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NVA4001NT1G ON Semiconductor Small Signal MOSFET 20V 238mA 1.5 Ohm Single N-Channel SC-75 with ESD Protection MOSFET 20V 238mA 1.5 Ohm Single N-Channel SC-75 with ESD Protection, SC-75 (SOT-416) 3 LEAD, 3000-REEL visit Digikey Buy
NTA4001NT1G ON Semiconductor Small Signal MOSFET 20V 238mA 1.5 Ohm Single N-Channel SC-75 with ESD Protection, SC-75 (SOT-416) 3 LEAD, 3000-REEL visit Digikey Buy

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238mA

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: =11.3mA 9.6 2 AM-1.5,100mW/cm ,Vop=4.6V, Iop=23.8mA Topr -1060 Tstg -2070 -
Original
AM-8705 O2908HKIM 8705 NOA1306 A1306 A1306-1/2 A1306-2/2
Abstract: × 41.3 4.1 AM-8704 (3.9V- 23.8mA) 97mW (4.6V- 21.0mA) (3.9V- 10.7mA) 46mW (4.6V- 9.9mA) 41.2× 41.3 4.6 AM-8705 (3.9V- 26.9mA) 109mW (4.6V- 23.8mA) (3.9V- 12.1mA SANYO Electric
Original
AM-1456 AM-1411 AM-1437 AM-1417 AM-1424 AM-1513 AT7S64 AM-5907 FL200Lux AM-1815 FL-200L FL-50L AM-1407
Abstract: ) 667mA 555mA 416mA 333mA 277mA 238mA 208mA 185mA 1666mA 1333mA 1111mA 833mA 666mA Beijing Chuang Si Fang Electronic
Original
SL5-06B SL20-01B SL10-01 SL2501 SL501B sl501 sl2.502 SL20 LI018V1/2002 1000MO 6KV/50 UL94-V 5VA-10VA-20VA-30VA 5-05B
Abstract: 230V @238mA @208mA @179mA @43mA 21V 24V 28V 115V @476mA @416mA @358mA @86mA TL39X , 42V 48V 56V 230V @238mA @208mA @179mA @43mA 21V 24V 28V 115V @476mA @416mA @358mA DB Lectro
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transformer 230V to 12V 500mA transformer 230V 12V 500mA transformer 230v to 9v 300mA Transformer 115V 24V 10va transformer 500mA 12v 9v 300mA transformer 3750V 50/60H UL506 TUV/EN61558 EN60950 TL29E
Abstract: , Output Current IO=0.5A Ipk = 238mA Efficiency 75% Step 2: Design Transformer Settings , Ipk=238mA Current Sense Resistor RCS=2.1â"¦ 2. Design Transformer Inductance of Primary Side BCD Semiconductor
Original
AP3706/08N
Abstract: 5mA) · VIN = 3.60V · VOUT = 11.83V · IPEAK = 238mA · IOUT = 5mA @ = 86.2% · IIN = 19mA · , 238mA · IOUT = 40mA @ = 89.6% · IIN = 144mA · Output Ripple ~ 65mV TABLE 2 ­ COMPARISON OF , VIN = 3.6V, VOUT = 11.6V, IPEAK = 238mA, = 90%, VRIPPLE < 100mV (COUT = 4.7uF) POWER AND THERMAL , , VOUT = 11.8V, IPEAK = 238mA, = 86%, VRIPPLE < 50mV (COUT = 4.7uF) (T ( J max ) - TA Microsemi
Original
LX1741 LX1742 AN-22 boost converter application note AN22 LX7142 LX1741/LX1742 LX741
Abstract: 21.8mA 22.0mA 22.2mA 22.4mA 22.6mA 22.8mA 23.0mA 23.2mA 23.4mA 23.6mA 23.8mA 24.0mA 24.2mA 24.4mA 24.6mA , 21.2mA 21.4mA 21.6mA 21.8mA 22.0mA 22.2mA 22.4mA 22.6mA 22.8mA 23.0mA 23.2mA 23.4mA 23.6mA 23.8mA 24.0mA , 23.2mA 23.4mA 23.6mA 23.8mA 24.0mA 24.2mA 24.4mA 24.6mA 24.8mA 25.0mA 25.2mA 25.4mA 25.6mA Bit [6:0 , 21.2mA 21.4mA 21.6mA 21.8mA 22.0mA 22.2mA 22.4mA 22.6mA 22.8mA 23.0mA 23.2mA 23.4mA 23.6mA 23.8mA 24.0mA , 21.8mA 22.0mA 22.2mA 22.4mA 22.6mA 22.8mA 23.0mA 23.2mA 23.4mA 23.6mA 23.8mA 24.0mA 24.2mA 24.4mA 24.6mA ROHM
Original
ALC Automatic Level Control IR2120 13LED BD6086GU 11041EAT16 VCSP85H4 R1120A
Abstract: SSF22A5E 20V N-Channel MOSFET Main Product Characteristics: VDSS 20V RDS(on) 3Ω ID 238mA Pin Assignment Schematic Diagram Features and Benefits:      Low Gate Charge for Fast Switching Small 1.6 x 1.6 mm Footprint ESD Protected Gate Lead free product 150â"ƒ operating temperature Description: It utilizes the latest trench processing techniques to achieve fast switching speed and short reverse recovery time. These features combine to make this Good-Ark
Original
SC-89
Abstract: 21.8mA 22.0mA 22.2mA 22.4mA 22.6mA 22.8mA 23.0mA 23.2mA 23.4mA 23.6mA 23.8mA 24.0mA 24.2mA 24.4mA 24.6mA , 21.2mA 21.4mA 21.6mA 21.8mA 22.0mA 22.2mA 22.4mA 22.6mA 22.8mA 23.0mA 23.2mA 23.4mA 23.6mA 23.8mA 24.0mA , 23.2mA 23.4mA 23.6mA 23.8mA 24.0mA 24.2mA 24.4mA 24.6mA 24.8mA 25.0mA 25.2mA 25.4mA 25.6mA Bit [6:0 , 21.2mA 21.4mA 21.6mA 21.8mA 22.0mA 22.2mA 22.4mA 22.6mA 22.8mA 23.0mA 23.2mA 23.4mA 23.6mA 23.8mA 24.0mA , 21.8mA 22.0mA 22.2mA 22.4mA 22.6mA 22.8mA 23.0mA 23.2mA 23.4mA 23.6mA 23.8mA 24.0mA 24.2mA 24.4mA 24.6mA ROHM
Original
9256 IG22
Abstract: GDSSF22A5E Main Product Characteristics: VDSS 20V RDS(on) 3Ω ID 238mA Pin Assignment Schematic diagram Features and Benefits:      Low Gate Charge for Fast Switching Small 1.6 x 1.6 mm Footprint ESD Protected Gate Pb-Free Package is Available 150â"ƒ operating temperature Description: It utilizes the latest trench processing techniques to achieve fast switching speed and short reverse recovery time. These features combine to make this design an extremely Good-Ark
Original
Abstract: 21.8mA 22.0mA 22.2mA 22.4mA 22.6mA 22.8mA 23.0mA 23.2mA 23.4mA 23.6mA 23.8mA 24.0mA 24.2mA 24.4mA 24.6mA , 21.2mA 21.4mA 21.6mA 21.8mA 22.0mA 22.2mA 22.4mA 22.6mA 22.8mA 23.0mA 23.2mA 23.4mA 23.6mA 23.8mA 24.0mA , 23.2mA 23.4mA 23.6mA 23.8mA 24.0mA 24.2mA 24.4mA 24.6mA 24.8mA 25.0mA 25.2mA 25.4mA 25.6mA Bit [6:0 , 21.2mA 21.4mA 21.6mA 21.8mA 22.0mA 22.2mA 22.4mA 22.6mA 22.8mA 23.0mA 23.2mA 23.4mA 23.6mA 23.8mA 24.0mA , 21.8mA 22.0mA 22.2mA 22.4mA 22.6mA 22.8mA 23.0mA 23.2mA 23.4mA 23.6mA 23.8mA 24.0mA 24.2mA 24.4mA 24.6mA ROHM
Original
0000011 BD6086 ir2210
Abstract: , Output Current IO=0.5A Ipk = 238mA Efficiency 75% Step 2: Design Transformer Settings , Current of Primary Side and RCS Peak Current of Primary Side Ipk=238mA Current Sense Resistor BCD Semiconductor
Original
transformer winding formula step down step down transformer winding ratio AP3708 transformer winding formula AP3706 EE16 transformer working AP3706/08
Abstract: bias power. Vr = coil energization voltage. Pin 4 Logic element Pin 2 1 = 0.40 to 2.38mA 0 = Teledyne Relays
Original
411DD teledyne 411-12 1411d Teledyne Relays 411 411D-12 411D 411D-26 411/1203/Q1
Abstract: /cm2, Vop=4.6V, Iop=23.8mA 9.6 V 26.9 mA 52 mW 109 mW Operating Temperature SANYO Electric
Original
ENA1306 transistor a1306 A1306 transistor semiconductor a1306
Abstract: ®—å边峰å'¼ç"uæuï¼Œ I pk_max = 238mA è'ƒè™'å° CPR è"šå¸ç"uæuçš"限å¶ï¼Œæ¨èä½¿ç"¨ 10K Nov. 2009 I pks Diodes
Original
AP3768 28AWG
Abstract: 25mA 5.69VA 5.0VA 21.27 20.45 AC 220V 23.8mA 21mA 5.24VA 4.6VA 27.75 Panasonic
Original
AW5123 AW5124 AW5134 AW5125 AW5128 AW5138 AW5222 aw5127 aw5129 aw5122 AC100 DC100 AW5122 AW5132 AW5142F
Abstract: ^/KVo=l. 17V) 49 cm â'¢ â'¢ 50 â'¢ â'¢ At A , â'¢ â'¢ 56 â'¢ â'¢ Ã';ft/KIin=23.8mA), tiS¿)^(Vo=l.52V) 57 C14 â -
OCR Scan
INS420 ESS-630A photo transistor til 78 tabai espec PC3-24-5 PCD3-24-1212
Abstract: 14.2mA 7.1mA 330mA 165mA 83mA 16.5mA 8.3mA 170mA 86mA 42mA 8.6mA 3.7mA 238mA 118mA -
Original
spdt 6v relay RELAY PCB DPDT 12V 6v spdt relay DPDT relay 6v RH2b-u rh2b-ul DC/30 DC/100 LR35144 B020813332452
Abstract: Logic element 1 = 0.40 to 2.38mA 0 = 0.3Vdc min. Pin 2 Pin 3 Teledyne Part Numbering System for T2R Teledyne Relays
Original
411t rop 101 ROP/1203/Q1
Abstract: ) (3.9V- 9.0mA) 39mW (4.6V- 8.3mA) 36.1 41.3 4.1 AM-8704 (3.9V- 23.8mA) 97mW , - 26.9mA) 109mW (4.6V- 23.8mA) (3.9V- 12.1mA) 52mW (4.6V- 11.3mA) 36.1 55.1 (3.9V SANYO Electric
Original
SANYO Amorton 1.5V solar garden light solar cell Amorphous solar cells circuit diagram AM-5610 solar street light design EP120B
Abstract: 5mA) · VIN = 3.60V · VOUT = 11.83V · IPEAK = 238mA · IOUT = 5mA @ = 86.2% · IIN = 19mA · , 238mA · IOUT = 40mA @ = 89.6% · IIN = 144mA · Output Ripple ~ 65mV TABLE 2 ­ COMPARISON OF , VIN = 3.6V, VOUT = 11.6V, IPEAK = 238mA, = 90%, VRIPPLE < 100mV (COUT = 4.7uF) POWER AND THERMAL , , VOUT = 11.8V, IPEAK = 238mA, = 86%, VRIPPLE < 50mV (COUT = 4.7uF) (T ( J max ) - TA Philips Semiconductors
Original
BGA2776 MGU455 SMD MARKING g5 snw-eq-608
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