NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
| Catalog Datasheet Results | Type | Document Tags |
| Abstract: communication equipment Absolute Maximum Ratings Ta = +25°C Diode Reversa Voilage, Vr 5.0V Forward Current , /10 »Vout Typical Characteristics Ta = +25°C Diode Power DlMlpiUon v» Ambient Temperature , 4N25 is an optically coupled isolator containing a GaAs light emitting diode and an NPN silicon photo , â-¡â-¡â-¡ciE3t, t, NEC Electrical Characteristics Ta = +25"C Umlts Test Conditions Parameter Symbol Min IVP Max Unit Diode Forward Voltage VF 1.1 1.4 V lF = 10mA Forward Voltage VF 1.2 1.5 V If = 50mA ... | OCR Scan |
4 pages, |
4N25 25c diode datasheet abstract |
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| Abstract: Static characteristics (7amb = 25°C) Forward voltage (IF = 100 mA) Reverse current (VR= 15V) Breakdown voltage (/R = 10|iA) Dynamic characteristics (7amb = 25°C) Diode capacitance (l/R = 0V;/=1 MHz) Case , BXY21 BXY21 CA Depletion-layer varactors BXY 21 CA is an epitaxial silicon mesa diode in a ceramic case. It is suitable for use as frequency converter and mixer in the GHz range. Type Order number BXY 21 CA Q62702-X54 Q62702-X54 4.15. 0.06 Weight approx. 1.4 g Dimensions in mm Maximum ratings (7amb = 25°C ... | OCR Scan |
1 pages, |
silicon epitaxial mesa diode bxy21ca mesa diode BXY21 Q62702-X54 BXY21 abstract |
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| Abstract: nA i* 100 nA VB„ >60 V Dynamic characteristics (7"amb = 25°C) Diode capacitance (l/R = 0; f=1 MHz , BXY24EA3 BXY24EA3 Depletion-layer varactor BXY 24 EA 3 is an epitaxial silicon mesa diode in a ceramic case. It is particularly suitable for use in the GHz range, e.g. as mixer, frequency converter and , ratings (7"amb = 25°C) Reverse voltage Forward current Junction temperature Storage temperature Power dissipation Thermal resistance Junction to case Static characteristics (7amb = 25°C) Forward voltage (iF = ... | OCR Scan |
1 pages, |
silicon epitaxial mesa diode NH SERIES BXY24EA3 Q62702-X76-E3 BXY24EA3 abstract |
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| Abstract: (VR = 25 Vdc, TA = 25°C) Diode Capacitance Temperature Coefficient Min 30 Typ - Max - , LESHAN RADIO COMPANY, LTD. Silicon Tuning Diode MMVL3102T1 MMVL3102T1 This device is designed in the , Total Device Dissipation FRÂ5 Board,* TA = 25°C Derate above 25°C Thermal Resistance Junction to , , Tstg *FRÂ4 Minimum Pad ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted , 1.0 MHz) Device MMVL3102T1 MMVL3102T1 Ct, Diode Capacitance VR = 3.0 Vdc, f = 1.0 MHz pF Min Nom Max ... | Original |
2 pages, |
MMVL3102T1 MMVL3102T1 abstract |
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| Abstract: Maximum Ratings TVJ = 25°C to 150°C 40 ±20 VGS V V ID25 ID90 TC = 25°C TC = 90°C 190 145 A A IF25 IF90 TC = 25°C (diode) TC = 90°C (diode) 125 80 A A Symbol Conditions Characteristic Values (TVJ = 25°C, unless otherwise specified) min. typ. max. RDSon on , 25°C TVJ = 125°C TVJ = 25°C TVJ = 125°C 2.0 3.2 2 2.6 m m 4 V 1 uA mA 0.2 , trench technology: - logic level gate control - low RDSon - optimized intrinsic reverse diode · ... | Original |
2 pages, |
220-004P3 220-004P3 abstract |
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| Abstract: Applications MOSFETs Symbol Conditions VDSS Maximum Ratings TVJ = 25°C to 150°C 100 ±20 ID25 ID90 130 85 TC = 25°C (diode) TC = 90°C (diode) A A A A TC = 25°C TC = 90°C , ; ID = 35 A VGSth VDS = 20 V; ID = 1 mA IDSS VDS = VDSS; VGS = 0 V; TVJ = 25°C TVJ = 125°C IGSS Characteristic Values (TVJ = 25°C, unless otherwise specified) min. typ. max. TVJ = 25°C , technology: - low RDSon - optimized intrinsic reverse diode · package: - high level of integration - ... | Original |
2 pages, |
70-01P2 70-01P2 abstract |
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| Abstract: MOSFETs Symbol Conditions VDSS Maximum Ratings TVJ = 25°C to 150°C 40 ±20 VGS V V ID25 ID90 TC = 25°C TC = 90°C 190 145 A A IF25 IF90 TC = 25°C (diode) TC = 90°C (diode) 125 80 A A Symbol Conditions Characteristic Values (TVJ = 25°C, unless , 1 mA IDSS VDS = VDSS; VGS = 0 V; TVJ = 25°C TVJ = 125°C TVJ = 25°C TVJ = 125°C 2.0 , RDSon - optimized intrinsic reverse diode · package: - high level of integration - high current ... | Original |
2 pages, |
220-004P3 220-004P3 abstract |
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| Abstract: MOSFET T1 + T2 Symbol Conditions VDSS Maximum Ratings TVJ = 25°C to 150°C 100 ±20 VGS V V ID25 ID80 TC = 25°C TC = 80°C 680 500 A A IF25 IF80 (diode) TC = 25°C (diode) TC = 80°C 680 500 A A Symbol Conditions RDSon VGS = 10 V; ID = ID80 VGSth VDS = 20 V; ID = 30 mA IDSS VDS = 0.8 · VDSS; VGS = 0 V; TVJ = 25°C TVJ = 125°C IGSS Characteristic Values (TVJ = 25°C, unless otherwise specified) min. typ. max. 1.8 2 4 ... | Original |
2 pages, |
VMM 650-01F diode B25 650-01F ZY180L ZY180R 650-01F abstract |
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| Abstract: Maximum Ratings TVJ = 25°C to 150°C 100 ±20 VGS V V ID25 ID80 TC = 25°C TC = 80°C x x 680 500 A A IF25 IF80 (diode) TC = 25°C (diode) TC = 80°C x x 680 500 , IDSS VDS = 0.8 · VDSS; VGS = 0 V; TVJ = 25°C TVJ = 125°C IGSS Characteristic Values (TVJ = 25°C, unless otherwise specified) min. typ. max. 1.8 2 4 VGS= 10 V; VDS = 75 V; ID = ID80 , reverse diode  low gate charge · thermistor for internal temperature measurement · package  low ... | Original |
2 pages, |
ZY180R ZY180L 650-01F VMM 650-01F 650-01F abstract |
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| Abstract: MOSFETs Symbol Conditions VDSS Maximum Ratings TVJ = 25°C to 150°C 55 ±20 VGS V V ID25 ID90 TC = 25°C TC = 90°C 160 120 A A IF25 IF90 TC = 25°C (diode) TC = 90°C (diode) 135 90 A A AC drives · in automobiles - electric power steering - starter generator , Features Conditions Characteristic Values (TVJ = 25°C, unless otherwise specified) min. typ. max. , 25°C TVJ = 125°C IGSS Qg Qgs Qgd td(on) tr td(off) tf 3 2 VGS= 10 V; VDS = 30 V; ID ... | Original |
2 pages, |
starter/generator lift control Control of Starter-generator 160-0055P3 160-0055P3 abstract |
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| Abstract | Saved from | Date Saved | File Size | Type | Download |
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| (V) BZB784-C10 BZB784-C10 BZB784-C10 BZB784-C10 General purpose zener diodes 2 c.a. 200 350@Ttp/Tamb max. 25°C (mW) 40@Tj=25°C diodes 2 c.a. 200 350@Ttp/Tamb max. 25°C (mW) 40@Tj=25°C and tp max.=0.1ms (W) SOT323 (UMT3 General purpose zener diodes 2 c.a. 200 350@Ttp/Tamb max. 25°C (mW) 40@Tj=25°C and tp max.=0.1ms 15 BZB784-C2V7 BZB784-C2V7 BZB784-C2V7 BZB784-C2V7 General purpose zener diodes 2 c.a. 200 350@Ttp/Tamb max. 25°C (mW) 40 purpose zener diodes 2 c.a. 200 350@Ttp/Tamb max. 25°C (mW) 40@Tj=25°C and tp max.=0.1ms (W) SOT www.datasheetarchive.com/files/philips/pip/bzb784_series_2.html |
Philips | 23/04/2003 | 13.04 Kb | HTML | bzb784_series_2.html |
| Number Type Description VRRM IFP @ Ta = 25°C 8/20 ms Ptot @ Ta = 25°C IR max @ Ta = 25°C @ VR IR max @ Ta = 70°C @ VR VR (IR max) VF max @ IF IF (VF max) VFP max @ IPP 8/20 us IPP 8/20 us (VFP) Package V A W A A V V A V A u u m n l l n n n n n n n n n n l 0 1 2 3 4 5 6 7 8 9 10 11 12 13 DA106C1 DA106C1 DA106C1 DA106C1 DIODE ARRAY I/O BUS PROTECTION 25 12 0.75 2 50 12 1.2 50 9 12 SO8 DA106A1 DA106A1 DA106A1 DA106A1 DIODE ARRAY I/O BUS PROTECTION 25 12 0.75 2 50 12 1.2 50 9 12 SO8 www.datasheetarchive.com/files/stmicroelectronics/stonline/db/45.txt |
STMicroelectronics | 03/02/1999 | 0.44 Kb | TXT | 45.txt |
| diodes 2 c.a. 200 220@Ttp/Tamb max. 25°C (mW) SOT346 (SMT3, MPAK) appr.3 10 PZM11NB2A PZM11NB2A PZM11NB2A PZM11NB2A General purpose zener diodes 2 c.a. 200 220@Ttp/Tamb max. 25°C (mW) SOT346 (SMT3, MPAK) appr.3 11 PZM12NB2A PZM12NB2A PZM12NB2A PZM12NB2A General purpose zener diodes 2 c.a. 200 220@Ttp/Tamb max. 25°C (mW) SOT /Tamb max. 25°C (mW) SOT346 (SMT3, MPAK) appr.3 13 PZM15NB2A PZM15NB2A PZM15NB2A PZM15NB2A General purpose zener diodes 2 General purpose zener diodes 2 c.a. 200 220@Ttp/Tamb max. 25°C (mW) SOT346 (SMT3, MPAK) appr.3 www.datasheetarchive.com/files/philips/pip/pzm_na_series_4.html |
Philips | 23/04/2003 | 12.87 Kb | HTML | pzm_na_series_4.html |
| ST | AUTOMOTIVE TRANSIENT SUPPRESSORS - DIODE ARRAY I/O BUS PROTECTION Automotive PROTECTION CIRCUITS AUTOMOTIVE TRANSIENT SUPPRESSORS DIODE ARRAY I/O BUS PROTECTION Type Description VRRM IFP @ Ta = 25°C 8/20 ms Ptot @ Ta = 25°C IR max @ Ta = 25°C @ VR IR max @ Ta ) Package V A W uA uA V V mA V A DA106C1 DA106C1 DA106C1 DA106C1 DIODE DIODE ARRAY I/O BUS PROTECTION 25 12 0.75 2 50 12 1.2 50 9 12 SO8 Top www.datasheetarchive.com/files/stmicroelectronics/stonline/products/selector/45-v3.htm |
STMicroelectronics | 28/08/2000 | 6.06 Kb | HTM | 45-v3.htm |
| ST | AUTOMOTIVE TRANSIENT SUPPRESSORS - DIODE ARRAY I/O BUS PROTECTION Automotive PROTECTION CIRCUITS AUTOMOTIVE TRANSIENT SUPPRESSORS DIODE ARRAY I/O BUS PROTECTION Type Description VRRM IFP @ Ta = 25°C 8/20 ms Ptot @ Ta = 25°C IR max @ Ta = 25°C @ VR IR max @ Ta = 70°C @ VR VR (IR max) VF max @ IF IF (VF max A uA V V mA V A DA106C1 DA106C1 DA106C1 DA106C1 DIODE ARRAY I/O BUS PROTECTION 25 www.datasheetarchive.com/files/stmicroelectronics/stonline/products/selector/45.htm |
STMicroelectronics | 20/10/2000 | 6.13 Kb | HTM | 45.htm |
| AUTOMOTIVE TRANSIENT SUPPRESSORS - DIODE ARRAY I/O BUS PROTECTION Automotive PROTECTION CIRCUITS AUTOMOTIVE TRANSIENT SUPPRESSORS DIODE ARRAY I/O BUS PROTECTION Type Description VRRM IFP @ Ta = 25°C 8/20 ms Ptot @ Ta = 25°C IR max @ Ta = 25°C @ VR IR mA V A DA106C1 DA106C1 DA106C1 DA106C1 DIODE ARRAY I/O BUS PROTECTION 25 12 0.75 2 50 12 1.2 50 9 12 SO8 DA106A1 DA106A1 DA106A1 DA106A1 DIODE ARRAY I/O BUS PROTECTION 25 12 www.datasheetarchive.com/files/stmicroelectronics/stonline/products/selector/45-v2.htm |
STMicroelectronics | 14/06/1999 | 4.18 Kb | HTM | 45-v2.htm |
| AUTOMOTIVE TRANSIENT SUPPRESSORS - DIODE ARRAY I/O BUS PROTECTION Automotive PROTECTION CIRCUITS AUTOMOTIVE TRANSIENT SUPPRESSORS DIODE ARRAY I/O BUS PROTECTION Type Description VRRM IFP @ Ta = 25°C 8/20 ms Ptot @ Ta = 25°C IR max @ Ta = 25°C @ VR IR mA V A DA106C1 DA106C1 DA106C1 DA106C1 Part # Search DIODE ARRAY I/O BUS PROTECTION 25 12 0.75 2 50 12 1.2 50 9 12 SO8 DA106A1 DA106A1 DA106A1 DA106A1 Part # Search DIODE ARRAY I www.datasheetarchive.com/files/stmicroelectronics/stonline/products/selector/45-v1.htm |
STMicroelectronics | 31/03/1999 | 4.28 Kb | HTM | 45-v1.htm |
| I FSM 10 ms 25°C i 2 t 10 ms 25 °C SEMIKRON THYRISTORS Avalanche Rectifier Diodes Rectifier Diodes Avalanche Rectifier Diodes Fast Rectifier Diodes Avalanche Rectifier Diodes www.datasheetarchive.com/files/semikron/skcweb/e/products/diodene_avalanche.html |
Semikron | 10/05/2004 | 13.43 Kb | HTML | diodene_avalanche.html |
| I FSM 10 ms 25°C i 2 t 10 ms 25 °C SEMIKRON THYRISTORS Avalanche Rectifier Diodes Rectifier Diodes Avalanche Rectifier Diodes Fast Rectifier Diodes Avalanche Rectifier Diodes www.datasheetarchive.com/files/semikron/skcweb/ru/products_ru/diodene_avalanche.html |
Semikron | 10/05/2004 | 16.12 Kb | HTML | diodene_avalanche.html |
| I FSM 10 ms 25°C i 2 t 10 ms 25 °C SEMIKRON THYRISTORS Avalanche Rectifier Diodes Rectifier Diodes Avalanche Rectifier Diodes Fast Rectifier Diodes Avalanche Rectifier Diodes www.datasheetarchive.com/files/semikron/skcweb/br/product_br/diodene_avalanche.html |
Semikron | 10/05/2004 | 13.67 Kb | HTML | diodene_avalanche.html |