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25N120 Datasheet

Part Manufacturer Description PDF Type Ordering
25N120 IXYS Low Vce(sat) High Speed IGBT
ri

2 pages,
45.83 Kb

Original Buy
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25N120

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: IXEH 25N120 IXEH 25N120D1 NPT3 IGBT IC25 = 36 A VCES = 1200 V VCE(sat) typ = 2.6 V C C G TO-247 AD G E G E IXEH 25N120 C IXEH 25N120D1 Maximum Ratings , All rights reserved 1-4 IXEH 25N120 IXEH 25N120D1 Diode [D1 version only] Equivalent , 0.133 J/K; Rth2 = 0.295 K/W © 2005 IXYS All rights reserved 2-4 IXEH 25N120 IXEH 25N120D1 80 , Fig. 5 Typ. turn on gate charge 0 © 2005 IXYS All rights reserved 3-4 IXEH 25N120 IXEH ... IXYS
Original
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4 pages,
85.34 Kb

25N120 ixys 25N120 25N120D1 TEXT
datasheet frame
Abstract: IXEH 25N120 IXEH 25N120D1 NPT3 IGBT IC25 = 36 A = 1200 V VCES VCE(sat) typ = 2.6 V C C G TO-247 AD G E G E IXEH 25N120 C IXEH 25N120D1 t Conditions , 0.63 K/W 0549 RthJC © 2005 IXYS All rights reserved 1-4 IXEH 25N120 IXEH 25N120D1 Diode , 0.335 K/W Cth2 = 0.133 J/K; Rth2 = 0.295 K/W © 2005 IXYS All rights reserved 2-4 IXEH 25N120 IXEH 25N120D1 80 60 A 50 VGE = 17 V A IC 15 V 60 VGE = 17 V IC 15 V TVJ ... IXYS
Original
datasheet

4 pages,
108.68 Kb

FII30-12E 25N120D1 25N120 ixys 25N120D IXEH 25N120D1 25n120 IGBT 25N120 IC IGBT 25N120 TEXT
datasheet frame
Abstract: VCE(sat) IC = IC90, VGE = 15 V 25N120 25N120A IXYS reserves the right to change limits, test conditions and dimensions. 96 3 4 V V q IXGH 25N120 IXGH 25N120A Symbol , increased RG 650 1000 ns 25N120 25N120A 700 600 800 ns ns 25N120A 11 mJ , VCES , higher TJ or increased RG mJ 720 1000 ns 25N120 25N120A 1200 800 1200 ns ns 25N120A 15 RthJC RthCK 1 = Gate 2 = Collector 3 = Emitter Tab = Collector ... Original
datasheet

2 pages,
37.02 Kb

N120 25N120A n120 30 igbt IC IGBT 25N120 25N120 TEXT
datasheet frame
Abstract: IXEH 25N120 IXEH 25N120D1 NPT3 IGBT IC25 = 36 A = 1200 V VCES VCE(sat) typ = 2.6 V C C G TO-247 AD G E G E IXEH 25N120 C IXEH 25N120D1 Symbol Conditions , IXYS All rights reserved 1-4 IXEH 25N120 IXEH 25N120D1 Diode [D1 version only] Equivalent , 0 © 2005 IXYS All rights reserved 3-4 IXEH 25N120 IXEH 25N120D1 20 4.0 250 td(on , 0.252 .170 .216 242 BSC 0549 Dim. © 2005 IXYS All rights reserved 2-4 IXEH 25N120 ... IXYS
Original
datasheet

4 pages,
80.07 Kb

FII30-12E 25N120D 25N12 25N120D1 .25N12 25N120 25n120 IGBT IC IGBT 25N120 TEXT
datasheet frame
Abstract: IC90, VGE = 15 V © 1996 IXYS All rights reserved 25N120 25N120A 3 4 V V l 92783D 92783D (3/96) IXGH 25N120 IXGH 25N120A Symbol Test Conditions Characteristic Values (TJ = 25 , ) > 0.8 · VCES, higher TJ or increased RG 650 1000 ns 25N120 25N120A 700 600 800 25N120A 11 mJ 100 ns 250 1 = Gate 2 = Collector 3 = Emitter Tab = Collector ns ns , increased RG TO-247 AD Outline mJ 720 1000 ns 25N120 25N120A 1200 800 1200 ns ... IXYS
Original
datasheet

2 pages,
45.83 Kb

N120A 92783D MOS-Gated Transistors N120 .25N12 25N120 ixys .25n120 IC IGBT 25N120 25N120A 25N120 TEXT
datasheet frame
Abstract: OIXYS IGBT L o w v CE(s, , CES ^C25 CE{sat) High speed IXGH 25N120 IXGH 25N120A 1200 V , = 420V 'c = ' c» .V qe = 1 5 V ^GES V CE(sat) 25N120 25N120A 3 ¡XYS reserves the , : Switching times may increase fo r VC E (Clamp) > 0.8 · VC E S , higher T j or increased RG 25N120 25N120A , Remarks: Switching times may increase for VC E (Clamp) > 0.8 · VC E S , higher T j or increased RG 25N120 25N120A 25N120A . 250 4.2 720 1200 ; 800 15 1.0 1.65 I 2.87 4. ; .4 ¡20.80 j l 5.75 I 5.20 j ... OCR Scan
datasheet

2 pages,
209.28 Kb

IC IGBT 25N120 25N120 TEXT
datasheet frame
Abstract: density max. V 1200 2.5 T j = 25°C Tj = 125°C = ' c 9o. V g e = 1 5 V 25N120 25N120A , 3 b 5 3 47T ■ IXGH 25N120 IXGH 25N120A □IXYS Symbol Test Conditions , ns 25N120 25N120A 1200 800 1200 ns ns 25N120A 15 A 1 - - - ll- c 1 = , covered by one of the following U.S.patents: L*b6bE£b 1000 25N120 25N120A Inductive load, Td , 50 nC 90 nC 100 ns ns 650 ns 800 ns ns 700 600 25N120A 11 ... OCR Scan
datasheet

2 pages,
75.52 Kb

TEXT
datasheet frame
Abstract: IXEH 25N120 IXEH 25N120D1 Advanced Technical Information NPT3 IGBT IC25 = 36 A = 1200 V VCES VCE(sat) typ. = 2.6 V C C G TO-247 AD G E G E IXEH 25N120 C IXEH 25N120D1 Symbol Conditions VCES TVJ = 25°C to 150°C Maximum Ratings 1200 tSC (SCSOA) TC = 25°C A 10 us W VCE = 900V; VGE = ±15 V; RG = 56 ; TVJ = 125°C non-repetitive , Clara CA 95054 Phone: (408) 982-0700, Fax: 408-496-0670 IXEH 25N120 IXEH 25N120D1 Diode [D1 ... IXYS
Original
datasheet

2 pages,
41.07 Kb

D-68623 25n120 IGBT IC IGBT 25N120 25N120 25N120D1 TEXT
datasheet frame
Abstract: _ 25N120 25N120A 25N120A td{otl) 1000 1200 ns ns ns mJ 0.205 0.225 .780 .800 .177 .140 , 0.8 * VC E S VGE= 0 V VC E = 0 V ,V G E = ±2 0 V 'c = U . V c e = 15V , °C _ _ 25N120A 25N120A ns ns ns mJ ns ns mJ 700 600 11 100 250 4.2 720 t ri E on ... OCR Scan
datasheet

2 pages,
128.32 Kb

.25N120 ixgh25n120 IC IGBT 25N120 25N120 TEXT
datasheet frame
Abstract: IGBT, E-Series, improved NPT³ technology bondable VCES TVJM Short Circuit Proof solderable Type IC V 1200 IXED 15N120 15N120 IXED 25N120 IXED 50N120 50N120 IXED 75N120 75N120 IXED 100N120 100N120 IXED 150N120 150N120 1700 IXED 75N170 75N170 IXED 100N170 100N170 °C 150 A 20 25 50 75 100 150 75 100 VCEsat TVJ = 25°C 125°C typ. V typ. V 2.80 2.00 1.90 1.90 1.90 2.15 2.30 2.30 2.75 2.20 2.10 2.10 2.10 2.40 2.60 2.60 @IC A 20 25 50 75 100 150 75 100 Eoff Eon inductive load TVJ = 125°C mJ 2.8 3.4 6.7 10.0 12.0 21.0 25.0 ... IXYS
Original
datasheet

1 pages,
123.08 Kb

mj 1352 IC IGBT 25N120 IC IGBT 15N120 75N120 100N170 15N120 150N120 100N-120 25N120 100N120 TEXT
datasheet frame
Abstract: IXEH 25N120 IXEH 25N120D1 25N120D1 Advanced Technical Information NPT3 IGBT IC25 = 36 A = 1200 V VCES VCE(sat) typ. = 2.6 V C C G TO-247 AD G E G E IXEH 25N120 C IXEH 25N120D1 25N120D1 Symbol Conditions VCES TVJ = 25°C to 150°C Maximum Ratings 1200 tSC (SCSOA) TC = 25°C A 10 us W VCE = 900V; VGE = ±15 V; RG = 56 ; TVJ = 125°C non-repetitive , Clara CA 95054 Phone: (408) 982-0700, Fax: 408-496-0670 IXEH 25N120 IXEH 25N120D1 25N120D1 Diode [D1 ... OCR Scan
datasheet

7 pages,
99.84 Kb

MGY25N 120/D TEXT
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