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NVA4001NT1G ON Semiconductor Small Signal MOSFET 20V 238mA 1.5 Ohm Single N-Channel SC-75 with ESD Protection MOSFET 20V 238mA 1.5 Ohm Single N-Channel SC-75 with ESD Protection, SC-75 (SOT-416) 3 LEAD, 3000-REEL visit Digikey Buy
NTA4001NT1G ON Semiconductor Small Signal MOSFET 20V 238mA 1.5 Ohm Single N-Channel SC-75 with ESD Protection, SC-75 (SOT-416) 3 LEAD, 3000-REEL visit Digikey Buy

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238mA

Catalog Datasheet MFG & Type PDF Document Tags

NOA1306

Abstract: 8705 =11.3mA 9.6 2 AM-1.5,100mW/cm ,Vop=4.6V, Iop=23.8mA Topr -1060 Tstg -2070
-
Original
AM-8705 O2908HKIM NOA1306 8705 A1306 A1306-1/2 A1306-2/2

AT7S64

Abstract: AM-1513 × 41.3 4.1 AM-8704 (3.9V- 23.8mA) 97mW (4.6V- 21.0mA) (3.9V- 10.7mA) 46mW (4.6V- 9.9mA) 41.2× 41.3 4.6 AM-8705 (3.9V- 26.9mA) 109mW (4.6V- 23.8mA) (3.9V- 12.1mA
SANYO Electric
Original
AM-1456 AM-1411 AM-1437 AM-1417 AM-1424 AM-1513 AT7S64 AM-5907 FL200Lux AM-1815 FL-200L FL-50L AM-1407

SL2501

Abstract: SL501B ) 667mA 555mA 416mA 333mA 277mA 238mA 208mA 185mA 1666mA 1333mA 1111mA 833mA 666mA
Beijing Chuang Si Fang Electronic
Original
SL5-06B SL20-01B SL10-01 SL2501 SL501B sl501 SL20 sl2.502 LI018V1/2002 1000MO 6KV/50 UL94-V 5VA-10VA-20VA-30VA 5-05B

transformer 230V to 12V 500mA

Abstract: transformer 230V 12V 500mA 230V @238mA @208mA @179mA @43mA 21V 24V 28V 115V @476mA @416mA @358mA @86mA TL39X , 42V 48V 56V 230V @238mA @208mA @179mA @43mA 21V 24V 28V 115V @476mA @416mA @358mA
DB Lectro
Original
transformer 230V to 12V 500mA transformer 230V 12V 500mA transformer 230v to 9v 300mA Transformer 115V 24V 10va transformer 500mA 12v transformer 230V 16V 350mA 3750V 50/60H UL506 TUV/EN61558 EN60950 TL29E
Abstract: , Output Current IO=0.5A Ipk = 238mA Efficiency 75% Step 2: Design Transformer Settings , Ipk=238mA Current Sense Resistor RCS=2.1â"¦ 2. Design Transformer Inductance of Primary Side BCD Semiconductor
Original
AP3706/08N

boost converter application note

Abstract: TDS3034B 5mA) · VIN = 3.60V · VOUT = 11.83V · IPEAK = 238mA · IOUT = 5mA @ = 86.2% · IIN = 19mA · , 238mA · IOUT = 40mA @ = 89.6% · IIN = 144mA · Output Ripple ~ 65mV TABLE 2 ­ COMPARISON OF , VIN = 3.6V, VOUT = 11.6V, IPEAK = 238mA, = 90%, VRIPPLE < 100mV (COUT = 4.7µF) POWER AND THERMAL , , VOUT = 11.8V, IPEAK = 238mA, = 86%, VRIPPLE < 50mV (COUT = 4.7µF) (T ( J max ) - TA
Microsemi
Original
LX1741 LX1742 AN-22 boost converter application note TDS3034B AN22 LX1741/LX1742 LX741

ALC Automatic Level Control

Abstract: IR2120 21.8mA 22.0mA 22.2mA 22.4mA 22.6mA 22.8mA 23.0mA 23.2mA 23.4mA 23.6mA 23.8mA 24.0mA 24.2mA 24.4mA 24.6mA , 21.2mA 21.4mA 21.6mA 21.8mA 22.0mA 22.2mA 22.4mA 22.6mA 22.8mA 23.0mA 23.2mA 23.4mA 23.6mA 23.8mA 24.0mA , 23.2mA 23.4mA 23.6mA 23.8mA 24.0mA 24.2mA 24.4mA 24.6mA 24.8mA 25.0mA 25.2mA 25.4mA 25.6mA Bit [6:0 , 21.2mA 21.4mA 21.6mA 21.8mA 22.0mA 22.2mA 22.4mA 22.6mA 22.8mA 23.0mA 23.2mA 23.4mA 23.6mA 23.8mA 24.0mA , 21.8mA 22.0mA 22.2mA 22.4mA 22.6mA 22.8mA 23.0mA 23.2mA 23.4mA 23.6mA 23.8mA 24.0mA 24.2mA 24.4mA 24.6mA
ROHM
Original
ALC Automatic Level Control IR2120 13LED BD6086GU 11041EAT16 VCSP85H4 R1120A

Mosfet

Abstract: SSF22A5E SSF22A5E 20V N-Channel MOSFET Main Product Characteristics: VDSS 20V RDS(on) 3Ω ID 238mA Pin Assignment Schematic Diagram Features and Benefits:      Low Gate Charge for Fast Switching Small 1.6 x 1.6 mm Footprint ESD Protected Gate Lead free product 150â"ƒ operating temperature Description: It utilizes the latest trench processing techniques to achieve fast switching speed and short reverse recovery time. These features combine to make this
Good-Ark
Original
Mosfet SC-89

IG22

Abstract: 9256 21.8mA 22.0mA 22.2mA 22.4mA 22.6mA 22.8mA 23.0mA 23.2mA 23.4mA 23.6mA 23.8mA 24.0mA 24.2mA 24.4mA 24.6mA , 21.2mA 21.4mA 21.6mA 21.8mA 22.0mA 22.2mA 22.4mA 22.6mA 22.8mA 23.0mA 23.2mA 23.4mA 23.6mA 23.8mA 24.0mA , 23.2mA 23.4mA 23.6mA 23.8mA 24.0mA 24.2mA 24.4mA 24.6mA 24.8mA 25.0mA 25.2mA 25.4mA 25.6mA Bit [6:0 , 21.2mA 21.4mA 21.6mA 21.8mA 22.0mA 22.2mA 22.4mA 22.6mA 22.8mA 23.0mA 23.2mA 23.4mA 23.6mA 23.8mA 24.0mA , 21.8mA 22.0mA 22.2mA 22.4mA 22.6mA 22.8mA 23.0mA 23.2mA 23.4mA 23.6mA 23.8mA 24.0mA 24.2mA 24.4mA 24.6mA
ROHM
Original
IG22 9256
Abstract: GDSSF22A5E Main Product Characteristics: VDSS 20V RDS(on) 3Ω ID 238mA Pin Assignment Schematic diagram Features and Benefits:      Low Gate Charge for Fast Switching Small 1.6 x 1.6 mm Footprint ESD Protected Gate Pb-Free Package is Available 150â"ƒ operating temperature Description: It utilizes the latest trench processing techniques to achieve fast switching speed and short reverse recovery time. These features combine to make this design an extremely Good-Ark
Original

0000011

Abstract: BD6086 21.8mA 22.0mA 22.2mA 22.4mA 22.6mA 22.8mA 23.0mA 23.2mA 23.4mA 23.6mA 23.8mA 24.0mA 24.2mA 24.4mA 24.6mA , 21.2mA 21.4mA 21.6mA 21.8mA 22.0mA 22.2mA 22.4mA 22.6mA 22.8mA 23.0mA 23.2mA 23.4mA 23.6mA 23.8mA 24.0mA , 23.2mA 23.4mA 23.6mA 23.8mA 24.0mA 24.2mA 24.4mA 24.6mA 24.8mA 25.0mA 25.2mA 25.4mA 25.6mA Bit [6:0 , 21.2mA 21.4mA 21.6mA 21.8mA 22.0mA 22.2mA 22.4mA 22.6mA 22.8mA 23.0mA 23.2mA 23.4mA 23.6mA 23.8mA 24.0mA , 21.8mA 22.0mA 22.2mA 22.4mA 22.6mA 22.8mA 23.0mA 23.2mA 23.4mA 23.6mA 23.8mA 24.0mA 24.2mA 24.4mA 24.6mA
ROHM
Original
0000011 BD6086 ir2210

transformer winding formula step down

Abstract: step down transformer winding ratio , Output Current IO=0.5A Ipk = 238mA Efficiency 75% Step 2: Design Transformer Settings , Current of Primary Side and RCS Peak Current of Primary Side Ipk=238mA Current Sense Resistor
BCD Semiconductor
Original
transformer winding formula step down step down transformer winding ratio AP3708 transformer winding formula AP3706 EE16 transformer working AP3706/08

teledyne 411-12

Abstract: Teledyne 411 bias power. Vr = coil energization voltage. Pin 4 Logic element Pin 2 1 = 0.40 to 2.38mA 0 =
Teledyne Relays
Original
411DD teledyne 411-12 Teledyne 411 1411d 411D 411D-12 Teledyne Relays 411 411/1203/Q1

A1306

Abstract: transistor a1306 /cm2, Vop=4.6V, Iop=23.8mA 9.6 V 26.9 mA 52 mW 109 mW Operating Temperature
SANYO Electric
Original
ENA1306 transistor a1306 A1306 transistor semiconductor a1306
Abstract: ®—å边峰å'¼ç"µæµï¼Œ I pk_max = 238mA è'ƒè™'å° CPR è"šå¸ç"µæµçš"限å¶ï¼Œæ¨èä½¿ç"¨ 10K Nov. 2009 I pks Diodes
Original
AP3768 28AWG

AW5222

Abstract: AW5124 25mA 5.69VA 5.0VA 21.27 20.45 AC 220V 23.8mA 21mA 5.24VA 4.6VA 27.75
Panasonic
Original
AW5123 AW5124 AW5134 AW5137 AW5125 AW5128 AW5222 aw5127 aw5129 aw5122 AC100 DC100 AW5122 AW5132 AW5142F

INS420

Abstract: photo transistor til 78 ^/KVo=l. 17V) 49 cm â'¢ â'¢ 50 â'¢ â'¢ At A , â'¢ â'¢ 56 â'¢ â'¢ Ã';ft/KIin=23.8mA), tiS¿)^(Vo=l.52V) 57 C14 â
-
OCR Scan
INS420 photo transistor til 78 tabai espec ESS-630A PC3-24-5 PCD3-24-1212

spdt 6v relay

Abstract: RELAY PCB DPDT 12V 14.2mA 7.1mA 330mA 165mA 83mA 16.5mA 8.3mA 170mA 86mA 42mA 8.6mA 3.7mA 238mA 118mA
-
Original
spdt 6v relay RELAY PCB DPDT 12V 6v spdt relay DPDT relay 6v RH2b-u rh2b-ul DC/30 DC/100 LR35144 B020813332452

Teledyne Relays 411

Abstract: 411t Logic element 1 = 0.40 to 2.38mA 0 = 0.3Vdc min. Pin 2 Pin 3 Teledyne Part Numbering System for T2R
Teledyne Relays
Original
411t rop 101 ROP/1203/Q1

SANYO Amorton

Abstract: 1.5V solar garden light ) (3.9V- 9.0mA) 39mW (4.6V- 8.3mA) 36.1 41.3 4.1 AM-8704 (3.9V- 23.8mA) 97mW , - 26.9mA) 109mW (4.6V- 23.8mA) (3.9V- 12.1mA) 52mW (4.6V- 11.3mA) 36.1 55.1 (3.9V
SANYO Electric
Original
SANYO Amorton 1.5V solar garden light solar cell Amorphous solar cells circuit diagram AM-5610 solar street light design EP120B

snw-eq-608

Abstract: SMD MARKING g5 5mA) · VIN = 3.60V · VOUT = 11.83V · IPEAK = 238mA · IOUT = 5mA @ = 86.2% · IIN = 19mA · , 238mA · IOUT = 40mA @ = 89.6% · IIN = 144mA · Output Ripple ~ 65mV TABLE 2 ­ COMPARISON OF , VIN = 3.6V, VOUT = 11.6V, IPEAK = 238mA, = 90%, VRIPPLE < 100mV (COUT = 4.7µF) POWER AND THERMAL , , VOUT = 11.8V, IPEAK = 238mA, = 86%, VRIPPLE < 50mV (COUT = 4.7µF) (T ( J max ) - TA
Philips Semiconductors
Original
BGA2776 snw-eq-608 SMD MARKING g5 MGU455
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