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RF-HDT-SJLS-G1 Texas Instruments
RF-HDT-SNLE-G1 Texas Instruments TAG-IT(TM) HF-I STANDARD TRANSPONDER CHIP (WAFER, INKED, GRIND, SAWN ON TAPE)
RF-HDT-WNMC-M0 Texas Instruments Tag-it(TM) HF-I Plus Transponder Chip (Wafer, unprocessed) 0-WAFERSALE
RF-HDT-AJLC-G0 Texas Instruments
RF-HDT-WNME-M0 Texas Instruments Tag-it(TM) HF-I Standard Transponder Chip (Unprocessed) 0-WAFERSALE
RF-HDT-AJLE-G1 Texas Instruments RF-HDT-AJLE Tag-it(TM) HF-I Standard Transponder Chip (Wafer, bumped, inked, grind, sawn on tape)

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Part : Q33210BE00010 SG-210SEB 27 MHZ C Supplier : Seiko Epson Manufacturer : element14 Asia-Pacific Stock : 180 Best Price : $3.07 Price Each : $4.08
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Part : Q3514CA000007 HG-2150CA 27 MHZ SVH Supplier : Seiko Epson Manufacturer : element14 Asia-Pacific Stock : 17 Best Price : $8.53 Price Each : $11.5520
Part : X1E0000210152 TSX-3225 27 MHZ 9.0PF Supplier : Seiko Epson Manufacturer : element14 Asia-Pacific Stock : 496 Best Price : $0.46 Price Each : $0.76
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Part : X1G0044510005 SG5032CAN 27 MHZ TJGA Supplier : Seiko Epson Manufacturer : element14 Asia-Pacific Stock : 207 Best Price : $1.28 Price Each : $2.08
Part : X1G0044510005 SG5032CAN 27 MHZ TJGA Supplier : Seiko Epson Manufacturer : element14 Asia-Pacific Stock : 207 Best Price : $1.28 Price Each : $2.08
Part : X1G0044810004 SG7050CAN 27 MHZ Supplier : Seiko Epson Manufacturer : element14 Asia-Pacific Stock : 25 Best Price : $1.64 Price Each : $2.6720
Part : X1G0044810004 SG7050CAN 27 MHZ Supplier : Seiko Epson Manufacturer : element14 Asia-Pacific Stock : 25 Best Price : $1.64 Price Each : $2.6720
Part : Q33210BE00010 SG-210SEB 27 MHZ C Supplier : Seiko Epson Manufacturer : Farnell element14 Stock : 1,000 Best Price : £1.21 Price Each : £1.27
Part : Q3514CA000007 HG-2150CA 27 MHZ SVH Supplier : Seiko Epson Manufacturer : Farnell element14 Stock : 17 Best Price : £4.53 Price Each : £5.17
Part : X1E0000210152 TSX-3225 27 MHZ 9.0PF Supplier : Seiko Epson Manufacturer : Farnell element14 Stock : 448 Best Price : £0.3050 Price Each : £0.5260
Part : X1E0000210158 TSX-3225 27MHZ 10PF Supplier : Seiko Epson Manufacturer : Farnell element14 Stock : 89 Best Price : £0.26 Price Each : £0.46
Part : X1G0036210024 SG-211SCE 27 MHZ H Supplier : Seiko Epson Manufacturer : Farnell element14 Stock : 1,000 Best Price : £0.9570 Price Each : £0.9980
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Part : X1G0041710035 SG-210STF 27 MHZ L Supplier : Seiko Epson Manufacturer : Farnell element14 Stock : 193 Best Price : £0.8320 Price Each : £1.27
Part : X1G0044510005 SG5032CAN 27 MHZ TJGA Supplier : Seiko Epson Manufacturer : Farnell element14 Stock : 207 Best Price : £0.5310 Price Each : £0.83
Part : X1G0044810004 SG7050CAN 27 MHZ Supplier : Seiko Epson Manufacturer : Farnell element14 Stock : 25 Best Price : £0.6810 Price Each : £1.06
Part : ABLS-13.52127MHZ-10-J-4Q-T Supplier : Abracon Manufacturer : Sager Stock : - Best Price : $0.2945 Price Each : $0.3731
Part : ABMM2-7.3827MHZ-E2-T Supplier : Abracon Manufacturer : Sager Stock : - Best Price : - Price Each : -
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27mhz rf ic

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: MITSUBISHI SILICON TRANSISTOR "MITSUBISHI ELECTRIC CORP. RF POWER TRANSISTOR'. 2SC2312 27MHz , Collector Efficiency Vcc = 12V, f = 27MHz Pin =. 1.5.W . . 17 18.5 .60 70 > MITSUBISHI SILICON RF , '¢ FEATURES 1. High Output, High Gain : Po=17V7, Gpe=10.5dB; ©27MHz, 12V 2. Low. IMD. 3rd; -30dB(TYP), 11th , molded package. APPLICATIONS Especially suitable for the output stage of 27MHz 4W AM/ 12W SSB , Application RF - Power Amplification Structure Silicon NPN Epitaxial Planar Type Outline See Fig. 1 V -
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27mhz transistor A7 NPN EPITAXIAL A7 transistor transistor A7 Silicon NPN Epitaxial Planar Type RF POWER TRANSISTOR
Abstract: = 27MHz ­ 200 ­ pF Note 2. = RF POUT 100 (VCC) (IC) Note 3. Percentage , NTE329 Silicon NPN Transistor RF Power Amp, CB Description: The NTE329 is designed primarily , Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . , +200°C Note 1. This device is designed for RF operation. The total device dissipation rating applies only when the device is operated as an RF amplifier. Electrical Characteristics: (TA = +25°C, unless NTE Electronics
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27mhz rf amplifier 27mhz rf amplifier NPN transistor
Abstract: 27MHz TX and RX PCB Layout 27MHz TX and RX PCB Layout HA0210T VCCGND MCU RF RF 1 27MHz TX and RX PCB Layout (Routing) PCB 45 6 mils. 6 mils. 6 mils. VCC GND 12 mils. IC Bypass IC Pin RF MCU MCU GND RF Pin Performance (Antenna) 40 mil 25 mil PCB 2 - -
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RF pcb antenna 27MHZ PCB Layout tx 2 ic
Abstract: IC The power supply of the RF and the MCU should be independent so as to avoid interference , PCB Layout Notes for 27MHz TX and RX Applications PCB Layout Notes for 27MHz TX and RX , reserved in advance. In addition to the antenna matching components, the RF PAOUT pin area should avoid being occupied with components which may influence proper RF operation. Figure 1 1 PCB Layout Notes for 27MHz TX and RX Applications Routing As right angles more easily accumulate charge, they -
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short distance rf tx ic PCB Antenna matching 27mhz ic D/NHA0210E
Abstract: MITSUBISHI RF POWER TRANSISTOR 2SC1944 NPN EPITAXIAL PLANAR TYPE DESCRIPTION 2SC1944 is a silicon NPN epitaxial planar type transistor designed for RF power amplifiers on HF bandmobile radio applications. FEATURES â'¢ High power gain : Gpe £ 11dB, @Vcc = 12V, f = 27MHz, Po = 13W â'¢ T0-220 package , '¢ Ability to withstanding infinite load VSWR when operated at Vcc = 16V, Po = 13W, f = 27MHz APPLICATIONS , Vebo Emitter-base voltage 5 v vceo Collector-emitter voltage Rbe = 00 40 v ic Collector current 6 -
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T30 transistor T-30
Abstract: = 27MHz ­ 200 ­ pF Note 1. = RF POUT 100 (VCC) (IC) Note 2. Percentage , NTE195A Silicon NPN Transistor RF Power Amp/Driver, CB Description: The NTE195A is designed , Current­Continuous, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . , IC = 200mA, VBE = 0 70 ­ ­ V Emitter­Base Breakdown Voltage V(BR)EB IE = 1mA, IC = 0 4 ­ ­ V ICBO VCB = 15V, IE = 0 ­ ­ 0.01 mA hFE VCE = 2V, IC NTE Electronics
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Common emitter amplifier
Abstract: NTE236 Silicon NPN Transistor Final RF Power Output (PO = 16W, 27MHz, SSB) Description: The NTE236 is a silicon NPN epitaxial planer type transistor designed for RF power amplifiers on HF band mobile radio applications. Features: D High Power Gain: Gpe 12dB (VCC = 12V, PO = 16W, f = 27MHz) D Ability to Withstand Infinite VSWR Load when Operated at: VCC = 16V, PO = 20W, f = 27MHz Application: D , . . . . . . . . . . . . . . . . . . . . . . . . . . 5V Collector Current, IC . . . . . . . . . . . NTE Electronics
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12v class d amplifier 20W 27MHz power amplifier
Abstract: NTE236 Silicon NPN Transistor Final RF Power Output (PO = 16W, 27MHz, SSB) Description: The NTE236 is a silicon NPN epitaxial planer type transistor designed for RF power amplifiers on HF band mobile radio applications. Features: D High Power Gain: Gpe 12dB (VCC = 12V, PO = 16W, f = 27MHz) D Ability to Withstand Infinite VSWR Load when Operated at: VCC = 16V, PO = 20W, f = 27MHz Application: D , . . . . . . . . . . . . . . . . . . . . . . . . . . 5V Collector Current, IC . . . . . . . . . . . NTE Electronics
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HF SSB APPLICATIONS HF power amplifier
Abstract: MITSUBISHI RF POWER TRANSISTOR DG17S24 7S1 2SC1944 NPN EPITAXIAL PLANAR TYPE DESCRIPTION OUTLINE DRAWING 2SC1944 is a silicon NPN epitaxial planar type transistor designed for RF power , FEATURES & â'¢ High power gain : Goe 2 11dB, @Vcc = 12V, f = 27MHz, Po = 13W 1 .3 ± 0 .4 - , .4 n O + Û.10 ' at Vcc = 16V, Po = 13W, f = 27MHz 5' h 0 .15 â'" -© APPLICATIONS , to ambient Junction to case Unit 6 D CD m II 8 Ic Parameter Collector-base -
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Abstract: ICC IPS009BLz-Cn Interchip Corporation Very Low Voltage Operation IC for XO16MHz to 48MHz FEATURES Low Voltage Operation1.2V3.3V Low Current Consumption , 0.75mm×0.70mm×0.15mmt Available Die form in wafle or Wafer form DESCRIPTION IPS009BLz is IC for SPXO corresponding , Voltage Operation IC for XO16MHz to 48MHz Electrical Specifications 1Recommended Opereting Condition , =1.6V3.3V VDD=1.8V±10 27MHz,VDD=1.8V - - - - 45 50 48 2 100 2 3 5 ±3.0 ±3.0 55 Interchip
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16MHZ Inter-Chip crystal oscilator 48mhz IC A 244 top 244 y IPS009BL XO16MH 056ICCNP009BL-E02
Abstract: =10uW, =650nm 100kHz reference, -3dB a~d, RF f=1MHz~27MHz 1 5 ns a~d In dark condition f=27MHz, BW=30kHz -82 -75 dBm RF In dark condition f=27MHz, BW=30kHz -73 -65 dBm , MITSUMI PD IC for Optical Pickups for DVD Players MM1779 PD IC for Optical Pickups for DVD Players Monolithic IC MM1779 Outline This IC is an I/V converting amplifier IC that incorporates , Applications 1. DVD players 4.0 mm, small transparent mold package PD IC for Optical Pickups for DVD Mitsumi
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Detector DVD player circuit diagram Detector "Detector IC" CD DVD 10 PIN dvd circuit diagram dvd optical pickup OPTICAL PICK-UP MM1779AB MM1779BB CMP-12C
Abstract: NTE322 Silicon NPN Transistor RF Power Output Description: The NTE322 is a silicon NPN RF power , Continuous Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . , Collector­Emitter Breakdown Voltage V(BR)CES IC = 150mA, VBE = 0, Note 2 65 ­ ­ V Emitter­Base Breakdown Voltage V(BR)EBO IE = 1mA, IC = 0 3 ­ ­ V mA Collector Cutoff Current ICBO VCB = 50V, IE = 0 ­ ­ 0.01 hFE IC = 100mA, VCE = 10V, Note 3 10 ­ ­ Cob NTE Electronics
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choke 380 65/3B
Abstract: 27MHz RF Power Amp Applications Absolute Maxima» Ratings at Ta=25°C Colleetor-to-Base Voltage CBO , =25°C Collector Cutoff Current ICB0 VCB=40V,IE=0 Emitter Cutoff Current VEB=4V,IC=0 â'¢ [EB0 DC Current Gain VCE=5Vt Ic=0.5A hFE Gain Bandwidth Product Vce =10V,Ic =0.1A fT Output Capacitance VCB=10V,f=1MHz Cob C-E Saturation Voltage VCE(sat) ic =1a »ib =0,1a B-E Saturation Voltage VBE(sat) IC=1A,Ib , »!R BE=150fí E-B Saturation Voltage ^(BR)EBO ie=100PA»IC=0 [At specified test circuit] Output Power -
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2SC207S transistor 2SC2078 2sc2078 2sc2078 Transistor EN462E 2SC2078 2010B D251MH/ 4147KI/3145KI/2274KI
Abstract: CONTROL TRANSMITTER IC The TA8136S is designed for a 1 chip transmitter IC including pulse generator, duty control mixer, carrier oscillator, and RF power amplifier. This IC has 7 control modes by , Generator Mixer Carrier ose. RF Power Amp. 961001EBA2 0 TOSHIBA is continually working to improve , specified, Ta =25°C, VCc = 9V, f0SC = 27MHz) CHARACTERISTIC SYMBOL TEST CIRCUIT TEST CONDITION MIN. TYP , Mode â'" 18 â'" Transmitter Output Power pO(1) 1 f0SC = 27MHz SW3 : OFF (Note) 16 30 â'" mW PO (2 -
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27MHz rf transmitter 27MHz transmitter FM 27MHZ radio control circuit 27mhz transmitter circuit 27mhz transmitter IC 27mhz transmitter KY-6008
Abstract: /PULSE h-FE AND Vc* , Ic ( CRITERIA FOR MEASURING DC/PULSE aâ"¢ ) STANDARD VALUE OF h PARAMETERS AND BIAS , OPERATION, OTHERWISE VALUE IN EMITTER-GROUNDED OPERATION. 0 fab OF RF CHARACTERISTIC, EXCEPT IN CASE OF * WHICH INDICATES VALUE OF f t . H Cob AND rbi' OF RF CHARACTERISTICS EXCEPT IN CASE OF * IN rbb' COLUMN , 30 25 4 2 A t T < 3 /zS, !'/< 1 /iS 102 â'¢ 772 RF. Conv. Mi*. Ose. Si. EP 15 30 120 125 , /'. 40 mW (J = 27MHz) 138B â  774 â  PA â'¢ 50 4 500 680 175 10 30 70 10 100 P»,-^ 70 mW -
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2SC769 138B w97b 100MH 800MH
Abstract: a~d, RF f=1MHz~27MHz ts MITSUMI PD IC for Optical Pickups for DVD Players MM1779 , reference, -3dB a~d In dark condition f=27MHz, BW=30kHz RF In dark condition f=27MHz, BW , MITSUMI PD IC for Optical Pickups for DVD Players MM1779 PD IC for Optical Pickups for DVD Players Monolithic IC MM1779 Outline This IC is an I/V converting amplifier IC that incorporates , O ut Frequency response Pr o Output voltage MITSUMI PD IC for Optical Pickups for Mitsumi
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Abstract: TRF7900 27-MHz RF Receiver The TRF7900 27-MHz RF receiver is used in the USB receiver dongle. The , (SLAU049) MSP430x11x2, MSP430x12x2 Mixed Signal Microcontroller data sheet (SLAS361) TRF7900 27-MHz RF Receiver data sheet (SWRS031) (www.ti.com) TRF7950 27-MHz RF Transmitter data sheet (www.ti.com) Avago , Application Report SLAA302 ­ May 2006 Ultra-Low-Power 27-MHz Wireless Mouse Reference Design , Technologies' ultra-low-power ADNS-3040 optical mouse sensor, and TI's TRF7950 27-MHz transmitter module. To Texas Instruments
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27-MHz Wireless Mouse RC1608J000CS 27MHz loop antenna design spst push button 0805D106KAT2A 27 MHZ transmitter 27-MH MSP430
Abstract: 5076 series VCXO IC 5076 series VCXO IC 5076 series VCXO · VCXOIC · · · · 0.5mA (B1 , f = 27MHz, , VDD = 1.8V) · 1.3MHz fo, fo/2, fo/4, fo/8, fo/16 · VC 10M (min) ± 160ppm (B1 , f = 27MHz) · CMOS ( = 300, C0 = 1.5pF) · 2 PAD · , ( ) ( ) Voltage Regulator Rf VDD CIN Oscillation Detector XT RD COUT XTN RVC2 VC 1 N , MHz *1 fo fOUT CLOUT 15pF *1. NPC ) 5076 series VDD-VSS 0.01uF IC Nippon Precision Circuits
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WF5076 CF5076 5076b max5076 5076A1 5076A2 5076A3 5076A4
Abstract: forward current gain * Voe = 10V. Ic = 0.1A 10 50 180 â'" Po Output power V0C = 12V, Pm =0.5W, f = 27MHz , MITSUBISHI RF POWER TRANSISTOR NPN EPITAXIAL PLANAR TYPE DESCRIPTION 2SC1945 is a silicon NPN epitaxial planar type transistor designed for RF power amplifiers on HF band mobile radio applications. FEATURES â'¢ High power gain: Gpe^14.5dB @VCC = 12 V, P0 = 14W, f = 27MHz â'¢ Emitter ballasted , mounting. â'¢ Ability of withstanding infinite load VSWR when operated at Vcc = 16V, P0 = 18W, f = 27MHz -
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TO220 RF POWER TRANSISTOR NPN IDO24 TRANSISTOR 2sC1945 12V-pm 2sC1945 NPN circuit rf amplifier 2sc1945 T-30E
Abstract: reference, -3dB Group delay deviation note 2-5 tgd a~d, RF f=1~27MHz Output noise level a~d In dark condition f=27MHz, BW=30kHz Vn note 2-5 RF In dark condition f=27MHz, BW=30kHz note1-1 : Measure output , Monolithic IC MM1730XB Outline This IC is an I/V conversion amplifier including photodiode elements which , for DVD/CD MM1730XB MITSUMI Pin Configuration RF 12 GND 11 E 10 VCC 9 , Output of electrical Output signal converted from 50 optical signals. GND Vcc 1 RF Mitsumi
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photodiode dvd cd cd photo detector dark detector application CMP-12A
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