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HCTF235L055000BR00 Vishay Beyschlag TCO 24V 55A 235C (455F) AXIAL visit Digikey Buy

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Part : HCTF235L055000BR00 Supplier : Vishay Intertechnology Manufacturer : Avnet Stock : - Best Price : €2.19 Price Each : €3.89
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235L05

Catalog Datasheet MFG & Type PDF Document Tags

sfh610 equivalent

Abstract: -4 SFH628A-2 SFH628A-3 SFH628A-4 SFH628-2 SFH628-3 SFH628-4 Ã235L05 OQ'ÌSbMB 5-243 TTM
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sfh610 equivalent SFH6106 SFH6116 SFH6156 SFH6186 SFH6206 SFH6286

M7 SMD DIODE MARKING

Abstract: transistor smd AsG 7a = 25-C 1 â  Data Book ±20 Class 1 ESD Sensitivity (HBM) as per MIL-STD 883 Û235L05 , = 0.01, Tc=25'C ^(B R )D S S = f ( T ¡ ) Û235L05 G133GÃ4 7^7 Data Book 362 06.99
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BSS88 M7 SMD DIODE MARKING transistor smd AsG Q62702-S287 Q62702-S303 Q62702-S576 E6288 E6296
Abstract:   Sem iconductor Group Û235L.05 011fl572 77 23T â  1998-11-01 TLE 4260 SIEM ENS , Overtemperature Reverse polarity GND Block Diagram Ã"235L.05 0116573 17b â  Semiconductor Group 78 -
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Q67000-A8187 P-T0220-5-1 Q67000-A9044 P-T0220-5-2 P-T0220-5-H/S AED00587
Abstract: 2064 â  max Unit 1 998-11-01 Ã235L05 D1BSH73 â  SIEMENS CGY 195 , =417p.s, duty cycle 10% , Pin=3dBm Semiconductor Group 2073 â  1998-11-01 Ã235L05 OlEEBâE à -
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CGY195 Q68000-A9 SCT595 G122372 G12S3
Abstract: ) Pulse test: t < 300ns; D < 2% Semiconductor Group 1042 ' m Ã235L05 OlHOfifl? 063 1998-11-01 -
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C62702-C2487
Abstract: IO-5 10'* 10"3 IO"2 10-1 s 10° â'" Semiconductor Group » I 2212 ñ235L.05 -
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Q68000-A8487 Q68000-A8437 EHA0700 01225G D1225D7

ic bsp 350

Abstract: 235L &235L.05 ODÃlbBl 705 SIEMENS BSP 350 Typ. short circuit current â lise) =
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Q67000-S227 ic bsp 350 235L
Abstract: 1 998-11-01 Ã235L05 D121ö3b 5 m â  SIEMENS BFP 23 BFP 26 Collector cutoff current -
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Q62702-F622 Q62702-F722 EHP0Q657
Abstract: Semiconductor Group 1385 â  1998-11-01 Û235L05 0121ÛD3 DLE â  S IE M E N S BFN 21 Total -
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Q62702-F1059
Abstract: mounted on alumina BAS 125 Reverse cu rren t / Semiconductor Group r = / ( V 309 Ã"235L05 -
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Q62702-D1316 Q62702-D1321 EHM7002 EHA07005 Q62702-D1322 Q62702-D1323
Abstract: information se e chapter Package Outlines. Sem iconductor Group 275 : â  Ã› 235L05 D lE D E fl -
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Q62702-A118 CHA07 Q62702-A730 EHA0700S Q62702-A711 EHA07004
Abstract: 1167 Ã 235L.05 0 1 2 1 0 1 2 fllfl SIEM ENS DC current gain BCX68 Collector-emitter -
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Q62702-C1572 Q62702-C1864 Q62702-C1865 Q62702-C1866 D1S1Q11

Hall Siemens

Abstract: 3 PIN hall effect sensor 10.94 â  Ã"235L05 00bû4ô2 T4T â  This Material Copyrighted By Its Respective Manufacturer SIEMENS
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Q62705-K265 KSY44 Hall Siemens 3 PIN hall effect sensor 4 pin hall sensor 4 pin package hall sensor hall 7a hall effect sensor spice model

siemens rs 1016

Abstract: 012E3 -2.8 -4.7 -8.1 -10.9 -12.9 -14.8 -18.7 -20.6 -21.5 -25.0 1998-11-01 Ã235L.05 0152331
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siemens rs 1016 012E3 Q62702-G44 E35L0S 012E3S 235LD5
Abstract: 1998-11-01 Û235L.05 D1521L5 TSQ â  SIEMENS BFS 17W Total power dissipation p tot = ^ ( 7A*. TS -
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Q62702-F1645
Abstract: 925 â  Ã235L05 0120770 T H â  1 998-11 -01 SIEMENS BCR 148W Total power -
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Q62702-C2291 01H07

siemens igbt

Abstract: C67076-A2015-A2 Semiconductor Group Page 3 â  Ã235L05 OGbüSSS S?i4 BSM 300 G A 160 D Power dissipation Ptot = '(Tc) Ptof
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C67076-A2015-A2 siemens igbt IGBT Single 1200v 1000a tsc 3001 3001li 1E-02 1E-03 1E-04 1E-05 1E-01
Abstract: â  Ã235L.05 0DÃ"1213 Obb SIEMENS TEMPFET BTS110 Features â'¢ â'¢ â'¢ â'¢ N channel Enhancement mode Temperature sensor with thyristor characteristic The drain pin is electrically shorted to the tab Pin 1 2 3 G D S Refer to circuit design hints (see chapter Technical Information) Type vD S h ^D S (o n ) Package Ordering Code BTS 110 100 V 10 A 0.2 TO-220AB C67078-A5008-A2 n Maximum Ratings Parameter Symbol Values -
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E3045 C67078-A5008-A4
Abstract: â I 1 99 8-1 1-01 Ã235L05 G1E2E47 â  SIEMENS BSS 79 BSS 81 Electrical -
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Q62702-S503 Q62702-S501 Q62702-S555 Q62702-S605 EHPQ0674
Abstract: ) Semiconductor Group Permissible Pulse Load Ptotmax/PtotDC = f Up) 1741 Ã235L05 0 1 E E 1 4 3 -
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900MH Q62702-F1298 23SLDS D155144 D12514S

Q729

Abstract: 16-DRAM 20 20 - ns Notes see page 157. Semiconductor Group 155 â I Ã"235L05 005535^ TOb â  This , Cycle Semiconductor Group 166 m &235L05 0055370 b77 â  This Material Copyrighted By Its Respective
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16-DRAM Q729 Q67100-Q727 514171BJ-60/-70/-80 514171BJL-60/-70/-80 514171BJ/BJL I/01-I/016 00S5371
Abstract: current (DO is disabled, 0 V < VoU < Vcc ) X â  Semiconductor Group A)(L) Ã235L.05 G1 23457 , Data to CAS low delay f DZC 0 - ns 13 Ã"235L05 G12345Û 320 Semiconductor Group -
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005GCD 01S3ML2 L-DIM-144-C1 L-DIM-144-C4 BE35L
Abstract: SIEMENS testboards. (Duroid 5880, Teflon Boards) S em iconductor G roup 20 Ã235L.05 0CHfi bb2 -
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T2332-XV12-P2-7600 30-3000MH
Abstract: area for connection. PCB is vertical without blown air. Semiconductor Group 436 â  Ã"235L.05 -
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BTS410F2
Abstract: Symbol Erase + write cycle (per page) Semiconductor Group *WR 20 â  i Ã"235L05 011*1543 -
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24C164

T3D 46 diode

Abstract: Diode T3D 56 mounted on alumina BAS 125 Reverse cu rren t / Semiconductor Group r = / ( V 309 Ã"235L05
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T3D 46 diode Diode T3D 56 T3D 65 diode Diode T3D 08 t3d 56 T3D 49 diode C67047-A2250-A2

TCA2365

Abstract: A235L Semiconductor Group Page 3 â  Ã235L05 OGbüSSS S?i4 BSM 300 G A 160 D Power dissipation Ptot = '(Tc) Ptof
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TCA2365 A235L Q67000-A1876 Q67000-A8017 P-DIP-18-L-9 P-DIP-18L-9 T-79-23 GG35143
Abstract: ° 101 102 V 103 ^ ^S D Semiconductor Group 07.96 622 Û235L.05 OOà -
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5117400AJ-50/-60/-70/-80 5117400ASJ-50/-60/-70/-80 P-SOJ-28/24-1 P-SOJ-26/24-1 5117400AJ/AS J-50/-60/-70/-80
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