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225MHBS70K2H Illinois Capacitor Inc Film Capacitor, Polypropylene, 1275V, 10% +Tol, 10% -Tol, 2.2uF, Through Hole Mount, RADIAL LEADED-4, ROHS COMPLIANT visit Digikey Buy
225MHBS60K2H Illinois Capacitor Inc Film Capacitor, Polypropylene, 1100V, 10% +Tol, 10% -Tol, 2.2uF, Through Hole Mount, RADIAL LEADED-4, ROHS COMPLIANT visit Digikey Buy
225MHBS45K2H Illinois Capacitor Inc Film Capacitor, Polypropylene, 800V, 10% +Tol, 10% -Tol, 2.2uF, Through Hole Mount, RADIAL LEADED-4, ROHS COMPLIANT visit Digikey Buy
225MHBS50K2H Illinois Capacitor Inc Film Capacitor, Polypropylene, 900V, 10% +Tol, 10% -Tol, 2.2uF, Through Hole Mount, RADIAL LEADED-4, ROHS COMPLIANT visit Digikey Buy
TMK325B7225MH-T TAIYO YUDEN Ceramic Capacitor, Multilayer, Ceramic, 25V, 20% +Tol, 20% -Tol, X7R, 15% TC, 2.2uF, Surface Mount, 1210, CHIP, ROHS COMPLIANT visit Digikey Buy
KC355WD72E225MH01K Murata Manufacturing Co Ltd Ceramic Capacitor, Multilayer, Ceramic, 250V, 20% +Tol, 20% -Tol, X7T, -33/+22% TC, 2.2uF, Surface Mount, 2220, CHIP visit Digikey Buy

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Part : KC355WD72E225MH01K Supplier : muRata Manufacturer : Avnet Stock : - Best Price : $1.59 Price Each : $1.79
Part : KR355WD72E225MH01K Supplier : muRata Manufacturer : Avnet Stock : - Best Price : $1.59 Price Each : $1.79
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Part : TMK325B7225MH-T Supplier : TAIYO YUDEN Manufacturer : Avnet Stock : - Best Price : $0.0659 Price Each : $0.0899
Part : TMK325BJ225MHHT Supplier : TAIYO YUDEN Manufacturer : Avnet Stock : - Best Price : $0.0709 Price Each : $0.1079
Part : KRM55TR72E225MH01K Supplier : muRata Manufacturer : Future Electronics Stock : - Best Price : $2.96 Price Each : $2.96
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Part : CETMK325BJ225MHHT Supplier : TAIYO YUDEN Manufacturer : Onlinecomponentscom Stock : - Best Price : - Price Each : -
Part : FBCB225M-HB Supplier : Siemens Manufacturer : Onlinecomponentscom Stock : - Best Price : $4,604.2700 Price Each : $4,604.2700
Part : PEG225MH3900QE1 Supplier : KEMET Manufacturer : Onlinecomponentscom Stock : - Best Price : $5.25 Price Each : $5.25
Part : TMK325B7225MH-T Supplier : TAIYO YUDEN Manufacturer : Onlinecomponentscom Stock : - Best Price : - Price Each : -
Part : TMK325BJ225MHHT Supplier : TAIYO YUDEN Manufacturer : Onlinecomponentscom Stock : - Best Price : - Price Each : -
Part : SM042C225MHN360 Supplier : AVX Manufacturer : Bristol Electronics Stock : 7 Best Price : $36.00 Price Each : $36.00
Part : 225MHBS60K2H Supplier : Illinois Capacitor Manufacturer : Richardson RFPD Stock : - Best Price : - Price Each : -
Part : 225MHBS70K2H Supplier : Illinois Capacitor Manufacturer : Richardson RFPD Stock : - Best Price : - Price Each : -
Part : KC355WD72E225MH01K Supplier : muRata Manufacturer : Chip1Stop Stock : 500 Best Price : $4.0460 Price Each : $4.0460
Part : KRM55TR72E225MH01K Supplier : muRata Manufacturer : Chip1Stop Stock : 1,000 Best Price : $1.8269 Price Each : $1.8269
Part : TMK325B7225MH-T Supplier : TAIYO YUDEN Manufacturer : Chip1Stop Stock : 1,500 Best Price : $0.7730 Price Each : $0.7730
Part : TMK325BJ225MHHT Supplier : TAIYO YUDEN Manufacturer : Chip1Stop Stock : 2,000 Best Price : $0.0486 Price Each : $0.0486
Part : TMK325BJ225MHHT Supplier : TAIYO YUDEN Manufacturer : Chip1Stop Stock : 2,000 Best Price : $0.2074 Price Each : $0.2074
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225MH

Catalog Datasheet MFG & Type PDF Document Tags

Mosfet

Abstract: SSF11NS65F V VGS Gate-to-Source Voltage ± 30 V EAS Single Pulse Avalanche Energy @ L=22.5mH 281 mJ IAS Avalanche Current @ L=22.5mH 5 A -55 to + 150 °C PD @TC = 25Â
Good-Ark
Original
SSF11NS65F Mosfet

Mosfet

Abstract: SSF11NS70UF Gate-to-Source Voltage ± 30 V EAS Single Pulse Avalanche Energy @ L=22.5mH 45 mJ IAS Avalanche Current @ L=22.5mH 2 A -55 to +150 °C PD @TC = 25°C TJ TSTG
Good-Ark
Original
SSF11NS70UF 10BSC

Mosfet

Abstract: SSF11NS65 @ L=22.5mH 281 mJ IAS Avalanche Current @ L=22.5mH 5 A -55 to + 150 °C
Good-Ark
Original
SSF11NS65 diode 945 O-220 54BSC

PM-9630

Abstract: HT-503 22.5mH MIN TIE:5+6 lKHz IV lOOrnA ® SUPERWORLD ELECTRONICS (S) PTE LTD
-
OCR Scan
HT-503 PM-9630 225MH SEPB3HT-50379

Mosfet

Abstract: SSF11NS60 VGS Gate-to-Source Voltage ± 30 V EAS Single Pulse Avalanche Energy @ L=22.5mH 281 mJ IAS Avalanche Current @ L=22.5mH 5 A -55 to +150 °C PD @TC = 25°C TJ
Good-Ark
Original
SSF11NS60 35REF 29REF

Mosfet

Abstract: SSF11NS60D Gate-to-Source Voltage ± 30 V EAS Single Pulse Avalanche Energy @ L=22.5mH 281 mJ IAS Avalanche Current @ L=22.5mH 5 A -55 to +150 °C PD @TC = 25°C TJ TSTG
Good-Ark
Original
SSF11NS60D
Abstract: 2-10(tie 1+4, 7+8). 600Vrms for 1 second between 2-1. 2.25mH ±5%, 10kHz, lOOmVAC, O/lOOmADC, 2-5(tie -
OCR Scan
2000VAC 2050VAC NC/005587 E205930 GB539W IEC60950
Abstract: ., 200Hz, 1.0VAC, 65mADC, 1 - 2 , Lp. 225mH m in., 200Hz, 1.0VAC, lOOmADC, 1 - 2 , Lp. ( l- 2 ) :( 4 - 3 -
OCR Scan
4000H 1000H 1000VAC 1250VAC

smd transistor 2A

Abstract: SMD Transistor nc temperature *2 l=22.5mH,IAS=3.2A,VDD=50V,RG=25 ,Startion TJ=25 *3 ISD 3.2A,di/dt 200A/ S,VDD BVDSS
Kexin
Original
smd transistor 2A SMD Transistor nc KQB3N30

225MH

Abstract: 1. Dimensions: 0.098 0.030 Typ 10 X o o in m H H H R XFMRS XFADSL22S WWW â'¢ y y y u u. 5 1 0.550 Max X o o o , r rb 490 Max- o o Tape -0.020 Typ "â¡ â¡ â¡ â¡ â 0.050 Typ _L Q_ m CM o T Q_ o o 2.Schematic: 10< PRI D C c 1 3 2 4 SEC 3.Electrical Specifications: ®25°C Turns Ratio: (P10-7):(P1 -4) = 1:1.42±2% (TIE P3-2.P8-9) PIN10-7 OCL: 2.25mH ±10% @10KHz 0.1V (TIE PIN9-8) Ls PIN10-7 LL: 30uH Max @100KHz 0.1V (CONNECT PIN9-8, Short 1-4) Ls DC Res
-
OCR Scan
100KH P10-8 3000VAC P10-1 UL1950
Abstract: ELECTRICAL CHARACTERISTICS: Inductance: 2.25mH ±10% @10KHz,0.1V 2-5 with 4-1 short Leakage Inductance: 8uH Max lOOKHz,0.02V 2-5 with 4-1 and 10-6 short Turns Ratio: 1:3CS±2% @100KHz,50mV Line Side DC Resistance: 3.30 Ohms Maxl-4=2-5 @25°C Chip Side DC Resistance: 0.75 Ohms Max 10-6 @25°C Longitudinal Balance: lOKHz -400KHz 53dB Min THD: @15KHz,3.8V-7ldB Min Return Loss: from 50KHz to 2MHz 12dB Max imi Transtek Magnetics Magnetics products for a changing woild.â"¢ TMT7)I wri I016CT (Hww W-YEAR WW-WEEK 20- 40 -
OCR Scan
1500V TMT70016CT TMD00467
Abstract: 600VAC for 1 secon d between 1 -2 . 2.25mH ±5%, 10kHz, lOOmVAC, O/lOOmADC, 2 - 5 (tie 1+4), Ls, -40*C to -
OCR Scan
UL60950/CSA60950 AS/NZS60950 150VDC

85c6b

Abstract: 12205 . INDUCTANCE: LEAKAGE INDUCTANCE: TURNS RATIO: TOTAL HARMONIC DISTORTION: 2.25mH ±5%, 10kHz, lOOmVAC, O/lOOmADC
-
OCR Scan
85c6b 12205 50896 US/8104/UL EN60950

6F6L

Abstract: 225MH 600Vrms for 1 second between 2-1. 2.25mH ±5%, 10kHz, lOOmVAC, O/lOOmADC, 2 -5 (tie 1+4), Ls, -40°C to
-
OCR Scan
6F6L NC/012205

4N65F

Abstract: 4n65 Dissipation Derating Factor TC=25â"ƒ Avalanche Energy with Single Pulse IAS=4A, VDD=150V, L=22.5mH
HY Electronic
Original
4N65F 4n65 HY4N65T HY4N65FT ITO-220AB 2002/95/EC MIL-STD-750 4N65T

TRANSISTOR FS 2025

Abstract: THD219HI 2.0 1.5 0.6 I c -5A f = 32KHz R th= 1 9 °C/W L-225mH 0=5.1 fj. F
-
OCR Scan
THD219HI TRANSISTOR FS 2025 ISOWATT218 E81734 GC17080 IS0WATT218 P025C
Abstract: +25°C, L = 2.25mH, RG = 25 , Peak IL = 20A Microsemi reserves the right to change, without notice, the Microsemi
Original
ARF1511

ARF1511

Abstract: 225MH +25°C, L = 2.25mH, RG = 25, Peak IL = 20A Microsemi reserves the right to change, without notice, the
Microsemi
Original

rf power generator

Abstract: ARF1511 . 3 Starting Tj = +25°C, L = 2.25mH, RG = 25, Peak IL = 20A APT Reserves the right to change, without
Advanced Power Technology
Original
rf power generator 750w planar transistor ARF 250v 1500w
Abstract: . Repetitive Rating : Pulse width limited by maximum junction temperature 3. L = 22.5mH, IAS = 4 A, VDD = 50V Unisonic Technologies
Original
4N70K-MT QW-R205-037 4N70KL-TA3-T 4N70KG-TA3-T 4N70KL-TF3-T 4N70KG-TF3-T

TDA5030A

Abstract: TDA5030 @ L=22.5mH 281 mJ IAS Avalanche Current @ L=22.5mH 5 A -55 to + 150 °C
-
OCR Scan
TDA5030A TDA5030 vHF amplifier DIAGRAM T-163A A5030AN A5030ATD 100MH
Abstract: Gate-to-Source Voltage ± 30 V EAS Single Pulse Avalanche Energy @ L=22.5mH 45 mJ IAS Avalanche Current @ L=22.5mH 2 A -55 to +150 °C PD @TC = 25°C TJ TSTG -
OCR Scan
TP2037
Abstract: V VGS Gate-to-Source Voltage ± 30 V EAS Single Pulse Avalanche Energy @ L=22.5mH 281 mJ IAS Avalanche Current @ L=22.5mH 5 A -55 to + 150 °C PD @TC = 25 -
OCR Scan
TPV387

MRF175

Abstract: VGS Gate-to-Source Voltage ± 30 V EAS Single Pulse Avalanche Energy @ L=22.5mH 281 mJ IAS Avalanche Current @ L=22.5mH 5 A -55 to +150 °C PD @TC = 25°C TJ
-
OCR Scan
MRF175 MRF175LV MRF175LU MRF175L
Abstract: Gate-to-Source Voltage ± 30 V EAS Single Pulse Avalanche Energy @ L=22.5mH 281 mJ IAS Avalanche Current @ L=22.5mH 5 A -55 to +150 °C PD @TC = 25°C TJ TSTG -
OCR Scan
TP2031
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