| Contextual Datasheet Results |
1 - 50 of about 224 for 2819 |
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First line: BiCMOS DUAL-PORT STATIC MODULE Integrated Device Technology Inc. IDT7M1014 FEATURES High-density BiCMOS Abstract: .. ©1996 Integrated Device Technology, Inc. DSC-2819/4. 7.03 1. DESCRIPTION The IDT7M1014 is a 4K x 36 asynchronous high-speed BiCMOS Dual-Port static RAM module constructed on a co-fired ceramic .. datasheet abstract.. |
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First line: CRO2925A-LF PHASE NOISE Abstract: .. 2819 2833 2847 2862 2876 2892 2910 2928 2947 2964. FREQUENCY MHz Physical Dimensions SOLDER MASK. GOLD PLATED PADS. NOTE: ALL DIMENSIONS ARE IN INCHES TOL: XXX: +/- 0.010. Z-COMM. XXXXXXXX-LF W/O .. datasheet abstract.. |
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First line: CRO2856A-LF PHASE NOISE Abstract: .. 2819 2827 2834 2839 2845 2851 2857 2863 2869 2876 2883 2890. FREQUENCY MHz Physical Dimensions SOLDER MASK. GOLD PLATED PADS. NOTE: ALL DIMENSIONS ARE IN INCHES TOL: XXX: +/- 0.010. Z-COMM. XXXXXXXX .. datasheet abstract.. |
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First line: Si4174DYRC Vishay Siliconix Thermal Model Parameters DESCRIPTION parametric values thermal model have Abstract: .. RT3 13.5765 N/A 10.2819. RT4 21.7290 N/A 5.6032. Thermal Capacitance Joules/°C Junction to Ambient Case Foot. CT1 1.7094 m N/A 355.5413 u. CT2 1.4502 N/A 46.2260 m. CT3 24.9886 m N/A 121.2396 m. CT4 .. datasheet abstract.. |
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First line: V805ME08-LF VOLTAGE CONTROLLED OSCILLATOR PHASE NOISE FEATURES Abstract: .. 2256 2379 2475 2556 2624 2691 2757 2819 2880 2941 3002. VOLTAGE CONTROLLED OSCILLATOR. © Z-Communications, Inc. Page 2 Printed in the U.S.A.. V805ME08-LF. TUNING CURVE, typ. POWER CURVE, typ. PAGE .. datasheet abstract.. |
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First line: CRO2850A-LF VOLTAGE CONTROLLED OSCILLATOR PHASE NOISE FEATURES Abstract: .. 2819.78 2823.58 2827.37 2831.13 2835.22 2839.3 2843.87 2848.47 2852.75 2857.75. VOLTAGE CONTROLLED OSCILLATOR. © Z-Communications, Inc. Page 2 Printed in the U.S.A.. CRO2850A-LF. TUNING CURVE .. datasheet abstract.. |
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First line: Ordering number EN2819D SVC351 Diffused Junction Type Silicon Diode Composite Varactor Diode Receiver Abstract: .. 71598HA KT /2179MO, TS No.2819-1/3. SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquarters TOKYO OFFICE, Tokyo Bldg., 1-10 , Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN. Ordering .. datasheet abstract.. |
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First line: V810ME13-LF PHASE NOISE Abstract: .. 2489 2577 2656 2732 2819 2901 2975 3043 3103 3153 3195 3226. FREQUENCY MHz Physical Dimensions. P1 Vt. P2 RF OUT. P3 Vcc. PIN CONFIGURATION. REST GROUND. PACKAGE H. MINI-14H 0.220. 0.160 MINI-14H-LOW. 0 .. datasheet abstract.. |
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First line: V805ME08-LF PHASE NOISE Abstract: .. 2256 2379 2475 2556 2624 2691 2757 2819 2880 2941 3002. FREQUENCY MHz Physical Dimensions. Z-COMM. XXXXXXXX-LF W/O# D/C PACKAGE H. MINI-14S 0.220. 0.160 MINI-14S-LOW. 0.130 MINI-14S-L. NOTE: ALL .. datasheet abstract.. |
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First line: CRO2850A-LF PHASE NOISE Abstract: .. 2819.78 2823.58 2827.37 2831.13 2835.22 2839.3 2843.87 2848.47 2852.75 2857.75. FREQUENCY MHz Physical Dimensions SOLDER MASK. GOLD PLATED PADS. NOTE: ALL DIMENSIONS ARE IN INCHES TOL: XXX .. datasheet abstract.. |
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First line: SiE832DFRC Vishay Siliconix Thermal Model Parameters DESCRIPTION parametric values thermal model have Abstract: .. RT4 48.7717 216.4667 m 4.2819 m. Thermal Capacitance Joules/°C Junction to Ambient Case Drain Top Case Source. CT1 2.1640 m 46.0378 m 1.1574 m. CT2 230.0674 m 25.0865 m 17.2324 m. CT3 42.6031 m 17.6767 .. datasheet abstract.. |
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First line: SiE830DFRC Vishay Siliconix Thermal Model Parameters DESCRIPTION parametric values thermal model have Abstract: .. RT4 48.7717 216.4667 m 4.2819 m. Thermal Capacitance Joules/°C Junction to Ambient Case Drain Top Case Source. CT1 2.1640 m 45.8985 m 1.1574 m. CT2 230.0674 m 26.2866 m 17.2324 m. CT3 42.6031 m 18.2078 .. datasheet abstract.. |
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First line: Abstract: .. 2819 10000 4 T1258N K0,024W 3 0 2. 35 535 1790 4 T398N KA20 3 0 2. 928 3103 4 T828N KA20 3 0 2. 1109 3795 4 T1078N KA20 3 0 2. 1416 4427 4 T1258N KA20 3 0 2. 1737 6774 4 T828N K0,024W 3 0 2. 1974 7777 4 T1078N K0,024W 3 0 2 .. datasheet abstract.. |
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First line: Abstract: .. 2819 3333 4 T1258N K0,024W 1 0 2. 35 535 596 4 T398N KA20,2V 1 0 2. 928 1034 4 T828N KA20,2V 1 0 2. 1109 1265 4 T1078N KA20,2V 1 0 2. 1416 1475 4 T1258N KA20,2V 1 0 2. 1737 2258 4 T828N K0,024W 1 0 2. 1974 2592 4 T1078N .. datasheet abstract.. |
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First line: Si7980DPRC Vishay Siliconix Thermal Model Parameters DESCRIPTION parametric values thermal model have Abstract: .. RT3 20.2819 17.1741 571.3000 m 521.7000 m N/A. RT4 45.4954 45.4251 2.1028 1.9774 N/A. Thermal Capacitance Joules/°C Junction to Ambient Channel 1 Ambient Channel 2 Case Channel 1 Case Channel .. datasheet abstract.. |
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First line: Datasheet 9947A Rev. Compatible SJ-2810 Series Description SJ-2810 Series quartz crystal Abstract: .. better stability, extended temperature range, or tighter symmetry, NEL can provide a SJ-2819 series oscillator to serve your needs. To let us know your special requirements, complete our Specialty .. datasheet abstract.. |
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First line: Datasheet 9205C Rev. Compatible HS-2800 / 2810 Series Description HS-2800 / 2810 Series quartz crystal Abstract: .. , or tighter symmetry, NEL can provide a HS-2809/2819 series oscillator to serve your needs. To let us know your special requirements, complete our Specialty Oscillator sheet. We will respond .. datasheet abstract.. |
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First line: Technical Data Ceramic Resonator MURATA Part No. CSTCE8M00G52-R0 Applied HD64336057GFP TOYAMA MURATA Abstract: .. 5 8036.088 8013.500 0.2819. _ X 8026.825 8007.440 0.2421. muRata Standard Circuit. Vdd = 5.0 [V] CERALOCK® : CSTCE8M00G52-R0. C1 = 10 [pF] C2 = 10 [pF] Rf = 1 [Mohm] 1 2 3 4 7. Rf. C2 C1. Fout. 14. CERALOCK. 5pF 1MΩ .. datasheet abstract.. |
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First line: Technical Data Ceramic Resonator MURATA Part No. CSTCE8M00G52-R0 Applied HD64336037GFP TOYAMA MURATA Abstract: .. 5 8036.088 8013.500 0.2819. _ X 8026.825 8007.440 0.2421. muRata Standard Circuit. Vdd = 5.0 [V] CERALOCK® : CSTCE8M00G52-R0. C1 = 10 [pF] C2 = 10 [pF] Rf = 1 [Mohm] 1 2 3 4 7. Rf. C2 C1. Fout. 14. CERALOCK. 5pF 1MΩ .. datasheet abstract.. |
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First line: Technical Data Ceramic Resonator MURATA Part No. CSTCE8M00G52A-R0 Applied HD64336057GFP TOYAMA MURATA Abstract: .. 5 8036.088 8013.500 0.2819. _ X 8026.825 8007.440 0.2421. muRata Standard Circuit. Vdd = 5.0 [V] CERALOCK® : CSTCE8M00G52-R0. C1 = 10 [pF] C2 = 10 [pF] Rf = 1 [Mohm] 1 2 3 4 7. Rf. C2 C1. Fout. 14. CERALOCK. 5pF 1MΩ .. datasheet abstract.. |
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First line: Technical Data Ceramic Resonator MURATA Part No. CSTCE8M00G52A-R0 Applied HD64336037GFP TOYAMA MURATA Abstract: .. 5 8036.088 8013.500 0.2819. _ X 8026.825 8007.440 0.2421. muRata Standard Circuit. Vdd = 5.0 [V] CERALOCK® : CSTCE8M00G52A-R0. C1 = 10 [pF] C2 = 10 [pF] Rf = 1 [Mohm] 1 2 3 4 7. Rf. C2 C1. Fout. 14. CERALOCK. 5pF 1MΩ .. datasheet abstract.. |
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First line: -8.9 I AV AVERAGE RECTIFIED CURRENT Single phase half wave Resistive Inductive load Abstract: .. ,,2819 ,289. ,,,.8,9. , , ,,8,9. ,,8119 ,,829. # ,,1:8,,9 ,,8.9. ,,,8,,9 ,,,28,,9. $ ,,,8,1.9 ,,,819 .. datasheet abstract.. |
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First line: Abstract: .. 2819 10000 4 T1258N K0,024W 3 0 2. 35 535 1790 4 T398N KA20 3 0 2. 928 3103 4 T828N KA20 3 0 2. 1109 3795 4 T1078N KA20 3 0 2. 1416 4427 4 T1258N KA20 3 0 2. 1737 6774 4 T828N K0,024W 3 0 2. 1974 7777 4 T1078N K0,024W 3 0 2 .. datasheet abstract.. |
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First line: Abstract: .. 2819 3333 4 T1258N K0,024W 1 0 2. 35 535 596 4 T398N KA20,2V 1 0 2. 928 1034 4 T828N KA20,2V 1 0 2. 1109 1265 4 T1078N KA20,2V 1 0 2. 1416 1475 4 T1258N KA20,2V 1 0 2. 1737 2258 4 T828N K0,024W 1 0 2. 1974 2592 4 T1078N .. datasheet abstract.. |
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First line: Abstract: .. 2819 4406 50 D748N K0,12F 6 1 0. 3700 4952 120 D1029N K0,08F 3 2 0. 5765 7195 120 D2209N K0,08F 3 2 0. 6241 7999 120 D2659N K0,08F 3 2 0. 7182 9701 120 D2209N K0,05F 6 1 0. 7949 11194 120 D2659N K0,05F 6 1 0. 12312 13043 .. datasheet abstract.. |
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First line: Princeton Technology Corp. Driver DESCRIPTION Tel PT6601 Abstract: .. 28 O28 [2819.8, 51.5] 29 O29 [2924.8, 51.5] 30 O30 [2873.3, 407.5] 31 O31 [2873.3, 512.5] 32 O32 [2873.3, 617.5] 33 O33 [2873.3, 722.5] 34 O34 [2873.3, 827.5] 35 O35 [2873.3, 932.5] 36 O36 [2873 .. datasheet abstract.. |
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First line: 10A030 Watts Volts Class Linear GENERAL DESCRIPTION 10A030 COMMON EMITTER transistor capable Abstract: .. 24.2220 0.22621 23.0871 0.73380 148.787 2.900 0.86562 104.136 0.44612 -26.2819 0.23776 20.2884 0.73507 145.901 3.000 0.86077 100.696 0.43476 -28.1578 0.24963 17.4908 0.73428 142.942 .. datasheet abstract.. |
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First line: flow sensor Features Solid State reliability cost small size Long-term stability parts Abstract: .. 0 2819. 0.542 2625. 1.051 2534. 2.049 2455. 3.099 2409. 4.086 2379. 5.010 2361. 5.997 2343. 7.089 2327. 8 .. datasheet abstract.. |
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First line: Remote Accessory Potentiometer CBC-200 CBC-300 Controls. P-269-2 819-0410 Installation Operating Instructions Failure Abstract: .. Installation & Operating Instructions P-269-2819-0410. 2 Warner Electric • 800-825-9050 819-0483. Failure to follow these. instructions may result in product damage, equipment damage, and .. datasheet abstract.. |
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First line: SECTION GROUP DRY-TYPE DISTRIBUTION TRANSFORMERS DELTA PRIMARY VOLTS 208Y / 120 SECONDARY VOLTS USED Abstract: .. 500.0 TC-53319-3S 57.80 146.8 45.00 114.3 41.50 105.4 2819 1278.7 F NA WS-A-7 22‐E. * NOTE: TC-53311-1S‐‐Encapsulated, 115° C Rise, 180°C Insulation .. datasheet abstract.. |
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First line: Abstract: .. 2819 4406 50 D748N K0,12F 6 1 0. 3700 4952 120 D1029N K0,08F 3 2 0. 5765 7195 120 D2209N K0,08F 3 2 0. 6241 7999 120 D2659N K0,08F 3 2 0. 7182 9701 120 D2209N K0,05F 6 1 0. 7949 11194 120 D2659N K0,05F 6 1 0. 12312 13043 .. datasheet abstract.. |
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First line: LIGHTEN PARALLEL FIBER OPTIC DATA LINK Executive Summary Gore Associates Inc. completing Abstract: .. Fax 302-737-2819 Fax +44 1382 561007. Visit our website on www.gore.com. nLIGHTEN Receiver Parallel Fiber Optic Transmitter Eye Pattern. bandwidth constrictions in the data path, Duty Cycle Distortion .. datasheet abstract.. |
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First line: FDS4070N7 FDS4070N7 N-Channel PowerTrench MOSFET General Description This N-Channel MOSFET been designed Abstract: .. Dynamic Characteristics Ciss Input Capacitance 2819 pF. Coss Output Capacitance 600 pF. Crss Reverse Transfer Capacitance. VDS = 20 V, V GS = 0 V, f = 1.0 MHz. 291 pF. Switching Characteristics Note .. datasheet abstract.. |
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First line: FDS4070N3 FDS4070N3 N-Channel PowerTrench MOSFET General Description This N-Channel MOSFET been designed Abstract: .. Dynamic Characteristics Ciss Input Capacitance 2819 pF. Coss Output Capacitance 600 pF. Crss Reverse Transfer Capacitance. VDS = 20 V, V GS = 0 V, f = 1.0 MHz. 291 pF. Switching Characteristics Note .. datasheet abstract.. |
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First line: Cypress Semiconductor Metal Qualification Report VERSION February SRAM R42HD Technology Qualification CY7C1031 / CY7C1032 Abstract: .. 2819 0 N/A N/A 0 PPM. High Temperature Operating Life2,3 Long Term Failure Rate. 791,500 DHRs 0 0.7 170 7 FIT. 1 A production burn-in of 48 Hrs at 135°C, 6.5V is required for the product. 2 Assuming an ambient .. datasheet abstract.. |
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First line: TECHNICAL TEMPERATURE HUMIDITY MODULE DATA Based rugged HS1101 humidity sensor dedicated humidity Abstract: .. 59 2819 193. 60 2720 189. 61 2629 185. 62 2542 182. 63 2458 178. 64 2378 175. 65 2304 171. 66 2229 168. 67 2158 .. datasheet abstract.. |
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First line: Floating Point Arithmetic Unit OVERVIEW DFPAU uses specialized algorithms compute arithmetic functions. Abstract: .. ORCA 4 -3 2819/385 30 MHz. ispXPGA -4 2730/747 39 MHz. Core performance in LATTICE® devices. DFPAU floating point instructions perform-ance has been compared to standard C li-brary functions delivered .. datasheet abstract.. |
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First line: FDS4070N7 April FDS4070N7 N-Channel PowerTrench MOSFET General Description This N-Channel MOSFET been Abstract: .. Dynamic Characteristics Ciss Input Capacitance 2819 pF. Coss Output Capacitance 600 pF. Crss Reverse Transfer Capacitance. VDS = 20 V, V GS = 0 V, f = 1.0 MHz. 291 pF. Switching Characteristics Note .. datasheet abstract.. |
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First line: Generation Wafer Level Packaged HEXFET Devices Sammon Hazel Schofield Aram Arzumanyan Kinzer Abstract: .. Profile Worst Combination Best Combination -40/125°C 1736 2819. -55/150°C 1538 2417. Wafer. Passivation. Electroless Nickel Immersion Gold. Top Metal. from the UBM occurs leaving micro voids. .. datasheet abstract.. |
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First line: FlipFET MOSFET Design High Volume Assembly Hazel Schofield Sammon Aram Arzumanyan Kinzer. Abstract: .. -40/125°C 1736 2819. -55/150°C 1538 2417. Table 1: FEA Modelled Weibul Life for a 1.524x1.524mm The FlipFET TM MOSFET. Of the factors studied, only die standoff and passivation opening were found .. datasheet abstract.. |
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First line: Optical Transport Datasheet LambdaDriver 10 Gbps Transponder with TM-6DXFPF Forward Error Correction distance extension Abstract: .. For 10GE traffi c, performance parameters as defi ned by the RFC 2819 RMON , MIB2 and IfMib extensions are supported. In addition, the extensive information provided by the G.709 monitoring .. datasheet abstract.. |
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First line: March FDS4770 FDS4770 N-Channel PowerTrench MOSFET General Description This N-Channel MOSFET been Abstract: .. Dynamic Characteristics Ciss Input Capacitance 2819 pF. Coss Output Capacitance 600 pF. Crss Reverse Transfer Capacitance. VDS = 20 V, V GS = 0 V, f = 1.0 MHz. 291 pF. Switching Characteristics Note .. datasheet abstract.. |
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First line: TECHNICAL TEMPERATURE HUMIDITY MODULE DATA Based rugged HTS2010SMD humidity sensor dedicated humidity Abstract: .. 59 2819 193. 60 2720 189. 61 2629 185. 62 2542 182. 63 2458 178. 64 2378 175. 65 2304 171. 66 2229 168. 67 2158 .. datasheet abstract.. |
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First line: HTS2030SMD Temperature Relative Humidity Sensor DESCRIPTION Based unique capacitive cell humidity measurement Abstract: .. 59 2819 193. 60 2720 189. 61 2629 185. Temperature Resistance Max. °C ohm Deviation. 62 2542 182. 63 .. datasheet abstract.. |
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First line: TECHNICAL DATA RELATIVE HUMIDITY TEMPERATURE MODULE HTM1505 Based rugged HS1101 humidity sensor Abstract: .. 59 2819 193. 60 2720 189. 61 2629 185. 62 2542 182. 63 2458 178. 64 2378 175. 65 2304 171. 66 2229 168. 67 2158 .. datasheet abstract.. |
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First line: FDS4770 FDS4770 N-Channel PowerTrench MOSFET General Description This N-Channel MOSFET been designed Abstract: .. Dynamic Characteristics Ciss Input Capacitance 2819 pF. Coss Output Capacitance 600 pF. Crss Reverse Transfer Capacitance. VDS = 20 V, V GS = 0 V, f = 1.0 MHz. 291 pF. Switching Characteristics Note .. datasheet abstract.. |
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First line: FDS4070N3 February FDS4070N3 N-Channel PowerTrench MOSFET General Description This N-Channel MOSFET been Abstract: .. Dynamic Characteristics Ciss Input Capacitance 2819 pF. Coss Output Capacitance 600 pF. Crss Reverse Transfer Capacitance. VDS = 20 V, V GS = 0 V, f = 1.0 MHz. 291 pF. Switching Characteristics Note .. datasheet abstract.. |
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First line: TECHNICAL TEMPERATURE HUMIDITY MODULE DATA Based rugged HS1101 humidity sensor dedicated humidity Abstract: .. 59 2819 193. 60 2720 189. 61 2629 185. 62 2542 182. 63 2458 178. 64 2378 175. 65 2304 171. 66 2229 168. 67 2158 .. datasheet abstract.. |
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First line: TECHNICAL DATA TEMPERATURE RELATIVE HUMIDITY SENSOR HTS2030SMD Meets RoHS regulations Based unique Abstract: .. -11 51813 4225 24 10404 325 59 2819 193 94 955 96. -10 49204 3932 25 10000 300 60 2720 189 95 927 94. -9 46767 3662 26 9600 300 61 2629 185 96 901 92. -8 44467 3411 27 9218 300 62 2542 182 97 877 90. -7 42296 3177 28 .. datasheet abstract.. |
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First line: 12-340 LEAD proven generation high-performance space-saving batteries switchgear control FEATURES BENEFITS More Abstract: .. 2 XT1L-33 1632 1568 1506 1121 1642 2135 2819 2.180 3.365 4.449 6.126. 2 XT1L-35 1734 1666 1617 1204 1764 2293 3028 2.341 3.614 4.778 6.578. 2 XT1L-37 1836 1764 1713 1275 1867 2428 3206 2.479 3.826 5.059 .. datasheet abstract.. |
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