NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
| Part | Manufacturer | Description | Type | Ordering |
| 221E | Hittite Microwave Corp. | GaAs MMIC SOT26 SPDT SWITCH, DC - 3 GHz |
6 pages, |
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| 221E | N/A | Semiconductor Devices, Diode, and SCR Datasheet Catalog |
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| Catalog Datasheet Results | Type | Document Tags |
| Abstract: HMC221 HMC221 / 221E v02.0700 GaAs MMIC SOT26 SPDT SWITCH, DC - 3 GHz Designer's Kit Available , 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC221 HMC221 / 221E , www.hittite.com 8 - 37 HMC221 HMC221 / 221E v02.0700 GaAs MMIC SOT26 SPDT SWITCH, DC - 3 GHz Compression vs. , Fax: 978-250-3373 Order On-line at www.hittite.com HMC221 HMC221 / 221E v02.0700 GaAs MMIC SOT26 , MSL1 Package Marking [1] H221 [2] 221E [1] Max peak reflow temperature of 235 °C [2 ... | Original |
6 pages, |
HMC221 HMC197 H221 221E HMC221E HMC221 abstract |
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| Abstract: HMC221 HMC221 / 221E v02.0700 GaAs MMIC SOT26 SPDT SWITCH, DC - 3 GHz Typical Applications , : 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC221 HMC221 / 221E v02.0700 GaAs MMIC SOT26 , www.hittite.com 10 - 43 HMC221 HMC221 / 221E v02.0700 GaAs MMIC SOT26 SPDT SWITCH, DC - 3 GHz Compression , 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC221 HMC221 / 221E , Stress Injection Molded Plastic 100% matte Sn MSL1 Package Marking [1] H221 [2] 221E ... | Original |
6 pages, |
HMC197 H221 221E SOT26 HMC221 HMC221E HMC221 abstract |
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| Abstract: MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS TO�0 FULLPAK CASE 221E� ISSUE O DATE 11/23/1990 SCALE 1:1 SEATING PLANE '-� '� F NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. C S Q U A 1 2 3 H '� K G N L J R M B M INCHES MIN MAX 0.621 0.629 0.394 0.402 0.181 0.189 0.026 0.034 0.121 , � Rev. 01O 1 Case Outline Number: 221E ... | Original |
1 pages, |
221E datasheet abstract |
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| Abstract: /< Silicon NPN epitaxial planer transistor For digital , /2212/2213/2214/2215/2216/2217/2218/2219/2210/ Transistors with built-in Resistor 221D/221E/221F/221K , current VCE = 50V, IB = 0 0.5 礎 UN2211 UN2211 0.5 UN2212/2214/221E/221D/221M/221N/221T 0.2 , , IB = 0 50 V UN2211 UN2211 Forward current transfer ratio 35 UN2212/221E 60 UN2213 UN2213 , 22 UN2213/221D/221E/2210 47 UN2216/221F/221L/221N/221Z UN2216/221F/221L/221N/221Z R1 (�%) 4.7 UN2218 UN2218 ... | Original |
17 pages, |
UN221D UN2210 UN2212 UN2214 UN2215 UN2217 UN2218 UN2219 221E UN2216 UN2213 un2211 221Z transistors c 2216 datasheet abstract |
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| Abstract: /< ( / ) Silicon NPN epitaxial planer transistor Unit: mm , /2218/2219/2210/ Transistors with built-in Resistor , 0.5 礎 UNR2211 UNR2211 0.5 UNR2212/2214/221E/221D/221M/221N/221T 0.2 UNR2213 UNR2213 Emitter cutoff , UNR2211 UNR2211 Forward current transfer ratio 35 UNR2212/221E 60 UNR2213/2214/221M UNR2213/2214/221M 80 ... | Original |
18 pages, |
UNR221D UNR2211 UNR2212 UNR2213 UNR2214 UNR2215 UNR2216 UNR2217 UNR2218 UNR2219 UNR2210 datasheet abstract |
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| Abstract: /< ( / ) Silicon NPN epitaxial planer transistor Unit: mm , /2212/2213/2214/2215/2216/2217/2218/2219/2210/ Transistors with built-in Resistor 221D/221E/221F/221K , current VCE = 50V, IB = 0 0.5 礎 UNR2211 UNR2211 0.5 UNR2212/2214/221E/221D/221M/221N/221T 0.2 , IC = 2mA, IB = 0 50 V UNR2211 UNR2211 Forward current transfer ratio 35 UNR2212/221E ... | Original |
18 pages, |
UNR221D UNR2210 UNR2211 UNR2212 UNR2213 UNR2214 UNR2215 UNR2216 UNR2217 UNR2218 UNR2219 221L 221D datasheet abstract |
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| Abstract: DURABILITY 100 MATING CYCLES ENVIRONMENTAL TEMPERATURE RATING - 40°C( -40°E) TO +1 05°C(221°E) PRODUCT ... | OCR Scan |
1 pages, |
datasheet abstract |
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| Abstract: DPERATING TEMP 105°C [221°E] 8 VDLTAGE RATING IS 300 V MAX 9 1,04-I,65mn2 [2,050-3,260] CMA, STRANDED THIS ... | OCR Scan |
1 pages, |
datasheet abstract |
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| Abstract: DPERATING TEMP 105°C [221°E] 8 VDLTAGE RATING IS 300 V MAX 9 l,65-2,62nm2 [3,260-5,180] CMA, STRANDED THIS ... | OCR Scan |
1 pages, |
datasheet abstract |
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| Abstract: - 42 - OP-221 OP-221 2HIÏ&, n-AV-, tjlTV V - 7'yfy/, «ÌI ANALOG DEVICES ML' •nmmEmm-.ii-m •EÏSFb'Iov y f- y muffii •« % W # tt • a OP-221E 0P-221B 0P-221B OP-221G OP-221G m e Vs-±15V Ta=25°C lïtE Àit' USARSI m ft s « lì s»* ±18 ± Vs ±30 -25--+85 / ±18 ±Vs ±30 -55-+125 / ±18 ±Vs ±30 -40-+85 / V V V •c mW •fe * y H • y - ^ mus, m « ta ^ iSfeft Sii (i tt ® (Ê Sif ffi * « £ ® a * e / / AMTirtVtë VoiDigKFW VoO>BS83gtt Vos TC/Vos Vos/time Ib I os 0.075 0.75 / 50 0.5 0.15 1.5 / 80 3 0.15 1.2 ... | OCR Scan |
1 pages, |
OP-221 OP-221E 0P-221B OP-221G OP-221 abstract |
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| Abstract: Bestückungsplan - contact layout 22 1 e d c b a = bestückt - assemble 22 1 e d 2 c b EE - Zone für a 8 durchkontaktierte 4x2= 2 21 x 2 = Löcher ø 0.6 42 thru hole ø 0.6 ±0.05 3 -0.4 44 max 1 max 2 3 10.8 20.65 1.7 1 max ±0.05 Compliant zone for 11.4 13.85 Lochbild für Leiterplatte Board hole pattern (Bestückungsseite) (Component mounting side) 21 x 2 = (42 ) 0.1 alle Löcher ... | Original |
1 pages, |
401194 104933 datasheet abstract |
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| Abstract: Bestückungsplan - contact layout 22 1 e d c b a = bestückt - assemble 22 1 e d 2 c b 8 a 4x2= 2 21 x 2 = 43.9 42 ±0.1 2,15 2 1 max 0,05 Pin in Paste 10,8 -0,2 20.65 -0.2 1,7 pin in paste 11,4 Lochbild für Leiterplatte Board hole pattern (Bestückungsseite) (Component mounting side) 21 x 2 = ( 42 ) 0.1 alle Löcher 2 1) all holes 1) ø 0,6 ±0,05 Durchmesser des metallisiert ... | Original |
1 pages, |
pin in paste ERMB22 datasheet abstract |
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| Abstract: Bestückungsplan - contact layout 22 1 e d c b a = bestückt - assemble 22 1 e d 2 c b EE-Zone für a 8 durchkontaktierte 4x2= 2 21 x 2 = Löcher ø 0.6 42 thru hole ø 0.6 43.9 ±0.05 Compliant zone for ±0.1 ±0.05 3 -0.4 2 10.8 -0.2 20.65 -0.2 1.7 ±0.05 1 max 11.4 Lochbild für Leiterplatte Board hole pattern (Bestückungsseite) (Component mounting side) 21 x 2 = ( 42 ) 0.1 alle Löcher ... | Original |
1 pages, |
ERMB22 914797 datasheet abstract |
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| Abstract: 4 D C B THIS DRAWING IS UNPUBLISHED. M RELEASED FOR PUBLIC/1 TI ON 19 COPYRIGHT 13 flV AMP INCORPORATED. ALL RIGHTS RESERVED. LOC 6 DIST 14 REVISIONS LTR DESCRIPTION REV / 0720-0977-96 DATE 13JUN96 13JUN96 DWN ME APVD BB BODY 2.84 ±0, L 1 12 + .0051 (FOR #4 STUDJ 5. 1 6 [. 2031 WIRE RANGE (^L^) E13288 E13288 Certified 22-1 E AUG SOLID OR STRANDED 22-1 E AWG SOLID OR STRANDED 22-1 G AWG SOLID OR STRANDED STAMP 45AMP 45AMP 22-18* APPROX AS SHOWN 22-16 TERMINALS ARE STAMPED 22-18 IN ACCORDANCE WITH MILITARY SPEC MIL-T- ... | OCR Scan |
1 pages, |
MIL-T-7928 E13288 C509 52947-1 datasheet abstract |
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| Abstract: 4 D C B THIS DRAWING IS UNPUBLISHED. M RELEASED FOR PUBLIC/1 TI ON 19 COPYRIGHT 13 flV AMP INCORPORATED. ALL RIGHTS RESERVED. LOC 6 BODY 3. 56 ±0. 13- L 140 +.005 J (FOR #6 STUDJ SERRATION 5. 94 [. 234J r. 81 1 J MAX DIST 14 REVISIONS LTR DESCRIPTION REV / 0720-0977-96 DATE 13JUN96 13JUN96 DWN ME APVD BB WIRE RANGE (^L^) E13288 E13288 Certified 22-1 E AUG SOLID OR STRANDED 22-1 E ¿WG SOLID OR STRANDED 22-1 G AWG SOLID OR STRANDED STAMP 65AMP 65AMP 22-18* APPROX AS SHOWN 22-16 TERMINALS ARE STAMPED 22-18 IN ACCORDANC ... | OCR Scan |
1 pages, |
MIL-T-7928 E13288 C509 65AMP 234J E1A4A datasheet abstract |
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| Abstract: J2/J5 Type B Right Angle Female for Daughter Cards Series 8071 · · · · · · 110 signal contacts in 5 rows of 22 positions Designed for gas tight press-fit installation Supplied with or without upper ground return shield Daughter card applications Fills positions J2 and J5 of the CompactPCI specification This connector should be used in conjunction with a Type A style to ensure proper mating alignment 27 8071 110 000 833 = Type B 110 Pin Right Angle Female without upper shield ... | Original |
1 pages, |
18 PIN ELCO Connector elco connector 20 ELCO connector datasheet abstract |
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| Abstract: VI-602-DP VI-602-DP, VI-602-2 VI-602-2 5 67 1 50 Pitch 2.54 x 24 = 60.96 26 QÌ rmTTrTTTTTiniiiiiiiiii - D O O-O OI u.u;u.u:u.u nTTTnTTTTTTTTITi 111111 j 25 62.8 69.8 DRIVER: OKI MSM58292 MSM58292, HD61603 HD61603 DIGIT HEIGHT 12.7 mm (0.5") -DP Pin No Segment Pin No Segment Pin No Segment Pin No Segment Pin No Sog ment 1 COM 11 4D 21 2DP 31 2F 41 4G 2 6E 12 4C 22 1 E 32 2G 42 L2 3 6D 13 4DP 23 1D 33 L1 43 5B 4 6C 14 3E 24 1C 34 3B 44 5A 5 6DP 15 3D 25 1B 35 3A 45 5F 6 5E 16 3C 26 1A 36 3F 46 5G 7 50 17 3DP 2 ... | OCR Scan |
1 pages, |
MSM58292 HD61603 VI-602-DP VI-602-2 VI-602-DP abstract |
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| Abstract | Saved from | Date Saved | File Size | Type | Download |
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| * OP-221E SPICE Macro-model 9/91, Rev. A * JCB / PMI * * This version of the OP-221 OP-221 OP-221 OP-221 model simulates the worst case * parameters of the 'E' grade. The worst case parameters * used correspond to those in the data sheet. * * Copyright 1991 by Analog * | | | negative supply * | | | | output * | | | | | .SUBCKT OP-221E 1 2 99 50 QX PNP(BF=63.7) .MODEL DX D(IS=1E-15 1E-15 1E-15 1E-15) .MODEL DY D(IS=1E-15 1E-15 1E-15 1E-15 BV=50) .ENDS OP-221E www.datasheetarchive.com/files/spicemodels/misc/modelos/sp/op221e.cir |
Spice Models | 18/04/2010 | 3.48 Kb | CIR | op221e.cir |
| Models PHB/PHD/PHP23NQ10T/1 PHB/PHD/PHP23NQ10T/1 PHB/PHD/PHP23NQ10T/1 PHB/PHD/PHP23NQ10T/1 model(s) PHB23NQ10T PHB23NQ10T PHB23NQ10T PHB23NQ10T PHD23NQ10T PHD23NQ10T PHD23NQ10T PHD23NQ10T PHP23NQ10T PHP23NQ10T PHP23NQ10T PHP23NQ10T PHB23NQ10T PHB23NQ10T PHB23NQ10T PHB23NQ10T Simulation values .SUBCKT PHB23NQ10T PHB23NQ10T PHB23NQ10T PHB23NQ10T 1 2 3 * 1=drain 2=gate 3=source L1 1 11 3.5e-9 L2 2 22 7.5e-9 L3 3 33 7.5e-9 Cgs 6 33 718E-12 718E-12 718E-12 718E-12 Cgd1 6 4 1203E-12 1203E-12 1203E-12 1203E-12 Cgd2 11 4 83E-12 83E-12 83E-12 83E-12 M1 5 6 33 33 MOST1 M2 4 6 5 33 MOST2 D1 33 12 Dbody Rdiode 12 11 Rtemp 1e-6 Rdrain 5 11 Rtemp 27 www.datasheetarchive.com/files/philips/models/phb_phd_php23nq10t_1.html |
Philips | 23/04/2003 | 5.11 Kb | HTML | phb_phd_php23nq10t_1.html |
| Models PHB23NQ10T PHB23NQ10T PHB23NQ10T PHB23NQ10T PHD23NQ10T PHD23NQ10T PHD23NQ10T PHD23NQ10T PHP23NQ10T PHP23NQ10T PHP23NQ10T PHP23NQ10T PHB23NQ10T PHB23NQ10T PHB23NQ10T PHB23NQ10T .SUBCKT PHB23NQ10T PHB23NQ10T PHB23NQ10T PHB23NQ10T 1 2 3 * 1=drain 2=gate 3=source L1 1 11 3.5e-9 L2 2 22 7.5e-9 L3 3 33 7.5e-9 Cgs 6 33 718E-12 718E-12 718E-12 718E-12 Cgd1 6 4 1203E-12 1203E-12 1203E-12 1203E-12 Cgd2 11 4 83E-12 83E-12 83E-12 83E-12 M1 5 6 33 33 MOST1 M www.datasheetarchive.com/files/philips/models/phb_phd_php23nq10t_1-v1.html |
Philips | 31/12/2001 | 9.52 Kb | HTML | phb_phd_php23nq10t_1-v1.html |
| Models PHK4NQ10T/1 PHK4NQ10T/1 PHK4NQ10T/1 PHK4NQ10T/1 model(s) PHK4NQ10T PHK4NQ10T PHK4NQ10T PHK4NQ10T PHK4NQ10T PHK4NQ10T PHK4NQ10T PHK4NQ10T Simulation values .SUBCKT PHK4NQ10T PHK4NQ10T PHK4NQ10T PHK4NQ10T 1 2 3 * 1=drain 2=gate 3=source L1 1 11 1e-9 L2 2 22 3e-9 L3 3 33 3e-9 Cgs 6 33 718E-12 718E-12 718E-12 718E-12 Cgd1 6 4 1203E-12 1203E-12 1203E-12 1203E-12 Cgd2 11 4 83E-12 83E-12 83E-12 83E-12 M1 5 6 33 33 MOST1 M2 4 6 5 33 MOST2 D1 33 12 Dbody Rdiode 12 11 Rtemp 1e-6 Rdrain 5 11 Rtemp 44e-3 Rgate 22 6 13 .MODEL MOST1 NMOS (LEVEL=3 W=0.1 L=0.3e-6 Vto=3.67 K www.datasheetarchive.com/files/philips/models/phk4nq10t_1.html |
Philips | 23/04/2003 | 2.35 Kb | HTML | phk4nq10t_1.html |
| Models PHB/PHD/PHP23NQ10T/1 PHB/PHD/PHP23NQ10T/1 PHB/PHD/PHP23NQ10T/1 PHB/PHD/PHP23NQ10T/1 model(s) PHD23NQ10T PHD23NQ10T PHD23NQ10T PHD23NQ10T PHD23NQ10T PHD23NQ10T PHD23NQ10T PHD23NQ10T Simulation values .SUBCKT PHD23NQ10T PHD23NQ10T PHD23NQ10T PHD23NQ10T 1 2 3 * 1=drain 2=gate 3=source L1 1 11 3.5e-9 L2 2 22 7.5e-9 L3 3 33 7.5e-9 Cgs 6 33 718E-12 718E-12 718E-12 718E-12 Cgd1 6 4 1203E-12 1203E-12 1203E-12 1203E-12 Cgd2 11 4 83E-12 83E-12 83E-12 83E-12 M1 5 6 33 33 MOST1 M2 4 6 5 33 MOST2 D1 33 12 Dbody Rdiode 12 11 Rtemp 1e-6 Rdrain 5 11 Rtemp 27e-3 Rgate 22 6 5 .MODEL MOST1 NMOS (LEVEL=3 W=0.1 www.datasheetarchive.com/files/philips/models/phb_phd_php23nq10t_1-v2.html |
Philips | 12/05/2005 | 2.42 Kb | HTML | phb_phd_php23nq10t_1-v2.html |
| Models PHK4NQ10T/1 PHK4NQ10T/1 PHK4NQ10T/1 PHK4NQ10T/1 model(s) PHK4NQ10T PHK4NQ10T PHK4NQ10T PHK4NQ10T PHK4NQ10T PHK4NQ10T PHK4NQ10T PHK4NQ10T Simulation values .SUBCKT PHK4NQ10T PHK4NQ10T PHK4NQ10T PHK4NQ10T 1 2 3 * 1=drain 2=gate 3=source L1 1 11 1e-9 L2 2 22 3e-9 L3 3 33 3e-9 Cgs 6 33 718E-12 718E-12 718E-12 718E-12 Cgd1 6 4 1203E-12 1203E-12 1203E-12 1203E-12 Cgd2 11 4 83E-12 83E-12 83E-12 83E-12 M1 5 6 33 33 MOST1 M2 4 6 5 33 MOST2 D1 33 12 Dbody Rdiode 12 11 Rtemp 1e-6 Rdrain 5 11 Rtemp 44e-3 Rgate 22 6 13 .MODEL MOST1 NMOS (LEVEL=3 W=0.1 L=0.3e-6 Vto=3.6 www.datasheetarchive.com/files/philips/models/phk4nq10t_1-v1.html |
Philips | 12/05/2005 | 2.39 Kb | HTML | phk4nq10t_1-v1.html |
| .SUBCKT PHD23NQ10T PHD23NQ10T PHD23NQ10T PHD23NQ10T 1 2 3 * 1=drain 2=gate 3=source L1 1 11 3.5e-9 L2 2 22 7.5e-9 L3 3 33 7.5e-9 Cgs 6 33 718E-12 718E-12 718E-12 718E-12 Cgd1 6 4 1203E-12 1203E-12 1203E-12 1203E-12 Cgd2 11 4 83E-12 83E-12 83E-12 83E-12 M1 5 6 33 33 MOST1 M2 4 6 5 33 MOST2 D1 33 12 Dbody Rdiode 12 11 Rtemp 1e-6 Rdrain 5 11 Rtemp 27e-3 Rgate 22 6 5 .MODEL MOST1 NMOS (LEVEL=3 W=0.1 L=0.3e-6 Vto=3.67 Kp=2.21e-5 + RS=0 RD=0 UO=650 VMAX=0 XJ=0.5E-6 KAPPA=10E-2 10E-2 10E-2 10E-2 + ETA=1e-4 TPG=1 IS=0 LD=0 WD=0 CGSO=0 CGDO=0 + www.datasheetarchive.com/files/spicemodels/misc/models/philips_powermos/d23nq10t.prm |
Spice Models | 13/08/2003 | 0.97 Kb | PRM | d23nq10t.prm |
| .SUBCKT PHK4NQ10T PHK4NQ10T PHK4NQ10T PHK4NQ10T 1 2 3 * 1=drain 2=gate 3=source L1 1 11 1e-9 L2 2 22 3e-9 L3 3 33 3e-9 Cgs 6 33 718E-12 718E-12 718E-12 718E-12 Cgd1 6 4 1203E-12 1203E-12 1203E-12 1203E-12 Cgd2 11 4 83E-12 83E-12 83E-12 83E-12 M1 5 6 33 33 MOST1 M2 4 6 5 33 MOST2 D1 33 12 Dbody Rdiode 12 11 Rtemp 1e-6 Rdrain 5 11 Rtemp 44e-3 Rgate 22 6 13 .MODEL MOST1 NMOS (LEVEL=3 W=0.1 L=0.3e-6 Vto=3.67 Kp=2.21e-5 + RS=0 RD=0 UO=650 VMAX=0 XJ=0.5E-6 KAPPA=10E-2 10E-2 10E-2 10E-2 + ETA=1e-4 TPG=1 IS=0 LD=0 WD=0 CGSO=0 CGDO=0 + www.datasheetarchive.com/files/spicemodels/misc/models/philips_powermos/hk4nq10t.prm |
Spice Models | 13/08/2003 | 0.96 Kb | PRM | hk4nq10t.prm |
| .SUBCKT PHB23NQ10T PHB23NQ10T PHB23NQ10T PHB23NQ10T 1 2 3 * 1=drain 2=gate 3=source L1 1 11 3.5e-9 L2 2 22 7.5e-9 L3 3 33 7.5e-9 Cgs 6 33 718E-12 718E-12 718E-12 718E-12 Cgd1 6 4 1203E-12 1203E-12 1203E-12 1203E-12 Cgd2 11 4 83E-12 83E-12 83E-12 83E-12 M1 5 6 33 33 MOST1 M2 4 6 5 33 MOST2 D1 33 12 Dbody Rdiode 12 11 Rtemp 1e-6 Rdrain 5 11 Rtemp 27e-3 Rgate 22 6 5 .MODEL MOST1 NMOS (LEVEL=3 W=0.1 L=0.3e-6 Vto=3.67 Kp=2.21e-5 + RS=0 RD=0 UO=650 VMAX=0 XJ=0.5E-6 KAPPA=10E-2 10E-2 10E-2 10E-2 + ETA=1e-4 TPG=1 IS=0 LD=0 WD=0 CGSO=0 CGDO=0 + www.datasheetarchive.com/files/spicemodels/misc/models/philips_powermos/b23nq10t.prm |
Spice Models | 13/08/2003 | 0.97 Kb | PRM | b23nq10t.prm |
| .SUBCKT PHP23NQ10T PHP23NQ10T PHP23NQ10T PHP23NQ10T 1 2 3 * 1=drain 2=gate 3=source L1 1 11 4.5e-9 L2 2 22 7.5e-9 L3 3 33 7.5e-9 Cgs 6 33 718E-12 718E-12 718E-12 718E-12 Cgd1 6 4 1203E-12 1203E-12 1203E-12 1203E-12 Cgd2 11 4 83E-12 83E-12 83E-12 83E-12 M1 5 6 33 33 MOST1 M2 4 6 5 33 MOST2 D1 33 12 Dbody Rdiode 12 11 Rtemp 1e-6 Rdrain 5 11 Rtemp 27e-3 Rgate 22 6 5 .MODEL MOST1 NMOS (LEVEL=3 W=0.1 L=0.3e-6 Vto=3.67 Kp=2.21e-5 + RS=0 RD=0 UO=650 VMAX=0 XJ=0.5E-6 KAPPA=10E-2 10E-2 10E-2 10E-2 + ETA=1e-4 TPG=1 IS=0 LD=0 WD=0 CGSO=0 CGDO=0 + www.datasheetarchive.com/files/spicemodels/misc/models/philips_powermos/p23nq10t.prm |
Spice Models | 13/08/2003 | 0.97 Kb | PRM | p23nq10t.prm |
| Part | Manufacturer | Description | Shortform Datasheet | Ordering |
| 221E | Powerex Power Semiconductors | Silicon Controlled Rectifier | |