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247TM

Catalog Datasheet MFG & Type PDF Document Tags

2a smd

Abstract: "thermal via" PCB D2PAK (table 1). The Super-220 and SMD-247TM are each with available either with long straight leads suitable , device is an IRFP450-S SMD-247TM. Rth j-a for IRFP450-S mounted: Board Material In free air , used. 250 Temperature / C 200 Solder Melting Point SMD-247TM 150 100 50 0 0 50 100 150 200 250 300 350 Time / s Fig.1 Typical reflow profile for SMD-247TM , -1023 Appendix 1b Super-220TM minimum footprint Application Note AN-1023 Appendix 2a SMD-247TM Outline
International Rectifier
Original
SMD-247TM AN-994 2a smd IRFP450S conveyer belt 247T

K 545

Abstract: K 54502DC1BE4-EE9A-CA45-A06A-97C9C8D484E3/websocket?url=http://www.datasheetarchive.com/pdf/download High Voltage IGBT with Diode PLUS 247TM package IXSX35N120AU1 IXSX35N120AU1S V I CES C25 VCE(SAT) 1200 V 70 A 4V Short Circuit SOA Capability PLUS 247TM SMD (IXSX35N120AU1S , 22 £2, non repetitive T, = 25°C IGBT Diode PLUS 247TM (IXSX35N120AU1 ) w w "C °C °C °C , 247TM Outline A3 - h r - S TT| fi I »u Pulse test, t IC , for VC E (Clamp) > 0 . 8 · V CES, higher T j or increased R s PLUS 247TM SMD Outline a thJC p
-
OCR Scan
K 545 35N120AU1 35N12QAU1S 1XSX35W120AU1S

60N120

Abstract: D-68623 Advanced Technical Information IXER 60N120 IC25 NPT3 IGBT VCES VCE(sat) typ. in ISOPLUS 247TM = 95 A = 1200 V = 2.1 V ISOPLUS 247TM E153432 C G G C E Isolated Backside* E G = Gate C = Collector E = Emitter *Patent pending Features IGBT Symbol Conditions VCES Maximum Ratings TVJ = 25°C to 150°C 1200 ± 20 VGE = ±15 V; RG = 22 ; TVJ = , switching - short tail current for optimized performance in resonant circuits · ISOPLUS 247TM package -
IXYS
Original
D-68623 V9560 60n12 induction heat resonant
Abstract: V ±100 nA TJ = 125°C 100 µA 2 mA 320 mâ"¦ PLUS 247TM (IXFX) G (TAB) D TO , lighting controls Advantages PLUS 247TM package for clip or spring mounting Space savings High power , Note 1 20 Coss VGS = 0 V, VDS = 25 V, f = 1 MHz S 7600 Ciss 27 PLUS 247TM IXYS
Original
27N80Q 728B1

60N120

Abstract: IXER60N120 IXER 60N120 NPT3 IGBT IC25 = 95 A = 1200 V VCES VCE(sat) typ. = 2.1 V in ISOPLUS 247TM ISOPLUS 247TM E153432 C G G C E Isolated Backside E G = Gate t Conditions Maximum Ratings VCES TVJ = 25°C to 150°C u Symbol 1200 V -o V ± 20 VGES IC25 IC90 TC = 25°C TC = 90°C ICM VCEK VGE = ±15 V; RG = 22 ; TVJ = 125°C RBSOA, Clamped inductive , short tail current for optimized performance in resonant circuits · ISOPLUS 247TM package -
IXYS
Original
IXER60N120 80E10 20600t igbt for induction heating ic IXER 60N120

100N25

Abstract: ID104 °C TJM Tstg 150 -55 . +150 °C °C 300 °C PLUS 247TM (IXFX) = 25°C (MOSFET , controls ±200 nA TJ = 25°C TJ = 125°C 100 µA 2 mA 27 m Advantages PLUS 247TM package for clip , Coss VGS = 0 V, VDS = 25 V, f = 1 MHz S 9100 Ciss 70 PLUS 247TM Outline tr VGS
IXYS
Original
100N25 ID104

10N100F

Abstract: 10n100 12N100 10N100 © 2002 IXYS All rights reserved ISOPLUS 247TM (IXFR) mJ J 5 TC = 25°C V , industrial applications Pulse generation Laser drivers RF amplifiers Advantages ISOPLUS 247TM package , S 2700 Ciss 8 PLUS 247TM Outline pF 305 pF Crss 93 pF td(on) 12
IXYS
Original
10N100F 98934 ISOPLUS247TM 12N100F IXFR10N100 IXFR12N100

27n80q

Abstract: HiPerFETTM Power MOSFETs Q-CLASS Single MOSFET Die IXFK 27N80Q IXFR 27N80Q IXFX 27N80Q VDSS ID25 RDS(on) = 800 V = 27 A = 300 mW trr £ 250 ns PLUS 247TM (IXFX) N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dV/dt, Low trr G (TAB) D Symbol VDSS VDGR VGS VGSM ID25 IDM , Nm/lb.in. 6 10 g g TO-264 AA (IXFK) G D S (TAB) ISOPLUS 247TM (IXFR) E153432 G D , controls Advantages · PLUS 247TM package for clip or spring mounting · Space savings · High power density
IXYS
Original
247/ISOPLUS PLUS247TM

16N90

Abstract: IXFH16N90 TJ -55 . +150 °C TJM Tstg 150 -55 . +150 °C °C (TAB) PLUS 247TM (IXFX , (PLUS 247TM) Space savings High power density 97547(2/98) IXFH 16N90 IXFX 16N90 Symbol , V t rr QRM IRM TJ = 25°C TJ = 125°C I F = IS -di/dt = 100 A/µs, VR = 100 V PLUS 247TM
IXYS
Original
IXFH16N90 IXFX16N90

24n100f

Abstract: Advance Technical Information HiPerRFTM Power MOSFETs F-Class: MegaHertz Switching IXFX 24N100F VDSS = 1000 V IXFK 24N100F ID25 = 24 A RDS(on) = 0.39 trr 250 ns N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic Rg High dV/dt, Low trr PLUS 247TM (IXFX) Symbol , choppers Pulse generation Laser drivers Advantages 100 µA 3 mA l 0.39 l l PLUS 247TM , PLUS 247TM Outline tr VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 18 ns td(off) RG = 1
IXYS
Original
Abstract: . +150 V V V V A A A A mJ J V/ns W °C °C °C °C Nm/lb.in. 6 10 g g PLUS 247TM G D D (TAB , relays Advantages l PLUS 247TM package for clip or spring mounting l Space savings l High power density , Drain (Collector) PLUS 247TM Outline gfs Ciss Coss Crss td(on) tr td(off) tf Qg(on) Qgs Qgd RthJC IXYS
Original
180N07

GA400GD25S

Abstract: ir2184 circuit -247AC TO-247AC TO-247AC Super-247TM Super-247TM Super-247TM Super-247TM TO-247AC TO-247AC TO-247AC TO-247AC TO-247AC TO-247AC TO-247AC TO-247AC Super-247TM Super-247TM Discrete Discrete CoPack Discrete , * Represents die capability Super-220 D2Pak TO-220 TO-262 D2Pak TO-220 TO-262 TO-247 Super-247TM D2Pak TO-220 TO-262 Super-247TM D2Pak TO-220 TO-247 40 40 40 40 55 55 55 75 100 100 100 100 150 150 150 150
International Rectifier
Original
IRFP3415 GA400GD25S ir2184 circuit IRG4BC30KD-S IR211X DC MOTOR DRIVE IR2127 GA250 IR2108 IR2108S IR21084 IR21084S IR2109 IR2109S
Abstract: -55 . +150 °C TJM Tstg 150 -55 . +150 °C °C 300 °C PLUS 247TM = 25 , l PLUS 247TM package for clip or spring mounting l Space savings l High power density , ), 40 PLUS 247TM Outline 55 ns 100 ns 40 ns 360 nC 60 nC 180 nC IXYS
Original
90N30 125OC

44n55q

Abstract: Advance Technical Information IXFK 44N55Q IXFX 44N55Q HiPerFETTM Power MOSFETs VDSS ID25 RDS(on) Q-CLASS 550 V 44 A 120 m trr 250 ns Single MOSFET Die N-Channel Enhancement Mode Avalanche Rated, Low Qg High dV/dt, Low trr Symbol = = = PLUS 247TM (IXFX) Test , l Temperature and lighting controls Advantages PLUS 247TM package for clip or spring mounting l , Coss VGS = 0 V, VDS = 25 V, f = 1 MHz S 6400 Ciss 45 PLUS 247TM Outline tr VGS
IXYS
Original
Abstract: IXFX 73N30Q IXFK 73N30Q Q-CLASS VDSS = 300 V ID25 = 73 A RDS(on) = 42 m Single MOSFET Die trr 250 µs HiPerFETTM Power MOSFETs N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dV/dt, Low trr PLUS 247TM (IXFX) Preliminary data sheet Symbol Test Conditions Maximum , lighting controls Advantages PLUS 247TM package for clip or spring mounting l Space savings l High , V, VDS = 25 V, f = 1 MHz S 6400 Ciss 47 PLUS 247TM Outline tr VGS = 10 V, VDS = IXYS
Original
Abstract: °C °C Nm/lb.in. 6 10 g g PLUS 247TM (IXFX) G D (TAB) TO-264 AA (IXFK) G D , motor control l Temperature and lighting controls Advantages PLUS 247TM package for clip or spring , (Collector) 3 - Source (Emitter) 4 - Drain (Collector) PLUS 247TM Outline gfs Ciss Coss Crss td(on) tr IXYS
Original
44N60

100N25

Abstract: g PLUS 247TM (IXFX) G D (TAB) TO-264 AA (IXFK) TC = 25°C TC = 25°C IS IDM, di/dt , controls Advantages PLUS 247TM package for clip or spring mounting l Space savings l High power density l , Drain (Collector) PLUS 247TM Outline gfs Ciss Coss Crss td(on) tr td(off) tf Qg(on) Qgs Qgd RthJC
IXYS
Original
Abstract: PLUS 247TM (IXFK) G D (TAB) TO-264 AA (IXFK) G D (TAB) S G = Gate S = Source , control l Temperature and lighting controls Advantages PLUS 247TM package for clip or spring mounting l , ) 3 - Source (Emitter) 4 - Drain (Collector) PLUS 247TM Outline gfs Ciss Coss Crss td(on) tr td IXYS
Original
48N55
Abstract: . +150 150 -55 . +150 300 V V D (TAB) PLUS 247TM (IXFX) V V A A A mJ J V/ns W °C °C °C °C , and lighting controls Advantages l l l PLUS 247TM package for clip or spring mounting Space , 247TM Outline gfs Ciss Coss Crss td(on) tr td(off) tf Qg(on) Qgs Qgd RthJC RthCK V DS = 10 V; ID = IXYS
Original

44N60

Abstract: 300 1.13/10 6 V V V V A A A mJ J V/ns W °C °C °C °C Nm/lb.in. g PLUS 247TM (IXFX) G D (TAB) D , Temperature and lighting controls Advantages l l l PLUS 247TM package for clip or spring mounting , (Collector) 3 - Source (Emitter) 4 - Drain (Collector) PLUS 247TM Outline gfs Ciss Coss Crss td(on) tr
IXYS
Original

12N60c equivalent

Abstract: 13N50 equivalent Packages IS O P LU S 247TM is th e D C B is o la te d version o f th e P L U S 247TM -package (TO 2 4 7 w , pressu re force over th e w hole lifetim e o f th e assem bly. Parts in the IS O P LU S 247TM housing can , p s u la te d in T O -2 4 7 , T O -2 6 4 and P LU S 247TM housings can be m o lded in th e IS O P LU S 247TM . T h e re are a lready m ore than 100 diffe re nt ISO P LU S247TM ty p e s a vailable. A n , 180N 10 IS O P LU S 247TM P LU S 2 4 7 TM Internal DCB 0 .30 0 .22 K/W 0.15 1 .0 2 Total K/W 0
-
OCR Scan
12N60c equivalent 13N50 equivalent equivalent of IGBT 12N60C motor IG 2200 19 ixlf 19n250a 004II ISOPLUS220TM US247TM 10-06SC 16-06SC 22-06N1 30-12N1

60-02A

Abstract: ISOPLUS weight -247AC TO-247AC TO-247AC Super-247TM Super-247TM Super-247TM Super-247TM TO-247AC TO-247AC TO-247AC TO-247AC TO-247AC TO-247AC TO-247AC TO-247AC Super-247TM Super-247TM Discrete Discrete CoPack Discrete , * Represents die capability Super-220 D2Pak TO-220 TO-262 D2Pak TO-220 TO-262 TO-247 Super-247TM D2Pak TO-220 TO-262 Super-247TM D2Pak TO-220 TO-247 40 40 40 40 55 55 55 75 100 100 100 100 150 150 150 150
IXYS
Original
60-02A ISOPLUS weight TO-247 AD DIODE Ifavm 30 A isoplus
Abstract: 12N100 10N100 © 2002 IXYS All rights reserved ISOPLUS 247TM (IXFR) mJ J 5 TC = 25°C V , industrial applications Pulse generation Laser drivers RF amplifiers Advantages ISOPLUS 247TM package , S 2700 Ciss 8 PLUS 247TM Outline pF 305 pF Crss 93 pF td(on) 12 IXYS
Original
25-12AT 25-16AT 25-16AR DSP25

25-16AR

Abstract: 25-12A °C TJM Tstg 150 -55 . +150 °C °C 300 °C PLUS 247TM (IXFX) = 25°C (MOSFET , controls ±200 nA TJ = 25°C TJ = 125°C 100 µA 2 mA 27 m Advantages PLUS 247TM package for clip , Coss VGS = 0 V, VDS = 25 V, f = 1 MHz S 9100 Ciss 70 PLUS 247TM Outline tr VGS
IXYS
Original
25-12A

125OC

Abstract: 25N90 Advance Technical Information HiPerRFTM Power MOSFETs F-Class: MegaHertz Switching IXFX 24N100F VDSS = 1000 V IXFK 24N100F ID25 = 24 A RDS(on) = 0.39 trr 250 ns N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic Rg High dV/dt, Low trr PLUS 247TM (IXFX) Symbol , choppers Pulse generation Laser drivers Advantages 100 µA 3 mA l 0.39 l l PLUS 247TM , PLUS 247TM Outline tr VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 18 ns td(off) RG = 1
IXYS
Original
26N90 25N90
Abstract: improved noise immunity . Trr typ. ID 170ns 34A Super-247TM Absolute Maximum Ratings , N-Channel HEXFET® Power MOSFETs www.irf.com 7 IRFPS35N50L Super-247TM (TO-274AA) Package Outline , 1 - GATE 2 - COLLECTOR 3 - EMITTER 4 - COLLECTOR Super-247TM (TO-274AA)Part Marking , WW = WEEK Super TO-247TM package is not recommended for Surface Mount Application. Data and IXYS
Original
123B1 065B1
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