Datasheet Search Results			1 - 1 of about 1 for 2800A
	2800A	Bel Fuse, Inc.	ISDN MAGNETICS Dual S Interface Transformers	42.01 Kb,  2 Pages.

Fulltext Datasheet Results		1 - 50 of about 86 for 2800A
	First line: Abstract: .. Rückstromspitze IF = 400A 400A , - diF/dt = 2800A/μsec. peak reverse recovery current VR = 900V 900V , , Tvj = 25 �C IRM - 240 - A. VR = 900V 900V , Tvj = 125 �C - 340 - A. Sperrverzögerungsladung IF = 400A 400A , - diF/dt = 2800A/μsec ..  Tags: igbt module   datasheet abstract..	52.54 Kb	5 Pages	Original
	First line: 1401-1407 GCT mitsubishi 6KV/5KA REVERSE CONDUCTING Yamaguchi*, Oota**, Kurachi*, Tokunoh**, Yamaguchi**, Iwamoto**, Donlon***, Motto*** *Fukuryo Semicon Engineering Corporation, Fukuoka, Japan Power Device Division, Mitsubishi Electric Corporation, Fukuoka, Japan Powerex Incorporation, Youngwood, P Abstract: .. shows a typical snubberless turn-off of the integrated diode at load current IT = 2800A, dIT/dt = 500 A/μs, bus voltage VD = 3000V 3000V , and TJ = 125 �C. Figures 6 and 7 show typical Eoff and Erec losses as ..  Tags: GCT mitsubishi 1401-1407 upfc mitsubishi inverter air conditioning Thyristor 6kV   datasheet abstract..	552.63 Kb	7 Pages	Original
	First line: 45800 A 68064 72^21 DDDbS3D TC20 2800A Powerex, Inc., Hillis Street, Youngwood, Pennsylvania 15697-1800 (412) 925-7272 PtlBSe COtltrOl Powerex, Europe, S.A. Avenue Durand, BP107, 72003 Mans, France (43) 41.14.14 ggQQ Amperes Average POUEREX 4500 Volts cathode potential terminal inch 4.75 push-on typ Abstract: .. 72^21 DDDbS3D TTß  �PRX TC20 TC20 2800A Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 PtlBSe COtltrOl SCR Powerex, Europe, S.A. 428 Avenue G. Durand, BP107 BP107 ..  Tags: A 68064 45800 prx scr   datasheet abstract..	192.56 Kb	4 Pages	OCR Scan
	First line: SIDC14D60C6 SIDC14D60C6 FETURES: 600V EMCON technology chip soft, fast switching reverse recovery charge small temperature coefficient Abstract: .. IF =50A di/dt=2800A/μs. VR =300V 300V VGE = - 1 5 V. Tj = 25 �C. Tj = 125 �C. Tj = 150 �C. 69.0. 76.0. 80.0. A. Recovered charge. Qr. IF =50A di/dt=2800A/μs. VR =300V 300V VGE = - 1 5 V. Tj = 25 �C. Tj = 125 �C. Tj = 150 �C. 1.90. 3.40. 3.95. μC. Reverse ..  Tags: SIDC14D60C6 FS50R06KE3*   SIDC14D60C6	55.41 Kb	4 Pages	Original
	First line: HEC-B3 1+15V 2-15V 3Vout HEC600-B3 600A HEC800-B3 800A HEC1000-B3 1000A 4V5V ±20mV ±10mV 0.05%/ di/dt=50A/µS ±12V±15V 18mA 50Hz HEC1200-B3 1200A HEC1500-B3 1500A HEC2000-B3 2000A 2800A HEC2500-B3 2500A UL94-V0 Abstract: .. 线性范围1.5倍额定电流2800A 输出电压4V、5V 输出精度 �1% 失调电压 �20mV 20mV 磁滞误差 �10mV 10mV 温度漂移0.05%/ �C 反应时间<10μS di/dt=50A/μS 供电电源 �12V ..  Tags:   HEC600-B3 HEC800-B3 HEC1000-B3 HEC1200-B3 HEC1500-B3 HEC2000-B3 HEC2500-B3	75.02 Kb	1 Pages	Original
	First line: Factory: Ungaretti 16157 Genova, Italy Phone: +39-010-667 8800 Fax: +39-010-667 8812 Web: www.gpsemi.it E-mail: info@gpsemi.it Abstract: .. DC OUTPUT CURRENT 2800A. GOB94028 GOB94028 GOB95028 GOB95028 . Line to line voltage. Characteristic Conditions. IDC DC output current 2800 A 2800 A. VINS rms Insulation voltage 3000 V 3000 V. THYRISTOR TRIGGERING CHARACTERISTICS ..  Tags: micro fuse  220v ac fan  2068132.800   datasheet abstract..	545.64 Kb	3 Pages	Original
	First line: PARAMETERS VALUES UNITS RATED VOLTAGE OPERATING VOLTAGE RANGE RATED CURRENT (MAX) MINIMUM RESONANT FREQUENCY TONE PULSE RATE CONTINUOUS OPERATING TEMPERATURE STORAGE TEMPERATURE Abstract: .. 4 ~ 28 Vdc RATED CURRENT MAX 8 mA MINIMUM SPL @ 10 CM 97 dBA RESONANT FREQUENCY 2800 �500 Hz TONE OR PULSE RATE CONTINUOUS - OPERATING TEMPERATURE -20 ~ +60 †�c STORAGE TEMPERATURE -30 ~ +70 †�c ..  Tags:   datasheet abstract..	71.79 Kb	1 Pages	OCR Scan
	First line: t329 Dual Interface Transformers profile 0.175" package Compatible with card applications TM9938 Abstract: .. 2800A 2800B 2800B 2800C 2800C 2800D 2800D 2800E 2800E . CORPORATE. Bel Fuse Inc. 198 Van Vorst Street Jersey City, NJ 07302 Tel 201-432-0463 Fax 201-432-9542 www.belfuse.com. FAR EAST. Bel Fuse Ltd. 8F / 8 Luk Hop Street San ..  Tags: t329  t328   TM9938	42.01 Kb	2 Pages	Original
	First line: FGC6000AX-120DS HIGH POWER INVERTER PRESS PACK TYPE FGC6000AX-120DS Abstract: .. IT = 2800A, VD =3000V 3000V , di/dt = 1000A 1000A /μs, IGM = 300A 300A , diG/dt = 200A 200A /μs, Tj = 125 �C see Fig. 1,2 IT = 6000A 6000A , VD =3000V 3000V , diGQ/dt = 10000A 10000A /μs, Tj = 125 �C, LC = 0.3μH, VRG = 20V see Fig. 1,2 IT = 2800A ..  Tags:   FGC6000AX-120DS	49.42 Kb	3 Pages	Original
	First line: Abstract: .. Rückstromspitze IF = 400A 400A , - diF/dt =2800A/μsec peak reverse recovery current VR = 900V 900V , VGE = -10V -10V , Tvj = 25 �C IRM - 240 - A VR = 900V 900V , VGE = -10V -10V , Tvj = 125 �C - 340 - A Sperrverzögerungsladung ..  Tags:   datasheet abstract..	93.32 Kb	8 Pages	Original
	First line: Abstract: .. Rückstromspitze IF = 400A 400A , - diF/dt =2800A/μsec peak reverse recovery current VR = 900V 900V , VGE = -10V -10V , Tvj = 25 �C IRM - 240 - A VR = 900V 900V , VGE = -10V -10V , Tvj = 125 �C - 340 - A Sperrverzögerungsladung ..  Tags:   datasheet abstract..	93.5 Kb	8 Pages	Original
	First line: light sensor OPTO TECHNOLOGY OflE OPTO TECHNOLOGY TYPE PHOTO SENSOR DESCRPTON Matched sensitivity percent attained with Optec's 150/01 Photo Sensors. Each sensor consists photodiode with level amplifier, Schmitt trigger, voltage regulator open collector driver output hermetic package. output transis Abstract: .. .115 mw/cm2 mw/cm2 Hysteresis — 12 % 1 Based on Irradiance From A Tungsten Source At 2800 �K Color Temperature 2 Light Levels Greater Than Hh Produce A High-Level Output Operating Temperature ..  Tags: light sensor   datasheet abstract..	145.29 Kb	1 Pages	OCR Scan
	First line: HEC-C3 1+15V 2-15V 3Vout 148V HEC300-C3 300A HEC500-C3 500A HEC800-C3 800A 4V5V ±20mV ±10mV 0.05%/ di/dt=50A/µS ±12V±15V DC-DC 25mA 50Hz HEC1000-C3 1000A HEC1500-C3 1500A HEC2000-C3 2000A 2300A HEC2500-C3 2500A 2800A UL94-V0 Abstract: .. 线性范围1.5倍额定电流2300A 2300A 2800A 输出电压4V、5V 可选电流输出 输出精度 �1% 失调电压 �20mV 20mV 磁滞误差 �10mV 10mV 温度漂移0.05%/ �C 反应时间<10μS di/dt= ..  Tags:   HEC300-C3 HEC500-C3 HEC800-C3 HEC1000-C3 HEC1500-C3 HEC2000-C3 HEC2500-C3	59.57 Kb	1 Pages	Original
	First line: 2801A Hept Darlington Transistor Array ULN2001A-/2801A ULN2000A ->>}-X ULN2800A Device Type Number Designation VcE(MAX)= 500mA 600mA 500mA 500mA 600mA 500mA Type. Number Type Number General Purpose PMOS, CMOS ULN-2001A ULN-2011A ULN-2021A ULN-2801A ULN-2811A ULN-2821A 14-25V PMOS ULN-2002A ULN Abstract: .. total 2800A;'-. -7: ULN2800A ,., 1 _;; J.. Device Type Number Designation 50V 500mA 500mA 50V ..  Tags: 2801A 2022A 2815A* 2801A* 2824A*   datasheet abstract..	46.21 Kb	1 Pages	OCR Scan
	First line: thyristor cdi MITSUBISHI SOFT RECOVERY DIODE FD3000AU-120DA HIGH POWER, HIGH FREQUENCY PRESS PACK TYPE FD3000AU-120DA Abstract: .. IFM = 6300A 6300A , Tj = 125 �C VRM = 6000V 6000V , Tj = 125 �C IFM = 2800A, di/dt = 500A 500A /μs, VR = 3000V 3000V CC = 6μF, L C = 0.3μH, Tj = 125 �C See Fig. 1, 2 Junction to Fin. — — — — — — — — — — 4.5 300 9500 22 0.004. Fig. 1: Reverse recovery ..  Tags: thyristor cdi   FD3000AU-120DA	36.33 Kb	3 Pages	Original
	First line: WESTCODE Date:- Dec, 2010 Data Sheet Issue:- Abstract: .. IC =1600A 1600A , VCE =2800V 2800V , di/dt=2800A/μs VGE = �15V, Ls=140nH 140nH Rg ON = 5.1Ω, Rg OFF =4.2Ω, CGE=133nF 133nF Integral diode used as freewheel diode. Note 3 & 4 J. ISC Short circuit current - 6350 -. VGE=+15V ..  Tags:   datasheet abstract..	222 Kb	6 Pages	Original
	First line: static var compensator Mitsubishi Thyristor FT1500AU-240 Ultra High Voltage Thyristor Abstract: .. ITM = 2800A di/dt = -10A -10A /μs VR = 100V 100V VD = 6000V 6000V dv/dt = 3V/μs. ITM = 2800A di/dt = -10A -10A /μs VR = 100V 100V VD = 6000V 6000V Tj = 80ΥC. di/dt. dv/dt. VD. ITM. VR. t 0. ‐ + tq V AK. , iA. 0. 2000. 6000. 4000. 10000. 8000. REVERSE RECOVERED CHARGE ..  Tags: static var compensator thyristor Vtm 6.5  THYRISTOR di/dt 100A/uS   FT1500AU-240	79.46 Kb	4 Pages	Original
	First line: SL3500LX21 ALLOY-FREE LIGHT TRIGGER THYRISTOR SL3500LX21 Vrrm =8000V HIGH POWER CONTROL APPLICATIONS Repetitive Peak Off-State Voltage Abstract: .. = Rated, Tj = 120 �C — — 700 mA Peak On-State Voltage VTM ITM — 2800A, Tj = 25 �C — — 2.7 V Light Trigger Power Plt VD = 12V, RL = 60 Tj = — 40 �C — — — mW Tj = 25 �C — — 8 Delay Time td VD ..  Tags:   datasheet abstract..	127.61 Kb	2 Pages	OCR Scan
	First line: ULN2000 RELIABILITY REPORT RELIABILITY SERIES VLN2000A VLN2800A DARLINGTON DRIVERS This report summarizes accelerated-life tests that have been performed Series ULN2000/2800A integrated circuits provides information that used calculate failure rate junction operating temperature. Product-reliability Abstract: .. tests that have been performed on Series ULN2000 ULN2000 /2800A integrated circuits and provides information that can be used to calculate the failure rate at any junction operating temperature. Product ..  Tags: ULN2000   datasheet abstract..	192.08 Kb	5 Pages	OCR Scan
	First line: MITSUBISHI GCT(Gate Commutated Turn-off) THYRISTOR UNIT GCU60AA-120 HIGH POWER INVERTER PRESS PACK TYPE Abstract: .. Eon Turn-on switching energy IT=2800A, VD=3000V 3000V , di/dt=1000A 1000A /μs Tj=125deg 125deg See Fig.1,2 1.5 J/P ts Storage time IT=6000A 6000A , VDM=5500V 5500V , VD=3000V 3000V Tj=125deg 125deg , Cc=6μF, Lc=0.4μH See ..  Tags: thyristor cdi  GCT mitsubishi   GCU60AA-120	191.08 Kb	10 Pages	Original
	First line: MITSUBISHI GENERAL THYRISTORS FT1500AU-240 HIGH VOLTAGE, HIGH POWER, GENERAL DYNAMIC GATE, PRESS PACK TYPE FT1500AU-240 Abstract: .. ITM = 2800A di/dt = ‐10A/μs VR = 100V 100V VD = 6000V 6000V dv/dt = 3V/μs 0 500 1000 1500 2000 2500 3000 ‐60 ‐20 20 60 100 140 IH IL t 0 iG , i A IL tgw IG VARIABLE RESISTANCE METHOD IL condition : ..  Tags:   FT1500AU-240	47.83 Kb	4 Pages	Original
	First line: APTGT200TL60G Three level inverter Trench Field Stop IGBT Power Module VBUS VCES 600V 200A 80°C Abstract: .. C 15.2 μC Tj = 25 �C 1.7 Err Reverse Recovery Energy IF = 150A 150A VR = 300V 300V di/dt =2800A/μs Tj = 150 �C 3.6 mJ RthJC Junction to Case Thermal Resistance 0.52 �C/W CR5 & CR6 diode ratings and characteristics ..  Tags:   APTGT200TL60G	216.17 Kb	7 Pages	Original
	First line: SILICON EPITAXIAL JUNCTION N-CHANNEL FIELD EFFECT TRANSISTOR GEOMETRY 446. HIGH SENSITIVITY DARK CURRENT FAST RESPONSE FLAT GLASS EXTERNAL OPTICS Abstract: .. 5V, VDS = 25 - 0.05 1.0 nA ON Resistance Rds VDS = 0.1V, VGS = 0 - 50 100 Ohms 1 Tungsten Lamp 2800Â � k Color Temp. 2 GaAs Diode Source. 3 Directly Proportional to Rg. 4 Pulse Measurement 1% Duty Cycle, 10MS 10MS ..  Tags:   datasheet abstract..	75.48 Kb	1 Pages	OCR Scan
	First line: SILICON EPITAXIAL JUNCTION N-CHANNEL FIELD EFFECT TRANSISTOR GEOMETRY 446, HIGH SENSITIVITY DARK CURRENT FAST RESPONSE ELECTRICAL DATA ABSOLUTE MAXIMUM RATING Drain Source Voltage BVdso Volts Abstract: .. , Vds = 25 - 0.05 1.0 nA ON Resistance Rds Vds = 0.1V, Vgs = 0 - 50 100 Ohms ^Tungsten Lamp 2800Â � k Color Temp. -Â �Pulse Measurement 1% Duty Cycle, 10MS 10MS Max. GaAs Diode Source. 5Gate Current per unit Radient ..  Tags:   datasheet abstract..	78.82 Kb	1 Pages	OCR Scan
	First line: FOTOFETTM SILICON EPITAXIAL JUNCTION N-CHANNEL FIELD EFFECT TRANSISTOR GEOMETRY 282, HIGH SENSITIVITY DARK CURRENT FAST RESPONSE PHOTOTUBE REPLACEMENT ELECTRICAL DATA ABSOLUTE MAXIMUM RATINGS Drain Source Voltage BVbso Volts Abstract: .. , Vds = 0 — 0.05 1.0 nA On Resistance Rds Vds = 0.1V, Vgs = 0 - 1 K - Ohms 1 Tungsten Lamp 2800 � K Color Temp. 2 GaAs Diode Source 1 Directly Proportional to Rg 4Gate Current per unit Radiant Power Density ..  Tags:   datasheet abstract..	75.32 Kb	1 Pages	OCR Scan
	First line: FOTO SILICON EPITAXIAL JUNCTION N-CHANNEL FIELD EFFECT TRANSISTOR GEOMETRY 400, ULTRA HIGH SENSITIVITY DARK CURRENT FAST RESPONSE PHOTOTUBE REPLACEMENT FLAT GLASS EXTERNAL OPTICS ELECTRICAL DATA ABSOLUTE MAXIMUM RATINGS Abstract: .. 10V, Vds = 0 - 1.0 3.0 nA On Resistance Rds Vds = 0.1V, Vgs = 0 - 100 - Ohms 1 Tungsten Lamp 2800Â � K Color Temp. 2 GaAs Diode Source 3 Directly Proportional to Rg 4Gate Current per unit Radient Power Density ..  Tags:   datasheet abstract..	73.02 Kb	1 Pages	OCR Scan
	First line: FOTO SILICON EPITAXIAL JUNCTION N-CHANNEL FIELD EFFECT TRANSISTOR GEOMETRY 400, ULTRA HIGH SENSITIVITY DARK CURRENT FAST RESPONSE PHOTOTUBE REPLACEMENT ELECTRICAL DATA ABSOLUTE MAXIMUM RATINGS Drain Source Voltage BVbso Volts Abstract: .. = 0 - 1.0 3.0 nA On Resistance Rds Vds = ,1V, Vgs = 0 - 100 - Ohms 1 Tungsten Lamp 2800Â � K Color Temp. 2GaAs Diode Source 'Directly Proportional to Rg "Gate Current per unit Radient Power Density at Lens ..  Tags:   datasheet abstract..	77.13 Kb	1 Pages	OCR Scan
	First line: 2801A Hept Darlington Transistor Array ULN2001A-/2801A ULN2000A ->>}-X ULN2800A Device Type Number Designation VcE(MAX)= 500mA 600mA 500mA 500mA 600mA 500mA Type. Number Type Number General Purpose PMOS, CMOS ULN-2001A ULN-2011A ULN-2021A ULN-2801A ULN-2811A ULN-2821A 14-25V PMOS ULN-2002A ULN Abstract: .. total 2800A;'-. -7: ULN2800A ,., 1 _;; J.. Device Type Number Designation 50V 500mA 500mA 50V ..  Tags: 2801A 2801A* ULN2800A* 2022A 2805A   datasheet abstract..	77.26 Kb	2 Pages	OCR Scan
	First line: 2801A Hept Darlington Transistor Array ULN2001A-/2801A ULN2000A ->>}-X ULN2800A Device Type Number Designation VcE(MAX)= 500mA 600mA 500mA 500mA 600mA 500mA Type. Number Type Number General Purpose PMOS, CMOS ULN-2001A ULN-2011A ULN-2021A ULN-2801A ULN-2811A ULN-2821A 14-25V PMOS ULN-2002A ULN Abstract: .. total 2800A;'-. -7: ULN2800A ,., 1 _;; J.. Device Type Number Designation 50V 500mA 500mA 50V ..  Tags: 2801A 2801A* 2822A   datasheet abstract..	56.08 Kb	2 Pages	OCR Scan
	First line: DIM500BSS06-S000 DIM500BSS06-S000 DS5677-1.3 February 2004 Abstract: .. dIF/dt = 2800A/μs. Parameter. Turn-off delay time. Fall time. Turn-off energy loss. Turn-on delay .. dIF/dt = 2800A/μs. Parameter. Turn-off delay time. Fall time. Turn-off energy loss. Turn-on delay ..  Tags: S000   DIM500BSS06-S000	136.51 Kb	9 Pages	Original
	First line: DIM500BSS06-S000 DIM500BSS06-S000 DS5677-1.4 April 2006 (LN24534) Abstract: .. dIF/dt = 2800A/μs. Parameter. Turn-off delay time. Fall time. Turn-off energy loss. Turn-on delay .. dIF/dt = 2800A/μs. Parameter. Turn-off delay time. Fall time. Turn-off energy loss. Turn-on delay ..  Tags:   DIM500BSS06-S000	139.28 Kb	9 Pages	Original
	First line: DFM400PXM33-A000 DFM400PXM33-A000 DS5488-1.4 June 2008 (LN26127) Abstract: .. dIF/dt = 2800A/μs, VR = 1800V 1800V . Parameter. Peak reverse recovery current. Reverse recovery ..  Tags:   DFM400PXM33-A000	131.39 Kb	7 Pages	Original
	First line: 18650 a5n 800 14h AEGIS A5N:900.XXH Abstract: .. Initial TJ = 25 C, 50-60Hz 50-60Hz half sine, Ipeak = 2800A. Use low values for ITM < π rated IT AV TEST CONDITIONS. --- TJ = 125 C Av. power = VT TO * IT AV +rT * [IT RMS ] 2, 180 Half Sine. TC = 125 C, 12V anode ..  Tags: a5n 800 14h 18650   datasheet abstract..	527.18 Kb	4 Pages	Original
	First line: 600V igbt dc to dc buck converter 40A GTO thyristor High Frequency Induction Heating rectifier three phase scr Power Semiconductor Solutions FAST RECOVERY THREE-PHASE DIODE MODULES ASSEMBLIES IGBT ASSEMBLIES CUSTOM MODULES Abstract: .. VOLTAGE: 250V 250V TO 3300V 3300V CURRENT: 50A TO 2800A. VOLTAGE: 30V TO 4500V 4500V CURRENT: 50A TO 1500A 1500A . POW-R-PAK. Commercial / Moisture Resistant / Hermetic. Applications Include: Customer Specific. Substrates ..  Tags: rectifier three phase scr High Frequency Induction Heating 40A GTO thyristor 600V igbt dc to dc buck converter SCR Inverter datasheet   datasheet abstract..	2110.89 Kb	8 Pages	Original
	First line: APTGT150H60TG VBUS VCES 600V 150A 80°C Abstract: .. �C 15 μC Tj = 25 �C 1.7 Er Reverse Recovery Energy IF = 150A 150A VR = 300V 300V di/dt =2800A/μs Tj = 150 �C 3.6 mJ. APTGT150H60TG APTGT150H60TG . APTGT150H60TG APTGT150H60TG – Rev 1 December, 2005. APT website – http://www.advancedpower.com ..  Tags:   APTGT150H60TG	279.48 Kb	5 Pages	Original
	First line: Abstract: .. I TAV vor = 0 A 2400A 2400A 2800A 3100 A. 3400A 3400A 3600A 3600A . 30.000. 50.000. Technische Information / Technical Information. Gleichrichterdiode Rectifier Diode 46 DN 02 .. 06 N. Normiertes Grenzlastintegral ..  Tags: equivalent c 5100  DIODE A118   datasheet abstract..	119.66 Kb	11 Pages	Original
	First line: 2007A Filtering Application Suppression small signal application such suppression kinds filters broadband transformers, offers wide range toroids well range cores ST/SQ cores. These available material grades especially developed that purpose with initial permeabilities from 2500 10000. Fig. Abstract: .. A T-2800A 27.6 � 0.85 17.6 � 0.55 19 � 0.70 10500 8700 6800 6200 4300 3600. A T-3150A T-3150A 31.5 � 0.95 19 � 0.60 12.5 � 0.45 7550 6600 5000 4400 3200 2650. A T-3600A T-3600A 36 � 1.10 23 � 0.70 15 � 0.55 7700 7200 5350 4700 3350 ..  Tags: 2007A* t-1600a  2007A  1606a*   datasheet abstract..	27.22 Kb	1 Pages	Original
	First line: Ordering number: 2800A DD50R Diffused Junction Type Silicon Diode Ultrahigh-Definition Display Damper Diode High breakdown voltage (Vrrm 1500V). High reliability. Capable being mounted easily dissipating heat rapidly because one-point fixing type plastic molded package. Fast forward/reverse recovery Abstract: .. Ordering number: EN 2800A DD50R DD50R Diffused Junction Type Silicon Diode Ultrahigh-Definition Display Damper Diode Features †� High breakdown voltage Vrrm 1500V 1500V . †� High reliability. †� Capable ..  Tags:   datasheet abstract..	75.23 Kb	2 Pages	OCR Scan
	First line: GTO thyristor 1200V 50A MOSFET welding INVERTER SCR Inverter datasheet induction melting igbt circuit for induction melting Global Power-Semiconductor Solution Provider Quick Reference Guide Abstract: .. VOLTAGE: 250V 250V TO 3300V 3300V CURRENT: 50A TO 2800A. IGBT ASSEMBLIES. Commercial / Moisture Resistant / Hermetic. Applications Include: ● Customer Specific. Substrates: ● Aluminum Nitride. ● Alumina. ● ..  Tags: igbt circuit for induction melting induction melting SCR Inverter datasheet MOSFET welding INVERTER GTO thyristor 1200V 50A   datasheet abstract..	483.88 Kb	8 Pages	Original
	First line: 1606A* Filtering Application Fig. Fig. Abstract: .. A T-2800A 27.6 � 0.85 17.6 � 0.55 19 � 0.70 10500 8700 6800 6200 4300 3600. A T-3150A T-3150A 31.5 � 0.95 19 � 0.60 12.5 � 0.45 7550 6600 5000 4400 3200 2650. A T-3600A T-3600A 36 � 1.10 23 � 0.70 15 � 0.55 7700 7200 5350 4700 3350 ..  Tags: 2007A  1606a*   datasheet abstract..	27.63 Kb	1 Pages	Original
	First line: CM1400DU-24NF Mega Power DualTM IGBTMOD 1400 Amperes/1200 Volts Abstract: .. IC = 560A 560A IC = 2800A. IC = 1400A 1400A . COLLECTOR-EMITTER VOLTAGE, VCE, VOLTS COLLECTOR CURRENT, I. C ..  Tags: CM1400DU-24NF*   CM1400DU-24NF	62.16 Kb	4 Pages	Original
	First line: CM1400DU-24NF Mega Power DualTM IGBTMOD 1400 Amperes/1200 Volts Abstract: .. IC = 560A 560A IC = 2800A. IC = 1400A 1400A . COLLECTOR-EMITTER VOLTAGE, VCE, VOLTS COLLECTOR CURRENT, I. C ..  Tags:   CM1400DU-24NF	365.56 Kb	4 Pages	Original
	First line: DCR1376SBA36 Phase Control Thyristor DS4598-6.1 2005 (LN23954) Replaces July 2001 version DS4598-6.0 Abstract: .. dI/dt Rate of rise of on-state current From 67% VDRM 2800A Repetitive 50Hz 50Hz - 150 A/μs. Gate source 20V, 20Ω, Non-repetitive - 300 A/μs. tr < 1.0μs, Tj = 125 � C. VT TO Threshold voltage ‐ Low level At Tvj ..  Tags:   DCR1376SBA36	827.53 Kb	9 Pages	Original
	First line: DFM400NXM33-A000 DFM400NXM33-A000 DS5474-1.3 October 2001 Abstract: .. dIF/dt = 2800A/μs, VR = 1800V 1800V . Parameter. Peak reverse recovery current. Reverse recovery ..  Tags:   DFM400NXM33-A000	113.01 Kb	7 Pages	Original
	First line: DFM400NXM33-A000 DFM400NXM33-A000 Fast Recovery Diode Module Target Information DS5474-1.3 October 2001 Abstract: .. dIF/dt = 2800A/μs, VR = 1800V 1800V . Parameter. Peak reverse recovery current. Reverse recovery ..  Tags: TH 3005  NH fuse 500 A   DFM400NXM33-A000	119.17 Kb	7 Pages	Original
	First line: ic cd 4017 uln280x ULN2825A ULN2814* uln2803 to drive 7 segment display Integrated Circuits ULN2801A/LWT ULN2825A/LW THROUGH Abstract: .. NO. A-10 A-10 .872B 872B RECOMMEf* \ DED MAXIM UM CURRENT Lv - SERIES ULh k -2800A AND ULN-2820A ULN-2820A 4 4BER F OU si DUCTING i LTAN iOU S L S ^^^ 6 �3 NUf. COh SIMl PUTS-"" V 0 10 20 30 40 50 60 /0 80 PER CENT DUTY CYCLE Dwg. ..  Tags: uln2803 to drive 7 segment display ULN2814* ULN2825A uln280x ic cd 4017   datasheet abstract..	411.65 Kb	8 Pages	OCR Scan
	First line: DFM400PXM33-A000 DFM400PXM33-A000 Fast Recovery Diode Module Target Information DS5488-1.3 November 2002 Abstract: .. dIF/dt = 2800A/μs, VR = 1800V 1800V . Parameter. Peak reverse recovery current. Reverse recovery ..  Tags:   DFM400PXM33-A000	141.31 Kb	7 Pages	Original
	First line: Abstract: .. I TAV vor = 0 A 2400A 2400A 2800A 3100 A. 3400A 3400A 3600A 3600A . 30.000. 50.000. Technische Information / Technical Information. Gleichrichterdiode Rectifier Diode 46 DN 02 .. 06 N. Normiertes Grenzlastintegral ..  Tags:   datasheet abstract..	110.3 Kb	12 Pages	Original
	First line: Abstract: .. I TAV vor = 0 A 2400A 2400A 2800A 3100 A. 3400A 3400A 3600A 3600A . 30.000. 50.000. Technische Information / Technical Information. Gleichrichterdiode Rectifier Diode 46 DN 02 .. 06 N. Normiertes Grenzlastintegral ..  Tags:   datasheet abstract..	139 Kb	12 Pages	Original
	First line: DFM400NXM33-A000 DFM400NXM33-A000 Fast Recovery Diode Module Target Information DS5474-1.3 October 2001 Abstract: .. dIF/dt = 2800A/μs, VR = 1800V 1800V . Parameter. Peak reverse recovery current. Reverse recovery ..  Tags:   DFM400NXM33-A000	119.12 Kb	7 Pages	Original
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