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| Part Number | Manufacturer | Description | |||||
| 1. |  25N120 |
IXYS Corporation | Low Vce(sat) High Speed IGBT | 45.83 Kb | 2 Pg. |
| « Previous 1 Next » |
| 1. |  45.83 Kb • 2 Pages |
Abstract: ... VCE(sat) IC = IC90, VGE = 15 V 25N120 3 V. 25N120A 4 V. IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 4 ... Labels: 25N120 |
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| 2. |  41.07 Kb • 2 Pages |
Abstract: ... 1 - 2 © 2003 IXYS All rights reserved. IXEH 25N120 IXEH 25N120D1. 324. Features. NPT3 IGBT - positive temperature coefficient of saturation voltage for easy paralleling - fast switching - short tail ... Labels: 25N120 |
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| 3. |  264.61 Kb • 10 Pages |
Abstract: ... 25N120. 15N120 10N120. 100 0. Qg, TOTAL GATE CHARGE (nC) 10. 16. VGE, GATE‐EMITTER VOLTAGE (VOLTS) 4 ... 25N120. 15N120. 10N120. 20. 30. 40. 50. 60. RESISTANCE (NORMALIZED) 1400. VGE = 15 V RG = RG(RECOMMENDED ... Labels: 25N120 |
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| 4. |  266.08 Kb • 10 Pages |
Abstract: ... 25N120. 15N120 10N120. 100 0. Qg, TOTAL GATE CHARGE (nC) 10. 16. VGE, GATE‐EMITTER VOLTAGE (VOLTS) 4 ... 25N120. 15N120. 10N120. 20. 30. 40. 50. 60. RESISTANCE (NORMALIZED) 1400. VGE = 15 V RG = RG(RECOMMENDED ... Labels: 25N120 |
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