NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
| Part | Manufacturer | Description | Type | Ordering |
| 25NC12 | N/A | The Diode Data Book with Package Outlines 1993 |
2 pages, |
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| 25NC12 | Toshiba | Standard Rectifier |
1 pages, |
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| 25NC12 | Toshiba | Standard Rectifiers / Fast Recovery Rectifiers / Misc Rectifiers / HEDs |
2 pages, |
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| 25NC12 | N/A | Shortform Semicon, Diode, and SCR Datasheets |
1 pages, |
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| Catalog Datasheet Results | Type | Document Tags |
| Abstract: 160 Maximum Allowable Ambient Temperature Ta OC) 200 25NC12 lOOOV 25A Unit in Unit in MAXIMUM , 25FC13 25FC13,25FD13 25FD13 300 25GC12 25GC12 400 25JC12 25JC12 600 25LC12 25LC12 800 25NC12 1000 Average Forward Current , ) A 25FC13 25FC13,25FD13 25FD13 25GC12 25GC12 600(50Hz) 25JC12 25JC12 25LC12 25LC12 25NC12 Storage Temperature , 25FC13 25FC13,25FD13 25FD13 25GC12 25GC12 - - 6.0 25JC12 25JC12 25LC12 25LC12 25NC12 Thermal Resistance ... | OCR Scan |
1 pages, |
tare 22CD11 22FC11 22FD11 25cd13 25FC13 25FD13 39a1a 22CC11 25CC13 25NC12 22FCH 22FD1 22FCH abstract |
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| Abstract: 1BZ61 IS1835 25A 25CC13 25CC13 25CD13 25CD13 25FC13 25FC13 25FD13 25FD13 25GC12 25GC12 25JC12 25JC12 25LC12 25LC12 25NC12 60A 60BC15 60BC15 60DC15 60DC15 60FCI5 60FCI5 60GC15 60GC15 ... | OCR Scan |
2 pages, |
25QF11 3LZ61 toshiba 6jg11 0R06YXZ31 1n61a1 diode 6jc12 15FWJ11 3BZ61 1.5kv fast recovery diodes 400YD21 1NZ61 toshiba 1s1891 1JH62 25FXF12 S5277B 1S1885 S5277B abstract |
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| Abstract: 1S291 1S291 25JC12 25JC12 1S292 1S292 25LC12 25LC12 1S293 1S293 25LF11 25LF11 1S294 1S294 25NC12 ... | Original |
8 pages, |
30L6P43A 1LH62 25J4B41 4D4B41 20L6P44 4G4B41 1BH62 1D4B42 1ZB36 0R1NYZ41 30L6P44 4J4B41 s5502n 1S1941 4B4B41 datasheet abstract |
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| Abstract: ] 42 25NC12 1000 25 50R 600 50 j 1. 2 25 6mA 1000 150] 42 30BG11 30BG11 100 30 300 1. 5 100 ... | OCR Scan |
2 pages, |
22CD11 22FC11 22FD11 25CD13 25EXH11 25FD13 25LC12 25NC12 30JG11 30LDZ41 IR 30D1 26CC13 100X100X2 22CD11 abstract |
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| Abstract: ] 42 25NC12 1000 25 50R 600 50 j 1. 2 25 6mA 1000 150] 42 30BG11 30BG11 100 30 300 1. 5 100 ... | OCR Scan |
2 pages, |
22CD11 22FC11 22FD11 25CD13 25EXH11 25FD13 25LC12 25NC12 IR 30D1 30JG11 30ldz41 26CC13 100X100X2 22CD11 abstract |
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| Abstract: ] 42 25NC12 1000 25 50R 600 50 j 1. 2 25 6mA 1000 150] 42 30BG11 30BG11 100 30 300 1. 5 100 ... | OCR Scan |
2 pages, |
22CD11 22FC11 22FD11 25CD13 25FD13 25LC12 25NC12 IR 30D1 30dl4 30df2 ir 30d2 30JG11 25EXH11 30LDZ41 26CC13 22CD11 abstract |
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| Abstract: ] 42 25NC12 1000 25 50R 600 50 j 1. 2 25 6mA 1000 150] 42 30BG11 30BG11 100 30 300 1. 5 100 ... | OCR Scan |
2 pages, |
25NC12 25LC12 25FD13 25CD13 22FD11 22FC11 22CD11 25EXH11 30JG11 26CC13 100X100X2 22CD11 abstract |
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| Abstract: ] 42 25NC12 1000 25 50R 600 50 j 1. 2 25 6mA 1000 150] 42 30BG11 30BG11 100 30 300 1. 5 100 ... | OCR Scan |
2 pages, |
hsm 002 22FC11 22FD11 25CD13 25EXH11 25FD13 25LC12 25NC12 22CD11 30JG11 26CC13 100X100X2 22CD11 abstract |
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| Abstract: ] 42 25NC12 1000 25 50R 600 50 j 1. 2 25 6mA 1000 150] 42 30BG11 30BG11 100 30 300 1. 5 100 ... | OCR Scan |
2 pages, |
22CD11 22FC11 22FD11 25CD13 25EXH11 25FD13 25LC12 25NC12 30JG11 30LDZ41 26CC13 100X100X2 22CD11 abstract |
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| Abstract: ] 42 25NC12 1000 25 50R 600 50 j 1. 2 25 6mA 1000 150] 42 30BG11 30BG11 100 30 300 1. 5 100 ... | OCR Scan |
2 pages, |
sg 87a 22FC11 22FD11 25CD13 25EXH11 25FD13 25LC12 25NC12 30D2 22CD11 30JG11 26CC13 100X100X2 22CD11 abstract |
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| Abstract: ] 42 25NC12 1000 25 50R 600 50 j 1. 2 25 6mA 1000 150] 42 30BG11 30BG11 100 30 300 1. 5 100 ... | OCR Scan |
2 pages, |
30JG11 25NC12 25LC12 25FD13 25CD13 22FD11 22FC11 22CD11 25EXH11 26CC13 100X100X2 22CD11 abstract |
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| Abstract: ] 42 25NC12 1000 25 50R 600 50 j 1. 2 25 6mA 1000 150] 42 30BG11 30BG11 100 30 300 1. 5 100 ... | OCR Scan |
2 pages, |
22CD11 22FC11 22FD11 25cd13 25FD13 25LC12 25NC12 30ldz41 30JG11 25EXH11 26CC13 100X100X2 25CD13 22CD11 abstract |
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| Abstract: STC4539 STC4539 N&P Pair Enhancement Mode MOSFET 6.8A / -6.2A DESCRIPTION The STC4539 STC4539 is the N & P-Channel enhancement mode power field effect transistor using high cell density DMOS trench technology. This high density process is especially tailored to minimize on-state resistance and provide superior switching performance. This device is particularly suited for low voltage application such as notebook computer power management and other battery powered circuits, where high-side switching, ... | Original |
10 pages, |
STC4539 STC4539 abstract |
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| Part | Manufacturer | Description | Shortform Datasheet | Ordering |
| 25NC12 | N/A | Silicon Rectifier | |
| NTE Electronics Part | Industry Part |