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230nC

Catalog Datasheet Results Type PDF Document Tags
Abstract: reflow PW 300 250 PL PS PSL 200 Peak Temperature: 245o5nC (10s max.) Time at >230nC 40s max. ... Original
datasheet

4 pages,
82.67 Kb

TPS capacitor land 100uF 10v capacitor datasheet abstract
datasheet frame
Abstract: PSL 200 Peak Temperature: 245o5nC (10s max.) Time at >230nC 40s max. Temp. (nC) Pre-heating ... Original
datasheet

4 pages,
191.93 Kb

datasheet abstract
datasheet frame
Abstract: 300336A >230nC 40s max. Temp. (nC) Pre-heating 150o15nC 60 to 90s 150 Max. Peak Gradient 2.5nC/ s ... Original
datasheet

4 pages,
186.29 Kb

tantalum capacitor case b avx datasheet abstract
datasheet frame
Abstract: Temperature: 245o5nC (10s max.) Time at >230nC 40s max. Temp. (nC) Pre-heating 150o15nC 60 to 90s 150 ... Original
datasheet

4 pages,
191.33 Kb

datasheet abstract
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Abstract: Temperature: 245o5nC (10s max.) Time at >230nC 40s max. Temp. (nC) Pre-heating 150o15nC 60 to 90s 150 ... Original
datasheet

4 pages,
184.14 Kb

datasheet abstract
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Abstract: FCH76N60NF FCH76N60NF 600V N-Channel MOSFET, FRFET November 2010 FCH76N60NF FCH76N60NF 600V N-Channel MOSFET, FRFET Features · RDS(on) = 31.5m ( Typ.)@ VGS = 10V, ID = 38A · Ultra Low Gate Charge ( Typ.Qg = 230nC) · Low Effective Output Capacitance · 100% Avalanche Tested · RoHS Compliant SupreMOS TM tm Description The SupreMOS MOSFET, Fairchild's next generation of high voltage super-junction MOSFETs, employs a deep trench filling process that differentiates it from preceding multi-epi based technologies. By ... Original
datasheet

8 pages,
218.59 Kb

FCH76N60NF FCH76N60NF abstract
datasheet frame
Abstract: Temperature: 245o5nC (10s max.) Time at >230nC 40s max. Temp. (nC) Pre-heating 150o15nC 60 to 90s 150 ... Original
datasheet

5 pages,
173.18 Kb

datasheet abstract
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Abstract: , ATX power, and industrial power applications. · Ultra Low Gate Charge ( Typ.Qg = 230nC) · Low ... Original
datasheet

8 pages,
230.78 Kb

FCH76N60NF FCH76N60NF abstract
datasheet frame
Abstract: Peak Temperature: 245o5nC (10s max.) Time at >230nC 40s max. Temp. (nC) Pre-heating 150o15nC 60 ... Original
datasheet

4 pages,
194.06 Kb

datasheet abstract
datasheet frame
Abstract: ( Typ.Qg = 230nC) · Low Effective Output Capacitance · 100% Avalanche Tested · RoHS Compliant D G G D ... Original
datasheet

8 pages,
508.01 Kb

FCH76N60NF FCH76N60NF abstract
datasheet frame
Abstract: Oxford Electrical Products Ltd Units 15 ­ 17 Industrial estate Wroslyn Road, Freeland Witney, Oxon OX29 8SN. PS2125 PS2125 DATA SHEET issue 4 Description: 230VAC 230VAC to 5VDCVDC @ 1000mA regulated encapsulated power supply Connection Terminal L Voltage Details N 0 230~ NC NC 0 +5DC Connector specification: Terminal: brass, 0.8t tin plated Screw: steel, M4 Ni, plated Wire range: 22-12AWG 22-12AWG Max. torque 1.2Nm Electrical specification: Input: 207 ­ 253VAC 253VAC, 50H ... Original
datasheet

1 pages,
89.34 Kb

PS2125 230VAC PS2125 abstract
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Abstract: Oxford Electrical Products Ltd Units 15 ­ 17 Industrial estate Wroslyn Road, Freeland Witney, Oxon OX29 8SN. PS2126 PS2126 DATA SHEET issue 4 Description: 230VAC 230VAC to ±12VDC 12VDC @ 400mA regulated encapsulated power supply Connection Terminal L Voltage Details N 0 230 NC -12 0 +12 0 AC IN 0 230V DC OUT All materials are UL94V-2 UL94V-2 minimum. Transformer insulation class B min. Manufactured to: · EN60065 EN60065:1998 · Low Voltage directive CE 93/68/EEC 93/68/EEC · Lo ... Original
datasheet

2 pages,
193.61 Kb

PS2126 230 AC to 12V dc transformer transformer 230v ac 12V Oxford Electrical Products 230vac to 12vdc 230vac 12vdc transformer 230vac to primary 12v transformer 230VAC 12VDC PS2126 abstract
datasheet frame
Abstract: Oxford Electrical Products Ltd Units 15 ­ 17 Industrial estate Wroslyn Road, Freeland Witney, Oxon OX29 8SN. PS2127 PS2127 DATA SHEET issue 6 Description: 230VAC 230VAC to ±15VDC 15VDC @ 500mA regulated encapsulated power supply Connection Terminal L Voltage Details N 0 230 NC -15 0 +15 0 AC IN 0 230V All materials are UL94V-2 UL94V-2 minimum. Transformer insulation class B min. Manufactured to: · EN60065 EN60065:1998 · Low Voltage directive CE 93/68/EEC 93/68/EEC · Low Voltage ... Original
datasheet

2 pages,
93.82 Kb

single shot thermal fuse Oxford 230vac to primary 15v transformer transformer from 230V AC to 15V PS2127 230VAC 15VDC PS2127 abstract
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Abstract: IMPLEMENTING A FPGA-BASED BROADBAND MODEM USING MODEL-BASED DESIGN Rob Pelt Altera Corporation 101 Innovation Drive San Jose, California, USA 95134 rpelt@altera.com 1. ABSTRACT Performance requirements for broadband modems continue to push the limits of analog technology. Fortunately, today's digital­to-analog converters (DACs) are approaching sampling rates in the gigahertz range, allowing broadband modems to implement multi-channel solutions in the digital domain. To fully utilize ... Original
datasheet

7 pages,
207.52 Kb

EP2S15 Pelt 8E-009 1E-008 EP2S180 EP2S30 EP2S60 EP2S90 DAC 5754 FPGA FAMILY FIR filter matlaB simulink design simulink design using FIR filter method baseband processor simulink CP-BRDBND05-1 CP-BRDBND05-1 abstract
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Abstract: m-56a MOS MOS FET MOS Field Effect Power Transistor 2SJ303 2SJ303 P MOS FET 2SJ303 2SJ303 P MOS FET mm 10.0�3 DC-DC 4.5�2 2.7�2 3�1 RDS(on)1 = 0.075 VGS = -10 V, ID = -7 A 4�2 RDS(on)2 = 0.13 VGS = -4.0 V, ID = -6 A CissCiss = 1200 pF 0.7�1 VGS(off) = -1.5 V 13.5 MIN. 4 V 12.0�2 15.0�3 3.2�2 2.5�1 1.3�2 1.5�2 2.54 2.54 0.65�1 1. Gate 2. Drain 3. Source 1 2 3 2SJ303 2SJ303 Isolated TO-220 TA ... Original
datasheet

6 pages,
220.73 Kb

nec 14-A 2SJ303 d1723 2SJ303 abstract
datasheet frame
Abstract: Advance Technical Information HiPerFET TM Power MOSFETs IXFB 38N100Q 38N100Q Q-Class N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic Rg High dV/dt, Low trr VDSS = 1000 V ID25 = 38 A RDS(on)= 0.26 trr 300 ns PLUS 264TM 264TM (IXFB) Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25癈 to 150癈 TJ = 25癈 to 150癈; RGS = 1 M VGS VGSM 1000 1000 V V Continuous Transient � � V V ID25 IDM IAR TC = 25癈 TC = 25癈, pulse width li ... Original
datasheet

2 pages,
139.69 Kb

98949 38N100Q datasheet abstract
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Abstract: JoWtX^Vi devices.INC. PRODUCT CÁTALO© N-CHANNEL ENHANCEMENT MOS FET ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL UNITS Drain-source VoIt.(1) VDSS 200 Vdc Dra in-Gate Vo1tage (RGs=1.0Mn) (l) VDGR 200 Vdc Gate-Source Voltage Con ti nuous VGS ±20 Vdc Drain Current Continuous (Tc = 25°C) ID 50 Ade Drain Current Pulsed(3) IDM 240 A Total Power Dissipation PD 300 M Power Dissipation Derat ing > 25'C 2.5 W/°C Operating S Storage Temp. TJ/Ts1 g -55 TO -150 •c Thermol Resistance RthJc 0.4 • ... OCR Scan
datasheet

1 pages,
143.75 Kb

SDF50NA20 D250 datasheet abstract
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Abstract: 2010 4 1 NEC http://www.renesas.com 2010 4 1 http://www.renesas.com http://japan.renesas.com/inquiry 1. 2. 3. 4. 5. 6. 7. OA AV 8. 9. 10. RoHS 11. 12. 1. 2. 1 MOS MOS FET MOS Field Effect Power Transistor 2SJ303 2SJ303 P MOS FET 2SJ30 2SJ30 ... Original
datasheet

8 pages,
426.71 Kb

2SJ303 datasheet abstract
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Abstract: C3D25170H C3D25170H­Silicon Carbide Schottky Diode Z-RecTM Rectifier VRRM = IF; TC ... Original
datasheet

5 pages,
370.47 Kb

VT 546 TO247-2 C3D25170H C3D25170H abstract
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Abstract: UNISONIC TECHNOLOGIES CO., LTD 25N10 25N10 Preliminary Power MOSFET N-CHANNEL ENHANCEMENT MODE POWER MOSFET DESCRIPTION The UTC 25N10 25N10 is an N-channel enhancement mode power MOSFET and it uses UTC's perfect technology to provide designers with fast switching, ruggedized device design, low on-resistance and cost-effectiveness. It is generally suitable for all commercial-industrial applications and DC/DC converters requiring low voltage. FEATURES * Single Drive Requirement * Low Gate C ... Original
datasheet

4 pages,
137.91 Kb

25N10 25N10 abstract
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