NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
| Catalog Datasheet Results | Type | Document Tags |
| Abstract: TMOS V and TMOS EFET S CASE 221A06, Style 5 TO220AB MAXIMUM RATINGS (TC = 25°C unless , 6 Motorola TMOS Power MOSFET Transistor Device Data MTP50N06VL MTP50N06VL PACKAGE DIMENSIONS T B , TM Data Sheet MTP50N06VL MTP50N06VL TMOS V Power Field Effect Transistor Motorola Preferred Device , MOSFET Transistor Device Data 1 MTP50N06VL MTP50N06VL ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise , Recovery Stored Charge VSD Vdc ns uC INTERNAL PACKAGE INDUCTANCE Internal Drain Inductance ... | Original |
8 pages, |
TMOS E-FET MTP50N06VL AN569 MTP50N06VL/D MTP50N06VL/D abstract |
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| Abstract: AMPERES 100 VOLTS RDS(on) = 0.22 OHMS ® D G S CASE 221A06, Style 5 TO220AB MAXIMUM , Logic Level TMOS E-FET.TM Power Field Effect Transistor Designer's MTP10N10EL MTP10N10EL Motorola Preferred , Power MOSFET Transistor Device Data 1 MTP10N10EL MTP10N10EL ELECTRICAL CHARACTERISTICS (TJ = 25°C unless , , dIS/dt = 100 A/us) Reverse Recovery Stored Charge VSD Vdc ns uC INTERNAL PACKAGE INDUCTANCE Internal Drain Inductance (Measured from the drain lead 0.25 from package to center of die ... | Original |
8 pages, |
MTP10N10EL AN569 539 MOTOROLA transistor MTP10N10EL/D MTP10N10EL/D abstract |
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| Abstract: TMOS V and TMOS EFET S CASE 221A06, Style 5 TO220AB MAXIMUM RATINGS (TC = 25°C unless , Power MOSFET Transistor Device Data MTP36N06V MTP36N06V PACKAGE DIMENSIONS T B NOTES: 1. , Data Sheet MTP36N06V MTP36N06V TMOS V Power Field Effect Transistor Motorola Preferred Device , and best overall value. REV 2 © Motorola TMOS Motorola, Inc. 1996 Power MOSFET Transistor , Recovery Stored Charge VSD Vdc ns uC INTERNAL PACKAGE INDUCTANCE Internal Drain Inductance ... | Original |
8 pages, |
MTP36N06V AN569 MTP36N06V/D MTP36N06V/D abstract |
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| Abstract: NChannel D G CASE 221A06, Style 5 TO220AB S MAXIMUM RATINGS (TC = 25°C unless otherwise noted , Reverse Recovery Waveform 6 Motorola TMOS Power MOSFET Transistor Device Data MTP40N10E MTP40N10E PACKAGE , Sheet MTP40N10E MTP40N10E TMOS E-FET.TM Power Field Effect Transistor NChannel EnhancementMode Silicon , Power MOSFET Transistor Device Data 1 MTP40N10E MTP40N10E ELECTRICAL CHARACTERISTICS (TJ = 25°C unless , Vdc ns uC INTERNAL PACKAGE INDUCTANCE Internal Drain Inductance (Measured from contact ... | Original |
8 pages, |
MTP40N10E AN569 ad 152 transistor MTP40N10E/D MTP40N10E/D abstract |
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| Abstract: and TMOS EFET S CASE 221A06, Style 5 TO220AB MAXIMUM RATINGS (TC = 25°C unless otherwise , VTM MTP15N06VL MTP15N06VL Designer's TMOS Power Field Effect Transistor NChannel EnhancementMode , REV 1 © Motorola TMOS Motorola, Inc. 1996 Power MOSFET Transistor Device Data 1 , INTERNAL PACKAGE INDUCTANCE Internal Drain Inductance (Measured from contact screw on tab to center of die.) (Measured from the drain lead 0.25 from package to center of die) LD Internal Source ... | Original |
8 pages, |
TMOS E-FET MTP15N06VL AN569 MTP15N06VL/D MTP15N06VL/D abstract |
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| Abstract: TMOS V and TMOS EFET S CASE 221A06, Style 5 TO220AB MAXIMUM RATINGS (TC = 25°C unless , VTM MTP52N06VL MTP52N06VL Designer's TMOS Power Field Effect Transistor Motorola Preferred Device , © Motorola TMOS Motorola, Inc. 1996 Power MOSFET Transistor Device Data 1 MTP52N06VL MTP52N06VL ELECTRICAL , Charge VSD Vdc ns uC INTERNAL PACKAGE INDUCTANCE Internal Drain Inductance (Measured from contact screw on tab to center of die) (Measured from the drain lead 0.25 from package to center ... | Original |
8 pages, |
TMOS E-FET MTP52N06VL AN569 MTP52N06VL/D MTP52N06VL/D abstract |
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| Abstract: Temperature D G CASE 221A06, Style 5 TO220AB S MAXIMUM RATINGS (TC = 25°C unless otherwise , 6 Motorola TMOS Power MOSFET Transistor Device Data MTP1N50E MTP1N50E PACKAGE DIMENSIONS T B , TMOS E-FET.TM Power Field Effect Transistor Designer's MTP1N50E MTP1N50E Motorola Preferred Device , Motorola, Inc. 1995 Power MOSFET Transistor Device Data 1 MTP1N50E MTP1N50E ELECTRICAL CHARACTERISTICS , INTERNAL PACKAGE INDUCTANCE Internal Drain Inductance (Measured from contact screw on tab to center of ... | Original |
8 pages, |
MTP1N50E AN569 MTP1N50E/D MTP1N50E/D abstract |
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| Abstract: RDS(on) = 0.70 OHMS ® D G S CASE 221A06, Style 5 TO220AB MAXIMUM RATINGS (TC = 25°C , Transistor Device Data MTP7N20E MTP7N20E PACKAGE DIMENSIONS T B NOTES: 1. DIMENSIONING AND TOLERANCING , TMOS E-FET.TM Power Field Effect Transistor Designer's MTP7N20E MTP7N20E Motorola Preferred Device , Transistor Device Data 1 MTP7N20E MTP7N20E ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted , PACKAGE INDUCTANCE Internal Drain Inductance (Measured from contact screw on tab to center of die ... | Original |
8 pages, |
MTP7N20E AN569 MTP7N20E/D MTP7N20E/D abstract |
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| Abstract: Temperature D G CASE 221A06, Style 5 TO220AB S MAXIMUM RATINGS (TC = 25°C unless otherwise , Motorola TMOS Power MOSFET Transistor Device Data MTP1N60E MTP1N60E PACKAGE DIMENSIONS T B NOTES: 1. , TMOS E-FET.TM Power Field Effect Transistor Designer's MTP1N60E MTP1N60E Motorola Preferred Device , REV 1 © Motorola TMOS Motorola, Inc. 1995 Power MOSFET Transistor Device Data 1 MTP1N60E MTP1N60E , PACKAGE INDUCTANCE Internal Drain Inductance (Measured from contact screw on tab to center of die ... | Original |
8 pages, |
MTP1N60E AN569 MTP1N60E/D MTP1N60E/D abstract |
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| Abstract: Energy Specified D G CASE 221A06, Style 5 TO220AB S MAXIMUM RATINGS (TC = 25°C unless , Transistor Device Data MTP75N05HD MTP75N05HD PACKAGE DIMENSIONS T B NOTES: 1. DIMENSIONING AND , HDTMOS E-FET TM Power Field Effect Transistor Designer's MTP75N05HD MTP75N05HD Motorola Preferred Device , REV 2 ©Motorola TMOS Power MOSFET Transistor Device Data Motorola, Inc. 1995 1 MTP75N05HD MTP75N05HD , uC INTERNAL PACKAGE INDUCTANCE Internal Drain Inductance (Measured from contact screw on tab to ... | Original |
8 pages, |
MTP75N05HD AN569 MTP75N05HD/D MTP75N05HD/D abstract |
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