C256 atmel AT28BV256 AT28C256 AT28HC256 |
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First line: ATMEL at28c256 Fast Read Access Time Automatic Page Write Operation Internal Address Data Latches Bytes Internal Control Timer Fast Write Cycle Times Page Write Cycle Time: Maximum 64-byte Page Write Operation Power Dissipation Active Current CMOS Standby Current Hardware Software Data Protection DA Abstract: .. Atmel’s 28C256 has additional features to ensure high quality and manufacturability. The device utilizes internal error correction for extended endurance and improved data retention characteristics .. Tags: ATMEL at28c256 28C256 atmel AT28C256 |
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First line: Fast Read Access Time Automatic Page Write Operation Internal Address Data Latches Bytes Internal Control Timer Fast Write Cycle Times Page Write Cycle Time: Maximum 64-Byte Page Write Operation Power Dissipation Active Current CMOS Standby Current Hardware Software Data Protection DATA Polling Writ Abstract: .. Atmel’s 28C256 has additional features to ensure high quality and manufacturability. The device utilizes internal error correction for extended endurance and improved data retention characteristics .. Tags: AT28C256 |
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First line: 5962-87514 AT28C64-15DM/883 transistor smd list Products Introduction Product Listing Each Standard Microcircuit Drawing (SMD) part number that Atmel supplies corresponds Atmel /883 part number. products compliant MILSTD-883, paragraph 1.2.1 requirements applicable standard microcircuit drawing. tab Abstract: .. 28C256 Drawing Number Device Type. Case Outline. Lead Finish. Circui Description End Write Indicator Write Mode. Access Time ns. Write. Speed ms Endurance Cycles 5962-88525 01 U, X, Y, Z X, A 32K .. Tags: AT28C64-15DM/883 5962-87514 SMD CODE list AT28C64-35DM/883* transistor smd list smd cross reference SMD codes smd code led smd atmel military part numbering ATMEL Cross Reference AT28HC64B-70DM AT28C64B-20DM* AT28C64-20DM/883* at28c64-20dm datasheet abstract.. |
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