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25c diode

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Abstract: -24)*0.0535); Temperature Dependant Resistor D1 INT KATHODE GAP3SLT33_25C; Call the 25C Diode Model D2 ANODE KATHODE GAP3SLT33_PIN; Call the PiN Diode Model .MODEL GAP3SLT33_25C D + IS 1.39E-14 RS 2.88 + N GeneSiC Semiconductor
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GAP3SLT33-220FP 04-SEP-2013 TEMP-24 01E-11 00E-10 00E-03
Abstract: ); Temperature Dependant Resistor D1 INT KATHODE GB01SLT12_25C; Call the 25C Diode Model D2 ANODE KATHODE GB01SLT12_PIN; Call the PiN Diode Model .MODEL GB01SLT12_25C D + IS 7.27E-19 RS 0.592251 + N 1 IKF GeneSiC Semiconductor
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GB01SLT12-214 09-SEP-2013 90E-11 08E-17
Abstract: ); Temperature Dependant Resistor D1 INT KATHODE GB05SHT12_25C; Call the 25C Diode Model D2 ANODE KATHODE GB05SHT12_PIN; Call the PiN Diode Model .MODEL GB05SHT12_25C D + IS 4.45E-15 RS 0.206 + N 1.18144 IKF GeneSiC Semiconductor
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GB05SHT12-CAL 05-SEP-2013 93E-12
Abstract: ); Temperature Dependant Resistor D1 INT KATHODE GB01SLT12_25C; Call the 25C Diode Model D2 ANODE KATHODE GB01SLT12_PIN; Call the PiN Diode Model .MODEL GB01SLT12_25C D + IS 7.27E-19 RS 0.592251 + N 1 IKF GeneSiC Semiconductor
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GB01SLT12-220
Abstract: ); Temperature Dependant Resistor D1 INT KATHODE GB05SLT12_25C; Call the 25C Diode Model D2 ANODE KATHODE GB05SLT12_PIN; Call the PiN Diode Model .MODEL GB05SLT12_25C D + IS 5.83E-18 RS 0.1276 + N 1 IKF 602 + GeneSiC Semiconductor
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GB05SLT12-220
Abstract: ); Temperature Dependant Resistor D1 INT KATHODE GAP3SHT33_25C; Call the 25C Diode Model D2 ANODE KATHODE GAP3SHT33_PIN; Call the PiN Diode Model .MODEL GAP3SHT33_25C D + IS 1.39E-14 RS 2.88 + N 1.0120127 IKF GeneSiC Semiconductor
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GAP3SHT33-CAU 00E-01 99E-18
Abstract: ); Temperature Dependant Resistor D1 INT KATHODE GAP3SLT33_25C; Call the 25C Diode Model D2 ANODE KATHODE GAP3SLT33_PIN; Call the PiN Diode Model .MODEL GAP3SLT33_25C D + IS 1.39E-14 RS 2.88 + N 1.0120127 IKF GeneSiC Semiconductor
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GAP3SLT33-214
Abstract: -24)*0.00035); Temperature Dependant Resistor D1 INT KATHODE GB20SLT12_25C; Call the 25C Diode Model D2 ANODE KATHODE GB20SLT12_PIN; Call the PiN Diode Model .MODEL GB20SLT12_25C D + IS 5.48E-17 RS 0.03214547 + GeneSiC Semiconductor
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GB20SLT12-247 15E-09 54E-13
Abstract: ); Temperature Dependant Resistor D1 INT KATHODE GB05SLT12_25C; Call the 25C Diode Model D2 ANODE KATHODE GB05SLT12_PIN; Call the PiN Diode Model .MODEL GB05SLT12_25C D + IS 5.83E-18 RS 0.1276 + N 1 IKF 602 + GeneSiC Semiconductor
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GB05SLT12-252
Abstract: ); Temperature Dependant Resistor D1 INT KATHODE GB01SHT12_25C; Call the 25C Diode Model D2 ANODE KATHODE GB01SHT12_PIN; Call the PiN Diode Model .MODEL GB01SHT12_25C D + IS 1.88E-18 RS 0.9255 + N 1 IKF GeneSiC Semiconductor
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GB01SHT12-CAU 76E-16
Abstract: ); Temperature Dependant Resistor D1 INT KATHODE GAP3SHT33_25C; Call the 25C Diode Model D2 ANODE KATHODE GAP3SHT33_PIN; Call the PiN Diode Model .MODEL GAP3SHT33_25C D + IS 1.39E-14 RS 2.88 + N 1.0120127 IKF GeneSiC Semiconductor
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GAP3SHT33-CAL
Abstract: ); Temperature Dependant Resistor D1 INT KATHODE GB01SHT12_25C; Call the 25C Diode Model D2 ANODE KATHODE GB01SHT12_PIN; Call the PiN Diode Model .MODEL GB01SHT12_25C D + IS 1.88E-18 RS 0.9255 + N 1 IKF GeneSiC Semiconductor
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GB01SHT12-CAL
Abstract: ); Temperature Dependant Resistor D1 INT KATHODE GB05SHT12_25C; Call the 25C Diode Model D2 ANODE KATHODE GB05SHT12_PIN; Call the PiN Diode Model .MODEL GB05SHT12_25C D + IS 4.45E-15 RS 0.206 + N 1.18144 IKF GeneSiC Semiconductor
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GB05SHT12-CAU
Abstract: ); Temperature Dependant Resistor D1 INT KATHODE GB01SLT12_25C; Call the 25C Diode Model D2 ANODE KATHODE GB01SLT12_PIN; Call the PiN Diode Model .MODEL GB01SLT12_25C D + IS 7.27E-19 RS 0.592251 + N 1 IKF GeneSiC Semiconductor
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GB01SLT12-252
Abstract: Resistor D1 INT KATHODE 1N8024_25C; Call the 25C Diode Model D2 ANODE KATHODE 1N8024_PIN; Call the PiN Diode Model .MODEL 1N8024_25C D + IS 1.88E-18 RS 0.9255 + N 1 IKF 98.29122743 + EG 1.2 XTI GeneSiC Semiconductor
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1N8024-GA
Abstract: Resistor D1 INT KATHODE 1N8026_25C; Call the 25C Diode Model D2 ANODE KATHODE 1N8026_PIN; Call the PiN Diode Model .MODEL 1N8026_25C D + IS 4.45E-15 RS 0.206 + N 1.18144 IKF 112.92 + EG 1.2 XTI GeneSiC Semiconductor
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1N8026-GA
Abstract: GB01SHT12_25C; Call the 25C Diode Model D2 ANODE KATHODE GB01SHT12_PIN; Call the PiN Diode Model .MODEL GB01SHT12_25C D + IS 1.88E-18 RS 0.9255 + N 1 IKF 98.29122743 + EG 1.2 XTI 3 + CJO 7.90E-11 ,   Electrical Datasheet* GB01SHT12-CAL Silicon Carbide Power Schottky Diode Chip Features ï'· ï'· ï'· ï'· ï'· ï'· ï'· 1200 V Schottky rectifier 250 °C maximum operating , Symbol Diode forward voltage VF Reverse current IR Total capacitive charge QC GeneSiC Semiconductor
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Abstract: GB01SHT12_25C; Call the 25C Diode Model D2 ANODE KATHODE GB01SHT12_PIN; Call the PiN Diode Model .MODEL GB01SHT12_25C D + IS 1.88E-18 RS 0.9255 + N 1 IKF 98.29122743 + EG 1.2 XTI 3 + CJO 7.90E-11 , Electrical Datasheet*   GB01SHT12-CAU Silicon Carbide Power Schottky Diode Chip Features ï'· ï'· ï'· ï'· ï'· ï'· ï'· 1200 V Schottky rectifier 250 °C maximum operating , Symbol Diode forward voltage VF Reverse current IR Total capacitive charge QC GeneSiC Semiconductor
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Abstract: GB50SLT12_25C; Call the 25C Diode Model .MODEL GB50SLT12_25C D + IS 1.99E-16 RS 0.015652965 + N 1 ,   Electrical Datasheet* GB50SLT12-CAL Silicon Carbide Power Schottky Diode Chip VRRM VF IF QC = = = = 1200 V 1.5 V 50 A 247 nC Features ï'· ï'· ï'· ï'· ï'· ï'· 1200 V Schottky rectifier 175 °C maximum operating temperature Electrically isolated base-plate , Parameter Symbol Diode forward voltage VF Reverse current IR Total capacitive charge QC GeneSiC Semiconductor
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39E-05 86E-09
Abstract: Resistor D1 INT KATHODE 1N8026_25C; Call the 25C Diode Model D2 ANODE KATHODE 1N8026_PIN; Call the PiN Diode Model .MODEL 1N8026_25C D + IS 4.45E-15 RS 0.206 + N 1.18144 IKF 112.92 + EG 1.2 XTI , 1N8026-GA High Temperature Silicon Carbide Power Schottky Diode VRRM IF (Tc=25°C) QC Features 1200 V 8A 17 nC Package ï'· ï'· ï'· ï'· ï'· ï'· ï'· ï'· ï'· = = = ï , = 250 °C, unless otherwise specified Parameter Symbol Diode forward voltage VF Reverse GeneSiC Semiconductor
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