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IKW25N120T2 Infineon Technologies AG Insulated Gate Bipolar Transistor, 50A I(C), 1200V V(BR)CES, N-Channel, TO-247AD, GREEN, PLASTIC, TO-247, 3 PIN visit Digikey Buy
IXGH25N120 IXYS Corporation Insulated Gate Bipolar Transistor, 50A I(C), 1200V V(BR)CES, N-Channel, TO-247AD, TO-247AD, 3 PIN visit Digikey Buy
FGA25N120ANTDTU Fairchild Semiconductor Corporation Insulated Gate Bipolar Transistor, 25A I(C), 1200V V(BR)CES, N-Channel visit Digikey Buy
IHW25N120R2FKSA1 Infineon Technologies AG Insulated Gate Bipolar Transistor, 50A I(C), 1200V V(BR)CES, N-Channel, TO-247AC, GREEN, PLASTIC, TO-247, 3 PIN visit Digikey Buy
IKW25N120T2FKSA1 Infineon Technologies AG Insulated Gate Bipolar Transistor, 50A I(C), 1200V V(BR)CES, N-Channel, TO-247AD, GREEN, PLASTIC, TO-247, 3 PIN visit Digikey Buy
NGTB25N120FL3WG ON Semiconductor Ultra Field Stop - IGBT 1200V 25A, 30-TUBE visit Digikey Buy

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25N120 Datasheet

Part Manufacturer Description PDF Type
25N120 IXYS Low Vce(sat) High Speed IGBT Original

25N120

Catalog Datasheet MFG & Type PDF Document Tags

25N120

Abstract: 25N120 ixys IXEH 25N120 IXEH 25N120D1 NPT3 IGBT IC25 = 36 A VCES = 1200 V VCE(sat) typ = 2.6 V C C G TO-247 AD G E G E IXEH 25N120 C IXEH 25N120D1 Maximum Ratings , All rights reserved 1-4 IXEH 25N120 IXEH 25N120D1 Diode [D1 version only] Equivalent , 0.133 J/K; Rth2 = 0.295 K/W © 2005 IXYS All rights reserved 2-4 IXEH 25N120 IXEH 25N120D1 80 , Fig. 5 Typ. turn on gate charge 0 © 2005 IXYS All rights reserved 3-4 IXEH 25N120 IXEH
IXYS
Original
25N120 ixys

IC IGBT 25N120

Abstract: 25N120 IXEH 25N120 IXEH 25N120D1 NPT3 IGBT IC25 = 36 A = 1200 V VCES VCE(sat) typ = 2.6 V C C G TO-247 AD G E G E IXEH 25N120 C IXEH 25N120D1 t Conditions , 0.63 K/W 0549 RthJC © 2005 IXYS All rights reserved 1-4 IXEH 25N120 IXEH 25N120D1 Diode , 0.335 K/W Cth2 = 0.133 J/K; Rth2 = 0.295 K/W © 2005 IXYS All rights reserved 2-4 IXEH 25N120 IXEH 25N120D1 80 60 A 50 VGE = 17 V A IC 15 V 60 VGE = 17 V IC 15 V TVJ
IXYS
Original
IC IGBT 25N120 25n120 IGBT IXEH 25N120D1 25N120D FII30-12E

25N120

Abstract: IC IGBT 25N120 VCE(sat) IC = IC90, VGE = 15 V 25N120 25N120A IXYS reserves the right to change limits, test conditions and dimensions. 96 3 4 V V q IXGH 25N120 IXGH 25N120A Symbol , increased RG 650 1000 ns 25N120 25N120A 700 600 800 ns ns 25N120A 11 mJ , VCES , higher TJ or increased RG mJ 720 1000 ns 25N120 25N120A 1200 800 1200 ns ns 25N120A 15 RthJC RthCK 1 = Gate 2 = Collector 3 = Emitter Tab = Collector
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Original
n120 30 igbt IXGH25N120A N120 N120A

IC IGBT 25N120

Abstract: 25n120 IGBT IXEH 25N120 IXEH 25N120D1 NPT3 IGBT IC25 = 36 A = 1200 V VCES VCE(sat) typ = 2.6 V C C G TO-247 AD G E G E IXEH 25N120 C IXEH 25N120D1 Symbol Conditions , IXYS All rights reserved 1-4 IXEH 25N120 IXEH 25N120D1 Diode [D1 version only] Equivalent , 0 © 2005 IXYS All rights reserved 3-4 IXEH 25N120 IXEH 25N120D1 20 4.0 250 td(on , 0.252 .170 .216 242 BSC 0549 Dim. © 2005 IXYS All rights reserved 2-4 IXEH 25N120
IXYS
Original
25N12

25N120

Abstract: 25N120A IC90, VGE = 15 V © 1996 IXYS All rights reserved 25N120 25N120A 3 4 V V l 92783D (3/96) IXGH 25N120 IXGH 25N120A Symbol Test Conditions Characteristic Values (TJ = 25 , ) > 0.8 · VCES, higher TJ or increased RG 650 1000 ns 25N120 25N120A 700 600 800 25N120A 11 mJ 100 ns 250 1 = Gate 2 = Collector 3 = Emitter Tab = Collector ns ns , increased RG TO-247 AD Outline mJ 720 1000 ns 25N120 25N120A 1200 800 1200 ns
IXYS
Original
MOS-Gated Transistors

c2555

Abstract: 25N120 OIXYS IGBT L o w v CE(s, , CES ^C25 CE{sat) High speed IXGH 25N120 IXGH 25N120A 1200 V , = 420V 'c = ' c» .V qe = 1 5 V ^GES V CE(sat) 25N120 25N120A 3 ¡XYS reserves the , : Switching times may increase fo r VC E (Clamp) > 0.8 · VC E S , higher T j or increased RG 25N120 25N120A , Remarks: Switching times may increase for VC E (Clamp) > 0.8 · VC E S , higher T j or increased RG 25N120 25N120A 25N120A . 250 4.2 720 1200 ; 800 15 1.0 1.65 I 2.87 4. ; .4 ¡20.80 j l 5.75 I 5.20 j
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OCR Scan
c2555 25IM120A
Abstract: density max. V 1200 2.5 T j = 25°C Tj = 125°C = ' c 9o. V g e = 1 5 V 25N120 25N120A , 3 b 5 3 47T â  IXGH 25N120 IXGH 25N120A â¡IXYS Symbol Test Conditions , ns 25N120 25N120A 1200 800 1200 ns ns 25N120A 15 A 1 - - - ll- c 1 = , covered by one of the following U.S.patents: L*b6bE£b 1000 25N120 25N120A Inductive load, Td , 50 nC 90 nC 100 ns ns 650 ns 800 ns ns 700 600 25N120A 11 -
OCR Scan
IXGH25N120

25N120

Abstract: IC IGBT 25N120 IXEH 25N120 IXEH 25N120D1 Advanced Technical Information NPT3 IGBT IC25 = 36 A = 1200 V VCES VCE(sat) typ. = 2.6 V C C G TO-247 AD G E G E IXEH 25N120 C IXEH 25N120D1 Symbol Conditions VCES TVJ = 25°C to 150°C Maximum Ratings 1200 tSC (SCSOA) TC = 25°C A 10 us W VCE = 900V; VGE = ±15 V; RG = 56 ; TVJ = 125°C non-repetitive , Clara CA 95054 Phone: (408) 982-0700, Fax: 408-496-0670 IXEH 25N120 IXEH 25N120D1 Diode [D1
IXYS
Original
D-68623

25N120

Abstract: IC IGBT 25N120 _ 25N120 25N120A 25N120A td{otl) 1000 1200 ns ns ns mJ 0.205 0.225 .780 .800 .177 .140 , 0.8 * VC E S VGE= 0 V VC E = 0 V ,V G E = ±2 0 V 'c = U . V c e = 15V , °C _ _ 25N120A 25N120A ns ns ns mJ ns ns mJ 700 600 11 100 250 4.2 720 t ri E on
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OCR Scan

100N120

Abstract: 25N120 IGBT, E-Series, improved NPT³ technology bondable VCES TVJM Short Circuit Proof solderable Type IC V 1200 IXED 15N120 IXED 25N120 IXED 50N120 IXED 75N120 IXED 100N120 IXED 150N120 1700 IXED 75N170 IXED 100N170 °C 150 A 20 25 50 75 100 150 75 100 VCEsat TVJ = 25°C 125°C typ. V typ. V 2.80 2.00 1.90 1.90 1.90 2.15 2.30 2.30 2.75 2.20 2.10 2.10 2.10 2.40 2.60 2.60 @IC A 20 25 50 75 100 150 75 100 Eoff Eon inductive load TVJ = 125°C mJ 2.8 3.4 6.7 10.0 12.0 21.0 25.0
IXYS
Original
100N-120 IC IGBT 15N120 mj 1352

SMD diode b24

Abstract: diode b26 1200 B2-2 50 4.0 IXGH 17N100A IXGH 25N100A IXGH 25N120A IXGM 17N100A IXGM 25N100A IXGH 10N100A IXGP , -86 B2-90 B2-104 IXGN 50N60B IXGK 80N60A B2-108 B2-120 IXGH 17N100 IXGH 25M100 IXGH 25N120 IXGH 40N30A
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OCR Scan
60N60 SMD diode b24 diode b26 smd DIODE B28 20N60BU1 B292 60n60 igbt smd 12N100 T0-204 30N30/ 40N30/ 31N60 38N60

7N60B

Abstract: 65A3 25N120 0.8 1.Ö 6 3 3.5 3.5 50 56 60 500 48 60 75 14 14 25 ^2B 40 40 24 32 50 3.0 2750 2750 1500 , 17N100A IXGH 25N100A IXGM 25N100A (XGH 25N120A |> IXG H 22N50C 6 6 10 12 11 10.0 9.6 0.25 1.5
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OCR Scan
30N30 7N60B 40N60A 50N60A 7N60C 65A3 IXGA 12N60C 200n60 ixgh 28N30 4QN30 41N60 200N60

120n60b

Abstract: 32N50 -202 B2-196 B2-200 200 1000 1200 300 50 56 60 IXGH 25N120 IXGH 28N30A IXGH 28N30B IXGH 40N30A , IXGH 25N 100A IXGH 25N120A B2-188 B2-196 B2-200 IGBT with Fast Diode c_ T V 1.7 3.5 3.5 TO
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OCR Scan
40N30BD1 120n60b 32N50 IXGH50N50B IXGH24N50BU1 IXGH24N50B 40N30 2N100 8N100 6N100 12N10Q 12N1Q0

ixgh 1500

Abstract: 40N60A 17N100 IXGH 25N100 IXGH 25N120 IXGN 200N60 IXGH 24N50B IXGH 32NS0B IXGH 50N50B IXGP 10N60A IXGA 10N60A , 12N100A IXGH 17N100A IXGH 25N100A IXGH 25N120A IXGM 20N60 IXGM 30N60 IXGM 40N60 IXGM 17N100 IXGM 25N100
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OCR Scan
30N60A ixgh 1500 20n60a ixGh 40N60 a IXGH50N60AS 10N60 10N100 20N60A 24N60A 24N60B

40n80

Abstract: IXGH40N60 Insulated Gate Bipolar Transistors (IGBT) 4^ r /ioei fType Tjh = 150°C New IXGH 10N60 IXGH 20N60 IXGH 31N60 IXGH 30N60 IXGH 38N60 IXGH 40N60 IXGH 60N60 IXGH 10N100 IXGH 17N100 IXGH 25N100 IXGH 25N120 Vces V 600 lc · c VCE(sat) max. V 2.5 2.5 1.8 2.5 1.8 2.5 1.8 3.5 Cto. typ. pF 750 1500 1500 2800 2500 4500 4000 750 1500 2750 2750 typ. pP 30 40 40 70 70 60 100 30 40 50 50 cH H » D typ. 25°C max. K/W 1.25 0.83 0.83 0.62 0.62 0.50 0.50 1.20 0.83 0.62 0.62 1.25 1,25 thJC
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OCR Scan
40N80A 12N60U1 50N60AU1 40n80 IXGH40N60 20n60 igbt 10NTOA 24NB0A 30NMA 32N60A 32N60B

10n120

Abstract: 25n120 IGBT DRIVER SCHEMATIC 9.0 V 0.2 0 14 10N120 15N120 12 25N120 10 8.0 6.0 VCE = 400 V VCE = 500 V VCE , (RECOMMENDED) TJ = 25°C 60 25N120 r(t), EFFECTIVE TRANSIENT THERMAL RESISTANCE (NORMALIZED) IC
Motorola
Original
MHPM6B10N120 MHPM6B10N120SL 25A120 25n120 IGBT DRIVER SCHEMATIC IC IGBT 25N120 gate driver igbt 10N120 600VIc IC IGBT 25N120 gate driver data sheet MHPM6B10N120/D MHPM6B15N120 MHPM6B25N120 MHPM6B15N120SL

15n120

Abstract: IC IGBT 15N120 9.0 V 0.2 0 14 10N120 15N120 12 25N120 10 8.0 6.0 VCE = 400 V VCE = 500 V VCE , (RECOMMENDED) TJ = 25°C 60 25N120 r(t), EFFECTIVE TRANSIENT THERMAL RESISTANCE (NORMALIZED) IC
Motorola
Original
MHPM6B25N120SL MHPM6B10N120SS MHPM6B15N120SS MHPM6B25N120SS motorola 422-9 APPLICATION NOTE OF 15N120 IC IS 464B 10A120 15A120

40n80

Abstract: 13NB0 25N100 IXGH 25N100A IXGH 25N120 IXGH 25N120A IXGH 30N60 IXGH 30N60A IXGH 30N60AU1 IXGH 30N60U1 IXGH 31N60
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OCR Scan
DS117-12 DS1110-12 34-14N01 13NB0 dsei 20-12 33N120 DS117-12A VUO 35-12 N 0 7 19-06AS 2X30-04C 2X30-06C 2X30-12B 31-04C 31-06C

8n80

Abstract: DS117-12A 24N60AU1 IXGH 24N60AU1S IXGH 24N60B IXGH 24N60BU1 IXGH 25N100 IXGH 25N100A IXGH 25N120 IXGH 25N120A IXGH , 24N60AU1S IXSH 24N60U1 IXSH 24N60U1S IXSH 25N100 IXSH 25N100A IXSH 25N120A IXSH 25N120AU1 IXSH 30N60 IXSH
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OCR Scan
DSA117-12 55-16N07 60-08N03 60-16N03 60-18N03 62-16N07 8n80 36-18N 16go 2QN60 CS1011 CS1011-22 CS1011-25 CS1250-12 CS1250-14 CS1250-16

DSE 130 -06A

Abstract: vub 70-12 25N100 IXGH 25N100A IXGH 25N120 IXGH 25N120A IXGH 28N30 IXGH 28N30A IXGH 30N30 IXGH 30N60B IXGH 30N60BD1 , IXSH 24N60CD1 IXSH 24N60U1 IXSH 25N100 IXSH 25N120A IXSH 25N120AU1 IXSH 30N60AU1 IXSH 30N60B IXSH
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OCR Scan
DSE 130 -06A vub 70-12 IXGH 30n120 vub 70-16 80N10 12N60CD AXC-051 AXC-051-R AXC-102 AXV-002 60-06B 121-02A
Abstract: IXEH 25N120 IXEH 25N120D1 Advanced Technical Information NPT3 IGBT IC25 = 36 A = 1200 V VCES VCE(sat) typ. = 2.6 V C C G TO-247 AD G E G E IXEH 25N120 C IXEH 25N120D1 Symbol Conditions VCES TVJ = 25°C to 150°C Maximum Ratings 1200 tSC (SCSOA) TC = 25°C A 10 us W VCE = 900V; VGE = ±15 V; RG = 56 ; TVJ = 125°C non-repetitive , Clara CA 95054 Phone: (408) 982-0700, Fax: 408-496-0670 IXEH 25N120 IXEH 25N120D1 Diode [D1 -
OCR Scan
MGY25N 120/D MGY25N120/D

25N120

Abstract: Y25N120 IGBT, E-Series, improved NPT³ technology bondable VCES TVJM Short Circuit Proof solderable Type IC V 1200 IXED 15N120 IXED 25N120 IXED 50N120 IXED 75N120 IXED 100N120 IXED 150N120 1700 IXED 75N170 IXED 100N170 °C 150 A 20 25 50 75 100 150 75 100 VCEsat TVJ = 25°C 125°C typ. V typ. V 2.80 2.00 1.90 1.90 1.90 2.15 2.30 2.30 2.75 2.20 2.10 2.10 2.10 2.40 2.60 2.60 @IC A 20 25 50 75 100 150 75 100 Eoff Eon inductive load TVJ = 125°C mJ 2.8 3.4 6.7 10.0 12.0 21.0 25.0
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OCR Scan
Y25N120 transistor IR 324 C MGY25 MOY25N120
Abstract: 9.0 V 0.2 0 14 10N120 15N120 12 25N120 10 8.0 6.0 VCE = 400 V VCE = 500 V VCE , (RECOMMENDED) TJ = 25°C 60 25N120 r(t), EFFECTIVE TRANSIENT THERMAL RESISTANCE (NORMALIZED) IC -
OCR Scan
1QA120 10A12Q

25n120

Abstract: 2N2994 -202 B2-196 B2-200 200 1000 1200 300 50 56 60 IXGH 25N120 IXGH 28N30A IXGH 28N30B IXGH 40N30A
American Microsemiconductor
Original
2N2994
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