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Part Manufacturer Description Datasheet BUY
TPD4E004DSFR Texas Instruments UNIDIRECTIONAL, SILICON, TVS DIODE visit Texas Instruments
TPD3E001DRY Texas Instruments UNIDIRECTIONAL, SILICON, TVS DIODE visit Texas Instruments
TPD2E001YFPR Texas Instruments DIODE UNIDIRECTIONAL, SILICON, TVS DIODE, LEAD FREE, DSBGA-4, Transient Suppressor visit Texas Instruments
ISL99125BDRZ-T Intersil Corporation 25A DrMOS Module with Diode Emulation and PS4; QFN24; Temp Range: 0° to 70° visit Intersil
ISL99135BDRZ-T Intersil Corporation 35A DrMOS Module with Diode Emulation and PS4; QFN24; Temp Range: 0° to 70° visit Intersil
UC1610J/883B Texas Instruments SILICON, BRIDGE RECTIFIER DIODE visit Texas Instruments

25c diode

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: -24)*0.0535); Temperature Dependant Resistor D1 INT KATHODE GAP3SLT33_25C; Call the 25C Diode Model D2 ANODE KATHODE GAP3SLT33_PIN; Call the PiN Diode Model .MODEL GAP3SLT33_25C D + IS 1.39E-14 RS 2.88 + N GeneSiC Semiconductor
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GAP3SLT33-220FP 04-SEP-2013 TEMP-24 01E-11 00E-10 00E-03
Abstract: ); Temperature Dependant Resistor D1 INT KATHODE GB01SLT12_25C; Call the 25C Diode Model D2 ANODE KATHODE GB01SLT12_PIN; Call the PiN Diode Model .MODEL GB01SLT12_25C D + IS 7.27E-19 RS 0.592251 + N 1 IKF GeneSiC Semiconductor
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GB01SLT12-214 09-SEP-2013 90E-11 08E-17

GB05SHT12-CAL SPICE

Abstract: high-temperature-sic-bare-die ); Temperature Dependant Resistor D1 INT KATHODE GB05SHT12_25C; Call the 25C Diode Model D2 ANODE KATHODE GB05SHT12_PIN; Call the PiN Diode Model .MODEL GB05SHT12_25C D + IS 4.45E-15 RS 0.206 + N 1.18144 IKF
GeneSiC Semiconductor
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GB05SHT12-CAL SPICE high-temperature-sic-bare-die GB05SHT12-CAL 05-SEP-2013 93E-12
Abstract: ); Temperature Dependant Resistor D1 INT KATHODE GB01SLT12_25C; Call the 25C Diode Model D2 ANODE KATHODE GB01SLT12_PIN; Call the PiN Diode Model .MODEL GB01SLT12_25C D + IS 7.27E-19 RS 0.592251 + N 1 IKF GeneSiC Semiconductor
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GB01SLT12-220
Abstract: ); Temperature Dependant Resistor D1 INT KATHODE GB05SLT12_25C; Call the 25C Diode Model D2 ANODE KATHODE GB05SLT12_PIN; Call the PiN Diode Model .MODEL GB05SLT12_25C D + IS 5.83E-18 RS 0.1276 + N 1 IKF 602 + GeneSiC Semiconductor
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GB05SLT12-220

GAP3SHT33-CAU SPICE

Abstract: high-temperature-sic-bare-die ); Temperature Dependant Resistor D1 INT KATHODE GAP3SHT33_25C; Call the 25C Diode Model D2 ANODE KATHODE GAP3SHT33_PIN; Call the PiN Diode Model .MODEL GAP3SHT33_25C D + IS 1.39E-14 RS 2.88 + N 1.0120127 IKF
GeneSiC Semiconductor
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GAP3SHT33-CAU SPICE GAP3SHT33-CAU 00E-01 99E-18
Abstract: ); Temperature Dependant Resistor D1 INT KATHODE GAP3SLT33_25C; Call the 25C Diode Model D2 ANODE KATHODE GAP3SLT33_PIN; Call the PiN Diode Model .MODEL GAP3SLT33_25C D + IS 1.39E-14 RS 2.88 + N 1.0120127 IKF GeneSiC Semiconductor
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GAP3SLT33-214
Abstract: -24)*0.00035); Temperature Dependant Resistor D1 INT KATHODE GB20SLT12_25C; Call the 25C Diode Model D2 ANODE KATHODE GB20SLT12_PIN; Call the PiN Diode Model .MODEL GB20SLT12_25C D + IS 5.48E-17 RS 0.03214547 + GeneSiC Semiconductor
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GB20SLT12-247 15E-09 54E-13
Abstract: ); Temperature Dependant Resistor D1 INT KATHODE GB05SLT12_25C; Call the 25C Diode Model D2 ANODE KATHODE GB05SLT12_PIN; Call the PiN Diode Model .MODEL GB05SLT12_25C D + IS 5.83E-18 RS 0.1276 + N 1 IKF 602 + GeneSiC Semiconductor
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GB05SLT12-252

GB01SHT12-CAU SPICE

Abstract: high-temperature-sic-bare-die ); Temperature Dependant Resistor D1 INT KATHODE GB01SHT12_25C; Call the 25C Diode Model D2 ANODE KATHODE GB01SHT12_PIN; Call the PiN Diode Model .MODEL GB01SHT12_25C D + IS 1.88E-18 RS 0.9255 + N 1 IKF
GeneSiC Semiconductor
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GB01SHT12-CAU SPICE GB01SHT12-CAU 76E-16

GAP3SHT33-CAL SPICE

Abstract: high-temperature-sic-bare-die ); Temperature Dependant Resistor D1 INT KATHODE GAP3SHT33_25C; Call the 25C Diode Model D2 ANODE KATHODE GAP3SHT33_PIN; Call the PiN Diode Model .MODEL GAP3SHT33_25C D + IS 1.39E-14 RS 2.88 + N 1.0120127 IKF
GeneSiC Semiconductor
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GAP3SHT33-CAL SPICE GAP3SHT33-CAL

GB01SHT12-CAL SPICE

Abstract: high-temperature-sic-bare-die ); Temperature Dependant Resistor D1 INT KATHODE GB01SHT12_25C; Call the 25C Diode Model D2 ANODE KATHODE GB01SHT12_PIN; Call the PiN Diode Model .MODEL GB01SHT12_25C D + IS 1.88E-18 RS 0.9255 + N 1 IKF
GeneSiC Semiconductor
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GB01SHT12-CAL SPICE GB01SHT12-CAL

GB05SHT12-CAU SPICE

Abstract: high-temperature-sic-bare-die ); Temperature Dependant Resistor D1 INT KATHODE GB05SHT12_25C; Call the 25C Diode Model D2 ANODE KATHODE GB05SHT12_PIN; Call the PiN Diode Model .MODEL GB05SHT12_25C D + IS 4.45E-15 RS 0.206 + N 1.18144 IKF
GeneSiC Semiconductor
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GB05SHT12-CAU SPICE GB05SHT12-CAU
Abstract: ); Temperature Dependant Resistor D1 INT KATHODE GB01SLT12_25C; Call the 25C Diode Model D2 ANODE KATHODE GB01SLT12_PIN; Call the PiN Diode Model .MODEL GB01SLT12_25C D + IS 7.27E-19 RS 0.592251 + N 1 IKF GeneSiC Semiconductor
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GB01SLT12-252

1N8024-GA SPICE

Abstract: Resistor D1 INT KATHODE 1N8024_25C; Call the 25C Diode Model D2 ANODE KATHODE 1N8024_PIN; Call the PiN Diode Model .MODEL 1N8024_25C D + IS 1.88E-18 RS 0.9255 + N 1 IKF 98.29122743 + EG 1.2 XTI
GeneSiC Semiconductor
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1N8024-GA SPICE 1N8024-GA

1N8026-GA SPICE

Abstract: Resistor D1 INT KATHODE 1N8026_25C; Call the 25C Diode Model D2 ANODE KATHODE 1N8026_PIN; Call the PiN Diode Model .MODEL 1N8026_25C D + IS 4.45E-15 RS 0.206 + N 1.18144 IKF 112.92 + EG 1.2 XTI
GeneSiC Semiconductor
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1N8026-GA SPICE 1N8026-GA
Abstract: GB01SHT12_25C; Call the 25C Diode Model D2 ANODE KATHODE GB01SHT12_PIN; Call the PiN Diode Model .MODEL GB01SHT12_25C D + IS 1.88E-18 RS 0.9255 + N 1 IKF 98.29122743 + EG 1.2 XTI 3 + CJO 7.90E-11 ,   Electrical Datasheet* GB01SHT12-CAL Silicon Carbide Power Schottky Diode Chip Features ï'· ï'· ï'· ï'· ï'· ï'· ï'· 1200 V Schottky rectifier 250 °C maximum operating , Symbol Diode forward voltage VF Reverse current IR Total capacitive charge QC GeneSiC Semiconductor
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Abstract: GB01SHT12_25C; Call the 25C Diode Model D2 ANODE KATHODE GB01SHT12_PIN; Call the PiN Diode Model .MODEL GB01SHT12_25C D + IS 1.88E-18 RS 0.9255 + N 1 IKF 98.29122743 + EG 1.2 XTI 3 + CJO 7.90E-11 , Electrical Datasheet*   GB01SHT12-CAU Silicon Carbide Power Schottky Diode Chip Features ï'· ï'· ï'· ï'· ï'· ï'· ï'· 1200 V Schottky rectifier 250 °C maximum operating , Symbol Diode forward voltage VF Reverse current IR Total capacitive charge QC GeneSiC Semiconductor
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Abstract: GB50SLT12_25C; Call the 25C Diode Model .MODEL GB50SLT12_25C D + IS 1.99E-16 RS 0.015652965 + N 1 ,   Electrical Datasheet* GB50SLT12-CAL Silicon Carbide Power Schottky Diode Chip VRRM VF IF QC = = = = 1200 V 1.5 V 50 A 247 nC Features ï'· ï'· ï'· ï'· ï'· ï'· 1200 V Schottky rectifier 175 °C maximum operating temperature Electrically isolated base-plate , Parameter Symbol Diode forward voltage VF Reverse current IR Total capacitive charge QC GeneSiC Semiconductor
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39E-05 86E-09
Abstract: Resistor D1 INT KATHODE 1N8026_25C; Call the 25C Diode Model D2 ANODE KATHODE 1N8026_PIN; Call the PiN Diode Model .MODEL 1N8026_25C D + IS 4.45E-15 RS 0.206 + N 1.18144 IKF 112.92 + EG 1.2 XTI , 1N8026-GA High Temperature Silicon Carbide Power Schottky Diode VRRM IF (Tc=25°C) QC Features 1200 V 8A 17 nC Package ï'· ï'· ï'· ï'· ï'· ï'· ï'· ï'· ï'· = = = ï , = 250 °C, unless otherwise specified Parameter Symbol Diode forward voltage VF Reverse GeneSiC Semiconductor
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