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ISL28166FHZ-T7 Intersil Corporation 39µA Micropower Single and Dual Rail-to-Rail Input-Output Low Input Bias Current (RRIO) Op Amps; SOT6; Temp Range: -40° to 125°C
ISL28168FHZ-T7A Intersil Corporation OP-AMP, 1800uV OFFSET-MAX, 0.2MHz BAND WIDTH, PDSO6, ROHS COMPLIANT, SOT-23, 6 PIN
ISL28168FHZ-T7 Intersil Corporation OP-AMP, 1800uV OFFSET-MAX, 0.2MHz BAND WIDTH, PDSO6, ROHS COMPLIANT, SOT-23, 6 PIN
TW2816-TA1-GR Intersil Corporation 4 Channel Video Decoders For Security Applications; TQFP100; Temp Range: 0° to 70°
TPS2816Y Texas Instruments 2A BUF OR INV BASED MOSFET DRIVER, UUC5, DIE-5
TPS2816DBV Texas Instruments Inverting High Speed MOSFET Driver with Active Pullup and Internal Regulator 5-SOT-23

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Part : 924217-28-16-EU Supplier : 3M Interconnect Solutions Manufacturer : Avnet Stock : - Best Price : $2.2053 Price Each : $2.4542
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Part : IS62WV12816EBLL-45TLI Supplier : Integrated Silicon Solution Manufacturer : Avnet Stock : 1,755 Best Price : €1.0680 Price Each : €1.6020
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Part : 2SC2816-E Supplier : Renesas Electronics Manufacturer : Rochester Electronics Stock : 199 Best Price : $2.81 Price Each : $3.46
Part : IS62WV12816EBLL-45BLI Supplier : Integrated Silicon Solution Manufacturer : Chip1Stop Stock : 479 Best Price : $0.9695 Price Each : $1.13
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2816 eeprom

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: bytewide 24-pin DIP standard. The devices also match the pinout of the 2716 EPROM and the 2816 EEPROM , DS 1220AB/AD DALLAS s e m ic o n d u c to r DS1220AB/AD ^ Nonvolatile SRAM FEATURES · 10 years minimum data retention in the absence of external power · Data is automatically protected during power loss · Directly replaces 2K x 8 volatile static RAM or EEPROM · Unlimited write cycles · Low-power CMOS · JEDEC standard 24-pin DIP package · Read and write access times as fast as 100 ns · Lithium -
OCR Scan
IC 2816 eeprom 2816 2716 2k eprom 24 pin 2816 eprom eeprom 2716 eprom 2816 DS1220AD DS1220AB 24-PIN A0-A10
Abstract: bytewide 24-pin DIP standard. The DS1220Y also matches the pinout of the 2716 EPROM or the 2816 EEPROM , DS1220Y DALLAS SEMICONDUCTOR FEATURES · 10 years minimum data retention in the absence of externa! power · Data is automatically protected during power loss · Directly replaces 2K x 8 volatile static RAM or EEPROM · Unlimited write cycles · Low-power CMOS · JEDEC standard 24-pin DIP package · Read and write access times as fast as 100 ns · Full 2:10% operating range · Optional industrial -
OCR Scan
2716 eprom RAM 2816 2716 2k eprom retention DS1220Y dallas 2716 eeprom sram 2k x 8
Abstract: byte-wide pinout standards â  Functionally equivalent to Intel 2816 EEPROM â  Similar pinout to 2716 , compatible with the ER5816 and the Intel 2816 EEPROM. Some differences of pin functions and control logic , - Y DECODER â'"A CE WE OE LU 2Kx8 EEPROM MATRIX CONTROL LOGIC AND VOLTAGE GENERATOR -
OCR Scan
ER5916 ER5916IR ER5916HR intel 2816 eeprom CI EEPROM 2816 intel 2816 2kx8 2716 te2025 INTEL D 2816 ERS91I6HR
Abstract: family standards. It is functionally and pin for pin compatible with the Intel 2816 EEPROM and also pin , capability â  Conforms to JEDEC byte-wide pinout standards â  Pin for pin compatible with Intel 2816 EEPROM â  Similar pinout to 2716 EPROM DESCRIPTION The ER5816 is a high speed electrically word or , EEPROM may be programmed under user control from a simple input device as is the case in radio and , after 105 cycles. BLOCK DIAGRAM X DECODER K J V 2k x 8 EEPROM MATRIX A3 . A0- CE Vpp OE _LLL -
OCR Scan
ER5816IR ER5816HR B 2716 D EEPROM intel Eprom B 2716 D intel 2716 eprom eprom 2716
Abstract: family standards. It is functionally and pin for pin compatible with the Intel 2816 EEPROM and also pin , capability â  Conforms to JEDEC byte-wide pinout standards â  Pin for pin compatible with Intel 2816 EEPROM â  Similar pinout to 2716 EPROM DESCRIPTION The ER5816 is a high speed electrically word or , EEPROM may be programmed under user control from a simple input device as is the case in radio and , after 105 cycles. BLOCK DIAGRAM X DECODER K J V 2k x 8 EEPROM MATRIX A3 . A0- CE Vpp OE _LLL -
OCR Scan
2k eeprom 2816 intel 2816 eprom 2716 EPROM 24 PINS pd 2816 ER58I6IR
Abstract: 0V VPP 5V 2N3906 10k 50 THERMALLY COUPLE 12V 20k 21V 21V 2816 EEPROM Supply Semelab
Original
IP117AIG IP117IG IP117AHV IP317A LM301A 2N3904
Abstract: matches the pinout of the 2716 EPROM or the 2816 EEPROM, allowing direct substitution while enhancing , DS1220Y s e m ic o n d u c to r DALLAS DS1220Y 16K Nonvolatile SRAM FEATURES · Data retention in the absence of V cc PIN ASSIGNMENT A7 1 | | s 1 4 Ul 2 24 1 VCC A8 A9 WE ÔË A10 CË DQ7 DQ6 DQ5 DQ4 DQ3 · Data is automatically protected during power loss A6 23 1 22 21 1 1 · Directly replaces 2K x 8 volatile static RAM or EEPROM · Unlimited write cycles A5 A4 A3 · Low-power -
OCR Scan
720MIL
Abstract: matches the pinout of the 2716 EPROM or the 2816 EEPROM, allowing direct substitution while enhancing , Not Recommended for New Design DS1220Y 16k Nonvolatile SRAM www.maxim-ic.com FEATURES § § § § § § § § § PIN ASSIGNMENT 10 years minimum data retention in the absence of external power Data is automatically protected during power loss Directly replaces 2k x 8 volatile static RAM or EEPROM Unlimited write cycles Low-power CMOS JEDEC standard 24-pin DIP package Read and write Dallas Semiconductor
Original
DS1220Y-120 DS1220Y-100 DS1220Y-150 DS1220Y-200 E99151 720-MIL
Abstract: match the pinout of the 2716 EPROM and the 2816 EEPROM, allowing direct substitution while enhancing , DS1220AB/AD 16k Nonvolatile SRAM FEATURES PIN ASSIGNMENT 10 years minimum data retention in the absence of external power Data is automatically protected during power loss Directly replaces 2k x 8 volatile static RAM or EEPROM Unlimited write cycles Low-power CMOS JEDEC standard 24-pin DIP package Read and write access times as fast as 100 ns Lithium energy source is electrically Maxim Integrated Products
Original
DS1220AB-120 DS1220AB-150 DS1220AD-100 DS1220AD-120 DS1220AB-100 EEPROM 2816 CMOS DS1220ad- DS1220AB-200 DS1220AB-200IND DS1220AD-100IND
Abstract: 24-pin DIP standard. The DS1220AB/AD also matches the pinout of the 2716 EPROM or the 2816 EEPROM , EEPROM â'¢ Unlimited write cycles â'¢ Low-power CMOS â'¢ Over 10 years of data retention â'¢ Standard , replaces 2K x 8 volatile static RAM or EEPROM â'¢ UnKmited write cycles â'¢ Low-power CMOS â'¢ Over 10 , popular bytewide 24-pin DIP standard. The DS1220Y also matches the pinout of the 2716 EPROM or the 2816 EEPROM, allowing direct substitution while enhancing performance. There is no limit on the number of -
OCR Scan
dallas date code DS1220AD d6122 010TNA T-46-23-37
Abstract: SERIES SERIES SERIES SERIES APPLICATIONS INFORMATION 5V Regulator with Shut Down 2816 EEPROM -
OCR Scan
LM338 IP138A IP138 IP338A IP338 LM138
Abstract: 21V 12V 21V 2816 EEPROM Supply Programmer for Read / Write Control 50k Temperature Semelab
Original
IP117G IP117AG IP117HVG IP117AHVG LM117G LM117AG LM117AHVG LM117 LE17
Abstract: THERMALLY COUPLE 12V 20k 5V 21V 12V 21V 2816 EEPROM Supply Programmer for Read / Write Semelab
Original
IP117R IP117AR IP117HVR IP117AHVR LM117R LM117AR LM117HVR LM117AHVR
Abstract: 21V 12V 21V 2816 EEPROM Supply Programmer for Read / Write Control 50k Temperature Semelab
Original
IP117SMD05 IP117ASMD05 IP117HVSMD05 LM117SMD05 LM117ASMD05 LM117HVSMD05 IP117 IP117AHVSMD05/
Abstract: 2816 EEPROM Supply Programmer for Read/Write Control Part Number IP117 IP117HV IP117A IP117AHV LM117 -
OCR Scan
IP317 LM117HV IP317HV IP317AHV IP117AHVK IP117SG
Abstract: Load Transient Response f VOUT 10V PRELOAD WT T 2b C I 2816 EEPROM Supply Programmer for Read/Write -
OCR Scan
IP350K IP350T IP350AV S3-5V seagate V025V IP150 IP150A IP350A IP350 T0220 IP15QA
Abstract: 21V 12V 21V 2816 EEPROM Supply Programmer for Read / Write Control 50k Temperature Semelab
Original
IP117HVIG IP117AHVIG LM117IG LM117AIG LM117HVIG LM117AHVIG
Abstract: bytewide 24-pin DIP standard. The DS1220Y also matches the pinout of the 2716 EPROM or the 2816 EEPROM , NOT RECOMMENDED FOR NEW DESIGNS DS1220Y 16k Nonvolatile SRAM FEATURES PIN ASSIGNMENT 10 years minimum data retention in the absence of external power Data is automatically protected during power loss Directly replaces 2k x 8 volatile static RAM or EEPROM Unlimited write cycles Low-power CMOS JEDEC standard 24-pin DIP package Read and write access times as fast as 100 ns Full ±10% Maxim Integrated Products
Original
DS1220Y-100IND DS1220Y-200IND
Abstract: -pln DIP standard. The DS1220AB also matches the pinout of the 2716 EPROM or the 2816 EEPROM, allowing , DALLAS SEMICONDUCTOR CORP 3HE D 21,14130 D00337Q M â  DAL DS1220AB/AD DALLAS SEMICONDUCTOR DS1220AB/AD 16K Nonvolatile SRAM FEATURES â'¢ Data retention In the absence of Vc0 â'¢ Data Is automatically protected during power loss â'¢ Directly replaces 2K x 8 volatile static RAM or EEPROM â'¢ Unlimited write cycles â'¢ Low-power CMOS â'¢ Over 10 years of data retention â'¢ Standard 28-pln JEDEC -
OCR Scan
VA10 DS1220 DS1210
Abstract: THERMALLY COUPLE 12V 20k â"¦ 5V 21V 12V 21V 2816 EEPROM Supply Programmer for Read / Write Semelab
Original
LM117HVG 1N4001
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