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SEP8706-001 Honeywell Sensing and Control SEP8706 Series AlGaAs Infrared Emitting Diode, Side-emitting Plastic Package ri Buy
SEP8505-001 Honeywell Sensing and Control SEP8505 Series GaAs Infrared Emitting Diode, T-1 Package ri Buy
SME2470-001 Honeywell Sensing and Control SME2470 Series Infrared Emitting Diode, Surface-mount Package, Glass Lens ri Buy

25c diode

Catalog Datasheet Results Type PDF Document Tags
Abstract: IGBT Modules IGBT Modules - H bridge configuration Type vOE S V 'c* A Tc = 25°C IGBT 600 600 1200 600 600 1200 45 72 50 75 90 165 c a o A v " CE|Mt)typ V 25°C IGBT 1.9 1.9 2.5 1.9 2.1 2.1 mJ V 125°C IGBT 1.0 1.7 2.8 1.7 2.5 10.0 K/W Us A Tc = 25°C diode 36 72 50 72 140 200 New , )typ V 25°C IGBT 1.9 2.3 3.9 1.9 Eon mJ V 125°C IGBT 0.68 1.1 0.2 0.3 ^thJC K/W u A Tc = 25°C diode 3.5 , 80°C IGBT 30 50 35 50 60 115 IGBT 0.88 0.55 0.55 0.55 0.44 0.19 u A Tc = 80° C diode 24 45 35 45 ... OCR Scan
datasheet

1 pages,
30.39 Kb

MKI 50-06A7 igbt eco-pac 100-12E8 IGBT PIN CONFIGURATION datasheet abstract
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Abstract: Type Vces V A U A Tc = 80°C IGBT V TC £Ç #)typ T ,= 25°C IGBT mJ Tj = 125°C IGBT W K/W Us A u A ther mistor Tc = 25°C IGBT 600 V sixpack modules MWI MWI MWI MWI MWI MWI 30-06A7 30-06A7 30-06A7T 30-06A7T 50-06A7 50-06A7 50-06A7T 50-06A7T 75-06A7 75-06A7 75-06A7T 75-06A7T 600 600 600 600 600 600 45 45 75 75 90 90 IGBT Tc = 25°C diode T c= 80°C diode 24 24 45 45 85 85 30 30 50 50 60 60 1.9 1.9 1.9 1.9 2.1 2.1 1.0 1.0 1.7 1.7 2.5 2.5 , 80°C IGBT V v c e y t)ty p T = 25°C IGBT E* mJ T .= 125°C IGBT ^thJC K/W IG BT Us A Tc = 25°C diode ... OCR Scan
datasheet

1 pages,
38.14 Kb

MWI 15-12A7 100-12E8 Bt 35 transistor 75-06A7T datasheet abstract
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Abstract: communication equipment Absolute Maximum Ratings Ta = +25°C Diode Reversa Voilage, Vr 5.0V Forward Current , /10 »Vout Typical Characteristics Ta = +25°C Diode Power DlMlpiUon v» Ambient Temperature , 4N25 is an optically coupled isolator containing a GaAs light emitting diode and an NPN silicon photo , ---ciE3t, t, NEC Electrical Characteristics Ta = +25"C Umlts Test Conditions Parameter Symbol Min IVP Max Unit Diode Forward Voltage VF 1.1 1.4 V lF = 10mA Forward Voltage VF 1.2 1.5 V If = 50mA ... OCR Scan
datasheet

4 pages,
147.74 Kb

4N25 25c diode transistor KJJ datasheet abstract
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Abstract: Static characteristics (7amb = 25°C) Forward voltage (IF = 100 mA) Reverse current (VR= 15V) Breakdown voltage (/R = 10|iA) Dynamic characteristics (7amb = 25°C) Diode capacitance (l/R = 0V;/=1 MHz) Case , BXY21 BXY21 CA Depletion-layer varactors BXY 21 CA is an epitaxial silicon mesa diode in a ceramic case. It is suitable for use as frequency converter and mixer in the GHz range. Type Order number BXY 21 CA Q62702-X54 Q62702-X54 4.15. 0.06 Weight approx. 1.4 g Dimensions in mm Maximum ratings (7amb = 25°C ... OCR Scan
datasheet

1 pages,
18.77 Kb

silicon epitaxial mesa diode bxy21ca mesa diode BXY21 62702-X54 BXY21 abstract
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Abstract: nA i* 100 nA VB„ >60 V Dynamic characteristics (7"amb = 25°C) Diode capacitance (l/R = 0; f=1 MHz , BXY24EA3 BXY24EA3 Depletion-layer varactor BXY 24 EA 3 is an epitaxial silicon mesa diode in a ceramic case. It is particularly suitable for use in the GHz range, e.g. as mixer, frequency converter and , ratings (7"amb = 25°C) Reverse voltage Forward current Junction temperature Storage temperature Power dissipation Thermal resistance Junction to case Static characteristics (7amb = 25°C) Forward voltage (iF = ... OCR Scan
datasheet

1 pages,
20.08 Kb

silicon epitaxial mesa diode NH SERIES BXY24EA3 datasheet abstract
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Abstract: 25°C Diode Continuous Forward Current @ Tc = 25°C Diode Maximum Forward Current Repetitive Peak Reverse , COMPLEX MODULE 0 Diode @ Inverter & Brake Part Symbol V fm Characteristics Diode Forward Voltage , Diode Reverse Recovery Time If=10A VR=200V di/dt= -20A/uS Tc=25"C Tc=100"C Tc=25"C Tc=100 "C Tc=25"C Tc=100"C 90 130 0.9 1.4 40 63 130 1.2 78 - nS - Irr Diode Peak Reverse Recovery Current A - Qrr Diode Reverse Recovery Charge nC - ® Diode @ Converter Part Symbol V ... OCR Scan
datasheet

8 pages,
205.48 Kb

EVG 12 SMC7G10US60 SMC7G10US60 abstract
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Abstract: @Tc = 25°C Diode Continuous Forward Current @ Tc = 25°C Diode Maximum Forward Current Repetitive Peak , ELECTRICAL CHARACTERISTICS (Tc=25°C,Unless Otherwise Specified) ® Diode @ Inverter Part Symbol V fm COMPACTS COMPLEX MODULE Characteristics Diode Forward Voltage Conditions |F=15A Tc=25"C Tc=100 "C Min - Typ 1.9 1.8 Max 2.8 - Unit V - Trr Diode Reverse Recovery Time |F=15A , 250 130 1.8 115 - nS - Irr Diode Peak Reverse Recovery Current A - Qrr ... OCR Scan
datasheet

8 pages,
203.4 Kb

SMC6G15US60 SMC6G15US60 abstract
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Abstract: ns . 55 90 Tj = 125°C lF = 8.0A A Tj = 25°C Diode Peak Reverse Recovery Current - 3.5 5.0 . VR = 200V 4.5 8.0 Tj = 125°C - nC T j = 25°C Diode Reverse Recovery Charge 65 138 . 124 360 di/dt 200A/ps T j = 125°C . A/ps T j = 25°C Diode Peak Rate of Fall of Recovery 240 - . During tb 210 , Standard Speed CoPack INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features · , well-known IGBT line. They provide the convenience of an IBGT and an ultrafast recovery diode in one package ... OCR Scan
datasheet

10 pages,
257.26 Kb

datasheet abstract
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Abstract: Current (VR = 25 Vdc, TA = 25°C) Diode Capacitance Temperature Coefficient (VR = 4.0 Vdc, f = 1.0 MHz , MMVL3102T1 MMVL3102T1 Preferred Device Silicon Tuning Diode This device is designed in the Surface Mount , VOLTAGE VARIABLE CAPACITANCE DIODE MAXIMUM RATINGS Symbol VR IF Rating Continuous Reverse Voltage Peak , Device Dissipation FR-5 Board,* TA = 25°C Derate above 25°C Thermal Resistance Junction to Ambient Max , Rev. 1 Publication Order Number: MMVL3102T1/D MMVL3102T1/D MMVL3102T1 MMVL3102T1 ELECTRICAL CHARACTERISTICS (TA = 25°C ... Original
datasheet

2 pages,
82.8 Kb

MMVL3102T1 MMVL3102T1 abstract
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Abstract: Current (VR = 25 Vdc, TA = 25°C) Diode Capacitance Temperature Coefficient (VR = 4.0 Vdc, f = 1.0 MHz , MMVL3102T1 MMVL3102T1 Preferred Device Silicon Tuning Diode This device is designed in the Surface Mount , VOLTAGE VARIABLE CAPACITANCE DIODE MAXIMUM RATINGS Symbol VR IF Rating Continuous Reverse Voltage Peak , Device Dissipation FR­5 Board,* TA = 25°C Derate above 25°C Thermal Resistance Junction to Ambient , Rev. 1 Publication Order Number: MMVL3102T1/D MMVL3102T1/D MMVL3102T1 MMVL3102T1 ELECTRICAL CHARACTERISTICS (TA = 25°C ... Original
datasheet

2 pages,
89.28 Kb

capacitance diode MMVL3102T1 MMVL3102T1 abstract
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Datasheet Content (non pdf)

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Automotive PROTECTION CIRCUITS AUTOMOTIVE TRANSIENT SUPPRESSORS DIODE ARRAY I/O BUS PROTECTION Type Description VRRM IFP @ Ta = 25°C 8/20 ms Ptot @ Ta = 25°C IR max @ Ta = 25°C @ VR IR max @ Ta = 70°C @ VR VR (IR max) VF max V A W µA µA V V mA V A DA106C1 DA106C1 DA106C1 DA106C1 DIODE DA106A1 DA106A1 DA106A1 DA106A1 DIODE ARRAY I/O BUS PROTECTION 25 12 0.75 2 50 12 1.2 50 9 12
www.datasheetarchive.com/files/stmicroelectronics/stonline/products/selector/45-v2.htm
STMicroelectronics 14/06/1999 4.18 Kb HTM 45-v2.htm
Automotive PROTECTION CIRCUITS AUTOMOTIVE TRANSIENT SUPPRESSORS DIODE ARRAY I/O BUS PROTECTION Type Description VRRM IFP @ Ta = 25°C 8/20 ms Ptot @ Ta = 25°C IR max @ Ta = 25°C @ VR IR max @ Ta = 70°C @ VR VR (IR V A W µA µA V V mA V A DA106C1 DA106C1 DA106C1 DA106C1 DIODE ARRAY DA106A1 DA106A1 DA106A1 DA106A1 DIODE ARRAY I/O BUS PROTECTION 25 12 0.75 2 50 12 1.2 50 9 12
www.datasheetarchive.com/files/stmicroelectronics/stonline/products/selector/45.htm
STMicroelectronics 20/10/2000 6.13 Kb HTM 45.htm
Automotive PROTECTION CIRCUITS AUTOMOTIVE TRANSIENT SUPPRESSORS DIODE ARRAY I/O BUS PROTECTION Type Description VRRM IFP @ Ta = 25°C 8/20 ms Ptot @ Ta = 25°C IR max @ Ta = 25°C @ VR IR max @ Ta = 70°C @ VR VR (IR max) VF max @ IF IF µA V V mA V A DA106C1 DA106C1 DA106C1 DA106C1 DIODE ARRAY I/O BUS PROTECTION 25 12 0.75 2 50 12 1.2 50 9 12 SO8 DA106A1 DA106A1 DA106A1 DA106A1 DIODE ARRAY I/O BUS PROTECTION 25
www.datasheetarchive.com/files/stmicroelectronics/stonline/products/selector/45-v3.htm
STMicroelectronics 28/08/2000 6.06 Kb HTM 45-v3.htm
Automotive PROTECTION CIRCUITS AUTOMOTIVE TRANSIENT SUPPRESSORS DIODE ARRAY I/O BUS PROTECTION Type Description VRRM IFP @ Ta = 25°C 8/20 ms Ptot @ Ta = 25°C IR max @ Ta = 25°C @ VR IR max @ Ta = 70°C @ VR VR (IR max) VF max Search DIODE ARRAY I/O BUS PROTECTION 25 12 0.75 2 50 12 1.2 50 9 12 SO8 DA106A1 DA106A1 DA106A1 DA106A1 Part # Search DIODE ARRAY I/O BUS PROTECTION 25 12 0.75 2 50
www.datasheetarchive.com/files/stmicroelectronics/stonline/products/selector/45-v1.htm
STMicroelectronics 31/03/1999 4.28 Kb HTM 45-v1.htm
68HC705JJ7/JP7 68HC705JJ7/JP7 68HC705JJ7/JP7 68HC705JJ7/JP7 Temperature Sensing Diode question: How can I use the 68HC705JJ7/JP7 68HC705JJ7/JP7 68HC705JJ7/JP7 68HC705JJ7/JP7 temperature sensing diode? answer: The MCU contains an internal diode connected to V SS which will be sensitive to the temperature of the device. The tolerance on the 25C voltage and TC of this diode does not make it more accurate than about 10C, but it can be diode for more precise temperature measurements. This calibration data may be stored in the Personality
www.datasheetarchive.com/files/motorola/cdcsic2/web/techhelp/faq/jpfamily/tempsens.htm
Motorola 15/04/1998 3.58 Kb HTM tempsens.htm
Number Type Description VRRM IFP @ Ta = 25°C 8/20 ms Ptot @ Ta = 25°C IR max @ Ta = 25°C @ VR IR max @ Ta = 70°C @ VR VR (IR max) VF max @ IF IF (VF max) VFP max @ IPP 8/20 µs IPP 8/20 µs (VFP) Package V A W A A V V A V A µ µ 1 1 1 1 1 1 1 1 1 1 1 1 DA106C1 DA106C1 DA106C1 DA106C1 DIODE ARRAY I/O BUS PROTECTION 25 12 0.75 2 50 12 1.2 50 9 12 SO8 DA106A1 DA106A1 DA106A1 DA106A1 DIODE ARRAY I/O BUS PROTECTION 25 12 0.75 2 50 12 1.2 50
www.datasheetarchive.com/files/stmicroelectronics/stonline/db/45-v1.txt
STMicroelectronics 11/06/1999 0.6 Kb TXT 45-v1.txt
Number Type Description VRRM IFP @ Ta = 25°C 8/20 ms Ptot @ Ta = 25°C IR max @ Ta = 25°C @ VR IR max @ Ta = 70°C @ VR VR (IR max) VF max @ IF IF (VF max) VFP max @ IPP 8/20 µs IPP 8/20 µs (VFP) Package V A W A A V V A V A µ µ m n l l n n n n n n n n n n l 0 1 2 3 4 5 6 7 8 9 10 11 12 13 DA106C1 DA106C1 DA106C1 DA106C1 DIODE ARRAY I/O BUS PROTECTION 25 12 0.75 2 50 12 1.2 50 9 12 SO8 DA106A1 DA106A1 DA106A1 DA106A1 DIODE ARRAY I/O BUS PROTECTION 25 12 0.75 2 50 12 1.2 50 9 12 SO8
www.datasheetarchive.com/files/stmicroelectronics/stonline/db/45.txt
STMicroelectronics 03/02/1999 0.44 Kb TXT 45.txt
No abstract text available
www.datasheetarchive.com/download/13727087-644242ZC/30910.zip (Z:\cd1\selectionguides\selectionguides\content\30910.txt)
Philips 14/04/2003 1.71 Kb ZIP 30910.zip
Temp Diode Temp Max Error 30°C to 50°C 120°C to 140°C ±1.0°C (max) 0°C to 85°C 25°C to 140°C > Hardware Monitor > LM64 LM64 Product Folder ±1°C Remote Diode Temperature Remote Diode Temperature Sensor with PWM Fan Control and 5 GPIO's 376 Kbytes 3-Dec-03 View Full production N/A N/A N/A - General Description The LM64 is a remote diode remote diode. The LM64 remote temperature accuracy is factory trimmed for a MMBT3904 MMBT3904 MMBT3904 MMBT3904 diode-connected
www.datasheetarchive.com/files/national/lm64.htm
National 27/02/2004 9.14 Kb HTM lm64.htm
(includes quantization error) T A = 25°C to 125°C ±3.0°C (max) Remote Diode Temp Accuracy (includes Product Folder ±1°C Accurate, Remote Diode and Local Digital Temperature Sensor with Download Receive via Email LM99 ±1°C Accurate, High Temperature, Remote Diode Temperature ZXTT T17C 10-12 weeks 50000 General Description The LM99 is an 11-bit remote diode temperature or a thermal diode commonly found on Graphics Processor Units (GPU), Computer Processor Units (CPU or
www.datasheetarchive.com/files/national/lm99.html
National 25/09/2003 9.59 Kb HTML lm99.html