NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
| Catalog Datasheet Results | Type | Document Tags |
| Abstract: DRAM module organized as 1 048 576 words by 64-bit in a 168-pin, dual read-out, single-in-line package ... | Original |
9 pages, |
74ABT244 641010GS-60/-70 641020GS-60/-70 641010GS-60/-70 abstract |
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| Abstract: EDI4G649EV EDI4G649EV 8 Megx64 High Density DRAM DIMM 8 Megx64 High Density DRAM DIMM Features The EDI4G649EV EDI4G649EV is an industry standard 168-Pin 8-byte Dual In-Line Memory Module (DIMM) which is configured as an 8 Meg x 64. The module is well suited for applications requiring large memory arrays. The on-DIMM buffering of selected input signals provides improved system performance. Both the DATA and RAS signals are not buffered, which preserves the DRAM access specification. The EDI4G649EV EDI4G649EV is assembled ... | Original |
13 pages, |
EDI4G649EV EDI4G649EV6D EDI4G649EV abstract |
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| Abstract: 168-pin DIMM 4.250 Note 1.000 max. 0.250 3.984 0.125 Dia. 72 0.050 0.080 0.400 ... | Original |
7 pages, |
MB811 ESA8UN324 ESA8UN324 abstract |
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| Abstract: September 1996 Revision 1.0 DATA SHEET EDC1UV641 EDC1UV641(1/4)-(60/70)(J/T)G-S 8MByte (1M x 64) CMOS EDO DRAM Module - 3.3V General Description The EDC1UV641 EDC1UV641(1/4)-(60/70)(J/T)G-S is a high performance, EDO (Extended Data Out) 8-megabyte dynamic RAM module organized as 1M words by 64 bits, in a 168-pins, dual-in-line (DIMM) memory modules. The module utilizes four, Fujitsu MB81V1 MB81V1(8/6)165A-(60/70) (PJ/FN) CMOS , * pulse width in fast page mode cycles. Physical Dimensions 168-pin (84X2) DIMM 5.250 Note ... | Original |
8 pages, |
EDC1UV641 EDC1UV641 abstract |
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| Abstract: September 1996 Revision 1.0 DATA SHEET EDC2UV641 EDC2UV641(1/4)-(60/70)(J/T)G-S 16MByte (2M x 64) CMOS EDO DRAM Module - 3.3V General Description The EDC2UV641 EDC2UV641(1/4)-(60/70)(J/T)G-S is a high performance, EDO (Extended Data Out) 16-megabyte dynamic RAM module organized as 2M words by 64 bits, in a 168-pins, dual-in-line (DIMM) memory modules. The module utilizes eight, Fujitsu MB81V1 MB81V1(8/6)165A-(60/70 , tRASC defines RAS* pulse width in fast page mode cycles. Physical Dimensions 168-pin (84x2) DIMM ... | Original |
8 pages, |
EDC2UV641 EDC2UV641 abstract |
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| Abstract: 400mil 54pin package and one 2Kbit EEPROM in 8pin TSSOP(TSOP) package on a 168pin glassepoxy printed circuit board. The A-Data is a Dual In-line Memory Module and is intended for mounting onto 168-pins ... | Original |
10 pages, |
B6986RAB ADABC1608 ADABC1608 abstract |
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| Abstract: Support for: - Two 168-pin unbuffered DIMMs - Up to 16 simultaneously open banks - 16-byte reads (burst ... | Original |
5 pages, |
MPU-401 datasheet abstract |
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| Abstract: 400mil 54pin package and one 2Kbit EEPROM in 8pin TSSOP(TSOP) package on a 168pin glassepoxy printed circuit board. The A-Data is a Dual In-line Memory Module and is intended for mounting onto 168-pins ... | Original |
10 pages, |
ADABC1808 ADABC1808 abstract |
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| Abstract: SERIAL PRESENCE DETECT PC100 PC100 Unbuffered DIMM PC100 PC100 Unbuffered DIMM(168pin) SPD Specification(128Mb C-die base) Rev. 0.1 Apr. 2000 Rev 0.1 Apr. 2000 SERIAL PRESENCE DETECT PC100 PC100 Unbuffered DIMM M366S1724CT0-C1H/C1L M366S1724CT0-C1H/C1L · Organization : 16Mx64 · Composition : 8Mx16 *8 · Used component part # : K4S281632C-TC1H/C1L K4S281632C-TC1H/C1L · # of rows in module : 2 Rows · # of banks in component : 4 banks · Feature : 1,375mil height & double sided component · Refresh : 4K/64ms · Contents ; Byte # Function ... | Original |
7 pages, |
M374S3323CT0-C1H samsung dimm 128mb pc100 32mx64 PC100 PC100 abstract |
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| Abstract: 8 M Byte DRAM module organized as 1 048 576 words by 72-bit in a 168-pin, dual read-out ... | Original |
9 pages, |
Q67100-Q2004 74ABT244 721000GS-60/-70 721000GS-60/-70 abstract |
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| Abstract: 32Mx64bits PC100 PC100 SDRAM Unbuffered DIMM based on 32Mx8 SDRAM with LVTTL, 4 banks & 8K Refresh HYM72V32656AT6 HYM72V32656AT6 Series DESCRIPTION The Hyundai HYM72V32656AT8 HYM72V32656AT8 Series are 32Mx64bits Synchronous DRAM Modules. The modules are composed of eight 32Mx8bits CMOS Synchronous DRAMs in 400mil 54pin TSOP-II package, one 2Kbit EEPROM in 8pin TSSOP package on a 168pin glass-epoxy printed circuit board. One 0.22uF and , · 168-Pin Unbuffered DIMM with Single Sided · One 0.33uF and one 0.1uF decoupling capacitors ... | Original |
14 pages, |
81Eh PC100 HYM72V32656AT6 PC100 abstract |
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| Abstract: V437432E24V V437432E24V 3.3 VOLT 32M x 72 HIGH PERFORMANCE REGISTERED SDRAM ECC MODULE PRELIMINARY CILETIV LESOM Features Description s 168 Pin Registered ECC 33,554,432 x 72 bit Oganization SDRAM Modules s Utilizes High Performance 32M x 8 SDRAM in TSOPII-54 TSOPII-54 Packages s Fully PC Board Layout Compatible to INTEL'S Rev 1.0 Module Specification s Single +3.3V (± 0.3V) Power Supply s Programmable CAS Latency, Burst Length, and Wrap Sequence (Sequential & Interleave) s Auto Refresh (CBR) ... | Original |
13 pages, |
V437432E24VXTG-75PC V437432E24VXTG-75 V437432E24VXTG-10PC V437432E24V V437432E24V abstract |
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| Abstract: PRELIMINARY V437216C04VDTG-10PC V437216C04VDTG-10PC 3.3 VOLT 16M x 72 HIGH PERFORMANCE PC100 PC100 REGISTER PLL ECC SDRAM MODULE MOSEL VITELIC Features Description I 168 Pin Registered ECC 16,777,216 x 72 bit Oganization SDRAM Modules I Utilizes High Performance 16M x 4 SDRAM in TSOPII-54 TSOPII-54 Packages I Fully PC Board Layout Compatible to INTEL'S Rev 1.2 Module Specification I Single +3.3V (± 0.3V) Power Supply I Programmable CAS Latency, Burst Length, and Wrap Sequence (Sequential & Interleave) I ... | Original |
12 pages, |
V437216C04VDTG-10PC PC100 V437216C04VDTG-10PC abstract |
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| Abstract: V436516S04VATG-75PC V436516S04VATG-75PC 3.3 VOLT 16M x 64 HIGH PERFORMANCE PC133 PC133 UNBUFFERED SDRAM MODULE PRELIMINARY CILETIV LESOM Features Description s 168 Pin Unbuffered 16,777,216 x 64 bit Oganization SDRAM DIMM s Utilizes High Performance 128 Mbit, 16M x 8 SDRAM in TSOPII-54 TSOPII-54 Packages s Fully PC Board Layout Compatible to INTEL'S Rev 1.0 Module Specification s Single +3.3V (± 0.3V) Power Supply s Programmable CAS Latency, Burst Length, and Wrap Sequence (Sequential & Interleave) s Auto R ... | Original |
12 pages, |
V436516S04VATG-75PC pc133u-222-542 PC133U pc133u-222-542-a PC133 V436516S04VATG-75PC abstract |
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| Abstract: V436632S24V V436632S24V 3.3 VOLT 32M x 64 HIGH PERFORMANCE PC133 PC133 UNBUFFERED SDRAM MODULE PRELIMINARY CILETIV LESOM Features Description s 168 Pin Unbuffered 33,554,432 x 64 bit Oganization SDRAM Modules s Utilizes High Performance 32M x 8 SDRAM in TSOPII-54 TSOPII-54 Packages s Fully PC Board Layout Compatible to INTEL'S Rev 1.0 Module Specification s Single +3.3V (± 0.3V) Power Supply s Programmable CAS Latency, Burst Length, and Wrap Sequence (Sequential & Interleave) s Auto Refresh (CBR) an ... | Original |
12 pages, |
V436632S24VXTG-75PC V436632S24VXTG-75 V436632S24VXTG-10PC V436632S24V PC133 V436632S24V abstract |
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| Abstract: PRELIMINARY V43644R04V V43644R04V(C)TG-10PC TG-10PC 3.3 VOLT 4M x 64 HIGH PERFORMANCE PC100 PC100 UNBUFFERED SDRAM MODULE MOSEL VITELIC Features Description s 168 Pin Unbuffered 4,194,304 x 64 bit Oganization SDRAM Modules s Utilizes High Performance 4M x 16 SDRAM in TSOPII-54 TSOPII-54 Packages s Fully PC Board Layout Compatible to INTEL'S Rev 1.0 Module Specification s Single +3.3V (± 0.3V) Power Supply s Programmable CAS Latency, Burst Length, and Wrap Sequence (Sequential & Interleave) s Auto Refresh ... | Original |
11 pages, |
620 tg diode V43644R04VCTG-10PC V43644R04V TG-10PC PC100 V43644R04V abstract |
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| Abstract: V437332S04V V437332S04V 3.3 VOLT 32M x 72 HIGH PERFORMANCE UNBUFFERED ECC SDRAM MODULE PRELIMINARY CILETIV LESOM Features Description s 168 Pin Unbuffered 33,554,432 x 72 bit Oganization SDRAM Modules s Utilizes High Performance 128Mbit, 16M x 8 SDRAM in TSOPII-54 TSOPII-54 Packages s Fully PC Board Layout Compatible to INTEL'S Rev 1.0 Module Specification s Single +3.3V (± 0.3V) Power Supply s Programmable CAS Latency, Burst Length, and Wrap Sequence (Sequential & Interleave) s Auto Refresh ( ... | Original |
12 pages, |
V437332S04VXTG-75PC V437332S04VXTG-75 V437332S04VXTG-10PC V437332S04V V437332S04V abstract |
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| Abstract: PRELIMINARY MT4LD(T)164A (X), MT8LD264A MT8LD264A (X), MT16LD464A MT16LD464A (X) 1, 2, 4 MEG x 64 DRAM MODULES TECHNOLOGY, INC. 1, 2, 4 MEG x 64 DRAM MODULE 8, 16, 32 MEGABYTE, NONBUFFERED, 3.3V, EDO OR FAST PAGE MODE FEATURES · · · · · · · · · · PIN ASSIGNMENT (Front View) 168-Pin DIMM 168-pin, dual-in-line memory module (DIMM) Nonbuffered High-performance CMOS silicon-gate process , Timing 60ns access 70ns access · Components SOJ TSOP (1 Meg x 64 only) · Packages 168-pin DIMM ... | Original |
34 pages, |
MT8LD264A MT16LD464A MT8LD264A abstract |
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| Abstract: M372V0405DT0-C M372V0405DT0-C DRAM MODULE M372V0405DT0-C M372V0405DT0-C Fast Page Mode 4M x 72 DRAM DIMM with ECC Using 4Mx16 & 4Mx4 , 4K Refresh, 3.3V GENERAL DESCRIPTION FEATURES The Samsung M372V0405DT0-C M372V0405DT0-C is a 4Mx72bits Dynamic RAM high density memory module. The Samsung M372V0405DT0-C M372V0405DT0-C consists of four 4Mx16bits & two 4Mx4bits CMOS DRAMs in TSOP-II 400mil packages and two 16 bits driver IC in TSSOP package mounted on a 168-pin glassepoxy substrate. A 0.1 or 0.22uF decoupling capacitor is mounted on the printed ... | Original |
19 pages, |
M372V0405DT0-C M372V0405DT0-C abstract |
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| Abstract: clock and one 2K EEPROM in 8-pin TSSOP package for Serial Presence Detect on a 168pin glass-epoxy , into 168-pin edge connector sockets. Synchronous design allows precise cycle control with the use of ... | Original |
10 pages, |
M377S3253BT3-C1L M377S3253BT3-C1H M377S3253BT3 PC100 M377S3253BT3 abstract |
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